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Raman spectra of amino acids and peptides from machine learning polarizabilities
Authors:
Ethan Berger,
Juha Niemelä,
Outi Lampela,
André H. Juffer,
Hannu-Pekka Komsa
Abstract:
Raman spectroscopy is an important tool in the study of vibrational properties and composition of molecules, peptides and even proteins. Raman spectra can be simulated based on the change of the electronic polarizability with vibrations, which can nowadays be efficiently obtained via machine learning models trained on first-principles data. However, the transferability of the models trained on sma…
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Raman spectroscopy is an important tool in the study of vibrational properties and composition of molecules, peptides and even proteins. Raman spectra can be simulated based on the change of the electronic polarizability with vibrations, which can nowadays be efficiently obtained via machine learning models trained on first-principles data. However, the transferability of the models trained on small molecules to larger structures is unclear and direct training on large structures in prohibitively expensive. In this work, we first train two machine learning models to predict polarizabilities of all 20 amino acids. Both models are carefully benchmarked and compared to DFT calculations, with neural network method found to offer better transferability. By combining machine learning models with classical force field molecular dynamics, Raman spectra of all amino acids are also obtained and investigated, showing good agreement with experiments. The models are further extended to small peptides. We find that adding structures containing peptide bonds to the training set greatly improves predictions even for peptides not included in training sets.
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Submitted 29 April, 2024; v1 submitted 26 January, 2024;
originally announced January 2024.
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Tip-induced creation and Jahn-Teller distortions of sulfur vacancies in single-layer MoS$_{2}$
Authors:
Daniel Jansen,
Tfyeche Tounsi,
Jeison Fischer,
Arkady V. Krasheninnikov,
Thomas Michely,
Hannu-Pekka Komsa,
Wouter Jolie
Abstract:
We present an atomically precise technique to create sulfur vacancies and control their atomic configurations in single-layer MoS$_{2}$. It involves adsorbed Fe atoms and the tip of a scanning tunneling microscope, which enables single sulfur removal from the top sulfur layer at the initial position of Fe. Using scanning tunneling spectroscopy, we show that the STM tip can also induce two Jahn-Tel…
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We present an atomically precise technique to create sulfur vacancies and control their atomic configurations in single-layer MoS$_{2}$. It involves adsorbed Fe atoms and the tip of a scanning tunneling microscope, which enables single sulfur removal from the top sulfur layer at the initial position of Fe. Using scanning tunneling spectroscopy, we show that the STM tip can also induce two Jahn-Teller distorted states with reduced orbital symmetry in the sulfur vacancies. Density functional theory calculations rationalize our experimental results. Additionally, we provide evidence for molecule-like hybrid orbitals in artificially created sulfur vacancy dimers, which illustrates the potential of our technique for the development of extended defect lattices and tailored electronic band structures.
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Submitted 26 March, 2024; v1 submitted 18 January, 2024;
originally announced January 2024.
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Polarizability Models for Simulations of Finite Temperature Raman Spectra from Machine Learning Molecular Dynamics
Authors:
Ethan Berger,
Hannu-Pekka Komsa
Abstract:
Raman spectroscopy is a powerful and nondestructive method that is widely used to study the vibrational properties of solids or molecules. Simulations of finite-temperature Raman spectra rely on obtaining polarizabilities along molecular dynamics trajectories, which is computationally highly demanding if calculated from first principles. Machine learning force fields (MLFF) are becoming widely use…
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Raman spectroscopy is a powerful and nondestructive method that is widely used to study the vibrational properties of solids or molecules. Simulations of finite-temperature Raman spectra rely on obtaining polarizabilities along molecular dynamics trajectories, which is computationally highly demanding if calculated from first principles. Machine learning force fields (MLFF) are becoming widely used for accelerating molecular dynamics simulations, but machine-learning models for polarizability are still rare. In this work, we present and compare three polarizability models for obtaining Raman spectra in conjunction with MLFF molecular dynamics trajectories: (i) model based on projection to primitive cell eigenmodes, (ii) bond polarizability model, and (iii) symmetry-adapted Gaussian process regression (SA-GPR) using smooth overlap of atomic positions. In particular, we investigate the accuracy of these models for different systems and how much training data is required. Models are first applied to boron arsenide, where the first- and second-order Raman spectra are studied as well as the effect of boron isotopes. With MoS$_2$ we study the applicability of the models for highly anisotropic systems and for simulating resonant Raman spectra. Finally, inorganic halide perovskites CsPbBr$_3$ and CsSnBr$_3$ are studied with a particular interest in simulating the spectra across phase transitions and the evolution of the central peak. All models can be used to efficiently predict polarizabilities and are applicable to large systems and long simulation times, and while all three models were found to perform similarly for BAs and MoS$_2$, only SA-GPR offers sufficient flexibility to accurately describe complex anharmonic materials like the perovskites.
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Submitted 20 October, 2023;
originally announced October 2023.
