Showing 1–50 of 53 results for author: Kianinia, M

Quantum Efficiency the B-centre in hexagonal boron nitride

Authors: Karin Yamamura, Nathan Coste, Helen Zhi Jie Zeng, Milos Toth, Mehran Kianinia, Igor Aharonovich

Abstract: B-centres in hexagonal boron nitride (hBN) are gaining significant research interest for quantum photonics applications due to precise emitter positioning and highly reproducible emission wavelengths. Here, we leverage the layered nature of hBN to directly measure the quantum efficiency (QE) of single B-centres. The defects were engineered in a 35 nm flake of hBN using electron beam irradiation, a… ▽ More B-centres in hexagonal boron nitride (hBN) are gaining significant research interest for quantum photonics applications due to precise emitter positioning and highly reproducible emission wavelengths. Here, we leverage the layered nature of hBN to directly measure the quantum efficiency (QE) of single B-centres. The defects were engineered in a 35 nm flake of hBN using electron beam irradiation, and the local dielectric environment was altered by transferring a 250 nm hBN flake on top of the one containing the emitters. By analysing the resulting change in measured lifetimes, we determined the QE of B-centres in the thin flake of hBN, as well as after the transfer. Our results indicate that B-centres located in thin flakes can exhibit QEs higher than 40%. Near-unity QEs are achievable under reasonable Purcell enhancement for emitters embedded in thick flakes of hBN, highlighting their promise for quantum photonics applications. △ Less

Submitted 12 August, 2024; originally announced August 2024.

A universal mechanism for optically addressable solid-state spin pairs

Authors: Islay O. Robertson, Benjamin Whitefield, Sam C. Scholten, Priya Singh, Alexander J. Healey, Philipp Reineck, Mehran Kianinia, David A. Broadway, Igor Aharonovich, Jean-Philippe Tetienne

Abstract: Optically detected magnetic resonance (ODMR) has been observed from emitters in hexagonal boron nitride across a broad range of wavelengths, but so far an understanding of their microscopic structure and the physical origin of ODMR has been lacking. Here we perform comprehensive measurements and modelling of the spin-resolved photodynamics of ensembles and single emitters, and uncover a universal… ▽ More Optically detected magnetic resonance (ODMR) has been observed from emitters in hexagonal boron nitride across a broad range of wavelengths, but so far an understanding of their microscopic structure and the physical origin of ODMR has been lacking. Here we perform comprehensive measurements and modelling of the spin-resolved photodynamics of ensembles and single emitters, and uncover a universal model that accounts, and provides an intuitive physical explanation, for all key experimental features. The model assumes a pair of nearby point defects -- a primary optically active defect and a secondary defect. Charge transfer between the two defects creates a metastable weakly coupled spin pair with ODMR naturally arising from selection rules. Our optical-spin defect pair (OSDP) model resolves several previously open questions including the asymmetric envelope of the Rabi oscillations, the large variability in ODMR contrast amplitude and sign, and the wide spread in emission wavelength. It may also explain similar phenomena observed in other wide bandgap semiconductors such as GaN. The presented framework will be instrumental in guiding future theoretical and experimental efforts to study and engineer solid-state spin pairs and unlock their potential for quantum technology applications. △ Less

Submitted 18 July, 2024; originally announced July 2024.

Fast characterization of optically detected magnetic resonance spectra via data clustering

Authors: Dylan G. Stone, Benjamin Whitefield, Mehran Kianinia, Carlo Bradac

Abstract: Optically detected magnetic resonance (ODMR) has become a well-established and powerful technique for measuring the spin state of solid-state quantum emitters, at room temperature. Relying on spin-dependent recombination processes involving the emitters ground, excited and metastable states, ODMR is enabling spin-based quantum sensing of nanoscale electric and magnetic fields, temperature, strain… ▽ More Optically detected magnetic resonance (ODMR) has become a well-established and powerful technique for measuring the spin state of solid-state quantum emitters, at room temperature. Relying on spin-dependent recombination processes involving the emitters ground, excited and metastable states, ODMR is enabling spin-based quantum sensing of nanoscale electric and magnetic fields, temperature, strain and pressure, as well as imaging of individual electron and nuclear spins. Central to many of these sensing applications is the ability to reliably analyze ODMR data, as the resonance frequencies in these spectra map directly onto target physical quantities acting on the spin sensor. However, this can be onerous, as relatively long integration times -- from milliseconds up to tens of seconds -- are often needed to reach a signal-to-noise level suitable to determine said resonances using traditional fitting methods. Here, we present an algorithm based on data clustering that overcome this limitation and allows determining the resonance frequencies of ODMR spectra with better accuracy (~1.3x factor), higher resolution (~4.7x factor) and/or overall fewer data points (~5x factor) than standard approaches based on statistical inference. The proposed clustering algorithm (CA) is thus a powerful tool for many ODMR-based quantum sensing applications, especially when dealing with noisy and scarce data sets. △ Less

Submitted 28 May, 2024; originally announced May 2024.

Optimisation of electron irradiation for creating spin ensembles in hexagonal boron nitride

Authors: Alexander J Healey, Priya Singh, Islay O Robertson, Christopher Gavin, Sam C Scholten, David A Broadway, Philipp Reineck, Hiroshi Abe, Takeshi Ohshima, Mehran Kianinia, Igor Aharonovich, Jean-Philippe Tetienne

Abstract: Boron vacancy centre ($V_{\rm B}^-$) ensembles in hexagonal boron nitride (hBN) have attracted recent interest for their potential as two-dimensional solid-state quantum sensors. Irradiation is necessary for $V_{\rm B}^-$ creation, however, to date only limited attention has been given to optimising the defect production process, especially in the case of bulk irradiation with high-energy particle… ▽ More Boron vacancy centre ($V_{\rm B}^-$) ensembles in hexagonal boron nitride (hBN) have attracted recent interest for their potential as two-dimensional solid-state quantum sensors. Irradiation is necessary for $V_{\rm B}^-$ creation, however, to date only limited attention has been given to optimising the defect production process, especially in the case of bulk irradiation with high-energy particles, which offers scalability through the potential for creating ensembles in large volumes of material. Here we systematically investigate the effect of electron irradiation by varying the dose delivered to a range of hBN samples, which differ in their purity, and search for an optimum in measurement sensitivity. We find that moderate electron irradiation doses ($\approx 5\times 10^{18}$~cm$^{-2}$) appear to offer the best sensitivity, and also observe a dependence on the initial crystal purity. These results pave the way for the scalable and cost-effective production of hBN quantum sensors, and provide insight into the mechanisms limiting $V_{\rm B}^-$ spin properties. △ Less

Submitted 22 April, 2024; originally announced April 2024.

Comments: 8pages, 5 figures

Journal ref: Materials for Quantum Technology (2024) 4, 035701

Fibre-integrated van der Waals quantum sensor with an optimal cavity interface

Authors: Jong Sung Moon, Benjamin Whitefield, Lesley Spencer, Mehran Kianinia, Madeline Hennessey, Milos Toth, Woong Bae Jeon, Je-Hyung Kim, Igor Aharonovich

Abstract: Integrating quantum materials with fibre optics adds advanced functionalities to a variety of applications, and introduces fibre-based quantum devices such as remote sensors capable of probing multiple physical parameters. However, achieving optimal integration between quantum materials and fibres is challenging, particularly due to difficulties in fabrication of quantum elements with suitable dim… ▽ More Integrating quantum materials with fibre optics adds advanced functionalities to a variety of applications, and introduces fibre-based quantum devices such as remote sensors capable of probing multiple physical parameters. However, achieving optimal integration between quantum materials and fibres is challenging, particularly due to difficulties in fabrication of quantum elements with suitable dimensions and an efficient photonic interface to a commercial optical fibre. Here we demonstrate a new modality for a fibre-integrated van der Waals quantum sensor. We design and fabricate a hole-based circular Bragg grating cavity from hexagonal boron nitride (hBN), engineer optically active spin defects within the cavity, and integrate the cavity with an optical fibre using a deterministic pattern transfer technique. The fibre-integrated hBN cavity enables efficient excitation and collection of optical signals from spin defects in hBN, thereby enabling all-fibre integrated quantum sensors. Moreover, we demonstrate remote sensing of a ferromagnetic material and of arbitrary magnetic fields. All in all, the hybrid fibre-based quantum sensing platform may pave the way to a new generation of robust, remote, multi-functional quantum sensors. △ Less

Submitted 26 February, 2024; originally announced February 2024.

Comments: 13 Pages, 4 Figures

Near-coherent quantum emitters in hexagonal boron nitride with discrete polarization axes

Authors: Jake Horder, Dominic Scognamiglio, Ádám Ganyecz, Viktor Ivády, Mehran Kianinia, Milos Toth, Igor Aharonovich

Abstract: Hexagonal boron nitride (hBN) has recently gained attention as a solid state host of quantum emitters. However, hBN emitters reported to date lack the properties needed for their deployment in scalable quantum technologies. Here we employ spectral hole burning spectroscopy and resonant polarization measurements to observe nearly-coherent hBN quantum emitters, both as singles and in ensembles, with… ▽ More Hexagonal boron nitride (hBN) has recently gained attention as a solid state host of quantum emitters. However, hBN emitters reported to date lack the properties needed for their deployment in scalable quantum technologies. Here we employ spectral hole burning spectroscopy and resonant polarization measurements to observe nearly-coherent hBN quantum emitters, both as singles and in ensembles, with three discrete polarization axes indicative of a C2v symmetry defect. Our results constitute an important milestone towards the implementation of hBN quantum emitters in integrated quantum photonics. △ Less

Submitted 24 May, 2024; v1 submitted 18 February, 2024; originally announced February 2024.

