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Strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell for energy-efficient Processing in Memory
Authors:
Md Golam Morshed,
Hamed Vakili,
Mohammad Nazmus Sakib,
Samiran Ganguly,
Mircea R. Stan,
Avik W. Ghosh
Abstract:
We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages the TI's high charge-to-spin conversion efficiency coupled with the piezo-induced strain-based gating mechanism for low-power in-memory computing. The piezo-in…
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We present a novel design of a strained topological insulator spin-orbit torque random access memory (STI-SOTRAM) bit cell comprising a piezoelectric/magnet (gating)/topological insulator (TI)/magnet (storage) heterostructure that leverages the TI's high charge-to-spin conversion efficiency coupled with the piezo-induced strain-based gating mechanism for low-power in-memory computing. The piezo-induced strain effectively modulates the conductivity of the topological surface state (TSS) by altering the gating magnet's magnetization from out-to-in-plane, facilitating the storage magnet's spin-orbit torque (SOT) switching. Through comprehensive coupled stochastic Landau-Lifshitz-Gilbert (LLG) simulations, we explore the device dynamics, anisotropy-stress phase space for switching, and write conditions and demonstrate a significant reduction in energy dissipation compared to conventional heavy metal (HM)-based SOT switching. Additionally, we project the energy consumption for in-memory Boolean operations (AND and OR). Our findings suggest the promise of the STI-SOTRAM for low-power, high-performance edge computing.
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Submitted 30 July, 2024;
originally announced July 2024.
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Reduced sensitivity to process, voltage and temperature variations in activated perpendicular magnetic tunnel junctions based stochastic devices
Authors:
Md Golam Morshed,
Laura Rehm,
Ankit Shukla,
Yunkun Xie,
Samiran Ganguly,
Shaloo Rakheja,
Andrew D. Kent,
Avik W. Ghosh
Abstract:
True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions (pMTJs) based on low-barrier magnets (LBMs) are natural sources of TRNGs, they tend to suffer from device-to-device variability, low speed, and temperature sensi…
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True random number generators (TRNGs) are fundamental building blocks for many applications, such as cryptography, Monte Carlo simulations, neuromorphic computing, and probabilistic computing. While perpendicular magnetic tunnel junctions (pMTJs) based on low-barrier magnets (LBMs) are natural sources of TRNGs, they tend to suffer from device-to-device variability, low speed, and temperature sensitivity. Instead, medium-barrier magnets (MBMs) operated with nanosecond pulses - denoted, stochastic magnetic actuated random transducer (SMART) devices - are potentially superior candidates for such applications. We present a systematic analysis of spin-torque-driven switching of MBM-based pMTJs (Eb ~ 20 - 40 kBT) as a function of pulse duration (1 ps to 1 ms), by numerically solving their macrospin dynamics using a 1-D Fokker-Planck equation. We investigate the impact of voltage, temperature, and process variations (MTJ dimensions and material parameters) on the switching probability of the device. Our findings indicate SMART devices activated by short-duration pulses (< 1 ns) are much less sensitive to process-voltage-temperature (PVT) variations while consuming lower energy (~ fJ) than the same devices operated with longer pulses. Our results show a path toward building fast, energy-efficient, and robust TRNG hardware units for solving optimization problems.
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Submitted 28 October, 2023;
originally announced October 2023.
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Temperature-Resilient True Random Number Generation with Stochastic Actuated Magnetic Tunnel Junction Devices
Authors:
Laura Rehm,
Md Golam Morshed,
Shashank Misra,
Ankit Shukla,
Shaloo Rakheja,
Mustafa Pinarbasi,
Avik W. Ghosh,
Andrew D. Kent
Abstract:
Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by nanosecond pulses can generate true random numbers at high data rates. Here, we explore the dependence of probability bias-the deviations from equal probability (50/50)…
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Nanoscale magnetic tunnel junction (MTJ) devices can efficiently convert thermal energy in the environment into random bitstreams for computational modeling and cryptography. We recently showed that perpendicular MTJs activated by nanosecond pulses can generate true random numbers at high data rates. Here, we explore the dependence of probability bias-the deviations from equal probability (50/50) 0/1 bit outcomes-of such devices on temperature, pulse amplitude, and duration. Our experimental results and device model demonstrate that operation with nanosecond pulses in the ballistic limit minimizes variation of probability bias with temperature to be far lower than that of devices operated with longer-duration pulses. Further, operation in the short-pulse limit reduces the bias variation with pulse amplitude while rendering the device more sensitive to pulse duration. These results are significant for designing TRNG MTJ circuits and establishing operating conditions.
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Submitted 8 November, 2023; v1 submitted 28 October, 2023;
originally announced October 2023.
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Phase Change Induced Magnetic Switching through Metal-insulator Transition in VO2/TbFeCo Films
Authors:
Chung T. Ma,
Salinporn Kittiwatnakul,
Apiprach Sittipongpittaya,
Yuhan Wang,
Md Golam Morshed,
Avik W. Ghosh,
S. Joseph Poon
Abstract:
The ability to manipulate spins in magnetic materials is essential in designing spintronics devices. One method for magnetic switching is through strain. In VO2 on TiO2 thin films, while VO2 remains rutile across the metal-insulator transition, the in-plane lattice area expands going from low temperature insulating phase to high temperature conducting phase. In a VO2/TbFeCo bilayer, the expansion…
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The ability to manipulate spins in magnetic materials is essential in designing spintronics devices. One method for magnetic switching is through strain. In VO2 on TiO2 thin films, while VO2 remains rutile across the metal-insulator transition, the in-plane lattice area expands going from low temperature insulating phase to high temperature conducting phase. In a VO2/TbFeCo bilayer, the expansion of the VO2 lattice area exerts tension on the amorphous TbFeCo layer. Through the strain effect, magnetic properties, including the magnetic anisotropy and magnetization, of TbFeCo can be changed. In this work, the changes in magnetic properties of TbFeCo on VO2/TiO2(011) are demonstrated using anomalous Hall effect measurements. Across the metal-insulator transition, TbFeCo loses perpendicular magnetic anisotropy, and the magnetization in TbFeCo turns from out-of-plane to in-plane. Using atomistic simulations, we confirm these tunable magnetic properties originating from the metal-insulator transition of VO2. This study provides the groundwork for controlling magnetic properties through a phase transition.
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Submitted 25 October, 2023;
originally announced October 2023.
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A True Random Number Generator for Probabilistic Computing using Stochastic Magnetic Actuated Random Transducer Devices
Authors:
Ankit Shukla,
Laura Heller,
Md Golam Morshed,
Laura Rehm,
Avik W. Ghosh,
Andrew D. Kent,
Shaloo Rakheja
Abstract:
Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements. MTJs with high-barrier magnets (HBMs) have been used to generate random bitstreams with $\lesssim$ 200~Mb/s throughput and pJ/bit energy consumption. A high temper…
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Magnetic tunnel junctions (MTJs), which are the fundamental building blocks of spintronic devices, have been used to build true random number generators (TRNGs) with different trade-offs between throughput, power, and area requirements. MTJs with high-barrier magnets (HBMs) have been used to generate random bitstreams with $\lesssim$ 200~Mb/s throughput and pJ/bit energy consumption. A high temperature sensitivity, however, adversely affects their performance as a TRNG. Superparamagnetic MTJs employing low-barrier magnets (LBMs) have also been used for TRNG operation. Although LBM-based MTJs can operate at low energy, they suffer from slow dynamics, sensitivity to process variations, and low fabrication yield. In this paper, we model a TRNG based on medium-barrier magnets (MBMs) with perpendicular magnetic anisotropy. The proposed MBM-based TRNG is driven with short voltage pulses to induce ballistic, yet stochastic, magnetization switching. We show that the proposed TRNG can operate at frequencies of about 500~MHz while consuming less than 100~fJ/bit of energy. In the short-pulse ballistic limit, the switching probability of our device shows robustness to variations in temperature and material parameters relative to LBMs and HBMs. Our results suggest that MBM-based MTJs are suitable candidates for building fast and energy-efficient TRNG hardware units for probabilistic computing.
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Submitted 18 April, 2023;
originally announced April 2023.
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A simplified drift-diffusion model for pandemic propagation
Authors:
Clara Bender,
Abhimanyu Ghosh,
Hamed Vakili,
Preetam Ghosh,
Avik W. Ghosh
Abstract:
Predicting Pandemic evolution involves complex modeling challenges, often requiring detailed discrete mathematics executed on large volumes of epidemiological data. Differential equations have the advantage of offering smooth, well-behaved solutions that try to capture overall predictive trends and averages. We further simplify one of those equations, the SIR model, by offering quasi-analytical so…
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Predicting Pandemic evolution involves complex modeling challenges, often requiring detailed discrete mathematics executed on large volumes of epidemiological data. Differential equations have the advantage of offering smooth, well-behaved solutions that try to capture overall predictive trends and averages. We further simplify one of those equations, the SIR model, by offering quasi-analytical solutions and fitting functions that agree well with the numerics, as well as COVID-19 data across a few countries. The equations provide an elegant way to visualize the evolution, by mapping onto the dynamics of an overdamped classical particle moving in the SIR configuration space, drifting down gradient of a potential whose shape is set by the model and parameters in hand. We discuss potential sources of errors in our analysis and their growth over time, and map those uncertainties into a diffusive jitter that tends to push the particle away from its minimum. The combined physical understanding and analytical expressions offered by such an intuitive drift-diffusion model could be particularly useful in making policy decisions going forward.