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Controlled defect production in monolayer MoS2 via electron irradiation at ultralow accelerating voltages
Authors:
Ajit Kumar Dash,
Hariharan Swaminathan,
Ethan Berger,
Mainak Mondal,
Touko Lehenkari,
Pushp Raj Prasad,
Kenji Watanabe,
Takashi Taniguchi,
Hannu-Pekka Komsa,
Akshay Singh
Abstract:
Control on spatial location and density of defects in 2D materials can be achieved using electron beam irradiation. Conversely, ultralow accelerating voltages (less than or equal to 5kV) are used to measure surface morphology, with no expected defect creation. We find clear signatures of defect creation in monolayer (ML) MoS2 at these voltages. Evolution of E' and A1' Raman modes with electron dos…
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Control on spatial location and density of defects in 2D materials can be achieved using electron beam irradiation. Conversely, ultralow accelerating voltages (less than or equal to 5kV) are used to measure surface morphology, with no expected defect creation. We find clear signatures of defect creation in monolayer (ML) MoS2 at these voltages. Evolution of E' and A1' Raman modes with electron dose, and appearance of defect activated peaks indicate defect formation. To simulate Raman spectra of MoS2 at realistic defect distributions, while retaining density-functional theory accuracy, we combine machine-learning force fields for phonons and eigenmode projection approach for Raman tensors. Simulated spectra agree with experiments, with sulphur vacancies as suggested defects. We decouple defects, doping and carbonaceous contamination using control (hBN covered and encapsulated MoS2) samples. We observe cryogenic PL quenching and defect peaks, and find that carbonaceous contamination does not affect defect creation. These studies have applications in photonics and quantum emitters.
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Submitted 28 March, 2023; v1 submitted 10 October, 2022;
originally announced October 2022.
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High-throughput computation of Raman spectra from first principles
Authors:
Mohammad Bagheri,
Hannu-Pekka Komsa
Abstract:
Raman spectroscopy is a widely-used non-destructive material characterization method, which provides information about the vibrational modes of the material and therefore of its atomic structure and chemical composition. Interpretation of the spectra requires comparison to known references and to this end, experimental databases of spectra have been collected. Reference Raman spectra could also be…
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Raman spectroscopy is a widely-used non-destructive material characterization method, which provides information about the vibrational modes of the material and therefore of its atomic structure and chemical composition. Interpretation of the spectra requires comparison to known references and to this end, experimental databases of spectra have been collected. Reference Raman spectra could also be simulated using atomistic first-principles methods but these are computationally demanding and thus the existing databases of computational Raman spectra are fairly small. In this work, we developed an optimized workflow to calculate the Raman spectra more efficiently compared to existing approaches. The workflow was benchmarked and validated by comparison to experiments and previous computational methods for select technologically relevant material systems. Using the workflow, we performed high-throughput calculations for a large set of materials (5099) belonging to many different material classes, and collected the results to a database. Finally, the contents of database are analyzed and the calculated spectra are shown to agree well with the experimental ones.
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Submitted 29 September, 2022;
originally announced September 2022.
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Raman Spectra of Titanium Carbide MXene from Machine-Learning Force Field Molecular Dynamics
Authors:
Ethan Berger,
Zhong-Peng Lv,
Hannu-Pekka Komsa
Abstract:
MXenes represent one of the largest class of 2D materials with promising applications in many fields and their properties tunable by the surface group composition. Raman spectroscopy is expected to yield rich information about the surface composition, but the interpretation of measured spectra has proven challenging. The interpretation is usually done via comparison to simulated spectra, but there…
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MXenes represent one of the largest class of 2D materials with promising applications in many fields and their properties tunable by the surface group composition. Raman spectroscopy is expected to yield rich information about the surface composition, but the interpretation of measured spectra has proven challenging. The interpretation is usually done via comparison to simulated spectra, but there are large discrepancies between the experimental and earlier simulated spectra. In this work, we develop a computational approach to simulate Raman spectra of complex materials that combines machine-learning force-field molecular dynamics and reconstruction of Raman tensors via projection to pristine system modes. The approach can account for the effects of finite temperature, mixed surfaces, and disorder. We apply our approach to simulate Raman spectra of titanium carbide MXene and show that all these effects must be included in order to properly reproduce the experimental spectra, in particular the broad features. We discuss the origin of the peaks and how they evolve with surface composition, which can then be used to interpret experimental results.
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Submitted 30 September, 2022;
originally announced September 2022.
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Screening 0D materials for 2D nanoelectronics applications
Authors:
Mohammad Bagheri,
Hannu-Pekka Komsa
Abstract:
As nanoelectronic devices based on two-dimensional (2D) materials are moving towards maturity, optimization of the properties of the active 2D material must be accompanied by equal attention to optimizing the properties of and the interfaces to the other materials around it, such as electrodes, gate dielectrics, and the substrate. While these are usually either 2D or 3D materials, recently K. Liu…
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As nanoelectronic devices based on two-dimensional (2D) materials are moving towards maturity, optimization of the properties of the active 2D material must be accompanied by equal attention to optimizing the properties of and the interfaces to the other materials around it, such as electrodes, gate dielectrics, and the substrate. While these are usually either 2D or 3D materials, recently K. Liu et al. [Nat. Electron. 4, 906 (2021)] reported on the use of zero-dimensional (0D) material, consisting of vdW-bonded Sb$_2$O$_3$ clusters, as a highly promising insulating substrate and gate dielectric. Here, we report on computational screening study to find promising 0D materials for use in nanoelectronics applications, in conjunction with 2D materials in particular. By combining a database and literature searches, we found 16 materials belonging to 6 structural prototypes with high melting points and high band gaps, and a range of static dielectric constants. We carried out additional first-principles calculations to evaluate selected technologically relevant material properties, and confirmed that all these materials are van der Waals-bonded, thus allowing for facile separation of 0D clusters from the 3D host and also weakly perturbing the electronic properties of the 2D material after deposition.
