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Spatially Optimized Compact Deep Metric Learning Model for Similarity Search
Authors:
Md. Farhadul Islam,
Md. Tanzim Reza,
Meem Arafat Manab,
Mohammad Rakibul Hasan Mahin,
Sarah Zabeen,
Jannatun Noor
Abstract:
Spatial optimization is often overlooked in many computer vision tasks. Filters should be able to recognize the features of an object regardless of where it is in the image. Similarity search is a crucial task where spatial features decide an important output. The capacity of convolution to capture visual patterns across various locations is limited. In contrast to convolution, the involution kern…
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Spatial optimization is often overlooked in many computer vision tasks. Filters should be able to recognize the features of an object regardless of where it is in the image. Similarity search is a crucial task where spatial features decide an important output. The capacity of convolution to capture visual patterns across various locations is limited. In contrast to convolution, the involution kernel is dynamically created at each pixel based on the pixel value and parameters that have been learned. This study demonstrates that utilizing a single layer of involution feature extractor alongside a compact convolution model significantly enhances the performance of similarity search. Additionally, we improve predictions by using the GELU activation function rather than the ReLU. The negligible amount of weight parameters in involution with a compact model with better performance makes the model very useful in real-world implementations. Our proposed model is below 1 megabyte in size. We have experimented with our proposed methodology and other models on CIFAR-10, FashionMNIST, and MNIST datasets. Our proposed method outperforms across all three datasets.
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Submitted 9 April, 2024;
originally announced April 2024.
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Non-collinear first-principles studies of the spin-electric coupling in frustrated triangular molecular magnets
Authors:
M. F. Islam,
Kushantha P. K. Withanage,
C. M. Canali,
Mark R. Pederson
Abstract:
Frustrated triangular molecular magnets (MMs) with anti-ferromagnetic ground states (GS) are an important class of magnetic systems with potential applications in quantum information processing. The two-fold degenerate GS of these molecules, characterized by spin chirality, can be utilized to encode qubits for quantum computing. Furthermore, because of the lack of inversion symmetry in these molec…
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Frustrated triangular molecular magnets (MMs) with anti-ferromagnetic ground states (GS) are an important class of magnetic systems with potential applications in quantum information processing. The two-fold degenerate GS of these molecules, characterized by spin chirality, can be utilized to encode qubits for quantum computing. Furthermore, because of the lack of inversion symmetry in these molecules, an electric field couples directly states of opposite chirality, allowing a very efficient and fast control of the qubits. In this work we present a theoretical method to calculate the spin-electric coupling for triangular MMs with effective {\it local} spins $s$ larger than 1/2, which is amenable to a first-principles implementation based on density functional theory (DFT). In contrast to MMs where the net magnetization at the magnetic atoms is $μ_{\rm B}/2$ ($μ_{\rm B} $ is the Bohr magneton), the DFT treatment of frustrated triangular MMs with larger local magnetizations requires a fully non-collinear approach, which we have implemented in the NRLMOL DFT code. As an example, we have used these methods to evaluate the spin-electric coupling for a spin $s = 5/2$ $\{\mathrm{Fe_3}\}$ triangular MM, where this effect has been observed experimentally for the first time quite recently. Our theoretical and computational methods will help elucidate and further guide ongoing experimental work in the field of quantum molecular spintronics.
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Submitted 16 February, 2024;
originally announced February 2024.
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Involution Fused ConvNet for Classifying Eye-Tracking Patterns of Children with Autism Spectrum Disorder
Authors:
Md. Farhadul Islam,
Meem Arafat Manab,
Joyanta Jyoti Mondal,
Sarah Zabeen,
Fardin Bin Rahman,
Md. Zahidul Hasan,
Farig Sadeque,
Jannatun Noor
Abstract:
Autism Spectrum Disorder (ASD) is a complicated neurological condition which is challenging to diagnose. Numerous studies demonstrate that children diagnosed with autism struggle with maintaining attention spans and have less focused vision. The eye-tracking technology has drawn special attention in the context of ASD since anomalies in gaze have long been acknowledged as a defining feature of aut…
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Autism Spectrum Disorder (ASD) is a complicated neurological condition which is challenging to diagnose. Numerous studies demonstrate that children diagnosed with autism struggle with maintaining attention spans and have less focused vision. The eye-tracking technology has drawn special attention in the context of ASD since anomalies in gaze have long been acknowledged as a defining feature of autism in general. Deep Learning (DL) approaches coupled with eye-tracking sensors are exploiting additional capabilities to advance the diagnostic and its applications. By learning intricate nonlinear input-output relations, DL can accurately recognize the various gaze and eye-tracking patterns and adjust to the data. Convolutions alone are insufficient to capture the important spatial information in gaze patterns or eye tracking. The dynamic kernel-based process known as involutions can improve the efficiency of classifying gaze patterns or eye tracking data. In this paper, we utilise two different image-processing operations to see how these processes learn eye-tracking patterns. Since these patterns are primarily based on spatial information, we use involution with convolution making it a hybrid, which adds location-specific capability to a deep learning model. Our proposed model is implemented in a simple yet effective approach, which makes it easier for applying in real life. We investigate the reasons why our approach works well for classifying eye-tracking patterns. For comparative analysis, we experiment with two separate datasets as well as a combined version of both. The results show that IC with three involution layers outperforms the previous approaches.
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Submitted 7 January, 2024;
originally announced January 2024.
