Showing 1–50 of 58 results for author: Kozuka, Y

Theory for Tunnel Magnetoresistance Oscillation

Authors: Keisuke Masuda, Thomas Scheike, Hiroaki Sukegawa, Yusuke Kozuka, Seiji Mitani, Yoshio Miura

Abstract: The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To explain this, we here introduce a superposition of wave functions with opposite spins and different Fermi momenta, based on the fact that spin-flip scattering near… ▽ More The universal oscillation of the tunnel magnetoresistance (TMR) ratio as a function of the insulating barrier thickness in crystalline magnetic tunnel junctions (MTJs) is a long-standing unsolved problem in condensed matter physics. To explain this, we here introduce a superposition of wave functions with opposite spins and different Fermi momenta, based on the fact that spin-flip scattering near the interface provides a hybridization between majority- and minority-spin states. In a typical Fe/MgO/Fe MTJ, we solve the tunneling problem and show that the TMR ratio oscillates with a period of $\sim3\,$Å by varying the MgO thickness, consistent with previous and present experimental observations. △ Less

Submitted 17 June, 2024; v1 submitted 12 June, 2024; originally announced June 2024.

Comments: 6 pages,4 figures

Kondo effect in electrostatically defined ZnO quantum dots

Authors: Kosuke Noro, Yusuke Kozuka, Kazuma Matsumura, Takeshi Kumasaka, Yoshihiro Fujiwara, Atsushi Tsukazaki, Masashi Kawasaki, Tomohiro Otsuka

Abstract: Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present the first demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of… ▽ More Quantum devices such as spin qubits have been extensively investigated in electrostatically confined quantum dots using high-quality semiconductor heterostructures like GaAs and Si. Here, we present the first demonstration of electrostatically forming the quantum dots in ZnO heterostructures. Through the transport measurement, we uncover the distinctive signature of the Kondo effect independent of the even-odd electron number parity, which contrasts with the typical behavior of the Kondo effect in GaAs. By analyzing temperature and magnetic field dependences, we find that the absence of the even-odd parity in the Kondo effect is not straightforwardly interpreted by the considerations developed for conventional semiconductors. We propose that, based on the unique parameters of ZnO, electron correlation likely plays a fundamental role in this observation. Our study not only clarifies the physics of correlated electrons in the quantum dot but also holds promise for applications in quantum devices, leveraging the unique features of ZnO. △ Less

Submitted 21 November, 2023; originally announced November 2023.

Comments: 16 pages, 4 figures

Observation of charge-to-spin conversion with giant efficiency at Ni$_{0.8}$Fe$_{0.2}$/Bi$_{2}$WO$_{6}$ interface

Authors: Saikat Das, Satoshi Sugimoto, Varun Kumar Kushwaha, Yusuke Kozuka, Shinya Kasai

Abstract: Magnetization switching using spin-orbit torque offers a promising route to developing non-volatile memory technologies. The prerequisite, however, is the charge-to-spin current conversion, which has been achieved traditionally by harnessing the spin-orbit interaction in heavy metals, topological insulators, and heterointerfaces hosting a high-mobility two-dimensional electron gas. Here, we report… ▽ More Magnetization switching using spin-orbit torque offers a promising route to developing non-volatile memory technologies. The prerequisite, however, is the charge-to-spin current conversion, which has been achieved traditionally by harnessing the spin-orbit interaction in heavy metals, topological insulators, and heterointerfaces hosting a high-mobility two-dimensional electron gas. Here, we report the observation of charge-to-spin current conversion at the interface between ferromagnetic Ni$_{0.8}$Fe$_{0.2}$ and ferroelectric Bi$_{2}$WO$_{6}$ thin films. The resulting spin-orbit torque consists of damping-like and field-like components, and the estimated efficiency amounts to about 0.48 $\pm$ 0.02, which translates to 0.96 $\pm$ 0.04 nm$^{-1}$ in terms of interfacial efficiency. These numbers are comparable to contemporary spintronic materials exhibiting giant spin-orbit torque efficiency. We suggest that the Rashba Edelstein effect underpins the charge-to-spin current conversion on the interface side of Ni$_{0.8}$Fe$_{0.2}$. Further, we provide an intuitive explanation for the giant efficiency in terms of the spin-orbit proximity effect, which is enabled by orbital hybridization between W and Ni (Fe) atoms across the interface. Our work highlights that Aurivillius compounds are a potential addition to the emerging transition metal oxide-based spin-orbit materials. △ Less

Submitted 5 April, 2023; originally announced April 2023.

Comments: 20 pages

Journal ref: APL Materials 11, 041113 (2023)

Ensemble spin relaxation of shallow donor qubits in ZnO

Authors: Vasileios Niaouris, Mikhail V. Durnev, Xiayu Linpeng, Maria L. K. Viitaniemi, Christian Zimmermann, Aswin Vishnuradhan, Y. Kozuka, M. Kawasaki, Kai-Mei C. Fu

Abstract: We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$, with $4\leq n\leq 5$, over a field range of 1.75 T to 7 T. We derive an analytic ex… ▽ More We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$, with $4\leq n\leq 5$, over a field range of 1.75 T to 7 T. We derive an analytic expression for the donor spin-relaxation rate due to spin-orbit (admixture mechanism) and electron-phonon (piezoelectric) coupling for the wurtzite crystal symmetry. Excellent quantitative agreement is found between experiment and theory suggesting the admixture spin-orbit mechanism is the dominant contribution to $T_1$ in the measured magnetic field range. Temperature and excitation-energy dependent measurements indicate a donor density dependent interaction may contribute to small deviations between experiment and theory. The longest $T_1$ measured is 480 ms at 1.75 T with increasing $T_1$ at smaller fields theoretically expected. This work highlights the extremely long longitudinal spin-relaxation time for ZnO donors due to their small spin-orbit coupling. △ Less

Submitted 15 April, 2022; v1 submitted 22 November, 2021; originally announced November 2021.

Comments: 9 pages, 11 figures

Negative correlation between the linear and the nonlinear conductance in magnetic tunnel junctions

Authors: Shuichi Iwakiri, Satoshi Sugimoto, Yasuhiro Niimi, Yusuke Kozuka, Yukiko K. Takahashi, Shinya Kasai, Kensuke Kobayashi

Abstract: The current-voltage ($IV$) characteristics beyond the linear response regime of magnetic tunnel junction (MTJ) is systematically investigated. We find a clear negative correlation between the two coefficients to characterize the linear ($I$$\propto$$V$) and the lowest-order nonlinear ($I$$\propto$$V^3$) currents, which holds regardless of the temperature and the thickness of the tunnel barrier. Th… ▽ More The current-voltage ($IV$) characteristics beyond the linear response regime of magnetic tunnel junction (MTJ) is systematically investigated. We find a clear negative correlation between the two coefficients to characterize the linear ($I$$\propto$$V$) and the lowest-order nonlinear ($I$$\propto$$V^3$) currents, which holds regardless of the temperature and the thickness of the tunnel barrier. This observation cannot simply be explained by the standard tunneling model such as the Brinkman model, suggesting a mechanism intrinsic to MTJ. We propose a phenomenological model based on the Julliére model that attributes the observed negative correlation to the spin-flip tunneling assisted by a magnon. These results suggest a fundamental law between the linear and the nonlinear response of MTJ. △ Less

Submitted 21 June, 2021; originally announced June 2021.

Comments: 7 pages, 7 figures

Journal ref: Phys. Rev. B 103, 245427 (2021)

Observation of Nonlinear Spin-Charge Conversion in the Thin Film of Nominally Centrosymmetric Dirac Semimetal SrIrO3 at Room Temperature

Authors: Y. Kozuka, S. Isogami, K. Masuda, Y. Miura, Saikat Das, J. Fujioka, T. Ohkubo, S. Kasai

Abstract: Spin-charge conversion via spin-orbit interaction is one of the core concepts in the current spintronics research. The efficiency of the interconversion between charge and spin current is estimated based on Berry curvature of Bloch wavefunction in the linear-response regime. Beyond the linear regime, nonlinear spin-charge conversion in the higher-order electric field terms has recently been demons… ▽ More Spin-charge conversion via spin-orbit interaction is one of the core concepts in the current spintronics research. The efficiency of the interconversion between charge and spin current is estimated based on Berry curvature of Bloch wavefunction in the linear-response regime. Beyond the linear regime, nonlinear spin-charge conversion in the higher-order electric field terms has recently been demonstrated in noncentrosymmetric materials with nontrivial spin texture in the momentum space. Here we report the observation of the nonlinear charge-spin conversion in a nominally centrosymmetric oxide material, SrIrO3, by breaking inversion symmetry at the interface. A large second-order magnetoelectric coefficient is observed at room temperature because of the antisymmetric spin-orbit interaction at the interface of Dirac semimetallic bands, which is subject to the symmetry constraint of the substrates. Our study suggests that nonlinear spin-charge conversion can be induced in many materials with strong spin-orbit interaction at the interface by breaking the local inversion symmetry to give rise to spin splitting in otherwise spin degenerate systems. △ Less

Submitted 7 May, 2021; originally announced May 2021.

