-
Tunable Photodetectors via in situ Thermal Conversion of TiS$_3$ to TiO$_2$
Authors:
Foad Ghasemi,
Riccardo Frisenda,
Eduardo Flores,
Nikos Papadopoulos,
Robert Biele,
David Perez de Lara,
Herre S. J. van der Zant,
Kenji Watanabe,
Takashi Taniguchi,
Roberto D'Agosta,
Jose R. Ares,
Carlos Sánchez,
Isabel J. Ferrer,
Andres Castellanos-Gomez
Abstract:
In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semi…
▽ More
In two-dimensional materials research, oxidation is usually considered as a common source for the degradation of electronic and optoelectronic devices or even device failure. However, in some cases a controlled oxidation can open the possibility to widely tune the band structure of 2D materials. In particular, we demonstrate the controlled oxidation of titanium trisulfide (TiS$_3$), a layered semiconductor that has attracted much attention recently thanks to its quasi-1D electronic and optoelectronic properties and its direct bandgap of 1.1 eV. Heating TiS$_3$ in air above 300 °C gradually converts it into TiO$_2$, a semiconductor with a wide bandgap of 3.2 eV with ap-plications in photo-electrochemistry and catalysis. In this work, we investigate the controlled thermal oxidation of individual TiS$_3$ nanoribbons and its influence on the optoelectronic properties of TiS$_3$-based photodetectors. We observe a step-wise change in the cut-off wavelength from its pristine value ~1000 nm to 450 nm after subjecting the TiS$_3$ devices to subsequent thermal treatment cycles. Ab-initio and many-body calculations confirm an increase in the bandgap of titanium oxysulfide (TiO$_{2-x}$S$_x$) when increasing the amount of oxygen and reducing the amount of sulfur.
△ Less
Submitted 11 June, 2020;
originally announced June 2020.
-
Polarization-sensitive and broadband photodetection based on a mixed-dimensionality TiS3/Si p-n junction
Authors:
Yue Niu,
Riccardo Frisenda,
Eduardo Flores,
Jose R. Ares,
Weicheng Jiao,
David Perez de Lara,
Carlos Sanchez,
Rongguo Wang,
Isabel J. Ferrer,
Andres Castellanos-Gomez
Abstract:
The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic two-dimensional materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here we demonstrate the fabrication of a monolithic polarization sensitive broadband photodetector base…
▽ More
The capability to detect the polarization state of light is crucial in many day-life applications and scientific disciplines. Novel anisotropic two-dimensional materials such as TiS3 combine polarization sensitivity, given by the in-plane optical anisotropy, with excellent electrical properties. Here we demonstrate the fabrication of a monolithic polarization sensitive broadband photodetector based on a mixed-dimensionality TiS3/Si p-n junction. The fabricated devices show broadband responsivity up to 1050 nm, a strong sensitivity to linearly polarized illumination with difference between the two orthogonal polarization states up to 350 % and a good detectivity and fast response time. The discussed devices can be used as building blocks to fabricate more complex polarization sensitive systems such as polarimeters.
△ Less
Submitted 22 September, 2020; v1 submitted 27 March, 2019;
originally announced March 2019.
-
A strain tunable single-layer MoS2 photodetector
Authors:
Patricia Gant,
Peng Huang,
David Pérez de Lara,
Dan Guo,
Riccardo Frisenda,
Andres Castellanos-Gomez
Abstract:
Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the intrinsic properties of 2D materials, the application of strain can be also used to modify the characteristics of devices based on them. In this work, w…
▽ More
Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the intrinsic properties of 2D materials, the application of strain can be also used to modify the characteristics of devices based on them. In this work, we study flexible and transparent photodetectors based on single-layer MoS2 under the application of biaxial strain. We find that by controlling the level of strain, we can tune the photoresponsivity (by 2-3 orders of magnitude), the response time (from <80 ms to 1.5 s) and the spectral bandwidth (with a gauge factor of 135 meV/% or 58 nm/%) of the device.
△ Less
Submitted 17 July, 2019; v1 submitted 7 February, 2019;
originally announced February 2019.
