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Electric field manipulation of magnetization in an insulating dilute ferromagnet through piezoelectromagnetic coupling
Authors:
D. Sztenkiel,
K. Gas,
N. Gonzalez Szwacki,
M. Foltyn,
C. Sliwa,
T. Wojciechowski,
J. Z. Domagala,
D. Hommel,
M. Sawicki,
T. Dietl
Abstract:
We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we…
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We report magnetization changes generated by an electric field in ferromagnetic Ga$_{1-x}$Mn$_x$N grown by molecular beam epitaxy. Two classes of phenomena have been revealed. First, over a wide range of magnetic fields, the magnetoelectric signal is odd in the electric field and reversible. Employing a macroscopic spin model and atomistic Landau-Lifshitz-Gilbert theory with Langevin dynamics, we demonstrate that the magnetoelectric response results from the inverse piezoelectric effect that changes the trigonal single-ion magnetocrystalline anisotropy. Second, in the metastable regime of ferromagnetic hystereses, the magnetoelectric effect becomes non-linear and irreversible in response to a time-dependent electric field, which can reorient the magnetization direction. Interestingly, our observations are similar to those reported for another dilute ferromagnetic semiconductor Cr$_x$(Bi$_{1-y}$Sb$_y$)$_{1-x}$Te$_3$, in which magnetization was monitored as a function of the gate electric field. Those results constitute experimental support for theories describing the effects of time-dependent perturbation upon glasses far from thermal equilibrium in terms of an enhanced effective temperature.
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Submitted 19 June, 2024;
originally announced June 2024.
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Anisotropy of strain and crystal deformations of partially relaxed InGaN layers grown on misoriented (0001)-GaN substrates
Authors:
J. Moneta,
M. Krysko,
J. Z. Domagala,
E. Grzanka,
G. Muziol,
M. Siekacz,
M. Leszczynski,
J. Smalc-Koziorowska
Abstract:
Strain relaxation of thick InGaN layers was studied in order to develop technology of InGaN templates for deposition of InGaN Quantum Wells (QWs) and InGaN layers of high-In-content. In this paper, we show that InGaN layers grown on misoriented (0001)-GaN substrates relax by preferential activation of certain glide planes for misfit dislocation formation. Substrate misorientation changes resolved…
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Strain relaxation of thick InGaN layers was studied in order to develop technology of InGaN templates for deposition of InGaN Quantum Wells (QWs) and InGaN layers of high-In-content. In this paper, we show that InGaN layers grown on misoriented (0001)-GaN substrates relax by preferential activation of certain glide planes for misfit dislocation formation. Substrate misorientation changes resolved shear stresses, affecting the distribution of misfit dislocations within each dislocation set. We demonstrate that this mechanism leads to an anisotropic strain as well as a tilt of the InGaN layer with respect to the GaN substrate. It appears that these phenomena are more pronounced in structures grown on substrates misoriented toward <11-20> direction than corresponding structures with <-1100> misorientation. These features would influence the properties of the overgrown InGaN QWs and should be taken into consideration during designing structures grown on relaxed InGaN templates. We reveal that the lattice of partially relaxed InGaN has a triclinic deformation, thus requiring advanced XRD analysis. The presentation of just a single asymmetric reciprocal space map commonly practiced in the literature can lead to misleading information regarding the relaxation state of partially relaxed wurtzite structures.
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Submitted 4 March, 2024;
originally announced March 2024.
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Bridgman-grown (Cd,Mn)Te and (Cd,Mn)(Te,Se): A comparison of suitability for X and gamma detectors
Authors:
Aneta Maslowska,
Dominika M. Kochanowska,
Adrian Sulich,
Jaroslaw Z. Domagala,
Marcin Dopierala,
Michal Kochanski,
Michal Szot,
Witold Chrominski,
Andrzej Mycielski
Abstract:
This study explores the suitability of semi-insulating compounds, specifically (Cd,Mn)Te and (Cd,Mn)(Te,Se), as materials for room temperature X-ray and gamma-ray detectors. These compounds were grown using the Bridgman method, known for its efficient growth rate. The investigation aims to compare their crystal structure, mechanical properties, optical characteristics, and radiation detection capa…
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This study explores the suitability of semi-insulating compounds, specifically (Cd,Mn)Te and (Cd,Mn)(Te,Se), as materials for room temperature X-ray and gamma-ray detectors. These compounds were grown using the Bridgman method, known for its efficient growth rate. The investigation aims to compare their crystal structure, mechanical properties, optical characteristics, and radiation detection capabilities. The addition of selenium to (Cd,Mn)Te increased the compound's hardness. However, (Cd,Mn)(Te,Se) exhibited one order of magnitude higher etch pit density compared to (Cd,Mn)Te. Photoluminescence analysis at low temperatures revealed the presence of defect states in both materials, characterized by shallow and deep donor-acceptor pair transitions (DAP). Annealing in cadmium vapors effectively eliminated DAP luminescence in (Cd,Mn)Te but not in (Cd,Mn)(Te,Se). Spectroscopic performance assessments indicated that the (Cd,Mn)Te detector outperformed the (Cd,Mn)(Te,Se) detector in responding to a Co-57 source. The reduced performance in the latter case may be attributed to either the presence of a deep trap related to deep DAP luminescence, minimally affected by annealing, or the dominant presence of block-like structures in the samples, as indicated by X-ray diffraction measurements. The block-like structures in (Cd,Mn)(Te,Se) showed ten times larger misorientation angles compared to the (Cd,Mn)Te crystals. (Cd,Mn)Te crystal revealed excellent single crystal properties, demonstrated by narrower omega scan widths. The study also highlights the influence of grain boundaries and twins on crystal structure quality. In our opinion, Bridgman-grown (Cd,Mn)Te shows greater promise as a material for X-ray and gamma-ray detectors compared to (Cd,Mn)(Te,Se).
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Submitted 26 October, 2023;
originally announced October 2023.
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Coexistence of Anomalous Hall Effect and Weak Net Magnetization in Collinear Antiferromagnet MnTe
Authors:
K. P. Kluczyk,
K. Gas,
M. J. Grzybowski,
P. Skupiński,
M. A. Borysiewicz,
T. Fąs,
J. Suffczyński,
J. Z. Domagala,
K. Grasza,
A. Mycielski,
M. Baj,
K. H. Ahn,
K. Výborný,
M. Sawicki,
M. Gryglas-Borysiewicz
Abstract:
Anomalous Hall effect (AHE) plays important role in the rapidly developing field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic materials. Hexagonal MnTe belongs to this appealing group of compounds exhibiting AHE and is commonly perceived as magnetically compensated. Here, we demonstrat…
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Anomalous Hall effect (AHE) plays important role in the rapidly developing field of antiferromagnetic spintronics. It has been recently discussed that it can be a feature of not only uncompensated magnetic systems but also in altermagnetic materials. Hexagonal MnTe belongs to this appealing group of compounds exhibiting AHE and is commonly perceived as magnetically compensated. Here, we demonstrate that bulk form of MnTe exhibits small but detectable magnetic moment correlating with hysteretic behaviour of the AHE. We formulate a phenomenological model which explains how this feature allows to create a disbalance between states with opposite Néel vector and prevent the AHE signal from averaging out to zero. Moreover, we show how the dependence of AHE on the Néel vector arises on microscopical level and highlight the differences in Berry curvature between magnetically compensated and uncompensated systems.