Comments: 34 pages, 1 table, 13 figures

Journal ref: Phys. Rev. Lett. 126, 236801 (2021)

Competing correlated states around the zero field Wigner crystallization transition of electrons in two-dimensions

Authors: Joseph Falson, Inti Sodemann, Brian Skinner, Daniela Tabrea, Yusuke Kozuka, Atsushi Tsukazaki, Masashi Kawasaki, Klaus von Klitzing, Jurgen H Smet

Abstract: The competition between kinetic energy and Coulomb interactions in electronic systems can lead to complex many-body ground states with competing superconducting, charge density wave, and magnetic orders. Here we study the low temperature phases of a strongly interacting zinc-oxide-based high mobility two dimensional electron system that displays a tunable metal-insulator transition. Through a comp… ▽ More The competition between kinetic energy and Coulomb interactions in electronic systems can lead to complex many-body ground states with competing superconducting, charge density wave, and magnetic orders. Here we study the low temperature phases of a strongly interacting zinc-oxide-based high mobility two dimensional electron system that displays a tunable metal-insulator transition. Through a comprehensive analysis of the dependence of electronic transport on temperature, carrier density, in-plane and perpendicular magnetic fields, and voltage bias, we provide evidence for the existence of competing correlated metallic and insulating states with varying degrees of spin polarization. Our system features an unprecedented level of agreement with the state-of-the-art Quantum Monte Carlo phase diagram of the ideal jellium model, including a Wigner crystallization transition at a value of the interaction parameter $r_s\sim 30$ and the absence of a pure Stoner transition. In-plane field dependence of transport reveals a new low temperature state with partial spin polarization separating the spin unpolarized metal and the Wigner crystal, which we examine against possible theoretical scenarios such as an anti-ferromagnetic crystal, Coulomb induced micro-emulsions, and disorder driven puddle formation. △ Less

Submitted 30 March, 2021; originally announced March 2021.

Deterministic influence of substrate-induced oxygen vacancy diffusion on $Bi_{2}WO_{6}$ thin film growth

Authors: Saikat Das, Tadakatsu Ohkubo, Shinya Kasai, Yusuke Kozuka

Abstract: In oxide epitaxy, the growth temperature and background oxygen partial pressure are considered as the most critical factors that control the phase stability of an oxide thin film. Here, we report an unusual case wherein diffusion of oxygen vacancies from the substrate overpowers the growth temperature and oxygen partial pressure to deterministically influence the phase stability of $Bi_{2}WO_{6}$… ▽ More In oxide epitaxy, the growth temperature and background oxygen partial pressure are considered as the most critical factors that control the phase stability of an oxide thin film. Here, we report an unusual case wherein diffusion of oxygen vacancies from the substrate overpowers the growth temperature and oxygen partial pressure to deterministically influence the phase stability of $Bi_{2}WO_{6}$ thin film grown by the pulsed laser deposition technique. We show that when grown on an oxygen-deficient $SrTiO_{3}$ substrate, the $Bi_{2}WO_{6}$ film exhibits a mixture of (001) and (100)/(010)-oriented domains alongside (001)-oriented impurity $WO_{3}$ phases. The (100)/(010)-oriented $Bi_{2}WO_{6}$ phases form a self-organized 3D nanopillar-structure, yielding a very rough film surface morphology. Oxygen annealing of the substrate or using a few monolayer-thick $SrRuO_{3}$ as the blocking layer for oxygen vacancy diffusion enables growing high-quality single-crystalline $Bi_{2}WO_{6}$ (001) thin film exhibiting an atomically smooth film surface with step-terrace structure. We propose that the large oxide-ion conductivity of $Bi_{2}WO_{6}$ facilitates diffusion of oxygen vacancies from the substrate during the film growth, accelerating the evaporation of volatile Bismuth (Bi), which hinders the epitaxial growth. Our work provides a general guideline for high-quality thin film growth of Aurivillius compounds and other oxide-ion conductors containing volatile elements. △ Less

Submitted 26 January, 2021; originally announced January 2021.

Comments: This document is the Accepted Manuscript version of a Published Work that appeared in final form in Crystal Growth & Design, copyright $©$ American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see: https://pubs.acs.org/doi/abs/10.1021/acs.cgd.0c01428 .This submission contains 24 pages

Journal ref: Crystal Growth & Design, 2021

Interplay of spin-orbit coupling and Coulomb interaction in ZnO-based electron system

Authors: D. Maryenko, M. Kawamura, A. Ernst, V. K. Dugaev, E. Ya. Sherman, M. Kriener, M. S. Bahramy, Y. Kozuka, M. Kawasaki

Abstract: Spin-orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron-electron interaction regimes, where the single electron picture holds. However, SOC can profoundly compete against Coulomb interaction, which could lead to the emergence of uncon… ▽ More Spin-orbit coupling (SOC) is pivotal for various fundamental spin-dependent phenomena in solids and their technological applications. In semiconductors, these phenomena have been so far studied in relatively weak electron-electron interaction regimes, where the single electron picture holds. However, SOC can profoundly compete against Coulomb interaction, which could lead to the emergence of unconventional electronic phases. Since SOC depends on the electric field in the crystal including contributions of itinerant electrons, electron-electron interactions can modify this coupling. Here we demonstrate the emergence of SOC effect in a high-mobility two-dimensional electron system in a simple band structure MgZnO/ZnO semiconductor. This electron system features also strong electron-electron interaction effects. By changing the carrier density with Mg-content, we tune the SOC strength and achieve its interplay with electron-electron interaction. These systems pave a way to emergent spintronic phenomena in strong electron correlation regime and to the formation of novel quasiparticles with the electron spin strongly coupled to the density. △ Less

Submitted 6 October, 2020; originally announced October 2020.

Comments: Main Text (4 Figures), Supplementary notes (4 Figures)

Current scaling of the topological quantum phase transition between a quantum anomalous Hall insulator and a trivial insulator

Authors: Minoru Kawamura, Masataka Mogi, Ryutaro Yoshimi, Atsushi Tsukazaki, Yusuke Kozuka, Kei S. Takahashi, Masashi Kawasaki, Yoshinori Tokura

Abstract: We report a current scaling study of a quantum phase transition between a quantum anomalous Hall insulator and a trivial insulator on the surface of a heterostructure film of magnetic topological insulators. The transition was observed by tilting the magnetization while measuring the Hall conductivity $σ_{xy}$. The transition curves of $σ_{xy}$ taken under various excitation currents cross each ot… ▽ More We report a current scaling study of a quantum phase transition between a quantum anomalous Hall insulator and a trivial insulator on the surface of a heterostructure film of magnetic topological insulators. The transition was observed by tilting the magnetization while measuring the Hall conductivity $σ_{xy}$. The transition curves of $σ_{xy}$ taken under various excitation currents cross each other at a single point, exemplifying a quantum critical behavior of the transition. The slopes of the transition curves follow a power law dependence of the excitation current, giving a scaling exponent. Combining with the result of the previous temperature scaling study, critical exponents $ν$ for the localization length and $p$ for the coherence length are separately evaluated as $ν$ = 2.8 $\pm$ 0.3 and $p$ = 3.3 $\pm$ 0.3. △ Less

Submitted 2 July, 2020; originally announced July 2020.

Comments: 6 pages, 4 figures

Microwave response of interacting oxide two-dimensional electron systems

Authors: D. Tabrea, I. A. Dmitriev, S. I. Dorozhkin, B. P. Gorshunov, A. V. Boris, Y. Kozuka, A. Tsukazaki, M. Kawasaki, K. von Klitzing, J. Falson

Abstract: We present an experimental study on microwave illuminated high mobility MgZnO/ZnO based two-dimensional electron systems with different electron densities and, hence, varying Coulomb interaction strength. The photoresponse of the low-temperature dc resistance in perpendicular magnetic field is examined in low and high density samples over a broad range of illumination frequencies. In low density s… ▽ More We present an experimental study on microwave illuminated high mobility MgZnO/ZnO based two-dimensional electron systems with different electron densities and, hence, varying Coulomb interaction strength. The photoresponse of the low-temperature dc resistance in perpendicular magnetic field is examined in low and high density samples over a broad range of illumination frequencies. In low density samples a response due to cyclotron resonance (CR) absorption dominates, while high density samples exhibit pronounced microwave-induced resistance oscillations (MIRO). Microwave transmission experiments serve as a complementary means of detecting the CR over the entire range of electron densities and as a reference for the band mass unrenormalized by interactions. Both CR and MIRO-associated features in the resistance permit extraction of the effective mass of electrons but yield two distinct values. The conventional cyclotron mass representing center-of-mass dynamics exhibits no change with density and coincides with the band electron mass of bulk ZnO, while MIRO mass reveals a systematic increase with lowering electron density consistent with renormalization expected in interacting Fermi liquids. △ Less

Submitted 24 June, 2020; originally announced June 2020.

Journal ref: Phys. Rev. B 102, 115432 (2020)

Multiple modes of a single spin torque oscillator under the non-linear region

Authors: Satoshi Sugimoto, Shuichi Iwakiri, Yusuke Kozuka, Yukiko Takahashi, Yasuhiro Niimi, Kensuke Kobayashi, Shinya Kasai

Abstract: A numerical investigation is conducted for a single spin-torque oscillator under the non-linear region. A large angle precession triggers the generation of multiple modes without any feedbacked circuits and/or magnetic couplings with neighboring oscillators. Our simulations show that a single eigenmode of a given spin-torque oscillator can trigger up to six discrete modes as the sideband modes. Th… ▽ More A numerical investigation is conducted for a single spin-torque oscillator under the non-linear region. A large angle precession triggers the generation of multiple modes without any feedbacked circuits and/or magnetic couplings with neighboring oscillators. Our simulations show that a single eigenmode of a given spin-torque oscillator can trigger up to six discrete modes as the sideband modes. These findings will offer the new functionality to the STO for developing the spintronic logic circuits. △ Less

Submitted 23 July, 2020; v1 submitted 15 May, 2020; originally announced May 2020.