-
Towards Air Stability of Ultra-Thin GaSe Devices: Avoiding Environmental and Laser-Induced Degradation by Encapsulation
Authors:
Qinghua Zhao,
Riccardo Frisenda,
Patricia Gant,
David Perez de Lara,
Carmen Munuera,
Mar Garcia-Hernandez,
Yue Niu,
Tao Wang,
Wanqi Jie,
Andres Castellanos-Gomez
Abstract:
Gallium selenide (GaSe) is a novel two-dimensional material, which belongs to the layered III-VIA semiconductors family and attracted interest recently as it displays single-photon emitters at room temperature and strong optical non-linearity. Nonetheless, few-layer GaSe is not stable under ambient conditions and it tends to degrade over time. Here we combine atomic force microscopy, Raman spectro…
▽ More
Gallium selenide (GaSe) is a novel two-dimensional material, which belongs to the layered III-VIA semiconductors family and attracted interest recently as it displays single-photon emitters at room temperature and strong optical non-linearity. Nonetheless, few-layer GaSe is not stable under ambient conditions and it tends to degrade over time. Here we combine atomic force microscopy, Raman spectroscopy and optoelectronic measurements in photodetectors based on thin GaSe to study its long-term stability. We found that the GaSe flakes exposed to air tend to decompose forming firstly amorphous selenium and Ga2Se3 and subsequently Ga2O3. While the first stage is accompanied by an increase in photocurrent, in the second stage we observe a decrease in photocurrent which leads to the final failure of GaSe photodetectors. Additionally, we found that the encapsulation of the GaSe photodetectors with hexagonal boron nitride (h-BN) can protect the GaSe from degradation and can help to achieve long-term stability of the devices.
△ Less
Submitted 15 October, 2018;
originally announced October 2018.
-
Optical contrast and refractive index of natural van der Waals heterostructure nanosheets of franckeite
Authors:
Patricia Gant,
Foad Ghasemi,
David Maeso,
Carmen Munuera,
Elena López-Elvira,
Riccardo Frisenda,
David Pérez De Lara,
Gabino Rubio-Bollinger,
Mar Garcia-Hernandez,
Andres Castellanos-Gomez
Abstract:
We study mechanically exfoliated nanosheets of franckeite by quantitative optical microscopy. The analysis of transmission mode and epi-illumination mode optical microscopy images provides a rapid method to estimate the thickness of the exfoliated flakes at first glance. A quantitative analysis of the optical contrast spectra by means of micro-reflectance allows one to determine the refractive ind…
▽ More
We study mechanically exfoliated nanosheets of franckeite by quantitative optical microscopy. The analysis of transmission mode and epi-illumination mode optical microscopy images provides a rapid method to estimate the thickness of the exfoliated flakes at first glance. A quantitative analysis of the optical contrast spectra by means of micro-reflectance allows one to determine the refractive index of franckeite in a broad range of the visible spectrum through a fit of the acquired spectra to a Fresnel law based model.
△ Less
Submitted 11 October, 2018;
originally announced October 2018.
-
Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2
Authors:
Yue Niu,
Sergio Gonzalez-Abad,
Riccardo Frisenda,
Philipp Marauhn,
Matthias Drüppel,
Patricia Gant,
Robert Schmidt,
Najme S. Taghavi,
David Barcons,
Aday J. Molina-Mendoza,
Steffen Michaelis de Vasconcellos,
Rudolf Bratschitsch,
David Perez De Lara,
Michael Rohlfing,
Andres Castellanos-Gomez
Abstract:
The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semicond…
▽ More
The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semiconducting transition metal dichalcogenides (TMDCs), MoS2, MoSe2, WS2, and WSe2, with thickness ranging from one layer up to six layers. We analyzed the thickness-dependent energy of the different excitonic features, indicating the change in the band structure of the different TMDC materials with the number of layers. Our work provided a route to employ differential reflectance spectroscopy for determining the number of layers of MoS2, MoSe2, WS2, and WSe2.
△ Less
Submitted 10 October, 2018;
originally announced October 2018.
