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Gain suppression study on LGADs at the CENPA tandem accelerator
Authors:
S. Braun,
Q. Buat,
J. Ding,
P. Kammel,
S. M. Mazza,
F. McKinney-Martinez,
A. Molnar,
C. Lansdell,
J. Ott,
A. Seiden,
B. Schumm,
Y. Zhao
Abstract:
Low-Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. One recent challenge in the use of LGADs, studied by several research groups, is the gain suppression mechanism for large localized charge deposits. Using the CENPA Tandem accelerator at the University of Washington, the response of the LGADs…
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Low-Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer that provides moderate internal signal amplification. One recent challenge in the use of LGADs, studied by several research groups, is the gain suppression mechanism for large localized charge deposits. Using the CENPA Tandem accelerator at the University of Washington, the response of the LGADs to MeV-range energy deposits from a proton beam was studied. Two LGAD prototypes and a PIN diode were characterized, and the gain of the devices was determined as a function of bias voltage, incidence beam angle and proton energy. This study was conducted in the scope of the PIONEER experiment, an experiment proposed at the Paul Scherrer Institute to perform high-precision measurements of rare pion decays. %At the center of the experiment, a high-granularity active target (ATAR) will stop the pion and characterize its decay. A range of deposited charge from Minimum Ionizing Particle (MIP, few 10s of KeV) from positrons to several MeV from the stopping pions/muons is expected in PIONEER; the detection and separation of close-by hits in such a wide dynamic range will be a main challenge of the experiment. To achieve this goal, the gain suppression mechanism has to be understood fully.
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Submitted 3 May, 2024;
originally announced May 2024.
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Long-Distance Signal Propagation in AC-LGAD
Authors:
Casey Bishop,
Ayan Das,
Jane Ding,
Matthew Gignac,
Forest Martinez-McKinney,
Simone M. Mazza,
Adam Molnar,
Noah Nagel,
Mohammad Nizam,
Jennifer Ott,
Hartmut F. -W. Sadrozinski,
Bruce Schumm,
Abraham Seiden,
Taylor Shin,
Andrew Summerell,
Max Wilder,
Yuzhan Zhao
Abstract:
We investigate the signal propagation in AC-LGAD (aka RSD), which are LGAD with a common N+ layer and segmented AC-coupled readout contacts, by measuring response to IR laser TCT on a large selection of AC-LGAD with strip readout. The interest for this topic derives from the realization that while large charge sharing between neighboring strips is essential for good position resolution, large shar…
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We investigate the signal propagation in AC-LGAD (aka RSD), which are LGAD with a common N+ layer and segmented AC-coupled readout contacts, by measuring response to IR laser TCT on a large selection of AC-LGAD with strip readout. The interest for this topic derives from the realization that while large charge sharing between neighboring strips is essential for good position resolution, large sharing beyond the next neighbor generates background signals which in general are detrimental to the sensor goal of low occupancy. Using AC-LGAD with strip readout produced by Hamamatsu Photonics (HPK), we evaluate the effects of a variety of sensor properties, including geometrical parameters (strip length, width), process parameters like the N+ layer resistivity, the coupling capacitance, and the thickness of the bulk on the signal sharing and the position resolution.
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Submitted 22 May, 2024; v1 submitted 1 March, 2024;
originally announced March 2024.
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Synchrotron light source X-ray detection with Low-Gain Avalanche Diodes
Authors:
S. M. Mazza,
G. Saito,
Y. Zhao,
T. Kirkes,
N. Yoho,
D. Yerdea,
N. Nagel,
J. Ott,
M. Nizam,
M. Leite,
M. Moralles,
H. F. -W. Sadrozinski,
A. Seiden,
B. Schumm,
F. McKinney-Martinez,
G. Giacomini,
W. Chen
Abstract:
The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin silicon detector with internal gain, to X-rays of energies between 6-70 keV was characterized at the SLAC light source (SSRL). The utilized beamline at SSRL was 11-2, with a nominal beam size of 3 cm x 0.5 cm, a repetition rate of 500 MHz, and very monochromatic. LGADs of different thicknesses and gain layer configurations…
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The response of Low Gain Avalanche Diodes (LGADs), which are a type of thin silicon detector with internal gain, to X-rays of energies between 6-70 keV was characterized at the SLAC light source (SSRL). The utilized beamline at SSRL was 11-2, with a nominal beam size of 3 cm x 0.5 cm, a repetition rate of 500 MHz, and very monochromatic. LGADs of different thicknesses and gain layer configurations were read out using fast amplification boards and digitized with a fast oscilloscope. Standard PiN devices were characterized as well. The devices' energy resolution and time resolution as a function of X-ray energy were measured. The charge collection and multiplication mechanism were simulated using TCAD Sentaurus, and the results were compared with the collected data.