Comments: 10 pages, 5 figures

Journal ref: AIP Advances 10, 075115 (2020)

Generation of Multipeak Spectrum of Spin Torque Oscillator in Non-linear Regime

Authors: Shuichi Iwakiri, Satoshi Sugimoto, Yasuhiro Niimi, Kensuke Kobayashi, Yusuke Kozuka, Yukiko K. Takahashi, Shinya Kasai

Abstract: We investigate the spectral characteristics of spin torque oscillator (STO) excited by the spin Hall-induced spin current. We observe that the modest spin current injection triggers the conventional single peak oscillating behavior of STO. As the spin current is further increased to enter the non-linear regime, we find the transition of the spectrum from a single peak to multipeak structure whose… ▽ More We investigate the spectral characteristics of spin torque oscillator (STO) excited by the spin Hall-induced spin current. We observe that the modest spin current injection triggers the conventional single peak oscillating behavior of STO. As the spin current is further increased to enter the non-linear regime, we find the transition of the spectrum from a single peak to multipeak structure whose frequency spacing is constant. This behavior can be primarily explained by the extremely broadened peak of the STO, which is accompanied by the frequency-dependent filtering by the transmission line. To explain the observation more quantitatively, we also discuss that the multipeak may reflect the characteristics of the intrinsic dynamics of STO in the non-linear regime. △ Less

Submitted 15 May, 2020; originally announced May 2020.

Comments: 15 pages, 3 figures

Journal ref: Appl. Phys. Lett. 117, 022406 (2020)

Anomalous Enhancement of Upper Critical Field in Sr2RuO4 Thin Films

Authors: M. Uchida, M. Ide, M. Kawamura, K. S. Takahashi, Y. Kozuka, Y. Tokura, M. Kawasaki

Abstract: We report large enhancement of upper critical field Hc2 observed in superconducting Sr2RuO4 thin films. Through dimensional crossover approaching two dimensions, Hc2 except the in-plane field direction is dramatically enhanced compared to bulks, following a definite relation distinct from bulk one between Hc2 and the transition temperature. The anomalous enhancement of Hc2 is highly suggestive of… ▽ More We report large enhancement of upper critical field Hc2 observed in superconducting Sr2RuO4 thin films. Through dimensional crossover approaching two dimensions, Hc2 except the in-plane field direction is dramatically enhanced compared to bulks, following a definite relation distinct from bulk one between Hc2 and the transition temperature. The anomalous enhancement of Hc2 is highly suggestive of important changes of the superconducting properties, possibly accompanied with rotation of the triplet d-vector. Our findings will become a crucial step to further explore exotic properties by employing Sr2RuO4 thin films. △ Less

Submitted 20 March, 2019; originally announced March 2019.

Comments: 15 pages, 4 figures

Journal ref: Phys. Rev. B 99, 161111 (2019)

Quantised conductance of one-dimensional strongly-correlated electrons in an oxide heterostructure

Authors: H. Hou, Y. Kozuka, Jun-Wei Liao, L. W. Smith, D. Kos, J. P. Griffiths, J. Falson, A. Tsukazaki, M. Kawasaki, C. J. B. Ford

Abstract: Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures and observe ballistic electron transport with conductance quantised in units of 2e^{2}/h. Using DC-bias and in-plane field measurements, we find that the g-facto… ▽ More Oxide heterostructures are versatile platforms with which to research and create novel functional nanostructures. We successfully develop one-dimensional (1D) quantum-wire devices using quantum point contacts on MgZnO/ZnO heterostructures and observe ballistic electron transport with conductance quantised in units of 2e^{2}/h. Using DC-bias and in-plane field measurements, we find that the g-factor is enhanced to around 6.8, more than three times the value in bulk ZnO. We show that the effective mass m^{*} increases as the electron density decreases, resulting from the strong electron-electron interactions. In this strongly interacting 1D system we study features matching the 0.7 conductance anomalies up to the fifth subband. This paper demonstrates that high-mobility oxide heterostructures such as this can provide good alternatives to conventional III-V semiconductors in spintronics and quantum computing as they do not have their unavoidable dephasing from nuclear spins. This paves a way for the development of qubits benefiting from the low defects of an undoped heterostructure together with the long spin lifetimes achievable in silicon. △ Less

Submitted 8 March, 2019; originally announced March 2019.

Andreev reflection at the interface with an oxide in the quantum Hall regime

Authors: Yusuke Kozuka, Atsushi Sakaguchi, Joseph Falson, Atsushi Tsukazaki, Masashi Kawasaki

Abstract: Quantum Hall/superconductor junctions have been an attractive topic as the two macroscopically quantum states join at the interface. Despite longstanding efforts, however, experimental understanding of this system has not been settled yet. One of the reasons is that most semiconductors hosting high-mobility two-dimensional electron systems (2DES) usually form Schottky barriers at the metal contact… ▽ More Quantum Hall/superconductor junctions have been an attractive topic as the two macroscopically quantum states join at the interface. Despite longstanding efforts, however, experimental understanding of this system has not been settled yet. One of the reasons is that most semiconductors hosting high-mobility two-dimensional electron systems (2DES) usually form Schottky barriers at the metal contacts, preventing efficient proximity between the quantum Hall edge states and Cooper pairs. Only recently have relatively transparent 2DES/superconductor junctions been investigated in graphene. In this study, we propose another material system for investigating 2DES/superconductor junctions, that is ZnO-based heterostrcuture. Due to the ionic nature of ZnO, a Schottky barrier is not effectively formed at the contact with a superconductor MoGe, as evidenced by the appearance of Andreev reflection at low temperatures. With applying magnetic field, while clear quantum Hall effect is observed for ZnO 2DES, conductance across the junction oscillates with the filling factor of the quantum Hall states. We find that Andreev reflection is suppressed in the well developed quantum Hall regimes, which we interpret as a result of equal probabilities of normal and Andreev reflections as a result of multiple Andreev reflection at the 2DES/superconductor interface. △ Less

Submitted 17 October, 2018; originally announced October 2018.

Comments: 18 pages, 8 figures

Journal ref: J. Phys. Soc. Jpn. 87, 124712 (2018)

Topological quantum phase transition in magnetic topological insulator upon magnetization rotation

Authors: Minoru Kawamura, Masataka Mogi, Ryutaro Yoshimi, Atsushi Tsukazaki, Yusuke Kozuka, Kei. S. Takahashi, Masashi Kawasaki, Yoshinori Tokura

Abstract: We report a continuous phase transition between quantum-anomalous-Hall and trivial-insulator phases in a magnetic topological insulator upon magnetization rotation. The Hall conductivity transits from one plateau of quantized Hall conductivity $e^2/h$ to the other plateau of zero Hall conductivity. The transition curves taken at various temperatures cross almost at a single point, exemplifying the… ▽ More We report a continuous phase transition between quantum-anomalous-Hall and trivial-insulator phases in a magnetic topological insulator upon magnetization rotation. The Hall conductivity transits from one plateau of quantized Hall conductivity $e^2/h$ to the other plateau of zero Hall conductivity. The transition curves taken at various temperatures cross almost at a single point, exemplifying the critical behavior of the transition. The slope of the transition curves follows a power-law temperature dependence with a critical exponent of $-0.61$. This suggests a common underlying origin in the plateau transitions between the QAH and quantum Hall systems, which is a percolation of one-dimensional chiral edge channels. △ Less

Submitted 27 August, 2018; originally announced August 2018.

Comments: 3 figures

Journal ref: Phys. Rev. B 98, 140404 (2018)

Negative magnetoresistance suppressed through topological phase transition in (Cd1-xZnx)3As2 films

Authors: S. Nishihaya, M. Uchida, Y. Nakazawa, K. Akiba, M. Kriener, Y. Kozuka, A. Miyake, Y. Taguchi, M. Tokunaga, M. Kawasaki

Abstract: The newly discovered topological Dirac semimetals host the possibilities of various topological phase transitions through the control of spin-orbit coupling as well as symmetries and dimensionalities. Here, we report a magnetotransport study of high-mobility (Cd1-xZnx)3As2 films, where the topological Dirac semimetal phase can be turned into a trivial insulator via chemical substitution. By high-f… ▽ More The newly discovered topological Dirac semimetals host the possibilities of various topological phase transitions through the control of spin-orbit coupling as well as symmetries and dimensionalities. Here, we report a magnetotransport study of high-mobility (Cd1-xZnx)3As2 films, where the topological Dirac semimetal phase can be turned into a trivial insulator via chemical substitution. By high-field measurements with a Hall-bar geometry, magnetoresistance components ascribed to the chiral charge pumping have been distinguished from other extrinsic effects. The negative magnetoresistance exhibits a clear suppression upon Zn doping, reflecting decreasing Berry curvature of the band structure as the topological phase transition is induced by reducing the spin-orbit coupling. △ Less

Submitted 6 June, 2018; originally announced June 2018.

Comments: 16 pages, 6 figures

Journal ref: Physical Review B 97, 245103 (2018)

Gate-tuned quantum Hall states in Dirac semimetal (Cd1-xZnx)3As2

Authors: Shinichi Nishihaya, Masaki Uchida, Yusuke Nakazawa, Markus Kriener, Yusuke Kozuka, Yasujiro Taguchi, Masashi Kawasaki

Abstract: The recent discovery of topological Dirac semimetals (DSM) has provoked intense curiosity not only on Weyl physics in solids, but also on topological phase transitions originating from DSM. One example is controlling the dimensionality to realize two-dimensional quantum phases such as quantum Hall and quantum spin Hall states. For investigating these phases, the Fermi level is a key controlling pa… ▽ More The recent discovery of topological Dirac semimetals (DSM) has provoked intense curiosity not only on Weyl physics in solids, but also on topological phase transitions originating from DSM. One example is controlling the dimensionality to realize two-dimensional quantum phases such as quantum Hall and quantum spin Hall states. For investigating these phases, the Fermi level is a key controlling parameter. From this perspective, we report here the carrier-density control of quantum Hall states realized in thin films of DSM Cd3As2. Chemical doping of Zn combined with electrostatic gating has enabled us to tune the carrier density over a wide range and continuously even across the charge neutrality point. Comprehensive analyses of the gate-tuned quantum transport have revealed Landau level formation from linearly dispersed sub-bands and its contribution to the quantum Hall states. Our achievements pave the way also for investigating the low energy physics near the Dirac points of DSM. △ Less

Submitted 19 May, 2018; originally announced May 2018.