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Uncovering local aggregated air quality index with smartphone captured images leveraging efficient deep convolutional neural network
Authors:
Joyanta Jyoti Mondal,
Md. Farhadul Islam,
Raima Islam,
Nowsin Kabir Rhidi,
Sarfaraz Newaz,
Meem Arafat Manab,
A. B. M. Alim Al Islam,
Jannatun Noor
Abstract:
The prevalence and mobility of smartphones make these a widely used tool for environmental health research. However, their potential for determining aggregated air quality index (AQI) based on PM2.5 concentration in specific locations remains largely unexplored in the existing literature. In this paper, we thoroughly examine the challenges associated with predicting location-specific PM2.5 concent…
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The prevalence and mobility of smartphones make these a widely used tool for environmental health research. However, their potential for determining aggregated air quality index (AQI) based on PM2.5 concentration in specific locations remains largely unexplored in the existing literature. In this paper, we thoroughly examine the challenges associated with predicting location-specific PM2.5 concentration using images taken with smartphone cameras. The focus of our study is on Dhaka, the capital of Bangladesh, due to its significant air pollution levels and the large population exposed to it. Our research involves the development of a Deep Convolutional Neural Network (DCNN), which we train using over a thousand outdoor images taken and annotated. These photos are captured at various locations in Dhaka, and their labels are based on PM2.5 concentration data obtained from the local US consulate, calculated using the NowCast algorithm. Through supervised learning, our model establishes a correlation index during training, enhancing its ability to function as a Picture-based Predictor of PM2.5 Concentration (PPPC). This enables the algorithm to calculate an equivalent daily averaged AQI index from a smartphone image. Unlike, popular overly parameterized models, our model shows resource efficiency since it uses fewer parameters. Furthermore, test results indicate that our model outperforms popular models like ViT and INN, as well as popular CNN-based models such as VGG19, ResNet50, and MobileNetV2, in predicting location-specific PM2.5 concentration. Our dataset is the first publicly available collection that includes atmospheric images and corresponding PM2.5 measurements from Dhaka. Our codes and dataset are available at https://github.com/lepotatoguy/aqi.
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Submitted 18 January, 2024; v1 submitted 6 August, 2023;
originally announced August 2023.
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Electric control of spin states in frustrated triangular molecular magnets
Authors:
J. F. Nossa,
M. F. Islam,
Mark R. Pederson,
C. M. Canali
Abstract:
Frustrated triangular molecular magnets are a very important class of magnetic molecules since the absence of inversion symmetry allows an external electric field to couple directly with the spin chirality that characterizes their ground state. The spin-electric coupling in these molecular magnets leads to an efficient and fast method of manipulating spin states, making them an exciting candidate…
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Frustrated triangular molecular magnets are a very important class of magnetic molecules since the absence of inversion symmetry allows an external electric field to couple directly with the spin chirality that characterizes their ground state. The spin-electric coupling in these molecular magnets leads to an efficient and fast method of manipulating spin states, making them an exciting candidate for quantum information processing. The efficiency of the spin-electric coupling depends on the electric dipole coupling between the chiral ground states of these molecules. In this paper, we report on first-principles calculations of spin-electric coupling in $\{V_3\}$ triangular magnetic molecule. We have explicitly calculated the spin-induced charge redistribution within the magnetic centers that is responsible for the spin-electric coupling. Furthermore, we have generalized the method of calculating the strength of the spin-electric coupling to calculate any triangular spin 1/2 molecule with $C_3$ symmetry and have applied it to calculate the coupling strength in $\{V_{15}\}$ molecular magnets.
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Submitted 7 December, 2022;
originally announced December 2022.
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Monolayer MnX and Janus XMnY (X, Y= S, Se, Te): A New Family of 2D Antiferromagnetic Semiconductors
Authors:
Shahid Sattar,
Md. Fhokrul Islam,
C. M. Canali
Abstract:
We present first-principles results on the structural, electronic, and magnetic properties of a new family of two-dimensional antiferromagnetic (AFM) manganese chalcogenides, namely monolayer MnX and Janus XMnY (X, Y= S, Se, Te), among which monolayer MnSe was recently synthesized in experiments [\href{https://pubs.acs.org/doi/abs/10.1021/acsnano.1c05532}{ACS Nano 15 (8),13794 (2021)}]. By carryin…
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We present first-principles results on the structural, electronic, and magnetic properties of a new family of two-dimensional antiferromagnetic (AFM) manganese chalcogenides, namely monolayer MnX and Janus XMnY (X, Y= S, Se, Te), among which monolayer MnSe was recently synthesized in experiments [\href{https://pubs.acs.org/doi/abs/10.1021/acsnano.1c05532}{ACS Nano 15 (8),13794 (2021)}]. By carrying out calculations of the phonon dispersion and \textit{ab-initio} molecular dynamics simulations, we first confirmed that these systems, characterized by an unconventional strongly coupled bilayer atomic structure (consisting of Mn atoms buckled to chalcogens forming top and bottom ferromagnetic (FM) planes with antiparallel spin orientation) are dynamically and thermally stable. The analysis of the the magnetic properties shows that these materials have robust AFM order, retaining a much lower energy than the FM state even for under strain. Our electronic structure calculations reveal that pristine MnX and their Janus counterparts are indirect-gap semiconductors, covering a wide energy range and displaying tunable band gaps by the application of biaxial tensile and compressive strain. Interestingly, owing to the absence of inversion and time-reversal symmetry, and the presence of an asymmetrical potential in the out-of-plane direction, Janus XMnY become spin-split gapped systems, presenting a rich physics yet to be explored. Our findings provide novel insights in this physics, and highlight the potential for these two-dimensional manganese chalcogenides in AFM spintronics.
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Submitted 11 April, 2022;
originally announced April 2022.
