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Towards edge engineering of two-dimensional layered transition-metal dichalcogenides by chemical vapor deposition
Authors:
Wei Fu,
Mark John,
Thathsara D. Maddumapatabandi,
Fabio Bussolotti,
Yong Sean Yau,
Ming Lin,
Kuan Eng Johnson Goh
Abstract:
The manipulation of edge configurations and structures in atomically thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges), as well as diverse edge morphologies (1D nan…
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The manipulation of edge configurations and structures in atomically thin transition metal dichalcogenides (TMDs) for versatile functionalization has attracted intensive interest in recent years. The chemical vapor deposition (CVD) approach has shown promise for TMD edge engineering of atomic edge configurations (1H, 1T or 1T'-zigzag or armchair edges), as well as diverse edge morphologies (1D nanoribbons, 2D dendrites, 3D spirals, etc). These rich-edge TMD layers offer versatile candidates for probing the physical and chemical properties, and exploring new applications in electronics, optoelectronics, catalysis, sensing and quantum field. In this review, we present an overview of the current state-of-the-art in the manipulation of TMD atomic edges and edge-rich structures using CVD. We highlight the vast range of unique properties associated with these edge configurations and structures and provide insights into the opportunities afforded by such edge-functionalized crystals. The objective of this review is to motivate further research and development efforts in using CVD as a scalable approach to harness the benefits of such crystal-edge engineering.
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Submitted 25 April, 2024;
originally announced April 2024.
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Electrical control of valley polarized charged biexcitons in monolayer WS$_2$
Authors:
Sarthak Das,
Ding Huang,
Ivan Verzhbitskiy,
Zi-En Ooi,
Chit Siong Lau,
Rainer Lee,
Calvin Pei Yu Wong,
Kuan Eng Johnson Goh
Abstract:
Excitons are key to the optoelectronic applications of van der Waals semiconductors with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation is complicated by their inherent charge neutrality and the additional loss channels induced by electrical doping. We demonstrate the dynamic control of valley polarization in charged biexciton (quinton) states of mon…
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Excitons are key to the optoelectronic applications of van der Waals semiconductors with the potential for versatile on-demand tuning of properties. Yet, their electrical manipulation is complicated by their inherent charge neutrality and the additional loss channels induced by electrical doping. We demonstrate the dynamic control of valley polarization in charged biexciton (quinton) states of monolayer tungsten disulfide, achieving up to a sixfold increase in the degree of circular polarization under off-resonant excitation. In contrast to the weak direct tuning of excitons typically observed using electrical gating, the quinton photoluminescence remains stable, even with increased scattering from electron doping. By exciting at the exciton resonances, we observed the reproducible non-monotonic switching of the charged state population as the electron doping is varied under gate bias, indicating a coherent interplay between neutral and charged exciton states.
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Submitted 15 April, 2024;
originally announced April 2024.
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High-Fidelity CZ Gates in Double Quantum Dot -- Circuit QED Systems Beyond the Rotating-Wave Approximation
Authors:
Guangzhao Yang,
Marek Gluza,
Si Yan Koh,
Calvin Pei Yu Wong,
Kuan Eng Johnson Goh,
Bent Weber,
Hui Khoon Ng,
Teck Seng Koh
Abstract:
Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge degrees of freedom. Quantum gates can be implemented by parametrically driving the qubits while their transition frequencies are detuned from the resonator frequency. Long-range two-qubit CZ gates have been proposed for th…
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Semiconductor double quantum dot (DQD) qubits coupled via superconducting microwave resonators provide a powerful means of long-range manipulation of the qubits' spin and charge degrees of freedom. Quantum gates can be implemented by parametrically driving the qubits while their transition frequencies are detuned from the resonator frequency. Long-range two-qubit CZ gates have been proposed for the DQD spin qubit within the rotating-wave approximation (RWA). Rapid gates demand strong coupling, but RWA breaks down when coupling strengths become significant relative to system frequencies. Therefore, understanding the detrimental impact of time-dependent terms ignored by RWA is critical for high-fidelity operation. Here, we go beyond RWA to study CZ gate fidelity for both DQD spin and charge qubits. We propose a novel parametric drive on the charge qubit that produces fewer time-dependent terms and show that it outperforms its spin counterpart. We find that drive amplitude - a parameter dropped in RWA - is critical for optimizing fidelity and map out high-fidelity regimes. Our results demonstrate the necessity of going beyond RWA in understanding how long-range gates can be realized in DQD qubits, with charge qubits offering considerable advantages in high-fidelity operation.