Comments: 20 pages, 4 figures

Journal ref: Science Advances 4, eaar5668 (2018)

Structural characterisation of high-mobility Cd3As2 films crystallised on SrTiO3

Authors: Yusuke Nakazawa, Masaki Uchida, Shinichi Nishihaya, Markus Kriener, Yusuke Kozuka, Yasujiro Taguchi, Masashi Kawasaki

Abstract: Cd3As2 has long been known as a high-mobility semiconductor. The recent finding of a topological semimetal state in this compound has demanded growth of epitaxial films with high crystallinity and controlled thickness. Here we report the structural characterisation of Cd3As2 films grown on SrTiO3 substrates by solid-phase epitaxy at high temperatures up to 600 C by employing optimised capping laye… ▽ More Cd3As2 has long been known as a high-mobility semiconductor. The recent finding of a topological semimetal state in this compound has demanded growth of epitaxial films with high crystallinity and controlled thickness. Here we report the structural characterisation of Cd3As2 films grown on SrTiO3 substrates by solid-phase epitaxy at high temperatures up to 600 C by employing optimised capping layers and substrates. The As triangular lattice is epitaxially stacked on the Ti square lattice of the (001) SrTiO3 substrate, producing (112)-oriented Cd3As2 films exhibiting high crystallinity with a rocking-curve width of 0.02 and a high electron mobility exceeding 30,000 cm2/Vs. The systematic characterisation of films annealed at various temperatures allowed us to identify two-step crystallisation processes in which out-of-plane and subsequently in-plane directions occur with increasing annealing temperature. Our findings on the high-temperature crystallisation process of Cd3As2 enable a unique approach for fabricating high-quality Cd3As2 films and elucidating quantum transport by back gating through the SrTiO3 substrate. △ Less

Submitted 17 April, 2018; originally announced April 2018.

Comments: 10 pages, 4 figures

Journal ref: Scientific Reports 8, 2244 (2018)

A cascade of phase transitions in an orbitally mixed half-filled Landau level

Authors: J. Falson, D. Tabrea, D. Zhang, I. Sodemann, Y. Kozuka, A. Tsukazaki, M. Kawasaki, K. von Klitzing, J. H. Smet

Abstract: Half-filled Landau levels host an emergent Fermi-liquid which displays an instability towards pairing, culminating in a gapped even-denominator fractional quantum Hall ground state. While this pairing may be probed by tuning the polarization of carriers in competing orbital and spin degrees of freedom, sufficiently high quality platforms offering such tunability remain few. Here we explore the gro… ▽ More Half-filled Landau levels host an emergent Fermi-liquid which displays an instability towards pairing, culminating in a gapped even-denominator fractional quantum Hall ground state. While this pairing may be probed by tuning the polarization of carriers in competing orbital and spin degrees of freedom, sufficiently high quality platforms offering such tunability remain few. Here we explore the ground states at filling factor $ν$ = 5/2 in ZnO-based two-dimensional electron systems through a forced intersection of opposing spin branches of Landau levels taking quantum numbers $N$ = 1 and 0. We reveal a cascade of phases with distinct magnetotransport features including a gapped phase polarized in the $N$ = 1 level and a compressible phase in N = 0, along with an unexpected Fermi-liquid, a second gapped, and a strongly anisotropic nematic-like phase at intermediate polarizations when the levels are near degeneracy. The phase diagram is produced by analyzing the proximity of the intersecting levels and highlights the excellent reproducibility and controllability ZnO offers for exploring exotic fractionalized electronic phases. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Journal ref: Science Advances 4, eaat8742 (2018)

Coherence properties of shallow donor qubits in ZnO

Authors: Xiayu Linpeng, Maria L. K. Viitaniemi, Aswin Vishnuradhan, Y. Kozuka, Cameron Johnson, M. Kawasaki, Kai-Mei C. Fu

Abstract: Defects in crystals are leading candidates for photon-based quantum technologies, but progress in developing practical devices critically depends on improving defect optical and spin properties. Motivated by this need, we study a new defect qubit candidate, the shallow donor in ZnO. We demonstrate all-optical control of the electron spin state of the donor qubits and measure the spin coherence pro… ▽ More Defects in crystals are leading candidates for photon-based quantum technologies, but progress in developing practical devices critically depends on improving defect optical and spin properties. Motivated by this need, we study a new defect qubit candidate, the shallow donor in ZnO. We demonstrate all-optical control of the electron spin state of the donor qubits and measure the spin coherence properties. We find a longitudinal relaxation time T$_1$ exceeding 100 ms, an inhomogeneous dephasing time T$_2^*$ of $17\pm2$ ns, and a Hahn spin-echo time T$_2$ of $50\pm13$ $μ$s. The magnitude of T$_2^*$ is consistent with the inhomogeneity of the nuclear hyperfine field in natural ZnO. Possible mechanisms limiting T$_2$ include instantaneous diffusion and nuclear spin diffusion (spectral diffusion). These results are comparable to the phosphorous donor system in natural silicon, suggesting that with isotope and chemical purification long qubit coherence times can be obtained for donor spins in a direct band gap semiconductor. This work motivates further research on high-purity material growth, quantum device fabrication, and high-fidelity control of the donor:ZnO system for quantum technologies. △ Less

Submitted 23 May, 2018; v1 submitted 9 February, 2018; originally announced February 2018.

Journal ref: Phys. Rev. Applied 10, 064061 (2018)

Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films

Authors: Yuki Ohuchi, Jobu Matsuno, Naoki Ogawa, Yusuke Kozuka, Masaki Uchida, Yoshinori Tokura, Masashi Kawasaki

Abstract: One of the key technologies in spintronics is to tame spin-orbit coupling (SOC) that links spin and motion of electrons, giving rise to intriguing magneto-transport properties in itinerant magnets. Prominent examples of such SOC-based phenomena are anomalous and topological Hall effects. However, controlling them by electric field has remained unachieved since electric field tends to be screened i… ▽ More One of the key technologies in spintronics is to tame spin-orbit coupling (SOC) that links spin and motion of electrons, giving rise to intriguing magneto-transport properties in itinerant magnets. Prominent examples of such SOC-based phenomena are anomalous and topological Hall effects. However, controlling them by electric field has remained unachieved since electric field tends to be screened in itinerant magnets. Here we demonstrate that both anomalous and topological Hall effects can be modulated by electric field in oxide heterostructures consisting of ferromagnetic SrRuO$_{3}$ and nonmagnetic SrIrO$_{3}$. We observed clear electric-field effect only when SrIrO$_{3}$ is inserted between SrRuO$_{3}$ and a gate dielectric. Our results establish that strong SOC of nonmagnetic materials such as SrIrO$_{3}$ is essential in electrical tuning of these Hall effects and possibly other SOC-related phenomena. △ Less

Submitted 18 January, 2018; originally announced January 2018.

Comments: 23 pages, 4 figures; revised version has been published in Nat. Commun. 9, 213 (2018)

Journal ref: Nat. Commun. 9, 213 (2018)

Quantum Hall states observed in thin films of Dirac semimetal Cd3As2

Authors: Masaki Uchida, Yusuke Nakazawa, Shinichi Nishihaya, Kazuto Akiba, Markus Kriener, Yusuke Kozuka, Atsushi Miyake, Yasujiro Taguchi, Masashi Tokunaga, Naoto Nagaosa, Yoshinori Tokura, Masashi Kawasaki

Abstract: A well known semiconductor Cd3As2 has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd3As2 thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 fi… ▽ More A well known semiconductor Cd3As2 has reentered the spotlight due to its unique electronic structure and quantum transport phenomena as a topological Dirac semimetal. For elucidating and controlling its topological quantum state, high-quality Cd3As2 thin films have been highly desired. Here we report the development of an elaborate growth technique of high-crystallinity and high-mobility Cd3As2 films with controlled thicknesses and the observation of quantum Hall effect dependent on the film thickness. With decreasing the film thickness to 10 nm, the quantum Hall states exhibit variations such as a change in the spin degeneracy reflecting the Dirac dispersion with a large Fermi velocity. Details of the electronic structure including subband splitting and gap opening are identified from the quantum transport depending on the confinement thickness, suggesting the presence of a two-dimensional topological insulating phase. The demonstration of quantum Hall states in our high-quality Cd3As2 films paves a road to study quantum transport and device application in topological Dirac semimetal and its derivative phases. △ Less

Submitted 26 December, 2017; originally announced December 2017.

Comments: 24 pages, 4 figures + supplementary 13 pages, 13 figures

Journal ref: Nature Communications 8, 2274 (2017)

Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias

Authors: Q. Shi, M. A. Zudov, J. Falson, Y. Kozuka, A. Tsukazaki, M. Kawasaki, J. Smet

Abstract: We report on magnetotransport properties of a MgZnO/ZnO heterostructure subjected to weak direct currents. We find that in the regime of overlapping Landau levels, the differential resistivity acquires a quantum correction proportional to both the square of the current and the Dingle factor. The analysis shows that the correction to the differential resistivity is dominated by a current-induced mo… ▽ More We report on magnetotransport properties of a MgZnO/ZnO heterostructure subjected to weak direct currents. We find that in the regime of overlapping Landau levels, the differential resistivity acquires a quantum correction proportional to both the square of the current and the Dingle factor. The analysis shows that the correction to the differential resistivity is dominated by a current-induced modification of the electron distribution function and allows us to access both quantum and inelastic scattering rates. △ Less

Submitted 31 August, 2017; originally announced August 2017.