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Submitted 1 September, 2023; v1 submitted 27 June, 2023;
originally announced June 2023.
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TCAD simulation of AC-LGADs
Authors:
M. Nizam,
K. W. Shin,
S. M. Mazza,
J. Ott,
A. Seiden,
B. Schumm,
Y. Zhao
Abstract:
Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good as 17 ps for minimum ionizing particles. However, the current major limiting factor in granularity is due to protection structures preventing breakdown caused by high electric fields at the edge of the segmented implants. This structure, called Junction Terminatio…
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Low Gain Avalanche Detectors (LGADs) are thin silicon detectors with moderate internal signal amplification and time resolution as good as 17 ps for minimum ionizing particles. However, the current major limiting factor in granularity is due to protection structures preventing breakdown caused by high electric fields at the edge of the segmented implants. This structure, called Junction Termination Extension (JTE), causes a region of 50-100~\um\ of inactive space. Therefore, the granularity of LGAD sensors is currently limited to the mm scale. A solution would be AC-coupled LGADs (AC-LGADs) which can provide spatial resolution on the 10's of um scale. This is achieved by an un-segmented (p-type) gain layer and (n-type) N-layer, and a dielectric layer separating the metal readout pads. The high spatial precision is achieved by using the information from multiple pads, exploiting the intrinsic charge-sharing capabilities of the AC-LGAD provided by the common N-layer. TCAD software (Silvaco and Sentaurus) was used to simulate the behavior of AC-LGADs. A set of simulated devices was prepared by changing several parameters in the sensor: N+ resistivity, strip length, and bulk thickness.
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Submitted 24 May, 2023;
originally announced May 2023.
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Experiments and Facilities for Accelerator-Based Dark Sector Searches
Authors:
Philip Ilten,
Nhan Tran,
Patrick Achenbach,
Akitaka Ariga,
Tomoko Ariga,
Marco Battaglieri,
Jianming Bian,
Pietro Bisio,
Andrea Celentano,
Matthew Citron,
Paolo Crivelli,
Giovanni de Lellis,
Antonia Di Crescenzo,
Milind Diwan,
Jonathan L. Feng,
Corrado Gatto,
Stefania Gori,
Felix Kling,
Luca Marsicano,
Simone M. Mazza,
Josh McFayden,
Laura Molina-Bueno,
Marco Spreafico,
Natalia Toro,
Matthew Toups
, et al. (5 additional authors not shown)
Abstract:
This paper provides an overview of experiments and facilities for accelerator-based dark matter searches as part of the US Community Study on the Future of Particle Physics (Snowmass 2021). Companion white papers to this paper present the physics drivers: thermal dark matter, visible dark portals, and new flavors and rich dark sectors.
This paper provides an overview of experiments and facilities for accelerator-based dark matter searches as part of the US Community Study on the Future of Particle Physics (Snowmass 2021). Companion white papers to this paper present the physics drivers: thermal dark matter, visible dark portals, and new flavors and rich dark sectors.
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Submitted 8 June, 2022;
originally announced June 2022.
