Showing 1–2 of 2 results for author: Kohara, T
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Frustration-induced valence bond crystal and its melting in Mo3Sb7
Authors:
T. Koyama,
H. Yamashita,
Y. Takahashi,
T. Kohara,
I. Watanabe,
Y. Tabata,
H. Nakamura
Abstract:
121/123Sb nuclear quadrupole resonance and muon spin relaxation experiments of Mo3Sb7 revealed symmetry breakdown to a nonmagnetic state below the transition recently found at TS=50 K. The transition is characterized by a distinct lattice dynamics suggested from narrowing of nuclear fields. We point out that the Mo sublatice is a unique three-dimensional frustrated lattice where nearest-neighbor…
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121/123Sb nuclear quadrupole resonance and muon spin relaxation experiments of Mo3Sb7 revealed symmetry breakdown to a nonmagnetic state below the transition recently found at TS=50 K. The transition is characterized by a distinct lattice dynamics suggested from narrowing of nuclear fields. We point out that the Mo sublatice is a unique three-dimensional frustrated lattice where nearest-neighbor and next-nearest-neighbor antiferromagnetic interactions compete, and propose that tetragonal distortion to release the frustration stabilizes long-range order of spin-singlet dimers, i.e., valence bond crystal, which is thermally excited to the dynamic state with cubic symmetry.
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Submitted 26 May, 2008;
originally announced May 2008.
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NMR study of electronic state in CePt3Si
Authors:
K. Ueda,
K. Hamamoto,
T. Kohara,
G. Motoyama,
Y. Oda
Abstract:
In this article, we report the temperature dependence of spin-lattice relaxation rates at two Pt sites and one Si site in CePt3Si with a non-centrosymmetric structure center. 1/T1 for both Pt sites between 2 K and 300 K and 1/T1 of Si above 3 K might be explained by the contributions from the low-lying crystal-electric-field level and the quasiparticle due to the hybridization between the ground…
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In this article, we report the temperature dependence of spin-lattice relaxation rates at two Pt sites and one Si site in CePt3Si with a non-centrosymmetric structure center. 1/T1 for both Pt sites between 2 K and 300 K and 1/T1 of Si above 3 K might be explained by the contributions from the low-lying crystal-electric-field level and the quasiparticle due to the hybridization between the ground state and conduction electrons. Just below Tc no remarkable enhancement in 1/T1 was observed. The estimated value of superconducting gap is about 2Delta = 3kBTc.
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Submitted 24 September, 2004;
originally announced September 2004.