Comments: 4 pages, 3 figures

Phase transition from a composite fermion liquid to a Wigner solid in the lowest Landau level of ZnO

Authors: D. Maryenko, A. McCollam, J. Falson, Y. Kozuka, J. Bruin, U. Zeitler, M. Kawasaki

Abstract: Interactions between the constituents of a condensed matter system can drive it through a plethora of different phases due to many-body effects. A prominent platform for this type of behavior is a two-dimensional electron system in a magnetic field, which evolves intricately through various gaseous, liquid and solids phases governed by Coulomb interaction. Here we report on the experimental observ… ▽ More Interactions between the constituents of a condensed matter system can drive it through a plethora of different phases due to many-body effects. A prominent platform for this type of behavior is a two-dimensional electron system in a magnetic field, which evolves intricately through various gaseous, liquid and solids phases governed by Coulomb interaction. Here we report on the experimental observation of a phase transition between the Laughlin liquid of composite fermions and the adjacent insulating phase of a magnetic field-induced Wigner solid. The experiments are performed in the lowest Landau level of a MgZnO/ZnO two-dimensional electron system with attributes of both a liquid and a solid. An in-plane magnetic field component applied on top of the perpendicular magnetic field extends the Wigner phase further into the liquid phase region. Our observations indicate the direct competition between a Wigner solid and a Laughlin liquid both formed by composite particles rather than bare electrons. △ Less

Submitted 26 July, 2017; originally announced July 2017.

Comments: 11 pages, 4 figures, Supplementary Information available upon request

Hall field-induced resistance oscillations in MgZnO/ZnO heterostructures

Authors: Q. Shi, M. A. Zudov, J. Falson, Y. Kozuka, A. Tsukazaki, M. Kawasaki, K. von Klitzing, J. Smet

Abstract: We report on nonlinear magnetotransport in a two-dimensional electron gas hosted in a MgZnO/ZnO heterostructure. Upon application of a direct current, we observe pronounced Hall field-induced resistance oscillations (HIRO) which are well known from experiments on high-mobility GaAs/AlGaAs quantum wells. The unique sensitivity of HIRO to the short-range component of the disorder potential allows us… ▽ More We report on nonlinear magnetotransport in a two-dimensional electron gas hosted in a MgZnO/ZnO heterostructure. Upon application of a direct current, we observe pronounced Hall field-induced resistance oscillations (HIRO) which are well known from experiments on high-mobility GaAs/AlGaAs quantum wells. The unique sensitivity of HIRO to the short-range component of the disorder potential allows us to unambiguously establish that the mobility of our MgZnO/ZnO heterostructure is limited by impurities residing within or near the 2D channel. Demonstration that HIRO can be realized in a system with a much lower mobility, much higher density, and much larger effective mass than in previously studied systems, highlights remarkable universality of the phenomenon and its great promise to be used in studies of a wide variety of emerging 2D materials. △ Less

Submitted 8 February, 2017; originally announced February 2017.

Journal ref: Phys. Rev. B 95, 041411(R) (2017)

Evolution of Insulator-Metal Phase Transitions in Epitaxial Tungsten Oxide Films during Electrolyte-Gating

Authors: Shinichi Nishihaya, Masaki Uchida, Yusuke Kozuka, Yoshihiro Iwasa, Masashi Kawasaki

Abstract: An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we directly compare typical device operations of those in electric double layer transistor geometry by adopting ${A}$-site vacant perovskite WO$_3$ epitaxial thin film… ▽ More An interface between an oxide and an electrolyte gives rise to various processes as exemplified by electrostatic charge accumulation/depletion and electrochemical reactions such as intercalation/decalation under electric field. Here we directly compare typical device operations of those in electric double layer transistor geometry by adopting ${A}$-site vacant perovskite WO$_3$ epitaxial thin films as a channel material and two different electrolytes as gating agent. $\textit{In situ}$ measurements of x-ray diffraction and channel resistance performed during the gating revealed that in both the cases WO$_3$ thin film reaches a new metallic state through multiple phase transitions, accompanied by the change in out-of-plane lattice constant. Electrons are electrostatically accumulated from the interface side with an ionic liquid, while alkaline metal ions are more uniformly intercalated into the film with a polymer electrolyte. We systematically demonstrate this difference in the electrostatic and electrochemical processes, by comparing doped carrier density, lattice deformation behavior, and time constant of the phase transitions. △ Less

Submitted 10 August, 2016; originally announced August 2016.

Comments: 25 pages, 6 figures, ACS Applied Matter. in press

Epitaxially Stabilized Oxide Composed of Twisted Triangular-Lattice Layers

Authors: M. Uchida, K. Ohba, Y. Ohuchi, Y. Kozuka, M. Kawasaki

Abstract: Layered oxides have been intensively studied due to their high designability for various electronic functions. Here we synthesize a new oxide as epitaxial thin film form by pulsed laser deposition. Film characterizations including cross-section and plan-view transmission electron microscopy confirm that the film is composed of twisted stack of triangular-lattice Rh and Bi layers. We foresee that t… ▽ More Layered oxides have been intensively studied due to their high designability for various electronic functions. Here we synthesize a new oxide as epitaxial thin film form by pulsed laser deposition. Film characterizations including cross-section and plan-view transmission electron microscopy confirm that the film is composed of twisted stack of triangular-lattice Rh and Bi layers. We foresee that the concept of twisted oxide layers will open up a new route to design further functional layered oxides. △ Less

Submitted 25 February, 2016; originally announced February 2016.

Comments: 5 pages, 4 figures

Journal ref: Chem. Mater. 28, 1165 (2016)

All-in-all-out magnetic domain wall conduction in pyrochlore iridate heterointerface

Authors: T. C. Fujita, M. Uchida, Y. Kozuka, W. Sano, A. Tsukazaki, T. Arima, M. Kawasaki

Abstract: Pyrochlore oxides possessing "all-in-all-out" spin ordering have attracted burgeoning interest as a rich ground of emergent states. This ordering has two distinct types of magnetic domains (all-in-all-out or all-out-all-in) with broken time-reversal symmetry, and a non-trivial metallic surface state has been theoretically demonstrated to appear at their domain wall. Here, we report on observation… ▽ More Pyrochlore oxides possessing "all-in-all-out" spin ordering have attracted burgeoning interest as a rich ground of emergent states. This ordering has two distinct types of magnetic domains (all-in-all-out or all-out-all-in) with broken time-reversal symmetry, and a non-trivial metallic surface state has been theoretically demonstrated to appear at their domain wall. Here, we report on observation of this metallic conduction at the single all-in-all-out/all-out-all-in magnetic domain wall formed at the heterointerface of two pyrochlore iridates. By utilizing different magnetoresponses of them with different lanthanide ions, the domain wall is controllably inserted at the heterointerface, the surface state being detected as anomalous conduction enhancement with a ferroic hysteresis. Our establishment paves the way for further investigation and manipulation of this new type of surface transport. △ Less

Submitted 1 February, 2016; originally announced February 2016.

Comments: 23 pages, 7 figures

Journal ref: Phys. Rev. B 93, 064419 (2016)

Effective Carrier Doping and Metallization in LaxSr2-x-yBayIrO4-delta Thin Films

Authors: M. Ito, M. Uchida, Y. Kozuka, K. S. Takahashi, M. Kawasaki

Abstract: We fabricate LaxSr2-x-yBayIrO4-delta thin films by pulsed laser deposition, in an effort to realize the effective carrier doping and metallization in the Sr2IrO4 system. We design ideal in-plane Ir-O-Ir frame structure by utilizing tensile substrate strain and Ba substitution, as well as control La doping and oxygen deficiency. This enables us to elucidate relation between the charge transport and… ▽ More We fabricate LaxSr2-x-yBayIrO4-delta thin films by pulsed laser deposition, in an effort to realize the effective carrier doping and metallization in the Sr2IrO4 system. We design ideal in-plane Ir-O-Ir frame structure by utilizing tensile substrate strain and Ba substitution, as well as control La doping and oxygen deficiency. This enables us to elucidate relation between the charge transport and the carrier density through systematic changes from original p-type spin-orbit Mott insulator to highly doped n-type metal. △ Less

Submitted 28 January, 2016; originally announced January 2016.

Comments: 6 pages, 7 figures

Journal ref: Phys. Rev. B 93, 045139 (2016)

All-in-all-out magnetic domain size in pyrochlore iridate thin films as probed by local magnetotransport

Authors: T. C. Fujita, M. Uchida, Y. Kozuka, S. Ogawa, A. Tsukazaki, T. Arima, M. Kawasaki

Abstract: Pyrochlore iridates have attracted growing attention because of a theoretical prediction of a possible topological semimetal phase originating from all-in-all-out spin ordering. Related to the topological band structure, recent findings of the magnetic domain wall conduction have stimulated investigations of magnetic domain distribution in this system. Here, we investigate the size of magnetic dom… ▽ More Pyrochlore iridates have attracted growing attention because of a theoretical prediction of a possible topological semimetal phase originating from all-in-all-out spin ordering. Related to the topological band structure, recent findings of the magnetic domain wall conduction have stimulated investigations of magnetic domain distribution in this system. Here, we investigate the size of magnetic domains in Eu$_2$Ir$_2$O$_7$ single crystalline thin films by magnetoresistance (MR) using microscale Hall bars. Two distinct magnetic domains of the all-in-all-out spin structure are known to exhibit linear MR but with opposite signs, which enables us to estimate the ratio of the two domains in the patterned channel. The linear MR for 80 ${\times}$ 60 $μ$m$^2$ channel is nearly zero after zero-field cooling, suggesting random distribution of domains smaller than the channel size. In contrast, the wide distribution of the value of the linear MR is detected in 2 ${\times}$ 2 $μ$m$^2$ channel, reflecting the detectable domain size depending on each cooling-cycle. Compared to simulation results, we estimate the average size of a single all-in-all-out magnetic domain as 1-2 $μ$m. △ Less

Submitted 12 January, 2016; v1 submitted 11 January, 2016; originally announced January 2016.