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Submitted 15 July, 2022;
originally announced July 2022.
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Metal-insulator transition in monolayer MoS$_2$ via contactless chemical doping
Authors:
Camiel van Efferen,
Clifford Murray,
Jeison Fischer,
Carsten Busse,
Hannu-Pekka Komsa,
Thomas Michely,
Wouter Jolie
Abstract:
Much effort has been made to modify the properties of transition metal dichalcogenide layers via their environment as a route to new functionalization. However, it remains a challenge to induce large electronic changes without chemically altering the layer or compromising its two-dimensionality. Here, a non-invasive technique is used to shift the chemical potential of monolayer MoS$_2$ through p-…
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Much effort has been made to modify the properties of transition metal dichalcogenide layers via their environment as a route to new functionalization. However, it remains a challenge to induce large electronic changes without chemically altering the layer or compromising its two-dimensionality. Here, a non-invasive technique is used to shift the chemical potential of monolayer MoS$_2$ through p- and n-type doping of graphene (Gr), which remains a well-decoupled 2D substrate. With the intercalation of oxygen (O) under Gr, a nearly rigid Fermi level shift of 0.45 eV in MoS$_2$ is demonstrated, whereas the intercalation of europium (Eu) induces a metal-insulator transition in MoS$_2$, accompanied by a giant band gap reduction of 0.67 eV. Additionally, the effect of the substrate charge on 1D states within MoS$_2$ mirror-twin boundaries (MTBs) is explored. It is found that the 1D nature of the MTB states is not compromised, even when MoS$_2$ is made metallic. Furthermore, with the periodicity of the 1D states dependent on substrate-induced charging and depletion, the boundaries serve as chemical potential sensors functional up to room temperature.
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Submitted 9 December, 2021;
originally announced December 2021.
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Fermiology of two-dimensional titanium carbide and nitride MXenes
Authors:
Mohammad Bagheri,
Rina Ibragimova,
Hannu-Pekka Komsa
Abstract:
MXenes are a family two-dimensional transition metal carbide and nitride materials, which often exhibit very good metallic conductivity and are thus of great interest for applications in, e.g., flexible electronics, electrocatalysis, and electromagnetic interference shielding. However, surprisingly little is known about the fermiology of MXenes, i.e, the shape and size of their Fermi-surfaces, and…
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MXenes are a family two-dimensional transition metal carbide and nitride materials, which often exhibit very good metallic conductivity and are thus of great interest for applications in, e.g., flexible electronics, electrocatalysis, and electromagnetic interference shielding. However, surprisingly little is known about the fermiology of MXenes, i.e, the shape and size of their Fermi-surfaces, and its effect on the material properties. One reason for this may be that MXene surfaces are almost always covered by a mixture of functional groups, and studying Fermi-surfaces of disordered systems is cumbersome. Here, we study fermiology of four common Ti-based MXenes as a function of the surface functional group composition. We first calculate the effective band structures of systems with explicit mixed surfaces and observe gradual evolution in the filling of the Ti-d band and resulting shift of Fermi-level. We then demonstrate that these band structures can be closely approximated by using pseudohydrogenated surfaces, and also compare favorably to the experimental angle-resolved photoemission spectroscopy results. By modifying the pseudohydrogen charge we then proceed to plot Fermi-surfaces for all systems and extract their properties, such as the Fermi-surface area and average Fermi-velocity. These are in turn used to evaluate the electrical conductivity with the relaxation time fitted to experimentally measured conductivities.
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Submitted 21 April, 2021;
originally announced April 2021.
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Photoluminescence Lineshapes for Color Centers in Silicon Carbide from Density Functional Theory Calculations
Authors:
Arsalan Hashemi,
Christopher Linderalv,
Arkady V. Krasheninnikov,
Tapio Ala-Nissila,
Paul Erhart,
Hannu-Pekka Komsa
Abstract:
Silicon carbide with optically and magnetically active point defects offers unique opportunities for quantum technology applications. Since interaction with these defects commonly happens through optical excitation and de-excitation, a complete understanding of their light-matter interaction in general and optical signatures, in particular, is crucial. Here, we employ quantum mechanical density fu…
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Silicon carbide with optically and magnetically active point defects offers unique opportunities for quantum technology applications. Since interaction with these defects commonly happens through optical excitation and de-excitation, a complete understanding of their light-matter interaction in general and optical signatures, in particular, is crucial. Here, we employ quantum mechanical density functional theory calculations to investigate the photoluminescence lineshapes of selected, experimentally observed color centers (including single vacancies, double vacancies, and vacancy impurity pairs) in 4H-SiC. The analysis of zero-phonon lines as well as Huang-Rhys and Debye-Waller factors are accompanied by a detailed study of the underlying lattice vibrations. We show that the defect lineshapes are governed by strong coupling to bulk phonons at lower energies and localized vibrational modes at higher energies. Generally, good agreement to the available experimental data is obtained, and thus we expect our theoretical work to be beneficial for the identification of defect signatures in the photoluminescence spectra and thereby advance the research in quantum photonics and quantum information processing.
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Submitted 4 October, 2020;
originally announced October 2020.