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Testing Lepton Flavor Universality and CKM Unitarity with Rare Pion Decays in the PIONEER experiment
Authors:
PIONEER Collaboration,
W. Altmannshofer,
H. Binney,
E. Blucher,
D. Bryman,
L. Caminada,
S. Chen,
V. Cirigliano,
S. Corrodi,
A. Crivellin,
S. Cuen-Rochin,
A. Di Canto,
L. Doria,
A. Gaponenko,
A. Garcia,
L. Gibbons,
C. Glaser,
M. Escobar Godoy,
D. Göldi,
S. Gori,
T. Gorringe,
D. Hertzog,
Z. Hodge,
M. Hoferichter,
S. Ito
, et al. (36 additional authors not shown)
Abstract:
The physics motivation and the conceptual design of the PIONEER experiment, a next-generation rare pion decay experiment testing lepton flavor universality and CKM unitarity, are described. Phase I of the PIONEER experiment, which was proposed and approved at Paul Scherrer Institut, aims at measuring the charged-pion branching ratio to electrons vs.\ muons, $R_{e/μ}$, 15 times more precisely than…
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The physics motivation and the conceptual design of the PIONEER experiment, a next-generation rare pion decay experiment testing lepton flavor universality and CKM unitarity, are described. Phase I of the PIONEER experiment, which was proposed and approved at Paul Scherrer Institut, aims at measuring the charged-pion branching ratio to electrons vs.\ muons, $R_{e/μ}$, 15 times more precisely than the current experimental result, reaching the precision of the Standard Model (SM) prediction at 1 part in $10^4$. Considering several inconsistencies between the SM predictions and data pointing towards the potential violation of lepton flavor universality, the PIONEER experiment will probe non-SM explanations of these anomalies through sensitivity to quantum effects of new particles up to the PeV mass scale. The later phases of the PIONEER experiment aim at improving the experimental precision of the branching ratio of pion beta decay (BRPB), $π^+\to π^0 e^+ ν(γ)$, currently at $1.036(6)\times10^{-8}$, by a factor of three (Phase II) and an order of magnitude (Phase III). Such precise measurements of BRPB will allow for tests of CKM unitarity in light of the Cabibbo Angle Anomaly and the theoretically cleanest extraction of $|V_{ud}|$ at the 0.02\% level, comparable to the deduction from superallowed beta decays.
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Submitted 10 March, 2022;
originally announced March 2022.
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PIONEER: Studies of Rare Pion Decays
Authors:
PIONEER Collaboration,
W. Altmannshofer,
H. Binney,
E. Blucher,
D. Bryman,
L. Caminada,
S. Chen,
V. Cirigliano,
S. Corrodi,
A. Crivellin,
S. Cuen-Rochin,
A. DiCanto,
L. Doria,
A. Gaponenko,
A. Garcia,
L. Gibbons,
C. Glaser,
M. Escobar Godoy,
D. Göldi,
S. Gori,
T. Gorringe,
D. Hertzog,
Z. Hodge,
M. Hoferichter,
S. Ito
, et al. (36 additional authors not shown)
Abstract:
A next-generation rare pion decay experiment, PIONEER, is strongly motivated by several inconsistencies between Standard Model (SM) predictions and data pointing towards the potential violation of lepton flavor universality. It will probe non-SM explanations of these anomalies through sensitivity to quantum effects of new particles even if their masses are at very high scales. Measurement of the c…
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A next-generation rare pion decay experiment, PIONEER, is strongly motivated by several inconsistencies between Standard Model (SM) predictions and data pointing towards the potential violation of lepton flavor universality. It will probe non-SM explanations of these anomalies through sensitivity to quantum effects of new particles even if their masses are at very high scales. Measurement of the charged-pion branching ratio to electrons vs. muons $R_{e/μ}$ is extremely sensitive to new physics effects. At present, the SM prediction for $R_{e/μ}$ is known to 1 part in $10^4$, which is 15 times more precise than the current experimental result. An experiment reaching the theoretical accuracy will test lepton flavor universality at an unprecedented level, probing mass scales up to the PeV range. Measurement of pion beta decay, $π^+\to π^0 e^+ ν(γ)$, with 3 to 10-fold improvement in sensitivity, will determine $V_{ud}$ in a theoretically pristine manner and test CKM unitarity, which is very important in light of the recently emerged tensions. In addition, various exotic rare decays involving sterile neutrinos and axions will be searched for with unprecedented sensitivity. The experiment design benefits from experience with the recent PIENU and PEN experiments at TRIUMF and the Paul Scherrer Institut (PSI). Excellent energy and time resolutions, greatly increased calorimeter depth, high-speed detector and electronics response, large solid angle coverage, and complete event reconstruction are all critical aspects of the approach. The PIONEER experiment design includes a 3$π$ sr 25 radiation length calorimeter, a segmented low gain avalanche detector stopping target, a positron tracker, and other detectors. Using intense pion beams, and state-of-the-art instrumentation and computational resources, the experiments can be performed at the PSI ring cyclotron.
