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Into the Origin of Electrical Conductivity for the Metal-Semiconductor Junction at the Atomic Level
Authors:
Arkadiusz Janas,
Witold Piskorz,
Aleksandr Kryshtal,
Grzegorz Cempura,
Wojciech Belza,
Adam Kruk,
Benedykt R. Jany,
Franciszek Krok
Abstract:
The metal-semiconductor (M-S) junction based devices are commonly used in all sorts of electronic devices. Their electrical properties are defined by the metallic phase properties with a respect to the semiconductor used. Here we make an in-depth survey on the origin of the M-S junction at the atomic scale by studying the properties of the AuIn2 nanoelectrodes formed on the InP(001) surface by the…
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The metal-semiconductor (M-S) junction based devices are commonly used in all sorts of electronic devices. Their electrical properties are defined by the metallic phase properties with a respect to the semiconductor used. Here we make an in-depth survey on the origin of the M-S junction at the atomic scale by studying the properties of the AuIn2 nanoelectrodes formed on the InP(001) surface by the in situ electrical measurements in combination with a detailed investigation of atomically resolved structure supported by the first-principle calculations of its local electrical properties. We have found that a different crystallographic orientation of the same metallic phase with a respect to the semiconductor structure influences strongly the M-S junction rectifying properties by subtle change of the metal Fermi level and influencing the band edge moving at the interface. This ultimately changes conductivity regime between Ohmic and Schottky type. The effect of crystallographic orientation has to be taken into account in the engineering of the M-S junction-based electronic devices.
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Submitted 13 September, 2021; v1 submitted 19 January, 2021;
originally announced January 2021.
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Melting and crystallization of Sn, Bi and Pb nanoparticles in contact with Al
Authors:
S. I. Bogatyrenko,
S. V. Dukarov,
M. M. Kolendovsky,
A. P. Kryshtal
Abstract:
The results of studies of supercooling upon crystallization value of Bi, Sn and Pb nanosized particles on the Al substrate and between the Al layers have been presented. It has been shown the efficiency of usage of layered film systems for investigation of the limiting supercooling in particle-matrix systems with an eutectic type of interaction between components. The obtained results have been di…
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The results of studies of supercooling upon crystallization value of Bi, Sn and Pb nanosized particles on the Al substrate and between the Al layers have been presented. It has been shown the efficiency of usage of layered film systems for investigation of the limiting supercooling in particle-matrix systems with an eutectic type of interaction between components. The obtained results have been discussed and compared with literature data.
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Predstavleny rezultaty issledovanij pereohlazhdenij pri kristallizacii nanorazmernyh chastic Bi, Sn i Pb na Al podlozhke i mezhdu sloyami alyuminiya. Pokazana effektivnost ispolzovaniya sloistyh plenochnyh sistem dlya issledovaniya predelnogo pereohlazhdeniya v sistemah chastica-matrica s evtekticheskim tipom vzaimodejstviya mezhdu komponentami. Poluchennye rezultaty obsuzhdeny i sopostavleny s literaturnymi dannymi.
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Submitted 25 July, 2020;
originally announced July 2020.
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Nanostructure phase and interface engineering via controlled Au self-assembly on GaAs(001) surface
Authors:
Arkadiusz Janas,
Benedykt R. Jany,
Konrad Szajna,
Alexandr Kryshtal,
Grzegorz Cempura,
Adam Kruk,
Franciszek Krok
Abstract:
We have investigated the temperature-dependent morphology and composition changes occurring during a controlled self-assembling of thin Au film on the Gallium arsenide (001) surface utilizing electron microscopy at nano and atomic levels. It has been found that the deposition of 2 ML of Au at a substrate temperature lower than 798 K leads to the formation of pure Au nanoislands. For the deposition…
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We have investigated the temperature-dependent morphology and composition changes occurring during a controlled self-assembling of thin Au film on the Gallium arsenide (001) surface utilizing electron microscopy at nano and atomic levels. It has been found that the deposition of 2 ML of Au at a substrate temperature lower than 798 K leads to the formation of pure Au nanoislands. For the deposition at a substrate temperature of about 798 K the nanostructures of the stoichiometric AuGa phase were/had been grown. Gold deposition at higher substrate temperatures results in the formation of octagonal nanostructures composed of an AuGa2 alloy. We have proved that the temperature-controlled efficiency of Au-induced etching-like of the GaAs substrate follows in a layer-by-layer manner leading to the enrichment of the substrate surface in gallium. The excess Ga together with Au forms liquid droplets which, while cooling the sample to room temperature, crystallize therein developing crystalline nanostructures of atomically-sharp interfaces with the substrate. The minimal stable cluster of 3 atoms and the activation energy for the surface diffusion Ed=0.816+-0.038eV was determined. We show that by changing the temperature of the self-assembling process one can control the phase, interface and the size of the nanostructures formed.