Comments: 10 pages, 4 figures

Multi-species optically addressable spin defects in a van der Waals material

Authors: Sam C. Scholten, Priya Singh, Alexander J. Healey, Islay O. Robertson, Galya Haim, Cheng Tan, David A. Broadway, Lan Wang, Hiroshi Abe, Takeshi Ohshima, Mehran Kianinia, Philipp Reineck, Igor Aharonovich, Jean-Philippe Tetienne

Abstract: Optically addressable spin defects hosted in two-dimensional van der Waals materials represent a new frontier for quantum technologies, promising to lead to a new class of ultrathin quantum sensors and simulators. Recently, hexagonal boron nitride (hBN) has been shown to host several types of optically addressable spin defects, thus offering a unique opportunity to simultaneously address and utili… ▽ More Optically addressable spin defects hosted in two-dimensional van der Waals materials represent a new frontier for quantum technologies, promising to lead to a new class of ultrathin quantum sensors and simulators. Recently, hexagonal boron nitride (hBN) has been shown to host several types of optically addressable spin defects, thus offering a unique opportunity to simultaneously address and utilise various spin species in a single material. Here we demonstrate an interplay between two separate spin species within a single hBN crystal, namely $S=1$ boron vacancy defects and visible emitter spins. We unambiguously prove that the visible emitters are $S=\frac{1}{2}$ spins and further demonstrate room temperature coherent control and optical readout of both spin species. Importantly, by tuning the two spin species into resonance with each other, we observe cross-relaxation indicating strong inter-species dipolar coupling. We then demonstrate magnetic imaging using the $S=\frac{1}{2}$ defects, both under ambient and cryogenic conditions, and leverage their lack of intrinsic quantization axis to determine the anisotropic magnetic susceptibility of a test sample. Our results establish hBN as a versatile platform for quantum technologies in a van der Waals host at room temperature. △ Less

Submitted 25 June, 2024; v1 submitted 28 June, 2023; originally announced June 2023.

Journal ref: Nat. Commun. 15, 6727 (2024)

Optically addressable spin defects coupled to bound states in the continuum metasurfaces

Authors: Luca Sortino, Angus Gale, Lucca Kühner, Chi Li, Jonas Biechteler, Fedja J. Wendisch, Mehran Kianinia, Haoran Ren, Milos Toth, Stefan A. Maier, Igor Aharonovich, Andreas Tittl

Abstract: Van der Waals (vdW) materials, including hexagonal boron nitride (hBN), are layered crystalline solids with appealing properties for investigating light-matter interactions at the nanoscale. hBN has emerged as a versatile building block for nanophotonic structures, and the recent identification of native optically addressable spin defects has opened up exciting possibilities in quantum technologie… ▽ More Van der Waals (vdW) materials, including hexagonal boron nitride (hBN), are layered crystalline solids with appealing properties for investigating light-matter interactions at the nanoscale. hBN has emerged as a versatile building block for nanophotonic structures, and the recent identification of native optically addressable spin defects has opened up exciting possibilities in quantum technologies. However, these defects exhibit relatively low quantum efficiencies and a broad emission spectrum, limiting potential applications. Optical metasurfaces present a novel approach to boost light emission efficiency, offering remarkable control over light-matter coupling at the sub-wavelength regime. Here, we propose and realise a monolithic scalable integration between intrinsic spin defects in hBN metasurfaces and high quality (Q) factor resonances leveraging quasi-bound states in the continuum (qBICs). Coupling between spin defect ensembles and qBIC resonances delivers a 25-fold increase in photoluminescence intensity, accompanied by spectral narrowing to below 4 nm linewidth facilitated by Q factors exceeding $10^2$. Our findings demonstrate a new class of spin based metasurfaces and pave the way towards vdW-based nanophotonic devices with enhanced efficiency and sensitivity for quantum applications in imaging, sensing, and light emission. △ Less

Submitted 6 March, 2024; v1 submitted 9 June, 2023; originally announced June 2023.

Comments: accepted version

Journal ref: Nature Communications, volume 15, Article number: 2008 (2024)

Manipulating the Charge State of Spin Defects in Hexagonal Boron Nitride

Authors: Angus Gale, Dominic Scognamiglio, Ivan Zhigulin, Benjamin Whitefield, Mehran Kianinia, Igor Aharonovich, Milos Toth

Abstract: Negatively charged boron vacancies ($\small{V_B^-}$) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can exist in a number of charge states in the hBN lattice, but only the -1 state has spin-dependent photoluminescence and acts as a spin-photon interface. Here, we… ▽ More Negatively charged boron vacancies ($\small{V_B^-}$) in hexagonal boron nitride (hBN) have recently gained interest as spin defects for quantum information processing and quantum sensing by a layered material. However, the boron vacancy can exist in a number of charge states in the hBN lattice, but only the -1 state has spin-dependent photoluminescence and acts as a spin-photon interface. Here, we investigate charge state switching of $\small{V_B}$ defects under laser and electron beam excitation. We demonstrate deterministic, reversible switching between the -1 and 0 states ($\small{V_B^- \rightleftharpoons V_B^0 + e^-}$), occurring at rates controlled by excess electrons or holes injected into hBN by a layered heterostructure device. Our work provides a means to monitor and manipulate the $\small{V_B}$ charge state, and to stabilize the -1 state which is a prerequisite for optical spin manipulation and readout of the defect. △ Less

Submitted 9 May, 2023; originally announced May 2023.

Framework for engineering of spin defects in hexagonal boron nitride by focused ion beams

Authors: Madeline Hennessey, Benjamin Whitefield, Angus Gale, John A Scott, Mehran Kianinia, Igor Aharonovich, Milos Toth

Abstract: Hexagonal boron nitride (hBN) is gaining interest as a wide bandgap van der Waals host of optically active spin defects for quantum technologies. Most studies of the spin-photon interface in hBN focus on the negatively charged boron vacancy (VB-) defect, which is typically fabricated by ion irradiation. However, VB- fabrication methods often lack robustness and reproducibility when applied to thin… ▽ More Hexagonal boron nitride (hBN) is gaining interest as a wide bandgap van der Waals host of optically active spin defects for quantum technologies. Most studies of the spin-photon interface in hBN focus on the negatively charged boron vacancy (VB-) defect, which is typically fabricated by ion irradiation. However, VB- fabrication methods often lack robustness and reproducibility when applied to thin flakes (less than 10 nm) of hBN. Here we identify mechanisms that both promote and inhibit VB- generation and optimize ion beam parameters for site-specific fabrication of optically active VB- centers. We emphasize conditions accessible by high resolution focused ion beam (FIB) systems, and present a framework for VB- fabrication in hBN flakes of arbitrary thickness for applications in quantum sensing and quantum information processing. △ Less

Submitted 9 November, 2023; v1 submitted 12 March, 2023; originally announced March 2023.

Comments: 11 pages, 5 figures

Monolithic Platform for Integrated Quantum Photonics with Hexagonal Boron Nitride

Authors: Milad Nonahal, Chi Li, Haoran Ren, Lesley Spencer, Mehran Kianinia, Milos Toth, Igor Aharonovich

Abstract: Integrated quantum photonics (IQP) provides a path to practical, scalable quantum computation, communications and information processing. Realization of an IQP platform requires integration of quantum emitters with high quality photonic circuits. However, the range of materials for monolithic platforms is limited by the simultaneous need for a high-quality single photon source, high optical perfor… ▽ More Integrated quantum photonics (IQP) provides a path to practical, scalable quantum computation, communications and information processing. Realization of an IQP platform requires integration of quantum emitters with high quality photonic circuits. However, the range of materials for monolithic platforms is limited by the simultaneous need for a high-quality single photon source, high optical performance and availability of scalable nanofabrication techniques. Here we demonstrate the fabrication of IQP components from the recently emerged quantum material hexagonal boron nitride (hBN), including tapered waveguides, microdisks, and 1D and 2D photonic crystal cavities. Resonators with quality factors greater than 4000 are achieved, and we engineer proof-of-principle complex, free-standing IQP circuitry fabricated from single crystal hBN. Our results show the potential of hBN for scalable integrated quantum technologies. △ Less

Submitted 6 March, 2023; originally announced March 2023.