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Electronic properties of TaAs2 topological semimetal investigated by transport and ARPES
Authors:
A. S. Wadge,
G. Grabecki,
C. Autieri,
B. J. Kowalski,
P. Iwanowski,
G. Cuono,
M. F. Islam,
C. M. Canali,
K. Dybko,
A. Hruban,
A. Łusakowski,
T. Wojciechowski,
R. Diduszko,
A. Lynnyk,
N. Olszowska,
M. Rosmus,
J. Kołodziej,
A. Wiśniewski
Abstract:
We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$…
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We have performed electron transport and ARPES measurements on single crystals of transition metal dipnictide TaAs2 cleaved along the ($\overline{2}$ 0 1) surface which has the lowest cleavage energy. A Fourier transform of the Shubnikov-de Haas oscillations shows four different peaks whose angular dependence was studied with respect to the angle between the magnetic field and the [$\overline{2}$ 0 1] direction. The results indicate the elliptical shape of the Fermi surface cross-sections. Additionally, a mobility spectrum analysis was carried out, which also reveals at least four types of carriers contributing to the conductance (two kinds of electrons and two kinds of holes). ARPES spectra were taken on freshly cleaved ($\overline{2}$ 0 1) surface and it was found that bulk states pockets at the constant energy surface are elliptical, which confirms the magnetotransport angle dependent studies. First-principles calculations support the interpretation of the experimental results. The theoretical calculations better reproduce the ARPES data if the theoretical Fermi level is increased, which is due to a small n-doping of the samples. This shifts the Fermi level closer to the Dirac point, allowing to investigate the physics of the Dirac and Weyl points, making this compound a platform for the investigation of the Dirac and Weyl points in three-dimensional materials.
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Submitted 10 January, 2022; v1 submitted 9 August, 2021;
originally announced August 2021.
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Realization of the Chern insulator and Axion insulator phases in antiferromagnetic $MnTe$-$Bi_2(Se, Te)_3$-$MnTe$ heterostructures
Authors:
N. Pournaghavi,
M. F. Islam,
Rajibul Islam,
Carmine Autieri,
Tomasz Dietl,
C. M. Canali
Abstract:
Breaking time-reversal symmetry in three-dimensional topological insulator thin films can lead to different topological quantum phases, such as the Chern insulator (CI) phase, and the axion insulator (AI) phase. Using first-principles density functional theory methods, we investigate the onset of these two topological phases in a tri-layer heterostructure consisting of a Bi$_2$Se$_3$ (Bi$_2$Te…
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Breaking time-reversal symmetry in three-dimensional topological insulator thin films can lead to different topological quantum phases, such as the Chern insulator (CI) phase, and the axion insulator (AI) phase. Using first-principles density functional theory methods, we investigate the onset of these two topological phases in a tri-layer heterostructure consisting of a Bi$_2$Se$_3$ (Bi$_2$Te$_3$) TI thin film sandwiched between two antiferromagnetic MnTe layers. We find that an orthogonal exchange field from the MnTe layers, stabilized by a small anisotropy barrier, opens an energy gap of the order of 10 meV at the Dirac point of the TI film. A topological analysis demonstrates that, depending on the relative orientation of the exchange field at the two interfaces, the total Chern number of the system is either ${\cal C} = 1$ or ${\cal C} = 0$, characteristic of the CI and the AI phase, respectively. Non-topological surface states inside the energy-gap region, caused by the interface potential, complicate this identification. Remarkably though, the calculation of the anomalous Hall conductivity shows that such non-topological surface states do not affect the topology-induced transport properties. Given the size of the exchange gap, we estimate that gapless chiral edge states, leading to the quantum anomalous Hall effect, should emerge on the sidewalls of these heterostructures in the CI phase for widths $\ge 200$ nm. We also discuss the possibility of inducing transitions between the CI and the AI phases by means of the spin-orbit torque caused by the spin Hall effect in an adjacent conducting layer.
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Submitted 15 May, 2021; v1 submitted 15 January, 2021;
originally announced January 2021.
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Impurity induced topological phase transitions in Cd$_3$As$_2$ and Na$_3$Bi Dirac semimetals
Authors:
A. Rancati,
N. Pournaghavi,
M. F. Islam,
A. Debernardi,
C. M. Canali
Abstract:
Using first-principles density functional theory calculations, combined with a topological analysis, we have investigated the electronic properties of $Cd_3As_2$ and $Na_3Bi$ Dirac topological semimetals doped with non-magnetic and magnetic impurities. Our systematic analysis shows that the selective breaking of the inversion, rotational and time-reversal symmetry, controlled by specific choices o…
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Using first-principles density functional theory calculations, combined with a topological analysis, we have investigated the electronic properties of $Cd_3As_2$ and $Na_3Bi$ Dirac topological semimetals doped with non-magnetic and magnetic impurities. Our systematic analysis shows that the selective breaking of the inversion, rotational and time-reversal symmetry, controlled by specific choices of the impurity doping, induces phase transitions from the original Dirac semimetal to a variety of topological phases such as, topological insulator, trivial semimetal, non-magnetic and magnetic Weyl semimetal, and Chern insulator. The Dirac semimetal phase can exist only if the rotational symmetry $C_n$ with $n > 2$ is maintained. One particularly interesting phase emerging in doped $Cd_3As_2$ is a coexisting Dirac-Weyl phase, which occurs when only inversion symmetry is broken while time-reversal symmetry and rotational symmetry are both preserved. To further characterize the low-energy excitations of this phase, we have complemented our density functional results with a continuum four-band $k\cdot p$ model, which indeed displays nodal points of both Dirac and Weyl type. The coexisting phase appears as a transition point between two topologically distinct Dirac phases, but may also survive in a small region of parameter space controlled by external strain.