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Submitted 7 March, 2022; v1 submitted 3 March, 2022;
originally announced March 2022.
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Tuning of gain layer doping concentration and Carbon implantation effect on deep gain layer
Authors:
S. M. Mazza,
C. Gee,
Y. Zhao,
R. Padilla,
E. Ryan,
N. Tournebise,
B. Darby,
F. McKinney-Martinez,
H. F. -W. Sadrozinski,
A. Seiden,
B. Schumm,
V. Cindro,
G. Kramberger,
I. Mandić,
M. Mikuž,
M. Zavrtanik,
R. Arcidiacono,
N. Cartiglia,
M. Ferrero,
M. Mandurrino,
V. Sola,
A. Staiano,
M. Boscardin,
G. F. Della Betta,
F. Ficorella
, et al. (2 additional authors not shown)
Abstract:
Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 Neq/cm2. The sensors analysed in this paper are an improvement after the lessons learned from previous FBK and…
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Next generation Low Gain Avalanche Diodes (LGAD) produced by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with ~1MeV neutrons at the JSI facility in Ljubljana. Sensors were irradiated to a maximum 1-MeV equivalent fluence of 2.5E15 Neq/cm2. The sensors analysed in this paper are an improvement after the lessons learned from previous FBK and HPK productions that were already reported in precedent papers. The gain layer of HPK sensors was fine-tuned to optimize the performance before and after irradiation. FBK sensors instead combined the benefit of Carbon infusion and deep gain layer to further the radiation hardness of the sensors and reduced the bulk thickness to enhance the timing resolution. The sensor performance was measured in charge collection studies using \b{eta}-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. The collected charge and the timing resolution were measured as a function of bias voltage at -30C. Finally a correlation is shown between the bias voltage to deplete the gain layer and the bias voltage needed to reach a certain amount of gain in the sensor. HPK sensors showed a better performance before irradiation while maintaining the radiation hardness of the previous production. FBK sensors showed exceptional radiation hardness allowing a collected charge up to 10 fC and a time resolution of 40 ps at the maximum fluence.
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Submitted 31 January, 2022; v1 submitted 21 January, 2022;
originally announced January 2022.
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Inter-pad dead regions of irradiated FBK Low Gain Avalanche Detectors
Authors:
B. Darby,
S. M. Mazza,
F. McKinney-Martinez,
R. Padilla,
H. F. -W. Sadrozinski,
A. Seiden,
B. Schumm,
M. Wilder,
Y. Zhao,
R. Arcidiacono,
N. Cartiglia,
M. Ferrero,
M. Mandurrino,
V. Sola,
A. Staiano,
V. Cindro,
G. Kranberger,
I. Mandiz,
M. Mikuz,
M. Zavtranik,
M. Boscardin,
G. F. Della Betta,
F. Ficorella,
L. Pancheri,
G. Paternoster
Abstract:
Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and after irradiation with neutrons. In this study, the Inter-pad distances (IPDs), defined as the width of the distances between pads, were measured with a TCT laser system. The response of the laser was tuned using $β$-pa…
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Low Gain Avalanche Detectors (LGADs) are a type of thin silicon detector with a highly doped gain layer. LGADs manufactured by Fondazione Bruno Kessler (FBK) were tested before and after irradiation with neutrons. In this study, the Inter-pad distances (IPDs), defined as the width of the distances between pads, were measured with a TCT laser system. The response of the laser was tuned using $β$-particles from a 90Sr source. These insensitive "dead zones" are created by a protection structure to avoid breakdown, the Junction Termination Extension (JTE), which separates the pads. The effect of neutron radiation damage at \fluence{1.5}{15}, and \fluence{2.5}{15} on IPDs was studied. These distances are compared to the nominal distances given from the vendor, it was found that the higher fluence corresponds to a better matching of the nominal IPD.
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Submitted 19 September, 2022; v1 submitted 24 November, 2021;
originally announced November 2021.
