-
Good practice guide on the graphene-based AC-QHE realization of the farad
Authors:
Luca Callegaro,
Stephan Bauer,
Blaise Jeanneret,
Mattias Kruskopf,
Martina Marzano,
Massimo Ortolano,
Frederic Overney
Abstract:
This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabrication and characterization of graphene quantum Hall effect devices, the cryogenic environment required to achieve the quantization conditions, the digital impedance bridges and calibration procedures are reported.
The gu…
▽ More
This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabrication and characterization of graphene quantum Hall effect devices, the cryogenic environment required to achieve the quantization conditions, the digital impedance bridges and calibration procedures are reported.
The guide is a deliverable of the Joint Research Project EMPIR 18SIB07 GIQS: Graphene Impedance Quantum Standard. This project received funding from the European Metrology Programme for Innovation and Research (EMPIR) co-financed by the Participating States and from the European Unions' Horizon 2020 research and innovation programme. Funder ID: 10.13039/100014132 , Grant no: 18SIB07.
△ Less
Submitted 10 May, 2022;
originally announced May 2022.
-
Large-scale five- and seven-junction epitaxial graphene devices
Authors:
Dinesh Patel,
Martina Marzano,
Chieh-I Liu,
Heather M. Hill,
Mattias Kruskopf,
Hanbyul Jin,
Jiuning Hu,
David B. Newell,
Chi-Te Liang,
Randolph Elmquist,
Albert F. Rigosi
Abstract:
The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the form a/b R_H and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the anal…
▽ More
The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the form a/b R_H and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness.
△ Less
Submitted 26 March, 2022; v1 submitted 12 March, 2022;
originally announced March 2022.
-
Algorithms for determining resistances in quantum Hall annuli with p-n junctions
Authors:
Chieh-I Liu,
Dominick S. Scaletta,
Dinesh K. Patel,
Mattias Kruskopf,
Antonio Levy,
Heather M. Hill,
Albert F. Rigosi
Abstract:
Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is crucial, as seen in fields like resistance metrology, where graphene devices are required to accommodate currents of the order 100 μA to be compatible with existing in…
▽ More
Just a few of the promising applications of graphene Corbino pnJ devices include two-dimensional Dirac fermion microscopes, custom programmable quantized resistors, and mesoscopic valley filters. In some cases, device scalability is crucial, as seen in fields like resistance metrology, where graphene devices are required to accommodate currents of the order 100 μA to be compatible with existing infrastructure. However, fabrication of these devices still poses many difficulties. In this work, unusual quantized resistances are observed in epitaxial graphene Corbino p-n junction devices held at the i=2 plateau and agree with numerical simulations performed with the LTspice circuit simulator. The formulae describing experimental and simulated data are empirically derived for generalized placement of up to three current terminals and accurately reflects observed partial edge channel cancellation. These results support the use of ultraviolet lithography as a way to scale up graphene-based devices with suitably narrow junctions that could be applied in a variety of subfields
△ Less
Submitted 12 March, 2022;
originally announced March 2022.
-
Fabrication of quantum Hall p-n junction checkerboards
Authors:
Dinesh K. Patel,
Martina Marzano,
Chieh-I Liu,
Mattias Kruskopf,
Randolph E. Elmquist,
Chi-Te Liang,
Albert F. Rigosi
Abstract:
Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically…
▽ More
Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space within which these devices could operate. Moreover, these measurements suggest that the scalability of p-n junction fabrication on millimetre or centimetre scales is feasible with regards to graphene device manufacturing by using the far more efficient process of standard ultraviolet lithography.
△ Less
Submitted 12 March, 2022;
originally announced March 2022.