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Submitted 9 April, 2024;
originally announced April 2024.
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Hybrid quantum systems with artificial atoms in solid state
Authors:
Cleaven Chia,
Ding Huang,
Victor Leong,
Jian Feng Kong,
Kuan Eng Johnson Goh
Abstract:
The development of single-platform qubits, predominant for most of the last few decades, has driven the progress of quantum information technologies but also highlighted the limitations of various platforms. Some inherent issues such as charge/spin noise in materials hinder certain platforms, while increased decoherence upon attempts to scale-up severely impact qubit quality and coupling on others…
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The development of single-platform qubits, predominant for most of the last few decades, has driven the progress of quantum information technologies but also highlighted the limitations of various platforms. Some inherent issues such as charge/spin noise in materials hinder certain platforms, while increased decoherence upon attempts to scale-up severely impact qubit quality and coupling on others. In addition, a universal solution for coherent information transfer between quantum systems remains lacking. By combining one or more qubit platforms, one could potentially create new hybrid platforms that might alleviate significant issues that current single platform qubits suffer from, and in some cases, even facilitate the conversion of static to flying qubits on the same hybrid platform. While nascent, this is an area of rising importance that could shed new light on robust and scalable qubit development and provide new impetus for research directions. Here, we define the requirements for hybrid systems with artificial atoms in solid state, exemplify them with systems that have been proposed or attempted, and conclude with our outlook for such hybrid quantum systems.
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Submitted 7 April, 2024;
originally announced April 2024.
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Driving non-trivial quantum phases in conventional semiconductors with intense excitonic fields
Authors:
Vivek Pareek,
David R. Bacon,
Xing Zhu,
Yang-Hao Chan,
Fabio Bussolotti,
Nicholas S. Chan,
Joel Pérez Urquizo,
Kenji Watanabe,
Takashi Taniguchi,
Michael K. L. Man,
Julien Madéo,
Diana Y. Qiu,
Kuan Eng Johnson Goh,
Felipe H. da Jornada,
Keshav M. Dani
Abstract:
Inducing novel quantum phases and topologies in materials using intense light fields is a key objective of modern condensed matter physics, but nonetheless faces significant experimental challenges. Alternately, theory predicts that in the dense limit, excitons - collective excitations composed of Coulomb-bound electron-hole pairs - could also drive exotic quantum phenomena. However, the direct ob…
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Inducing novel quantum phases and topologies in materials using intense light fields is a key objective of modern condensed matter physics, but nonetheless faces significant experimental challenges. Alternately, theory predicts that in the dense limit, excitons - collective excitations composed of Coulomb-bound electron-hole pairs - could also drive exotic quantum phenomena. However, the direct observation of these phenomena requires the resolution of electronic structure in momentum space in the presence of excitons, which became possible only recently. Here, using time- and angle-resolved photoemission spectroscopy of an atomically thin semiconductor in the presence of a high-density of resonantly and coherently photoexcited excitons, we observe the Bardeen-Cooper-Schrieffer (BCS) excitonic state - analogous to the Cooper pairs of superconductivity. We see the valence band transform from a conventional paraboloid into a Mexican-hat like Bogoliubov dispersion - a hallmark of the excitonic insulator phase; and we observe the recently predicted giant exciton-driven Floquet effects. Our work realizes the promise that intense bosonic fields, other than photons, can also drive novel quantum phenomena and phases in materials.
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Submitted 13 March, 2024;
originally announced March 2024.
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Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
Authors:
Chit Siong Lau,
Sarthak Das,
Ivan A. Verzhbitskiy,
Ding Huang,
Yiyu Zhang,
Teymour Talha-Dean,
Yiyu Zhang,
Wei Fu,
Dasari Venkatakrishnarao,
Kuan Eng Johnson Goh
Abstract:
Despite over a decade of intense research efforts, the full potential of two-dimensional transition metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications Conventional dielectric integration techniques for bulk semiconductors are difficult t…
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Despite over a decade of intense research efforts, the full potential of two-dimensional transition metal dichalcogenides continues to be limited by major challenges. The lack of compatible and scalable dielectric materials and integration techniques restrict device performances and their commercial applications Conventional dielectric integration techniques for bulk semiconductors are difficult to adapt for atomically thin two-dimensional materials. This review provides a brief introduction into various common and emerging dielectric synthesis and integration techniques and discusses their applicability for 2D transition metal dichalcogenides. Dielectric integration for various applications is reviewed in subsequent sections including nanoelectronics, optoelectronics, flexible electronics, valleytronics, biosensing, quantum information processing, and quantum sensing. For each application, we introduce basic device working principles, discuss the specific dielectric requirements, review current progress, present key challenges, and offer insights into future prospects and opportunities.