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Submitted 26 February, 2023;
originally announced February 2023.
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A Deep Dive into the Computational Fidelity of High Variability Low Energy Barrier Magnet Technology for Accelerating Optimization and Bayesian Problems
Authors:
Md Golam Morshed,
Samiran Ganguly,
Avik W. Ghosh
Abstract:
Low energy barrier magnet (LBM) technology has recently been proposed as a candidate for accelerating algorithms based on energy minimization and probabilistic graphs because their physical characteristics have a one-to-one mapping onto the primitives of these algorithms. Many of these algorithms have a much higher tolerance for error compared to high-accuracy numerical computation. LBM, however,…
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Low energy barrier magnet (LBM) technology has recently been proposed as a candidate for accelerating algorithms based on energy minimization and probabilistic graphs because their physical characteristics have a one-to-one mapping onto the primitives of these algorithms. Many of these algorithms have a much higher tolerance for error compared to high-accuracy numerical computation. LBM, however, is a nascent technology, and devices show high sample-to-sample variability. In this work, we take a deep dive into the overall fidelity afforded by this technology in providing computational primitives for these algorithms. We show that while the compute results show finite deviations from zero variability devices, the margin of error is almost always certifiable to a certain percentage. This suggests that LBM technology could be a viable candidate as an accelerator for popular emerging paradigms of computing.
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Submitted 15 February, 2023;
originally announced February 2023.
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Choose your tools carefully: A Comparative Evaluation of Deterministic vs. Stochastic and Binary vs. Analog Neuron models for Implementing Emerging Computing Paradigms
Authors:
Md Golam Morshed,
Samiran Ganguly,
Avik W. Ghosh
Abstract:
Neuromorphic computing, commonly understood as a computing approach built upon neurons, synapses, and their dynamics, as opposed to Boolean gates, is gaining large mindshare due to its direct application in solving current and future computing technological problems, such as smart sensing, smart devices, self-hosted and self-contained devices, artificial intelligence (AI) applications, etc. In a l…
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Neuromorphic computing, commonly understood as a computing approach built upon neurons, synapses, and their dynamics, as opposed to Boolean gates, is gaining large mindshare due to its direct application in solving current and future computing technological problems, such as smart sensing, smart devices, self-hosted and self-contained devices, artificial intelligence (AI) applications, etc. In a largely software-defined implementation of neuromorphic computing, it is possible to throw enormous computational power or optimize models and networks depending on the specific nature of the computational tasks. However, a hardware-based approach needs the identification of well-suited neuronal and synaptic models to obtain high functional and energy efficiency, which is a prime concern in size, weight, and power (SWaP) constrained environments. In this work, we perform a study on the characteristics of hardware neuron models (namely, inference errors, generalizability and robustness, practical implementability, and memory capacity) that have been proposed and demonstrated using a plethora of emerging nano-materials technology-based physical devices, to quantify the performance of such neurons on certain classes of problems that are of great importance in real-time signal processing like tasks in the context of reservoir computing. We find that the answer on which neuron to use for what applications depends on the particulars of the application requirements and constraints themselves, i.e., we need not only a hammer but all sorts of tools in our tool chest for high efficiency and quality neuromorphic computing.
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Submitted 5 May, 2023; v1 submitted 10 February, 2023;
originally announced February 2023.
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Roadmap for Unconventional Computing with Nanotechnology
Authors:
Giovanni Finocchio,
Jean Anne C. Incorvia,
Joseph S. Friedman,
Qu Yang,
Anna Giordano,
Julie Grollier,
Hyunsoo Yang,
Florin Ciubotaru,
Andrii Chumak,
Azad J. Naeemi,
Sorin D. Cotofana,
Riccardo Tomasello,
Christos Panagopoulos,
Mario Carpentieri,
Peng Lin,
Gang Pan,
J. Joshua Yang,
Aida Todri-Sanial,
Gabriele Boschetto,
Kremena Makasheva,
Vinod K. Sangwan,
Amit Ranjan Trivedi,
Mark C. Hersam,
Kerem Y. Camsari,
Peter L. McMahon
, et al. (26 additional authors not shown)
Abstract:
In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing w…
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In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing with nanotechnologies to guide future research, and this collection aims to fill that need. The authors provide a comprehensive roadmap for neuromorphic computing using electron spins, memristive devices, two-dimensional nanomaterials, nanomagnets, and various dynamical systems. They also address other paradigms such as Ising machines, Bayesian inference engines, probabilistic computing with p-bits, processing in memory, quantum memories and algorithms, computing with skyrmions and spin waves, and brain-inspired computing for incremental learning and problem-solving in severely resource-constrained environments. These approaches have advantages over traditional Boolean computing based on von Neumann architecture. As the computational requirements for artificial intelligence grow 50 times faster than Moore's Law for electronics, more unconventional approaches to computing and signal processing will appear on the horizon, and this roadmap will help identify future needs and challenges. In a very fertile field, experts in the field aim to present some of the dominant and most promising technologies for unconventional computing that will be around for some time to come. Within a holistic approach, the goal is to provide pathways for solidifying the field and guiding future impactful discoveries.
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Submitted 27 February, 2024; v1 submitted 17 January, 2023;
originally announced January 2023.
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Direct evidence of Klein-antiKlein tunneling of graphitic electrons in a Corbino geometry
Authors:
Mirza M. Elahi,
Yihang Zeng,
Cory R. Dean,
Avik W. Ghosh
Abstract:
Transport measurement of electron optics in monolayer graphene p-n junction devices has been traditionally studied with negative refraction and chiral transmission experiments in Hallbar magnetic focusing set-ups. We show direct signatures of Klein (monolayer) and anti-Klein (bilayer) tunneling with a circular 'edgeless' Corbino geometry made out of gated graphene p-n junctions. Noticeable in part…
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Transport measurement of electron optics in monolayer graphene p-n junction devices has been traditionally studied with negative refraction and chiral transmission experiments in Hallbar magnetic focusing set-ups. We show direct signatures of Klein (monolayer) and anti-Klein (bilayer) tunneling with a circular 'edgeless' Corbino geometry made out of gated graphene p-n junctions. Noticeable in particular is the appearance of angular sweet spots (Brewster angles) in the magnetoconductance data of bilayer graphene, which minimizes head-on transmission, contrary to conventional Fresnel optics or monolayer graphene which shows instead a sharpened collimation of transmission paths. The local maxima on the bilayer magnetoconductance plots migrate to higher fields with increasing doping density. These experimental results are in good agreement with detailed numerical simulations and analytical predictions.
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Submitted 19 October, 2022;
originally announced October 2022.
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Dynamical system-based computational models for solving combinatorial optimization on hypergraphs
Authors:
Mohammad Khairul Bashar,
Antik Mallick,
Avik W. Ghosh,
Nikhil Shukla
Abstract:
The intrinsic energy minimization in dynamical systems offers a valuable tool for minimizing the objective functions of computationally challenging problems in combinatorial optimization. However, most prior works have focused on mapping such dynamics to combinatorial optimization problems whose objective functions have quadratic degree (e.g., MaxCut); such problems can be represented and analyzed…
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The intrinsic energy minimization in dynamical systems offers a valuable tool for minimizing the objective functions of computationally challenging problems in combinatorial optimization. However, most prior works have focused on mapping such dynamics to combinatorial optimization problems whose objective functions have quadratic degree (e.g., MaxCut); such problems can be represented and analyzed using graphs. However, the work on developing such models for problems that need objective functions with degree greater than two, and subsequently, entail the use of hypergraph data structures, is relatively sparse. In this work, we develop dynamical system-inspired computational models for several such problems. Specifically, we define the 'energy function' for hypergraph-based combinatorial problems ranging from Boolean SAT and its variants to integer factorization, and subsequently, define the resulting system dynamics. We also show that the design approach is applicable to optimization problems with quadratic degree, and use it develop a new dynamical system formulation for minimizing the Ising Hamiltonian. Our work not only expands on the scope of problems that can be directly mapped to, and solved using physics-inspired models, but also creates new opportunities to design high-performance accelerators for solving combinatorial optimization.
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Submitted 19 July, 2022;
originally announced July 2022.
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Low power In Memory Computation with Reciprocal Ferromagnet/Topological Insulator Heterostructures
Authors:
Hamed Vakili,
Samiran Ganguly,
George J. de Coster,
Mahesh R. Neupane,
Avik W. Ghosh
Abstract:
The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane, can turn on and off the TI surface current. The gate tunability…
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The surface state of a 3D topological insulator (3DTI) is a spin-momentum locked conductive state, whose large spin hall angle can be used for the energy-efficient spin orbit torque based switching of an overlying ferromagnet (FM). Conversely, the gated switching of the magnetization of a separate FM in or out of the TI surface plane, can turn on and off the TI surface current. The gate tunability of the TI Dirac cone gap helps reduce its sub-threshold swing. By exploiting this reciprocal behaviour, we can use two FM/3DTI heterostructures to design a 1-Transistor 1-magnetic tunnel junction random access memory unit (1T1MTJ RAM) for an ultra low power Processing-in-Memory (PiM) architecture. Our calculation involves combining the Fokker-Planck equation with the Non-equilibrium Green Function (NEGF) based flow of conduction electrons and Landau-Lifshitz-Gilbert (LLG) based dynamics of magnetization. Our combined approach allows us to connect device performance metrics with underlying material parameters, which can guide proposed experimental and fabrication efforts.