-
Biaxial strain in atomically thin transition metal dichalcogenides
Authors:
Riccardo Frisenda,
Robert Schmidt,
Steffen Michaelis de Vasconcellos,
Rudolf Bratschitsch,
David Perez de Lara,
Andres Castellanos-Gomez
Abstract:
Strain engineering in single-layer semiconducting transition metal dichalcogenides aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we study transition metal dichalcogenides monolayers deposited on polymeric substrates under the application of biaxial strain, both tensile and compressive. We can control the amount…
▽ More
Strain engineering in single-layer semiconducting transition metal dichalcogenides aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we study transition metal dichalcogenides monolayers deposited on polymeric substrates under the application of biaxial strain, both tensile and compressive. We can control the amount of biaxial strain applied by letting the substrate thermally expand or compress by changing the substrate temperature. After modelling the substrate-dependent strain transfer process with a finite elements simulation, we performed micro-differential spectroscopy of four transition metal dichalcogenides monolayers (MoS2, MoSe2, WS2, WSe2) under the application of biaxial strain and measured their optical properties. For tensile strain we observe a redshift of the bandgap that reaches a value as large as 94 meV/% in the case of single-layer WS2 deposited on polypropylene. The observed bandgap shifts as a function of substrate extension/compression follow the order WS2 > WSe2 > MoS2 > MoSe2.
△ Less
Submitted 30 April, 2018;
originally announced April 2018.
-
Recent progress in the assembly of nanodevices and van der Waals heterostructures by deterministic placement of 2D materials
Authors:
Riccardo Frisenda,
Efrén Navarro-Moratalla,
Patricia Gant,
David Pérez De Lara,
Pablo Jarillo-Herrero,
Roman V. Gorbachev,
Andres Castellanos-Gomez
Abstract:
Designer heterostructures can now be assembled layer-by-layer with unmatched precision thanks to the recently developed deterministic placement methods to transfer two-dimensional (2D) materials. This possibility constitutes the birth of a very active research field on the so-called van der Waals heterostructures. Moreover, these deterministic placement methods also open the door to fabricate comp…
▽ More
Designer heterostructures can now be assembled layer-by-layer with unmatched precision thanks to the recently developed deterministic placement methods to transfer two-dimensional (2D) materials. This possibility constitutes the birth of a very active research field on the so-called van der Waals heterostructures. Moreover, these deterministic placement methods also open the door to fabricate complex devices, which would be otherwise very difficult to achieve by conventional bottom-up nanofabrication approaches, and to fabricate fully-encapsulated devices with exquisite electronic properties. The integration of 2D materials with existing technologies such as photonic and superconducting waveguides and fiber optics is another exciting possibility. Here, we review the state-of-the-art of the deterministic placement methods, describing and comparing the different alternative methods available in the literature and we illustrate their potential to fabricate van der Waals heterostructures, to integrate 2D materials into complex devices and to fabricate artificial bilayer structures where the layers present a user-defined rotational twisting angle.
△ Less
Submitted 15 November, 2017;
originally announced December 2017.
-
Characterization of highly crystalline lead iodide nanosheets prepared by room-temperature solution processing
Authors:
Riccardo Frisenda,
Joshua O. Island,
Jose L. Lado,
Emerson Giovanelli,
Patricia Gant,
Philipp Nagler,
Sebastian Bange,
John M. Lupton,
Christian Schüller,
Aday Molina-Mendoza,
Lucia Aballe,
Michael Foerster,
Tobias Korn,
Miguel Angel Niño,
David Perez de Lara,
Emilio M. Pérez,
Joaquín Fernandéz-Rossier,
Andres Castellanos-Gomez
Abstract:
Two-dimensional semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of two-dimensional materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum,…
▽ More
Two-dimensional semiconducting materials are particularly appealing for many applications. Although theory predicts a large number of two-dimensional materials, experimentally only a few of these materials have been identified and characterized comprehensively in the ultrathin limit. Lead iodide, which belongs to the transition metal halides family and has a direct bandgap in the visible spectrum, has been known for a long time and has been well characterized in its bulk form. Nevertheless, studies of this material in the nanometer thickness regime are rather scarce. In this article we demonstrate an easy way to synthesize ultrathin, highly crystalline flakes of PbI2 by precipitation from a solution in water. We thoroughly characterize the produced thin flakes with different techniques ranging from optical and Raman spectros-copy to temperature-dependent photoluminescence and electron microscopy. We compare the results to ab initio calculations of the band structure of the material. Finally, we fabricate photodetectors based on PbI2 and study their optoelectronic properties.
△ Less
Submitted 10 October, 2017;
originally announced October 2017.
