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Information Security and Privacy in the Digital World: Some Selected Topics
Authors:
Jaydip Sen,
Joceli Mayer,
Subhasis Dasgupta,
Subrata Nandi,
Srinivasan Krishnaswamy,
Pinaki Mitra,
Mahendra Pratap Singh,
Naga Prasanthi Kundeti,
Chandra Sekhara Rao MVP,
Sudha Sree Chekuri,
Seshu Babu Pallapothu,
Preethi Nanjundan,
Jossy P. George,
Abdelhadi El Allahi,
Ilham Morino,
Salma AIT Oussous,
Siham Beloualid,
Ahmed Tamtaoui,
Abderrahim Bajit
Abstract:
In the era of generative artificial intelligence and the Internet of Things, while there is explosive growth in the volume of data and the associated need for processing, analysis, and storage, several new challenges are faced in identifying spurious and fake information and protecting the privacy of sensitive data. This has led to an increasing demand for more robust and resilient schemes for aut…
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In the era of generative artificial intelligence and the Internet of Things, while there is explosive growth in the volume of data and the associated need for processing, analysis, and storage, several new challenges are faced in identifying spurious and fake information and protecting the privacy of sensitive data. This has led to an increasing demand for more robust and resilient schemes for authentication, integrity protection, encryption, non-repudiation, and privacy-preservation of data. The chapters in this book present some of the state-of-the-art research works in the field of cryptography and security in computing and communications.
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Submitted 29 March, 2024;
originally announced April 2024.
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Light modulation in Silicon photonics by PZT actuated acoustic waves
Authors:
Irfan Ansari,
John P. George,
Gilles F. Feutmba,
Tessa Van de Veire,
Awanish Pandey,
Jeroen Beeckman,
Dries Van Thourhout
Abstract:
Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that ranges from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead Zirconate Titanate (PZT) is a promising material due to its strong piezoelectri…
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Tailoring the interaction between light and sound has opened new possibilities in photonic integrated circuits (PICs) that ranges from achieving quantum control of light to high-speed information processing. However, the actuation of sound waves in Si PICs usually requires integration of a piezoelectric thin film. Lead Zirconate Titanate (PZT) is a promising material due to its strong piezoelectric and electromechanical coupling coefficient. Unfortunately, the traditional methods to grow PZT on Silicon are detrimental for photonic applications due to the presence of an optical lossy intermediate layer. In this work, we report integration of a high quality PZT thin film on a Silicon-on-insulator (SOI) photonic chip using an optically transparent buffer layer. We demonstrate acousto-optic modulation in Silicon waveguides with the PZT actuated acoustic waves. We fabricate inter digital transducers (IDTs) on the PZT film with a contact photo-lithography and electron-beam lithography to generate the acoustic waves in MHz and GHz range respectively. We obtain a V$_π$L $\sim$ 3.35 V$\cdot$cm at 576 MHz from a 350 nm thick gold (Au) IDT with 20 finger-pairs. After taking the effect of mass-loading and grating reflection into account, we measured a V$_π$L $\sim$ 3.60 V$\cdot$cm at 2 GHz from a 100 nm thick Aluminum (Al) IDT consisting of only 4 finger-pairs. Thus, without patterning the PZT film nor suspending the device, we obtained figures-of-merit comparable to state-of-the-art modulators based on SOI, making it a promising candidate for broadband and efficient acousto-optic modulator for future integration.
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Submitted 22 May, 2022; v1 submitted 15 December, 2021;
originally announced December 2021.
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Nanophotonic Pockels modulators on a silicon nitride platform
Authors:
Koen Alexander,
John P. George,
Jochem Verbist,
Kristiaan Neyts,
Bart Kuyken,
Dries Van Thourhout,
Jeroen Beeckman
Abstract:
Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead…
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Silicon nitride (SiN) is emerging as a competitive platform for CMOS-compatible integrated photonics. However, active devices such as modulators are scarce and still lack in performance. Ideally, such a modulator should have a high bandwidth, good modulation efficiency, low loss, and cover a wide wavelength range. Here, we demonstrate the first electro-optic modulators based on ferroelectric lead zirconate titanate (PZT) films on SiN, in both the O- and the C-band. Bias-free operation, bandwidths beyond 33 GHz and data rates of 40 Gbps are shown, as well as low propagation losses ($α\approx 1$ dB/cm). A $V_πL\approx$ 3.2 Vcm is measured. Simulations indicate that values below 2 Vcm are achievable. This approach offers a much-anticipated route towards high-performance phase modulators on SiN.
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Submitted 13 June, 2018; v1 submitted 7 May, 2018;
originally announced May 2018.