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Submitted 4 February, 2024;
originally announced February 2024.
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Symmetry breaking and spin-orbit coupling for individual vacancy-induced in-gap states in MoS2 monolayers
Authors:
Thasneem Aliyar,
Hongyang Ma,
Radha Krishnan,
Gagandeep Singh,
Bi Qi Chong,
Yitao Wang,
Ivan Verzhbitskiy,
Calvin Pei Yu Wong,
Kuan Eng Johnson Goh,
Ze Xiang Shen,
Teck Seng Koh,
Rajib Rahman,
Bent Weber
Abstract:
Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulphur vacancies in molybdenum disulphide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. S…
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Spins confined to point defects in atomically-thin semiconductors constitute well-defined atomic-scale quantum systems that are being explored as single photon emitters and spin qubits. Here, we investigate the in-gap electronic structure of individual sulphur vacancies in molybdenum disulphide (MoS2) monolayers using resonant tunneling scanning probe spectroscopy in the Coulomb blockade regime. Spectroscopic mapping of defect wavefunctions reveals an interplay of local symmetry breaking by a charge-state dependent Jahn-Teller lattice distortion that, when combined with strong (~100 meV) spin-orbit coupling, leads to a locking of an unpaired spin-1/2 magnetic moment to the lattice at low temperature, susceptible to lattice strain. Our results provide new insights into spin and electronic structure of vacancy induced in-gap states towards their application as electrically and optically addressable quantum systems.
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Submitted 20 February, 2024; v1 submitted 2 February, 2024;
originally announced February 2024.
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Nano-ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots
Authors:
Teymour Talha-Dean,
Yaoju Tarn,
Subhrajit Mukherjee,
John Wellington John,
Ding Huang,
Ivan A. Verzhbitskiy,
Dasari Venkatakrishnarao,
Sarthak Das,
Rainer Lee,
Abhishek Mishra,
Shuhua Wang,
Yee Sin Ang,
Kuan Eng Johnson Goh,
Chit Siong Lau
Abstract:
Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and offers possibilities for designer device applications. However, resist residue from fabrication processes is a major limitation. Resulting disordered interfaces degrade device performance and mask underlying transport phy…
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Assembling two-dimensional van der Waals layered materials into heterostructures is an exciting development that sparked the discovery of rich correlated electronic phenomena and offers possibilities for designer device applications. However, resist residue from fabrication processes is a major limitation. Resulting disordered interfaces degrade device performance and mask underlying transport physics. Conventional cleaning processes are inefficient and can cause material and device damage. Here, we show that thermal scanning probe based cleaning can effectively eliminate resist residue to recover pristine material surfaces. Our technique is compatible at both the material- and device-level, and we demonstrate the significant improvement in the electrical performance of 2D WS2 transistors. We also demonstrate the cleaning of van der Waals heterostructures to achieve interfaces with low disorder. This enables the electrical formation and control of quantum dots that can be tuned from macroscopic current flow to the single-electron tunnelling regime. Such material processing advances are crucial for constructing high-quality vdW heterostructures that are important platforms for fundamental studies and building blocks for quantum and nano-electronics applications.
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Submitted 2 February, 2024;
originally announced February 2024.
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Open-orbit induced low field extremely large magnetoresistance in graphene/h-BN superlattices
Authors:
Zihao Wang,
Pablo M. Perez-Piskunow,
Calvin Pei Yu Wong,
Matthew Holwill,
Jiawei Liu,
Wei Fu,
Junxiong Hu,
T Taniguchi,
K Watanabe,
Ariando Ariando,
Lin Li,
Kuan Eng Johnson Goh,
Stephan Roche,
Jeil Jung,
Konstantin Novoselov,
Nicolas Leconte
Abstract:
We report intriguing and hitherto overlooked low-field room temperature extremely large magnetoresistance (XMR) patterns in graphene/hexagonal boron nitride (h-BN) superlattices that emerge due to the existence of open orbits within each miniband. This finding is set against the backdrop of the experimental discovery of the Hofstadter butterfly in moir superlattices, which has sparked considerable…
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We report intriguing and hitherto overlooked low-field room temperature extremely large magnetoresistance (XMR) patterns in graphene/hexagonal boron nitride (h-BN) superlattices that emerge due to the existence of open orbits within each miniband. This finding is set against the backdrop of the experimental discovery of the Hofstadter butterfly in moir superlattices, which has sparked considerable interest in the fractal quantum Hall regime. To cope with the challenge of deciphering the low magnetic field dynamics of moir minibands, we utilize a novel semi-classical calculation method, grounded in zero-field Fermi contours, to predict the nontrivial behavior of the Landau-level spectrum. This is compared with fully quantum simulations, enabling an in-depth and contrasted analysis of transport measurements in high-quality graphene-hBN superlattices. Our results not only highlight the primary observation of the open-orbit induced XMR in this system but also shed new light on other intricate phenomena. These include the nuances of single miniband dynamics, evident through Lifshitz transitions, and the complex interplay of semiclassical and quantum effects between these minibands. Specifically, we document transport anomalies linked to trigonal warping, a semiclassical deviation from the expected linear characteristics of Landau levels, and magnetic breakdown phenomena indicative of quantum tunneling, all effects jointly contributing to the intricacies of a rich electronic landscape uncovered at low magnetic fields.