Comments: 16 pages, 3 figures

Journal ref: Appl. Phys. Lett. 108, 022402 (2016)

Magnetic modulation doping in topological insulators toward higher-temperature quantum anomalous Hall effect

Authors: M. Mogi, R. Yoshimi, A. Tsukazaki, K. Yasuda, Y. Kozuka, K. S. Takahashi, M. Kawasaki, Y. Tokura

Abstract: Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs), such as Cr- and V-doped (Bi,Sb)2Te3. The QAHE emerges when the Fermi level is inside the magnetically induced gap around the original Dirac point of the TI surface state. Although the size of gap is reported to be about… ▽ More Quantum anomalous Hall effect (QAHE), which generates dissipation-less edge current without external magnetic field, is observed in magnetic-ion doped topological insulators (TIs), such as Cr- and V-doped (Bi,Sb)2Te3. The QAHE emerges when the Fermi level is inside the magnetically induced gap around the original Dirac point of the TI surface state. Although the size of gap is reported to be about 50 meV, the observable temperature of QAHE has been limited below 300 mK. We attempt magnetic-Cr modulation doping into topological insulator (Bi,Sb)2Te3 films to increase the observable temperature of QAHE. By introducing the rich-Cr-doped thin (1 nm) layers at the vicinity of the both surfaces based on non-Cr-doped (Bi,Sb)2Te3 films, we have succeeded in observing the QAHE up to 2 K. The improvement in the observable temperature achieved by this modulation-doping appears to be originating from the suppression of the disorder in the surface state interacting with the rich magnetic moments. Such a superlattice designing of the stabilized QAHE may pave a way to dissipation-less electronics based on the highertemperature and zero magnetic-field quantum conduction. △ Less

Submitted 5 November, 2015; originally announced November 2015.

Comments: 14 pages, 4 figures

Journal ref: Appl. Phys. Lett. 107, 182401 (2015)

Thermal generation of spin current in an antiferromagnet

Authors: S. Seki, T. Ideue, M. Kubota, Y. Kozuka, R. Takagi, M. Nakamura, Y. Kaneko, M. Kawasaki, Y. Tokura

Abstract: Longitudinal spin Seebeck effect has been investigated for an uniaxial antiferromagnetic insulator Cr2O3, characterized by a spin-flop transition under magnetic field along the c-axis. We have found that temperature gradient applied normal to Cr2O3/Pt interface induces inverse spin Hall voltage of spin current origin in Pt, whose magnitude turns out to be always proportional to magnetization in Cr… ▽ More Longitudinal spin Seebeck effect has been investigated for an uniaxial antiferromagnetic insulator Cr2O3, characterized by a spin-flop transition under magnetic field along the c-axis. We have found that temperature gradient applied normal to Cr2O3/Pt interface induces inverse spin Hall voltage of spin current origin in Pt, whose magnitude turns out to be always proportional to magnetization in Cr2O3. The observed voltage shows significant enhancement for the lower temperature region, which can be ascribed to the phonon-drag effect on the relevant spin excitations. The above results establish that antiferromagnetic spin waves with high frequency above 100 GHz can be an effective carrier of spin current. △ Less

Submitted 11 August, 2015; originally announced August 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 115, 266601 (2015)

Odd-parity magnetoresistance in pyrochlore iridate thin films with broken time-reversal symmetry

Authors: T. C. Fujita, Y. Kozuka, M. Uchida, A. Tsukazaki, T. Arima, M. Kawasaki

Abstract: A new class of materials termed topological insulators have been intensively investigated due to their unique Dirac surface state carrying dissipationless edge spin currents. Recently, it has been theoretically proposed that the three dimensional analogue of this type of band structure, the Weyl Semimetal phase, is materialized in pyrochlore oxides with strong spin-orbit coupling, accompanied by a… ▽ More A new class of materials termed topological insulators have been intensively investigated due to their unique Dirac surface state carrying dissipationless edge spin currents. Recently, it has been theoretically proposed that the three dimensional analogue of this type of band structure, the Weyl Semimetal phase, is materialized in pyrochlore oxides with strong spin-orbit coupling, accompanied by all-in-all-out spin ordering. Here, we report on the fabrication and magnetotransport of Eu2Ir2O7 single crystalline thin films. We reveal that one of the two degenerate all-in-all-out domain structures, which are connected by time-reversal operation, can be selectively formed by the polarity of the cooling magnetic field. Once formed, the domain is robust against an oppositely polarised magnetic field, as evidenced by an unusual odd field dependent term in the magnetoresistance and an anomalous term in the Hall resistance. Our findings pave the way for exploring the predicted novel quantum transport phenomenon at the surfaces/interfaces or magnetic domain walls of pyrochlore iridates. △ Less

Submitted 6 August, 2015; originally announced August 2015.

Journal ref: Scientific Reports 5, 9711 (2015)

Field-direction control of the type of charge carriers in nonsymmorphic IrO2

Authors: M. Uchida, W. Sano, K. S. Takahashi, T. Koretsune, Y. Kozuka, R. Arita, Y. Tokura, M. Kawasaki

Abstract: In the quest for switching of the charge carrier type in conductive materials, we focus on nonsymmorphic crystals, which are expected to have highly anisotropic folded Fermi surfaces due to the symmetry requirements. Following simple tight-binding model simulation, we prepare nonsymmorphic IrO2 single-crystalline films with various growth orientations by molecular beam epitaxy, and systematically… ▽ More In the quest for switching of the charge carrier type in conductive materials, we focus on nonsymmorphic crystals, which are expected to have highly anisotropic folded Fermi surfaces due to the symmetry requirements. Following simple tight-binding model simulation, we prepare nonsymmorphic IrO2 single-crystalline films with various growth orientations by molecular beam epitaxy, and systematically quantify their Hall effect for the corresponding field directions. The results clearly demonstrate that the dominant carrier type can be intrinsically controlled by the magnetic field direction, as also evidenced by first-principles calculations revealing nontrivial momentum dependence of the group velocity and mass tensor on the folded Fermi surfaces and its anisotropic nature for the field direction. △ Less

Submitted 2 July, 2015; originally announced July 2015.

Comments: 12 pages, 4 figures

Journal ref: Phys. Rev. B 91, 241119(R) (2015)

Formation of In-plane Skyrmions in Epitaxial MnSi Thin Films as Revealed by Planar Hall Effect

Authors: T. Yokouchi, N. Kanazawa, A. Tsukazaki, Y. Kozuka, A. Kikkawa, Y. Taguchi, M. Kawasaki, M. Ichikawa, F. Kagawa, Y. Tokura

Abstract: We investigate skyrmion formation in both a single crystalline bulk and epitaxial thin films of MnSi by measurements of planar Hall effect. A prominent stepwise field profile of planar Hall effect is observed in the well-established skyrmion phase region in the bulk sample, which is assigned to anisotropic magnetoresistance effect with respect to the magnetic modulation direction. We also detect t… ▽ More We investigate skyrmion formation in both a single crystalline bulk and epitaxial thin films of MnSi by measurements of planar Hall effect. A prominent stepwise field profile of planar Hall effect is observed in the well-established skyrmion phase region in the bulk sample, which is assigned to anisotropic magnetoresistance effect with respect to the magnetic modulation direction. We also detect the characteristic planar Hall anomalies in the thin films under the in-plane magnetic field at low temperatures, which indicates the formation of skyrmion strings lying in the film plane. Uniaxial magnetic anisotropy plays an important role in stabilizing the in-plane skyrmions in the MnSi thin film. △ Less

Submitted 15 June, 2015; originally announced June 2015.

Comments: 12 pages, 6 figures

Discretized Topological Hall Effect Emerging from Skyrmions in Constricted Geometry

Authors: N. Kanazawa, M. Kubota, A. Tsukazaki, Y. Kozuka, K. S. Takahashi, M. Kawasaki, M. Ichikawa, F. Kagawa, Y. Tokura

Abstract: We investigate the skyrmion formation process in nano-structured FeGe Hall-bar devices by measurements of topological Hall effect, which extracts the winding number of a spin texture as an emergent magnetic field. Step-wise profiles of topological Hall resistivity are observed in the course of varying the applied magnetic field, which arise from instantaneous changes in the magnetic nano-structure… ▽ More We investigate the skyrmion formation process in nano-structured FeGe Hall-bar devices by measurements of topological Hall effect, which extracts the winding number of a spin texture as an emergent magnetic field. Step-wise profiles of topological Hall resistivity are observed in the course of varying the applied magnetic field, which arise from instantaneous changes in the magnetic nano-structure such as creation, annihilation, and jittering motion of skyrmions. The discrete changes in topological Hall resistivity demonstrate the quantized nature of emergent magnetic flux inherent in each skyrmion, which had been indistinguishable in many-skyrmion systems on a macroscopic scale. △ Less

Submitted 14 January, 2015; originally announced January 2015.