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Submitted 18 December, 2022; v1 submitted 27 March, 2022;
originally announced March 2022.
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Biaxial Strain Modulated Valence Band Engineering in III-V Digital Alloys
Authors:
Sheikh Z. Ahmed,
Yaohua Tan,
Jiyuan Zheng,
Joe C. Campbell,
Avik W. Ghosh
Abstract:
Some III-V digital alloy avalanche photodiodes exhibit low excess noise. These alloys have low hole ionization coefficients due to presence of small 'minigaps', enhanced effective mass and large separation between light-hole and split-off bands in the valence band. In this letter, an explanation for the formation of the minigaps using a tight binding picture is provided. Furthermore, we demonstrat…
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Some III-V digital alloy avalanche photodiodes exhibit low excess noise. These alloys have low hole ionization coefficients due to presence of small 'minigaps', enhanced effective mass and large separation between light-hole and split-off bands in the valence band. In this letter, an explanation for the formation of the minigaps using a tight binding picture is provided. Furthermore, we demonstrate that decreasing substrate lattice constant can increase the minigap size and mass in the transport direction. This leads to reduced quantum tunneling and phonon scattering of the holes. Finally, we illustrate the band structure modification with substrate lattice constant for other III-V digital alloys.
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Submitted 7 November, 2021;
originally announced November 2021.
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Positional stability of skyrmions in a racetrack memory with notched geometry
Authors:
Md Golam Morshed,
Hamed Vakili,
Avik W. Ghosh
Abstract:
Magnetic skyrmions are chiral spin textures with attractive features, such as ultra-small size, solitonic nature, and easy mobility with small electrical currents that make them promising as information-carrying bits in low-power high-density memory, and logic applications. However, it is essential to guarantee the positional stability of skyrmions for reliable information extraction. Using microm…
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Magnetic skyrmions are chiral spin textures with attractive features, such as ultra-small size, solitonic nature, and easy mobility with small electrical currents that make them promising as information-carrying bits in low-power high-density memory, and logic applications. However, it is essential to guarantee the positional stability of skyrmions for reliable information extraction. Using micromagnetic simulations for the minimum energy path (MEP), we compute the energy barriers associated with stabilizing notches along a racetrack. We vary material parameters, specifically, the strength of the chiral Dzyaloshinskii-Moriya interactions (DMI), the notch geometry, and the thickness of the racetrack to get the optimal barrier height. We find that the reduction of skyrmion size as it squeezes past the notch gives rise to the energy barrier. We find a range of energy barriers up to ~ 45 kBT for a racetrack of 5 nm thickness that can provide years long positional lifetime of skyrmions for long-term memory applications while requiring a moderate amount of current (~ 10^10 A/m2) to move the skyrmions. Furthermore, we derive quasi-analytical equations to estimate the energy barrier. We also explore other pinning mechanisms, such as a local variation of material parameters in a region, and find that notched geometry provides the highest energy barrier. Our results open up possibilities to design practical skyrmion-based racetrack geometries for spintronics applications.
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Submitted 27 December, 2021; v1 submitted 26 October, 2021;
originally announced October 2021.
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Anatomy of nanomagnetic switching at a 3D Topological Insulator PN junction
Authors:
Hamed Vakili,
Yunkun Xie,
Samiran Ganguly,
Avik W. Ghosh
Abstract:
A P-N junction engineered within a Dirac cone system acts as a gate tunable angular filter based on Klein tunneling. For a 3D topological insulator with substantial bandgap, such a filter can produce a charge-to-spin conversion due to the dual effects of spin-momentum locking and momentum filtering. We analyze how spins filtered at an in-plane topological insulator PN junction (TIPNJ) interact wit…
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A P-N junction engineered within a Dirac cone system acts as a gate tunable angular filter based on Klein tunneling. For a 3D topological insulator with substantial bandgap, such a filter can produce a charge-to-spin conversion due to the dual effects of spin-momentum locking and momentum filtering. We analyze how spins filtered at an in-plane topological insulator PN junction (TIPNJ) interact with a nanomagnet, and argue that the intrinsic charge-to-spin conversion does not translate to an external gain if the nanomagnet also acts as the source contact. Regardless of the nanomagnet's position, the spin torque generated on the TIPNJ is limited by the surface current density, which in turn is limited by bulk band gap. {Using quantum kinetic models, we calculate the spatially varying spin potential and quantify the localization of the current vs applied bias}. Additionally, with the magnetodynamic simulation of a soft nanomagnet, we show that the PN junction can offer a critical gate tunability in the switching probability of the nanomagnet, with potential applications in probabilistic neuromorphic computing.
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Submitted 19 November, 2021; v1 submitted 6 October, 2021;
originally announced October 2021.
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Atomistic transport modeling, design principles and empirical rules for Low Noise III-V Digital Alloy Avalanche Photodiodes
Authors:
Sheikh Z. Ahmed,
Yaohua Tan,
Jiyuan Zheng,
Joe C. Campbell,
Avik W. Ghosh
Abstract:
A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environment-dependent atomistic tight binding description of short period superlattices, we argue that a combination of increased effective mass, minigaps and band split-off are primarily responsible for the observed superior perf…
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A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environment-dependent atomistic tight binding description of short period superlattices, we argue that a combination of increased effective mass, minigaps and band split-off are primarily responsible for the observed superior performance. These properties significantly limit the ionization rate of one carrier type, either holes or electrons, making the avalanche multiplication process unipolar in nature. The unipolar behavior in turn reduces the stochasticity of the multiplication gain. The effects of band folding on carrier transport are studied using the Non-Equilibrium Green's Function Method that accounts for quantum tunneling, and Boltzmann Transport Equation model for scattering. It is shown here that carrier transport by intraband tunneling and optical phonon scattering are reduced in materials with low excess noise. Based on our calculations, we propose five simple inequalities that can be used to approximately evaluate the suitability of digital alloys for designing low noise photodetectors. We evaluate the performance of multiple digital alloys using these criteria and demonstrate their validity.
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Submitted 5 September, 2021;
originally announced September 2021.
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Characterization of band offsets in Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ alloys with varying Al composition
Authors:
Jiyuan Zheng,
Andrew H. Jones,
Yaohua Tan,
Ann K. Rockwell,
Stephen March,
Sheikh Z. Ahmed,
Catherine A. Dukes,
Avik W. Ghosh,
Seth R. Bank,
Joe C. Campbell
Abstract:
The unprecedented wide bandgap tunability (~1 eV) of Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in AlxIn1-xAsySb1-y with different Al compositions are analyzed by tight-binding calculations and X-ray photoelectron spectroscopy (XPS) measurements. Th…
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The unprecedented wide bandgap tunability (~1 eV) of Al$_x$In$_{1-x}$As$_y$Sb$_{1-y}$ latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near-infrared to mid-infrared. In this paper, the valence band-offsets in AlxIn1-xAsySb1-y with different Al compositions are analyzed by tight-binding calculations and X-ray photoelectron spectroscopy (XPS) measurements. The observed weak variation in valence band offsets is consistent with the lack of any minigaps in the valence band, compared to the conduction band.
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Submitted 27 May, 2021;
originally announced May 2021.
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Full band Monte Carlo simulation of AlInAsSb digital alloys
Authors:
Jiyuan Zheng,
Sheikh Z. Ahmed,
Yuan Yuan,
Andrew Jones,
Yaohua Tan,
Ann K. Rockwell,
Stephen D. March,
Seth R. Bank,
Avik W. Ghosh,
Joe C. Campbell
Abstract:
Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence impact ionization. Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization. Good agreemen…
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Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence impact ionization. Band-structures calculated using an empirical tight-binding method and Monte Carlo simulations reveal that the mini-gaps in the conduction band do not inhibit electron impact ionization. Good agreement between the full band Monte Carlo simulations and measured noise characteristics is demonstrated.
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Submitted 27 May, 2021;
originally announced May 2021.
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A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes
Authors:
Sheikh Z. Ahmed,
Samiran Ganguly,
Yuan Yuan,
Jiyuan Zheng,
Yaohua Tan,
Joe C. Campbell,
Avik W. Ghosh
Abstract:
III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a physics-based SPICE compatible compact model for APDs built from parameters extracted from an Environment-Dependent Tight Binding (EDTB) model calibr…
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III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a physics-based SPICE compatible compact model for APDs built from parameters extracted from an Environment-Dependent Tight Binding (EDTB) model calibrated to ab-initio Density Functional Theory (DFT) and Monte Carlo (MC) methods. Using this approach, we can accurately capture the physical characteristics of these APDs in integrated photonics circuit simulations.
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Submitted 9 February, 2021;
originally announced February 2021.