-
Photodiodes based in La0.7Sr0.3MnO3/single layer MoS2 hybrid vertical heterostructures
Authors:
Yue Niu,
Riccardo Frisenda,
Simon A. Svatek,
Gloria Orfila,
Fernando Gallego,
Patricia Gant,
Nicolás Agraït,
Carlos León,
Alberto Rivera-Calzada,
David Perez De Lara,
Jacobo Santamaría,
Andres Castellanos-Gomez
Abstract:
The fabrication of artificial materials by stacking of individual two-dimensional (2D) materials is amongst one of the most promising research avenues in the field of 2D materials. Moreover, this strategy to fabricate new man-made materials can be further extended by fabricating hybrid stacks between 2D materials and other functional materials with different dimensionality making the potential num…
▽ More
The fabrication of artificial materials by stacking of individual two-dimensional (2D) materials is amongst one of the most promising research avenues in the field of 2D materials. Moreover, this strategy to fabricate new man-made materials can be further extended by fabricating hybrid stacks between 2D materials and other functional materials with different dimensionality making the potential number of combinations almost infinite. Among all these possible combinations, mixing 2D materials with transition metal oxides can result especially useful because of the large amount of interesting physical phenomena displayed separately by these two material families. We present a hybrid device based on the stacking of a single layer MoS2 onto a lanthanum strontium manganite (La0.7Sr0.3MnO3) thin film, creating an atomically thin device. It shows a rectifying electrical transport with a ratio of 103, and a photovoltaic effect with Voc up to 0.4 V. The photodiode behaviour arises as a consequence of the different doping character of these two materials. This result paves the way towards combining the efforts of these two large materials science communities.
△ Less
Submitted 19 June, 2017;
originally announced June 2017.
-
Dielectrophoretic assembly of liquid-phase-exfoliated TiS3 nanoribbons for photodetecting applications
Authors:
R. Frisenda,
E. Giovanelli,
P. Mishra,
P. Gant,
E. Flores,
C. Sánchez,
J. R. Ares,
D. Perez de Lara,
I. J. Ferrer,
E. M. Pérez,
A. Castellanos-Gomez
Abstract:
Liquid-phase-exfoliation is a technique capable of producing large quantities of two-dimensional material in suspension. Despite many efforts in the optimization of the exfoliation process itself not much has been done towards the integration of liquid-phase-exfoliated materials in working solid-state devices. In this article, we use dielectrophoresis to direct the assembly of liquid-phase-exfolia…
▽ More
Liquid-phase-exfoliation is a technique capable of producing large quantities of two-dimensional material in suspension. Despite many efforts in the optimization of the exfoliation process itself not much has been done towards the integration of liquid-phase-exfoliated materials in working solid-state devices. In this article, we use dielectrophoresis to direct the assembly of liquid-phase-exfoliated TiS3 nanoribbons between two gold electrodes to produce photodetectors working in the visible. Through electrical and optical measurements we characterize the responsivity of the device and we find values as large as 3.8 mA/W, which improve of more than one order of magnitude on the state-of-the-art for devices based on liquid-phase-exfoliated two-dimensional materials assembled by drop-casting or ink-jet methods.
△ Less
Submitted 12 June, 2017;
originally announced June 2017.
-
Lithography-free electrical transport measurements on 2D materials by direct microprobing
Authors:
Patricia Gant,
Yue Niu,
Simon A. Svatek,
Nicolás Agraït,
Carmen Munuera,
Mar García- Hernández,
Riccardo Frisenda,
David Perez de Lara,
Andres Castellanos-Gomez
Abstract:
We present a method to carry out electrical and opto-electronic measurements on 2D materials using carbon fiber microprobes to directly make electrical contacts to the 2D materials without damaging them. The working principle of this microprobing method is illustrated by measuring transport in MoS2 flakes in vertical (transport in the out-of-plane direction) and lateral (transport within the cryst…
▽ More
We present a method to carry out electrical and opto-electronic measurements on 2D materials using carbon fiber microprobes to directly make electrical contacts to the 2D materials without damaging them. The working principle of this microprobing method is illustrated by measuring transport in MoS2 flakes in vertical (transport in the out-of-plane direction) and lateral (transport within the crystal plane) configurations, finding performances comparable to those reported for MoS2 devices fabricated by conventional lithographic process. We also show that this method can be used with other 2D materials.
△ Less
Submitted 20 May, 2017;
originally announced May 2017.