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Band Bending and Valence Band Quantization at Line Defects in MoS$_2$
Authors:
Clifford Murray,
Camiel van Efferen,
Wouter Jolie,
Jeison Antonio Fischer,
Joshua Hall,
Achim Rosch,
Arkady V. Krasheninnikov,
Hannu-Pekka Komsa,
Thomas Michely
Abstract:
The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS$_2$, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at $5$K. Strong upwards bending of valence and conduction bands towards the line defects is found for the 4|4E mirror twin boundary and island edges, but not for the 4|4P mirror twin boundary. Quantize…
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The variation of the electronic structure normal to 1D defects in quasi-freestanding MoS$_2$, grown by molecular beam epitaxy, is investigated through high resolution scanning tunneling spectroscopy at $5$K. Strong upwards bending of valence and conduction bands towards the line defects is found for the 4|4E mirror twin boundary and island edges, but not for the 4|4P mirror twin boundary. Quantized energy levels in the valence band are observed wherever upwards band bending takes place. Focusing on the common 4|4E mirror twin boundary, density functional theory calculations give an estimate of its charging, which agrees well with electrostatic modeling. We show that the line charge can also be assessed from the filling of the boundary-localized electronic band, whereby we provide a measurement of the theoretically predicted quantized polarization charge at MoS$_2$ mirror twin boundaries. These calculations elucidate the origin of band bending and charging at these 1D defects in MoS$_2$. The 4|4E mirror twin boundary not only impairs charge transport of electrons and holes due to band bending, but holes are additionally subject to a potential barrier, which is inferred from the independence of the quantized energy landscape on either side of the boundary.
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Submitted 13 July, 2020;
originally announced July 2020.
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First principles study of stability of MXenes under electron beam
Authors:
Rina Ibragimova,
Zhong-Peng Lv,
Hannu-Pekka Komsa
Abstract:
Interactions of two-dimensional MXene sheets and electron beam of (scanning) transmission electron microscope are studied via first-principles calculations. We simulated the knock-on displacement threshold for Ti$_3$C$_2$ MXene sheet via ab initio molecular dynamics simulations and for five other MXenes (Ti$_2$C, Ti$_2$N, Nb$_2$C, Mo$_2$TiC$_2$, and Ti$_3$CN) approximately from defect formation en…
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Interactions of two-dimensional MXene sheets and electron beam of (scanning) transmission electron microscope are studied via first-principles calculations. We simulated the knock-on displacement threshold for Ti$_3$C$_2$ MXene sheet via ab initio molecular dynamics simulations and for five other MXenes (Ti$_2$C, Ti$_2$N, Nb$_2$C, Mo$_2$TiC$_2$, and Ti$_3$CN) approximately from defect formation energies. We evaluated sputtering cross section and sputtering rates, and based on those the evolution of the surface composition. We find that at the exit surface and for "low" TEM energies H and F sputter at equal rates, but at "high" TEM energies the F is sputtered most strongly. In the enter surface, H sputtering dominates. The results were found to be largely similar for all studied MXenes, and although the displacement thresholds varied between the different metal atoms the thresholds were always too high to lead to significant sputtering of the metal atoms. We simulated electron microscope images at the successive stages of sputtering, and found that while it is likely difficult to identify surface groups based on the spot intensities, the local contraction of lattice around O groups should be observable. We also studied MXenes encapsulated with graphene and found them to provide efficient protection from the knock-on damage for all surface group atoms except H.
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Submitted 16 October, 2020; v1 submitted 9 July, 2020;
originally announced July 2020.
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Local vibrational modes of Si vacancy spin qubits in SiC
Authors:
Z. Shang,
A. Hashemi,
Y. Berencén,
H. -P. Komsa,
P. Erhart,
A. V. Krasheninnikov,
G. V. Astakhov
Abstract:
Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacan…
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Silicon carbide is a very promising platform for quantum applications because of extraordinary spin and optical properties of point defects in this technologically-friendly material. These properties are strongly influenced by crystal vibrations, but the exact relationship between them and the behavior of spin qubits is not fully investigated. We uncover the local vibrational modes of the Si vacancy spin qubits in as-grown 4H-SiC. We apply the resonant microwave field to isolate the contribution from one particular type of defects, the so-called V2 center, and observe the zero-phonon line together with seven equally-separated phonon replicas. Furthermore, we present first-principles calculations of the photoluminescence lineshape, which are in excellent agreement with our experimental data. To boost up the calculation accuracy and decrease the computation time, we extract the force constants using machine learning algorithms. This allows us to identify dominant modes in the lattice vibrations coupled to an excited electron during optical emission in the Si vacancy. The resonance phonon energy of 36 meV and the Debye-Waller factor of about 6% are obtained. We establish experimentally that the activation energy of the optically-induced spin polarization is given by the local vibrational energy. Our findings give insight into the coupling of electronic states to vibrational modes in SiC spin qubits, which is essential to predict their spin, optical, mechanical and thermal properties. The approach described can be applied to a large variety of spin defects with spectrally overlapped contributions in SiC as well as in other 3D and 2D materials.
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Submitted 4 February, 2020; v1 submitted 31 January, 2020;
originally announced February 2020.
