Showing 1–35 of 35 results for author: Medhekar, N

Reactivity of ultra-thin Kagome Metal FeSn towards Oxygen and Water

Authors: James Blyth, Sadhana Sridhar, Mengting Zhao, Sajid Ali2, Thi Hai Yen Vu, Qile Li, Johnathon Maniatis, Grace Causer, Michael S. Fuhrer, Nikhil V. Medhekar, Anton Tadich, Mark Edmonds

Abstract: The kagome metal FeSn, consists of alternating layers of kagome-lattice Fe3Sn and honeycomb Sn2, and exhibits great potential for applications in future low energy electronics and spintronics because of an ideal combination of novel topological phases and high-temperature magnetic ordering. Robust synthesis methods for ultra-thin FeSn films, as well as an understanding of their air stability is cr… ▽ More The kagome metal FeSn, consists of alternating layers of kagome-lattice Fe3Sn and honeycomb Sn2, and exhibits great potential for applications in future low energy electronics and spintronics because of an ideal combination of novel topological phases and high-temperature magnetic ordering. Robust synthesis methods for ultra-thin FeSn films, as well as an understanding of their air stability is crucial for its development and long-term operation in future devices. In this work, we realize large area, sub-10 nm epitaxial FeSn thin films, and explore the oxidation process via synchrotron-based photoelectron spectroscopy using in-situ oxygen and water dosing, as well as ex-situ air exposure. Upon exposure to atmosphere the FeSn films are shown to be highly reactive, with a stable ~3 nm thick oxide layer forming at the surface within 10 minutes. Notably the surface Fe remains largely unoxidized when compared to Sn, which undergoes near-complete oxidation. This is further confirmed with controlled in-situ dosing of O2 and H2O where only the Sn2 (stanene) inter-layers within the FeSn lattice oxidize, suggesting the Fe3Sn kagome layers remain almost pristine. These results are in excellent agreement with first principles calculations, which show Fe-O bonds to the Fe3Sn layer are energetically unfavorable, and furthermore, a large formation energy preference of 1.37 eV for Sn-O bonds in the stanene Sn2 layer over Sn-O bonds in the kagome Fe3Sn layer. The demonstration that oxidation only occurs within the stanene layers may provide new avenues in how to engineer, handle and prepare future kagome metal devices. △ Less

Submitted 9 July, 2024; originally announced July 2024.

Comments: 21 pages, 5 figures, 4 SI figures

Electric Field Control of Molecular Charge State in a Single-Component 2D Organic Nanoarray

Authors: Dhaneesh Kumar, Cornelius Krull, Yuefeng Yin, Nikhil V. Medhekar, Agustin Schiffrin

Abstract: Quantum dots (QD) with electric-field-controlled charge state are promising for electronics applications, e.g., digital information storage, single-electron transistors and quantum computing. Inorganic QDs consisting of semiconductor nanostructures or heterostructures often offer limited control on size and composition distribution, as well as low potential for scalability and/or nanoscale miniatu… ▽ More Quantum dots (QD) with electric-field-controlled charge state are promising for electronics applications, e.g., digital information storage, single-electron transistors and quantum computing. Inorganic QDs consisting of semiconductor nanostructures or heterostructures often offer limited control on size and composition distribution, as well as low potential for scalability and/or nanoscale miniaturization. Owing to their tunability and self-assembly capability, using organic molecules as building nano-units can allow for bottom-up synthesis of two-dimensional (2D) nanoarrays of QDs. However, 2D molecular self-assembly protocols are often applicable on metals surfaces, where electronic hybridization and Fermi level pinning can hinder electric-field control of the QD charge state. Here, we demonstrate the synthesis of a single-component self-assembled 2D array of molecules [9, 10-dicyanoanthracene (DCA)] that exhibit electric-field-controlled spatially periodic charging on a noble metal surface, Ag(111). The charge state of DCA can be altered (between neutral and negative), depending on its adsorption site, by the local electric field induced by a scanning tunneling microscope tip. Limited metal-molecule interactions result in an effective tunneling barrier between DCA and Ag(111) that enables electric-field-induced electron population of the lowest unoccupied molecular orbital (LUMO) and hence charging of the molecule. Subtle site-dependent variation of the molecular adsorption height translates into a significant spatial modulation of the molecular polarizability, dielectric constant and LUMO energy level alignment, giving rise to a spatially dependent effective molecule-surface tunneling barrier and likelihood of charging. This work offers potential for high-density 2D self-assembled nanoarrays of identical QDs whose charge states can be addressed individually with an electric field. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Generic Approach to Intrinsic Magnetic Second-order Topological Insulators via Inverted $p-d$ Orbitals

