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Hyperspectral electromechanical imaging at the nanoscale: Dynamical backaction, dissipation and quantum fluctuations
Authors:
Clément Chardin,
Sébastien Pairis,
Sabine Douillet,
Moïra Hocevar,
Julien Claudon,
Jean-Philippe Poizat,
Ludovic Bellon,
Pierre Verlot
Abstract:
We report a new scanning nanomechanical noise microscopy platform enabling to both heat and acquire the fluctuations of mechanical nanostructures with nanometric resolution. We use this platform to image the thermally activated nanomechanical dynamics of a model system consisting of a $40\,\mathrm{nm}$ diameter single-defect nanowire, while scanning a localized heat source across its surface. We d…
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We report a new scanning nanomechanical noise microscopy platform enabling to both heat and acquire the fluctuations of mechanical nanostructures with nanometric resolution. We use this platform to image the thermally activated nanomechanical dynamics of a model system consisting of a $40\,\mathrm{nm}$ diameter single-defect nanowire, while scanning a localized heat source across its surface. We develop a thermal backaction model, which we use to demonstrate a close connection between the structure of the nanowire, its thermal response, its dissipation and its fluctuations. We notably show that the defect behaves as a single fluctuation hub, whose e-beam excitation yields a far off-equilibrium vibrational state, largely dominated by the quantum fluctuations of the heating source. Our platform is of interest for future quantitative investigation of fundamental nanoscale dynamical phenomena, and appears as a new playground for investigating quantum thermodynamics in the strongly dissipative regime and at room temperature.
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Submitted 30 July, 2024;
originally announced July 2024.
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Dual-adatom diffusion-limited growth model for compound nanowires: Application to InAs nanowires
Authors:
Danylo Mosiiets,
Yann Genuist,
Joël Cibert,
Edith Bellet-Amalric,
Moïra Hocevar
Abstract:
We propose a dual-adatom diffusion-limited model for the growth of compound semiconductor nanowires via the vapor-liquid-solid or the vapour-solid-solid mechanisms. The growth is catalyzed either by a liquid or a solid nanoparticle. We validate the model using experimental data from the growth of InAs nanowires catalyzed by a gold nanoparticle in a molecular beam epitaxy reactor. Initially, we det…
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We propose a dual-adatom diffusion-limited model for the growth of compound semiconductor nanowires via the vapor-liquid-solid or the vapour-solid-solid mechanisms. The growth is catalyzed either by a liquid or a solid nanoparticle. We validate the model using experimental data from the growth of InAs nanowires catalyzed by a gold nanoparticle in a molecular beam epitaxy reactor. Initially, we determine the parameters (diffusion lengths, flux to the seed, Kelvin effect) that describe the growth of nanowires under an excess of one of the two beams (for instance, group III or group V atoms). The diffusion-limited model calculates the growth rate resulting from the current of atoms reaching the seed. Our dual-adatom diffusion-limited model calculates for a compound semiconductor, the instantaneous growth rate resulting from the smallest current of the two types of atoms at a given time. We apply the model to analyze the length-radius dependence of our InAs nanowires for growth conditions covering the transition from the As-limited to the In-limited regime. Finally, the model also describes the complex dependence of the transition between both regimes on the nanowire radius and length. This approach is generic and can be applied to study the growth of any compound semiconductor nanowires.
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Submitted 29 January, 2024;
originally announced January 2024.
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"Smoking gun" signatures of topological milestones in trivial materials by measurement fine-tuning and data postselection
Authors:
S. M. Frolov,
P. Zhang,
B. Zhang,
Y. Jiang,
S. Byard,
S. R. Mudi,
J. Chen,
A. -H. Chen,
M. Hocevar,
M. Gupta,
C. Riggert,
V. S. Pribiag
Abstract:
Exploring the topology of electronic bands is a way to realize new states of matter with possible implications for information technology. Because bands cannot always be observed directly, a central question is how to tell that a topological regime has been achieved. Experiments are often guided by a prediction of a unique signal or a pattern, called "the smoking gun". Examples include peaks in co…
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Exploring the topology of electronic bands is a way to realize new states of matter with possible implications for information technology. Because bands cannot always be observed directly, a central question is how to tell that a topological regime has been achieved. Experiments are often guided by a prediction of a unique signal or a pattern, called "the smoking gun". Examples include peaks in conductivity, microwave resonances, and shifts in interference fringes. However, many condensed matter experiments are performed on relatively small, micron or nanometer-scale, specimens. These structures are in the so-called mesoscopic regime, between atomic and macroscopic physics, where phenomenology is particularly rich. In this paper, we demonstrate that the trivial effects of quantum confinement, quantum interference and charge dynamics in nanostructures can reproduce accepted smoking gun signatures of triplet supercurrents, Majorana modes, topological Josephson junctions and fractionalized particles. The examples we use correspond to milestones of topological quantum computing: qubit spectroscopy, fusion and braiding. None of the samples we use are in the topological regime. The smoking gun patterns are achieved by fine-tuning during data acquisition and by subsequent data selection to pick non-representative examples out of a fluid multitude of similar patterns that do not generally fit the "smoking gun" designation. Building on this insight, we discuss ways that experimentalists can rigorously delineate between topological and non-topological effects, and the effects of fine-tuning by deeper analysis of larger volumes of data.