Polarization dependent Landau level crossing in a two-dimensional electron system in MgZnO/ZnO-heterostructure

Authors: D. Maryenko, J. Falson, Y. Kozuka, A. Tsukazaki, M. Kawasaki

Abstract: We report electrical transport measurements in a tilted magnetic field on a high-mobility two-dimensional electron system confined at the MgZnO/ZnO heterointerface. The observation of multiple crossing events of spin-resolved Landau levels (LLs) enables the mapping of the sequence of electronic states. We further measure the renormalization of electron spin susceptibility at zero field and the sus… ▽ More We report electrical transport measurements in a tilted magnetic field on a high-mobility two-dimensional electron system confined at the MgZnO/ZnO heterointerface. The observation of multiple crossing events of spin-resolved Landau levels (LLs) enables the mapping of the sequence of electronic states. We further measure the renormalization of electron spin susceptibility at zero field and the susceptibility dependence on the electron spin polarization. The latter manifests the deviation from the Pauli spin susceptibility. As the result, the crossing of spin-resolved LLs shifts to smaller tilt angles and the first Landau level coincidence event is absent even when the magnetic field has only a perpendicular component to the 2DES plane. △ Less

Submitted 21 October, 2014; v1 submitted 27 September, 2014; originally announced September 2014.

Comments: 5 pages, 4 figures

Quantum Hall Effect on Top and Bottom Surface States of Topological Insulator (Bi1-xSbx)2Te3 Films

Authors: R. Yoshimi, A. Tsukazaki, Y. Kozuka, J. Falson, K. S. Takahashi, J. G. Checkelsky, N. Nagaosa, M. Kawasaki, Y. Tokura

Abstract: The three-dimensional (3D) topological insulator (TI) is a novel state of matter as characterized by two-dimensional (2D) metallic Dirac states on its surface. Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds like Bi2Se2Te and (Bi1-xSbx)2Te3 are typical members of 3D-TIs which have been intensively studied in forms of bulk single crystals and thin films to v… ▽ More The three-dimensional (3D) topological insulator (TI) is a novel state of matter as characterized by two-dimensional (2D) metallic Dirac states on its surface. Bi-based chalcogenides such as Bi2Se3, Bi2Te3, Sb2Te3 and their combined/mixed compounds like Bi2Se2Te and (Bi1-xSbx)2Te3 are typical members of 3D-TIs which have been intensively studied in forms of bulk single crystals and thin films to verify the topological nature of the surface states. Here, we report the realization of the Quantum Hall effect (QHE) on the surface Dirac states in (Bi1-xSbx)2Te3 films (x = 0.84 and 0.88). With electrostatic gate-tuning of the Fermi level in the bulk band gap under magnetic fields, the quantum Hall states with filling factor ν= \pm 1 are resolved with quantized Hall resistance of Ryx = h/e2 and zero longitudinal resistance, owing to chiral edge modes at top/bottom surface Dirac states. Furthermore, the appearance of a ν= 0 state (σxy = 0) reflects a pseudo-spin Hall insulator state when the Fermi level is tuned in between the energy levels of the non-degenerate top and bottom surface Dirac points. The observation of the QHE in 3D TI films may pave a way toward TI-based electronics. △ Less

Submitted 11 September, 2014; originally announced September 2014.

Trajectory of Anomalous Hall Effect toward the Quantized State in a Ferromagnetic Topological Insulator

Authors: J. G. Checkelsky, R. Yoshimi, A. Tsukazaki, K. S. Takahashi, Y. Kozuka, J. Falson, M. Kawasaki, Y. Tokura

Abstract: Topological insulators are bulk electronic insulators which possess symmetry protected gapless modes on their surfaces. Breaking the symmetries that underlie the gapless nature of the surface modes is predicted to give rise to exotic new states of matter. In particular, it has recently been predicted and shown that breaking of time reversal symmetry in the form of ferromagnetism can give rise to a… ▽ More Topological insulators are bulk electronic insulators which possess symmetry protected gapless modes on their surfaces. Breaking the symmetries that underlie the gapless nature of the surface modes is predicted to give rise to exotic new states of matter. In particular, it has recently been predicted and shown that breaking of time reversal symmetry in the form of ferromagnetism can give rise to a gapped state characterized by a zero magnetic field quantized Hall response and dissipationless longitudinal transport known as the Quantum Anomalous Hall (QAH) state. A key question that has thus far remained experimentally unexplored is the relationship of this new type of quantum Hall state with the previously known orbitally driven quantum Hall states. Here, we show experimentally that a ferromagnetic topological insulator exhibiting the QAH state is well described by the global phase diagram of the quantum Hall effect. By mapping the behavior of the conductivity tensor in the parameter space of temperature, magnetic field, and chemical potential in the vicinity of the QAH phase, we find evidence for quantum criticality and delocalization behavior that can quantitatively be described by the renormalization group properties of the quantum Hall ground state. This result demonstrates that the QAH state observed in ferromagnetic topological insulators can be understood within the context of the law of corresponding states which governs the quantum Hall state. This suggests a roadmap for studying the QAH effect including transitions to possible adjacent topologically non-trivial states and a possible universality class for the QAH transition. △ Less

Submitted 28 June, 2014; originally announced June 2014.

Comments: Nature Physics, forthcoming. 15 pages, 4 figures

Journal ref: Nature Physics 10, 731-736 (2014)

Challenges and opportunities of ZnO-related single crystalline heterostructures

Authors: Y. Kozuka, A. Tsukazaki, M. Kawasaki

Abstract: Recent technological advancement in ZnO heterostructures has expanded the possibility of device functionalities to various kinds of applications. In order to extract novel device functionalities in the heterostructures, one needs to fabricate high quality films and interfaces with minimal impurities, defects, and disorder. With employing molecular-beam epitaxy (MBE) and single crystal ZnO substrat… ▽ More Recent technological advancement in ZnO heterostructures has expanded the possibility of device functionalities to various kinds of applications. In order to extract novel device functionalities in the heterostructures, one needs to fabricate high quality films and interfaces with minimal impurities, defects, and disorder. With employing molecular-beam epitaxy (MBE) and single crystal ZnO substrates, the density of residual impurities and defects can be drastically reduced and the optical and electrical properties have been dramatically improved for the ZnO films and heterostructures with MgxZn1-xO. Here, we overview such recent technological advancement from various aspects of application. Towards optoelectronic devices such as a light emitter and a photodetector in an ultraviolet region, the development of p-type ZnO and the fabrication of excellent Schottky contact, respectively, have been subjected to intensive studies for years. For the former, the fine tuning of the growth conditions to make MgxZn1-xO as intrinsic as possible has opened the possibilities of making p-type MgxZn1-xO through NH3 doping method. For the latter, conducting and transparent polymer films spin-coated on MgxZn1-xO was shown to give almost ideal Schottky junctions. The wavelength-selective detection can be realized with varying the Mg content. From the viewpoint of electronic devices, two-dimensional electrons confined at the MgxZn1-xO/ZnO interfaces are promising candidate for quantum devices because of high electron mobility and strong electron-electron correlation effect. These wonderful features and tremendous opportunities in ZnO-based heterostructures make this system unique and promising in oxide electronics and will lead to new quantum functionalities in optoelectronic devices and electronic applications with lower energy consumption and high performance. △ Less

Submitted 20 November, 2013; originally announced November 2013.

Comments: 54 pages, 22 figures

Journal ref: Appl. Phys. Rev. 1, 011303 (2014)

Enhanced quantum oscillatory magnetization and non-equilibrium currents in an interacting two-dimensional electron system in MgZnO/ZnO with repulsive scatterers

Authors: M. Brasse, S. M. Sauther, J. Falson, Y. Kozuka, A. Tsukazaki, Ch. Heyn, M. A. Wilde, M. Kawasaki, D. Grundler

Abstract: Torque magnetometry at low temperature and in high magnetic fields B is performed on a MgZnO/ZnO heterostructure incorporating a high-mobility two-dimensional electron system. We find a sawtooth-like quantum oscillatory magnetization M(B), i.e., the de Haas-van Alphen (dHvA) effect. At the same time, unexpected spike-like overshoots in M and non-equilibrium currents are observed which allow us to… ▽ More Torque magnetometry at low temperature and in high magnetic fields B is performed on a MgZnO/ZnO heterostructure incorporating a high-mobility two-dimensional electron system. We find a sawtooth-like quantum oscillatory magnetization M(B), i.e., the de Haas-van Alphen (dHvA) effect. At the same time, unexpected spike-like overshoots in M and non-equilibrium currents are observed which allow us to identify the microscopic nature and density of the residual disorder. The acceptor-like scatterers give rise to a magnetic thaw down effect which enhances the dHvA amplitude beyond the electron-electron interaction effects being present in the MgZnO/ZnO heterostructure △ Less

Submitted 12 July, 2013; originally announced July 2013.

