Qubits made by advanced semiconductor manufacturing
Authors:
A. M. J. Zwerver,
T. Krähenmann,
T. F. Watson,
L. Lampert,
H. C. George,
R. Pillarisetty,
S. A. Bojarski,
P. Amin,
S. V. Amitonov,
J. M. Boter,
R. Caudillo,
D. Corras-Serrano,
J. P. Dehollain,
G. Droulers,
E. M. Henry,
R. Kotlyar,
M. Lodari,
F. Luthi,
D. J. Michalak,
B. K. Mueller,
S. Neyens,
J. Roberts,
N. Samkharadze,
G. Zheng,
O. K. Zietz
, et al. (4 additional authors not shown)
Abstract:
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabr…
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Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However, to date, their fabrication has relied on electron-beam lithography and, with few exceptions, on academic style lift-off processes. Although these fabrication techniques offer process flexibility, they suffer from low yield and poor uniformity. An important question is whether the processing conditions developed in the manufacturing fab environment to enable high yield, throughput, and uniformity of transistors are suitable for quantum dot arrays and do not compromise the delicate qubit properties. Here, we demonstrate quantum dots hosted at a 28Si/28SiO2 interface, fabricated in a 300 mm semiconductor manufacturing facility using all-optical lithography and fully industrial processing. As a result, we achieve nanoscale gate patterns with remarkable homogeneity. The quantum dots are well-behaved in the multi-electron regime, with excellent tunnel barrier control, a crucial feature for fault-tolerant two-qubit gates. Single-spin qubit operation using magnetic resonance reveals relaxation times of over 1 s at 1 Tesla and coherence times of over 3 ms, matching the quality of silicon spin qubits reported to date. The feasibility of high-quality qubits made with fully-industrial techniques strongly enhances the prospects of a large-scale quantum computer
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Submitted 29 January, 2021;
originally announced January 2021.
Enhancing a Near-Term Quantum Accelerator's Instruction Set Architecture for Materials Science Applications
Authors:
Xiang Zou,
Shavindra P. Premaratne,
M. Adriaan Rol,
Sonika Johri,
Viacheslav Ostroukh,
David J. Michalak,
Roman Caudillo,
James S. Clarke,
Leonardo Dicarlo,
A. Y. Matsuura
Abstract:
Quantum computers with tens to hundreds of noisy qubits are being developed today. To be useful for real-world applications, we believe that these near-term systems cannot simply be scaled-down non-error-corrected versions of future fault-tolerant large-scale quantum computers. These near-term systems require specific architecture and design attributes to realize their full potential. To efficient…
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Quantum computers with tens to hundreds of noisy qubits are being developed today. To be useful for real-world applications, we believe that these near-term systems cannot simply be scaled-down non-error-corrected versions of future fault-tolerant large-scale quantum computers. These near-term systems require specific architecture and design attributes to realize their full potential. To efficiently execute an algorithm, the quantum coprocessor must be designed to scale with respect to qubit number and to maximize useful computation within the qubits' decoherence bounds. In this work, we employ an application-system-qubit co-design methodology to architect a near-term quantum coprocessor. To support algorithms from the real-world application area of simulating the quantum dynamics of a material system, we design a (parameterized) arbitrary single-qubit rotation instruction and a two-qubit entangling controlled-Z instruction. We introduce dynamic gate set and paging mechanisms to implement the instructions. To evaluate the functionality and performance of these two instructions, we implement a two-qubit version of an algorithm to study a disorder-induced metal-insulator transition and run 60 random instances of it, each of which realizes one disorder configuration and contains 40 two-qubit instructions (or gates) and 104 single-qubit instructions. We observe the expected quantum dynamics of the time-evolution of this system.
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Submitted 6 March, 2020;
originally announced March 2020.
The role of doping and dimensionality in the superconductivity of NaxCoO2
Authors:
M. Banobre-Lopez,
F. Rivadulla,
R. Caudillo,
M. A. Lopez-Quintela,
J. Rivas,
J. B. Goodenough
Abstract:
We report a complete analysis of the formal oxidation state of Co in NaxCoO2, in the interval 0.31<x<0.67. Iodometric titration and thermoelectric power confirm that a direct relationship between the Na content and the amount of Co 3 + cannot be established in this system. Creation of a significant amount of oxygen vacancies accompanies Na-ion deintercalation, keeping the formal Co valence at 3.…
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We report a complete analysis of the formal oxidation state of Co in NaxCoO2, in the interval 0.31<x<0.67. Iodometric titration and thermoelectric power confirm that a direct relationship between the Na content and the amount of Co 3 + cannot be established in this system. Creation of a significant amount of oxygen vacancies accompanies Na-ion deintercalation, keeping the formal Co valence at 3.45 + for x<0.45. To the light of new thermoelectric power data which reveals important differences between the hydrated (superconducting) and non-hydrated (non-superconducting) samples, we propose here that water plays an important chemical role beyond that of a spacer between the CoO2 layers.
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Submitted 23 September, 2004;
originally announced September 2004.