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Niobium doping induced mirror twin boundaries in MBE grown WSe2 monolayers
Authors:
Bo Wang,
Yipu Xia,
Junqiu Zhang,
Hannu-Pekka Komsa,
Maohai Xie,
Yong Peng,
Chuanhong Jin
Abstract:
Mirror twin boundary (MTB) brings unique 1D physics and properties into two-dimensional transition metal dichalcogenides (TMDCs), but they were rarely observed in non-Mo-based TMDCs. Herein, by post-growth Nb doping, high density 4|4E-W and 4|4P-Se MTBs were introduced into molecular beam epitaxy (MBE) grown WSe2 monolayers. Of them, 4|4E-W MTB with a novel structure was discovered experimentally…
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Mirror twin boundary (MTB) brings unique 1D physics and properties into two-dimensional transition metal dichalcogenides (TMDCs), but they were rarely observed in non-Mo-based TMDCs. Herein, by post-growth Nb doping, high density 4|4E-W and 4|4P-Se MTBs were introduced into molecular beam epitaxy (MBE) grown WSe2 monolayers. Of them, 4|4E-W MTB with a novel structure was discovered experimentally for the first time, while 4|4P-Se MTBs present a random permutations of W and Nb, forming a 1D alloy system. Comparison between the doped and non-doped WSe2 confirmed that Nb dopants are essential for MTB formation. Furthermore, quantitative statistics reveal the areal density of MTBs is directly proportional to the concentration of Nb dopants. To unravel the injection pathway of Nb dopants, first-principles calculations about a set of formation energies for excess Nb atoms with different configurations were conducted, based on which a model explaining the origin of MTBs introduced by excess metal was built. We conclude that the formation of MTBs is mainly driven by the collective evolution of excess Nb atoms introduced into the lattice of host WSe2 crystal and subsequent displacement of metal atoms (W or Nb). This study provides a novel way to tailor the MTBs in 2D TMDC materials via proper metal doping and presents a new opportunities for exploring the intriguing properties.
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Submitted 15 January, 2020;
originally announced January 2020.
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Electronic and Magnetic Characterization of Epitaxial VSe$_2$ Monolayers on Superconducting NbSe$_2$
Authors:
Shawulienu Kezilebieke,
Md Nurul Huda,
Paul Dreher,
Ilkka Manninen,
Yifan Zhou,
Jani Sainio,
Rhodri Mansell,
Miguel M. Ugeda,
Sebastiaan van Dijken,
Hannu-Pekka Komsa,
Peter Liljeroth
Abstract:
Vertical integration of two-dimensional (2D) van der Waals (vdW) materials with different quantum ground states is predicted to lead to novel electronic properties that are not found in the constituent layers. Here, we present the direct synthesis of superconductor-magnet hybrid heterostructures by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer (ML) vanadium diselenide…
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Vertical integration of two-dimensional (2D) van der Waals (vdW) materials with different quantum ground states is predicted to lead to novel electronic properties that are not found in the constituent layers. Here, we present the direct synthesis of superconductor-magnet hybrid heterostructures by combining superconducting niobium diselenide (NbSe$_2$) with the monolayer (ML) vanadium diselenide (VSe$_2$). More significantly, the in-situ growth in ultra-high vacuum (UHV) allows to produce a clean and an atomically sharp interfaces. Combining different characterization techniques and density-functional theory (DFT) calculations, we investigate the electronic and magnetic properties of VSe$_2$ on NbSe$_2$. Low temperature scanning tunneling microscopy (STM) measurements demonstrate a reduction of the superconducting gap on VSe$_2$ layer. This together with the lack of charge density wave signatures indicates magnetization of the sheet, but not of a conventional itinerant ferromagnet.
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Submitted 12 November, 2019; v1 submitted 23 September, 2019;
originally announced September 2019.
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Substitutional Si impurities in monolayer hexagonal boron nitride
Authors:
Mohammad Reza Ahmadpour Monazam,
Ursula Ludacka,
Hannu-Pekka Komsa,
Jani Kotakoski
Abstract:
We report the first observation of substitutional silicon atoms in single-layer hexagonal boron nitride (h-BN) using aberration corrected scanning transmission electron microscopy (STEM). The medium angle annular dark field (MAADF) images reveal silicon atoms exclusively filling boron vacancies. This structure is stable enough under electron beam for repeated imaging. Density functional theory (DF…
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We report the first observation of substitutional silicon atoms in single-layer hexagonal boron nitride (h-BN) using aberration corrected scanning transmission electron microscopy (STEM). The medium angle annular dark field (MAADF) images reveal silicon atoms exclusively filling boron vacancies. This structure is stable enough under electron beam for repeated imaging. Density functional theory (DFT) is used to study the energetics, structure and properties of the experimentally observed structure. The formation energies of all possible charge states of the different silicon substitutions (Si$_\mathrm{B}$, Si$_\mathrm{N}$ and Si$_\mathrm{BN}$) are calculated. The results reveal Si$_\mathrm{B}^{+1}$ as the most stable substitutional configuration. In this case, silicon atom elevates by 0.66Å out of the lattice with unoccupied defect levels in the electronic band gap above the Fermi level. The formation energy shows a slightly exothermic process. Our results unequivocally show that heteroatoms can be incorporated into the h-BN lattice opening way for applications ranging from single-atom catalysis to atomically precise magnetic structures.
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Submitted 17 July, 2019; v1 submitted 4 April, 2019;
originally announced April 2019.