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Submitted 11 November, 2020; v1 submitted 2 March, 2020;
originally announced March 2020.
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A Multiferroic Molecular Magnetic Qubit
Authors:
Alexander I Johnson,
M. Fhokrul Islam,
Carlo M. Canali,
Mark R Pederson
Abstract:
The chiral $Fe_3O(NC_5H_5)_3(O_2CC_6H_5)_6$ molecular cation, with C$_3$ symmetry, is composed of three six-fold coordinated spin-carrying Fe$^{3+}$ cations that form a perfect equilateral triangle. Experimental reports demonstrating the spin-electric effect in this system also identify the presence of a magnetic uni-axis and suggest that this molecule may be a good candidate for an externally con…
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The chiral $Fe_3O(NC_5H_5)_3(O_2CC_6H_5)_6$ molecular cation, with C$_3$ symmetry, is composed of three six-fold coordinated spin-carrying Fe$^{3+}$ cations that form a perfect equilateral triangle. Experimental reports demonstrating the spin-electric effect in this system also identify the presence of a magnetic uni-axis and suggest that this molecule may be a good candidate for an externally controllable molecular qubit. Here we demonstrate, using standard density-functional methods, that the spin-electric behavior of this molecule could be even more interesting as there are energetically competitive reference states associated with both high and low local spins (S=5/2 vs. S=1/2) on the Fe$^{3+}$ ions. Each of these structures allow for spin-electric ground states. We find that qualitative differences in the broadening of the Fe(2s) and O(1s) core levels and the single-spin anisotropy Hamiltonian may be used to confirm whether the high-spin manifold is lower in energy than the low-spin manifold.
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Submitted 15 October, 2019; v1 submitted 19 September, 2019;
originally announced September 2019.
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Impurity-potential-induced gap at the Dirac point of topological insulators with in-plane magnetization
Authors:
M. F. Islam,
Anna Pertsova,
C. M. Canali
Abstract:
The quantum anomalous Hall effect (QAHE), characterized by dissipationless quantized edge transport, relies crucially on a non-trivial topology of the electronic bulk bandstructure and a robust ferromagnetic order that breaks time-reversal symmetry. Magnetically-doped topological insulators (TIs) satisfy both these criteria, and are the most promising quantum materials for realizing the QAHE. Beca…
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The quantum anomalous Hall effect (QAHE), characterized by dissipationless quantized edge transport, relies crucially on a non-trivial topology of the electronic bulk bandstructure and a robust ferromagnetic order that breaks time-reversal symmetry. Magnetically-doped topological insulators (TIs) satisfy both these criteria, and are the most promising quantum materials for realizing the QAHE. Because the spin of the surface electrons aligns along the direction of magnetic-impurity exchange field, only magnetic TIs with an out-of-plane magnetization are thought to open a gap at the Dirac point (DP) of the surface states, resulting in the QAHE. Using a continuum model supported by atomistic tight-binding and first-principles calculations of transition-metal doped Bi$_2$Se$_3$, we show that a surface-impurity potential generates an additional effective magnetic field which spin-polarizes the surface electrons along the direction perpendicular to the surface. The predicted gap-opening mechanism results from the interplay of this additional field and the in-plane magnetization that shifts the position of the DP away from the $Γ$ point. This effect is similar to the one originating from the hexagonal warping correction of the bandstructure but is one order of magnitude stronger. Our calculations show that in a doped TI with in-plane magnetization the impurity-potential-induced gap at the DP is comparable to the one opened by an out-of-plane magnetization.
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Submitted 19 March, 2019; v1 submitted 18 January, 2019;
originally announced January 2019.
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Systematics of electronic and magnetic properties in the transition metal doped Sb$_2$Te$_3$ quantum anomalous Hall platform
Authors:
M F. Islam,
C. M. Canali,
A. Pertsova,
A. Balatsky,
S. K. Mahatha,
C. Carbone,
A. Barla,
K. A. Kokh,
O. E. Tereshchenk,
E. Jiménez,
N. B. Brookes,
P. Gargiani,
M. Valvidares,
S. Schatz,
T. R. F. Peixoto,
H. Bentmann,
F. Reinert,
J. Jung,
T. Bathon,
K. Fauth,
M. Bode,
P. Sessi
Abstract:
The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically-doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here we report on a detailed and systematic investigation of transition-metal (TM)-doped Sb$_2$Te$_3$. By combining density functional theory (…
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The quantum anomalous Hall effect (QAHE) has recently been reported to emerge in magnetically-doped topological insulators. Although its general phenomenology is well established, the microscopic origin is far from being properly understood and controlled. Here we report on a detailed and systematic investigation of transition-metal (TM)-doped Sb$_2$Te$_3$. By combining density functional theory (DFT) calculations with complementary experimental techniques, i.e., scanning tunneling microscopy (STM), resonant photoemission (resPES), and x-ray magnetic circular dichroism (XMCD), we provide a complete spectroscopic characterization of both electronic and magnetic properties. Our results reveal that the TM dopants not only affect the magnetic state of the host material, but also significantly alter the electronic structure by generating impurity-derived energy bands. Our findings demonstrate the existence of a delicate interplay between electronic and magnetic properties in TM-doped TIs. In particular, we find that the fate of the topological surface states critically depends on the specific character of the TM impurity: while V- and Fe-doped Sb$_2$Te$_3$ display resonant impurity states in the vicinity of the Dirac point, Cr and Mn impurities leave the energy gap unaffected. The single-ion magnetic anisotropy energy and easy axis, which control the magnetic gap opening and its stability, are also found to be strongly TM impurity-dependent and can vary from in-plane to out-of-plane depending on the impurity and its distance from the surface. Overall, our results provide general guidelines for the realization of a robust QAHE in TM-doped Sb$_2$Te$_3$ in the ferromagnetic state.