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Submitted 17 September, 2023;
originally announced September 2023.
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Role of a capping layer on the crystalline structure of Sn thin films grown at cryogenic temperatures on InSb substrates
Authors:
A. -H. Chen,
C. P. Dempsey,
M. Pendharkar,
A. Sharma,
B. Zhang,
S. Tan,
L. Bellon,
S. M. Frolov,
C. J. Palmstrom,
E. Bellet-Amalric,
M. Hocevar
Abstract:
Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a drawback arises when these films return to room temperature, as they tend to undergo dewetting. This issue is mitigated by capping the films with an amorphous layer. In this study, we examined the impact of different in…
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Metal deposition with cryogenic cooling is widely utilized in the condensed matter community for producing ultra-thin epitaxial superconducting layers on semiconductors. However, a drawback arises when these films return to room temperature, as they tend to undergo dewetting. This issue is mitigated by capping the films with an amorphous layer. In this study, we examined the impact of different in-situ fabricated caps on the structural characteristics of Sn thin films deposited at 80 K on InSb substrates. Regardless of the type of capping, we observed that the films remained smooth upon returning to room temperature and were epitaxial on InSb in the cubic Sn ($α$-Sn) phase. However, we noted a correlation between alumina capping with an electron beam evaporator and an increased presence of tetragonal Sn ($β$-Sn) grains. This suggests that heating from the alumina source may contribute to a partial phase transition in the Sn layer. The existence of the $β$-Sn phase induced superconducting behavior of the films by percolation effect. This study highlights the potential for modifying the structural properties of cryogenic Sn thin films through in-situ capping, paving the way for precise control in the production of superconducting Sn films for integration into quantum computing platforms.
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Submitted 18 September, 2023; v1 submitted 29 January, 2023;
originally announced January 2023.
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First Principles Assessment of CdTe as a Tunnel Barrier at the $\mathbfα$-Sn/InSb Interface
Authors:
Malcolm J. A. Jardine,
Derek Dardzinski,
Maituo Yu,
Amrita Purkayastha,
A. -H. Chen,
Yu-Hao Chang,
Aaron Engel,
Vladimir N. Strocov,
Moïra Hocevar,
Chris J. Palmstrøm,
Sergey M. Frolov,
Noa Marom
Abstract:
Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as $β$-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, a…
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Majorana zero modes, with prospective applications in topological quantum computing, are expected to arise in superconductor/semiconductor interfaces, such as $β$-Sn and InSb. However, proximity to the superconductor may also adversely affect the semiconductor's local properties. A tunnel barrier inserted at the interface could resolve this issue. We assess the wide band gap semiconductor, CdTe, as a candidate material to mediate the coupling at the lattice-matched interface between $α$-Sn and InSb. To this end, we use density functional theory (DFT) with Hubbard U corrections, whose values are machine-learned via Bayesian optimization (BO) [npj Computational Materials 6, 180 (2020)]. The results of DFT+U(BO) are validated against angle resolved photoemission spectroscopy (ARPES) experiments for $α$-Sn and CdTe. For CdTe, the z-unfolding method [Advanced Quantum Technologies, 5, 2100033 (2022)] is used to resolve the contributions of different $k_z$ values to the ARPES. We then study the band offsets and the penetration depth of metal-induced gap states (MIGS) in bilayer interfaces of InSb/$α$-Sn, InSb/CdTe, and CdTe/$α$-Sn, as well as in tri-layer interfaces of InSb/CdTe/$α$-Sn with increasing thickness of CdTe. We find that 16 atomic layers (3.5 nm) of CdTe can serve as a tunnel barrier, effectively shielding the InSb from MIGS from the $α$-Sn. This may guide the choice of dimensions of the CdTe barrier to mediate the coupling in semiconductor-superconductor devices in future Majorana zero modes experiments.
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Submitted 7 January, 2023;
originally announced January 2023.