Detection of paramagnetic spins with an ultrathin van der Waals quantum sensor

Authors: Islay O. Robertson, Sam C. Scholten, Priya Singh, Alexander J. Healey, Fernando Meneses, Philipp Reineck, Hiroshi Abe, Takeshi Ohshima, Mehran Kianinia, Igor Aharonovich, Jean-Philippe Tetienne

Abstract: Detecting magnetic noise from small quantities of paramagnetic spins is a powerful capability for chemical, biochemical, and medical analysis. Quantum sensors based on optically addressable spin defects in bulk semiconductors are typically employed for such purposes, but the 3D crystal structure of the sensor inhibits the sensitivity by limiting the proximity of the defects to the target spins. He… ▽ More Detecting magnetic noise from small quantities of paramagnetic spins is a powerful capability for chemical, biochemical, and medical analysis. Quantum sensors based on optically addressable spin defects in bulk semiconductors are typically employed for such purposes, but the 3D crystal structure of the sensor inhibits the sensitivity by limiting the proximity of the defects to the target spins. Here we demonstrate the detection of paramagnetic spins using spin defects hosted in hexagonal boron nitride (hBN), a van der Waals material which can be exfoliated into the 2D regime. We first create negatively charged boron vacancy (V$_{\rm B}^-$) defects in a powder of ultrathin hBN nanoflakes ($<10$~atomic monolayers thick on average) and measure the longitudinal spin relaxation time ($T_1$) of this system. We then decorate the dry hBN nanopowder with paramagnetic Gd$^{3+}$ ions and observe a clear $T_1$ quenching, under ambient conditions, consistent with the added magnetic noise. Finally, we demonstrate the possibility of performing spin measurements including $T_1$ relaxometry using solution-suspended hBN nanopowder. Our results highlight the potential and versatility of the hBN quantum sensor for a range of sensing applications, and pave the way towards the realisation of a truly 2D, ultrasensitive quantum sensor. △ Less

Submitted 21 February, 2023; originally announced February 2023.

Comments: 19 pages, 11 figures

Journal ref: ACS Nano, 17, 14, 13408-13417 (2023)

Coupling spin defects in hexagonal boron nitride to a microwave cavity

Authors: Thinh N. Tran, Angus Gale, Benjamin Whitefield, Milos Toth, Igor Aharonovich, Mehran Kianinia

Abstract: Optically addressable spin defects in hexagonal boron nitride (hBN) have become a promising platform for quantum sensing. While sensitivity of these defects are limited by their interactions with the spin environment in hBN, inefficient microwave delivery can further reduce their sensitivity. Hare, we design and fabricate a microwave double arc resonator for efficient transferring of the microwave… ▽ More Optically addressable spin defects in hexagonal boron nitride (hBN) have become a promising platform for quantum sensing. While sensitivity of these defects are limited by their interactions with the spin environment in hBN, inefficient microwave delivery can further reduce their sensitivity. Hare, we design and fabricate a microwave double arc resonator for efficient transferring of the microwave field at 3.8 GHz. The spin transitions in the ground state of VB- are coupled to the frequency of the microwave cavity which results in enhanced optically detected magnetic resonance (ODMR) contrast. In addition, the linewidth of the ODMR signal further reduces, achieving a magnetic field sensitivity as low as 42.4 microtesla per square root of hertz. Our robust and scalable device engineering is promising for future employment of spin defects in hBN for quantum sensing. △ Less

Submitted 17 January, 2023; originally announced January 2023.

Photophysics of blue quantum emitters in hexagonal Boron Nitride

Authors: Ivan Zhigulin, Karin Yamamura, Viktor Ivády, Angus Gale, Jake Horder, Charlene J. Lobo, Mehran Kianinia, Milos Toth, Igor Aharonovich

Abstract: Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statisti… ▽ More Colour centres in hexagonal boron nitride (hBN) have emerged as intriguing contenders for integrated quantum photonics. In this work, we present detailed photophysical analysis of hBN single emitters emitting at the blue spectral range. The emitters are fabricated by different electron beam irradiation and annealing conditions and exhibit narrow-band luminescence centred at 436 nm. Photon statistics as well as rigorous photodynamics analysis unveils potential level structure of the emitters, which suggests lack of a metastable state, supported by a theoretical analysis. The potential defect can have an electronic structure with fully occupied defect state in the lower half of the hBN band gap and empty defect state in the upper half of the band gap. Overall, our results are important to understand the photophysical properties of the emerging family of blue quantum emitters in hBN as potential sources for scalable quantum photonic applications. △ Less

Submitted 10 January, 2023; originally announced January 2023.

Comments: 10 pages, 4 figures

Stark effect of quantum blue emitters in hBN

Authors: Ivan Zhigulin, Jake Horder, Victor Ivady, Simon J. U. White, Angus Gale, Chi Li, Charlene J. Lobo, Milos Toth, Igor Aharonovich, Mehran Kianinia

Abstract: Inhomogeneous broadening is a major limitation for the application of quantum emitters in hBN to integrated quantum photonics. Here we demonstrate that blue emitters with an emission wavelength of 436 nm are less sensitive to electric fields than other quantum emitter species in hBN. Our measurements of Stark shifts indicate negligible transition dipole moments for these centers with dominant quad… ▽ More Inhomogeneous broadening is a major limitation for the application of quantum emitters in hBN to integrated quantum photonics. Here we demonstrate that blue emitters with an emission wavelength of 436 nm are less sensitive to electric fields than other quantum emitter species in hBN. Our measurements of Stark shifts indicate negligible transition dipole moments for these centers with dominant quadratic stark effect. Using these results, we employed DFT calculations to identify possible point defects with small transition dipole moments, which may be the source of blue emitters in hBN. △ Less

Submitted 1 August, 2022; originally announced August 2022.

Coherence properties of electron beam activated emitters in hexagonal boron nitride under resonant excitation

Authors: Jake Horder, Simon White, Angus Gale, Chi Li, Kenji Watanabe, Takashi Taniguchi, Mehran Kianinia, Igor Aharonovich, Milos Toth

Abstract: Two dimensional materials are becoming increasingly popular as a platform for studies of quantum phenomena and for the production of prototype quantum technologies. Quantum emitters in 2D materials can host two level systems that can act as qubits for quantum information processing. Here, we characterize the behavior of position-controlled quantum emitters in hexagonal boron nitride at cryogenic t… ▽ More Two dimensional materials are becoming increasingly popular as a platform for studies of quantum phenomena and for the production of prototype quantum technologies. Quantum emitters in 2D materials can host two level systems that can act as qubits for quantum information processing. Here, we characterize the behavior of position-controlled quantum emitters in hexagonal boron nitride at cryogenic temperatures. Over two dozen sites, we observe an ultra-narrow distribution of the zero phonon line at ~436 nm, together with strong linearly polarized emission. We employ resonant excitation to characterize the emission lineshape and find spectral diffusion and phonon broadening contribute to linewidths in the range 1-2 GHz. Rabi oscillations are observed at a range of resonant excitation powers, and under 1 $μ$W excitation a coherent superposition is maintained up to 0.90 ns. Our results are promising for future employment of quantum emitters in hBN for scalable quantum technologies. △ Less

Submitted 18 May, 2022; originally announced May 2022.

Comments: 13 pages, 4 figures

Coupling Spin Defects in Hexagonal Boron Nitride to Titanium Oxide Ring Resonators

Authors: Milad Nonahal, Chi Li, Febiana Tjiptoharsono, Lu Ding, Connor Stewart, John Scott, Milos Toth, Son Tung Ha, Mehran Kianinia, Igor Aharonovich

Abstract: Spin-dependent optical transitions are attractive for a plethora of applications in quantum technologies. Here we report on utilization of high quality ring resonators fabricated from TiO2 to enhance the emission from negatively charged boron vacancies in hexagonal Boron Nitride. We show that the emission from these defects can efficiently couple into the whispering gallery modes of the ring reson… ▽ More Spin-dependent optical transitions are attractive for a plethora of applications in quantum technologies. Here we report on utilization of high quality ring resonators fabricated from TiO2 to enhance the emission from negatively charged boron vacancies in hexagonal Boron Nitride. We show that the emission from these defects can efficiently couple into the whispering gallery modes of the ring resonators. Optically coupled boron vacancy showed photoluminescence contrast in optically detected magnetic resonance signals from the hybrid coupled devices. Our results demonstrate a practical method for integration of spin defects in 2D materials with dielectric resonators which is a promising platform for quantum technologies. △ Less

Submitted 9 May, 2022; originally announced May 2022.

Monolithic Silicon Carbide Metalenses

Authors: Otto Cranwell Schaeper, Ziwei Yang, Mehran Kianinia, Johannes E. Fröch, Andrei Komar, Zhao Mu, Weibo Gao, Dragomir Neshev, Igor Aharonovich

Abstract: Silicon carbide has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality silicon carbide a critical aspect for the advancement of scalable on-chip networks. In this work, we numerically design, fabricate and demonstrate the performance of monolithic metalenses from SiC suitable f… ▽ More Silicon carbide has emerged as a promising material platform for quantum photonics and nonlinear optics. These properties make the development of integrated photonic components in high-quality silicon carbide a critical aspect for the advancement of scalable on-chip networks. In this work, we numerically design, fabricate and demonstrate the performance of monolithic metalenses from SiC suitable for on-chip optical operations. We engineer two distinct lenses, with parabolic and cubic phase profiles, operating in the near infrared spectral range, which is of interest for quantum and photonic applications. We support the lens fabrication by optical transmission measurement and characterize the focal points of the lenses. Our results will accelerate the development of SiC nanophotonic devices and aid in an on chip integration of quantum emitters with meta-optical components. △ Less

Submitted 29 January, 2022; originally announced January 2022.

