Showing 1–6 of 6 results for author: McRae, A C

Mechanical control of quantum transport in graphene

Authors: A. C. McRae, G. Wei, L. Huang, S. Yigen, V. Tayari, A. R. Champagne

Abstract: Two-dimensional materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain could completely turn off the conductivity of ballistic graphene or switch on/off the superconducting phase of magic-angle bilayer graphene. Here we report measurements of quantum transport… ▽ More Two-dimensional materials (2DMs) are fundamentally electro-mechanical systems. Their environment unavoidably strains them and modifies their quantum transport properties. For instance, a simple uniaxial strain could completely turn off the conductivity of ballistic graphene or switch on/off the superconducting phase of magic-angle bilayer graphene. Here we report measurements of quantum transport in strained graphene which agree quantitatively with models based on mechanically-induced gauge potentials. We mechanically induce in-situ a scalar potential, which modifies graphene's work function by up to 25 meV, and vector potentials which suppress the ballistic conductivity of graphene by up to 30 % and control its quantum interferences. To do so, we developed an experimental platform able to precisely tune both the mechanics and electrostatics of suspended graphene transistors at low-temperature over a broad range of strain (up to 2.6 %). This work opens many opportunities to experimentally explore quantitative strain effects in 2DM quantum transport and technologies. △ Less

Submitted 30 November, 2023; originally announced December 2023.

Journal ref: Adv. Mater.2024, 2313629

Graphene Quantum Strain Transistors

Authors: A. C. McRae, G. Wei, A. R. Champagne

Abstract: There is a wide range of science and applications accessible via the strain engineering of quantum transport in 2D materials. We propose a realistic experimental platform for uniaxial strain engineering of ballistic charge transport in graphene. We then develop an applied theoretical model, based on this platform, to calculate charge conductivity and demonstrate graphene quantum strain transistors… ▽ More There is a wide range of science and applications accessible via the strain engineering of quantum transport in 2D materials. We propose a realistic experimental platform for uniaxial strain engineering of ballistic charge transport in graphene. We then develop an applied theoretical model, based on this platform, to calculate charge conductivity and demonstrate graphene quantum strain transistors (GQSTs). We define GQSTs as mechanically strained ballistic graphene transistors with on/off conductivity ratios $> 10^{4}$, and which can be operated via modest gate voltages. Such devices would permit excellent transistor operations in pristine graphene, where there is no band gap. We consider all dominant uniaxial strain effects on conductivity, while including experimental considerations to guide the realization of the proposal. We predict multiple strain-tunable transport signatures, and demonstrate that a broad range of realistic device parameters lead to robust GQSTs. These devices could find applications in flexible electronic transistors, strain sensors, and valleytronics. △ Less

Submitted 25 September, 2018; originally announced September 2018.

Journal ref: Phys. Rev. Applied 11, 054019 (2019)

Giant Electron-hole Charging Energy Asymmetry in Ultra-short Carbon Nanotubes

Authors: A. C. McRae, V. Tayari, J. M. Porter, A. R. Champagne

Abstract: Making full usage of bipolar transport in single-wall carbon nanotube (SWCNT) transistors could permit the development of two-in-one quantum devices with ultra-short channels. We report on clean $\sim$10 to 100 nm long suspended SWCNT transistors which display a large electron-hole transport asymmetry. The devices consist of naked SWCNT channels contacted with sections of SWCNT-under-annealed-gold… ▽ More Making full usage of bipolar transport in single-wall carbon nanotube (SWCNT) transistors could permit the development of two-in-one quantum devices with ultra-short channels. We report on clean $\sim$10 to 100 nm long suspended SWCNT transistors which display a large electron-hole transport asymmetry. The devices consist of naked SWCNT channels contacted with sections of SWCNT-under-annealed-gold. The annealed gold acts as an n-doping top gate which creates nm-sharp barriers at the junctions between the contacts and naked channel. These tunnel barriers define a single quantum dot (QD) whose charging energies to add an electron or a hole are vastly different ($e-h$ charging energy asymmetry). We parameterize the $e-h$ transport asymmetry by the ratio of the hole and electron charging energies $η_{e-h}$. We show that this asymmetry is maximized for short channels and small band gap SWCNTs. In a small band gap SWCNT device, we demonstrate the fabrication of a two-in-one quantum device acting as a QD for holes, and a much longer quantum bus for electrons. In a 14 nm long channel, $η_{e-h}$ reaches up to 2.6 for a device with a band gap of 270 meV. This strong $e-h$ transport asymmetry survives even at room temperature. △ Less

Submitted 9 August, 2016; originally announced August 2016.