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Computing and Memory Technologies based on Magnetic Skyrmions
Authors:
Hamed Vakili,
Wei Zhou,
Chung T Ma,
Md Golam Morshed,
Mohammad Nazmus Sakib,
Tim Hartnett,
Jun-Wen Xu,
Samiran Ganguly,
Kai Litzius,
Yassine Quessab,
Prasanna Balachandran,
Mircea Stan,
S J Poon,
Andrew D. Kent,
Geoffrey Beach,
Avik W. Ghosh
Abstract:
Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast,all-electronic, low-energy devices, which is the basis for the emerging area of skyrmionics. The topological winding of skyrmion spins affects their overall lifetime, energetics and dynamical behavior. In this review, we discuss skyrmionics in the context of…
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Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast,all-electronic, low-energy devices, which is the basis for the emerging area of skyrmionics. The topological winding of skyrmion spins affects their overall lifetime, energetics and dynamical behavior. In this review, we discuss skyrmionics in the context of the present day solid state memory landscape, and show how their size, stability and mobility can be controlled by material engineering, as well as how they can be nucleated and detected. Ferrimagnetsnear their compensation points are important candidates for this application, leading to detailed exploration of amorphous CoGd as well as the study of emergent materials such as Mn$_4$N and Inverse Heusler alloys. Along with material properties, geometrical parameters such as film thickness, defect density and notches can be used to tune skyrmion properties, such as their size and stability. Topology, however, can be a double-edged sword, especially for isolated metastable skyrmions, as it brings stability at the cost of additional damping and deflective Magnus forces compared to domain walls. Skyrmion deformation in response to forces also makes them intrinsically slower than domain walls. We explore potential analog applications of skyrmions, including temporal memory at low density, and decorrelator for stochastic computing at a higher density that capitalizes on their interactions. We summarize the main challenges to achieve a skyrmionics technology, including maintaining positional stability with very high accuracy, electrical readout, especially for small ferrimagnetic skyrmions, deterministic nucleation and annihilation, and overall integration with digital circuits with the associated circuit overhead.
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Submitted 3 June, 2021; v1 submitted 25 January, 2021;
originally announced January 2021.
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Tuning Dzyaloshinskii-Moriya Interaction in Ferrimagnetic GdCo: A First Principles Approach
Authors:
Md Golam Morshed,
Khoong Hong Khoo,
Yassine Quessab,
Jun-Wen Xu,
Robert Laskowski,
Prasanna V. Balachandran,
Andrew D. Kent,
Avik W. Ghosh
Abstract:
We present a systematic analysis of our ability to tune chiral Dzyaloshinskii-Moriya Interactions (DMI) in compensated ferrimagnetic Pt/GdCo/Pt1-xWx trilayers by cap layer composition. Using first principles calculations, we show that the DMI increases rapidly for only ~ 10% W and saturates thereafter, in agreement with experiments. The calculated DMI shows a spread in values around the experiment…
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We present a systematic analysis of our ability to tune chiral Dzyaloshinskii-Moriya Interactions (DMI) in compensated ferrimagnetic Pt/GdCo/Pt1-xWx trilayers by cap layer composition. Using first principles calculations, we show that the DMI increases rapidly for only ~ 10% W and saturates thereafter, in agreement with experiments. The calculated DMI shows a spread in values around the experimental mean, depending on the atomic configuration of the cap layer interface. The saturation is attributed to the vanishing of spin orbit coupling energy at the cap layer and the simultaneous constancy at the bottom interface. Additionally, we predict the DMI in Pt/GdCo/X (X=Ta, W, Ir) and find that W in the cap layer favors a higher DMI than Ta and Ir that can be attributed to the difference in d-band alignment around the Fermi level. Our results open up exciting combinatorial possibilities for controlling the DMI in ferrimagnets towards nucleating and manipulating ultrasmall high-speed skyrmions.
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Submitted 9 January, 2021;
originally announced January 2021.
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Building Reservoir Computing Hardware Using Low Energy-Barrier Magnetics
Authors:
Samiran Ganguly,
Avik W. Ghosh
Abstract:
Biologically inspired recurrent neural networks, such as reservoir computers are of interest in designing spatio-temporal data processors from a hardware point of view due to the simple learning scheme and deep connections to Kalman filters. In this work we discuss using in-depth simulation studies a way to construct hardware reservoir computers using an analog stochastic neuron cell built from a…
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Biologically inspired recurrent neural networks, such as reservoir computers are of interest in designing spatio-temporal data processors from a hardware point of view due to the simple learning scheme and deep connections to Kalman filters. In this work we discuss using in-depth simulation studies a way to construct hardware reservoir computers using an analog stochastic neuron cell built from a low energy-barrier magnet based magnetic tunnel junction and a few transistors. This allows us to implement a physical embodiment of the mathematical model of reservoir computers. Compact implementation of reservoir computers using such devices may enable building compact, energy-efficient signal processors for standalone or in-situ machine cognition in edge devices.
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Submitted 6 July, 2020;
originally announced July 2020.
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Extrinsic Voltage Control of Carrier Lifetime in Polycrystalline PbSe Mid-wave IR Photo Detectors for Increased Detectivity
Authors:
Samiran Ganguly,
Tang Xin,
Sung-Shik Yoo,
Philippe Guyot-Sionnest,
Avik W. Ghosh
Abstract:
Polycrystalline PbSe for mid-wave IR (MWIR) photodetector is an attractive material option due to high operating/ambient temperature operation and relatively easy and cheap fabrication process, making it candidate for low-power and small footprint applications such as internet-of-thing (IoT) sensors and deployment on mobile platforms due to reduced/removed active cooling requirements. However, the…
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Polycrystalline PbSe for mid-wave IR (MWIR) photodetector is an attractive material option due to high operating/ambient temperature operation and relatively easy and cheap fabrication process, making it candidate for low-power and small footprint applications such as internet-of-thing (IoT) sensors and deployment on mobile platforms due to reduced/removed active cooling requirements. However, there are many material challenges that reduce the detectivity of these detectors. In this work, we demonstrate that it is possible to improve upon this metric by externally modulating the lifetime of conducting carriers by application of a back-gate voltage that can control the recombination rate of generated carrier. We first describe the physics of $PbSe$ detectors, the mechanisms underlying carrier transport, and long observed lifetimes of conducting carriers. We then discuss the voltage control of these inverted channels using a back-plane gate resulting in modulation of the lifetime of these carriers. This voltage control represents and extrinsic "knob" through which it may be possible to open a pathway for design of high performance IR photodetectors, as shown in this work.
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Submitted 6 July, 2020;
originally announced July 2020.
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Temporal Memory with Magnetic Racetracks
Authors:
Hamed Vakili,
Mohammad Nazmus Sakib,
Samiran Ganguly,
Mircea Stan,
Matthew W. Daniels,
Advait Madhavan,
Mark D. Stiles,
Avik W. Ghosh
Abstract:
Race logic is a relative timing code that represents information in a wavefront of digital edges on a set of wires in order to accelerate dynamic programming and machine learning algorithms. Skyrmions, bubbles, and domain walls are mobile magnetic configurations (solitons) with applications for Boolean data storage. We propose to use current-induced displacement of these solitons on magnetic racet…
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Race logic is a relative timing code that represents information in a wavefront of digital edges on a set of wires in order to accelerate dynamic programming and machine learning algorithms. Skyrmions, bubbles, and domain walls are mobile magnetic configurations (solitons) with applications for Boolean data storage. We propose to use current-induced displacement of these solitons on magnetic racetracks as a native temporal memory for race logic computing. Locally synchronized racetracks can spatially store relative timings of digital edges and provide non-destructive read-out. The linear kinematics of skyrmion motion, the tunability and low-voltage asynchronous operation of the proposed device, and the elimination of any need for constant skyrmion nucleation make these magnetic racetracks a natural memory for low-power, high-throughput race logic applications.
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Submitted 21 May, 2020;
originally announced May 2020.
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Self focusing Hybrid Skyrmions in spatially varying canted ferromagnetic systems
Authors:
Hamed Vakili,
Yunkun Xie,
Avik W. Ghosh
Abstract:
Magnetic skyrmions are quasiparticle configurations in a magnetic film that can act as information carrying bits for ultrasmall, all-electronic nonvolatile memory. The skyrmions can be nucleated and driven by spin-orbit torque from a current driven in a heavy metal underlayer. Along its gyrotropic path, a Magnus force can cause a skyrmion to be annihilated at the boundaries. By combining interfaci…
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Magnetic skyrmions are quasiparticle configurations in a magnetic film that can act as information carrying bits for ultrasmall, all-electronic nonvolatile memory. The skyrmions can be nucleated and driven by spin-orbit torque from a current driven in a heavy metal underlayer. Along its gyrotropic path, a Magnus force can cause a skyrmion to be annihilated at the boundaries. By combining interfacial and bulk Dzyaloshinskii-Moriya interactions (DMIs), for instance by using a B20 material on top of a heavy metal layer with high spin-orbit coupling, it is possible to engineer a hybrid skyrmion that will travel parallel to the racetrack with zero Magnus force. We show that by using a spatially varying interfacial DMI, a hybrid skyrmion will automatically self-focus onto such a track as its domain angle evolves along the path. Furthermore, using a gate driven voltage controlled magnetic anisotropy, we can control the trajectory of the hybrid skyrmion and its eventual convergence path and lane selection in a racetrack geometry.
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Submitted 8 January, 2021; v1 submitted 3 January, 2020;
originally announced January 2020.