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Missing odd-order Shapiro steps do not uniquely indicate fractional Josephson effect
Authors:
P. Zhang,
S. Mudi,
M. Pendharkar,
J. S. Lee,
C. P. Dempsey,
A. P. McFadden,
S. D. Harrington,
J. T. Dong,
H. Wu,
A. -H. Chen,
M. Hocevar,
C. J. Palmstrøm,
S. M. Frolov
Abstract:
Topological superconductivity is expected to spur Majorana zero modes -- exotic states that are also considered a quantum technology asset. Fractional Josephson effect is their manifestation in electronic transport measurements, often under microwave irradiation. A fraction of induced resonances, known as Shapiro steps, should vanish, in a pattern that signifies the presence of Majorana modes. Her…
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Topological superconductivity is expected to spur Majorana zero modes -- exotic states that are also considered a quantum technology asset. Fractional Josephson effect is their manifestation in electronic transport measurements, often under microwave irradiation. A fraction of induced resonances, known as Shapiro steps, should vanish, in a pattern that signifies the presence of Majorana modes. Here we report patterns of Shapiro steps expected in topological Josephson junctions, such as the missing first Shapiro step, or several missing odd-order steps. But our junctions, which are InAs quantum wells with Al contacts, are studied near zero magnetic field, meaning that they are not in the topological regime. We also observe other patterns such as missing even steps and several missing steps in a row, not relevant to topological superconductivity. Potentially responsible for our observations is rounding of not fully developed steps superimposed on non-monotonic resistance versus voltage curves, but several origins may be at play. Our results demonstrate that any single pattern, even striking, cannot uniquely identify topological superconductivity, and a multifactor approach is necessary to unambiguously establish this important phenomenon.
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Submitted 16 November, 2022;
originally announced November 2022.
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Large Second-Order Josephson Effect in Planar Superconductor-Semiconductor Junctions
Authors:
P. Zhang,
A. Zarassi,
L. Jarjat,
V. Van de Sande,
M. Pendharkar,
J. S. Lee,
C. P. Dempsey,
A. P. McFadden,
S. D. Harrington,
J. T. Dong,
H. Wu,
A. -H. Chen,
M. Hocevar,
C. J. Palmstrøm,
S. M. Frolov
Abstract:
We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several experiments, we conclude that the junctions exhibit an unusually large second-order Josephson harmonic, the $\sin(2\varphi)$ term. First, superconducting quantum interference devices (dc-SQUIDs) show half-periodic oscillations, tunable by gat…
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We investigate the current-phase relations of Al/InAs-quantum well planar Josephson junctions fabricated using nanowire shadowing technique. Based on several experiments, we conclude that the junctions exhibit an unusually large second-order Josephson harmonic, the $\sin(2\varphi)$ term. First, superconducting quantum interference devices (dc-SQUIDs) show half-periodic oscillations, tunable by gate voltages as well as magnetic flux. Second, Josephson junction devices exhibit kinks near half-flux quantum in supercurrent diffraction patterns. Third, half-integer Shapiro steps are present in the junctions. Similar phenomena are observed in Sn/InAs quantum well devices. We perform data fitting to a numerical model with a two-component current phase relation. Analysis including a loop inductance suggests that the sign of the second harmonic term is negative. The microscopic origins of the observed effect remain to be understood. We consider alternative explanations which can account for some but not all of the evidence.
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Submitted 19 November, 2023; v1 submitted 14 November, 2022;
originally announced November 2022.
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Planar Josephson Junctions Templated by Nanowire Shadowing
Authors:
P. Zhang,
A. Zarassi,
M. Pendharkar,
J. S. Lee,
L. Jarjat,
V. Van de Sande,
B. Zhang,
S. Mudi,
H. Wu,
S. Tan,
C. P. Dempsey,
A. P. McFadden,
S. D. Harrington,
B. Shojaei,
J. T. Dong,
A. -H. Chen,
M. Hocevar,
C. J. Palmstrøm,
S. M. Frolov
Abstract:
More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technol…
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More and more materials, with a growing variety of properties, are built into electronic devices. This is motivated both by increased device performance and by the studies of materials themselves. An important type of device is a Josephson junction based on the proximity effect between a quantum material and a superconductor, useful for fundamental research as well as for quantum and other technologies. When both junction contacts are placed on the same surface, such as a two-dimensional material, the junction is called ``planar". One outstanding challenge is that not all materials are amenable to the standard planar junction fabrication. The device quality, rather than the intrinsic characteristics, may be defining the results. Here, we introduce a technique in which nanowires are placed on the surface and act as a shadow mask for the superconductor. The advantages are that the smallest dimension is determined by the nanowire diameter and does not require lithography, and that the junction is not exposed to chemicals such as etchants. We demonstrate this method with an InAs quantum well, using two superconductors - Al and Sn, and two semiconductor nanowires - InAs and InSb. The junctions exhibit critical current levels consistent with transparent interfaces and uniform width. We show that the template nanowire can be operated as a self-aligned electrostatic gate. Beyond single junctions, we create SQUIDs with two gate-tunable junctions. We suggest that our method can be used for a large variety of quantum materials including van der Waals layers, topological insulators, Weyl semimetals and future materials for which proximity effect devices is a promising research avenue.