-
A versatile scanning photocurrent mapping system to characterize optoelectronic devices based on 2D materials
Authors:
Christoph Reuter,
Riccardo Frisenda,
Der-Yuh Lin,
Tsung-Shine Ko,
David Perez de Lara,
Andres Castellanos-Gomez
Abstract:
The investigation of optoelectronic devices based on two-dimensional materials and their heterostructures is a very active area of investigation with both fundamental and applied aspects involved. We present a description of a home-built scanning photocurrent microscope that we have designed and developed to perform electronic transport and optical measurements of two-dimensional materials based d…
▽ More
The investigation of optoelectronic devices based on two-dimensional materials and their heterostructures is a very active area of investigation with both fundamental and applied aspects involved. We present a description of a home-built scanning photocurrent microscope that we have designed and developed to perform electronic transport and optical measurements of two-dimensional materials based devices. The complete system is rather inexpensive (<10000 EUR) and it can be easily replicated in any laboratory. To illustrate the setup we measure current-voltage characteristics, in dark and under global illumination, of an ultra-thin PN junction formed by the stacking of an n-doped few-layer MoS2 flake onto a p-type MoS2 flake. We then acquire scanning photocurrent maps and by mapping the short circuit current generated in the device under local illumination we find that at zero bias the photocurrent is generated mostly in the region of overlap between the n-type and p-type flakes.
△ Less
Submitted 4 May, 2017;
originally announced May 2017.
-
High Throughput Characterization of Epitaxially Grown Single-Layer MoS2
Authors:
Foad Ghasemi,
Riccardo Frisenda,
Dumitru Dumcenco,
Andras Kis,
David Perez de Lara,
Andres Castellanos-Gomez
Abstract:
The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate…
▽ More
The growth of single-layer MoS2 with chemical vapor deposition is an established method that can produce large-area and high quality samples. In this article, we investigate the geometrical and optical properties of hundreds of individual single-layer MoS2 crystallites grown on a highly-polished sapphire substrate. Most of the crystallites are oriented along the terraces of the sapphire substrate and have an area comprised between 10 μm2 and 60 μm2. Differential reflectance measurements performed on these crystallites show that the area of the MoS2 crystallites has an influence on the position and broadening of the B exciton while the orientation does not influence the A and B excitons of MoS2. These measurements demonstrate that differential reflectance measurements have the potential to be used to characterize the homogeneity of large area CVD grown samples.
△ Less
Submitted 6 April, 2017;
originally announced April 2017.
-
Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides
Authors:
Riccardo Frisenda,
Matthias Drüppel,
Robert Schmidt,
Steffen Michaelis de Vasconcellos,
David Perez de Lara,
Rudolf Bratschitsch,
Michael Rohlfing,
Andres Castellanos-Gomez
Abstract:
Since their discovery single-layer semiconducting transition metal dichalcogenides have attracted much attention thanks to their outstanding optical and mechanical properties. Strain engineering in these two-dimensional materials aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we demonstrate that biaxial strain, b…
▽ More
Since their discovery single-layer semiconducting transition metal dichalcogenides have attracted much attention thanks to their outstanding optical and mechanical properties. Strain engineering in these two-dimensional materials aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we demonstrate that biaxial strain, both tensile and compressive, can be applied and released in a timescale of a few seconds in a reproducible way on transition metal dichalcogenides monolayers deposited on polymeric substrates. We can control the amount of biaxial strain applied by letting the substrate expand or compress. To do this we change the substrate temperature and choose materials with a large thermal expansion coefficient. After the investigation of the substrate-dependent strain transfer, we performed micro-differential spectroscopy of four transition metal dichalcogenides monolayers (MoS2, MoSe2, WS2, WSe2) under the application of biaxial strain and measured their optical properties. For tensile strain we observe a redshift of the bandgap that reaches a value as large as 95 meV/% in the case of single-layer WS2 deposited on polypropylene. The observed bandgap shifts as a function of substrate extension/compression follow the order MoSe2 < MoS2 < WSe2 < WS2. Theoretical calculations of these four materials under biaxial strain predict the same trend for the material-dependent rates of the shift and reproduce well the features observed in the measured reflectance spectra.
△ Less
Submitted 8 March, 2017;
originally announced March 2017.