-
Quantum Hall $p-n$ Junction Dartboards Using Graphene Annuli
Authors:
Chieh-I Liu,
Dinesh K. Patel,
Martina Marzano,
Mattias Kruskopf,
Heather M. Hill,
Albert F. Rigosi
Abstract:
The use of multiple current terminals on millimeter-scale graphene $p-n$ junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled the measurement of several fractional multiples of the quantized Hall resistance at the $ν=2$ plateau ($R_H\approx 12906 Ω$). Experimentally obtained values agreed with corresponding numerical simulations performed with th…
▽ More
The use of multiple current terminals on millimeter-scale graphene $p-n$ junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled the measurement of several fractional multiples of the quantized Hall resistance at the $ν=2$ plateau ($R_H\approx 12906 Ω$). Experimentally obtained values agreed with corresponding numerical simulations performed with the LTspice circuit simulator. More complicated designs of the quantum Hall resistance dartboard were simulated to establish the potential parameter space within which these Corbino-type devices could output resistance. Most importantly, these measurements support simpler processes of ultraviolet lithography as a more efficient means of scaling up graphene-based device sizes while maintaining sufficiently narrow junctions.
△ Less
Submitted 24 January, 2022;
originally announced January 2022.
-
Nonconventional Quantized Hall Resistances Obtained with $ν= 2$ Equilibration in Epitaxial Graphene $p-n$ Junctions
Authors:
Albert F. Rigosi,
Dinesh Patel,
Martina Marzano,
Mattias Kruskopf,
Heather M. Hill,
Hanbyul Jin,
Jiuning Hu,
Angela R. Hight Walker,
Massimo Ortolano,
Luca Callegaro,
Chi-Te Liang,
David B. Newell
Abstract:
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantize…
▽ More
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at $ν=2$ ($R_H\approx 12906 Ω$) that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials.
△ Less
Submitted 24 January, 2022;
originally announced January 2022.
-
Algorithm for constructing customized quantized resistances in graphene $p-n$ junctions
Authors:
Albert F. Rigosi,
Martina Marzano,
Antonio Levy,
Heather M. Hill,
Dinesh K. Patel,
Mattias Kruskopf,
Hanbyul Jin,
Randolph E. Elmquist,
David B. Newell
Abstract:
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall resistance at the $ν=2$ plateau $R_H \approx 12906 Ω$ and take the form:…
▽ More
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall resistance at the $ν=2$ plateau $R_H \approx 12906 Ω$ and take the form: $\frac{a}{b}R_H$. This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene-based devices with multiple source and drain terminals.
△ Less
Submitted 20 January, 2022;
originally announced January 2022.
-
Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions
Authors:
Jiuning Hu,
Albert F. Rigosi,
Mattias Kruskopf,
Yanfei Yang,
Bi-Yi Wu,
Jifa Tian,
Alireza R. Panna,
Hsin-Yen Lee,
Shamith U. Payagala,
George R. Jones,
Marlin E. Kraft,
Dean G. Jarrett,
Kenji Watanabe,
Takashi Taniguchi,
Randolph E. Elmquist,
David B. Newell
Abstract:
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditio…
▽ More
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.
△ Less
Submitted 10 January, 2022;
originally announced January 2022.
-
Crystalline Formations of NbN/4H-SiC Heterostructure Interfaces
Authors:
Michael B. Katz,
Chieh-I Liu,
Albert F. Rigosi,
Mattias Kruskopf,
Angela Hight Walker,
Randolph E. Elmquist,
Albert V. Davydov
Abstract:
Given the importance of incorporating various superconducting materials to device fabrication or substrate development, studying the interface for possible interactions is warranted. In this work, NbN films sputter-deposited on 4H-SiC were heat-treated at 1400 C and 1870 C and were examined with transmission electron microscopy to assess whether the interfacial interactions undergo temperature-dep…
▽ More
Given the importance of incorporating various superconducting materials to device fabrication or substrate development, studying the interface for possible interactions is warranted. In this work, NbN films sputter-deposited on 4H-SiC were heat-treated at 1400 C and 1870 C and were examined with transmission electron microscopy to assess whether the interfacial interactions undergo temperature-dependent behavior. We report the diffusion of NbN into the SiC substrate and the formation of NbN nanocrystallites therein during the 1400 C treatment. After the 1870 C treatment, tiered porosity and the formation of voids are observed, likely due to catalytic reactions between the two materials and accelerated by the stresses induced by the differences in the materials' coefficients of thermal expansion. Lastly, Raman spectroscopy is employed to gain an understanding of the interface lattices' optical responses.