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Submitted 12 December, 2023;
originally announced December 2023.
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Engineering Perovskite Emissions via Optical Quasi-Bound-States-in-the-Continuum
Authors:
Evelin Csányi,
Yan Liu,
Soroosh Daqiqeh Rezaei,
Henry Yit Loong Lee,
Febiana Tjiptoharsono,
Zackaria Mahfoud,
Sergey Gorelik,
Xiaofei Zhao,
Li Jun Lim,
Di Zhu,
Jing Wu,
Kuan Eng Johnson Goh,
Weibo Gao,
Zhi-Kuang Tan,
Graham Leggett,
Cheng-Wei Qiu,
Zhaogang Dong
Abstract:
Metal halide perovskite quantum dots (PQDs) have emerged as promising materials due to their exceptional photoluminescence (PL) properties. A wide range of applications could benefit from adjustable luminescence properties, while preserving the physical and chemical properties of the PQDs. Therefore, post-synthesis engineering has gained attention recently, involving the use of ion-exchange or ext…
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Metal halide perovskite quantum dots (PQDs) have emerged as promising materials due to their exceptional photoluminescence (PL) properties. A wide range of applications could benefit from adjustable luminescence properties, while preserving the physical and chemical properties of the PQDs. Therefore, post-synthesis engineering has gained attention recently, involving the use of ion-exchange or external stimuli, such as extreme pressure, magnetic and electric fields. Nevertheless, these methods typically suffer from spectrum broadening, intensity quenching or yield multiple bands. Alternatively, photonic antennas can modify the radiative decay channel of perovskites via the Purcell effect, with the largest wavelength shift being 8 nm to date, at an expense of 5-fold intensity loss. Here, we present an optical nanoantenna array with polarization-controlled quasi-bound-states-in-the-continuum (q-BIC) resonances, which can engineer and shift the photoluminescence wavelength over a ~39 nm range and confers a 21-fold emission enhancement of FAPbI3 perovskite QDs. The spectrum is engineered in a non-invasive manner via lithographically defined antennas and the pump laser polarization at ambient conditions. Our research provides a path towards advanced optoelectronic devices, such as spectrally tailored quantum emitters and lasers.
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Submitted 25 June, 2023;
originally announced June 2023.
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Liquid Metal Printed Ultrathin Oxides for Monolayer WS2 Top-Gate Transistors
Authors:
Yiyu Zhang,
Dasari Venkatakrishnarao,
Michel Bosman,
Wei Fu,
Sarthak Das,
Fabio Bussolotti,
Rainer Lee,
Siew Lang Teo,
Ding Huang,
Ivan Verzhbitskiy,
Zhuojun Jiang,
Zhuoling Jiang,
Jian Wei Chai,
Shi Wun Tong,
Zi-En Ooi,
Calvin Pei Yu Wong,
Yee Sin Ang,
Kuan Eng Johnson Goh,
Chit Siong Lau
Abstract:
Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here,…
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Two-dimensional (2D) semiconductors are promising channel materials for continued downscaling of complementary metal-oxide-semiconductor (CMOS) logic circuits. However, their full potential continues to be limited by a lack of scalable high-k dielectrics that can achieve atomically smooth interfaces, small equivalent oxide thicknesses (EOT), excellent gate control, and low leakage currents. Here, we report liquid metal printed ultrathin and scalable Ga2O3 dielectric for 2D electronics and electro-optical devices. We directly visualize the atomically smooth Ga2O3/WS2 interfaces enabled by the conformal nature of liquid metal printing. We demonstrate atomic layer deposition compatibility with high-k Ga2O3/HfO2 top-gate dielectric stacks on chemical vapour deposition grown monolayer WS2, achieving EOTs of ~1 nm and subthreshold swings down to 84.9 mV/dec. Gate leakage currents are well within requirements for ultra-scaled low-power logic circuits. Our results show that liquid metal printed oxides can bridge a crucial gap in scalable dielectric integration of 2D materials for next-generation nano-electronics.