Authors: Zhao Liu, Bing Liu, Yuefeng Yin, Nikhil V. Medhekar

Abstract: The integration of intrinsically magnetic and topologically nontrivial two-dimensional materials holds tantalizing prospects for the exotic quantum anomalous Hall insulators and magnetic second-order topological insulators (SOTIs). Compared with the well-studied nonmagnetic counterparts, the pursuit of intrinsic magnetic SOTIs remains limited. In this work, we address this gap by focusing on… ▽ More The integration of intrinsically magnetic and topologically nontrivial two-dimensional materials holds tantalizing prospects for the exotic quantum anomalous Hall insulators and magnetic second-order topological insulators (SOTIs). Compared with the well-studied nonmagnetic counterparts, the pursuit of intrinsic magnetic SOTIs remains limited. In this work, we address this gap by focusing on $p-d$ orbitals inversion, a fundamental but often overlooked phenomena in the construction of topological materials. We begin by developing a theoretical framework to elucidate $p-d$ orbitals inversion through a combined density-functional theory calculation and Wannier downfolding. Subsequently we showcase the generality of this concept in realizing ferromagnetism SOTIs by identifying two real materials with distinct lattices: 1$T$-VS$_2$ in a hexagonal lattice, and CrAs monolayer in a square lattice. We further compare it with other mechanisms requiring spin-orbit coupling and explore the similarities to topological Kondo insulators. Our findings establish a generic pathway towards intrinsic magnetic SOTIs. △ Less

Submitted 18 May, 2024; originally announced May 2024.

Comments: 4 figures, all comments are welcomed !

Cryogenic Thermal Shock Effects on Optical Properties of Quantum Emitters in Hexagonal Boron Nitride

Authors: Thi Ngoc Anh Mai, Sajid Ali, Md Shakhawath Hossain, Chaohao Chen, Lei Ding, Yongliang Chen, Alexander S. Solntsev, Hongwei Mou, Xiaoxue Xu, Nikhil Medhekar, Toan Trong Tran

Abstract: Solid-state quantum emitters are vital building blocks for quantum information science and quantum technology. Among various types of solid-state emitters discovered to date, color centers in hexagonal boron nitride have garnered tremendous traction in recent years thanks to their environmental robustness, high brightness and room-temperature operation. Most recently, these quantum emitters have b… ▽ More Solid-state quantum emitters are vital building blocks for quantum information science and quantum technology. Among various types of solid-state emitters discovered to date, color centers in hexagonal boron nitride have garnered tremendous traction in recent years thanks to their environmental robustness, high brightness and room-temperature operation. Most recently, these quantum emitters have been employed for satellite-based quantum key distribution. One of the most important requirements to qualify these emitters for space-based applications is their optical stability against cryogenic thermal shock. Such understanding has, however, remained elusive to date. Here, we report on the effects caused by such thermal shock which induces random, irreversible changes in the spectral characteristics of the quantum emitters. By employing a combination of structural characterizations and density functional calculations, we attribute the observed changes to lattice strains caused by the cryogenic temperature shock. Our study shed light on the stability of the quantum emitters under extreme conditions, similar to those countered in outer space. △ Less

Submitted 28 November, 2023; originally announced November 2023.

Quasi-free-standing AA-stacked bilayer graphene induced by calcium intercalation of the graphene-silicon carbide interface

Authors: Antonija Grubišić-Čabo, Jimmy C. Kotsakidis, Yuefeng Yin, Anton Tadich, Matthew Haldon, Sean Solari, John Riley, Eric Huwald, Kevin M. Daniels, Rachael L. Myers-Ward, Mark T. Edmonds, Nikhil Medhekar, D. Kurt Gaskill, Michael S. Fuhrer

Abstract: We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminatin… ▽ More We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminating SiC. As a consequence, the system becomes highly n-doped. Comparison to DFT calculations shows that the band dispersion, as determined by ARPES, deviates from the band structure expected for Bernal-stacked bilayer graphene. Instead, the electronic structure closely matches AA-stacked bilayer graphene on Ca-terminated SiC, indicating a spontaneous transition from AB- to AA-stacked bilayer graphene following calcium intercalation of the underlying graphene-SiC interface. △ Less

Submitted 4 November, 2023; originally announced November 2023.