-
Gate Tunable Photovoltaic Effect in MoS2 vertical P-N Homostructures
Authors:
Simon A. Svatek,
Elisa Antolin,
Der-Yuh Lin,
Riccardo Frisenda,
Christoph Reuter,
Aday J. Molina-Mendoza,
Manuel Muñoz,
Nicolás Agraït,
Tsung-Shine Ko,
David Perez de Lara,
Andres Castellanos-Gomez
Abstract:
P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, s…
▽ More
P-n junctions based on vertically stacked single or few layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, stable and substitutional doping of MoS2 into n- and p-type has been demonstrated. MoS2 is an interesting material to use for optoelectronic applications due to the potential of low-cost production in large quantities, strong light-matter interactions and chemical stability. Here we report the characterization of the optoelectronic properties of vertical homojunctions made by stacking few-layer flakes of MoS2:Fe (n-type) and MoS2:Nb (p-type). The junctions exhibit a peak external quantum efficiency of 4.7 %, a maximum open circuit voltage of 0.51 V, they are stable in air and their rectification characteristics and photovoltaic response are in excellent agreement to the Shockley diode model. The gate-tunability of the maximum output power, the ideality factor and the shunt resistance indicate that the dark current is dominated by trap-assisted recombination and that the photocurrent collection depends strongly on the spatial extent of the space charge region. We demonstrate a response time faster than 80 ms and highlight the potential to integrate such devices into quasi-transparent and flexible optoelectronics.
△ Less
Submitted 10 January, 2017;
originally announced February 2017.
-
Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials
Authors:
Riccardo Frisenda,
Yue Niu,
Patricia Gant,
Aday J. Molina-Mendoza,
Robert Schmidt,
Rudolf Bratschitsch,
Jinxin Liu,
Lei Fu,
Dumitru Dumcenco,
Andras Kis,
David Perez De Lara,
Andres Castellanos-Gomez
Abstract:
Optical spectroscopy techniques such as differential reflectance and transmittance have proven to be very powerful techniques to study 2D materials. However, a thorough description of the experimental setups needed to carry out these measurements is lacking in the literature. We describe a versatile optical microscope setup to carry out differential reflectance and transmittance spectroscopy in 2D…
▽ More
Optical spectroscopy techniques such as differential reflectance and transmittance have proven to be very powerful techniques to study 2D materials. However, a thorough description of the experimental setups needed to carry out these measurements is lacking in the literature. We describe a versatile optical microscope setup to carry out differential reflectance and transmittance spectroscopy in 2D materials with a lateral resolution of ~1 micron in the visible and near-infrared part of the spectrum. We demonstrate the potential of the presented setup to determine the number of layers of 2D materials and to characterize their fundamental optical properties such as excitonic resonances. We illustrate its performance by studying mechanically exfoliated and chemical vapor-deposited transition metal dichalcogenide samples.
△ Less
Submitted 13 December, 2016;
originally announced December 2016.
-
Highly responsive UV-photodetectors based on single electrospun TiO2 nanofibres
Authors:
Aday J. Molina-Mendoza,
Alicia Moya,
Riccardo Frisenda,
Simon A. Svatek,
Patricia Gant,
Sergio Gonzalez-Abad,
Elisa Antolin,
Nicolás Agraït,
Gabino Rubio-Bollinger,
David Perez de Lara,
Juan J. Vilatela,
Andres Castellanos-Gomez
Abstract:
In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the dark give a conductivity above 2*10^-5 S, which increases up to 8*10^-5 S in vacuum. Photocurrent measurements under UV-irradiation show high sensitivity (respo…
▽ More
In this work we study the optoelectronic properties of individual TiO2 fibres produced through coupled sol-gel and electrospinning, by depositing them onto pre-patterned Ti/Au electrodes on SiO2/Si substrates. Transport measurements in the dark give a conductivity above 2*10^-5 S, which increases up to 8*10^-5 S in vacuum. Photocurrent measurements under UV-irradiation show high sensitivity (responsivity of 90 A/W for 375 nm wavelength) and a response time to illumination of ~ 5 s, which is superior to state-of-the-art TiO2-based UV photodetectors. Both responsivity and response speed are higher in air than in vacuum, due to oxygen adsorbed on the TiO2 surface which traps photoexcited free electrons in the conduction band, thus reducing the recombination processes. The photodetectors are sensitive to light polarization, with an anisotropy ratio of 12%. These results highlight the interesting combination of large surface area and low 1D transport resistance in electrospun TiO2 fibres. The simplicity of the sol-gel/electrospinning synthesis method, combined with a fast response and high responsivity makes them attractive candidates for UV-photodetection in ambient conditions. We anticipate their high (photo) conductance is also relevant for photocatalysis and dye-sensitized solar cells.
