Microheater actuators as a versatile platform for strain engineering in 2D materials
Authors:
Yu Kyoung Ryu,
Felix Carrascoso,
Rubén López-Nebreda,
Nicolás Agraït,
Riccardo Frisenda,
Andres Castellanos-Gomez
Abstract:
We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion coefficient. By running current through the microheater one can vary the temperature of the polymer and induce a controlled biaxial expansion of its surface. This contro…
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We present microfabricated thermal actuators to engineer the biaxial strain in two-dimensional (2D) materials. These actuators are based on microheater circuits patterned onto the surface of a polymer with a high thermal expansion coefficient. By running current through the microheater one can vary the temperature of the polymer and induce a controlled biaxial expansion of its surface. This controlled biaxial expansion can be transduced to biaxial strain to 2D materials, placed onto the polymer surface, which in turn induces a shift of the optical spectrum. Our thermal strain actuators can reach a maximum biaxial strain of 0.64 % and they can be modulated at frequencies up to 8 Hz. The compact geometry of these actuators results in a negligible spatial drift of 0.03 um/deg, which facilitates their integration in optical spectroscopy measurements. We illustrate the potential of this strain engineering platform to fabricate a strain-actuated optical modulator with single-layer MoS2.
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Submitted 11 June, 2020;
originally announced June 2020.
Chemically driven isothermal closed space vapor transport of MoO$_2$: thin films, flakes and in-situ tellurization
Authors:
O. de Melo,
L. García-Pelayo,
Y. González,
O. Concepción,
M. Manso-Silván,
R. López-Nebreda,
J. L. Pau,
J. C. González,
A. Climent-Font,
V. Torres-Costa
Abstract:
A novel procedure, based in a closed space vapor transport (CSVT) configuration, has been devised to grow films or flakes of pure MoO2 in a reductive atmosphere, at relatively low temperature and using MoO3 as the source. In contrast with conventional CSVT technique, in the proposed method a temperature gradient is not required for the growth to take place, which occurs through an intermediate vol…
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A novel procedure, based in a closed space vapor transport (CSVT) configuration, has been devised to grow films or flakes of pure MoO2 in a reductive atmosphere, at relatively low temperature and using MoO3 as the source. In contrast with conventional CSVT technique, in the proposed method a temperature gradient is not required for the growth to take place, which occurs through an intermediate volatile transport species that is produced in the complex reduction reaction of MoO3. An added value of this simple method is the possibility of transforming the MoO2 into MoTe2, one of the most interesting members of the transition metal dichalcogenide family. This is achieved in a sequential process that includes the growth of Mo oxide and its (in-situ) tellurization in two consecutive steps.
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Submitted 17 September, 2019;
originally announced September 2019.
