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Spin and Orbital Spectroscopy in the Absence of Coulomb Blockade in Lead Telluride Nanowire Quantum Dots
Authors:
M. Gomanko,
E. J. de Jong,
Y. Jiang,
S. G. Schellingerhout,
E. P. A. M. Bakkers,
S. M. Frolov
Abstract:
We investigate quantum dots in semiconductor PbTe nanowire devices. Due to the accessibility of ambipolar transport in PbTe, quantum dots can be occupied both with electrons and holes. Owing to a very large dielectric constant in PbTe of order 1000, we do not observe Coulomb blockade which typically obfuscates the orbital and spin spectra. We extract large and highly anisotropic effective Lande g-…
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We investigate quantum dots in semiconductor PbTe nanowire devices. Due to the accessibility of ambipolar transport in PbTe, quantum dots can be occupied both with electrons and holes. Owing to a very large dielectric constant in PbTe of order 1000, we do not observe Coulomb blockade which typically obfuscates the orbital and spin spectra. We extract large and highly anisotropic effective Lande g-factors, in the range 20-44. The absence of Coulomb blockade allows direct readout, at zero source-drain bias, of spin-orbit hybridization energies of up to 600 microelectronvolt. These spin properties make PbTe nanowires, the recently synthesized members of group IV-VI materials family, attractive as a materials platform for quantum technology, such as spin and topological qubits.
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Submitted 22 May, 2022; v1 submitted 25 November, 2021;
originally announced November 2021.
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Growth of PbTe nanowires by Molecular Beam Epitaxy
Authors:
Sander G. Schellingerhout,
Eline J. de Jong,
Maksim Gomanko,
Xin Guan,
Yifan Jiang,
Max S. M. Hoskam,
Sebastian Koelling,
Oussama Moutanabbir,
Marcel A. Verheijen,
Sergey M. Frolov,
Erik P. A. M. Bakkers
Abstract:
Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family that has significant untapped potential for exploration. Due to its high electron mobility, strong spin-orbit coupling and ultrahigh dielectric constant it can hos…
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Advances in quantum technology may come from the discovery of new materials systems that improve the performance or allow for new functionality in electronic devices. Lead telluride (PbTe) is a member of the group IV-VI materials family that has significant untapped potential for exploration. Due to its high electron mobility, strong spin-orbit coupling and ultrahigh dielectric constant it can host few-electron quantum dots and ballistic quantum wires with opportunities for control of electron spins and other quantum degrees of freedom. Here, we report the fabrication of PbTe nanowires by molecular beam epitaxy. We achieve defect-free single crystalline PbTe with large aspect ratios up to 50 suitable for quantum devices. Furthermore, by fabricating a single nanowire field effect transistor, we attain bipolar transport, extract the bandgap and observe Fabry-Perot oscillations of conductance, a signature of quasiballistic transmission.
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Submitted 25 October, 2021;
originally announced October 2021.
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Non-Majorana states yield nearly quantized conductance in superconductor-semiconductor nanowire devices
Authors:
P. Yu,
J. Chen,
M. Gomanko,
G. Badawy,
E. P. A. M. Bakkers,
K. Zuo,
V. Mourik,
S. M. Frolov
Abstract:
Conductance at zero source-drain voltage bias in InSb nanowire/NbTiN superconductor devices exhibits peaks that are close to a quantized value of $2e^2/h$. The nearly quantized resonances evolve in the tunnel barrier strength, magnetic field and magnetic field orientation in a way consistent with Majorana zero modes. Our devices feature two tunnel probes on both ends of the nanowire separated by a…
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Conductance at zero source-drain voltage bias in InSb nanowire/NbTiN superconductor devices exhibits peaks that are close to a quantized value of $2e^2/h$. The nearly quantized resonances evolve in the tunnel barrier strength, magnetic field and magnetic field orientation in a way consistent with Majorana zero modes. Our devices feature two tunnel probes on both ends of the nanowire separated by a 400 nm nanowire segment covered by the superconductor. We only find nearly quantized zero bias peaks localized to one end of the nanowire, while conductance dips are observed for the same parameters on the other end. This undermines the Majorana explanation as Majorana modes must come in pairs. We do identify states delocalized from end to end near zero magnetic field and at higher electron density, which is not in the basic Majorana regime. We lay out procedures for assessing the nonlocality of subgap wavefunctions and provide a classification of nanowire bound states based on their localization.
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Submitted 18 April, 2020;
originally announced April 2020.