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Submitted 14 February, 2018;
originally announced February 2018.
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Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties
Authors:
J. Sadowski,
S. Kret,
A. Siusys,
T. Wojciechowski,
K. Gas,
M. F. Islam,
C. M. Canali,
M. Sawicki
Abstract:
(Ga,Mn)As in wurtzite crystal structure, is coherently grown by molecular beam epitaxy on the {1100} side facets of wurtizte (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time a true long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by a…
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(Ga,Mn)As in wurtzite crystal structure, is coherently grown by molecular beam epitaxy on the {1100} side facets of wurtizte (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time a true long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by a proper selection/choice of both the core and outer shell materials.
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Submitted 15 December, 2017;
originally announced December 2017.
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Dy doped BiFeO$_3$ : A Bulk Ceramic with Improved Multiferroic Properties Compared to Nano Counterparts
Authors:
Sayeed Shafayet Chowdhurya,
Abu Hena Mostafa Kamal,
Rana Hossain,
Mehedi Hasan,
Md. Fakhrul Islam,
Bashir Ahmmad,
M. A. Basith
Abstract:
The synthesis as well as structural, multiferroic and optical characterization of Dy doped BiFeO$_3$ multiferroic ceramic are presented. Bulk polycrystalline Bi$_{0.9}$Dy$_{0.1}$FeO$_3$ sample is synthesized by solid state reaction, while their nano counterparts are prepared using ultrasonic probe sonication technique. Significant improvement of phase purity in the as synthesized samples is observ…
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The synthesis as well as structural, multiferroic and optical characterization of Dy doped BiFeO$_3$ multiferroic ceramic are presented. Bulk polycrystalline Bi$_{0.9}$Dy$_{0.1}$FeO$_3$ sample is synthesized by solid state reaction, while their nano counterparts are prepared using ultrasonic probe sonication technique. Significant improvement of phase purity in the as synthesized samples is observed after the doping of Dy both in bulk Bi$_{0.9}$Dy$_{0.1}$FeO$_3$ sample and corresponding nanoparticles as evidenced from Rietveld refinement. Magnetization measurements using SQUID magnetometer exhibit enhanced magnetic properties for Dy doped bulk Bi$_{0.9}$Dy$_{0.1}$FeO$_3$ ceramic compared to their nanostructured counterparts as well as undoped BiFeO$_3$. Within the applied field range, saturation polarization is observed for Bi$_{0.9}$Dy$_{0.1}$FeO$_3$ bulk ceramic only. As a result, intrinsic ferroelectric behavior is obtained just for this sample. Optical bandgap measurements reveal lower bandgap for Dy doped bulk Bi$_{0.9}$Dy$_{0.1}$FeO$_3$ ceramic compared to that of corresponding nanoparticles and undoped BiFeO$_3$. The outcome of this investigation demonstrates the potential of Dy as a doping element in BiFeO$_3$ that provides a bulk ceramic material with improved multiferroic and optical properties compared to those of corresponding nanoparticles which involve rigorous synthesis procedure.
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Submitted 30 June, 2017;
originally announced June 2017.
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Social Network Analysis of yahoo web-search engine query logs
Authors:
Mohamed Aboeleinen,
A H M Forhadul Islam
Abstract:
Web is now the undisputed warehouse for information. It can now provide most of the answers for modern problems. Search engines do a great job by combining and ranking the best results when the users try to search for any particular information. However, as we know 'with great power comes great responsibility', it is not an easy task for data analysts to find the most relevant information for the…
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Web is now the undisputed warehouse for information. It can now provide most of the answers for modern problems. Search engines do a great job by combining and ranking the best results when the users try to search for any particular information. However, as we know 'with great power comes great responsibility', it is not an easy task for data analysts to find the most relevant information for the queries. One major challenge is that web search engines face difficulties in recognizing users' specific search interests given his initial query. In this project, we have tried to build query networks from web search engine query logs, with the nodes representing queries and the edges exhibiting the semantic relatedness between Queries.
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Submitted 2 May, 2017;
originally announced May 2017.
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Size dependent magnetic and electrical properties of Ba-doped nanocrystalline BiFeO$_3$
Authors:
Mehedi Hasan,
M. A. Hakim,
M. A. Basith,
Md. Sarowar Hossain,
Bashir Ahmmad,
M. A. Zubair,
A. Hussain,
Md. Fakhrul Islam
Abstract:
Improvement in magnetic and electrical properties of multiferroic BiFeO$_3$ in conjunction with their dependence on particle size is crucial due to its potential applications in multifunctional miniaturized devices. In this investigation, we report a study on particle size dependent structural, magnetic and electrical properties of sol-gel derived Bi$_{0.9}$Ba$_{0.1}$FeO$_3$ nanoparticles of diffe…
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Improvement in magnetic and electrical properties of multiferroic BiFeO$_3$ in conjunction with their dependence on particle size is crucial due to its potential applications in multifunctional miniaturized devices. In this investigation, we report a study on particle size dependent structural, magnetic and electrical properties of sol-gel derived Bi$_{0.9}$Ba$_{0.1}$FeO$_3$ nanoparticles of different sizes ranging from $\sim$ 12 to 49 nm. The substitution of Bi by Ba significantly suppresses oxygen vacancies, reduces leakage current density and Fe$^{2+}$ state. An improvement in both magnetic and electrical properties is observed for 10 % Ba-doped BiFeO$_3$ nanoparticles compared to its undoped counterpart. The saturation magnetization of Bi$_{0.9}$Ba$_{0.1}$FeO$_3$ nanoparticles increase with reducing particle size in contrast with a decreasing trend of ferroelectric polarization. Moreover, a first order metamagnetic transition is noticed for $\sim$ 49 nm Bi$_{0.9}$Ba$_{0.1}$FeO$_3$ nanoparticles which disappeared with decreasing particle size. The observed strong size dependent multiferroic properties are attributed to the complex interaction between vacancy induced crystallographic defects, multiple valence states of Fe, uncompensated surface spins, crystallographic distortion and suppression of spiral spin cycloid of BiFeO$_3$.