Quantum microscopy with van der Waals heterostructures

Authors: A. J. Healey, S. C. Scholten, T. Yang, J. A. Scott, G. J. Abrahams, I. O. Robertson, X. F. Hou, Y. F. Guo, S. Rahman, Y. Lu, M. Kianinia, I. Aharonovich, J. -P. Tetienne

Abstract: Quantum microscopes based on solid-state spin quantum sensors have recently emerged as powerful tools for probing material properties and physical processes in regimes not accessible to classical sensors, especially on the nanoscale. Such microscopes have already found utility in a variety of problems, from imaging magnetism and charge transport in nanoscale devices, to mapping remanent magnetic f… ▽ More Quantum microscopes based on solid-state spin quantum sensors have recently emerged as powerful tools for probing material properties and physical processes in regimes not accessible to classical sensors, especially on the nanoscale. Such microscopes have already found utility in a variety of problems, from imaging magnetism and charge transport in nanoscale devices, to mapping remanent magnetic fields from ancient rocks and biological organisms. However, applications of quantum microscopes have so far relied on sensors hosted in a rigid, three-dimensional crystal, typically diamond, which limits their ability to closely interact with the sample under study. Here we demonstrate a versatile and robust quantum microscope using quantum sensors embedded within a thin layer of a van der Waals (vdW) material, hexagonal boron nitride (hBN). To showcase the capabilities of this platform, we assemble several active vdW heterostructures, with an hBN layer acting as the quantum sensor. We demonstrate time-resolved, simultaneous temperature and magnetic imaging near the Curie temperature of a vdW ferromagnet as well as apply this unique microscope to map out charge currents and Joule heating in graphene. By enabling intimate proximity between sensor and sample, potentially down to a single atomic layer, the hBN quantum sensor represents a paradigm shift for nanoscale quantum sensing and microscopy. Moreover, given the ubiquitous use of hBN in modern materials and condensed matter physics research, we expect our technique to find rapid and broad adoption in these fields, further motivated by the prospect of performing in-situ chemical analysis and noise spectroscopy using advanced quantum sensing protocols. △ Less

Submitted 6 December, 2021; originally announced December 2021.

Journal ref: Nature Physics 19, 87-91 (2023)

Electrical Control of Quantum Emitters in a Van der Waals Heterostructure

Authors: Simon J. U. White, Tieshan Yang, Nikolai Dontschuk, Chi Li, Zai-Quan Xu, Mehran Kianinia, Alastair Stacey, Milos Toth, Igor Aharonovich

Abstract: Controlling and manipulating individual quantum systems in solids underpins the growing interest in development of scalable quantum technologies. Recently, hexagonal boron nitride has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters. However, the large band gap of hBN and the lack of efficient doping inhibits electrical tr… ▽ More Controlling and manipulating individual quantum systems in solids underpins the growing interest in development of scalable quantum technologies. Recently, hexagonal boron nitride has garnered significant attention in quantum photonic applications due to its ability to host optically stable quantum emitters. However, the large band gap of hBN and the lack of efficient doping inhibits electrical triggering and limits opportunities to study electrical control of emitters. Here, we show an approach to electrically modulate quantum emitters in n hBN graphene van der Waals heterostructure. We show that quantum emitters in hBN can be reversibly activated and modulated by applying a bias across the device. Notably, a significant number of quantum emitters are intrinsically dark, and become optically active at non-zero voltages. To explain the results, we provide a heuristic electrostatic model of this unique behaviour. Finally, employing these devices we demonstrate a nearly coherent source with linewidths of 160 MHz. Our results enhance the potential of hBN for tuneable solid state quantum emitters for the growing field of quantum information science. △ Less

Submitted 4 November, 2021; originally announced November 2021.

Purcell enhancement of a cavity-coupled emitter in hexagonal boron nitride

Authors: Johannes E. Fröch, Chi Li, Yongliang Chen, Milos Toth, Mehran Kianinia, Sejeong Kim, Igor Aharonovich

Abstract: Integration of solid state quantum emitters into nanophotonic circuits is a critical step towards fully on-chip quantum photonic based technologies. Among potential materials platforms, quantum emitters in hexagonal boron nitride have emerged over the last years as viable candidate. While the fundamental physical properties have been intensively studied over the last years, only few works have foc… ▽ More Integration of solid state quantum emitters into nanophotonic circuits is a critical step towards fully on-chip quantum photonic based technologies. Among potential materials platforms, quantum emitters in hexagonal boron nitride have emerged over the last years as viable candidate. While the fundamental physical properties have been intensively studied over the last years, only few works have focused on the emitter integration into photonic resonators. Yet, for a potential quantum photonic material platform, the integration with nanophotonic cavities is an important cornerstone, as it enables the deliberate tuning of the spontaneous emission and the improved readout of distinct transitions for that quantum emitter. In this work, we demonstrate the resonant tuning of an integrated monolithic hBN quantum emitter in a photonic crystal cavity through gas condensation at cryogenic temperature. We resonantly coupled the zero phonon line of the emitter to a cavity mode and demonstrate emission enhancement and lifetime reduction, with an estimation for the Purcell factor of ~ 15. △ Less

Submitted 11 August, 2021; originally announced August 2021.

Coupling Spin Defects in a Layered Material to Nanoscale Plasmonic Cavities

Authors: Noah Mendelson, Ritika Ritika, Mehran Kianinia, John Scott, Sejeong Kim, Johannes E. Fröch, Camilla Gazzana, Mika Westerhausen, Licheng Xiao, Seyed Sepehr Mohajerani, Stefan Strauf, Milos Toth, Igor Aharonovich, Zai-Quan Xu

Abstract: Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB) centres, are emerging candidates for quantum sensing. However, the VB defects suffer from low quantum efficiency and as a result exhibit weak photoluminescence. In this work, we demonstrate a scalable approach to dramatically enhance the VB- emission by coupling to a plasmonic gap cavity. The plasmo… ▽ More Spin defects in hexagonal boron nitride, and specifically the negatively charged boron vacancy (VB) centres, are emerging candidates for quantum sensing. However, the VB defects suffer from low quantum efficiency and as a result exhibit weak photoluminescence. In this work, we demonstrate a scalable approach to dramatically enhance the VB- emission by coupling to a plasmonic gap cavity. The plasmonic cavity is composed of a flat gold surface and a silver cube, with few-layer hBN flakes positioned in between. Employing these plasmonic cavities, we extracted two orders of magnitude in photoluminescence enhancement associated with a corresponding 2 fold enhancement in optically detected magnetic resonance contrast. The work will be pivotal to progress in quantum sensing employing 2D materials, and realisation of nanophotonic devices with spin defects in hexagonal boron nitride. △ Less

Submitted 5 August, 2021; originally announced August 2021.

Coupling spin defects in hexagonal boron nitride to monolithic bullseye cavities

Authors: Johannes E. Fröch, Lesley Spencer, Mehran Kianinia, Daniel Totonjian, Minh Nguyen, Vladimir Dyakonov, Milos Toth, Sejeong Kim, Igor Aharonovich

Abstract: Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely designed bullseye cavities. We show that the all monolithic hBN cavity system exhibits an order of magnitude enhancement in the emission of the coupled boron vaca… ▽ More Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely designed bullseye cavities. We show that the all monolithic hBN cavity system exhibits an order of magnitude enhancement in the emission of the coupled boron vacancy spin defects. In addition, by comparative finite difference time domain modelling, we shed light on the emission dipole orientation, which has not been experimentally demonstrated at this point. Beyond that, the coupled spin system exhibits an enhanced contrast in optically detected magnetic resonance readout and improved signal to noise ratio. Thus, our experimental results supported by simulations, constitute a first step towards integration of hBN spin defects with photonic resonators for a scalable spin photon interface. △ Less

Submitted 25 May, 2021; originally announced May 2021.

Phonon dephasing and spectral diffusion of quantum emitters in hexagonal Boron Nitride

Authors: Simon White, Connor Stewart, Alexander S. Solntsev, Chi Li, Milos Toth, Mehran Kianinia, Igor Aharonovich

Abstract: Quantum emitters in hexagonal boron nitride (hBN) are emerging as bright and robust sources of single photons for applications in quantum optics. In this work we present detailed studies on the limiting factors to achieve Fourier Transform limited spectral lines. Specifically, we study phonon dephasing and spectral diffusion of quantum emitters in hBN via resonant excitation spectroscopy at cryoge… ▽ More Quantum emitters in hexagonal boron nitride (hBN) are emerging as bright and robust sources of single photons for applications in quantum optics. In this work we present detailed studies on the limiting factors to achieve Fourier Transform limited spectral lines. Specifically, we study phonon dephasing and spectral diffusion of quantum emitters in hBN via resonant excitation spectroscopy at cryogenic temperatures. We show that the linewidths of hBN quantum emitters are phonon broadened, even at 5K, with typical values of the order of one GHz. While spectral diffusion dominates at increasing pump powers, it can be minimized by working well below saturation excitation power. Our results are important for future utilization of quantum emitters in hBN for quantum interference experiments. △ Less

Submitted 25 May, 2021; originally announced May 2021.

Sub-nanoscale Temperature, Magnetic Field and Pressure sensing with Spin Centers in 2D hexagonal Boron Nitride

Authors: Andreas Gottscholl, Matthias Diez, Victor Soltamov, Christian Kasper, Andreas Sperlich, Mehran Kianinia, Carlo Bradac, Igor Aharonovich, Vladimir Dyakonov

Abstract: Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are poss… ▽ More Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence (PL) of the $V_B^-$. Specifically, we find that the frequency shift in optically detected magnetic resonance (ODMR) measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. Our work is important for the future use of spin-rich hBN layers as intrinsic sensors in heterostructures of functionalized 2D materials. △ Less

Submitted 22 February, 2021; originally announced February 2021.