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Submitted 25 October, 2022;
originally announced October 2022.
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Evidence of Spin Frustration in Vanadium Diselenide Monolayer Magnet
Authors:
Ping Kwan Johnny Wong,
Wen Zhang,
Fabio Bussolotti,
Xinmao Yin,
Tun Seng Herng,
Lei Zhang,
Yu Li Huang,
Giovanni Vinai,
Sridevi Krishnamurthi,
Danil W Bukhvalov,
Yu Jie Zheng,
Rebekah Chua,
Alpha T N Diaye,
Simon A. Morton,
Chao-Yao Yang,
Kui-Hon Ou Yang,
Piero Torelli,
Wei Chen,
Kuan Eng Johnson Goh,
Jun Ding,
Minn-Tsong Lin,
Geert Brocks,
Michel P de Jong,
Antonio H Castro Neto,
Andrew Thye Shen Wee
Abstract:
Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption,…
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Monolayer VSe2, featuring both charge density wave and magnetism phenomena, represents a unique van der Waals magnet in the family of metallic two-dimensional transition-metal dichalcogenides (2D-TMDs). Herein, by means of in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, direct spectroscopic signatures are established, that identify the metallic 1T-phase and vanadium 3d1 electronic configuration in monolayer VSe2 grown on graphite by molecular-beam epitaxy. Element-specific X-ray magnetic circular dichroism, complemented with magnetic susceptibility measurements, further reveals monolayer VSe2 as a frustrated magnet, with its spins exhibiting subtle correlations, albeit in the absence of a long-range magnetic order down to 2 K and up to a 7 T magnetic field. This observation is attributed to the relative stability of the ferromagnetic and antiferromagnetic ground states, arising from its atomic-scale structural features, such as rotational disorders and edges. The results of this study extend the current understanding of metallic 2D-TMDs in the search for exotic low-dimensional quantum phenomena, and stimulate further theoretical and experimental studies on van der Waals monolayer magnets.
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Submitted 6 June, 2022;
originally announced June 2022.
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Multi-Band Superconductivity in Strongly Hybridized 1T'-WTe$_2$/NbSe$_2$ Heterostructures
Authors:
Wei Tao,
Zheng Jue Tong,
Anirban Das,
Duc-Quan Ho,
Yudai Sato,
Masahiro Haze,
Junxiang Jia,
K. E. Johnson Goh,
BaoKai Wang,
Hsin Lin,
Arun Bansil,
Shantanu Mukherjee,
Yukio Hasegawa,
Bent Weber
Abstract:
The interplay of topology and superconductivity has become a subject of intense research in condensed matter physics for the pursuit of topologically non-trivial forms of superconducting pairing. An intrinsically normal-conducting material can inherit superconductivity via electrical contact to a parent superconductor via the proximity effect, usually understood as Andreev reflection at the interf…
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The interplay of topology and superconductivity has become a subject of intense research in condensed matter physics for the pursuit of topologically non-trivial forms of superconducting pairing. An intrinsically normal-conducting material can inherit superconductivity via electrical contact to a parent superconductor via the proximity effect, usually understood as Andreev reflection at the interface between the distinct electronic structures of two separate conductors. However, at high interface transparency, strong coupling inevitably leads to changes in the band structure, locally, owing to hybridization of electronic states. Here, we investigate such strongly proximity-coupled heterostructures of monolayer 1T'-WTe$_2$, grown on NbSe$_2$ by van-der-Waals epitaxy. The superconducting local density of states (LDOS), resolved in scanning tunneling spectroscopy down to 500~mK, reflects a hybrid electronic structure, well-described by a multi-band framework based on the McMillan equations which captures the multi-band superconductivity inherent to the NbSe$_2$ substrate and that induced by proximity in WTe$_2$, self-consistently. Our material-specific tight-binding model captures the hybridized heterostructure quantitatively, and confirms that strong inter-layer hopping gives rise to a semi-metallic density of states in the 2D WTe$_2$ bulk, even for nominally band-insulating crystals. The model further accurately predicts the measured order parameter $Δ\simeq 0.6$~meV induced in the WTe$_2$ monolayer bulk, stable beyond a 2~T magnetic field. We believe that our detailed multi-band analysis of the hybrid electronic structure provides a useful tool for sensitive spatial mapping of induced order parameters in proximitized atomically thin topological materials.