△ Less
Submitted 16 November, 2021;
originally announced November 2021.
-
Confocal laser scanning microscopy: A tool for rapid optical characterization of 2D materials
Authors:
Vishal Panchal,
Yanfei Yang,
Guangjun Cheng,
Jiuning Hu,
Mattias Kruskopf,
Chieh-I Liu,
Albert F. Rigosi,
Christos Melios,
Angela R. Hight Walker,
David B. Newell,
Olga Kazakova,
Randolph E. Elmquist
Abstract:
Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which can be applied in ambient air, does not require additional sample preparation, and is insusceptible to surface charging and surface contamination. CLSM leverages optical properties of graphene and provides greatly enhanc…
▽ More
Confocal laser scanning microscopy (CLSM) is a non-destructive, highly-efficient optical characterization method for large-area analysis of graphene on different substrates, which can be applied in ambient air, does not require additional sample preparation, and is insusceptible to surface charging and surface contamination. CLSM leverages optical properties of graphene and provides greatly enhanced optical contrast and mapping of thickness down to a single layer. We demonstrate the effectiveness of CLSM by measuring mechanically exfoliated and chemical vapor deposition graphene on Si/SiO2, and epitaxial graphene on SiC. In the case of graphene on Si/SiO2, both CLSM intensity and height mapping is powerful for analysis of 1-5 layers of graphene. For epitaxial graphene on SiC substrates, the CLSM intensity allows us to distinguish features such as dense, parallel 150 nm wide ribbons of graphene (associated with the early stages of the growth process) and large regions covered by the interfacial layer and 1-3 layers of graphene. In both cases, CLSM data shows excellent correlation with conventional optical microscopy, atomic force microscopy, Kelvin probe force microscopy, conductive atomic force microscopy, scanning electron microscopy and Raman mapping, with a greatly reduced acquisition time. We demonstrate that CLSM is an indispensable tool for rapid analysis of mass-produced graphene and is equally relevant to other 2D materials.
△ Less
Submitted 12 April, 2018;
originally announced April 2018.
-
Tailoring the SiC surface - a morphology study on the epitaxial growth of graphene and its buffer layer
Authors:
Mattias Kruskopf,
Klaus Pierz,
Davood Momeni Pakdehi,
Stefan Wundrack,
Rainer Stosch,
Andrey Bakin,
Hans W. Schumacher
Abstract:
We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in excellent agreement with the predictions of a general model of step dynamics. The applied polymer-assisted sublimation grow…
▽ More
We investigate the growth of the graphene buffer layer and the involved step bunching behavior of the silicon carbide substrate surface using atomic force microscopy. The formation of local buffer layer domains are identified to be the origin of undesirably high step edges in excellent agreement with the predictions of a general model of step dynamics. The applied polymer-assisted sublimation growth method demonstrates that the key principle to suppress this behavior is the uniform nucleation of the buffer layer. In this way, the silicon carbide surface is stabilized such that ultra-flat surfaces can be conserved during graphene growth on a large variety of silicon carbide substrate surfaces. The analysis of the experimental results describes different growth modes which extend the current understanding of epitaxial graphene growth by emphasizing the importance of buffer layer nucleation and critical mass transport processes.
△ Less
Submitted 10 July, 2017; v1 submitted 26 April, 2017;
originally announced April 2017.
