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Direct Growth of Monolayer MoS$_2$ on Nanostructured Silicon Waveguides
Authors:
Athira Kuppadakkath,
Emad Najafidehaghani,
Ziyang Gan,
Alessandro Tuniz,
Gia Quyet Ngo,
Heiko Knopf,
Franz J. F. Löchner,
Fatemeh Abtahi,
Tobias Bucher,
Sai Shradha,
Thomas Käsebier,
Stefano Palomba,
Nadja Felde,
Pallabi Paul,
Tobias Ullsperger,
Sven Schröder,
Adriana Szeghalmi,
Thomas Pertsch,
Isabelle Staude,
Uwe Zeitner,
Antony George,
Andrey Turchanin,
Falk Eilenberger
Abstract:
We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We sho…
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We report for the first time the direct growth of Molybdenum disulfide (MoS$_2$) monolayers on nanostructured silicon-on-insulator waveguides. Our results indicate the possibility of utilizing the Chemical Vapour Deposition (CVD) on nanostructured photonic devices in a scalable process. Direct growth of 2D material on nanostructures rectifies many drawbacks of the transfer-based approaches. We show that the van der Waals materials grow conformally across the curves, edges, and the silicon-SiO$_2$ interface of the waveguide structure. Here, the waveguide structure used as a growth substrate is complex not just in terms of its geometry but also due to the two materials (Si and SiO$_2$) involved. A transfer-free method like this yields a novel approach for functionalizing nanostructured, integrated optical architectures with an optically active direct semiconductor.
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Submitted 27 May, 2022;
originally announced June 2022.
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Modular Hybrid Plasmonic Integrated Circuit -- Rotation, Nanofocusing and Nonlinear Enhancement
Authors:
Alessandro Tuniz,
Oliver Bickerton,
Fernando J. Diaz,
Thomas Käsebier,
Ernst-Bernhard Kley,
Stefanie Kroker,
Stefano Palomba,
C. Martijn de Sterke
Abstract:
We introduce a modular approach for efficiently interfacing photonic integrated circuits with deep-sub-wavelength hybrid plasmonic functionality. We demonstrate that an off-the-shelf silicon-on-insulator waveguide can be post-processed into an integrated hybrid plasmonic circuit by evaporating a silica and gold nanolayer. The circuit consists of a plasmonic rotator and a nanofocusser module, which…
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We introduce a modular approach for efficiently interfacing photonic integrated circuits with deep-sub-wavelength hybrid plasmonic functionality. We demonstrate that an off-the-shelf silicon-on-insulator waveguide can be post-processed into an integrated hybrid plasmonic circuit by evaporating a silica and gold nanolayer. The circuit consists of a plasmonic rotator and a nanofocusser module, which together result in nano-scale, nonlinear wavelength conversion. We experimentally characterize each module, and demonstrate an intensity enhancement of $>200$ in a calculated mode area of $50\,{\rm nm}^2$ at $λ= 1320\,{\rm nm}$ using second harmonic generation. This work opens the door to customized plasmonic functionalities on industry-standard waveguides, bridging conventional integrated photonic circuits with hybrid plasmonic devices. This approach promises convenient access to nanometre-scale quantum information processing, nonlinear plasmonics, and single-molecule sensing.
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Submitted 30 August, 2019;
originally announced August 2019.
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Investigation of mechanical losses of thin silicon flexures at low temperatures
Authors:
R. Nawrodt,
C. Schwarz,
S. Kroker,
I. W. Martin,
F. Brückner,
L. Cunningham,
V. Große,
A. Grib,
D. Heinert,
J. Hough,
T. Käsebier,
E. B. Kley,
R. Neubert,
S. Reid,
S. Rowan,
P. Seidel,
M. Thürk,
A. Tünnermann
Abstract:
The investigation of the mechanical loss of different silicon flexures in a temperature region from 5 to 300 K is presented. The flexures have been prepared by different fabrication techniques. A lowest mechanical loss of $3\times10^{-8}$ was observed for a 130 $μ$m thick flexure at around 10 K. While the mechanical loss follows the thermoelastic predictions down to 50 K a difference can be observ…
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The investigation of the mechanical loss of different silicon flexures in a temperature region from 5 to 300 K is presented. The flexures have been prepared by different fabrication techniques. A lowest mechanical loss of $3\times10^{-8}$ was observed for a 130 $μ$m thick flexure at around 10 K. While the mechanical loss follows the thermoelastic predictions down to 50 K a difference can be observed at lower temperatures for different surface treatments. This surface loss will be limiting for all applications using silicon based oscillators at low temperatures. The extraction of a surface loss parameter using different results from our measurements and other references is presented. We focused on structures that are relevant for gravitational wave detectors. The surface loss parameter $α_s$ = 0.5 pm was obtained. This reveals that the surface loss of silicon is significantly lower than the surface loss of fused silica.
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Submitted 15 March, 2010;
originally announced March 2010.