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Submitted 8 November, 2022;
originally announced November 2022.
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Parity-preserving and magnetic field resilient superconductivity in indium antimonide nanowires with tin shells
Authors:
M. Pendharkar,
B. Zhang,
H. Wu,
A. Zarassi,
P. Zhang,
C. P. Dempsey,
J. S. Lee,
S. D. Harrington,
G. Badawy,
S. Gazibegovic,
J. Jung,
A. -H. Chen,
M. A. Verheijen,
M. Hocevar,
E. P. A. M. Bakkers,
C. J. Palmstrøm,
S. M. Frolov
Abstract:
We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard superconducti…
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We study bottom-up grown semiconductor indium antimonide nanowires that are coated with shells of tin. The shells are uniform in thickness. The interface between Sn and InSb is abrupt and without interdiffusion. Devices for transport are prepared by in-situ shadowing of nanowires using nearby nanowires as well as flakes, resulting in etch-free junctions. Tin is found to induce a hard superconducting gap in the range 600-700 micro-eV. Superconductivity persists up to 4 T in magnetic field. A tin island exhibits the coveted two-electron charging effect, a hallmark of charge parity stability. The findings open avenues for superconducting and topological quantum circuits based on new superconductor-semiconductor combinations.
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Submitted 11 December, 2019;
originally announced December 2019.
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Full characterization and modelling of graded interfaces in a high lattice-mismatch axial nanowire heterostructure
Authors:
D. V. Beznasyuk,
P. Stepanov,
J. L. Rouvière,
F. Glas,
M. Verheijen,
J. Claudon,
M. Hocevar
Abstract:
Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties such as photon emission, carrier mobility or piezoelectricity. In a nanowire axial heterostructure featuring a sharp interface, strain is set by the materials lattice mismatch and the nanowire radius. Here, we show that int…
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Controlling the strain level in nanowire heterostructures is critical for obtaining coherent interfaces of high crystalline quality and for the setting of functional properties such as photon emission, carrier mobility or piezoelectricity. In a nanowire axial heterostructure featuring a sharp interface, strain is set by the materials lattice mismatch and the nanowire radius. Here, we show that introducing a graded interface in nanowire heterostructures offers an additional parameter to control strain. For a given interface length and lattice mismatch, we first derive theoretically the maximum nanowire radius below which coherent growth is possible. We validate these findings by growing and characterizing various In(Ga)As/GaAs nanowire heterostructures with graded interfaces. Furthermore, we perform a complete chemical and structural characterization of the interface by combining energy-dispersive X-ray spectroscopy and high resolution transmission electron microscopy. In the case of coherent growth, we directly observe that the mismatch strain relaxes elastically on the side walls of the nanowire around the interface area, while the core of the nanowire remains partially strained. Moreover, our experimental data show good agreement with finite element calculations. This analysis confirms in particular that mechanical strain is largely reduced by interface grading. Overall, our work extends the parameter space for the design of nanowire heterostructures, thus opening new opportunities for nanowire optoelectronics.
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Submitted 3 December, 2019;
originally announced December 2019.
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Erasing odd-parity states in semiconductor quantum dots coupled to superconductors
Authors:
Z. Su,
R. Zitko,
P. Zhang,
H. Wu,
D. Car,
S. R. Plissard,
S. Gazibegovic,
G. H. A. Badawy,
M. Hocevar,
J. Chen,
E. P. A. M. Bakkers,
S. M. Frolov
Abstract:
Quantum dots are gate-defined within InSb nanowires, in proximity to NbTiN superconducting contacts. As the coupling between the dot and the superconductor is increased, the odd-parity occupations become non-discernible (erased) both above and below the induced superconducting gap. Above the gap, conductance in the odd Coulomb valleys increases until the valleys are lifted. Below the gap, Andreev…
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Quantum dots are gate-defined within InSb nanowires, in proximity to NbTiN superconducting contacts. As the coupling between the dot and the superconductor is increased, the odd-parity occupations become non-discernible (erased) both above and below the induced superconducting gap. Above the gap, conductance in the odd Coulomb valleys increases until the valleys are lifted. Below the gap, Andreev bound states undergo quantum phase transitions to singlet ground states at odd occupancy. We observe that the apparent erasure of odd-parity regimes coincides at low-bias and at high-bias. This observation is reproduced in numerical renormalization group simulations, and is explained qualitatively by a competition between Kondo temperature and the induced superconducting gap. In the erased odd-parity regime, the quantum dot exhibits transport features similar to a finite-size Majorana nanowire, drawing parallels between even-odd dot occupations and even-odd one-dimensional subband occupations.