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Submitted 1 July, 2016;
originally announced July 2016.
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Saturation magnetization and band gap tuning in BiFeO$_3$ nanoparticles via co-substitution of Gd and Mn
Authors:
Mehedi Hasan,
M. A. Basith,
M. A. Zubair,
Md. Sarowar Hossain,
Rubayyat Mahbub,
M. A. Hakim,
Md. Fakhrul Islam
Abstract:
In this investigation, Gd and Mn co-doped Bi$_{0.85}$Gd$_{0.15}$Fe$_{1-x}$Mn$_x$O$_3$ (x=0.0-0.15) nanoparticles have been prepared to report the influence of co-substitution on their structural, optical, magnetic and electrical properties. Due to simultaneous substitution of Gd and Mn in BiFeO$_3$, the crystal structure has been modified from rhombohedral (R3c) to orthorhombic (Pn21a) and the Fe-…
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In this investigation, Gd and Mn co-doped Bi$_{0.85}$Gd$_{0.15}$Fe$_{1-x}$Mn$_x$O$_3$ (x=0.0-0.15) nanoparticles have been prepared to report the influence of co-substitution on their structural, optical, magnetic and electrical properties. Due to simultaneous substitution of Gd and Mn in BiFeO$_3$, the crystal structure has been modified from rhombohedral (R3c) to orthorhombic (Pn21a) and the Fe-O-Fe bond angle and Fe-O bond length have been changed. For Mn doping up to 10 % in Bi$_{0.85}$Gd$_{0.15}$Fe$_{1-x}$Mn$_x$O$_3$ nanoparticles, the saturation magnetization (Ms) has been enhanced significantly, however, for a further increase of doping up to 15 %, the Ms has started to reduce again. The co-substitution of Gd and Mn in BiFeO$_3$ nanoparticles also demonstrates a strong reduction in the optical band gap energy and electrical resistivity compared to that of undoped BiFeO$_3$.
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Submitted 1 July, 2016;
originally announced July 2016.
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Interplay between Mn-acceptor state and Dirac surface states in Mn-doped Bi$_2$Se$_3$ topological insulator
Authors:
M. R. Mahani,
A. Pertsova,
M. Fhokru Islam,
C. M. Canali
Abstract:
We investigate the properties of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of Bi$_2$Se$_3$ topological insulator. Combining ab initio calculations with microscopic tight-binding modeling, we identify the effects of inversion-symmetry and time-reversal-symmetry breaking on the electronic states in the vicinity of the Dirac point. In agreement with ex…
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We investigate the properties of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of Bi$_2$Se$_3$ topological insulator. Combining ab initio calculations with microscopic tight-binding modeling, we identify the effects of inversion-symmetry and time-reversal-symmetry breaking on the electronic states in the vicinity of the Dirac point. In agreement with experiments, we find evidence that the Mn ion is in the ${+2}$-valence state and introduces an acceptor in the bulk band gap. The Mn-acceptor has predominantly $p$-character, and is localized mainly around the Mn impurity and its nearest-neighbor Se atoms. Its electronic structure and spin-polarization are determined by the hybridization between the Mn $d$-levels and the $p$-levels of surrounding Se atoms, which is strongly affected by electronic correlations at the Mn site. The opening of the gap at the Dirac point depends crucially on the quasi-resonant coupling and the strong real-space overlap between the spin-chiral surface states and the mid-gap spin-polarized Mn-acceptor states.
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Submitted 12 November, 2014; v1 submitted 18 June, 2014;
originally announced June 2014.
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Electronic structure and magnetic properties of Mn and Fe impurities near GaAs (110) surface
Authors:
M. R. Mahani,
M. Fhokrul Islam,
A. Pertsova,
C. M. Canali
Abstract:
Combining density-functional theory calculations and microscopic tight-binding models, we investigate theoretically the electronic and magnetic properties of individual substitutional transition-metal impurities (Mn and Fe) positioned in the vicinity of the (110) surface of GaAs. For the case of the $[\rm Mn^{2+}]^0$ plus acceptor-hole (h) complex, the results of a tight-binding model including ex…
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Combining density-functional theory calculations and microscopic tight-binding models, we investigate theoretically the electronic and magnetic properties of individual substitutional transition-metal impurities (Mn and Fe) positioned in the vicinity of the (110) surface of GaAs. For the case of the $[\rm Mn^{2+}]^0$ plus acceptor-hole (h) complex, the results of a tight-binding model including explicitly the impurity $d$-electrons are in good agreement with approaches that treat the spin of the impurity as an effective classical vector. For the case of Fe, where both the neutral isoelectronic $[\rm Fe^{3+}]^0$ and the ionized $[\rm Fe^{2+}]^-$ states are relevant to address scanning tunneling microscopy (STM) experiments, the inclusion of $d$-orbitals is essential. We find that the in-gap electronic structure of Fe impurities is significantly modified by surface effects. For the neutral acceptor state $[{\rm Fe}^{2+}, h]^0$, the magnetic-anisotropy dependence on the impurity sublayer resembles the case of $[{\rm Mn}^{2+}, h]^0$. In contrast, for $[{\rm Fe}^{3+}]^{0}$ electronic configuration the magnetic anisotropy behaves differently and it is considerably smaller. For this state we predict that it is possible to manipulate the Fe moment, e.g. by an external magnetic field, with detectable consequences in the local density of states probed by STM.