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Minimum and maximum conductance of a thin film layer bridged interface: the role of anharmonicity and layer thickness
Authors:
Jingjie Zhang,
Rouzbeh Rastgarkafshgarkolaei,
Carlos A. Polanco,
Nam Q. Le,
Keivan Esfarjani,
Pamela M. Norris,
Avik W. Ghosh
Abstract:
We study the role of anharmonicity at interfaces with an added intermediate layer designed to facilitate interfacial phonon transport. Our results demonstrate that while in the harmonic limit the bridge may lower the conductance due to fewer available channels, anharmonicity can strongly enhance the thermal conductance of the bridged structure due to added inelastic channels. Moreover, we show tha…
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We study the role of anharmonicity at interfaces with an added intermediate layer designed to facilitate interfacial phonon transport. Our results demonstrate that while in the harmonic limit the bridge may lower the conductance due to fewer available channels, anharmonicity can strongly enhance the thermal conductance of the bridged structure due to added inelastic channels. Moreover, we show that the effect of anharmonicity on the conductance can be tuned by varying temperature or the bridge layer thickness, as both parameters change the total rate of occurrence of phonon-phonon scattering processes. Additionally, we show that the additive rule of thermal resistances(Ohms law) is valid for bridge layer thickness quite shorter than the average bulk MFP, beyond the regime it would be expected to fail.
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Submitted 16 October, 2019;
originally announced October 2019.
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Robust Formation of Ultrasmall Room-Temperature Neél Skyrmions in Amorphous Ferrimagnets from Atomistic Simulations
Authors:
Chung Ting Ma,
Yunkun Xie,
Howard Sheng,
Avik W. Ghosh,
S. Joseph Poon
Abstract:
Neél skyrmions originate from interfacial Dzyaloshinskii Moriya interaction (DMI). Recent studies have explored using thin-film ferromagnets and ferrimagnets to host Neél skyrmions for spintronic applications. However, it is unclear if ultrasmall (10 nm or less) skyrmions can ever be stabilized at room temperature for practical use in high density parallel racetrack memories. While thicker films c…
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Neél skyrmions originate from interfacial Dzyaloshinskii Moriya interaction (DMI). Recent studies have explored using thin-film ferromagnets and ferrimagnets to host Neél skyrmions for spintronic applications. However, it is unclear if ultrasmall (10 nm or less) skyrmions can ever be stabilized at room temperature for practical use in high density parallel racetrack memories. While thicker films can improve stability, DMI decays rapidly away from the interface. As such, spins far away from the interface would experience near-zero DMI, raising question on whether or not unrealistically large DMI is needed to stabilize skyrmions, and whether skyrmions will also collapse away from the interface. To address these questions, we have employed atomistic stochastic Landau-Lifshitz-Gilbert simulations to investigate skyrmions in amorphous ferrimagnetic GdCo. It is revealed that a significant reduction in DMI below that of Pt is sufficient to stabilize ultrasmall skyrmions even in films as thick as 15 nm. Moreover, skyrmions are found to retain a uniform columnar shape across the film thickness despite the decaying DMI. Our results show that increasing thickness and reducing DMI in GdCo can further reduce the size of skyrmions at room temperature, which is crucial to improve the density and energy efficiency in skyrmion based devices.
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Submitted 1 July, 2019;
originally announced July 2019.
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Computational search for ultrasmall and fast skyrmions in the Inverse Heusler family
Authors:
Yunkun Xie,
Jianhua Ma,
Hamed Vakilitaleghani,
Yaohua Tan,
Avik W. Ghosh
Abstract:
Skyrmions are magnetic excitations that are potentially ultrasmall and topologically protected, making them interesting for high-density all-electronic ultrafast storage applications. While recent experiments have confirmed the existence of various types of skyrmions, their typical sizes are much larger than traditional domain walls, except at very low temperature. In this work, we explore the opt…
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Skyrmions are magnetic excitations that are potentially ultrasmall and topologically protected, making them interesting for high-density all-electronic ultrafast storage applications. While recent experiments have confirmed the existence of various types of skyrmions, their typical sizes are much larger than traditional domain walls, except at very low temperature. In this work, we explore the optimal material parameters for hosting ultra-small, fast, and room temperature stable skyrmions. As concrete examples, we explore potential candidates from the inverse Heusler family. Using first-principles calculations of structural and magnetic properties, we identify several promising ferrimagnetic inverse Heusler half-metal/near half-metals and analyze their phase space for size and metastability.
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Submitted 27 January, 2019;
originally announced January 2019.
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Analog Signal Processing Using Stochastic Magnets
Authors:
Samiran Ganguly,
Kerem Y. Camsari,
Avik W. Ghosh
Abstract:
We present a low barrier magnet based compact hardware unit for analog stochastic neurons and demonstrate its use as a building-block for neuromorphic hardware. By coupling circular magnetic tunnel junctions (MTJs) with a CMOS based analog buffer, we show that these units can act as leaky-integrate-and fire (LIF) neurons, a model of biological neural networks particularly suited for temporal infer…
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We present a low barrier magnet based compact hardware unit for analog stochastic neurons and demonstrate its use as a building-block for neuromorphic hardware. By coupling circular magnetic tunnel junctions (MTJs) with a CMOS based analog buffer, we show that these units can act as leaky-integrate-and fire (LIF) neurons, a model of biological neural networks particularly suited for temporal inferencing and pattern recognition. We demonstrate examples of temporal sequence learning, processing, and prediction tasks in real time, as a proof of concept demonstration of scalable and adaptive signal-processors. Efficient non von-Neumann hardware implementation of such processors can open up a pathway for integration of hardware based cognition in a wide variety of emerging systems such as IoT, industrial controls, bio- and photo-sensors, and Unmanned Autonomous Vehicles.
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Submitted 19 December, 2018;
originally announced December 2018.
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Impact of geometry and non-idealities on electron 'optics' based graphene p-n junction devices
Authors:
Mirza M. Elahi,
K. M. Masum Habib,
Ke Wang,
Gil-Ho Lee,
Philip Kim,
Avik W. Ghosh
Abstract:
We articulate the challenges and opportunities of unconventional devices using the photon like flow of electrons in graphene, such as Graphene Klein Tunnel (GKT) transistors. The underlying physics is the employment of momentum rather than energy filtering to engineer a gate tunable transport gap in a 2D Dirac cone bandstructure. In the ballistic limit, we get a clean tunable gap that implies subt…
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We articulate the challenges and opportunities of unconventional devices using the photon like flow of electrons in graphene, such as Graphene Klein Tunnel (GKT) transistors. The underlying physics is the employment of momentum rather than energy filtering to engineer a gate tunable transport gap in a 2D Dirac cone bandstructure. In the ballistic limit, we get a clean tunable gap that implies subthermal switching voltages below the Boltzmann limit, while maintaining a high saturating current in the output characteristic. In realistic structures, detailed numerical simulations and experiments show that momentum scattering, especially from the edges, bleeds leakage paths into the transport gap and turns it into a pseudogap. We quantify the importance of reducing edge roughness and overall geometry on the low-bias transfer characteristics of GKT transistors and benchmark against experimental data. We find that geometry plays a critical role in determining the performance of electron optics based devices that utilize angular resolution of electrons.
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Submitted 11 October, 2018; v1 submitted 5 October, 2018;
originally announced October 2018.
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Machine learning electron correlation in a disordered medium
Authors:
Jianhua Ma,
Puhan Zhang,
Yaohua Tan,
Avik W. Ghosh,
Gia-Wei Chern
Abstract:
Learning from data has led to a paradigm shift in computational materials science. In particular, it has been shown that neural networks can learn the potential energy surface and interatomic forces through examples, thus bypassing the computationally expensive density functional theory calculations. Combining many-body techniques with a deep learning approach, we demonstrate that a fully-connecte…
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Learning from data has led to a paradigm shift in computational materials science. In particular, it has been shown that neural networks can learn the potential energy surface and interatomic forces through examples, thus bypassing the computationally expensive density functional theory calculations. Combining many-body techniques with a deep learning approach, we demonstrate that a fully-connected neural network is able to learn the complex collective behavior of electrons in strongly correlated systems. Specifically, we consider the Anderson-Hubbard (AH) model, which is a canonical system for studying the interplay between electron correlation and strong localization. The ground states of the AH model on a square lattice are obtained using the real-space Gutzwiller method. The obtained solutions are used to train a multi-task multi-layer neural network, which subsequently can accurately predict quantities such as the local probability of double occupation and the quasiparticle weight, given the disorder potential in the neighborhood as the input.
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Submitted 4 October, 2018;
originally announced October 2018.
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Atomic scale characterization of graphene p-n junctions for electron-optical applications
Authors:
Xiaodong Zhou,
Alexander Kerelsky,
Mirza M. Elahi,
Dennis Wang,
K. M. Masum Habib,
Redwan N. Sajjad,
Pratik Agnihotri,
Ji Ung Lee,
Avik W. Ghosh,
Frances M. Ross,
Abhay N. Pasupathy
Abstract:
Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends crucially on the doping profile and roughness of the junction. Here, we use four-probe scanning tunneling microscopy and spectroscopy (STM/STS) to characterize two…
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Graphene p-n junctions offer a potentially powerful approach towards controlling electron trajectories via collimation and focusing in ballistic solid-state devices. The ability of p-n junctions to control electron trajectories depends crucially on the doping profile and roughness of the junction. Here, we use four-probe scanning tunneling microscopy and spectroscopy (STM/STS) to characterize two state-of-the-art graphene p-n junction geometries at the atomic scale, one with CMOS polySi gates and another with naturally cleaved graphite gates. Using spectroscopic imaging, we characterize the local doping profile across and along the p-n junctions. We find that realistic junctions exhibit non-ideality both in their geometry as well as in the doping profile across the junction. We show that the geometry of the junction can be improved by using the cleaved edge of van der Waals metals such as graphite to define the junction. We quantify the geometric roughness and doping profiles of junctions experimentally and use these parameters in Nonequilibrium Green's Function based simulations of focusing and collimation in these realistic junctions. We find that for realizing Veselago focusing, it is crucial to minimize lateral interface roughness which only natural graphite gates achieve, and to reduce junction width, in which both devices under investigation underperform. We also find that carrier collimation is currently limited by the non-linearity of the doping profile across the junction. Our work provides benchmarks of the current graphene p-n junction quality and provides guidance for future improvements.