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Submitted 10 March, 2022;
originally announced March 2022.
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2022 Roadmap for Materials for Quantum Technologies
Authors:
Christoph Becher,
Weibo Gao,
Swastik Kar,
Christian Marciniak,
Thomas Monz,
John G. Bartholomew,
Philippe Goldner,
Huanqian Loh,
Elizabeth Marcellina,
Kuan Eng Johnson Goh,
Teck Seng Koh,
Bent Weber,
Zhao Mu,
Jeng-Yuan Tsai,
Qimin Yan,
Samuel Gyger,
Stephan Steinhauer,
Val Zwiller
Abstract:
Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturit…
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Quantum technologies are poised to move the foundational principles of quantum physics to the forefront of applications. This roadmap identifies some of the key challenges and provides insights on materials innovations underlying a range of exciting quantum technology frontiers. Over the past decades, hardware platforms enabling different quantum technologies have reached varying levels of maturity. This has allowed for first proof-of-principle demonstrations of quantum supremacy, for example quantum computers surpassing their classical counterparts, quantum communication with reliable security guaranteed by laws of quantum mechanics, and quantum sensors uniting the advantages of high sensitivity, high spatial resolution, and small footprints. In all cases, however, advancing these technologies to the next level of applications in relevant environments requires further development and innovations in the underlying materials. From a wealth of hardware platforms, we select representative and promising material systems in currently investigated quantum technologies. These include both the inherent quantum bit systems as well as materials playing supportive or enabling roles, and cover trapped ions, neutral atom arrays, rare earth ion systems, donors in silicon, color centers and defects in wide-band gap materials, two-dimensional materials and superconducting materials for single-photon detectors. Advancing these materials frontiers will require innovations from a diverse community of scientific expertise, and hence this roadmap will be of interest to a broad spectrum of disciplines.
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Submitted 15 February, 2022;
originally announced February 2022.
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Quantum Transport in Two-Dimensional WS$_2$ with High-Efficiency Carrier Injection Through Indium Alloy Contacts
Authors:
Chit Siong Lau,
Jing Yee Chee,
Yee Sin Ang,
Shi Wun Tong,
Liemao Cao,
Zi-En Ooi,
Tong Wang,
Lay Kee Ang,
Yan Wang,
Manish Chhowalla,
Kuan Eng Johnson Goh
Abstract:
Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer lengt…
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Two-dimensional transition metal dichalcogenides (TMDCs) have properties attractive for optoelectronic and quantum applications. A crucial element for devices is the metal-semiconductor interface. However, high contact resistances have hindered progress. Quantum transport studies are scant as low-quality contacts are intractable at cryogenic temperatures. Here, temperature-dependent transfer length measurements are performed on chemical vapour deposition grown single-layer and bilayer WS$_2$ devices with indium alloy contacts. The devices exhibit low contact resistances and Schottky barrier heights (\sim10 k$Ω$\si{\micro\metre} at 3 K and 1.7 meV). Efficient carrier injection enables high carrier mobilities ($\sim$190 cm$^2$V$^{-1}$s$^{-1}$) and observation of resonant tunnelling. Density functional theory calculations provide insights into quantum transport and properties of the WS$_2$-indium interface. Our results reveal significant advances towards high-performance WS$_2$ devices using indium alloy contacts.
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Submitted 4 February, 2021;
originally announced February 2021.