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Tomonaga-Luttinger liquid in a box: electrons confined within MoS$_2$ mirror twin boundaries
Authors:
Wouter Jolie,
Clifford Murray,
Philipp S. Weiß,
Joshua Hall,
Fabian Portner,
Nicolae Atodiresei,
Arkady V. Krasheninnikov,
Carsten Busse,
Hannu-Pekka Komsa,
Achim Rosch,
Thomas Michely
Abstract:
Two- or three-dimensional metals are usually well described by weakly interacting, fermionic quasiparticles. This concept breaks down in one dimension due to strong Coulomb interactions. There, low-energy electronic excitations are expected to be bosonic collective modes, which fractionalize into independent spin and charge density waves. Experimental research on one-dimensional metals is still ha…
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Two- or three-dimensional metals are usually well described by weakly interacting, fermionic quasiparticles. This concept breaks down in one dimension due to strong Coulomb interactions. There, low-energy electronic excitations are expected to be bosonic collective modes, which fractionalize into independent spin and charge density waves. Experimental research on one-dimensional metals is still hampered by their difficult realization, their limited accessibility to measurements, and by competing or obscuring effects such as Peierls distortions or zero bias anomalies. Here we overcome these difficulties by constructing a well-isolated, one-dimensional metal of finite length present in MoS$_2$ mirror twin boundaries. Using scanning tunneling spectroscopy we measure the single-particle density of the interacting electron system as a function of energy and position in the 1D box. Comparison to theoretical modeling provides unambiguous evidence that we are observing spin-charge separation in real space.
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Submitted 21 March, 2019;
originally announced March 2019.
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Efficient method for calculating Raman spectra of solids with impurities and alloys and its application to two-dimensional transition metal dichalcogenides
Authors:
Arsalan Hashemi,
Arkady V. Krasheninnikov,
Martti Puska,
Hannu-Pekka Komsa
Abstract:
Raman spectroscopy is a widely used, powerful, and nondestructive tool for studying the vibrational properties of bulk and low-dimensional materials. Raman spectra can be simulated using first-principles methods, but due to the high computational cost calculations are usually limited only to fairly small unit cells, which makes it difficult to carry out simulations for alloys and defects. Here, we…
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Raman spectroscopy is a widely used, powerful, and nondestructive tool for studying the vibrational properties of bulk and low-dimensional materials. Raman spectra can be simulated using first-principles methods, but due to the high computational cost calculations are usually limited only to fairly small unit cells, which makes it difficult to carry out simulations for alloys and defects. Here, we develop an efficient method for simulating Raman spectra of alloys, benchmark it against full density-functional theory calculations, and apply it to several alloys of two-dimensional transition metal dichalcogenides. In this method, the Raman tensor for the supercell mode is constructed by summing up the Raman tensors of the pristine system weighted by the projections of the supercell vibrational modes to those of the pristine system. This approach is not limited to 2D materials and should be applicable to any crystalline solids with defects and impurities. To efficiently evaluate vibrational modes of very large supercells, we adopt mass approximation, although it is limited to chemically and structurally similar atomic substitutions. To benchmark our method, we first apply it to Mo$_x$W$_{(1-x)}$S$_2$ monolayer in the H-phase, where several experimental reports are available for comparison. Second, we consider Mo$_x$W$_{(1-x)}$Te$_2$ in the T'-phase, which has been proposed to be 2D topological insulator, but where experimental results for the monolayer alloy are still missing. We show that the projection scheme also provides a powerful tool for analyzing the origin of the alloy Raman-active modes in terms of the parent system eigenmodes. Finally, we examine the trends in characteristic Raman signatures for dilute concentrations of impurities in MoS$_2$.
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Submitted 6 February, 2019;
originally announced February 2019.
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Momentum Conserved Ultrafast Charge Transfer Dynamics of Interlayer Excitons in vdW Heterostructures
Authors:
Pranjal Kumar Gogoi,
Yung-Chang Lin,
Ryosuke Senga,
Hannu-Pekka Komsa,
Swee Liang Wong,
Dongzhi Chi,
Arkady V. Krasheninnikov,
Lain-Jong Li,
Mark B. H. Breese,
Steven J. Pennycook,
Andrew T. S. Wee,
Kazu Suenaga
Abstract:
Heterostructures comprising van der Waals (vdW) stacked transition metal dichalcogenide (TMDC) monolayers are a fascinating class of two-dimensional (2D) materials with unique properties. The presence of interlayer excitons, where the electron and the hole remain spatially separated in the two layers due to ultrafast charge transfer, is an intriguing feature of these heterostructures. Inevitably,…
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Heterostructures comprising van der Waals (vdW) stacked transition metal dichalcogenide (TMDC) monolayers are a fascinating class of two-dimensional (2D) materials with unique properties. The presence of interlayer excitons, where the electron and the hole remain spatially separated in the two layers due to ultrafast charge transfer, is an intriguing feature of these heterostructures. Inevitably, the efficiency of 2D heterostructure devices is critically dependent on the charge transfer dynamics. However, the role of the relative rotation angle of the constituent layers on this charge transfer dynamics is hitherto unknown. Here, we investigate MoS$_2$/WSe$_2$ vdW heterostructures (hMWs) using monochromated low-loss electron energy loss (EEL) spectroscopy combined with aberration-corrected scanning transmission electron microscopy (STEM), and report that momentum conservation is a critical factor in the charge transfer dynamics of TMDC vdW heterostructures. The low-loss EEL spectra of the heterostructures with various rotation angles reveal that the charge transfer rate can be about one order-of-magnitude faster in the aligned (or anti-aligned) case than the misaligned cases. These results provide a deeper insight into the role of the fundamental principle of momentum conservation in 2D vdW heterostructure charge transfer dynamics.
