Showing 1–4 of 4 results for author: Elangovan, H

Establishing quasi-linear quadrupole functional topology by oxygen-vacancy engineering at a ferroelectric domain wall

Authors: Hemaprabha Elangovan, Maya Barzilay, Jiawei Huang, Shi Liu, Shai Cohen, Yachin Ivry

Abstract: Oxygen vacancies in two-dimensional metal-oxide structures garner much attention due to unique conductive, magnetic and even superconductive functionalities they induce. Ferroelectric domain walls have been a prominent recent example because they serve as a hub for topological defects that enable unusual symmetries and are relevant for low-energy switching technologies. However, owing to the light… ▽ More Oxygen vacancies in two-dimensional metal-oxide structures garner much attention due to unique conductive, magnetic and even superconductive functionalities they induce. Ferroelectric domain walls have been a prominent recent example because they serve as a hub for topological defects that enable unusual symmetries and are relevant for low-energy switching technologies. However, owing to the light weight of oxygen atoms and localized effects of their vacancies, the atomic-scale electrical and mechanical influence of oxygen vacancies has remained elusive. Here, stable individual oxygen vacancies were found and engineered in situ at domain walls of seminal titanate perovskite ferroics. The atomic-scale strain, electric-field, charge and dipole-moment distribution around these vacancies were characterized by combining advanced transmission electron microscopy and first-principle methodologies. 3-5 % tensile strain was observed at the immediate surrounding unit cells of the vacancies. The dipole-moment distribution around the vacancy was found to be an alternating head-to-head $-$ tail-to-tail $-$ head-to-head structure, giving rise to a quasi-linear quadrupole topology. Reduction of the nearby Ti ion as well as enhanced charging and electric-field concentration near the vacancy confirmed the quadrupole structure and illustrated its local effects on the electrical and structural properties. Significant intra-band states were found in the unit cell of the vacancies, proposing a meaningful domain-wall conductivity. Oxygen-vacancy engineering and controllable quadrupoles that enable pre-determining both atomic-scale and global functional properties offer a promising platform of electro-mechanical topological solitons and device miniaturization in metal oxides. △ Less

Submitted 21 April, 2021; originally announced April 2021.

Polarization Origin of Photoconductivity in MAPbI3 Thin Films

Authors: Rohit Saraf, Cecile Saguy, Vivek Maheshwari, Hemaprabha Elangovan, Yachin Ivry

Abstract: Hybrid-halide perovskite (HHP) films exhibit exceptional photo-electric properties. These materials are utilized for highly efficient solar cells and photoconductive technologies. Both ion migration and polarization have been proposed as the source of enhanced photoelectric activity, but the exact origin of these advantageous device properties has remained elusive. Here, we combined microscale and… ▽ More Hybrid-halide perovskite (HHP) films exhibit exceptional photo-electric properties. These materials are utilized for highly efficient solar cells and photoconductive technologies. Both ion migration and polarization have been proposed as the source of enhanced photoelectric activity, but the exact origin of these advantageous device properties has remained elusive. Here, we combined microscale and device-scale characterization to demonstrate that polarization-assisted conductivity governs photoconductivity in thin HHP films. Conductive atomic force microscopy under light and variable temperature conditions showed that the photocurrent is directional and is suppressed at the tetragonal-to-cubic transformation. It was revealed that polarization-based conductivity is enhanced by light, whereas dark conductivity is dominated by non-directional ion migration, as was confirmed by large-scale device measurements. Following the non-volatile memory nature of polarization domains, photoconductive memristive behavior was demonstrated. Understanding the origin of photoelectric activity in HHP allows designing devices with enhanced functionality and lays the grounds for photoelectric memristive devices. △ Less

Submitted 5 July, 2020; originally announced July 2020.

Giant Superelastic Piezoelectricity in Flexible Ferroelectric $BaTiO_3$ Membranes

Authors: Hemaprabha Elangovan, Maya Barzilay, Sahar Seremi, Noy Cohen, Yizhe Jiang, Lane W. Martin, Yachin Ivry

Abstract: Mechanical displacement in commonly used piezoelectric materials is typically restricted to linear or biaxial in nature and to a few percent of the material dimensions. Here, we show that free-standing BaTiO$_3$ membranes exhibit non-conventional electromechanical coupling. Under an external electric field, these superelastic membranes undergo controllable and reversible 'sushi-rolling-like' 180… ▽ More Mechanical displacement in commonly used piezoelectric materials is typically restricted to linear or biaxial in nature and to a few percent of the material dimensions. Here, we show that free-standing BaTiO$_3$ membranes exhibit non-conventional electromechanical coupling. Under an external electric field, these superelastic membranes undergo controllable and reversible 'sushi-rolling-like' 180$^\circ$ folding-unfolding cycles. This crease-free folding is mediated by charged ferroelectric domains, leading to a giant > 3.8 and 4.6 $μ$m displacements for a 30-nm thick membrane at room temperature and 60$^\circ$C, respectively. Further increasing the electric field above the coercive value changes the fold curvature, hence augmenting the effective piezoresponse. Finally, it is found that the membranes fold with increasing temperature followed by complete immobility of the membrane above the Curie temperature, allowing us to model the ferroelectric-domain origin of the effect. △ Less

Submitted 4 April, 2020; v1 submitted 13 February, 2020; originally announced February 2020.

Surface nucleation of the paraelectric phase in ferroelectric BaTiO3: Atomic scale mapping

Authors: Maya Barzilay, Hemaprabha Elangovan, Yachin Ivry

Abstract: In ferroelectricity, atomic-scale dipole moments interact collectively to produce strong electro-mechanical coupling and switchable macroscopic polarization. Hence, the functionality of ferroelectrics emerges at a solid-solid phase transformation that is accompanied by a sudden disappearance of an inversion symmetry. Much effort has been put to understand the ferroelectric transition at the polari… ▽ More In ferroelectricity, atomic-scale dipole moments interact collectively to produce strong electro-mechanical coupling and switchable macroscopic polarization. Hence, the functionality of ferroelectrics emerges at a solid-solid phase transformation that is accompanied by a sudden disappearance of an inversion symmetry. Much effort has been put to understand the ferroelectric transition at the polarization length scale. Nevertheless, the dipole-moment origin of ferroelectricity has remained elusive. Here, we used variable-temperature high-resolution transmission electron microscopy to reveal the dipole-moment dynamics during the ferroelectric-to-paraelectric transition. We show that the transition occurs when paraelectric nuclei of the size of a couple of unit cells emerge near the surface. Upon heating, the cubic phase sidewalk grows towards the bulk. We quantified the nucleation barrier and show dominancy of mechanical interactions, helping us demonstrate similarities to predictions of domain nucleation during electric field switching. Our work motivates dynamic atomic-scale characterizations of solid-solid transitions in other materials. △ Less

Submitted 20 August, 2019; originally announced August 2019.