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Submitted 13 October, 2023;
originally announced October 2023.
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Optical, electronic and structural properties of ScAlMgO4
Authors:
Tomasz Stefaniuka,
Jan Suffczyński,
Małgorzata Wierzbowsk,
Jarosław Z. Domagała,
Jarosław Kisielewski,
Andrzej Kłos,
Alexander Korneluk,
Henryk Teisseyre
Abstract:
Magnesium aluminate scandium oxide (ScAlMgO4) is a promising lattice-matched substrate material for GaN- and ZnO-based optoelectronic devices. Yet, despite its clear advantages over substrates commonly used in heteroepitaxial growth, several fundamental properties of ScAlMgO4 remain unsettled. Here, we provide a comprehensive picture of its optical, electronic and structural properties by studying…
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Magnesium aluminate scandium oxide (ScAlMgO4) is a promising lattice-matched substrate material for GaN- and ZnO-based optoelectronic devices. Yet, despite its clear advantages over substrates commonly used in heteroepitaxial growth, several fundamental properties of ScAlMgO4 remain unsettled. Here, we provide a comprehensive picture of its optical, electronic and structural properties by studying ScAlMgO4 single crystals grown by the Czochralski method. We use variable angle spectroscopic ellipsometry to determine complex in-plane and out-of-plane refractive indices in the range from 193 to 1690 nm. An oscillator-based model provides a phenomenological description of the ellipsometric spectra with excellent agreement over the entire range of wavelengths. For convenience, we supply the reader also with Cauchy formulas describing the real part of the anisotropic refractive index for wavelengths above 400 nm. Ab initio many-body perturbation theory modeling provides information about the electronic structure of ScAlMgO4, and successfully validated experimentally obtained refractive index values. Simulations also show exciton binding energy as large as a few hundred of meV, indicating ScAlMgO4 as a promising material for implementation in low-threshold, deep-UV lasing devices operating at room temperature. X-ray diffraction measurements confirm lattice constants of ScAlMgO4 previously reported, but in addition, reveal that dominant crystallographic planes (001) are mutually inclined by about 0.009°. In view of our work, ScAlMgO4 is a highly transparent, low refractive index, birefringent material similar to a sapphire, but with a much more favorable lattice constant and simpler processing.
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Submitted 8 March, 2023;
originally announced March 2023.
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Structural properties of TaAs Weyl semimetal thin films grown by molecular beam epitaxy on GaAs(001) substrates
Authors:
Janusz Sadowski,
Jarosław Z. Domagała,
Wiktoria Zajkowska,
Sławomir Kret,
Bartłomiej Seredyński,
Marta Gryglas-Borysiewicz,
Zuzanna Ogorzałek,
Rafał Bożek,
Wojciech Pacuski
Abstract:
Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45°. In spite of a substantial lattice mismatch (about 19%) between GaAs(001)…
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Thin crystalline layers of TaAs Weyl semimetal (9 and 18 nm thick) are grown by molecular beam epitaxy on GaAs(001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the GaAs(001) substrate, but the corresponding in-plane crystallographic directions of the substrate and the layer are rotated by 45°. In spite of a substantial lattice mismatch (about 19%) between GaAs(001) substrate and TaAs epilayer no misfit dislocations are observed at the GaAs(001)/TaAs(001) interface. Only stacking fault defects in TaAs are detected with transmission electron microscopy. Thorough X-ray diffraction measurements and analysis of the in-situ reflection high energy electron diffraction images indicates that TaAs layers are fully relaxed already at the initial deposition stage. Atomic force microscopy imaging reveals the columnar structure of the layers, with lateral (parallel to the layer surface) columns about 20 nm wide and 200 nm long. Both X-ray diffraction and transmission electron microscopy measurements indicate that the columns share the same orientation and crystalline structure.
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Submitted 4 September, 2022; v1 submitted 1 September, 2022;
originally announced September 2022.
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Bi Incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires
Authors:
Janusz Sadowski,
Anna Kaleta,
Serhii Kryvyi,
Dorota Janaszko,
Bogusława Kurowska,
Marta Bilska,
Tomasz Wojciechowski,
Jarosław Z. Domagala,
Ana M. Sanchez,
Sławomir Kret
Abstract:
Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completel…
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Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core-shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown at low temperature (300 °C) with a close to stoichiometric Ga/As flux ratio. At low Bi fluxes, the Ga(As,Bi) shells are smooth, with Bi completely incorporated into the shells. Higher Bi fluxes (Bi/As flux ratio ~ 4%) led to partial segregation of Bi as droplets on the nanowires sidewalls, preferentially located at the nanowire segments with wurtzite structure. We demonstrate that such Bi droplets on the sidewalls act as catalysts for the growth of branches perpendicular to the GaAs trunks. Due to the tunability between zinc-blende and wurtzite polytypes by changing the nanowire growth conditions, this effect enables fabrication of branched nanowire architectures with branches generated from selected (wurtzite) nanowire segments.
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Submitted 23 June, 2022;
originally announced June 2022.
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Crystal field model simulations of magnetic response of pairs, triplets and quartets of Mn$^{3+}$ ions in GaN
Authors:
D. Sztenkiel,
K. Gas,
J. Z. Domagala,
D. Hommel,
M. Sawicki
Abstract:
A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$N. In the limit of small Mn concentrations, $x \lesssim 0.01$, the paramagnetic properties of this material were successfully described using a single ion crystal field model approach. In…
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A ferromagnetic coupling between localized Mn spins was predicted in a series of \textit{ab initio} and tight binding calculations and experimentally verified for the dilute magnetic semiconductor Ga$_{1-x}$Mn$_x$N. In the limit of small Mn concentrations, $x \lesssim 0.01$, the paramagnetic properties of this material were successfully described using a single ion crystal field model approach. In order to obtain the description of magnetization in (Ga,Mn)N in the presence of interacting magnetic centers, we extend the previous model of a single substitutional Mn$^{3+}$ ion in GaN by considering pairs, triplets and quartets of Mn$^{3+}$ ions coupled by a ferromagnetic superexchange interaction. Using this approach we investigate how the magnetic properties, particularly the magnitude of the uniaxial anisotropy field, change as the number of magnetic Mn$^{3+}$ ions in a given cluster increases from 1 to 4. Our simulations are then exploited in explaining experimental magnetic properties of Ga$_{1-x}$Mn$_x$N with $x \cong 0.03$, where the presence of small magnetic clusters gains in significance. As a result the approximate lower and upper limits for the values of exchange couplings between Mn$^{3+}$ ions in GaN, being in nearest neighbors $J_{\mathrm{nn}}$ and next nearest neighbors $J_{\mathrm{nnn}}$ positions, respectively, are established.