Comments: 9 pages, 4 figures, 2 tables

Journal ref: Nature Communications 12, 4480 (2021)

Recoil Implantation Using Gas-Phase Precursor Molecules

Authors: Angus Gale, Johannes E. Fröch, Mehran Kianinia, James Bishop, Igor Aharonovich, Milos Toth

Abstract: Ion implantation underpins a vast range of devices and technologies that require precise control over the physical, chemical, electronic, magnetic and optical properties of materials. A variant termed recoil implantation - in which a precursor is deposited onto a substrate as a thin film and implanted via momentum transfer from incident energetic ions - has a number of compelling advantages, parti… ▽ More Ion implantation underpins a vast range of devices and technologies that require precise control over the physical, chemical, electronic, magnetic and optical properties of materials. A variant termed recoil implantation - in which a precursor is deposited onto a substrate as a thin film and implanted via momentum transfer from incident energetic ions - has a number of compelling advantages, particularly when performed using an inert ion nano-beam [Fröch et al., Nat Commun 11, 5039 (2020)]. However, a major drawback of this approach is that the implant species are limited to the constituents of solid thin films. Here we overcome this limitation by demonstrating recoil implantation using gas-phase precursors. Specifically, we fabricate nitrogen-vacancy (NV) color centers in diamond using an Ar ion beam and the nitrogen-containing precursor gases N2, NH3 and NF3. Our work expands the applicability of recoil implantation to most of the periodic table, and to applications in which thin film deposition or removal is impractical. △ Less

Submitted 9 February, 2021; originally announced February 2021.

Femtosecond Laser Writing of Spin Defects in Hexagonal Boron Nitride

Authors: Xingyu Gao, Siddhant Pandey, Mehran Kianinia, Jonghoon Ahn, Peng Ju, Igor Aharonovich, Niranjan Shivaram, Tongcang Li

Abstract: Optically active spin defects in wide-bandgap materials have many potential applications in quantum information and quantum sensing. Spin defects in two-dimensional layered van der Waals materials are just emerging to be investigated. Here we demonstrate that optically-addressable spin ensembles in hexagonal boron nitride (hBN) can be generated by femtosecond laser irradiation. We observe opticall… ▽ More Optically active spin defects in wide-bandgap materials have many potential applications in quantum information and quantum sensing. Spin defects in two-dimensional layered van der Waals materials are just emerging to be investigated. Here we demonstrate that optically-addressable spin ensembles in hexagonal boron nitride (hBN) can be generated by femtosecond laser irradiation. We observe optically detected magnetic resonance (ODMR) of hBN spin defects created by laser irradiation. We show that the creation of spin defects in hBN is strongly affected by the pulse energy of the femtosecond laser. When the laser pulse number is less than a few thousand, the pulse number only affects the density of defects but not the type of defects. With proper laser parameters, spin defects can be generated with a high probability of success. Our work provides a convenient way to create spin defects in hBN by femtosecond laser writing, which shows promising prospects for quantum technologies. △ Less

Submitted 3 February, 2021; v1 submitted 6 December, 2020; originally announced December 2020.

Comments: 6 figures

Journal ref: ACS Photonics, 8, 994-1000 (2021)

Room Temperature Coherent Control of Spin Defects in hexagonal Boron Nitride

Authors: Andreas Gottscholl, Matthias Diez, Victor Soltamov, Christian Kasper, Andreas Sperlich, Mehran Kianinia, Carlo Bradac, Igor Aharonovich, Vladimir Dyakonov

Abstract: Optically active defects in solids with accessible spin states are promising candidates for solid state quantum information and sensing applications. To employ these defects as quantum building blocks, coherent manipulation of their spin state is required. Here we realize coherent control of ensembles of boron vacancy (V$_B^-$) centers in hexagonal boron nitride (hBN). Specifically, by applying pu… ▽ More Optically active defects in solids with accessible spin states are promising candidates for solid state quantum information and sensing applications. To employ these defects as quantum building blocks, coherent manipulation of their spin state is required. Here we realize coherent control of ensembles of boron vacancy (V$_B^-$) centers in hexagonal boron nitride (hBN). Specifically, by applying pulsed spin resonance protocols, we measure spin-lattice relaxation time ($T_1$) of 18 $μ$s and spin coherence time ($T_2$) of 2 $μ$s at room temperature. The spin-lattice relaxation time increases by three orders of magnitude at cryogenic temperature. Furthermore, employing a two- and three-pulse electron spin-echo envelope modulation (ESEEM) we separate the quadrupole and hyperfine interactions with the surrounding nuclei. Finally, by applying a method to decouple the spin state from its inhomogeneous nuclear environment - a "hole-burning" - the spectral optically detected magnetic resonance linewidth is significantly reduced to several tens of kHz, thus extending the spin coherence time by a factor of three. Our results are important for employment of van der Waals materials for quantum technologies, specifically in the context of using hBN as a high-resolution quantum sensor for hybrid quantum systems including 2D heterostructures, nanoscale devices and emerging atomically thin magnets. △ Less

Submitted 23 October, 2020; originally announced October 2020.

Journal ref: Science Advances Vol. 7, no. 14, eabf3630 (2021)

Optical repumping of resonantly excited quantum emitters in hexagonal boron nitride

Authors: Simon J. U. White, Ngoc My Hanh Duong, Alexander S. Solntsev, Je-Hyung Kim, Mehran Kianinia, Igor Aharonovich

Abstract: Resonant excitation of solid-state quantum emitters enables coherent control of quantum states and generation of coherent single photons, which are required for scalable quantum photonics applications. However, these systems can often decay to one or more intermediate dark states or spectrally jump, resulting in the lack of photons on resonance. Here, we present an optical co-excitation scheme whi… ▽ More Resonant excitation of solid-state quantum emitters enables coherent control of quantum states and generation of coherent single photons, which are required for scalable quantum photonics applications. However, these systems can often decay to one or more intermediate dark states or spectrally jump, resulting in the lack of photons on resonance. Here, we present an optical co-excitation scheme which uses a weak non-resonant laser to reduce transitions to a dark state and amplify the photoluminescence from quantum emitters in hexagonal boron nitride (hBN). Utilizing a two-laser repumping scheme, we achieve optically stable resonance fluorescence of hBN emitters and an overall increase of ON time by an order of magnitude compared to only resonant excitation. Our results are important for the deployment of atom-like defects in hBN as reliable building blocks for quantum photonic applications. △ Less

Submitted 11 September, 2020; originally announced September 2020.

Comments: Accepted to Physical Review Applied

Journal ref: Phys. Rev. Applied 14, 044017 (2020)

Photoluminescence and photochemistry of the $V_B^-$ defect in hexagonal boron nitride

Authors: Jeffrey R. Reimers, Jun Shen, Mehran Kianinia, Carlo Bradac, Igor Aharonovich, Michael J. Ford, Piotr Piecuch

Abstract: Extensive photochemical and spectroscopic properties of the $V_B^-$ defect in hexagonal boron nitride are calculated, concluding that the observed photoemission associated with recently observed optically-detected magnetic resonance is most likely of (1)3E" to (1)3A2' origin. Rapid intersystem crossing from the defect's triplet to singlet manifolds explains the observed short excited-state lifetim… ▽ More Extensive photochemical and spectroscopic properties of the $V_B^-$ defect in hexagonal boron nitride are calculated, concluding that the observed photoemission associated with recently observed optically-detected magnetic resonance is most likely of (1)3E" to (1)3A2' origin. Rapid intersystem crossing from the defect's triplet to singlet manifolds explains the observed short excited-state lifetime and very low quantum yield. New experimental results reveal smaller intrinsic spectral bandwidths than previously recognized, interpreted in terms spectral narrowing and zero-phonon-line shifting induced by the Jahn-Teller effect. Different types of computational methods are applied to map out the complex triplet and singlet defect manifolds, including the doubly ionised formulation of the equation-of-motion coupled-cluster theory that is designed to deal with the open-shell nature of defect states, and mixed quantum-mechanics/molecular-mechanics schemes enabling 5763-atom simulations. Two other energetically feasible spectral assignments from amongst the singlet and triplet manifolds are considered, but ruled out based on inappropriate photochemical properties. △ Less

Submitted 29 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. B 102, 144105 (2020)

Engineering spin defects in hexagonal boron nitride

Authors: Mehran Kianinia, Simon White, Johannes E. Fröch, Carlo Bradac, Igor Aharonovich

Abstract: Two-dimensional hexagonal boron nitride offers intriguing opportunities for advanced studies of light-matter interaction at the nanoscale, specifically for realizations in quantum nanophotonics. Here, we demonstrate the engineering of optically-addressable spin defects based on the negatively-charged boron vacancy center. We show that these centers can be created in exfoliated hexagonal boron nitr… ▽ More Two-dimensional hexagonal boron nitride offers intriguing opportunities for advanced studies of light-matter interaction at the nanoscale, specifically for realizations in quantum nanophotonics. Here, we demonstrate the engineering of optically-addressable spin defects based on the negatively-charged boron vacancy center. We show that these centers can be created in exfoliated hexagonal boron nitride using a variety of focused ion beams (nitrogen, xenon and argon), with nanoscale precision. Using a combination of laser and resonant microwave excitation, we carry out optically detected magnetic resonance spectroscopy measurements, which reveal a zero-field ground state splitting for the defect of ~3.46 GHz. We also perform photoluminescence excitation spectroscopy and temperature dependent photoluminescence measurements to elucidate the photophysical properties of the center. Our results are important for advanced quantum and nanophotonics realizations involving manipulation and readout of spin defects in hexagonal boron nitride. △ Less

Submitted 16 April, 2020; originally announced April 2020.