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Submitted 4 October, 2018;
originally announced October 2018.
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Graphene Transistor Based on Tunable Dirac-Fermion-Optics
Authors:
Ke Wang,
Mirza M. Elahi,
K. M. Masum Habib,
Takashi Taniguchi,
Kenji Watanabe,
Avik W. Ghosh,
Gil-Ho Lee,
Philip Kim
Abstract:
The linear energy-momentum dispersion, coupled with pseudo-spinors, makes graphene an ideal solid-state material platform to realize an electronic device based on Dirac-Fermionic relativistic quantum mechanics. Employing local gate control, several examples of electronic devices based on Dirac fermion dynamics have been demonstrated, including Klein tunneling, negative refraction and specular Andr…
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The linear energy-momentum dispersion, coupled with pseudo-spinors, makes graphene an ideal solid-state material platform to realize an electronic device based on Dirac-Fermionic relativistic quantum mechanics. Employing local gate control, several examples of electronic devices based on Dirac fermion dynamics have been demonstrated, including Klein tunneling, negative refraction and specular Andreev reflection. In this work, we present a quantum switch based on analogous Dirac-fermion-optics (DFO), in which the angle dependence of Klein tunneling is explicitly utilized to build tunable collimators and reflectors for the quantum wave function of Dirac fermions. We employ a novel dual-source design with a single flat reflector, which minimizes diffusive edge scattering and suppresses the background incoherent transmission. Our gate-tunable collimator-reflector device design enables measurement of the net DFO contribution in the switching device operation. We measure a full set of transmission coefficients of DFO wavefunction between multiple leads of the device, separating the classical contribution from that of any disorder in the channel. Since the DFO quantum switch demonstrated in this work requires no explicit energy gap, the switching operation is expected to be robust against thermal fluctuations and inhomogeneity length scales comparable to the Fermi wavelength. We find our quantum switch works at an elevated temperature up to 230 K and large bias current density up to 102 A/m, over a wide range of carrier densities. The tunable collimator-reflector coupled with the conjugated source electrodes developed in this work provides an additional component to build more efficient DFO electronic devices.
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Submitted 22 September, 2018; v1 submitted 18 September, 2018;
originally announced September 2018.
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Phonon-mediated thermal transport at exponentially mass-graded interfaces: A computational study
Authors:
Rouzbeh Rastgarkafshgarkolaei,
Jingjie Zhang,
Carlos A. Polanco,
Nam Q. Le,
Avik W. Ghosh,
Pamela M. Norris
Abstract:
We numerically investigate thermal transport at solid-solid interfaces with graded intermediate layers whose masses vary exponentially from one side to the other. Using Non-Equilibrium Green's Function and Non-Equilibrium Molecular Dynamics simulations, we show that an exponentially mass-graded junction with a finite thickness can result in 68\% of enhancement in thermal conductance larger compare…
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We numerically investigate thermal transport at solid-solid interfaces with graded intermediate layers whose masses vary exponentially from one side to the other. Using Non-Equilibrium Green's Function and Non-Equilibrium Molecular Dynamics simulations, we show that an exponentially mass-graded junction with a finite thickness can result in 68\% of enhancement in thermal conductance larger compared to a single bridging layer (29\%) and a linear mass-graded junction (64\%) of similar thickness. We examine how the thermal conductance at such interfaces is influenced by geometric qualities and strength of anharmonicity. For geometric properties, we tested the effects from number of layers and the junction thickness. In the absence of anharmonicity, increasing the number of layers results in better elastic phonon transmission at each individual boundary, countered by the decrease of available conducting channels. Consequently, in the harmonic regime, conductance initially increases with number of layers due to better bridging, but quickly saturates. The presence of slight anharmonic effects (at ultra-low temperature T = 2 K) turns the saturation into a monotonically increasing trend. Anharmonic effects can facilitate interfacial thermal transport through the thermalization of phonons. At high temperature, however, the role of anharmonicity as a facilitator of interfacial thermal transport reverses. Strong anharmonicity introduces significant intrinsic resistance, overruling the enhancement in thermal conduction at the boundaries. Our analysis shows that in our model Lennard-Jones system, the influence of a mass-graded junction on thermal conductance is dominated by the phonon thermalization through anharmonic effects, while elastic phonon transmission plays a secondary role.
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Submitted 12 September, 2018;
originally announced September 2018.
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Reservoir Computing based Neural Image Filters
Authors:
Samiran Ganguly,
Yunfei Gu,
Yunkun Xie,
Mircea R. Stan,
Avik W. Ghosh,
Nibir K. Dhar
Abstract:
Clean images are an important requirement for machine vision systems to recognize visual features correctly. However, the environment, optics, electronics of the physical imaging systems can introduce extreme distortions and noise in the acquired images. In this work, we explore the use of reservoir computing, a dynamical neural network model inspired from biological systems, in creating dynamic i…
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Clean images are an important requirement for machine vision systems to recognize visual features correctly. However, the environment, optics, electronics of the physical imaging systems can introduce extreme distortions and noise in the acquired images. In this work, we explore the use of reservoir computing, a dynamical neural network model inspired from biological systems, in creating dynamic image filtering systems that extracts signal from noise using inverse modeling. We discuss the possibility of implementing these networks in hardware close to the sensors.
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Submitted 7 September, 2018;
originally announced September 2018.
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Modeling tunnel field effect transistors - from interface chemistry to non-idealities to circuit level performance
Authors:
Sheikh Z. Ahmed,
Yaohua Tan,
Daniel S. Truesdell,
Benton H. Calhoun,
Avik W. Ghosh
Abstract:
We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying the well known Simmons equation for oxide tunneling, where we integrate the Wentzel-Kramers-Brillouin (WKB) tunneling current over the transverse modes. We extend…
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We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic band-to-band tunneling current is calculated by modifying the well known Simmons equation for oxide tunneling, where we integrate the Wentzel-Kramers-Brillouin (WKB) tunneling current over the transverse modes. We extend the Simmons equation to finite temperature and non-rectangular barriers using a two-band model for the channel material and an analytical channel potential profile obtained from Poisson's equation. The two-band model is parametrized first principles by calibrating with hybrid Density Functional Theory calculations, and extended to random alloys with a band unfolding technique. Our quasi-analytical model shows quantitative agreement with ballistic quantum transport calculations. On top of the ballistic tunnel current we incorporate higher order processes arising at junctions coupling the bands, specifically interface trap-assisted tunneling and Auger generation processes. Our results suggest that both processes significantly impact the off-state characteristics of the TFETs - Auger in particular being present even for perfect interfaces. We show that our microscopic model can be used to quantify the TFET performance on the atomistic interface quality. Finally, we use our simulations to quantify circuit level metrics such as energy consumption.
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Submitted 19 June, 2018; v1 submitted 16 June, 2018;
originally announced June 2018.
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A Multiscale Materials-to-Systems Modeling of Polycrystalline Pb-Salt Photodetectors
Authors:
Samiran Ganguly,
Moonhyung Jang,
Yaohua Tan,
Sung-Shik Yoo,
Mool C. Gupta,
Avik W. Ghosh
Abstract:
We present a physics based multiscale materials-to-systems model for polycrystalline $PbSe$ photodetectors that connects fundamental material properties to circuit level performance metrics. From experimentally observed film structures and electrical characterization, we first develop a bandstructure model that explains carrier-type inversion and large carrier lifetimes in sensitized films. The un…
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We present a physics based multiscale materials-to-systems model for polycrystalline $PbSe$ photodetectors that connects fundamental material properties to circuit level performance metrics. From experimentally observed film structures and electrical characterization, we first develop a bandstructure model that explains carrier-type inversion and large carrier lifetimes in sensitized films. The unique bandstructure of the photosensitive film causes separation of generated carriers with holes migrating to the inverted $PbSe|PbI_2$ interface, while electrons are trapped in the bulk of the film inter-grain regions. These flows together forms the 2-current theory of photoconduction that quantitatively captures the $I-V$ relationship in these films. To capture the effect of pixel scaling and minority carrier blocking, we develop a model for the metallic contacts with the detector films based on the relative workfunction differences. We also develop detailed models for various physical parameters such as mobility, lifetime, quantum efficiency, noise etc. that connect the detector performance metrics such as responsivity $\mathcal{R}$ and specific detectivity $\mathcal{D^*}$ intimately with material properties and operating conditions. A compact Verilog-A based SPICE model is developed which can be directly combined with advanced digital ROIC cell designs to simulate and optimize high performance FPAs which form a critical component in the rapidly expanding market of self-driven automotive, IoTs, security, and embedded applications.