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Submitted 17 April, 2014; v1 submitted 3 January, 2014;
originally announced January 2014.
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Electric control of a $\{Fe_4\}$ single-molecule magnet in a single-electron transistor
Authors:
J. F. Nossa,
M. Fhokrul Islam,
C. M. Canali,
M. R. Pederson
Abstract:
Using first-principles methods we study theoretically the properties of an individual $\{Fe_4\}$ single-molecule magnet (SMM) attached to metallic leads in a single-electron transistor geometry. We show that the conductive leads do not affect the spin ordering and magnetic anisotropy of the neutral SMM. On the other hand, the leads have a strong effect on the anisotropy of the charged states of th…
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Using first-principles methods we study theoretically the properties of an individual $\{Fe_4\}$ single-molecule magnet (SMM) attached to metallic leads in a single-electron transistor geometry. We show that the conductive leads do not affect the spin ordering and magnetic anisotropy of the neutral SMM. On the other hand, the leads have a strong effect on the anisotropy of the charged states of the molecule, which are probed in Coulomb blockade transport. Furthermore, we demonstrate that an external electric potential, modeling a gate electrode, can be used to manipulate the magnetic properties of the system. For a charged molecule, by localizing the extra charge with the gate voltage closer to the magnetic core, the anisotropy magnitude and spin ordering converges to the values found for the isolated $\{Fe_4\}$ SMM. We compare these findings with the results of recent quantum transport experiments in three-terminal devices.
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Submitted 13 March, 2013;
originally announced March 2013.
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First-principle studies of the spin-orbit and the Dzyaloshinskii-Moriya interactions in the \{Cu$_3$\} single-molecule magnet
Authors:
J. F. Nossa,
M. F. Islam,
C. M. Canali,
M. R. Pederson
Abstract:
Frustrated triangular molecule magnets such as \{Cu$_3$\} are characterized by two degenerate S=1/2 ground-states with opposite chirality. Recently it has been proposed theoretically [PRL {\bf 101}, 217201 (2008)] and verified by {\it ab-initio} calculations [PRB {\bf 82}, 155446 (2010)] that an external electric field can efficiently couple these two chiral spin states, even in the absence of spi…
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Frustrated triangular molecule magnets such as \{Cu$_3$\} are characterized by two degenerate S=1/2 ground-states with opposite chirality. Recently it has been proposed theoretically [PRL {\bf 101}, 217201 (2008)] and verified by {\it ab-initio} calculations [PRB {\bf 82}, 155446 (2010)] that an external electric field can efficiently couple these two chiral spin states, even in the absence of spin-orbit interaction (SOI). The SOI is nevertheless important, since it introduces a splitting in the ground-state manifold via the Dzyaloshinskii-Moriya interaction. In this paper we present a theoretical study of the effect of the SOI on the chiral states within spin density functional theory. We employ a recently-introduced Hubbard model approach to elucidate the connection between the SOI and the Dzyaloshinskii-Moriya interaction. This allows us to express the Dzyaloshinskii-Moriya interaction constant $D$ in terms of the microscopic Hubbard model parameters, which we calculate from first-principles. The small splitting that we find for the \{Cu$_3$\} chiral state energies ($Δ\approx 0.02$ meV) is consistent with experimental results. The Hubbard model approach adopted here also yields a better estimate of the isotropic exchange constant than the ones obtained by comparing total energies of different spin configurations. The method used here for calculating the DM interaction unmasks its simple fundamental origin which is the off-diagonal spin-orbit interaction between the generally multireference vacuum state and single-electron excitations out of those states.
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Submitted 13 November, 2011;
originally announced November 2011.
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First-principle studies of spin-electric coupling in a $\{Cu_3\}$ single molecular magnet
Authors:
M. Fhokrul Islam,
Javier F. Nossa,
Carlo M. Canali,
Mark Pederson
Abstract:
We report on a study of the electronic and magnetic properties of the triangular antiferromagnetic $\{Cu_3\}$ single-molecule magnet, based on spin density functional theory. Our calculations show that the low-energy magnetic properties are correctly described by an effective three-site spin $s=1/2$ Heisenberg model, with an antiferromagnetic exchange coupling $J \approx 5$ meV. The ground state m…
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We report on a study of the electronic and magnetic properties of the triangular antiferromagnetic $\{Cu_3\}$ single-molecule magnet, based on spin density functional theory. Our calculations show that the low-energy magnetic properties are correctly described by an effective three-site spin $s=1/2$ Heisenberg model, with an antiferromagnetic exchange coupling $J \approx 5$ meV. The ground state manifold of the model is composed of two degenerate spin $S=1/2$ doublets of opposite chirality. Due to lack of inversion symmetry in the molecule these two states are coupled by an external electric field, even when spin-orbit interaction is absent. The spin-electric coupling can be viewed as originating from a modified exchange constant $δJ$ induced by the electric field. We find that the calculated transition rate between the chiral states yields an effective electric dipole moment $d = 3.38\times 10^{-33} {\rm C\ m} \approx e 10^{-4}a$, where $a$ is the Cu separation. For external electric fields ${\varepsilon} \approx 10^8$ V/m this value corresponds to a Rabi time $τ\approx 1$ ns and to a $δJ$ of the order of a few $μ$eV.
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Submitted 6 August, 2010;
originally announced August 2010.