Quantum Random Number Generation using a Solid-State Single-Photon Source

Authors: Simon J. U. White, Friederike Klauck, Toan Trong Tran, Nora Schmitt, Mehran Kianinia, Andrea Steinfurth, Matthias Heinrich, Milos Toth, Alexander Szameit, Igor Aharonovich, Alexander Solntsev

Abstract: Quantum random number generation (QRNG) harnesses the intrinsic randomness of quantum mechanical phenomena. Demonstrations of such processes have, however, been limited to probabilistic sources, for instance, spontaneous parametric down-conversion or faint lasers, which cannot be triggered deterministically. Here, we demonstrate QRNG with a quantum emitter in hexagonal boron nitride; an emerging s… ▽ More Quantum random number generation (QRNG) harnesses the intrinsic randomness of quantum mechanical phenomena. Demonstrations of such processes have, however, been limited to probabilistic sources, for instance, spontaneous parametric down-conversion or faint lasers, which cannot be triggered deterministically. Here, we demonstrate QRNG with a quantum emitter in hexagonal boron nitride; an emerging solid-state quantum source that can generate single photons on demand and operates at room temperature. We achieve true random number generation through the measurement of single photons exiting one of four integrated photonic waveguides, and subsequently, verify the randomness of the sequences in accordance with the National Institute of Standards and Technology benchmark suite. Our results open a new avenue to the fabrication of on-chip deterministic random number generators and other solid-state-based quantum-optical devices. △ Less

Submitted 30 January, 2020; v1 submitted 28 January, 2020; originally announced January 2020.

Comments: 5 Pages, 3 Figures

Versatile Direct Writing of Dopants in a Solid State Host Through Recoil Implantation

Authors: Johannes E. Fröch, Alan Bahm, Mehran Kianinia, Mu Zhao, Vijay Bhatia, Sejeong Kim, Julie M. Cairney, Weibo Gao, Carlo Bradac, Igor Aharonovich, Milos Toth

Abstract: Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the realisation of quantum technologies. Yet, the introduction of atomic defects through direct ion implantation remains a fundamental challenge. Herein, we establis… ▽ More Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the realisation of quantum technologies. Yet, the introduction of atomic defects through direct ion implantation remains a fundamental challenge. Herein, we establish a universal method for material doping by exploiting one of the most fundamental principles of physics - momentum transfer. As a proof of concept, we direct-write arrays of emitters into diamond via momentum transfer from a Xe+ focused ion beam (FIB) to thin films of the group IV dopants pre-deposited onto a diamond surface. We conclusively show that the technique, which we term knock-on doping, can yield ultra-shallow dopant profiles localized to the top 5 nm of the target surface, and use it to achieve sub-50 nm lateral resolution. The knock-on doping method is cost-effective, yet very versatile, powerful and universally suitable for applications such as electronic and magnetic doping of atomically thin materials and engineering of near-surface states of semiconductor devices. △ Less

Submitted 8 October, 2020; v1 submitted 20 January, 2020; originally announced January 2020.

Coupling hBN quantum emitters to 1D photonic crystal cavities

Authors: Johannes E. Fröch, Sejeong Kim, Noah Mendelson, Mehran Kianinia, Milos Toth, Igor Aharonovich

Abstract: Quantum photonics technologies require a scalable approach for integration of non-classical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal Boron Nitride (hBN) are amongst the front runners for single photon sources due to their ultra bright emission, however, coupling of hBN defects to photonic crys… ▽ More Quantum photonics technologies require a scalable approach for integration of non-classical light sources with photonic resonators to achieve strong light confinement and enhancement of quantum light emission. Point defects from hexagonal Boron Nitride (hBN) are amongst the front runners for single photon sources due to their ultra bright emission, however, coupling of hBN defects to photonic crystal cavities has so far remained elusive. Here we demonstrate on-chip integration of hBN quantum emitters with photonic crystal cavities from silicon nitride (Si3N4) and achieve experimentally measured Q-factor of 3,300 for hBN/Si3N4 hybrid cavities. We observed 9-fold photoluminescence enhancement of a hBN single photon emission at room temperature. Our work paves the way towards hybrid integrated quantum photonics with hBN, and outlines an excellent path for further development of cavity quantum electrodynamic experiments and on-chip integration of 2D materials. △ Less

Submitted 6 November, 2019; originally announced November 2019.

Near-field energy transfer between a luminescent 2D material and color centers in diamond

Authors: Richard Nelz, Mariusz Radtke, Abdallah Slablab, Mehran Kianinia, Chi Li, Zai-Quan Xu, Carlo Bradac, Igor Aharonovich, Elke Neu

Abstract: Energy transfer between fluorescent probes lies at the heart of many applications ranging from bio-sensing and -imaging to enhanced photo-detection and light harvesting. In this work, we study Förster resonance energy transfer (FRET) between shallow defects in diamond --- nitrogen-vacancy (NV) centers --- and atomically-thin, two-dimensional materials --- tungsten diselenide (WSe$_2$). By means of… ▽ More Energy transfer between fluorescent probes lies at the heart of many applications ranging from bio-sensing and -imaging to enhanced photo-detection and light harvesting. In this work, we study Förster resonance energy transfer (FRET) between shallow defects in diamond --- nitrogen-vacancy (NV) centers --- and atomically-thin, two-dimensional materials --- tungsten diselenide (WSe$_2$). By means of fluorescence lifetime imaging, we demonstrate the occurrence of FRET in the WSe$_2$/NV system. Further, we show that in the coupled system, NV centers provide an additional excitation pathway for WSe$_2$ photoluminescence. Our results constitute the first step towards the realization of hybrid quantum systems involving single-crystal diamond and two-dimensional materials that may lead to new strategies for studying and controlling spin transfer phenomena and spin valley physics. △ Less

Submitted 24 October, 2019; v1 submitted 29 July, 2019; originally announced July 2019.

Comments: v2: accepted for publication in Advanced Quantum Technologies

Integrated on chip platform with quantum emitters in layered materials

Authors: Sejeong Kim, Ngoc My Hanh Duong, Minh Nguyen, Tsung-Ju Lu, Mehran Kianinia, Noah Mendelson, Alexander Solntsev, Carlo Bradac, Dirk R. Englund, Igor Aharonovich

Abstract: Integrated quantum photonic circuitry is an emerging topic that requires efficient coupling of quantum light sources to waveguides and optical resonators. So far, great effort has been devoted to engineering on-chip systems from three-dimensional crystals such as diamond or gallium arsenide. In this study, we demonstrate room temperature coupling of quantum emitters embedded within a layered hexag… ▽ More Integrated quantum photonic circuitry is an emerging topic that requires efficient coupling of quantum light sources to waveguides and optical resonators. So far, great effort has been devoted to engineering on-chip systems from three-dimensional crystals such as diamond or gallium arsenide. In this study, we demonstrate room temperature coupling of quantum emitters embedded within a layered hexagonal boron nitride to an on-chip aluminium nitride waveguide. We achieved 1.2% light coupling efficiency of the device and realise transmission of single photons through the waveguide. Our results serve as a foundation for the integration of layered materials with on-chip components and for the realisation of integrated quantum photonic circuitry. △ Less

Submitted 10 July, 2019; originally announced July 2019.

Room Temperature Initialisation and Readout of Intrinsic Spin Defects in a Van der Waals Crystal

Authors: Andreas Gottscholl, Mehran Kianinia, Victor Soltamov, Carlo Bradac, Christian Kasper, Klaus Krambrock, Andreas Sperlich, Milos Toth, Igor Aharonovich, Vladimir Dyakonov

Abstract: Optically addressable spins in widebandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spindependent processes in atomically thin 2D materials has remained elusive. Although optically accessible spin state… ▽ More Optically addressable spins in widebandgap semiconductors have become one of the most prominent platforms for exploring fundamental quantum phenomena. While several candidates in 3D crystals including diamond and silicon carbide have been extensively studied, the identification of spindependent processes in atomically thin 2D materials has remained elusive. Although optically accessible spin states in hBN are theoretically predicted, they have not yet been observed experimentally. Here, employing rigorous electron paramagnetic resonance techniques and photoluminescence spectroscopy, we identify fluorescence lines in hexagonal boron nitride associated with a particular defect, the negatively charged boron vacancy and determine the parameters of its spin Hamiltonian. We show that the defect has a triplet ground state with a zero field splitting of 3.5 GHz and establish that the centre exhibits optically detected magnetic resonance at room temperature. We also demonstrate the spin polarization of this centre under optical pumping, which leads to optically induced population inversion of the spin ground state a prerequisite for coherent spin manipulation schemes. Our results constitute a leap forward in establishing two dimensional hBN as a prime platform for scalable quantum technologies, with extended potential for spin based quantum information and sensing applications, as our ODMR studies on hBN NV diamonds hybrid structures show. △ Less

Submitted 9 June, 2019; originally announced June 2019.