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Submitted 10 April, 2019;
originally announced April 2019.
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Ubiquitous non-Majorana Zero-Bias Conductance Peaks in Nanowire Devices
Authors:
Jun Chen,
Benjamin Woods,
Peng Yu,
Moira Hocevar,
Diana Car,
Sebastien Plissard,
Erik Bakkers,
Tudor Stanescu,
Sergey Frolov
Abstract:
We perform tunneling measurements on indium antimonide nanowire/superconductor hybrid devices fabricated for the studies of Majorana bound states. At finite magnetic field, resonances that strongly resemble Majorana bound states, including zero-bias pinning, become common to the point of ubiquity. Since Majorana bound states are predicted in only a limited parameter range in nanowire devices, we s…
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We perform tunneling measurements on indium antimonide nanowire/superconductor hybrid devices fabricated for the studies of Majorana bound states. At finite magnetic field, resonances that strongly resemble Majorana bound states, including zero-bias pinning, become common to the point of ubiquity. Since Majorana bound states are predicted in only a limited parameter range in nanowire devices, we seek an alternative explanation for the observed zero-bias peaks. With the help of a self-consistent Poission-Schrödinger multiband model developed in parallel, we identify several families of trivial subgap states which overlap and interact, giving rise to a crowded spectrum near zero energy and zero-bias conductance peaks in experiments. These findings advance the search for Majorana bound states through improved understanding of broader phenomena found in superconductor-semiconductor systems.
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Submitted 23 January, 2024; v1 submitted 7 February, 2019;
originally announced February 2019.
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Mirage Andreev spectra generated by mesoscopic leads in nanowire quantum dots
Authors:
Z. Su,
A. Zarassi,
J. -F. Hsu,
P. San-Jose,
E. Prada,
R. Aguado,
E. J. H. Lee,
S. Gazibegovic,
R. Op het Veld,
D. Car,
S. R. Plissard,
M. Hocevar,
M. Pendharkar,
J. S. Lee,
J. A. Logan,
C. J. Palmstrom,
E. P. A. M. Bakkers,
S. M. Frolov
Abstract:
We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used: epitaxial Al/InSb devices exhibit a doubling of tunneling resonances, while in NbTiN/InSb devices Andreev spectra of the dot appear to be replicated multiple times at increasing source-drain bias voltages. In both devices, a mirage of a crowded…
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We study transport mediated by Andreev bound states formed in InSb nanowire quantum dots. Two kinds of superconducting source and drain contacts are used: epitaxial Al/InSb devices exhibit a doubling of tunneling resonances, while in NbTiN/InSb devices Andreev spectra of the dot appear to be replicated multiple times at increasing source-drain bias voltages. In both devices, a mirage of a crowded spectrum is created. To describe the observations a model is developed that combines the effects of a soft induced gap and of additional Andreev bound states both in the quantum dot and in the finite regions of the nanowire adjacent to the quantum dot. Understanding of Andreev spectroscopy is important for the correct interpretation of Majorana experiments done on the same structures.
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Submitted 11 May, 2018;
originally announced May 2018.
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Shot noise limited nanomechanical detection and radiation pressure backaction from an electron beam
Authors:
Sébastien Pairis,
Fabrice Donatini,
Moira Hocevar,
Dmitri Tumanov,
Nitika Vaish,
Julien Claudon,
Jean-Philippe Poizat,
Pierre Verlot
Abstract:
Detecting nanomechanical motion has become an important challenge in Science and Technology. Recently, electromechanical coupling to focused electron beams has emerged as a promising method adapted to ultra-low scale systems. However the fundamental measurement processes associated with such complex interaction remain to be explored. Here we report highly sensitive detection of the Brownian motion…
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Detecting nanomechanical motion has become an important challenge in Science and Technology. Recently, electromechanical coupling to focused electron beams has emerged as a promising method adapted to ultra-low scale systems. However the fundamental measurement processes associated with such complex interaction remain to be explored. Here we report highly sensitive detection of the Brownian motion of um-long semiconducting nanowires (InAs). The measurement imprecision is found to be set by the shot noise of the secondary electrons generated along the electromechanical interaction. By carefully analysing the nano-electromechanical dynamics, we demonstrate the existence of a radial backaction process which we identify as originating from the momentum exchange between the electron beam and the nanomechanical device, which is also known as radiation pressure.