△ Less
Submitted 3 November, 2016;
originally announced November 2016.
-
Enhanced Visibility of MoS2, MoSe2, WSe2 and Black Phosphorus: Making Optical Identification of 2D Semiconductors Easier
Authors:
Gabino Rubio-Bollinger,
Ruben Guerrero,
David Perez de Lara,
Jorge Quereda,
Luis Vaquero-Garzon,
Nicolas Agraït,
Rudolf Bratschitsch,
Andres Castellanos-Gomez
Abstract:
We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black phosphorus. We find that the use of Si3N4/Si subst…
▽ More
We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black phosphorus. We find that the use of Si3N4/Si substrates provides an increase of the optical contrast up to a 50%-100% and also the maximum contrast shifts towards wavelength values optimal for human eye detection, making optical identification of 2D semiconductors easier.
△ Less
Submitted 17 November, 2015;
originally announced November 2015.
-
Transverse ratchet effect and superconducting vortices: Simulation and experiment
Authors:
L. Dinis,
D. Perez de Lara,
E. M. Gonzalez,
J. V. Anguita,
J. M. R. Parrondo,
J. L. Vicent
Abstract:
A transverse ratchet effect has been measured in magnetic/superconducting hybrid films fabricated by electron beam lithography and magnetron sputtering techniques. The samples are Nb films grown on top of an array of Ni nanotriangles. Injecting an ac current parallel to the triangle reflection symmetry axis yields an output dc voltage perpendicular to the current, due to a net motion of flux vorti…
▽ More
A transverse ratchet effect has been measured in magnetic/superconducting hybrid films fabricated by electron beam lithography and magnetron sputtering techniques. The samples are Nb films grown on top of an array of Ni nanotriangles. Injecting an ac current parallel to the triangle reflection symmetry axis yields an output dc voltage perpendicular to the current, due to a net motion of flux vortices in the superconductor. The effect is reproduced by numerical simulations of vortices as Langevin particles with realistic parameters. Simulations provide an intuitive picture of the ratchet mechanism, revealing the fundamental role played by the random intrinsic pinning of the superconductor.
△ Less
Submitted 23 September, 2014;
originally announced September 2014.
-
Vortex ratchet reversal: The role of interstitial vortices
Authors:
D. Perez de Lara,
M. Erekhinsky,
E. M. Gonzalez,
Y. J. Rosen,
Ivan K. Schuller,
J. L. Vicent
Abstract:
Triangular arrays of Ni nanotriangles embedded in superconducting Nb films exhibit unexpected dynamical vortex effects. Collective pinning with a vortex lattice configuration different from the expected fundamental triangular "Abrikosov state" is found. The vortex motion which prevails against the triangular periodic potential is produced by channelling effects between triangles. Interstitial vort…
▽ More
Triangular arrays of Ni nanotriangles embedded in superconducting Nb films exhibit unexpected dynamical vortex effects. Collective pinning with a vortex lattice configuration different from the expected fundamental triangular "Abrikosov state" is found. The vortex motion which prevails against the triangular periodic potential is produced by channelling effects between triangles. Interstitial vortices coexisting with pinned vortices in this asymmetric potential, lead to ratchet reversal, i.e. a DC output voltage which changes sign with the amplitude of an applied alternating drive current. In this landscape, ratchet reversal is always observed at all magnetic fields (all numbers of vortices) and at different temperatures. The ratchet reversal is unambiguously connected to the presence of two locations for the vortices: interstitial and above the artificial pinning sites.
△ Less
Submitted 7 May, 2011;
originally announced May 2011.