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Submitted 26 June, 2019; v1 submitted 28 March, 2019;
originally announced March 2019.
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Towards Understanding of Gold Interaction with AIII-BV Semiconductors at Atomic Level
Authors:
Benedykt R. Jany,
Arkadiusz Janas,
Witold Piskorz,
Konrad Szajna,
Aleksandr Kryshtal,
Grzegorz Cempura,
Paulina Indyka,
Adam Kruk,
Aleksandra Czyrska-Filemonowicz,
Franciszek Krok
Abstract:
AIII-BV semiconductors have been considered for decades to be a promising material in overcoming the limitations of silicon semiconductor devices. One of the important aspects within AIII-BV semiconductor technology are gold-semiconductor interactions on the nanoscale. We report on investigations into the basic chemical interactions of Au atoms with AIII-BV semiconductor crystals by an investigati…
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AIII-BV semiconductors have been considered for decades to be a promising material in overcoming the limitations of silicon semiconductor devices. One of the important aspects within AIII-BV semiconductor technology are gold-semiconductor interactions on the nanoscale. We report on investigations into the basic chemical interactions of Au atoms with AIII-BV semiconductor crystals by an investigation of nanostructures formation in the process of thermally-induced Au self-assembly on various AIII-BV surfaces, and this by means of atomically resolved High Angle Annular Dark Field (HAADF) Scanning Transmission Electron Microscopy (STEM) measurements. We have found that the formation of nanostructures is a consequence of the surface diffusion and nucleation of adatoms produced by Au induced chemical reactions on AIII-BV semiconductor surfaces. Only for InSb crystal we have found that there is efficient diffusion of Au atoms into the bulk, which we experimentally studied by Machine Learning HAADF STEM image quantification and theoretically by Density Functional Theory (DFT) calculations with the inclusion of finite temperature effects. Furthermore, the effective number of Au atoms needed to release one AIII metal atom has been estimated. The experimental finding reveals a difference in the Au interactions with In- and Ga-based groups of AIII-BV semiconductors. Our comprehensive and systematic studies uncover details of the Au interactions with the AIII-BV surface at the atomic level with chemical sensitivity and shed new light on the fundamental Au/AIII-BV interactions at the atomic scale.
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Submitted 20 April, 2021; v1 submitted 6 November, 2018;
originally announced November 2018.
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Incompressible MHD modes in the thin magnetically twisted flux tube
Authors:
O. K. Cheremnykh,
V. Fedun,
A. N. Kryshtal,
G. Verth
Abstract:
Context. Observations have shown that twisted magnetic fields naturally occur, and indeed are omnipresent in the Sun's atmosphere. It is therefore of great theoretical interest in solar atmospheric waves research to investigate the types of magnetohydrodynamic (MHD) wave modes that can propagate along twisted magnetic flux tubes. Aims. Within the framework of ideal MHD, the main aim of this work i…
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Context. Observations have shown that twisted magnetic fields naturally occur, and indeed are omnipresent in the Sun's atmosphere. It is therefore of great theoretical interest in solar atmospheric waves research to investigate the types of magnetohydrodynamic (MHD) wave modes that can propagate along twisted magnetic flux tubes. Aims. Within the framework of ideal MHD, the main aim of this work is to investigate small amplitude incompressible wave modes of twisted magnetic flux tubes with m more or equal 1. The axial magnetic field strength inside and outside the tube will be allowed to vary, to ensure the results will not be restricted to only cold plasma equilibria conditions. Methods. The dispersion equation for these incompressible linear MHD wave modes was derived analytically by implementing the long wavelength approximation. Results. It is shown, in the long wavelength limit, that both the frequency and radial velocity profile of the m = 1 kink mode are completely unaffected by the choice of internal background magnetic twist. However, fluting modes with m more or equal 2 are sensitive to the particular radial profile of magnetic twist chosen. Furthermore, due to background twist, a low frequency cut-off is introduced for fluting modes that is not present for kink modes. From an observational point of view, although magnetic twist does not affect the propagation of long wavelength kink modes, for fluting modes it will either work for or against the propagation, depending on the direction of wave travel relative to the sign of the background twist.
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Submitted 3 July, 2017;
originally announced July 2017.