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Submitted 1 December, 2020; v1 submitted 23 June, 2020;
originally announced June 2020.
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Signatures of dephasing by mirror-symmetry breaking in weak-antilocalization magnetoresistance across the topological transition in Pb$_{1-x}$Sn$_{x}$Se
Authors:
Alexander Kazakov,
Wojciech Brzezicki,
Timo Hyart,
Bartłomiej Turowski,
Jakub Polaczyński,
Zbigniew Adamus,
Marta Aleszkiewicz,
Tomasz Wojciechowski,
Jaroslaw Z. Domagala,
Ondrej Caha,
Andrei Varykhalov,
Gunther Springholz,
Tomasz Wojtowicz,
Valentine V. Volobuev,
Tomasz Dietl
Abstract:
Many conductors, including recently studied Dirac materials, show saturation of coherence length on decreasing temperature. This surprising phenomenon is assigned to external noise, residual magnetic impurities or two-level systems specific to non-crystalline solids. Here, by considering the SnTe-class of compounds as an example, we show theoretically that breaking of mirror symmetry deteriorates…
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Many conductors, including recently studied Dirac materials, show saturation of coherence length on decreasing temperature. This surprising phenomenon is assigned to external noise, residual magnetic impurities or two-level systems specific to non-crystalline solids. Here, by considering the SnTe-class of compounds as an example, we show theoretically that breaking of mirror symmetry deteriorates Berry's phase quantization, leading to additional dephasing in weak-antilocalization magnetoresistance (WAL-MR). Our experimental studies of WAL-MR corroborate these theoretical expectations in (111) Pb$_{1-x}$Sn$_x$Se thin film with Sn contents $x$ corresponding to both topological crystalline insulator and topologically trivial phases. In particular, we find the shortening of the phase coherence length in samples with intentionally broken mirror symmetry. Our results indicate that the classification of quantum transport phenomena into universality classes should encompass, in addition to time-reversal and spin-rotation invariances, spatial symmetries in specific systems.
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Submitted 21 June, 2021; v1 submitted 18 February, 2020;
originally announced February 2020.
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Structural defects in MBE-grown CdTe-based heterojunctions for photovoltaic applications
Authors:
Karolina Wichrowska,
Tadeusz Wosinski,
Jaroslaw Z. Domagala,
Slawomir Kret,
Sergij Chusnutdinow,
Grzegorz Karczewski
Abstract:
Structural defects in the p-ZnTe/i-CdTe/n-CdTe single-crystalline heterojunctions designed for photovoltaic applications have been investigated by transmission electron microscopy (TEM) and deep-level transient spectroscopy (DLTS). Lattice parameters and misfit strain in the undoped CdTe absorber layers of the heterojunctions, grown by the molecular-beam epitaxy technique on two different substrat…
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Structural defects in the p-ZnTe/i-CdTe/n-CdTe single-crystalline heterojunctions designed for photovoltaic applications have been investigated by transmission electron microscopy (TEM) and deep-level transient spectroscopy (DLTS). Lattice parameters and misfit strain in the undoped CdTe absorber layers of the heterojunctions, grown by the molecular-beam epitaxy technique on two different substrates, GaAs and CdTe, have been determined with high-resolution X-ray diffractometry. A dense network of misfit dislocations at the lattice-mismatched CdTe/GaAs and ZnTe/CdTe interfaces and numerous threading dislocations and stacking faults have been shown by the cross-sectional TEM imaging of the heterojunctions. The DLTS measurements revealed five deep-level traps in the heterojunctions grown on the GaAs substrates and only three of them in the heterojunctions grown on CdTe. One of the traps, showing the exponential capture kinetics of charge carriers, has been identified as associated with the double acceptor level of Cd vacancies in the CdTe absorber layers. All the other traps have been attributed to the electronic states of extended defects, presumably dislocations, on the grounds of their logarithmic capture kinetics. Two of these traps, displaying the largest values of their capture cross-section and the properties characteristic of bandlike electronic states, have been ascribed to the core states of dislocations. It is argued that they are most likely responsible for decreased lifetime of photo-excited carriers resulting in a low energy conversion efficiency of solar cells based on similarly grown heterojunctions.
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Submitted 24 December, 2019;
originally announced December 2019.
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Probing spatial extent of topological surface states by weak antilocalization experiments
Authors:
K. Dybko,
G. P. Mazur,
W. Wolkanowicz,
M. Szot,
P. Dziawa,
J. Z. Domagala,
M. Wiater,
T. Wojtowicz,
G. Grabecki,
T. Story
Abstract:
Weak antilocalization measurements has become a standard tool for studying quantum coherent transport in topological materials. It is often used to extract information about number of conducting channels and dephasing length of topological surface states. We study thin films of prototypical topological crystalline insulator SnTe. To access microscopic characteristic of these states we employ a mod…
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Weak antilocalization measurements has become a standard tool for studying quantum coherent transport in topological materials. It is often used to extract information about number of conducting channels and dephasing length of topological surface states. We study thin films of prototypical topological crystalline insulator SnTe. To access microscopic characteristic of these states we employ a model developed by Tkachov and Hankiewicz, [Physical Review B 84, 035444]. Using this model the spatial decay of the topological states is obtained from measurements of quantum corrections to the conductivity in perpendicular and parallel configurations of the magnetic field. Within this model we find interaction between two topological boundaries which results in scaling of the spatial decay with the film thickness. We attribute this behavior to bulk reservoir which mediates interactions by scattering events without phase breaking of topological carriers.
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Submitted 20 December, 2018;
originally announced December 2018.