Journal ref: Physical Review B, Vol.89, No.7, 2014

Epitaxially Stabilized EuMoO3: A New Itinerant Ferromagnet

Authors: Yusuke Kozuka, Hidenobu Seki, Takahiro C. Fujita, Suvankar Chakraverty, Kohei Yoshimatsu, Hiroshi Kumigashira, Masaharu Oshima, Mohammad S. Bahramy, Ryotaro Arita, Masashi Kawasaki

Abstract: Synthesizing metastable phase often opens new functions in materials but is a challenging topic. Thin film techniques have advantages to form materials which do not exist in nature since nonequilibrium processes are frequently utilized. In this study, we successfully synthesize epitaxially stabilized new compound of perovskite Eu2+Mo4+O3 as a thin film form by a pulsed laser deposition. Analogous… ▽ More Synthesizing metastable phase often opens new functions in materials but is a challenging topic. Thin film techniques have advantages to form materials which do not exist in nature since nonequilibrium processes are frequently utilized. In this study, we successfully synthesize epitaxially stabilized new compound of perovskite Eu2+Mo4+O3 as a thin film form by a pulsed laser deposition. Analogous perovskite SrMoO3 is a highly conducting paramagnetic material, but Eu2+ and Mo4+ are not compatible in equilibrium and previous study found more stable pyrochlore Eu23+Mo24+O7 prefers to form. By using isostructural perovskite substrates, the gain of the interface energy between the film and the substrate stabilizes the matastable EuMoO3 phase. This compound exhibits high conductivity and large magnetic moment, originating from Mo 4d2 electrons and Eu 4f7 electrons, respectively. Our result indi-cates the epitaxial stabilization is effective not only to stabilize crystallographic structures but also to from a new compound which contains unstable combinations of ionic valences in bulk form. △ Less

Submitted 10 September, 2012; originally announced September 2012.

Comments: 7 pages, 9 figures

Precise calibration of Mg concentration in MgxZn1-xO thin films grown on ZnO substrates

Authors: Y. Kozuka, J. Falson, Y. Segawa, T. Makino, A. Tsukazaki, M. Kawasaki

Abstract: The growth techniques for MgxZn1-xO thin films have advanced at a rapid pace in recent years, enabling the application of this material to a wide range of optical and electrical applications. In designing structures and optimizing device performances, it is crucial that the Mg content of the alloy be controllable and precisely determined. In this study, we have established laboratory-based methods… ▽ More The growth techniques for MgxZn1-xO thin films have advanced at a rapid pace in recent years, enabling the application of this material to a wide range of optical and electrical applications. In designing structures and optimizing device performances, it is crucial that the Mg content of the alloy be controllable and precisely determined. In this study, we have established laboratory-based methods to determine the Mg content of MgxZn1-xO thin films grown on ZnO substrates, ranging from the solubility limit of x ~ 0.4 to the dilute limit of x < 0.01. For the absolute determination of Mg content, Rutherford backscattering spectroscopy is used for the high Mg region above x = 0.14, while secondary ion mass spectroscopy is employed to quantify low Mg content. As a lab-based method to determine the Mg content, c-axis length is measured by X-ray diffraction and is well associated with Mg content. The interpolation enables the determination of Mg content to x = 0.023, where the peak from the ZnO substrate overlaps the MgxZn1-xO peak in standard laboratory equipment, and thus quantitative determination. At dilute Mg contents below x = 0.023, the localized exciton peak energy of the MgxZn1-xO films as measured by photoluminescence is found to show a linear Mg content dependence, which is well resolved from the free exciton peak of ZnO substrate down to x = 0.0043. Our results demonstrate that X-ray diffraction and photoluminescence in combination are appropriate methods to determine Mg content in a wide Mg range from x = 0.004 to 0.40 in a laboratory environment. △ Less

Submitted 9 August, 2012; originally announced August 2012.

Comments: 21 pages, 1 table, 7 figures

Ultrafast optical control of magnetization in EuO thin films

Authors: T. Makino, F. Liu, T. Yamasaki, Y. Kozuka, K. Ueno, A. Tsukazaki, T. Fukumura, Y. Kong, M. Kawasaki

Abstract: All-optical pump-probe detection of magnetization precession has been performed for ferromagnetic EuO thin films at 10 K. We demonstrate that the circularly-polarized light can be used to control the magnetization precession on an ultrafast time scale. This takes place within the 100 fs duration of a single laser pulse, through combined contribution from two nonthermal photomagnetic effects, i.e.,… ▽ More All-optical pump-probe detection of magnetization precession has been performed for ferromagnetic EuO thin films at 10 K. We demonstrate that the circularly-polarized light can be used to control the magnetization precession on an ultrafast time scale. This takes place within the 100 fs duration of a single laser pulse, through combined contribution from two nonthermal photomagnetic effects, i.e., enhancement of the magnetization and an inverse Faraday effect. From the magnetic field dependences of the frequency and the Gilbert damping parameter, the intrinsic Gilbert damping coefficient is evaluated to be α \approx 3\times10^-3. △ Less

Submitted 28 July, 2012; originally announced July 2012.

Comments: 5 pages, 3 figures, accepted for publication in Phys. Rev. B

Temperature dependent magnetotransport around $ν$= 1/2 in ZnO heterostructures

Authors: Denis Maryenko, Joseph Falson, Yusuke Kozuka, Atsushi Tsukazaki, Masaru Onoda, Hideo Aoki, Masashi Kawasaki

Abstract: The sequence of prominent fractional quantum Hall states up to $ν$=5/11 around $ν$=1/2 in a high mobility two-dimensional electron system confined at oxide heterointerface (ZnO) is analyzed in terms of the composite fermion model. The temperature dependence of $\Rxx$ oscillations around $ν$=1/2 yields an estimation of the composite fermion effective mass, which increases linearly with the magnetic… ▽ More The sequence of prominent fractional quantum Hall states up to $ν$=5/11 around $ν$=1/2 in a high mobility two-dimensional electron system confined at oxide heterointerface (ZnO) is analyzed in terms of the composite fermion model. The temperature dependence of $\Rxx$ oscillations around $ν$=1/2 yields an estimation of the composite fermion effective mass, which increases linearly with the magnetic field. This mass is of similar value to an enhanced electron effective mass, which in itself arises from strong electron interaction. The energy gaps of fractional states and the temperature dependence of $\Rxx$ at $ν$=1/2 point to large residual interactions between composite fermions. △ Less

Submitted 15 March, 2012; originally announced March 2012.

Comments: 5 pages, 4 Figures

Common Origin of the Circular-dichroism Pattern in ARPES of SrTiO3 and CuxBi2Se3

Authors: Y. Ishida, H. Kanto, A. Kikkawa, Y. Taguchi, Y. Ito, Y. Ota, K. Okazaki, W. Malaeb, M. Mulazzi, M. Okawa, S. Watanabe, C. -T. Chen, M. Kim, C. Bell, Y. Kozuka, H. Y. Hwang, Y. Tokura, S. Shin

Abstract: Circular dichroism in the angular distribution (CDAD) of photoelectrons from SrTiO3:Nb and CuxBi2Se3 is investigated by 7-eV laser ARPES. In addition to the well-known node that occurs in CDAD when the incidence plane matches the mirror plane of the crystal, we show that another type of node occurs when the mirror plane of the crystal is vertical to the incidence plane and the electronic state is… ▽ More Circular dichroism in the angular distribution (CDAD) of photoelectrons from SrTiO3:Nb and CuxBi2Se3 is investigated by 7-eV laser ARPES. In addition to the well-known node that occurs in CDAD when the incidence plane matches the mirror plane of the crystal, we show that another type of node occurs when the mirror plane of the crystal is vertical to the incidence plane and the electronic state is two dimensional. The flower-shaped CDAD's occurring around the Fermi level of SrTiO3:Nb and around the Dirac point of CuxBi2Se3 are explained on equal footings. We point out that the penetration depth of the topological states of CuxBi2Se3 depends on momentum. △ Less

Submitted 22 August, 2011; originally announced August 2011.

Journal ref: Phys. Rev. Lett. 107, 077601 (2011)

Insulating phase of a two-dimensional electron gas in MgZnO/ZnO heterostructure below nu = 1/3

Authors: Y. Kozuka, A. Tsukazaki, D. Maryenko, J. Falson, S. Akasaka, K. Nakahara, S. Nakamura, S. Awaji, K. Ueno, M. Kawasaki

Abstract: We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO heterointerface in a high magnetic field up to 26 T. High electron mobility and low charge carrier density enabled the observation of the fractional quantum Hall state nu = 1/3. For an even lower charge carrier density, we observe a transition from quantum Hall liquid to an insulator below the filling fac… ▽ More We report magnetotransport properties of a two-dimensional electron gas confined at MgZnO/ZnO heterointerface in a high magnetic field up to 26 T. High electron mobility and low charge carrier density enabled the observation of the fractional quantum Hall state nu = 1/3. For an even lower charge carrier density, we observe a transition from quantum Hall liquid to an insulator below the filling factor 1/3. Because of the large electron effective mass in ZnO, we suggest the MgZnO/ZnO heterostructure to be a prototype system for highly correlated quantum Hall physics. △ Less

Submitted 28 June, 2011; originally announced June 2011.

Comments: 17 pages, 3 figures

Intrinsic spin-orbit coupling in superconducting δ-doped SrTiO3 heterostructures

Authors: M. Kim, Y. Kozuka, C. Bell, Y. Hikita, H. Y. Hwang

Abstract: We report the violation of the Pauli limit due to intrinsic spin-orbit coupling in SrTiO3 heterostructures. Via selective doping down to a few nanometers, a two-dimensional superconductor is formed, geometrically suppressing orbital pair-breaking. The spin-orbit scattering is exposed by the robust in-plane superconducting upper critical field, exceeding the Pauli limit by a factor of 4. Transport… ▽ More We report the violation of the Pauli limit due to intrinsic spin-orbit coupling in SrTiO3 heterostructures. Via selective doping down to a few nanometers, a two-dimensional superconductor is formed, geometrically suppressing orbital pair-breaking. The spin-orbit scattering is exposed by the robust in-plane superconducting upper critical field, exceeding the Pauli limit by a factor of 4. Transport scattering times several orders of magnitude higher than for conventional thin film superconductors enables a new regime to be entered, where spin-orbit coupling effects arise non-perturbatively. △ Less

Submitted 26 June, 2011; originally announced June 2011.

Comments: main text 4 pages with 4 figures, supplemental material 2 pages with 2 figure, submitted for publication