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Submitted 25 March, 2018;
originally announced March 2018.
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Dislocation-free axial InAs-on-GaAs nanowires on silicon
Authors:
Daria V. Beznasyuk,
Eric Robin,
Martien Den Hertog,
Julien Claudon,
Moïra Hocevar
Abstract:
We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure wurtzite crystal structure. Then, we developed a two-step growth procedure to enhance the yield of vertical InAs-on-GaAs nanowires. We achieved 90% of straight InAs-…
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We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure wurtzite crystal structure. Then, we developed a two-step growth procedure to enhance the yield of vertical InAs-on-GaAs nanowires. We achieved 90% of straight InAs-on-GaAs nanowires by further optimizing the growth parameters. We investigated the composition change at the interface by energy dispersive X-ray spectroscopy and the nanowire crystal structure by transmission electron microscopy. The nominal composition of the InAs segment is found to be In$_{x}$Ga$_{1-x}$As with $x$=0.85 and corresponds to 6% of lattice mismatch with GaAs. Strain mapping performed by the geometrical phase analysis of high-resolution images revealed a dislocation-free GaAs/InAs interface. In conclusion, we successfully fabricated highly mismatched heterostructures, confirming the prediction that axial GaAs/InAs interfaces are pseudomorphic in nanowires below 40 nm diameter.
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Submitted 4 July, 2017; v1 submitted 19 April, 2017;
originally announced April 2017.
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Andreev Molecules in Semiconductor Nanowire Double Quantum Dots
Authors:
Zhaoen Su,
Alexandre B. Tacla,
Moïra Hocevar,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Andrew J. Daley,
David Pekker,
Sergey M. Frolov
Abstract:
Quantum simulation is a way to study unexplored Hamiltonians by mapping them onto the assemblies of well-understood quantum systems such as ultracold atoms in optical lattices, trapped ions or superconducting circuits. Semiconductor nanostructures which form the backbone of classical computing hold largely untapped potential for quantum simulation. In particular, chains of quantum dots in semicond…
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Quantum simulation is a way to study unexplored Hamiltonians by mapping them onto the assemblies of well-understood quantum systems such as ultracold atoms in optical lattices, trapped ions or superconducting circuits. Semiconductor nanostructures which form the backbone of classical computing hold largely untapped potential for quantum simulation. In particular, chains of quantum dots in semiconductor nanowires can be used to emulate one-dimensional Hamiltonians such as the toy model of a topological p-wave superconductor. Here we realize a building block of this model, a double quantum dot with superconducting contacts, in an indium antimonide nanowire. In each dot, tunnel-coupling to a superconductor induces Andreev bound states. We demonstrate that these states hybridize to form the double-dot Andreev molecular states. We establish the parity and the spin structure of Andreev molecular levels by monitoring their evolution in electrostatic potential and magnetic field. Understanding Andreev molecules is a key step towards building longer chains which are predicted to generate Majorana bound states at the end sites. Two superconducting quantum dots are already sufficient to test the fusion rules of Majorana bound states, a milestone towards fault-tolerant topological quantum computing.
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Submitted 17 November, 2016; v1 submitted 2 November, 2016;
originally announced November 2016.
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Magnetic Field Evolution of Spin Blockade in Ge/Si Nanowire Double Quantum Dots
Authors:
Azarin Zarassi,
Zhaoen Su,
Jeroen Danon,
Jens Schwenderling,
Moira Hocevar,
Binh-Minh Nguyen,
Jinkyoung Yoo,
Shadi A. Dayeh,
Sergey M. Frolov
Abstract:
We perform transport measurements on double quantum dots defined in Ge/Si core/shell nanowires and focus on Pauli spin blockade in the regime where tens of holes occupy each dot. We identify spin blockade through the magnetic field dependence of leakage current. We find both a dip and a peak in the leakage current at zero field. We analyze this behavior in terms of the quantum dot parameters such…
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We perform transport measurements on double quantum dots defined in Ge/Si core/shell nanowires and focus on Pauli spin blockade in the regime where tens of holes occupy each dot. We identify spin blockade through the magnetic field dependence of leakage current. We find both a dip and a peak in the leakage current at zero field. We analyze this behavior in terms of the quantum dot parameters such as coupling to the leads, interdot tunnel coupling as well as spin-orbit interaction. We find a lower bound for spin-orbit interaction with $l_{\rm so}=500$ nm. We also extract large and anisotropic effective Land$\rm \acute{e}$ g-factors, with larger g-factors in the direction perpendicular to the nanowire axis in agreement with previous studies and experiments but with larger values reported here.