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Impact of substrate temperature on magnetic properties of plasma-assisted molecular beam epitaxy grown (Ga,Mn)N
Authors:
Katarzyna Gas,
Jaroslaw Z. Domagala,
Rafal Jakiela,
Gerd Kunert,
Piotr Dluzewski,
Edyta Piskorska-Hommel,
Wojciech Paszkowicz,
Dariusz Sztenkiel,
Maciej J. Winiarski,
Dorota Kowalska,
Rafal Szukiewicz,
Tomasz Baraniecki,
Andrzej Miszczuk,
Detlef Hommel,
Maciej Sawicki
Abstract:
A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 °C, respectively. We present a systematic structural and microstructure characterization by atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy, powd…
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A range of high quality Ga1-xMnxN layers have been grown by molecular beam epitaxy with manganese concentration 0.2 < x < 10%, having the x value tuned by changing the growth temperature (Tg) between 700 and 590 °C, respectively. We present a systematic structural and microstructure characterization by atomic force microscopy, secondary ion mass spectrometry, transmission electron microscopy, powder-like and high resolution X-ray diffraction, which do not reveal any crystallographic phase separation, clusters or nanocrystals, even at the lowest Tg. Our synchrotron based X-ray absorption near-edge spectroscopy supported by density functional theory modelling and superconducting quantum interference device magnetometry results point to the predominantly +3 configuration of Mn in GaN and thus the ferromagnetic phase has been observed in layers with x > 5% at 3 < T < 10 K. The main detrimental effect of Tg reduced to 590 °C is formation of flat hillocks, which increase the surface root-mean-square roughness, but only to mere 3.3 nm. Fine substrates surface temperature mapping has shown that the magnitudes of both x and Curie temperature (Tc) correlate with local Tg. It has been found that a typical 10 °C variation of Tg across 1 inch substrate can lead to 40% dispersion of Tc. The established here strong sensitivity of Tc on Tg turns magnetic measurements into a very efficient tool providing additional information on local Tg, an indispensable piece of information for growth mastering of ternary compounds in which metal species differ in almost every aspect of their growth related parameters determining the kinetics of the growth. We also show that the precise determination of Tc by two different methods, each sensitive to different moments of Tc distribution, may serve as a tool for quantification of spin homogeneity within the material.
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Submitted 8 March, 2018;
originally announced March 2018.
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Cubic anisotropy in high homogeneity thin (Ga,Mn)As layers
Authors:
M. Sawicki,
O. Proselkov,
C. Sliwa,
P. Aleshkevych,
J. Z. Domagala,
J. Sadowski,
T. Dietl
Abstract:
Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., $p$-type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such as crystalline magnetic anisotropy. In particular, the theory was successful in explaining {\em uniaxial} magnetic anisotropies associated with biaxial strain a…
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Historically, comprehensive studies of dilute ferromagnetic semiconductors, e.g., $p$-type (Cd,Mn)Te and (Ga,Mn)As, paved the way for a quantitative theoretical description of effects associated with spin-orbit interactions in solids, such as crystalline magnetic anisotropy. In particular, the theory was successful in explaining {\em uniaxial} magnetic anisotropies associated with biaxial strain and non-random formation of magnetic dimers in epitaxial (Ga,Mn)As layers. However, the situation appears much less settled in the case of the {\em cubic} term: the theory predicts switchings of the easy axis between in-plane $\langle 100\rangle$ and $\langle 110\rangle$ directions as a function of the hole concentration, whereas only the $\langle 100\rangle$ orientation has been found experimentally. Here, we report on the observation of such switchings by magnetization and ferromagnetic resonance studies on a series of high-crystalline quality (Ga,Mn)As films. We describe our findings by the mean-field $p$-$d$ Zener model augmented with three new ingredients. The first one is a scattering broadening of the hole density of states, which reduces significantly the amplitude of the alternating carrier-induced contribution. This opens the way for the two other ingredients, namely the so-far disregarded single-ion magnetic anisotropy and disorder-driven non-uniformities of the carrier density, both favoring the $\langle 100\rangle$ direction of the apparent easy axis. However, according to our results, when the disorder gets reduced a switching to the $\langle 110\rangle$ orientation is possible in a certain temperature and hole concentration range.
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Submitted 23 February, 2018; v1 submitted 31 January, 2018;
originally announced February 2018.
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Experimental search for the origin of low-energy modes in topological materials
Authors:
G. P. Mazur,
K. Dybko,
A. Szczerbakow,
J. Z. Domagala,
A. Kazakov,
M. Zgirski,
E. Lusakowska,
S. Kret,
J. Korczak,
T. Story,
M. Sawicki,
T. Dietl
Abstract:
Point-contact spectroscopy of several non-superconducting topological materials reveals a low temperature phase transition that is characterized by a Bardeen-Cooper-Schrieffer-type of criticality. We find such a behavior of differential conductance for topological surfaces of non-magnetic and magnetic Pb$_{1-y-x}$Sn$_y$Mn$_x$Te. We examine a possible contribution from superconducting nanoparticles…
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Point-contact spectroscopy of several non-superconducting topological materials reveals a low temperature phase transition that is characterized by a Bardeen-Cooper-Schrieffer-type of criticality. We find such a behavior of differential conductance for topological surfaces of non-magnetic and magnetic Pb$_{1-y-x}$Sn$_y$Mn$_x$Te. We examine a possible contribution from superconducting nanoparticles, and show to what extent our data are consistent with Brzezicki's et al. theory [arXiv:1812.02168], assigning the observations to a collective state adjacent to atomic steps at topological surfaces.
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Submitted 27 July, 2019; v1 submitted 12 September, 2017;
originally announced September 2017.
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On the origin of magnetism in (Ga,Mn)As: from paramagnetic through superparamagnetic to ferromagnetic phase
Authors:
L. Gluba,
O. Yastrubchak,
J. Z. Domagala,
R. Jakiela,
T. Andrearczyk,
J. Żuk,
T. Wosinski,
J. Sadowski,
M. Sawicki
Abstract:
The high-spectral-resolution spectroscopic studies of the energy gap evolution, supplemented with electronic, magnetic and structural characterization, show that the modification of the GaAs valence band caused by Mn incorporation occurs already for a very low Mn content, much lower than that required to support ferromagnetic spin - spin coupling in (Ga,Mn)As. Only for n-type (Ga,Mn)As with the Mn…
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The high-spectral-resolution spectroscopic studies of the energy gap evolution, supplemented with electronic, magnetic and structural characterization, show that the modification of the GaAs valence band caused by Mn incorporation occurs already for a very low Mn content, much lower than that required to support ferromagnetic spin - spin coupling in (Ga,Mn)As. Only for n-type (Ga,Mn)As with the Mn content below about 0.3% the Mn-related extended states are visible as a feature detached from the valence-band edge and partly occupied with electrons. The combined magnetic and low-temperature photoreflectance studies presented here indicate that the paramagnetic - ferromagnetic transformation in p-type (Ga,Mn)As takes place without imposing changes of the unitary character of the valence band with the Fermi level located therein. The whole process is rooted in the nanoscale fluctuations of the local (hole) density of states and the formation of a superparamagnetic-like state. The Fermi level in (Ga,Mn)As is coarsened by the carrier concentration of the itinerant valence band holes and further fine-tuned by the many-body interactions.