-
Nonequilibrium mesoscopic conductance fluctuations as the origin of 1/f noise in epitaxial graphene
Authors:
Cay-Christian Kalmbach,
Franz Josef Ahlers,
Jürgen Schurr,
André Müller,
Juraj Feilhauer,
Mattias Kruskopf,
Klaus Pierz,
Frank Hohls,
Rolf J. Haug
Abstract:
We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, d…
▽ More
We investigate the 1/f noise properties of epitaxial graphene devices at low temperatures as a function of temperature, current and magnetic flux density. At low currents, an exponential decay of the 1/f noise power spectral density with increasing temperature is observed that indicates mesoscopic conductance fluctuations as the origin of 1/f noise at temperatures below 50 K. At higher currents, deviations from the typical quadratic current dependence and the exponential temperature dependence occur as a result of nonequilibrium conditions due to current heating. By applying the theory of Kubakaddi [S. S. Kubakaddi, Phys. Rev. B 79, 075417 (2009)], a model describing the 1/f noise power spectral density of nonequilibrium mesoscopic conductance fluctuations in epitaxial graphene is developed and used to determine the energy loss rate per carrier. In the regime of Shubnikov-de Haas oscillations a strong increase of 1/f noise is observed, which we attribute to an additional conductance fluctuation mechanism due to localized states in quantizing magnetic fields. When the device enters the regime of quantized Hall resistance, the 1/f noise vanishes. It reappears if the current is increased and the quantum Hall breakdown sets in.
△ Less
Submitted 16 September, 2016;
originally announced September 2016.
-
Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC
Authors:
Mattias Kruskopf,
Davood Momeni Pakdehi,
Klaus Pierz,
Stefan Wundrack,
Rainer Stosch,
Thorsten Dziomba,
Martin Goetz,
Jens Baringhaus,
Johannes Aprojanz,
Christoph Tegenkamp,
Jakob Lidzba,
Thomas Seyller,
Frank Hohls,
Franz J. Ahlers,
Hans W. Schumacher
Abstract:
We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation…
▽ More
We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of polymer adsorbates which act as a carbon source. With most of the steps well below 0.75 nm pure monolayer graphene without bilayer inclusions is formed with lateral dimensions only limited by the size of the substrate. This makes the polymer assisted sublimation growth technique the most promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K with until now unreached precision and high electron mobilities on mm scale devices.
△ Less
Submitted 6 June, 2016;
originally announced June 2016.
-
Epitaxial graphene on SiC: Modification of structural and electron transport properties by substrate pretreatment
Authors:
Mattias Kruskopf,
Klaus Pierz,
Stefan Wundrack,
Rainer Stosch,
Thorsten Dziomba,
Cay-Christian Kalmbach,
André Müller,
Jens Baringhaus,
Christoph Tegenkamp,
Franz J. Ahlers,
Hans W. Schumacher
Abstract:
The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0001) substrates. It turns out that the…
▽ More
The electrical transport properties of epitaxial graphene layers are correlated with the SiC surface morphology. In this study we show by atomic force microscopy and Raman measurements that the surface morphology and the structure of the epitaxial graphene layers change significantly when different pretreatment procedures are applied to nearly on-axis 6H-SiC(0001) substrates. It turns out that the often used hydrogen etching of the substrate is responsible for undesirable high macro steps evolving during graphene growth. A more advantageous type of sub-nanometer stepped graphene layers is obtained with a new method: a high-temperature conditioning of the SiC surface in argon atmosphere. The results can be explained by the observed graphene buffer layer domains after the conditioning process which suppress giant step bunching and graphene step flow growth. The superior electronic quality is demonstrated by a less extrinsic resistance anisotropy obtained in nano-probe transport experiments and by the excellent quantization of the Hall resistance in low-temperature magneto-transport measurements. The quantum Hall resistance agrees with the nominal value (half of the von Klitzing constant) within a standard deviation of 4.5*10(-9) which qualifies this method for the fabrication of electrical quantum standards.
△ Less
Submitted 27 April, 2015; v1 submitted 13 February, 2015;
originally announced February 2015.