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Submitted 14 October, 2016;
originally announced October 2016.
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Experimental Phase Diagram of a One-Dimensional Topological Superconductor
Authors:
Jun Chen,
Peng Yu,
John Stenger,
Moïra Hocevar,
Diana Car,
Sébastien R. Plissard,
Erik P. A. M. Bakkers,
Tudor D. Stanescu,
Sergey M. Frolov
Abstract:
Topological superconductors can host Majorana quasiparticles which supersede the fermion/boson dichotomy and offer a pathway to fault tolerant quantum computation. In one-dimensional systems zero-energy Majorana states are bound to the ends of the topologically superconducting regions. An experimental signature of a Majorana bound state is a conductance peak at zero source-drain voltage bias in a…
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Topological superconductors can host Majorana quasiparticles which supersede the fermion/boson dichotomy and offer a pathway to fault tolerant quantum computation. In one-dimensional systems zero-energy Majorana states are bound to the ends of the topologically superconducting regions. An experimental signature of a Majorana bound state is a conductance peak at zero source-drain voltage bias in a tunneling experiment. Here, we identify the bulk topological phase in a semiconductor nanowire coupled to a conventional superconductor. We map out its phase diagram through the dependence of zero-bias peak on the chemical potential and magnetic field. Our findings are consistent with calculations for a finite-length topological nanowire. Knowledge of the phase diagram makes it possible to predictably tune nanowire segments in and out of the topological phase, thus controlling the positions and couplings of multiple Majorana bound states. This ability is a prerequisite for Majorana braiding, an experiment in which Majorana quantum states are exchanged in order to both demonstrate their non-abelian character and realize topological quantum bits.
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Submitted 14 October, 2016;
originally announced October 2016.
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Residual strain and piezoelectric effects in passivated GaAs/AlGaAs core-shell nanowires
Authors:
Moïra Hocevar,
Le Thuy Thanh Giang,
Rudeesun Songmuang,
Martien den Hertog,
Lucien Besombes,
Joël Bleuse,
Yann-Michel Niquet,
Nikos T. Pelekanos
Abstract:
We observe a systematic red shift of the band-edge of passivated GaAs/Al0.35Ga0.65As core-shell nanowires with increasing shell thickness up to 100 nm. The shift is detected both in emission and absorption experiments, reaching values up to 14 meV for the thickest shell nanowires. Part of this red shift is accounted for by the small tensile strain imposed to the GaAs core by the AlGaAs shell, in l…
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We observe a systematic red shift of the band-edge of passivated GaAs/Al0.35Ga0.65As core-shell nanowires with increasing shell thickness up to 100 nm. The shift is detected both in emission and absorption experiments, reaching values up to 14 meV for the thickest shell nanowires. Part of this red shift is accounted for by the small tensile strain imposed to the GaAs core by the AlGaAs shell, in line with theoretical calculations. An additional contribution to this red shift arises from axial piezoelectric fields which develop inside the nanowire core due to Al fluctuations in the shell.
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Submitted 13 February, 2013;
originally announced February 2013.
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Growth and optical properties of axial hybrid III-V/Si nanowires
Authors:
Moïra Hocevar,
George Immink,
Marcel Verheijen,
Nika Akopian,
Val Zwiller,
Leo Kouwenhoven,
Erik Bakkers
Abstract:
Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the fundamental single-electron and single-photon regime. III-V materials, such as direct bandgap gallium-arsenide, are excellent candidates for such optical segments. How…
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Hybrid silicon nanowires with an integrated light-emitting segment can significantly advance nanoelectronics and nanophotonics. They would combine transport and optical characteristics in a nanoscale device, which can operate in the fundamental single-electron and single-photon regime. III-V materials, such as direct bandgap gallium-arsenide, are excellent candidates for such optical segments. However, interfacing them with silicon during crystal growth is a major challenge, because of the lattice mismatch, different expansion coefficients and the formation of anti-phase boundaries. Here, we demonstrate a silicon nanowire with an integrated gallium-arsenide segment. We precisely control the catalyst composition and surface chemistry to obtain dislocation-free interfaces. The integration of gallium-arsenide of high optical quality with silicon is enabled by short gallium phosphide buffers. We anticipate that such hybrid silicon/III-V nanowires open practical routes for quantum information devices, where for instance electronic and photonic quantum bits are manipulated in a III-V segment and stored in a silicon section.