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A Gaussian Thermionic Emission Model for Analysis of Au/MoS2 Schottky Barrier Devices
Authors:
Calvin Pei Yu Wong,
Cedric Troadec,
Andrew T. S. Wee,
Kuan Eng Johnson Goh
Abstract:
Schottky barrier inhomogeneities are expected at the metal/TMDC interface and this can impact device performance. However, it is difficult to account for the distribution of interface inhomogeneity as most techniques average over the spot-area of the analytical tool, or the entire device measured for electrical I-V measurements. Commonly used models to extract Schottky barrier heights (SBH) neglec…
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Schottky barrier inhomogeneities are expected at the metal/TMDC interface and this can impact device performance. However, it is difficult to account for the distribution of interface inhomogeneity as most techniques average over the spot-area of the analytical tool, or the entire device measured for electrical I-V measurements. Commonly used models to extract Schottky barrier heights (SBH) neglect or fail to account for such inhomogeneities, which can lead to the extraction of incorrect SBH and Richardson constants. Here, we show that a gaussian modified thermionic emission model gives the best fit to experimental I-V-T data of van der Waals Au/p-MoS2 interfaces and allow the deconvolution of the SBH of the defective regions from the pristine region. By the inclusion of a gaussian distributed SBH in the macroscopic I-V-T analysis, we demonstrate that interface inhomogeneities due to defects are deconvoluted and well correlated to the impact on the device behavior across a wide temperature range from room temperature of 300 K down to 120 K. We verified the gaussian thermionic model across two different types of p-MoS2 (geological and synthetic), and finally compared the macroscopic SBH with the results of a nanoscopic technique, ballistic hole emission microscopy (BHEM). The results obtained using BHEM were consistent with the pristine Au/p-MoS2 SBH extracted from the gaussian modified thermionic emission model over hundreds of nanometers. Our findings show that the inclusion of Schottky barrier inhomogeneities in the analysis of I-V-T data is important to elucidate the impact of defects (e.g. grain boundaries, metallic impurities, etc.) and hence their influence on device behavior. We also find that the Richardson constant, a material specific constant typically treated as merely a fitting constant, is an important parameter to check for the validity of the transport model.
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Submitted 10 August, 2020;
originally announced August 2020.
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Tuning Conductivity Type in Monolayer WS2 and MoS2 by Sulfur Vacancies
Authors:
Jing Yang,
Fabio Bussolotti,
Hiroyo Kawai,
Kuan Eng Johnson Goh
Abstract:
While n-type semiconductor behavior appears to be more common in as-prepared two-dimensional (2D) transition metal dichalcogenides (TMDCs), substitutional doping with acceptor atoms is typically required to tune the conductivity to p-type in order to facilitate their potential application in different devices. Here, we report a systematic study on the equivalent electrical "doping" effect of - sin…
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While n-type semiconductor behavior appears to be more common in as-prepared two-dimensional (2D) transition metal dichalcogenides (TMDCs), substitutional doping with acceptor atoms is typically required to tune the conductivity to p-type in order to facilitate their potential application in different devices. Here, we report a systematic study on the equivalent electrical "doping" effect of - single sulfur vacancies (V1S) in monolayer WS2 and MoS2 by studying the interface interaction of WS2-Au and MoS2-Au contacts. Based on our first principles calculations, we found that the V1S can significantly alter the semiconductor behavior of both monolayer WS2 and MoS2 so that they can exhibit the character of electron acceptor (p-type) as well as electron donor (n-type) when they are contacted with gold. For relatively low V1S densities (approximately < 7% for MoS2 and < 3% for WS2), the monolayer TMDC serves as electron acceptor. As the V1S density increases beyond the threshold densities, the MoS2 and WS2 play the role of electron donor. The significant impact V1S can have on monolayer WS2 and MoS2 may be useful for engineering its electrical behavior and offers an alternative way to tune the semiconductor TMDCs to exhibit either n-type or p-type behavior.
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Submitted 7 July, 2020;
originally announced July 2020.
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Toward Valley-coupled Spin Qubits
Authors:
Kuan Eng Johnson Goh,
Fabio Bussolotti,
Chit Siong Lau,
Dharmraj Kotekar-Patil,
Zi En Ooi,
Jingyee Chee
Abstract:
The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid-state spin qubits as residual spins from substrate, dielectri…
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The bid for scalable physical qubits has attracted many possible candidate platforms. In particular, spin-based qubits in solid-state form factors are attractive as they could potentially benefit from processes similar to those used for conventional semiconductor processing. However, material control is a significant challenge for solid-state spin qubits as residual spins from substrate, dielectric, electrodes or contaminants from processing contribute to spin decoherence. In the recent decade, valleytronics has seen a revival due to the discovery of valley-coupled spins in monolayer transition metal dichalcogenides. Such valley-coupled spins are protected by inversion asymmetry and time-reversal symmetry and are promising candidates for robust qubits. In this report, the progress toward building such qubits is presented. Following an introduction to the key attractions in fabricating such qubits, an up-to-date brief is provided for the status of each key step, highlighting advancements made and/or outstanding work to be done. This report concludes with a perspective on future development highlighting major remaining milestones toward scalable spin-valley qubits.
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Submitted 22 April, 2020; v1 submitted 13 April, 2020;
originally announced April 2020.