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Localization-delocalization transition in 2D quantum percolation model
Authors:
Md Fhokrul Islam,
Hisao Nakanishi
Abstract:
We study the hopping transport of a quantum particle through randomly diluted percolation clusters in two dimensions realized both on the square and triangular lattices. We investigate the nature of localization of the particle by calculating the transmission coefficient as a function of energy (-2 < E < 2 in units of the hopping integral in the tight-binding Hamiltonian) and disorder, q (probab…
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We study the hopping transport of a quantum particle through randomly diluted percolation clusters in two dimensions realized both on the square and triangular lattices. We investigate the nature of localization of the particle by calculating the transmission coefficient as a function of energy (-2 < E < 2 in units of the hopping integral in the tight-binding Hamiltonian) and disorder, q (probability that a given site of the lattice is not available to the particle). Our study based on finite size scaling suggests the existence of delocalized states that depends on energy and amount of disorder present in the system. For energies away from the band center (E = 0), delocalized states appear only at low disorder (q < 15%). The transmission near the band center is generally very small for any amount of disorder and therefore makes it difficult to locate the transition to delocalized states if any, but our study does indicate a behavior that is weaker than power-law localization. Apart from this localization-delocalization transition, we also find the existence of two different kinds of localization regimes depending on energy and amount of disorder. For a given energy, states are exponentially localized for sufficiently high disorder. As the disorder decreases, states first show power-law localization before showing a delocalized behavior.
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Submitted 26 September, 2007;
originally announced September 2007.
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Propagation of a quantum particle through two dimensional percolating systems
Authors:
Md Fhokrul Islam,
Hisao Nakanishi
Abstract:
We study quantum percolation which is described by a tight-binding Hamiltonian containing only off-diagonal hopping terms that are generally in quenched binary disorder (zero or one). In such a system, transmission of a quantum particle is determined by the disorder and interference effects, leading to interesting sharp features in conductance as the energy, disorder, and boundary conditions are…
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We study quantum percolation which is described by a tight-binding Hamiltonian containing only off-diagonal hopping terms that are generally in quenched binary disorder (zero or one). In such a system, transmission of a quantum particle is determined by the disorder and interference effects, leading to interesting sharp features in conductance as the energy, disorder, and boundary conditions are varied. To aid understanding of this phenomenon, we develop a visualization method whereby the progression of a wave packet entering the cluster through a lead on one side and exiting from another lead on the other side can be tracked dynamically. Using this method, we investigate the evolution of the wave packet through transmission and reflection under clusters of various disorder, sizes, boundary conditions, and energies. Our results indicate the existence of two different kinds of localized regimes, namely exponential and power law localization, depending on the amount of disorder. Our study further suggests that there may be a delocalized state in the 2D quantum percolation system at very low disorder. These results are based on a finite size scaling analysis of the systems of size up to 70 x 70 (containing 4900 sites) on the square lattice.
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Submitted 19 September, 2007;
originally announced September 2007.
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Fluctuations and Rheology in Active Bacterial Suspensions
Authors:
D. T. N. Chen,
A. W. C. Lau,
L. A. Hough,
M. F. Islam,
M. Goulian,
T. C. Lubensky,
A. G. Yodh
Abstract:
We probe non-equilibrium properties of an active bacterial bath through measurements of correlations of passive tracer particles and the response function of a driven, optically trapped tracer. These measurements demonstrate violation of the fluctuation-dissipation theorem and enable us to extract the power spectrum of the active stress fluctuations. In some cases, we observe $1/\sqrtω$ scaling…
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We probe non-equilibrium properties of an active bacterial bath through measurements of correlations of passive tracer particles and the response function of a driven, optically trapped tracer. These measurements demonstrate violation of the fluctuation-dissipation theorem and enable us to extract the power spectrum of the active stress fluctuations. In some cases, we observe $1/\sqrtω$ scaling in the noise spectrum which we show can be derived from a theoretical model incorporating coupled stress, orientation, and concentration fluctuations of the bacteria.
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Submitted 10 September, 2007;
originally announced September 2007.
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Electronic Devices Based on Purified Carbon Nanotubes Grown By High Pressure Decomposition of Carbon Monoxide
Authors:
Danvers E. Johnston,
Mohammad F. Islam,
Arjun G. Yodh,
Alan T. Johnson
Abstract:
The excellent properties of transistors, wires, and sensors made from single-walled carbon nanotubes (SWNTs) make them promising candidates for use in advanced nanoelectronic systems. Gas-phase growth procedures such as the high pressure decomposition of carbon monoxide (HiPCO) method yield large quantities of small diameter semiconducting SWNTs, which are ideal for use in nanoelectronic circuit…
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The excellent properties of transistors, wires, and sensors made from single-walled carbon nanotubes (SWNTs) make them promising candidates for use in advanced nanoelectronic systems. Gas-phase growth procedures such as the high pressure decomposition of carbon monoxide (HiPCO) method yield large quantities of small diameter semiconducting SWNTs, which are ideal for use in nanoelectronic circuits. As-grown HiPCO material, however, commonly contains a large fraction of carbonaceous impurities that degrade properties of SWNT devices. Here we demonstrate a purification, deposition, and fabrication process that yields devices consisting of metallic and semiconducting nanotubes with electronic characteristics vastly superior to those of circuits made from raw HiPCO. Source-drain current measurements on the circuits as a function of temperature and backgate voltage are used to quantify the energy gap of semiconducting nanotubes in a field effect transistor geometry. This work demonstrates significant progress towards the goal of producing complex integrated circuits from bulk-grown SWNT material.
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Submitted 19 July, 2005;
originally announced July 2005.