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Submitted 7 June, 2018;
originally announced June 2018.
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Hardware based Spatio-Temporal Neural Processing Backend for Imaging Sensors: Towards a Smart Camera
Authors:
Samiran Ganguly,
Yunfei Gu,
Mircea R. Stan,
Avik W. Ghosh
Abstract:
In this work we show how we can build a technology platform for cognitive imaging sensors using recent advances in recurrent neural network architectures and training methods inspired from biology. We demonstrate learning and processing tasks specific to imaging sensors, including enhancement of sensitivity and signal-to-noise ratio (SNR) purely through neural filtering beyond the fundamental limi…
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In this work we show how we can build a technology platform for cognitive imaging sensors using recent advances in recurrent neural network architectures and training methods inspired from biology. We demonstrate learning and processing tasks specific to imaging sensors, including enhancement of sensitivity and signal-to-noise ratio (SNR) purely through neural filtering beyond the fundamental limits sensor materials, and inferencing and spatio-temporal pattern recognition capabilities of these networks with applications in object detection, motion tracking and prediction. We then show designs of unit hardware cells built using complementary metal-oxide semiconductor (CMOS) and emerging materials technologies for ultra-compact and energy-efficient embedded neural processors for smart cameras.
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Submitted 22 March, 2018;
originally announced March 2018.
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Computational Investigation of Inverse-Heusler compounds for Spintronics Applications
Authors:
Jianhua Ma,
Jiangang He,
Dipanjan Mazumdar,
Kamaram Munira,
Sahar Keshavarz,
Tim Lovorn,
C. Wolverton,
Avik W. Ghosh,
William H. Butler
Abstract:
First-principles calculations of the electronic structure, magnetism and structural stability of inverse-Heusler compounds with the chemical formula \textit{X$_2$YZ} are presented and discussed with a goal of identifying compounds of interest for spintronics. Compounds for which the number of electrons per atom for \textit{Y} exceed that for \textit{X} and for which \textit{X} is one of Sc, Ti, V,…
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First-principles calculations of the electronic structure, magnetism and structural stability of inverse-Heusler compounds with the chemical formula \textit{X$_2$YZ} are presented and discussed with a goal of identifying compounds of interest for spintronics. Compounds for which the number of electrons per atom for \textit{Y} exceed that for \textit{X} and for which \textit{X} is one of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, or Cu; \textit{Y} is one of Ti, V, Cr, Mn, Fe, Co, Ni, Cu, or Zn; and \textit{Z} is one of Al, Ga, In, Si, Ge, Sn, P, As or Sb were considered. The formation energy per atom of each compound was calculated. By comparing our calculated formation energies to those calculated for phases in the Inorganic Crystal Structure Database (ICSD) of observed phases, we estimate that inverse-Heuslers with formation energies within 0.052 eV/atom of the calculated convex hull are reasonably likely to be synthesizable in equilibrium. The observed trends in the formation energy and relative structural stability as the \textit{X}, \textit{Y} and \textit{Z} elements vary are described. In addition to the Slater-Pauling gap after 12 states per formula unit in one of the spin channels, inverse-Heusler phases often have gaps after 9 states or 14 states. We describe the origin and occurrence of these gaps. We identify 14 inverse-Heusler semiconductors, 51 half-metals and 50 near half-metals with negative formation energy. In addition, our calculations predict 4 half-metals and 6 near half-metals to lie close to the respective convex hull of stable phases, and thus may be experimentally realized under suitable synthesis conditions, resulting in potential candidates for future spintronics applications.
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Submitted 6 December, 2017;
originally announced December 2017.
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Reservoir Computing using Stochastic p-Bits
Authors:
Samiran Ganguly,
Kerem Y. Camsari,
Avik W. Ghosh
Abstract:
We present a general hardware framework for building networks that directly implement Reservoir Computing, a popular software method for implementing and training Recurrent Neural Networks and are particularly suited for temporal inferencing and pattern recognition. We provide a specific example of a candidate hardware unit based on a combination of soft-magnets, spin-orbit materials and CMOS tran…
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We present a general hardware framework for building networks that directly implement Reservoir Computing, a popular software method for implementing and training Recurrent Neural Networks and are particularly suited for temporal inferencing and pattern recognition. We provide a specific example of a candidate hardware unit based on a combination of soft-magnets, spin-orbit materials and CMOS transistors that can implement these networks. Efficient non von-Neumann hardware implementation of reservoir computers can open up a pathway for integration of temporal Neural Networks in a wide variety of emerging systems such as Internet of Things (IoTs), industrial controls, bio- and photo-sensors, and self-driving automotives.
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Submitted 28 September, 2017;
originally announced September 2017.
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Graphene Klein tunnel transistors for high speed analog RF applications
Authors:
Yaohua Tan,
Mirza M. Elahi,
Han-Yu Tsao,
K. M. Masum Habib,
N. Scott Barker,
Avik W. Ghosh
Abstract:
We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n junctions (GPNJs). Klein tunneling creates a collimation of electrons across each GPNJ, so that the lack of substantial overlap between transmission lobes across succe…
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We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The GKTFET consists of a sequence of angled graphene p-n junctions (GPNJs). Klein tunneling creates a collimation of electrons across each GPNJ, so that the lack of substantial overlap between transmission lobes across successive junctions creates a gate-tunable transport gap without significantly compromising the on-current. Electron scattering at the device edge tends to bleed parasitic states into the gap, but the resulting pseudogap is still sufficient to create a saturated output ($I_D-V_D$) characteristic and a high output resistance. The modulated density of states generates a higher transconductance ($g_m$) and unity current gain cut-off frequency ($f_T$) than GFETs. More significantly the high output resistance makes the unity power gain cut-off frequency ($f_{max}$) of GKTFETs considerably larger than GFETs, making analog GKTFET potentially useful for RF electronics. Our estimation shows the $f_T$/$f_{max}$ of a GKTFET with 1 $μ$m channel reaches 33 GHz/17 GHz, and scale up to 350 GHz/53 GHz for 100 nm channel (assuming a single, scalable trapezoidal gate). The $f_{max}$ of a GKTFET is 10 times higher than a GFET with the same channel length.
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Submitted 2 August, 2017; v1 submitted 18 May, 2017;
originally announced May 2017.
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Spintronic signatures of Klein tunneling in topological insulators
Authors:
Yunkun Xie,
Yaohua Tan,
Avik W. Ghosh
Abstract:
Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albeit indirectly. We show that Klein tunneling maybe easier to detect for spin-momentum locked electrons crossing a PN junction along a three-dimensional topological insulator surface. In these topological insulator PN junc…
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Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albeit indirectly. We show that Klein tunneling maybe easier to detect for spin-momentum locked electrons crossing a PN junction along a three-dimensional topological insulator surface. In these topological insulator PN junctions (TIPNJs), the spin texture and momentum distribution of transmitted electrons can be measured electrically using a ferromagnetic probe for varying gate voltages and angles of current injection. Based on transport models across a TIPNJ, we show that the asymmetry in the potentiometric signal between PP and PN junctions and its overall angular dependence serve as a direct signature of Klein tunneling.
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Submitted 18 May, 2017;
originally announced May 2017.
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From materials to systems: a multiscale analysis of nanomagnetic switching
Authors:
Yunkun Xie,
Jianhua Ma,
Samiran Ganguly,
Avik W Ghosh
Abstract:
With the increasing demand for low-power electronics, nanomagnetic devices have emerged as strong potential candidates to complement present day transistor technology. A variety of novel switching effects such as spin torque and giant spin Hall offer scalable ways to manipulate nano-sized magnets. However, the low intrinsic energy cost of switching spins is often compromised by the energy consumed…
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With the increasing demand for low-power electronics, nanomagnetic devices have emerged as strong potential candidates to complement present day transistor technology. A variety of novel switching effects such as spin torque and giant spin Hall offer scalable ways to manipulate nano-sized magnets. However, the low intrinsic energy cost of switching spins is often compromised by the energy consumed in the overhead circuitry in creating the necessary switching fields. Scaling brings in added concerns such as the ability to distinguish states (readability) and to write information without spontaneous backflips (reliability). A viable device must ultimately navigate a complex multi-dimensional material and design space defined by volume, energy budget, speed and a target read-write-retention error. In this paper, we review the major challenges facing nanomagnetic devices and present a multi-scale computational framework to explore possible innovations at different levels (material, device, or circuit), along with a holistic understanding of their overall energy-delay-reliability tradeoff.
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Submitted 1 February, 2018; v1 submitted 29 March, 2017;
originally announced March 2017.