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An LGAD-based full active target for the PIONEER experiment
Authors:
Simone Michele Mazza
Abstract:
PIONEER is a next-generation experiment to measure the charged pion branching ratios to electrons vs muons $R_e/μ= \frac{Γ\left(π^+ \rightarrow e^+ ν(γ) \right)}{Γ\left(π^+ \rightarrow μ^+ ν(γ)\right)}$ and pion beta decay (Pib) $π^+\rightarrowπ^0eν$. The pion to muon decay ($π\rightarrowμ\rightarrow e$) has four orders of magnitude higher probability than the pion to electron decay (…
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PIONEER is a next-generation experiment to measure the charged pion branching ratios to electrons vs muons $R_e/μ= \frac{Γ\left(π^+ \rightarrow e^+ ν(γ) \right)}{Γ\left(π^+ \rightarrow μ^+ ν(γ)\right)}$ and pion beta decay (Pib) $π^+\rightarrowπ^0eν$. The pion to muon decay ($π\rightarrowμ\rightarrow e$) has four orders of magnitude higher probability than the pion to electron decay ($π\rightarrow eν$). To achieve the necessary branching-ratio precision it is crucial to suppress the $π\rightarrowμ\rightarrow e$ energy spectrum that overlaps with the low energy tail of $π\rightarrow eν$. A high granularity active target (ATAR) is being designed to suppress the muon decay background sufficiently so that this tail can be directly measured. In addition, ATAR will provide detailed 4D tracking information to separate the energy deposits of the pion decay products in both position and time. This will suppress other significant systematic uncertainties (pulse pile-up, decay in flight of slow pions) to $<$~0.01\%, allowing the overall uncertainty in to be reduced to O(0.01\%). The chosen technology for the ATAR is Low Gain Avalanche Detector (LGAD). These are thin silicon detectors (down to 50~$μm$ in thickness or less) with moderate internal signal amplification and great time resolution. To achieve a ~100\% active region several emerging technologies are being evaluated, such as AC-LGADs and TI-LGADs. A dynamic range from MiP (positron) to several MeV (pion/muon) of deposited charge is expected, the detection and separation of close-by hits in such a wide dynamic range will be a main challenge. Furthermore the compactness and the requirement of low inactive material of the ATAR present challenges for the readout system, forcing the amplification chip and digitization to be positioned away from active region.
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Submitted 7 January, 2022; v1 submitted 9 November, 2021;
originally announced November 2021.
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A new approach to achieving high granularity for silicon diode detectors with impact ionization gain
Authors:
S. Ayyoub,
C. Gee,
R. Islam,
S. M. Mazza,
B. Schumm,
A. Seiden,
Y. Zhao
Abstract:
Low Gain Avalanche Diodes (LGADs) are thin (20-50 $μm$)silicon di ode sensors with modest internal gain (typically 5 to 50) and exceptional time resolution (17 $ps$ to 50 $ps$). However, the granularity of such devices is limited to the millimeter scale due to the need to include protection structures at the boundaries of the readout pads to avoid premature breakdown due to large local electric fi…
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Low Gain Avalanche Diodes (LGADs) are thin (20-50 $μm$)silicon di ode sensors with modest internal gain (typically 5 to 50) and exceptional time resolution (17 $ps$ to 50 $ps$). However, the granularity of such devices is limited to the millimeter scale due to the need to include protection structures at the boundaries of the readout pads to avoid premature breakdown due to large local electric fields. In this paper we present a new approach -- the Deep-Junction LGAD (DJ-LGAD) -- that decouples the high-field gain region from the readout plane. This approach is expected to improve the achievable LGAD granularity to the tens-of-micron scale while maintaining direct charge collection on the segmented electrodes.
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Submitted 2 January, 2021;
originally announced January 2021.