Journal ref: Nature Communications 8, 15491 (2017)

Tailoring 10 nm Scale Suspended Graphene Junctions and Quantum Dots

Authors: V. Tayari, A. C. McRae, S. Yigen, J. O. Island, J. M. Porter, A. R. Champagne

Abstract: The possibility to make 10 nm scale, and low-disorder, suspended graphene devices would open up many possibilities to study and make use of strongly coupled quantum electronics, quantum mechanics, and optics. We present a versatile method, based on the electromigration of gold-on-graphene bow-tie bridges, to fabricate low-disorder suspended graphene junctions and quantum dots with lengths ranging… ▽ More The possibility to make 10 nm scale, and low-disorder, suspended graphene devices would open up many possibilities to study and make use of strongly coupled quantum electronics, quantum mechanics, and optics. We present a versatile method, based on the electromigration of gold-on-graphene bow-tie bridges, to fabricate low-disorder suspended graphene junctions and quantum dots with lengths ranging from 6 nm up to 55 nm. We control the length of the junctions, and shape of their gold contacts by adjusting the power at which the electromigration process is allowed to avalanche. Using carefully engineered gold contacts and a nonuniform downward electrostatic force, we can controllably tear the width of suspended graphene channels from over 100 nm down to 27 nm. We demonstrate that this lateral confinement creates high-quality suspended quantum dots. This fabrication method could be extended to other two-dimensional materials. △ Less

Submitted 5 February, 2015; originally announced February 2015.

Journal ref: Nano Lett. 15, 114 (2015)

Few-hundred GHz Carbon Nanotube NEMS

Authors: J. O. Island, V. Tayari, A. C. McRae, A. R. Champagne

Abstract: We study 23 to 30 nm long suspended single-wall carbon nanotube quantum dots and observe both their stretching and bending vibrational modes. We use low-temperature DC electron transport to excite and measure the tubes' bending mode by making use of a positive feedback mechanism between their vibrations and the tunneling electrons. In these nano-electro-mechanical-systems (NEMS), we measure fundam… ▽ More We study 23 to 30 nm long suspended single-wall carbon nanotube quantum dots and observe both their stretching and bending vibrational modes. We use low-temperature DC electron transport to excite and measure the tubes' bending mode by making use of a positive feedback mechanism between their vibrations and the tunneling electrons. In these nano-electro-mechanical-systems (NEMS), we measure fundamental bending frequencies $f_{bend}\approx$ 75 - 280 GHz, and extract quality factors $Q \sim 10^{6}$. The NEMS' frequencies can be tuned by a factor of two with tension induced by mechanical breakjunctions actuated by an electrostatic force, or tension from bent suspended electrodes. △ Less

Submitted 13 August, 2012; originally announced August 2012.

Comments: Published in Nano Letters, 7 pages, 4 figures

Journal ref: Nano Letters 12, 4564-4569 (2012)

Ultra-short suspended single-wall carbon nanotube transistors

Authors: J. O. Island, V. Tayari, S. Yigen, A. C. McRae, A. R. Champagne

Abstract: We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $\approx$ 3 nm. We first align narrow gold bow-tie junctions on top of individual SWCNTs and suspend the devices. We then use a feedback-controlled electromigration to break the gold junctions and expose nm-sized sections of S… ▽ More We describe a method to fabricate clean suspended single-wall carbon nanotube (SWCNT) transistors hosting a single quantum dot ranging in length from a few 10s of nm down to $\approx$ 3 nm. We first align narrow gold bow-tie junctions on top of individual SWCNTs and suspend the devices. We then use a feedback-controlled electromigration to break the gold junctions and expose nm-sized sections of SWCNTs. We measure electron transport in these devices at low temperature and show that they form clean and tunable single-electron transistors. These ultra-short suspended transistors offer the prospect of studying THz oscillators with strong electron-vibron coupling. △ Less

Submitted 15 December, 2011; originally announced December 2011.

Journal ref: Applied Physics Letters 99, 243106 (2011)