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Optimizing the interfacial thermal conductance at gold-alkane junctions from 'First Principles'
Authors:
Jingjie Zhang,
Carlos A. Polanco,
Avik W. Ghosh
Abstract:
We theoretically explore the influence of end-group chemistry (bond stiffness and mass) on the interfacial thermal conductance at a gold-alkane interface. We accomplish this using the Non-Equilibrium Green's Function (NEGF) coupled with first principle parameters in Density Functional Theory (DFT) within the harmonic approximation. Our results indicate that the interfacial thermal conductance is n…
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We theoretically explore the influence of end-group chemistry (bond stiffness and mass) on the interfacial thermal conductance at a gold-alkane interface. We accomplish this using the Non-Equilibrium Green's Function (NEGF) coupled with first principle parameters in Density Functional Theory (DFT) within the harmonic approximation. Our results indicate that the interfacial thermal conductance is not a monotonic function of either chemical parameters, but instead maximizes at an optimal set of mass and bonding strength. This maximum is a result of the interplay between the overlap in local density of states of the device and that in the contacts, as well as the phonon group velocity. We also demonstrate the intrinsic relationship between the Diffusive Mismatch Model (DMM) and the properties from NEGF, and provide an approach to get DMM from first principles NEGF. By comparing the NEGF based DMM conductance and range of conductance while altering the mass and bonding strength, we show that DMM provides an upper bound for elastic transport in this dimensionally mismatched system. We thus have a prescription to enhance the thermal conductance of systems at low temperatures or at low dimensions where inelastic scattering is considerably suppressed.
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Submitted 14 December, 2016;
originally announced December 2016.
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Computational Investigation of Half-Heusler Compounds for Spintronics Applications
Authors:
Jianhua Ma,
Vinay I. Hegde,
Kamaram Munira,
Yunkun Xie,
Sahar Keshavarz,
David T. Mildebrath,
C. Wolverton,
Avik W. Ghosh,
W. H. Butler
Abstract:
We present first-principles density functional calculations of the electronic structure, magnetism, and structural stability of 378 $\textit{XYZ}$ half-Heusler compounds (with $X=$ Cr, Mn, Fe, Co, Ni, Ru, Rh, $Y=$ Ti, V, Cr, Mn, Fe, Ni, $Z=$ Al, Ga, In, Si, Ge, Sn, P, As, Sb). We find that a "Slater-Pauling density of states" with a gap or pseudogap at three states per atom below the gap in at lea…
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We present first-principles density functional calculations of the electronic structure, magnetism, and structural stability of 378 $\textit{XYZ}$ half-Heusler compounds (with $X=$ Cr, Mn, Fe, Co, Ni, Ru, Rh, $Y=$ Ti, V, Cr, Mn, Fe, Ni, $Z=$ Al, Ga, In, Si, Ge, Sn, P, As, Sb). We find that a "Slater-Pauling density of states" with a gap or pseudogap at three states per atom below the gap in at least one spin channel is a common feature in half-Heusler compounds. We find that the presence of such a gap at the Fermi energy in one or both spin channels contributes greatly to the stability of a half-Heusler compound. We calculate the formation energy of each compound and systematically investigate its stability against all other phases in the Open Quantum Materials Database (OQMD). We represent the thermodynamic phase stability of each compound as its distance from the convex hull of stable phases in the respective chemical space and show that the hull distance of a compound is a good measure of the likelihood of its experimental synthesis. We identify 26 18-electron semiconductors, 45 half-metals, and 34 near half-metals with negative formation energy, that follow the Slater-Pauling rule of three electrons per atom. Our calculations predict new thermodynamically stable semiconducting phases NiScAs, RhTiP, and RuVAs, which merit further experimental exploration. Further, two interesting zero-moment half-metals, CrMnAs and MnCrAs, are calculated to have negative formation energy. In addition, our calculations predict a number of new, hitherto unreported, semiconducting (e.g., CoVGe, FeVAs), half-metallic (e.g., RhVSb), near half-metallic (e.g., CoFeSb, CoVP) half-Heusler compounds to lie close to the respective convex hull of stable phases, and thus may be experimentally realized under suitable synthesis conditions, resulting in potential candidates for various spintronics applications.
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Submitted 8 December, 2016; v1 submitted 7 October, 2016;
originally announced October 2016.
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Effects of bulk and interfacial anharmonicity on thermal conductance at solid/solid interfaces
Authors:
Nam Q. Le,
Carlos A. Polanco,
Rouzbeh Rastgarkafshgarkolaei,
Jingjie Zhang,
Avik W. Ghosh,
Pamela M. Norris
Abstract:
We present the results of classical molecular dynamics simulations to assess the relative contributions to interfacial thermal conductance from inelastic phonon processes at the interface and in the adjacent bulk materials. The simulated system is the prototypical interface between argon and "heavy argon" crystals, which enables comparison with many past computational studies. We run simulations i…
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We present the results of classical molecular dynamics simulations to assess the relative contributions to interfacial thermal conductance from inelastic phonon processes at the interface and in the adjacent bulk materials. The simulated system is the prototypical interface between argon and "heavy argon" crystals, which enables comparison with many past computational studies. We run simulations interchanging the Lennard-Jones potential with its harmonic approximation to test the effect of anharmonicity on conductance. The results confirm that the presence of anharmonicity is correlated with increasing thermal conductance with temperature, which supports conclusions from prior experimental and theoretical work. However, in the model Ar/heavy-Ar system, anharmonic effects at the interface itself contribute a surprisingly small part of the total thermal conductance. The larger fraction of the thermal conductance at high temperatures arises from anharmonic effects away from the interface. These observations are supported by comparisons of the spectral energy density, which suggest that bulk anharmonic processes increase interfacial conductance by thermalizing energy from modes with low transmission to modes with high transmission.
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Submitted 4 October, 2016;
originally announced October 2016.
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Design rules for interfacial thermal conductance - building better bridges
Authors:
Carlos A. Polanco,
Rouzbeh Rastgarkafshgarkolaei,
Jingjie Zhang,
Nam Le,
Pamela M. Norris,
Avik W. Ghosh
Abstract:
We study the thermal conductance across solid-solid interfaces as the composition of an intermediate matching layer is varied. In absence of phonon-phonon interactions, an added layer can make the interfacial conductance increase or decrease depending on the interplay between (1) an increase in phonon transmission due to better bridging between the contacts, and (2) a decrease in the number of ava…
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We study the thermal conductance across solid-solid interfaces as the composition of an intermediate matching layer is varied. In absence of phonon-phonon interactions, an added layer can make the interfacial conductance increase or decrease depending on the interplay between (1) an increase in phonon transmission due to better bridging between the contacts, and (2) a decrease in the number of available conduction channels that must conserve their momenta transverse to the interface. When phonon-phonon interactions are included, the added layer is seen to aid conductance when the decrease in resistances at the contact-layer boundaries compensate for the additional layer resistance. For the particular systems explored in this work, the maximum conductance happens when the layer mass is close to the geometric mean of the contact masses. The surprising result, usually associated with coherent antireflection coatings, follows from a monotonic increase in the boundary resistance with the interface mass ratio. This geometric mean condition readily extends to a compositionally graded interfacial layer with an exponentially varying mass that generates the thermal equivalent of a broadband impedance matching network.
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Submitted 20 August, 2016;
originally announced August 2016.
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Numerical Fokker-Planck study of stochastic write error slope in spin torque switching
Authors:
Yunkun Xie,
Behtash Behin-Aein,
Avik W. Ghosh
Abstract:
This paper analyzes write errors in spin torque switching due to thermal fluctuations in a system with Perpendicular Magnetic Anisotropy (PMA). Prior analytical and numerical methods are summarized, a physics based Fokker-Planck Equation (FPE) chosen for its computational efficiency and broad applicability to all switching regimes. The relation between write error slope and material parameters is…
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This paper analyzes write errors in spin torque switching due to thermal fluctuations in a system with Perpendicular Magnetic Anisotropy (PMA). Prior analytical and numerical methods are summarized, a physics based Fokker-Planck Equation (FPE) chosen for its computational efficiency and broad applicability to all switching regimes. The relation between write error slope and material parameters is discussed in detail to enable better device engineering and optimization. Finally a 2D FPE tool is demonstrated that extends the applicability of FPE to write error in non PMA systems with built-in asymmetry.
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Submitted 25 July, 2016;
originally announced July 2016.
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Electron optics with ballistic graphene junctions
Authors:
Shaowen Chen,
Zheng Han,
Mirza M. Elahi,
K. M. Masum Habib,
Lei Wang,
Bo Wen,
Yuanda Gao,
Takashi Taniguchi,
Kenji Watanabe,
James Hone,
Avik W. Ghosh,
Cory R. Dean
Abstract:
Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn jun…
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Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Moreover ballistic transport over micron length scales at ambient temperature has been realized, providing an ideal platform to realize a new generation of device based on electron lensing. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snells law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Our results pave the way for realizing novel electron optics based on graphene pn junctions.
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Submitted 25 February, 2016;
originally announced February 2016.
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Transmission Engineering as a route to Subthermal Switching
Authors:
Avik W. Ghosh
Abstract:
The physics of low subthreshold devices is interpreted in terms of a gate dependent change in their mode averaged transmission function, in addition to a capacitive shift in their overall mode spectrum. Accordingly, we explore a variety of subthermal switches that alter the bandwidth, bandgap or amplitude of the transmission, and combinations thereof. The Landauer theory for current flow provides…
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The physics of low subthreshold devices is interpreted in terms of a gate dependent change in their mode averaged transmission function, in addition to a capacitive shift in their overall mode spectrum. Accordingly, we explore a variety of subthermal switches that alter the bandwidth, bandgap or amplitude of the transmission, and combinations thereof. The Landauer theory for current flow provides a convenient way to derive the subthreshold swing in each case analytically and suggests ways to beat the Boltzmann limit.
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Submitted 3 October, 2015;
originally announced October 2015.