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Picosecond Timing Resolution Measurements of Low Gain Avalanche Detectors with a 120 GeV Proton Beam for the TOPSiDE Detector Concept
Authors:
M. Jadhav,
W. Armstrong,
I. Cloet,
S. Joosten,
S. M. Mazza,
J. Metcalfe,
Z. -E. Meziani,
H. F. -W. Sadrozinski,
B. Schumm,
A. Seiden
Abstract:
This paper presents results that take a critical step toward proving 10 ps timing resolution's feasibility for particle identification in the TOPSiDE detector concept for the Electron-Ion Collider. Measurements of LGADs with a thickness of 35 micro-m and 50 micro-m are evaluated with a 120 GeV proton beam. The performance of the gain and timing response is assessed, including the dependence on the…
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This paper presents results that take a critical step toward proving 10 ps timing resolution's feasibility for particle identification in the TOPSiDE detector concept for the Electron-Ion Collider. Measurements of LGADs with a thickness of 35 micro-m and 50 micro-m are evaluated with a 120 GeV proton beam. The performance of the gain and timing response is assessed, including the dependence on the reverse bias voltage and operating temperature. The best timing resolution of UFSDs in a test beam to date is achieved using three combined planes of 35 micro-m thick LGADs at -30 degree celsius with a precision of 14.3 ps (uncertainty 1.5 ps).
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Submitted 19 February, 2021; v1 submitted 6 October, 2020;
originally announced October 2020.
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Potential for Improved Time Resolution Using Very Thin Ultra-Fast Silicon Detectors (UFSDs)
Authors:
A. Seiden,
H. Ren,
Y. Jin,
S. Christie,
Z. Galloway,
C. Gee,
C. Labitan,
M. Lockerby,
F. Martinez-McKinney,
S. M. Mazza,
R. Padilla,
H. F. -W. Sadrozinski,
B. Schumm,
M. Wilder,
W. Wyatt,
Y. Zhao,
N. Cartiglia
Abstract:
Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain allows excellent time measurement for impinging minimum ionizing charged particles. An important design consideration is the sensor thickness, which has a stron…
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Ultra-Fast Silicon Detectors (UFSDs) are n-in-p silicon detectors that implement moderate gain (typically 5 to 25) using a thin highly doped p++ layer between the high resistivity p-bulk and the junction of the sensor. The presence of gain allows excellent time measurement for impinging minimum ionizing charged particles. An important design consideration is the sensor thickness, which has a strong impact on the achievable time resolution. We present the result of measurements for LGADs of thickness between 20 micro-m and 50 micro-m. The data are fit to a formula that captures the impact of both electronic jitter and Landau fluctuations on the time resolution. The data illustrate the importance of having a saturated electron drift velocity and a large signal-to-noise in order to achieve good time resolution. Sensors of 20 micro-m thickness offer the potential of 10 to 15 ps time resolution per measurement, a significant improvement over the value for the 50 micro-m sensors that have been typically used to date.
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Submitted 24 February, 2021; v1 submitted 7 June, 2020;
originally announced June 2020.
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Radiation Campaign of HPK Prototype LGAD sensors for the High-Granularity Timing Detector (HGTD)
Authors:
X. Shi,
M. K. Ayoub,
J. Barreiro Guimarães da Costa,
H. Cui,
R. Kiuchi,
Y. Fan,
S. Han,
Y. Huang,
M. Jing,
Z. Liang,
B. Liu,
J. Liu,
F. Lyu,
B. Qi,
K. Ran,
L. Shan,
L. Shi,
Y. Tan,
K. Wu,
S. Xiao,
T. Yang,
Y. Yang,
C. Yu,
M. Zhao,
X. Zhuang
, et al. (52 additional authors not shown)
Abstract:
We report on the results of a radiation campaign with neutrons and protons of Low Gain Avalanche Detectors (LGAD) produced by Hamamatsu (HPK) as prototypes for the High-Granularity Timing Detector (HGTD) in ATLAS. Sensors with an active thickness of 50~$μ$m were irradiated in steps of roughly 2$\times$ up to a fluence of $3\times10^{15}~\mathrm{n_{eq}cm^{-2}}$. As a function of the fluence, the co…
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We report on the results of a radiation campaign with neutrons and protons of Low Gain Avalanche Detectors (LGAD) produced by Hamamatsu (HPK) as prototypes for the High-Granularity Timing Detector (HGTD) in ATLAS. Sensors with an active thickness of 50~$μ$m were irradiated in steps of roughly 2$\times$ up to a fluence of $3\times10^{15}~\mathrm{n_{eq}cm^{-2}}$. As a function of the fluence, the collected charge and time resolution of the irradiated sensors will be reported for operation at $-30^{\circ}$.