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Submitted 21 August, 2017;
originally announced August 2017.
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Experimental evidence for topological surface states wrapping around bulk SnTe crystal
Authors:
K. Dybko,
M. Szot,
A. Szczerbakow,
M. U. Gutowska,
T. Zajarniuk,
J. Z. Domagala,
A. Szewczyk,
T. Story,
W. Zawadzki
Abstract:
We demonstrate that the metallic topological surface states wrap on all sides the 3D topological crystalline insulator SnTe. This is achieved by studying oscillatory quantum magneto-transport and magnetization at tilted magnetic fields which enables us to observe simultaneous contributions from neighbouring sample sides. Taking into account pinning of the Fermi energy by the SnTe reservoir we succ…
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We demonstrate that the metallic topological surface states wrap on all sides the 3D topological crystalline insulator SnTe. This is achieved by studying oscillatory quantum magneto-transport and magnetization at tilted magnetic fields which enables us to observe simultaneous contributions from neighbouring sample sides. Taking into account pinning of the Fermi energy by the SnTe reservoir we successfully describe theoretically the de Haas-van Alphen oscillations of magnetization. The determined π-Berry phase of surface states confirms their Dirac fermion character. We independently observe oscillatory contributions of magneto-transport and magnetization originating from the bulk SnTe reservoir of high hole density. It is concluded that the bulk and surface Landau states exist in parallel. Our main result that the bulk reservoir is surrounded on all sides by the topological surface states has an universal character.
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Submitted 19 July, 2017;
originally announced July 2017.
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Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As): Magnetic and Magneto-Transport Investigations
Authors:
K. Levchenko,
T. Andrearczyk,
J. Z. Domagala,
J. Sadowski,
L. Kowalczyk,
M. Szot,
R. Kuna,
T. Figielski,
T. Wosinski
Abstract:
Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magne…
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Magnetic and magneto-transport properties of thin layers of the (Ga,Mn)(Bi,As) quaternary dilute magnetic semiconductor grown by the low-temperature molecular-beam epitaxy technique on GaAs substrates have been investigated. Ferromagnetic Curie temperature and magneto-crystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Postgrowth annealing treatment has been shown to enhance the hole concentration and Curie temperature in the layers. Significant increase in the magnitude of magnetotransport effects caused by incorporation of a small amount of Bi into the (Ga,Mn)As layers revealed in the planar Hall effect (PHE) measurements, is interpreted as a result of enhanced spin-orbit coupling in the (Ga,Mn)(Bi,As) layers. Two-state behaviour of the planar Hall resistance at zero magnetic field provides its usefulness for applications in nonvolatile memory devices.
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Submitted 9 July, 2016;
originally announced July 2016.
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Hybrid reciprocal lattice: application to layer stress appointment in GaAlN/GaN(0001) systems with patterned substrates
Authors:
Jarosław Z. Domagała,
Sérgio L. Morelhão,
Marcin Sarzyński,
Marcin Maździarz,
Paweł Dłużewski,
Michał Leszczyński
Abstract:
Epitaxy of semiconductors is a process of tremendous importance in applied science and optoelectronic industry. Controlling of defects introduced during epitaxial growth is a key point in manufacturing devices of high efficiency and durability. In this work, we demonstrate how useful hybrid reflections are on the study of epitaxial structures with anisotropic strain gradients due to patterned subs…
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Epitaxy of semiconductors is a process of tremendous importance in applied science and optoelectronic industry. Controlling of defects introduced during epitaxial growth is a key point in manufacturing devices of high efficiency and durability. In this work, we demonstrate how useful hybrid reflections are on the study of epitaxial structures with anisotropic strain gradients due to patterned substrates. High accuracy to detect and distinguish elastic and plastic relaxations are one of the greatest advantages of measuring this type of reflection, as well as the fact that it can be exploited in symmetrical reflection geometry on a commercial high-resolution diffractometer.
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Submitted 2 March, 2016;
originally announced March 2016.
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Magnetic anisotropy induced by crystal distortion in Ge1-xMn xTe/PbTe//KCl (001) ferromagnetic semiconductor layers
Authors:
W. Knoff,
A. Łusakowski,
J. Z. Domagała,
R. Minikayev,
B. Taliashvili,
E. Łusakowska,
A. Pieniążek,
A. Szczerbakow,
T. Story
Abstract:
Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is contr…
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Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge1-xMnxTe layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.
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Submitted 22 July, 2015;
originally announced July 2015.
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Effect of Misfit Strain in (Ga,Mn)(Bi,As) Epitaxial Layers on their Magnetic and Magneto-Transport Properties
Authors:
K. Levchenko,
T. Andrearczyk,
J. Z. Domagala,
J. Sadowski,
L. Kowalczyk,
M. Szot,
T. Figielski,
T. Wosinski
Abstract:
Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to th…
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Effect of misfit strain in the layers of (Ga,Mn)(Bi,As) quaternary diluted magnetic semiconductor, epitaxially grown on either GaAs substrate or (In,Ga)As buffer, on their magnetic and magneto-transport properties has been investigated. High-resolution X-ray diffraction, applied to characterize the structural quality and misfit strain in the layers, proved that the layers were fully strained to the GaAs substrate or (In,Ga)As buffer under compressive or tensile strain, respectively. Ferromagnetic Curie temperature and magnetocrystalline anisotropy of the layers have been examined by using magneto-optical Kerr effect magnetometry and low-temperature magneto-transport measurements. Post-growth annealing treatment of the layers has been shown to enhance the hole concentration and Curie temperature in the layers.
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Submitted 29 June, 2015;
originally announced June 2015.
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Magnetic and magneto-transport characterization of (Ga,Mn)(Bi,As) epitaxial layers
Authors:
K. Levchenko,
T. Andrearczyk,
J. Z. Domagala,
T. Wosinski,
T. Figielski,
J. Sadowski
Abstract:
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement o…
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High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Bi into the layers is interpreted as a result of increased spin-orbit coupling in the (Ga,Mn)(Bi,As) layers.
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Submitted 19 June, 2014;
originally announced June 2014.