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Submitted 1 February, 2019;
originally announced February 2019.
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Thermal Transport in MoS$_2$ from Molecular Dynamics using Different Empirical Potentials
Authors:
Ke Xu,
Alexander J. Gabourie,
Arsalan Hashemi,
Zheyong Fan,
Ning Wei,
Amir Barati Farimani,
Hannu-Pekka Komsa,
Arkady V. Krasheninnikov,
Eric Pop,
Tapio Ala-Nissila
Abstract:
Thermal properties of molybdenum disulfide (MoS$_2$) have recently attracted attention related to fundamentals of heat propagation in strongly anisotropic materials, and in the context of potential applications to optoelectronics and thermoelectrics. Multiple empirical potentials have been developed for classical molecular dynamics (MD) simulations of this material, but it has been unclear which p…
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Thermal properties of molybdenum disulfide (MoS$_2$) have recently attracted attention related to fundamentals of heat propagation in strongly anisotropic materials, and in the context of potential applications to optoelectronics and thermoelectrics. Multiple empirical potentials have been developed for classical molecular dynamics (MD) simulations of this material, but it has been unclear which provides the most realistic results. Here, we calculate lattice thermal conductivity of single- and multi-layer pristine MoS$_2$ by employing three different thermal transport MD methods: equilibrium, nonequilibrium, and homogeneous nonequilibrium ones. These methods allow us to verify the consistency of our results and also facilitate comparisons with previous works, where different schemes have been adopted. Our results using variants of the Stillinger-Weber potential are at odds with some previous ones and we analyze the possible origins of the discrepancies in detail. We show that, among the potentials considered here, the reactive empirical bond order (REBO) potential gives the most reasonable predictions of thermal transport properties as compared to experimental data. With the REBO potential, we further find that isotope scattering has only a small effect on thermal conduction in MoS$_2$ and the in-plane thermal conductivity decreases with increasing layer number and saturates beyond about three layers. We identify the REBO potential as a transferable empirical potential for MD simulations of MoS$_2$ which can be used to study thermal transport properties in more complicated situations such as in systems containing defects or engineered nanoscale features. This work establishes a firm foundation for understanding heat transport properties of MoS$_2$ using MD simulations.
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Submitted 18 November, 2018;
originally announced November 2018.
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Binding energies of exciton complexes in transition metal dichalcogenides and effect of dielectric environment
Authors:
Ilkka Kylänpää,
Hannu-Pekka Komsa
Abstract:
Excitons, trions, biexcitons, and exciton-trion complexes in two-dimensional transition metal dichalcogenide sheets of MoS$_2$, MoSe$_2$, MoTe$_2$, WS$_2$ and WSe$_2$ are studied by means of density functional theory and path integral Monte Carlo method in order to accurately account for the particle-particle correlations. In addition, the effect of dielectric environment on the properties of thes…
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Excitons, trions, biexcitons, and exciton-trion complexes in two-dimensional transition metal dichalcogenide sheets of MoS$_2$, MoSe$_2$, MoTe$_2$, WS$_2$ and WSe$_2$ are studied by means of density functional theory and path integral Monte Carlo method in order to accurately account for the particle-particle correlations. In addition, the effect of dielectric environment on the properties of these exciton complexes is studied by modifying the effective interaction potential between particles. Calculated exciton and trion binding energies are consistent with previous experimental and computational studies, and larger systems such as biexciton and exciton-trion complex are found highly stable. Binding energies of biexcitons are similar or higher than those of trions, but the binding energy of the trion depends significantly stronger on the dielectric environment than that of biexciton. Therefore, as a function of an increasing dielectric constant of the environment the exciton-trion complex "dissociates" to a biexciton rather than to an exciton and a trion.
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Submitted 20 November, 2015; v1 submitted 27 August, 2015;
originally announced August 2015.
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Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity
Authors:
Yung-Chang Lin,
Dumitru O. Dumcenco,
Hannu-Pekka Komsa,
Yoshiko Niimi,
Arkady V. Krasheninnikov,
Ying-Sheng Huang,
Kazu Suenaga
Abstract:
The differences in the behavior of Re (n-type) and Au (p-type) dopant atoms in single-layered MoS2 were investigated by in situ scanning transmission electron microscopy. Re atoms tend to occupy Mo sites, while Au atoms exist as adatoms and show larger mobility under the electron beam. Re substituted to Mo site showed enhanced chemical affinity, evidenced by agglomeration of Re adatoms around thes…
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The differences in the behavior of Re (n-type) and Au (p-type) dopant atoms in single-layered MoS2 were investigated by in situ scanning transmission electron microscopy. Re atoms tend to occupy Mo sites, while Au atoms exist as adatoms and show larger mobility under the electron beam. Re substituted to Mo site showed enhanced chemical affinity, evidenced by agglomeration of Re adatoms around these sites. This may explain the difficulties in achieving a high compositional rate of homogeneous Re doping in MoS2. In addition, an in situ coverage experiment together with density functional theory calculations discovered a high surface reactivity and agglomeration of other impurity atoms such as carbon at the Re doped sites.