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Submitted 28 April, 2020;
originally announced April 2020.
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Effect of deep gain layer and Carbon infusion on LGAD radiation hardness
Authors:
R Padilla,
C. Labitan,
Z. Galloway,
C. Gee,
S. M. Mazza,
F. McKinney-Martinez,
H. F. -W. Sadrozinski,
A. Seiden,
B. Schumm,
M. Wilder,
Y. Zhao,
H. Ren,
Y. Jin,
M. Lockerby,
V. Cindro,
G. Kramberger,
I. Mandiz,
M. Mikuz,
M. Zavrtanik,
R. Arcidiacono,
N. Cartiglia,
M. Ferrero,
M. Mandurrino,
V. Sola,
A. Staiano
Abstract:
The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Car…
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The properties of 50 um thick Low Gain Avalanche Diode (LGAD) detectors manufactured by Hamamatsu photonics (HPK) and Fondazione Bruno Kessler (FBK) were tested before and after irradiation with 1 MeV neutrons. Their performance were measured in charge collection studies using b-particles from a 90Sr source and in capacitance-voltage scans (C-V) to determine the bias to deplete the gain layer. Carbon infusion to the gain layer of the sensors was tested by FBK in the UFSD3 production. HPK instead produced LGADs with a very thin, highly doped and deep multiplication layer. The sensors were exposed to a neutron fluence from 4e14 neq/cm2 to 4e15 neq/cm2. The collected charge and the timing resolution were measured as a function of bias voltage at -30C, furthermore the profile of the capacitance over voltage of the sensors was measured.
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Submitted 27 July, 2020; v1 submitted 10 April, 2020;
originally announced April 2020.
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Layout and Performance of HPK Prototype LGAD Sensors for the High-Granularity Timing Detector
Authors:
X. Yang,
S. Alderweireldt,
N. Atanov,
M. K. Ayoub,
J. Barreiro Guimaraes da Costa,
L. Castillo Garcia,
H. Chen,
S. Christie,
V. Cindro,
H. Cui,
G. D'Amen,
Y. Davydov,
Y. Y. Fan,
Z. Galloway,
J. J. Ge,
C. Gee,
G. Giacomini,
E. L. Gkougkousis,
C. Grieco,
S. Grinstein,
J. Grosse-Knetter,
S. Guindon,
S. Han,
A. Howard,
Y. P. Huang
, et al. (54 additional authors not shown)
Abstract:
The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology will cover the pseudo-rapidity region of $2.4<|η|<4.0$ with two end caps on each side and a total area of 6.4 $m^2$. The timing performance can be improved by implanting an internal gain layer that can produce signal with a fast rising…
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The High-Granularity Timing Detector is a detector proposed for the ATLAS Phase II upgrade. The detector, based on the Low-Gain Avalanche Detector (LGAD) technology will cover the pseudo-rapidity region of $2.4<|η|<4.0$ with two end caps on each side and a total area of 6.4 $m^2$. The timing performance can be improved by implanting an internal gain layer that can produce signal with a fast rising edge, which improve significantly the signal-to-noise ratio. The required average timing resolution per track for a minimum-ionising particle is 30 ps at the start and 50 ps at the end of the HL-LHC operation. This is achieved with several layers of LGAD. The innermost region of the detector would accumulate a 1 MeV-neutron equivalent fluence up to $2.5 \times 10^{15} cm^{-2}$ before being replaced during the scheduled shutdowns. The addition of this new detector is expected to play an important role in the mitigation of high pile-up at the HL-LHC. The layout and performance of the various versions of LGAD prototypes produced by Hamamatsu (HPK) have been studied by the ATLAS Collaboration. The breakdown voltages, depletion voltages, inter-pad gaps, collected charge as well as the time resolution have been measured and the production yield of large size sensors has been evaluated.
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Submitted 31 March, 2020;
originally announced March 2020.