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Observation of topological crystalline insulator surface states on (111)-oriented Pb$_{1-x}$Sn$_{x}$Se films
Authors:
C. M. Polley,
P. Dziawa,
A. Reszka,
A. Szczerbakow,
R. Minikayev,
J. Z. Domagala,
S. Safaei,
P. Kacman,
R. Buczko,
J. Adell,
M. H. Berntsen,
B. M. Wojek,
O. Tjernberg,
B. J. Kowalski,
T. Story,
T. Balasubramanian
Abstract:
We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion at $\barΓ$ and $\bar{M}$ in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the…
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We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion at $\barΓ$ and $\bar{M}$ in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the parallel dispersion isotropy and Dirac-point binding energy of the surface states, and perform tight-binding calculations to support our findings. The relative simplicity of the growth technique is encouraging, and suggests a clear path for future investigations into the role of strain, vicinality and alternative surface orientations in (Pb,Sn)Se compounds.
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Submitted 11 December, 2013;
originally announced December 2013.
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Effect of low-temperature annealing on the electronic- and band-structure of (Ga,Mn)As epitaxial layers
Authors:
O. Yastrubchak,
T. Andrearczyk,
J. Z. Domagala,
J. Sadowski,
L. Gluba,
J. Zuk,
T Wosinski
Abstract:
The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and SQUID…
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The effect of outdiffusion of Mn interstitials from (Ga,Mn)As epitaxial layers, caused by post-growth low-temperature annealing, on their electronic- and band-structure properties has been investigated by modulation photoreflectance (PR) spectroscopy. The annealing-induced changes in structural and magnetic properties of the layers were examined with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. They confirmed an outdiffusion of Mn interstitials from the layers and an enhancement in their hole concentration, which were more efficient for the layer covered with a Sb cap acting as a sink for diffusing Mn interstitials. The PR results revealing a decrease in the band-gap-transition energy in the as-grown (Ga,Mn)As layers, with respect to that in the reference GaAs one, are interpreted by assuming a merging of the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy in the annealed (Ga,Mn)As layers is interpreted as a result of the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the enhanced free-hole concentration. The experimental results are consistent with the valence-band origin of mobile holes mediating ferromagnetic ordering in (Ga,Mn)As, in agreement with the Zener model for ferromagnetic semiconductors.
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Submitted 17 May, 2013;
originally announced May 2013.
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Electronic- and band-structure evolution in low-doped (Ga,Mn)As
Authors:
O. Yastrubchak,
J. Sadowski,
H. Krzyzanowska,
L. Gluba,
J. Zuk,
J. Z. Domagala,
T. Andrearczyk,
T. Wosinski
Abstract:
Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed re…
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Modulation photoreflectance spectroscopy and Raman spectroscopy have been applied to study the electronic- and band-structure evolution in (Ga,Mn)As epitaxial layers with increasing Mn doping in the range of low Mn content, up to 1.2%. Structural and magnetic properties of the layers were characterized with high-resolution X-ray diffractometry and SQUID magnetometery, respectively. The revealed results of decrease in the band-gap transition energy with increasing Mn content in very low-doped (Ga,Mn)As layers with n-type conductivity are interpreted as a result of merging the Mn-related impurity band with the host GaAs valence band. On the other hand, an increase in the band-gap-transition energy with increasing Mn content in (Ga,Mn)As layers with higher Mn content and p-type conductivity indicates the Moss-Burstein shift of the absorption edge due to the Fermi level location within the valence band, determined by the free-hole concentration. The experimental results are consistent with the valence-band origin of mobile holes mediated ferromagnetic ordering in the (Ga,Mn)As diluted ferromagnetic semiconductor.
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Submitted 17 May, 2013;
originally announced May 2013.
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Spatially controlled formation of superparamagnetic (Mn,Ga)As nanocrystals in high temperature annealed (Ga,Mn)As/GaAs superlattices
Authors:
J. Sadowski,
J. Z. Domagala,
R. Mathieu,
A. Kovacs,
P. Dluzewski
Abstract:
The annealing-induced formation of (Mn,Ga)As nanocrystals in (Ga,Mn)As/GaAs superlattices was studied by X-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 A thick (Ga,Mn)As layers separated by 25, 50 and 100 A thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 C), and then annealed at high temperatures of: 400, 56…
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The annealing-induced formation of (Mn,Ga)As nanocrystals in (Ga,Mn)As/GaAs superlattices was studied by X-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 A thick (Ga,Mn)As layers separated by 25, 50 and 100 A thick GaAs spacers were grown by molecular beam epitaxy at low temperature (250 C), and then annealed at high temperatures of: 400, 560 and 630 C. The high temperature annealing causes decomposition to GaMnAs ternary alloy and formation of (Mn,Ga)As nanocrystals inside the GaAs matrix. The nanocrystals are confined in the planes that were formerly occupied by (Ga,Mn)As layers for up to the 560 C of annealing and diffuse throughout the GaAs spacer layers at 630 C annealing. The corresponding magnetization measurements show the evolution of the magnetic properties of as-grown and annealed samples from ferromagnetic, through superparamagnetic to the combination of both.
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Submitted 13 January, 2012; v1 submitted 10 January, 2012;
originally announced January 2012.
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Formation process and superparamagnetic properties of (Mn,Ga)As nanocrystals in GaAs fabricated by annealing of (Ga,Mn)As layers with low Mn content
Authors:
Janusz Sadowski,
Jaroslaw Z. Domagala,
Roland Mathieu,
Andras Kovacs,
Takeshi Kasama,
Rafal E. Dunin-Borkowski,
Tomasz Dietl
Abstract:
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate (400C) and high temperature (560 and 630C) annealing of (Ga,Mn)As layers with Mn concentrations between 0.1 and 2%, grown by molecular beam epitaxy at 270oC.…
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X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by moderate (400C) and high temperature (560 and 630C) annealing of (Ga,Mn)As layers with Mn concentrations between 0.1 and 2%, grown by molecular beam epitaxy at 270oC. Decomposition of (Ga,Mn)As is already observed at the lowest annealing temperature of 400C for layers with initial Mn content of 1% and 2%. Both cubic and hexagonal (Mn,Ga)As nanocrystals, with similar diameters of 7 - 10 nm are observed to coexist in layers with an initial Mn content of 0.5% after higher temperature annealing. Measurements of magnetization relaxation in the time span 0.1 - 10 000 s provide evidence for superparamagnetic properties of the (Mn,Ga)As nanocrystals, as well as for the absence of spin-glass dynamics. These findings point to weak coupling between nanocrystals even in layers with the highest nanocrystal density.
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Submitted 15 September, 2011; v1 submitted 17 February, 2011;
originally announced February 2011.