Journal ref: Nature Materials (2020)

Effects of microstructure and growth conditions on quantum emitters in Gallium Nitride

Authors: Minh Nguyen, Tongtong Zhu, Mehran Kianinia, Fabien Massabuau, Igor Aharonovich, Milos Toth, Rachel Oliver, Carlo Bradac

Abstract: Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host material, as well as its remarkable chemical stability and optoelectronic properties. We investigate the nature of such single-photon emitters in GaN with a systematic analysis of various samples produced under differen… ▽ More Single-photon emitters in gallium nitride (GaN) are gaining interest as attractive quantum systems due to the well-established techniques for growth and nanofabrication of the host material, as well as its remarkable chemical stability and optoelectronic properties. We investigate the nature of such single-photon emitters in GaN with a systematic analysis of various samples produced under different growth conditions. We explore the effect that intrinsic structural defects (dislocations and stacking faults), doping and crystal orientation in GaN have on the formation of quantum emitters. We investigate the relationship between the position of the emitters (determined via spectroscopy and photoluminescence measurements) and the location of threading dislocations (characterised both via atomic force microscopy and cathodoluminescence). We find that quantum emitters do not correlate with stacking faults or dislocations; instead, they are more likely to originate from point defects or impurities whose density is modulated by the local extended defect density. △ Less

Submitted 28 November, 2018; originally announced November 2018.

Electron Paramagnetic Resonance signature of point defects in neutron irradiated hexagonal Boron Nitride

Authors: J. R. Toledo, D. B. de Jesus, M. Kianinia, A. S. Leal, C. Fantini, L. A. Cury, G. M. Sáfar, I. Aharonovich, K. Krambrock

Abstract: Hexagonal boron nitride (h-BN) is an attractive van der Waals material for studying fluorescent defects due to its large bandgap. In this work, we demonstrate enhanced pink color due to neutron irradiation and perform electron paramagnetic resonance (EPR) measurements. The new point defects are tentatively assigned to doubly- occupied nitrogen vacancies with (S = 1) and a zero-field splitting (D =… ▽ More Hexagonal boron nitride (h-BN) is an attractive van der Waals material for studying fluorescent defects due to its large bandgap. In this work, we demonstrate enhanced pink color due to neutron irradiation and perform electron paramagnetic resonance (EPR) measurements. The new point defects are tentatively assigned to doubly- occupied nitrogen vacancies with (S = 1) and a zero-field splitting (D = 1.2 GHz). These defects are associated with a broad visible optical absorption band and near infrared photoluminescence band centered at ~ 490 nm and 820 nm, respectively. The EPR signal intensities are strongly affected by thermal treatments in temperature range between 600 to 800°C, where also the irradiation - induced pink color is lost. Our results are important for understanding of point defects in h-BN and their deployment for quantum and integrated photonic applications. △ Less

Submitted 8 October, 2018; v1 submitted 14 July, 2018; originally announced July 2018.

Journal ref: Phys. Rev. B 98, 155203 (2018)

Enhanced Emission from WSe2 Monolayers Coupled to Circular Bragg Gratings

Authors: Ngoc My Hanh Duong, Zai-Quan Xu, Mehran Kianinia, Rongbin Su, Zhuojun Liu, Sejeong Kim, Carlo Bradac, Lain-Jong Li, Alexander Solntsev, Jin Liu, Igor Aharonovich

Abstract: Two-dimensional transition-metal dichalcogenides (TMDC) are of great interest for on-chip nanophotonics due to their unique optoelectronic properties. Here, we propose and realize coupling of tungsten diselenide (WSe2) monolayers to circular Bragg grating structures to achieve enhanced emission. The interaction between WSe2 and the resonant mode of the structure results in Purcell-enhanced emissio… ▽ More Two-dimensional transition-metal dichalcogenides (TMDC) are of great interest for on-chip nanophotonics due to their unique optoelectronic properties. Here, we propose and realize coupling of tungsten diselenide (WSe2) monolayers to circular Bragg grating structures to achieve enhanced emission. The interaction between WSe2 and the resonant mode of the structure results in Purcell-enhanced emission, while the symmetric geometrical structure improves the directionality of the out-coupling stream of emitted photons. Furthermore, this hybrid structure produces a record high contrast of the spin valley readout (> 40%) revealed by the polarization resolved photoluminescence (PL) measurements. Our results are promising for on-chip integration of TMDC monolayers with optical resonators for nanophotonic circuits. △ Less

Submitted 18 June, 2018; originally announced June 2018.

Bottom up engineering of near-identical quantum emitters in atomically thin materials

Authors: Noah Mendelson, Zai-Quan Xu, Toan Trong Tran, Mehran Kianinia, Carlo Bradac, John Scott, Minh Nguyen, James Bishop, Johannes Froch, Blake Regan, Igor Aharonovich, Milos Toth

Abstract: Quantum technologies require robust and photostable single photon emitters (SPEs) that can be reliably engineered. Hexagonal boron nitride (hBN) has recently emerged as a promising candidate host to bright and optically stable SPEs operating at room temperature. However, the emission wavelength of the fluorescent defects in hBN has, to date, been shown to be uncontrolled. The emitters usually disp… ▽ More Quantum technologies require robust and photostable single photon emitters (SPEs) that can be reliably engineered. Hexagonal boron nitride (hBN) has recently emerged as a promising candidate host to bright and optically stable SPEs operating at room temperature. However, the emission wavelength of the fluorescent defects in hBN has, to date, been shown to be uncontrolled. The emitters usually display a large spread of zero phonon line (ZPL) energies spanning over a broad spectral range (hundreds of nanometers), which hinders the potential development of hBN-based devices and applications. We demonstrate bottom-up, chemical vapor deposition growth of large-area, few layer hBN that hosts large quantities of SPEs: 100 per 10x10 μm2. Remarkably, more than 85 percent of the emitters have a ZPL at (580{\pm}10)nm, a distribution which is over an order of magnitude narrower than previously reported. Exploiting the high density and uniformity of the emitters, we demonstrate electrical modulation and tuning of the ZPL emission wavelength by up to 15 nm. Our results constitute a definite advancement towards the practical deployment of hBN single photon emitters in scalable quantum photonic and hybrid optoelectronic devices based on 2D materials. △ Less

Submitted 4 June, 2018; originally announced June 2018.

Effects of high energy electron irradiation on quantum emitters in hexagonal boron nitride

Authors: Hanh Ngoc My Duong, Minh Anh Phan Nguyen, Mehran Kianinia, Hiroshi Abe, Takeshi Ohshima, Kenji Watanabe, Takashi Taniguchi, James H. Edgar, Igor Aharonovich, Milos Toth

Abstract: Hexagonal Boron Nitride (hBN) mono and multilayers are promising hosts for room temperature single photon emitters (SPEs). In this work we explore high energy (~ MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes - namely, high purity multilayers, isotopically pure hBN, carbon rich hBN multilayers and monolayered material - and f… ▽ More Hexagonal Boron Nitride (hBN) mono and multilayers are promising hosts for room temperature single photon emitters (SPEs). In this work we explore high energy (~ MeV) electron irradiation as a means to generate stable SPEs in hBN. We investigate four types of exfoliated hBN flakes - namely, high purity multilayers, isotopically pure hBN, carbon rich hBN multilayers and monolayered material - and find that electron irradiation increases emitter concentrations dramatically in all samples. Furthermore, the engineered emitters are located throughout hBN flakes (not only at flake edges or grain boundaries), and do not require activation by high temperature annealing of the host material after electron exposure. Our results provide important insights into controlled formation of hBN SPEs and may aid in identification of their crystallographic origin. △ Less

Submitted 10 May, 2018; originally announced May 2018.

Single crystal diamond membranes containing germanium vacancy color centers

Authors: Kerem Bray, Blake Regan, Aleksandra Trycz, Rodolfo Previdi, Gediminas Seniutinas, Kumaravelu Ganesan, Mehran Kianinia, Sejeong Kim, Igor Aharonovich

Abstract: Single crystal diamond membranes that host optically active emitters are highly attractive components for integrated quantum nanophotonics. In this work we demonstrate bottom-up synthesis of single crystal diamond membranes containing the germanium vacancy (GeV) color centers. We employ a lift-off technique to generate the membranes and perform chemical vapour deposition in a presence of germanium… ▽ More Single crystal diamond membranes that host optically active emitters are highly attractive components for integrated quantum nanophotonics. In this work we demonstrate bottom-up synthesis of single crystal diamond membranes containing the germanium vacancy (GeV) color centers. We employ a lift-off technique to generate the membranes and perform chemical vapour deposition in a presence of germanium oxide to realize the insitu doping. Finally, we show that these membranes are suitable for engineering of photonic resonators such as microring cavities with quality factors of 1500. The robust and scalable approach to engineer single crystal diamond membranes containing emerging color centers is a promising pathway for realization of diamond integrated quantum nanophotonic circuits on a chip. △ Less

Submitted 6 April, 2018; originally announced April 2018.