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Experimental Study of Acceptor Removal in UFSD
Authors:
Y. Jin,
H. Ren,
S. Christie,
Z. Galloway,
C. Gee,
C. Labitan,
M. Lockerby,
F. Martinez-McKinney,
S. M. Mazza,
R. Padilla,
H. F. -W. Sadrozinski,
B. Schumm,
A. Seiden,
M. Wilder,
W. Wyatt,
Y. Zhao,
R. Arcidiacono,
N. Cartiglia,
M. Ferrero,
M. Mandurrino,
F. Siviero,
V. Sola,
M. Tornago,
V. Cindro,
A. Howard
, et al. (3 additional authors not shown)
Abstract:
The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the doping concentration and with measurements of charge collection using charged particles. We find a perfect linear correlation between t…
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The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the doping concentration and with measurements of charge collection using charged particles. We find a perfect linear correlation between the bias voltage to deplete the gain layer determined with C-V and the bias voltage to collect a defined charge, measured with charge collection. An example for the usefulness of this correlation is presented.
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Submitted 16 September, 2020; v1 submitted 16 March, 2020;
originally announced March 2020.
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Proprieties of FBK UFSDs after neutron and proton irradiation up to 6*10e15 neq/cm2
Authors:
S. M. Mazza,
E. Estrada,
Z. Galloway,
C. Gee,
A. Goto,
Z. Luce,
F. McKinney-Martinez,
R. Rodriguez,
H. F. -W. Sadrozinski,
A. Seiden,
B. Smithers,
Y. Zhao,
V. Cindro,
G. Kramberger,
I. Mandić,
M. Mikuž,
M. Zavrtanik R. Arcidiacono,
N. Cartiglia,
M. Ferrero,
M. Mandurrino,
V. Sola,
A. Staiano,
M. Boscardin,
G. F. Della Betta,
F. Ficorella
, et al. (2 additional authors not shown)
Abstract:
The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiati…
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The properties of 60-μm thick Ultra-Fast Silicon Detectors (UFSD) detectors manufactured by Fondazione Bruno Kessler (FBK), Trento (Italy) were tested before and after irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source . This FBK production, called UFSD2, has UFSDs with gain layer made of Boron, Boron low-diffusion, Gallium, Carbonated Boron and Carbonated. The irradiation with neutrons took place at the TRIGA reactor in Ljubljana, while the proton irradiation took place at CERN SPS. The sensors were exposed to a neutron fluence of 4*10e14, 8*1014, 1.5*10e15, 3*10e15, 6*10e15 neq/cm2 and to a proton fluence of 9.6*10e14 p/cm2, equivalent to a fluence of 6*10e14 neq/cm2. The internal gain and the timing resolution were measured as a function of bias voltage at -20C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both.
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Submitted 18 March, 2020; v1 submitted 15 April, 2018;
originally announced April 2018.
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Comparison of 35 and 50 μm thin HPK UFSD after neutron irradiation up to 6*10^15 neq/cm^2
Authors:
Y. Zhao,
N. Cartiglia,
E. Estrada,
Z. Galloway,
C. Gee,
A. Goto,
Z. Luce,
S. M. Mazza,
F. McKinney-Martinez,
R. Rodriguez,
H. F. -W. Sadrozinski,
A. Seiden V. Cindro,
G. Kramberger,
I. Mandić,
M. Mikuž,
M. Zavrtanik
Abstract:
We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 μm thick UFSD produced by HPK. The 35 μm thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irr…
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We report results from the testing of 35 μm thick Ultra-Fast Silicon Detectors (UFSD produced by Hamamatsu Photonics (HPK), Japan and the comparison of these new results to data reported before on 50 μm thick UFSD produced by HPK. The 35 μm thick sensors were irradiated with neutrons to fluences of 0, 1*10^14, 1*10^15, 3*10^15, 6*10^15 neq/cm^2. The sensors were tested pre-irradiation and post-irradiation with minimum ionizing particles (MIPs) from a 90Sr \b{eta}-source. The leakage current, capacitance, internal gain and the timing resolution were measured as a function of bias voltage at -20C and -27C. The timing resolution was extracted from the time difference with a second calibrated UFSD in coincidence, using the constant fraction method for both. Within the fluence range measured, the advantage of the 35 μm thick UFSD in timing accuracy, bias voltage and power can be established.
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Submitted 5 March, 2018;
originally announced March 2018.