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Photoreflectance Study of the Fundamental Optical Properties of (Ga,Mn)As Epitaxial Films
Authors:
O. Yastrubchak,
J. Zuk,
H. Krzyzanowska,
J. Z. Domagala,
T. Andrearczyk,
J. Sadowski,
T. Wosinski
Abstract:
Fundamental optical properties of thin films of (Ga,Mn)As diluted ferromagnetic semiconductor with a low (1%) and high (6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by photoreflectance (PR) spectroscopy. In addition, the films were subjected to complementary characterization by means of superconducting quantum interference dev…
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Fundamental optical properties of thin films of (Ga,Mn)As diluted ferromagnetic semiconductor with a low (1%) and high (6%) Mn content and of a reference GaAs film, grown by low-temperature molecular-beam epitaxy, have been investigated by photoreflectance (PR) spectroscopy. In addition, the films were subjected to complementary characterization by means of superconducting quantum interference device (SQUID) magnetometry, Raman spectroscopy, and high resolution X-ray diffractometry. Thorough full-line-shape analysis of the PR spectra, which enabled determination of the E0 electronic transition in (Ga,Mn)As, revealed significant differences between the energy band structures in vicinity of the Γ point of the Brillouin zone for the two (Ga,Mn)As films. In view of the obtained experimental results the evolution of the valence band structure in (Ga,Mn)As with increasing Mn content is discussed, pointing to a merging the Mn-related impurity band with the host GaAs valence band for high Mn content.
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Submitted 21 December, 2010;
originally announced December 2010.
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New evidence for structural and magnetic properties of GaAs:(Mn,Ga)As granular layers
Authors:
J. Bak-Misiuk,
K. Lawniczak-Jablonska,
E. Dynowska,
P. Romanowski,
J. Z. Domagala,
J. Libera,
A. Wolska,
M. T. Klepka,
P. Dluzewski,
J. Sadowski,
A. Barcz,
D. Wasik,
A. Twardowski,
A. Kwiatkowski,
W. Caliebe
Abstract:
Structural and magnetic properties of GaAs thin films with embedded MnAs nanoclusters were investigated as function of the annealing temperature and layers composition. The presence of two kinds of nanoclusters with different dimensions and structure were detected. The fraction of Mn atoms in each kind of cluster was estimated from the extended X-ray absorption fine structure analysis. This analys…
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Structural and magnetic properties of GaAs thin films with embedded MnAs nanoclusters were investigated as function of the annealing temperature and layers composition. The presence of two kinds of nanoclusters with different dimensions and structure were detected. The fraction of Mn atoms in each kind of cluster was estimated from the extended X-ray absorption fine structure analysis. This analysis ruled out the possibility of the existence of nanoclusters containing a hypothetic MnAs cubic compound - only (Mn,Ga)As cubic clusters were detected. Change of the layer strain from the compressive to tensile was related to the fraction of zinc blende and hexagonal inclusions. Thus the zinc blende inclusions introduce much larger strain than hexagonal ones. The explanation of observed thermal induced strain changes of the layers from the compressive to tensile is proposed. The magnetic properties of the samples were consistent with structural study results. Their showed that in sample containing solely cubic (Mn,Ga)As inclusions Mn ions inside the inclusions are still ferromagnetically coupled, even at room temperature. This fact can be explained by existence in these clusters of GaMnAs solid solution with content of Mn higher than 15 % as was found in theoretical calculations.
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Submitted 23 September, 2010; v1 submitted 22 April, 2010;
originally announced April 2010.
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Hybrid reciprocal space for X-ray diffraction in epitaxic layers
Authors:
Jarek Z. Domagala,
Sergio L. Morelhao
Abstract:
Even after several decades of systematic usage of X-ray diffraction as one of the major analytical tool for epitaxic layers, the vision of the reciprocal space of these materials is still a simple superposition of two reciprocal lattices, one from the substrate and another from the layer. In this work, the general theory accounting for hybrid reflections in the reciprocal space of layer/substrat…
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Even after several decades of systematic usage of X-ray diffraction as one of the major analytical tool for epitaxic layers, the vision of the reciprocal space of these materials is still a simple superposition of two reciprocal lattices, one from the substrate and another from the layer. In this work, the general theory accounting for hybrid reflections in the reciprocal space of layer/substrate systems is presented. It allows insight into the non-trivial geometry of such reciprocal space as well as into many of its interesting properties. Such properties can be further exploited even on conventional-source X-ray diffractometers, leading to alternative, very detailed, and comprehensive analysis of such materials.
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Submitted 16 May, 2007; v1 submitted 9 November, 2006;
originally announced November 2006.
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High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic capping
Authors:
J. Sadowski,
J. Z. Domagala,
V. Osinniy,
J. Kanski,
M. Adell,
L. Ilver,
C. Hernandez,
F. Terki,
S. Charar,
D. Maude
Abstract:
Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic capping at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn intersti…
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Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic capping at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn interstitials from GaMnAs volume.
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Submitted 29 January, 2006; v1 submitted 26 January, 2006;
originally announced January 2006.
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Solid phase epitaxy of ferromagnetic MnAs dots on GaMnAs layers
Authors:
J. Sadowski,
M. Adell,
J. Kanski,
L. Ilver,
E. Janik,
E. Lusakowska,
J. Z. Domagala,
R. Brucas,
M. Hanson
Abstract:
Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As capping. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnA…
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Formation of MnAs quantum dots in a regular ring-like distribution has been found on MBE-grown (GaMn)As surfaces after low-temperature annealing under As capping. The Mn was supplied by out-diffusing Mn interstitials from (GaMn)As. With 5 at% substitutional Mn the quantum dots appeared for (GaMn)As layers thicker than 500 A. For thinner layers the Mn-rich surfaces, presumably monolayer thick MnAs, are smooth and well-ordered (1x2), and are well suited for continued epitaxial growth.
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Submitted 4 April, 2005; v1 submitted 4 April, 2005;
originally announced April 2005.
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Post-growth annealing of GaMnAs under As capping - an alternative way to increase Tc
Authors:
M. Adell,
V. Stanciu,
J. Kanski,
L. Ilver,
J. Sadowski,
J. Z. Domagala,
P. Svedlindh,
F. Terki,
C. Hernandez,
S. Charar
Abstract:
We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier.
We demonstrate that in situ post-growth annealing of GaMnAs layers under As capping is adequate for achieving high Curie temperatures (Tc) in a similar way as ex situ annealing in air or in N2 atmosphere practiced earlier.
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Submitted 15 November, 2004; v1 submitted 24 June, 2004;
originally announced June 2004.