-
Vortex ratchet reversal at fractional matching fields in kagomé-like array with symmetric pinning centers
Authors:
D. Perez de Lara,
A. Alija,
E. M. Gonzalez,
M. Velez,
J. I. Martin,
J. L. Vicent
Abstract:
Arrays of Ni nanodots embedded in Nb superconducting films have been fabricated by sputtering and electron beam lithography techniques. The arrays are periodic triangular lattices of circular Ni dots arranged in a kagomé-like pattern with broken reflection symmetry. Relevant behaviors are found in the vortex lattice dynamics : i) At values lower than the first integer matching field, several fract…
▽ More
Arrays of Ni nanodots embedded in Nb superconducting films have been fabricated by sputtering and electron beam lithography techniques. The arrays are periodic triangular lattices of circular Ni dots arranged in a kagomé-like pattern with broken reflection symmetry. Relevant behaviors are found in the vortex lattice dynamics : i) At values lower than the first integer matching field, several fractional matching fields are present when the vortex lattice moves parallel or perpendicular to the reflection symmetry axis of the array showing a clear anisotropic character in the magnetoresistance curves, ii) injecting an ac current perpendicular to the reflection symmetry axis of the array yields an unidirectional motion of the vortex lattice (ratchet effect) as a result of the interaction between the whole vortex lattice and the asymmetric lattice of dots, iii) increasing the input current amplitudes the ratchet effect changes polarity independently of matching field values. These experimental results can be explained taking into account the vortex lattice density.
△ Less
Submitted 22 October, 2010;
originally announced October 2010.
-
Control of the chirality and polarity of magnetic vortices in triangular nanodots
Authors:
M. Jaafar,
R. Yanes,
D. Perez de Lara,
O. Chubykalo-Fesenko,
A. Asenjo,
E. M. Gonzalez,
J. V. Anguita,
M. Vazquez,
J. L. Vicent
Abstract:
Magnetic vortex dynamics in lithographically prepared nanodots is currently a subject of intensive research, particularly after recent demonstration that the vortex polarity can be controlled by in-plane magnetic field. This has stimulated the proposals of non-volatile vortex magnetic random access memories. In this work, we demonstrate that triangular nanodots offer a real alternative where vor…
▽ More
Magnetic vortex dynamics in lithographically prepared nanodots is currently a subject of intensive research, particularly after recent demonstration that the vortex polarity can be controlled by in-plane magnetic field. This has stimulated the proposals of non-volatile vortex magnetic random access memories. In this work, we demonstrate that triangular nanodots offer a real alternative where vortex chirality, in addition to polarity, can be controlled. In the static regime, we show that vortex chirality can be tailored by applying in-plane magnetic field, which is experimentally imaged by means of Variable-Field Magnetic Force Microscopy. In addition, the polarity can be also controlled by applying a suitable out-of-plane magnetic field component. The experiment and simulations show that to control the vortex polarity, the out-of-plane field component, in this particular case, should be higher than the in-plane nucleation field. Micromagnetic simulations in the dynamical regime show that the magnetic vortex polarity can be changed with short-duration magnetic field pulses, while longer pulses change the vortex chirality.
△ Less
Submitted 15 January, 2010;
originally announced January 2010.
-
Rocking ratchet induced by pure magnetic potentials with broken reflection symmetry
Authors:
D. Perez de Lara,
F. J. Castano,
B. G. Ng,
H. S. Korner,
R. K. Dumas,
E. M. Gonzalez,
Kai Liu,
C. A. Ross,
Ivan K. Schuller,
J. L. Vicent
Abstract:
A ratchet effect (the rectification of an ac injected current) which is purely magnetic in origin has been observed in a superconducting-magnetic nanostructure hybrid. The hybrid consists of a superconducting Nb film in contact with an array of nanoscale magnetic triangles, circular rings or elliptical rings. The arrays were placed into well-defined remanent magnetic states by application of dif…
▽ More
A ratchet effect (the rectification of an ac injected current) which is purely magnetic in origin has been observed in a superconducting-magnetic nanostructure hybrid. The hybrid consists of a superconducting Nb film in contact with an array of nanoscale magnetic triangles, circular rings or elliptical rings. The arrays were placed into well-defined remanent magnetic states by application of different magnetic field cycles. The stray fields from these remanent states provide a magnetic landscape which influences the motion of superconducting vortices. We examined both randomly varying landscapes from demagnetized samples, and ordered landscapes from samples at remanence after saturation in which the magnetic rings form parallel onion states containing two domain walls. The ratchet effect is absent if the rings are in the demagnetized state or if the vortices propagate parallel to the magnetic reflection symmetry axis (perpendicular to the magnetic domain walls) in the ordered onion state. On the other hand, when the vortices move perpendicular to the magnetic reflection symmetry axis in the ordered onion state (parallel to the domain walls) a clear ratchet effect is observed. This behavior differs qualitatively from that observed in samples containing arrays of triangular Ni nanostructures, which show a ratchet of structural origin.
△ Less
Submitted 16 December, 2009;
originally announced December 2009.