Single Photon Emission from Plasma Treated 2D Hexagonal Boron Nitride

Authors: Zai-Quan Xu, Christopher Elbadawi, Toan Trong Tran, Mehran Kianinia, Xiuling Li, Daobin Liu, Timothy B. Hoffman, Minh Nguyen, Sejeong Kim, James H. Edgar, Xiaojun Wu, Li Song, Sajid Ali, Mike Ford, Milos Toth, Igor Aharonovich

Abstract: Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Yet, synthesis of color centers that act as single photon emitters which are suitable for on-chip applications is still beyond reach. Here, we report a number of plasma and thermal annealing methods for the fabrication of emitters in… ▽ More Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Yet, synthesis of color centers that act as single photon emitters which are suitable for on-chip applications is still beyond reach. Here, we report a number of plasma and thermal annealing methods for the fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprised of Ar plasma etching and subsequent annealing in Ar is highly robust, and yields a seven-fold increase in the concentration of emitters in hBN. The initial plasma etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature and have an emission energy distribution that is red-shifted relative to that of pristine hBN. An analysis of emitters fabricated by a range of plasma and annealing treatments, combined with a theoretical investigation of point defects in hBN indicates that single photon emitters characterized by a high degree of photostability and emission wavelengths greater than ~700 nm are associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters by annealing hBN in an oxidative atmosphere. Our findings advance present understanding of the structure of quantum emitter in hBN and enhance the nanofabrication toolkit that is needed to realize integrated quantum nanophotonics based on 2D materials. △ Less

Submitted 19 October, 2017; originally announced October 2017.

Nanoassembly of quantum emitters in hexagonal boron nitride and gold nanospheres

Authors: Minh Nguyen, Sejeong Kim, Toan Trong Tran, Zai-Quan Xu, Mehran Kianinia, Milos Toth, Igor Aharonovich

Abstract: Assembly of quantum nanophotonic systems with plasmonic resonators are important for fundamental studies of single photon sources as well as for on-chip information processing. In this work, we demonstrate controllable nanoassembly of gold nanospheres with ultra-bright quantum emitters in 2D layered hexagonal boron nitride (hBN). We utilize an atomic force microscope (AFM) tip to precisely positio… ▽ More Assembly of quantum nanophotonic systems with plasmonic resonators are important for fundamental studies of single photon sources as well as for on-chip information processing. In this work, we demonstrate controllable nanoassembly of gold nanospheres with ultra-bright quantum emitters in 2D layered hexagonal boron nitride (hBN). We utilize an atomic force microscope (AFM) tip to precisely position gold nanospheres to close proximity of the quantum emitters and observe the resulting emission enhancement and fluorescence lifetime reduction. A fluorescence enhancement of over 300% is achieved experimentally for quantum emitters in hBN, with a radiative quantum efficiency of up to 40% and a saturated count rate in excess of 5 million counts/s. Our results are promising for future employment of quantum emitters in hBN for integrated nanophotonic devices and plasmonic based nanosensors. △ Less

Submitted 17 October, 2017; originally announced October 2017.

Super-resolution imaging of quantum emitters in layered materials

Authors: Mehran Kianinia, Carlo Bradac, Fan Wang, Bernd Sontheimer, Toan Trong Tran, Minh Nguyen, Sejeong Kim, Zai-Quan Xu, Dayong Jin, Andreas W. Schell, Charlene J. Lobo, Igor Aharonovich, Milos Toth

Abstract: Layered van der Waals materials are emerging as compelling two-dimensional (2D) platforms for studies of nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and quantum information processing. Amongst these, hexagonal boron nitride (hBN) is unique in that it hosts ultra-bright, room temperature single photon emitters (SPE… ▽ More Layered van der Waals materials are emerging as compelling two-dimensional (2D) platforms for studies of nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and quantum information processing. Amongst these, hexagonal boron nitride (hBN) is unique in that it hosts ultra-bright, room temperature single photon emitters (SPEs). However, an outstanding challenge is to locate SPEs in hBN with high precision, a task which requires breaking the optical diffraction limit. Here, we report the imaging of SPEs in layered hBN with a spatial resolution of 63 nm using ground state depletion (GSD) nanoscopy. Furthermore, we show that SPEs in hBN possess nonlinear photophysical properties which can be used to realize a new variant of GSD that employs a coincident pair of doughnut-shaped lasers to reduce the laser power that is needed to achieve a given resolution target. Our findings expand the current understanding of the photophysics of quantum emitters in layered hBN and demonstrate the potential for advanced nanophotonic and bio-imaging applications which require localization of individual emitters with super-resolution accuracy. △ Less

Submitted 21 September, 2017; originally announced September 2017.

Resonant Excitation of Quantum Emitters in Hexagonal Boron Nitride

Authors: Toan Trong Tran, Mehran Kianinia, Minh Nguyen, Sejeong Kim, Zai-Quan Xu, Alexander Kubanek, Milos Toth, Igor Aharonovich

Abstract: Quantum emitters in layered hexagonal boron nitride (hBN) have recently attracted a great attention as promising single photon sources. In this work, we demonstrate resonant excitation of a single defect center in hBN, one of the most important prerequisites for employment of optical sources in quantum information application. We observe spectral linewidths of hBN emitter narrower than 1 GHz while… ▽ More Quantum emitters in layered hexagonal boron nitride (hBN) have recently attracted a great attention as promising single photon sources. In this work, we demonstrate resonant excitation of a single defect center in hBN, one of the most important prerequisites for employment of optical sources in quantum information application. We observe spectral linewidths of hBN emitter narrower than 1 GHz while the emitter experiences spectral diffusion. Temporal photoluminescence measurements reveals an average spectral diffusion time of around 100 ms. On-resonance photon antibunching measurement is also realized. Our results shed light on the potential use of quantum emitters from hBN in nanophotonics and quantum information. △ Less

Submitted 29 August, 2017; originally announced August 2017.

Nanodiamonds with photostable, sub-gigahertz linewidths quantum emitters

Authors: Toan Trong Tran, Mehran Kianinia, Kerem Bray, Sejeong Kim, Zai-Quan Xu, Angus Gentle, Bernd Sontheimer, Carlo Bradac, Igor Aharonovich

Abstract: Single photon emitters with narrow linewidths are highly sought after for applications in quantum information processing and quantum communications. In this letter, we report on a bright, highly polarized near infrared single photon emitter embedded in diamond nanocrystals with a narrow, sub GHz optical linewidths at 10K. The observed zero phonon line at ~ 780 nm is optically stable under low powe… ▽ More Single photon emitters with narrow linewidths are highly sought after for applications in quantum information processing and quantum communications. In this letter, we report on a bright, highly polarized near infrared single photon emitter embedded in diamond nanocrystals with a narrow, sub GHz optical linewidths at 10K. The observed zero phonon line at ~ 780 nm is optically stable under low power resonant excitation and blue shifts as the excitation power increases. Our results highlight the prospect for using new near infrared color centers in nanodiamonds for quantum applications. △ Less

Submitted 12 June, 2017; v1 submitted 18 May, 2017; originally announced May 2017.

First principles investigation of quantum emission from hBN defects

Authors: Sherif Abdulkader Tawfik, Sajid Ali, Marco Fronzi, Mehran Kianinia, Toan Trong Tran, Catherine Stampfl, Igor Aharonovich, Milos Toth, Michael J. Ford

Abstract: Hexagonal boron nitride (hBN) has recently emerged as a fascinating platform for room-temperature quantum photonics due to the discovery of robust visible light single-photon emitters. In order to utilize these emitters, it is necessary to have a clear understanding of their atomic structure and the associated excitation processes that give rise to this single photon emission. Here we perform dens… ▽ More Hexagonal boron nitride (hBN) has recently emerged as a fascinating platform for room-temperature quantum photonics due to the discovery of robust visible light single-photon emitters. In order to utilize these emitters, it is necessary to have a clear understanding of their atomic structure and the associated excitation processes that give rise to this single photon emission. Here we perform density-functional theory (DFT) and constrained DFT calculations for a range of hBN point defects in order to identify potential emission candidates. By applying a number of criteria on the electronic structure of the ground state and the atomic structure of the excited states of the considered defects, and then calculating the Huang-Rhys (HR) factor, we find that the CBVN defect, in which a carbon atom substitutes a boron atom and the opposite nitrogen atom is removed, is a potential emission source with a HR factor of 1.66, in good agreement with the experimental HR factor. We calculate the photoluminescence (PL) line shape for this defect and find that it reproduces a number of key features in the the experimental PL lineshape. △ Less

Submitted 13 June, 2017; v1 submitted 16 May, 2017; originally announced May 2017.

Atomic Engineering of Single Photon Sources in 2D Boron Nitride Zai-Quan

Authors: Zai-Quan Xu, Christopher Elbadawi, Toan Trong Tran, Mehran Kianinia, Timothy B. Hoffman, James H. Edgar, Milos Toth, Igor Aharonovich

Abstract: Artificial atomic systems in solids such as single photon emitters are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Here, we report on a controllable way to engineer emitters in two-dimensional (2D) hexagonal boron nitride (hBN) crystals using plasma processing. The method is robust, and yields a 7-fold increase in th… ▽ More Artificial atomic systems in solids such as single photon emitters are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Here, we report on a controllable way to engineer emitters in two-dimensional (2D) hexagonal boron nitride (hBN) crystals using plasma processing. The method is robust, and yields a 7-fold increase in the density of emitters in hBN, which is promising for their deployment in practical devices. While as-fabricated emitters suffer from blinking and bleaching, a subsequent annealing step yields photo-stable emitters. The presented process is the first step towards controllable placement of quantum emitters in hBN for integrated on-chip quantum nanophotonics based on 2D materials. △ Less

Submitted 8 May, 2017; v1 submitted 17 April, 2017; originally announced April 2017.

Comments: manuscript will be updated later