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Influence of defects on the lattice constant of GaMnAs
Authors:
J. Sadowski,
J. Z. Domagala
Abstract:
We study the influence of main compensating defects: As antisites and Mn interstitials, known to occur in GaMnAs ferromagnetic semiconductor, on its structural properties. Our experimental results show that there is a balance between Mn interstitial and As antisite defects, leading to the reduced density of one type of defect upon increased density of another defect. The significant differences…
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We study the influence of main compensating defects: As antisites and Mn interstitials, known to occur in GaMnAs ferromagnetic semiconductor, on its structural properties. Our experimental results show that there is a balance between Mn interstitial and As antisite defects, leading to the reduced density of one type of defect upon increased density of another defect. The significant differences in the lattice parameters of GaMnAs with the different balance between these two types of defects were observed. The annealing induced reduction of GaMnAs lattice constant is inhibited in the samples with large density of As antisites.
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Submitted 4 November, 2003; v1 submitted 1 September, 2003;
originally announced September 2003.
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The Effect of Mn Interstitials on the Lattice Parameter of Ga(1-x)Mn(x)As
Authors:
I. Kuryliszyn-Kudelska,
J. Z. Domagala,
T. Wojtowicz,
X. Liu,
E. Lusakowska,
W. Dobrowolski,
J. K. Furdyna
Abstract:
Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)As epilayers was carried out using high resolution X-ray diffraction (XRD) measurements for a wide range of Mn concentrations (0.027<=x<=0.083), with special attention on how the interstitial Mn atoms (Mn_I) influence the lattice parameter of this material. We observe a distinct decrease of the lattice parameter after low tempe…
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Structural investigation of as-grown as well as annealed Ga(1-x)Mn(x)As epilayers was carried out using high resolution X-ray diffraction (XRD) measurements for a wide range of Mn concentrations (0.027<=x<=0.083), with special attention on how the interstitial Mn atoms (Mn_I) influence the lattice parameter of this material. We observe a distinct decrease of the lattice parameter after low temperature annealing of Ga(1-x)Mn(x)As, which is known to reduce the Mn_I concentration. The reciprocal space maps measured for all the investigated samples showed that the Ga(1-x)Mn(x)As layers are fully strained - i.e., they remain pseudomorphic to the GaAs (001) substrate - for the entire thickness of the samples used (in the present case over 100 nm). In all cases studied the XRD measurements revealed high crystalline perfection of both as-grown as well as annealed Ga(1-x)Mn(x)As epilayers
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Submitted 18 July, 2003;
originally announced July 2003.
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Effect of annealing on magnetic and magnetotransport properties of Ga1-xMnxAs epilayers
Authors:
I. Kuryliszyn-Kudelska,
T. Wojtowicz,
X. Liu,
J. K. Furdyna,
W. Dobrowolski,
J. Z. Domagala,
E. Lusakowska,
M. Goiran,
E. Haanappel,
O. Portugall
Abstract:
High-field magnetic measurements performed with the use of magnetooptical Kerr effect (MOKE) in the polar configuration as well as high-field and low-field magnetotransport studies were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various conditions. The structural investigations by means of high resolution XRD were also per…
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High-field magnetic measurements performed with the use of magnetooptical Kerr effect (MOKE) in the polar configuration as well as high-field and low-field magnetotransport studies were carried out on Ga1-xMnxAs epilayers grown by low temperature molecular beam epitaxy, and subsequently annealed under various conditions. The structural investigations by means of high resolution XRD were also performed. We observe significant changes in magnetoresistivity curves, magnetization and strain introduced by the annealing.
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Submitted 28 April, 2003;
originally announced April 2003.
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Magnetic Properties of Short Period InGaMnAs/InGaAs Superlattices
Authors:
J. Sadowski,
R. Mathieu,
P. Svedlindh,
J. Kanski,
M. Karlsteen,
K. Swiatek,
J. Z. Domagala
Abstract:
We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12 Åor 24 Å). The nonmagnetic InGaAs spacer layers are 12 Åthick. The In content of InGaMnAs and InGaAs layers was chosen in such a way that magnetic layers were: deep poten…
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We have observed a paramagnetic-to-ferromagnetic phase transition in short period InGaMnAs/InGaAs superlattices. The thicknesses of magnetic InGaMnAs layers in the structures studied was chosen to be 4 or 8 molecular layers (12 Åor 24 Å). The nonmagnetic InGaAs spacer layers are 12 Åthick. The In content of InGaMnAs and InGaAs layers was chosen in such a way that magnetic layers were: deep potential wells, high potential barriers or shallow potential wells. For superlattices with 8 monolayer thick InGaMnAs magnetic layers and 4 monolayer thick InGaAs nonmagnetic spacers the temperatures of paramagnetic-to-ferromagnetic phase transition do not depend on the band offsets between InGaMnAs and InGaAs adjusted by the In content.
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Submitted 9 July, 2002;
originally announced July 2002.
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Structural and magnetic properties of GaMnAs layers with high Mn content grown by Migration Enhanced Epitaxy on GaAs(100) substrates
Authors:
J. Sadowski,
R. Mathieu,
P. Svedlindh,
J. Z. Domagala,
J. Bak - Misiuk,
K. Swiatek,
M. Karlsteen,
J. Kanski,
L. Ilver,
H. Asklund,
U. Sodervall
Abstract:
We have grown the ferromagnetic semiconductor GaMnAs containing up to 10% Mn by migration enhanced epitaxy at a substrate temperature of 150^oC. The alternate supply of As2 molecules and Ga and Mn atoms made it possible to grow single crystalline GaMnAs layers at very low substrate temperature, at which conventional molecular beam epitaxial growth under excess As supply is not possible due to As…
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We have grown the ferromagnetic semiconductor GaMnAs containing up to 10% Mn by migration enhanced epitaxy at a substrate temperature of 150^oC. The alternate supply of As2 molecules and Ga and Mn atoms made it possible to grow single crystalline GaMnAs layers at very low substrate temperature, at which conventional molecular beam epitaxial growth under excess As supply is not possible due to As condensation. Secondary ion mass spectroscopy and X-ray diffraction measurements confirmed a higher Mn content in the films grown by this method in comparison to the GaMnAs layers grown by low temperature molecular beam epitaxy. The lattice constant of hypothetical zinc-blende structure MnAs is determined to be 5.9 Å, which deviates somewhat from previously reported values. This deviation is ascribed to growth-condition dependent density of point defects. It is stressed that this effect must be taken into account for any assessment of Mn content from X-ray diffraction data.
Magnetization measurements showed an onset of ferromagnetic ordering around 75 K for the GaMnAs layer with 10% Mn. This means that the trend of falling Curie temperatures with increasing Mn concentrations above 5.5% is broken.
We tentatively assign this to the variation of the carrier concentration, including contributions from donor and acceptor centers formed by antisite defects and Mn doping, and increased density of magnetically active Mn ions.
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Submitted 6 March, 2001;
originally announced March 2001.