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Submitted 31 October, 2012;
originally announced October 2012.
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Avalanche amplification of a single exciton in a semiconductor nanowire
Authors:
Gabriele Bulgarini,
Michael E. Reimer,
Moïra Hocevar,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Val Zwiller
Abstract:
Interfacing single photons and electrons is a crucial ingredient for sharing quantum information between remote solid-state qubits. Semiconductor nanowires offer the unique possibility to combine optical quantum dots with avalanche photodiodes, thus enabling the conversion of an incoming single photon into a macroscopic current for efficient electrical detection. Currently, millions of excitation…
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Interfacing single photons and electrons is a crucial ingredient for sharing quantum information between remote solid-state qubits. Semiconductor nanowires offer the unique possibility to combine optical quantum dots with avalanche photodiodes, thus enabling the conversion of an incoming single photon into a macroscopic current for efficient electrical detection. Currently, millions of excitation events are required to perform electrical read-out of an exciton qubit state. Here we demonstrate multiplication of carriers from only a single exciton generated in a quantum dot after tunneling into a nanowire avalanche photodiode. Due to the large amplification of both electrons and holes (> 10^4), we reduce by four orders of magnitude the number of excitation events required to electrically detect a single exciton generated in a quantum dot. This work represents a significant step towards single-shot electrical read-out and offers a new functionality for on-chip quantum information circuits.
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Submitted 18 April, 2012;
originally announced April 2012.
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Bright single-photon sources in bottom-up tailored nanowires
Authors:
Michael E. Reimer,
Gabriele Bulgarini,
Nika Akopian,
Moïra Hocevar,
Maaike Bouwes Bavinck,
Marcel A. Verheijen,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Val Zwiller
Abstract:
The ability to achieve near-unity light extraction efficiency is necessary for a truly deterministic single photon source. The most promising method to reach such high efficiencies is based on embedding single photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light extraction efficiencies in current top-down approaches are limited by fabrication imperf…
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The ability to achieve near-unity light extraction efficiency is necessary for a truly deterministic single photon source. The most promising method to reach such high efficiencies is based on embedding single photon emitters in tapered photonic waveguides defined by top-down etching techniques. However, light extraction efficiencies in current top-down approaches are limited by fabrication imperfections and etching induced defects. The efficiency is further tempered by randomly positioned off-axis quantum emitters. Here, we present perfectly positioned single quantum dots on the axis of a tailored nanowire waveguide using bottom-up growth. In comparison to quantum dots in nanowires without waveguide, we demonstrate a 24-fold enhancement in the single photon flux, corresponding to a light extraction efficiency of 42 %. Such high efficiencies in one-dimensional nanowires are promising to transfer quantum information over large distances between remote stationary qubits using flying qubits within the same nanowire p-n junction.
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Submitted 26 March, 2012;
originally announced March 2012.
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Single photon emission and detection at the nanoscale utilizing semiconductor nanowires
Authors:
Michael E. Reimer,
Maarten P. van Kouwen,
Maria Barkelid,
Moira Hocevar,
Maarten. H. M. van Weert,
Rienk E. Algra,
Erik P. A. M. Bakkers,
Mikael T. Bjork,
Heinz Schmid,
Heike Riel,
Leo P. Kouwenhoven,
Val Zwiller
Abstract:
We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical…
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We report recent progress toward on-chip single photon emission and detection in the near infrared utilizing semiconductor nanowires. Our single photon emitter is based on a single InAsP quantum dot embedded in a p-n junction defined along the growth axis of an InP nanowire. Under forward bias, light is emitted from the single quantum dot by electrical injection of electrons and holes. The optical quality of the quantum dot emission is shown to improve when surrounding the dot material by a small intrinsic section of InP. Finally, we report large multiplication factors in excess of 1000 from a single Si nanowire avalanche photodiode comprised of p-doped, intrinsic, and n-doped sections. The large multiplication factor obtained from a single Si nanowire opens up the possibility to detect a single photon at the nanoscale.
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Submitted 2 September, 2010;
originally announced September 2010.
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Generic nano-imprint process for fabrication of nanowire arrays
Authors:
Aurelie Pierret,
Moira Hocevar,
Silke L. Diedenhofen,
Rienk E. Algra,
E. Vlieg,
Eugene C. Timmering,
Marc A. Verschuuren,
George W. G. Immink,
Marcel A. Verheijen,
Erik P. A. M. Bakkers
Abstract:
A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha so…
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A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 C for InP and 700 C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemical cleaning procedure is applicable to other lithographic techniques such as e-beam lithography, and therefore represents a generic process.
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Submitted 11 November, 2009;
originally announced November 2009.