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Evidence for metallic 1T phase, 3d1 electronic configuration and charge density wave order in molecular-beam epitaxy grown monolayer VTe2
Authors:
Ping Kwan Johnny Wong,
Wen Zhang,
Jun Zhou,
Fabio Bussolotti,
Xinmao Yin,
Lei Zhang,
Alpha T. NDiaye,
Simon A Morton,
Wei Chen,
Kuan Eng Johnson Goh,
Michel P de Jong,
Yuan Ping Feng,
Andrew Thye Shen Wee
Abstract:
We present a combined experimental and theoretical study of monolayer VTe2 grown on highly oriented pyrolytic graphite by molecular-beam epitaxy. Using various in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, together with theoretical analysis by density functional theor…
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We present a combined experimental and theoretical study of monolayer VTe2 grown on highly oriented pyrolytic graphite by molecular-beam epitaxy. Using various in-situ microscopic and spectroscopic techniques, including scanning tunneling microscopy/spectroscopy, synchrotron X-ray and angle-resolved photoemission, and X-ray absorption, together with theoretical analysis by density functional theory calculations, we demonstrate direct evidence of the metallic 1T phase and 3d1 electronic configuration in monolayer VTe2 that also features a (4 x 4) charge density wave order at low temperatures. In contrast to previous theoretical predictions, our element-specific characterization by X-ray magnetic circular dichroism rules out a ferromagnetic order intrinsic to the monolayer. Our findings provide essential knowledge necessary for understanding this interesting yet less explored metallic monolayer in the emerging family of van der Waals magnets.
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Submitted 14 July, 2019;
originally announced July 2019.
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Coulomb blockade in Etched Single and Few Layer MoS2 Nanoribbons
Authors:
Dharmraj Kotekar-Patil,
Jie Deng,
Swee Liang Wong,
Kuan Eng Johnson Goh
Abstract:
Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low temperature electron transport through etched 50-70nm MoS2 nanoribbons showing current oscillations as a function of gate voltage. On further investigations current through the device forms diamond shaped domains as…
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Confinement in two-dimensional transition metal dichalcogenides is an attractive platform for trapping single charge and spins for quantum information processing. Here, we present low temperature electron transport through etched 50-70nm MoS2 nanoribbons showing current oscillations as a function of gate voltage. On further investigations current through the device forms diamond shaped domains as a function of source-drain and gate voltage. We associate these current oscillations and diamond shaped current domains with Coulomb blockade due to single electron tunneling through a quantum dot formed in the MoS2 nanoribbon. From the size of the Coulomb diamond, we estimate the quantum dot size as small as 10-35nm. We discuss the possible origins of quantum dot in our nanoribbon device and prospects to control or engineer the quantum dot in such etched MoS2 nanoribbons which can be a promising platform for spin-valley qubits in two-dimensional transition metal dichalcogenides.
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Submitted 15 April, 2019;
originally announced April 2019.
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Single layer MoS2 nanoribbon field effect transistor
Authors:
D. Kotekar-Patil,
J. Deng,
S. L. Wong,
Chit Siong Lau,
Kuan Eng Johnson Goh
Abstract:
We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5V/dec using a global backgate. Moreover, we measure a high curr…
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We study field effect transistor characteristics in etched single layer MoS2 nanoribbon devices of width 50nm with ohmic contacts. We employ a SF6 dry plasma process to etch MoS2 nanoribbons using low etching (RF) power allowing very good control over etching rate. Transconductance measurements reveal a steep sub-threshold slope of 3.5V/dec using a global backgate. Moreover, we measure a high current density of 38 uA/um resulting in high on/off ratio of the order of 10^5. We observe mobility reaching as high as 50 cm^2/V.s with increasing source-drain bias.
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Submitted 4 November, 2018;
originally announced November 2018.
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Low Temperature Nanoscale Electronic Transport on the MoS_2 surface
Authors:
R. Thamankar,
T. L. Yap,
K. E. J. Goh,
C. Troadec,
C. Joachim
Abstract:
Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling contact to measure the surface current-voltage characteristics. The separation between the tips is controllably varied and measured using a high resolution sca…
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Two-probe electronic transport measurements on a Molybdenum Disulphide (MoS_2) surface were performed at low temperature (30K) under ultra-high vacuum conditions. Two scanning tunneling microscope tips were precisely positioned in tunneling contact to measure the surface current-voltage characteristics. The separation between the tips is controllably varied and measured using a high resolution scanning electron microscope. The MoS_2 surface shows a surface electronic gap (E_S) of 1.4eV measured at a probe separation of 50nm. Furthermore, the two- probe resistance measured outside the electronic gap shows 2D-like behavior with the two-probe separation.
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Submitted 14 August, 2013;
originally announced August 2013.