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Submitted 9 October, 2013;
originally announced October 2013.
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Electronic structures and optical properties of realistic transition metal dichalcogenide heterostructures from first principles
Authors:
Hannu-Pekka Komsa,
Arkady V. Krasheninnikov
Abstract:
We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene sheets. Contrary to previous works, the systems are constructed in such a way that the unstrained lattice constants of the constituent incommensurate monolayers a…
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We calculate from first principles the electronic structure and optical properties of a number of transition metal dichalcogenide (TMD) bilayer heterostructures consisting of MoS2 layers sandwiched with WS2, MoSe2, MoTe2, BN, or graphene sheets. Contrary to previous works, the systems are constructed in such a way that the unstrained lattice constants of the constituent incommensurate monolayers are retained. We find strong interaction between the Γ-point states in all TMD/TMD heterostructures, which can lead to an indirect gap. On the other hand, states near the K-point remain as in the monolayers. When TMDs are paired with BN or graphene layers, the interaction around Γ-point is negligible, and the electronic structure resembles that of two independent monolayers. Calculations of optical properties of the MoS2/WS2 system show that even when the valence and conduction band edges are located in different layers, the mixing of optical transitions is minimal, and the optical characteristics of the monolayers are largely retained in these heterostructures. The intensity of interlayer transitions is found to be negligibly small, a discouraging result for engineering the optical gap of TMDs by heterostructuring.
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Submitted 11 September, 2013; v1 submitted 23 August, 2013;
originally announced August 2013.
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Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
Authors:
Hannu-Pekka Komsa,
Jani Kotakoski,
Simon Kurasch,
Ossi Lehtinen,
Ute Kaiser,
Arkady V. Krasheninnikov
Abstract:
Using first-principles atomistic simulations, we study the response of atomically-thin layers of transition metal dichalcogenides (TMDs) - a new class of two-dimensional inorganic materials with unique electronic properties - to electron irradiation. We calculate displacement threshold energies for atoms in 21 different compounds and estimate the corresponding electron energies required to produce…
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Using first-principles atomistic simulations, we study the response of atomically-thin layers of transition metal dichalcogenides (TMDs) - a new class of two-dimensional inorganic materials with unique electronic properties - to electron irradiation. We calculate displacement threshold energies for atoms in 21 different compounds and estimate the corresponding electron energies required to produce defects. For a representative structure of MoS2, we carry out high-resolution transmission electron microscopy experiments and validate our theoretical predictions via observations of vacancy formation under exposure to a 80 keV electron beam. We further show that TMDs can be doped by filling the vacancies created by the electron beam with impurity atoms. Thereby, our results not only shed light on the radiation response of a system with reduced dimensionality, but also suggest new ways for engineering the electronic structure of TMDs.
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Submitted 20 June, 2012;
originally announced June 2012.
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Comparison of charged-defect finite-size supercell correction methods in a general framework
Authors:
Hannu-Pekka Komsa,
Tapio T. Rantala
Abstract:
Starting from the total energy expressions within density functional theory, we are able to perform a comparison of several currently used charged-defect finite-size supercell correction schemes in a unified manner. This approach also provides a framework for a further development of corrections not only for DFT supercell calculations, but also for more advanced methods and for complex geometrie…
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Starting from the total energy expressions within density functional theory, we are able to perform a comparison of several currently used charged-defect finite-size supercell correction schemes in a unified manner. This approach also provides a framework for a further development of corrections not only for DFT supercell calculations, but also for more advanced methods and for complex geometries. The comparison is performed for three separate defect cases: a gallium vacancy in GaAs, a beryllium interstitial in GaAs and a vacancy in diamond. We found two methods working sufficiently well for all three cases: a method which is very similar to one presented by Freysoldt, and a slightly altered potential alignment method.
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Submitted 6 June, 2009;
originally announced June 2009.
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Band offset determination of the GaAs/GaAsN interface using the DFT method
Authors:
Hannu-Pekka Komsa,
Eero Arola,
Eric Larkins,
Tapio T. Rantala
Abstract:
The GaAs/GaAsN interface band offset is calculated from first principles. The electrostatic potential at the core regions of the atoms is used to estimate the interface potential and align the band structures obtained from respective bulk calculations. First, it is shown that the present method performs well on the well-known conventional/conventional AlAs/GaAs (001) superlattice system. Then th…
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The GaAs/GaAsN interface band offset is calculated from first principles. The electrostatic potential at the core regions of the atoms is used to estimate the interface potential and align the band structures obtained from respective bulk calculations. First, it is shown that the present method performs well on the well-known conventional/conventional AlAs/GaAs (001) superlattice system. Then the method is applied to a more challenging nonconventional/conventional GaAsN/GaAs (001) system, and consequently type I band lineup and valence-band offset of about 35 meV is obtained for nitrogen concentration of about 3 %, in agreement with the recent experiments. We also investigate the effect of strain on the band lineup. For the GaAsN layer longitudinally strained to the GaAs lattice constant, the type II lineup with a nearly vanishing band offset is found, suggesting that the anisotropic strain along the interface is the principal cause for the often observed type I lineup.
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Submitted 17 March, 2008;
originally announced March 2008.