Comments: 14 pages, 3 figures

Designing optoelectronic properties by on-surface synthesis: formation and electronic structure of an iron-terpyridine macromolecular complex

Authors: Agustin Schiffrin, Martina Capsoni, Gelareh Farahi, Chen-Guang Wang, Cornelius Krull, Marina Castelli, Tanya S. Roussy, Katherine A. Cochrane, Yuefeng Yin, Nikhil Medhekar, Adam Q. Shaw, Wei Ji, Sarah A. Burke

Abstract: Supramolecular chemistry protocols applied on surfaces offer compelling avenues for atomic scale control over organic-inorganic interface structures. In this approach, adsorbate-surface interactions and two-dimensional confinement can lead to morphologies and properties that differ dramatically from those achieved via conventional synthetic approaches. Here, we describe the bottom-up, on-surface s… ▽ More Supramolecular chemistry protocols applied on surfaces offer compelling avenues for atomic scale control over organic-inorganic interface structures. In this approach, adsorbate-surface interactions and two-dimensional confinement can lead to morphologies and properties that differ dramatically from those achieved via conventional synthetic approaches. Here, we describe the bottom-up, on-surface synthesis of one-dimensional coordination nanostructures based on an iron (Fe)-terpyridine (tpy) interaction borrowed from functional metal-organic complexes used in photovoltaic and catalytic applications. Thermally activated diffusion of sequentially deposited ligands and metal atoms, and intra-ligand conformational changes, lead to Fe-tpy coordination and formation of these nanochains. Low-temperature Scanning Tunneling Microscopy and Density Functional Theory were used to elucidate the atomic-scale morphology of the system, providing evidence of a linear tri-Fe linkage between facing, coplanar tpy groups. Scanning Tunneling Spectroscopy reveals highest occupied orbitals with dominant contributions from states located at the Fe node, and ligand states that mostly contribute to the lowest unoccupied orbitals. This electronic structure yields potential for hosting photo-induced metal-to-ligand charge transfer in the visible/near-infrared. The formation of this unusual tpy/tri-Fe/tpy coordination motif has not been observed for wet chemistry synthesis methods, and is mediated by the bottom-up on-surface approach used here. △ Less

Submitted 8 August, 2023; originally announced August 2023.

Gigantic Anisotropy of Self-Induced Spin-Orbit Torque in Weyl Ferromagnet Co2MnGa

Authors: Motomi Aoki, Yuefeng Yin, Simon Granville, Yao Zhang, Nikhil V. Medhekar, Livio Leiva, Ryo Ohshima, Yuichiro Ando, Masashi Shiraishi

Abstract: Spin-orbit torque (SOT) is receiving tremendous attention from both fundamental and application-oriented aspects. Co2MnGa, a Weyl ferromagnet that is in a class of topological quantum materials, possesses cubic-based high structural symmetry, the L21 crystal ordering, which should be incapable of hosting anisotropic SOT in conventional understanding. Here we show the discovery of a gigantic anisot… ▽ More Spin-orbit torque (SOT) is receiving tremendous attention from both fundamental and application-oriented aspects. Co2MnGa, a Weyl ferromagnet that is in a class of topological quantum materials, possesses cubic-based high structural symmetry, the L21 crystal ordering, which should be incapable of hosting anisotropic SOT in conventional understanding. Here we show the discovery of a gigantic anisotropy of self-induced SOT in Co2MnGa. The magnitude of the SOT is comparable to that of heavy metal/ferromagnet bilayer systems despite the high inversion symmetry of the Co2MnGa structure. More surprisingly, a sign inversion of the self-induced SOT is observed for different crystal axes. This finding stems from the interplay of the topological nature of the electronic states and their strong modulation by external strain. Our research enriches the understanding of the physics of self-induced SOT and demonstrates a versatile method for tuning SOT efficiencies in a wide range of materials for topological and spintronic devices. △ Less

Submitted 21 July, 2023; originally announced July 2023.

Comments: 15pages, 4figures (To appear Nano Lett.)

Journal ref: Nano Letters 23, 6951 (2023)

Local gate control of Mott metal-insulator transition in a 2D metal-organic framework

Authors: Benjamin Lowe, Bernard Field, Jack Hellerstedt, Julian Ceddia, Henry L. Nourse, Ben J. Powell, Nikhil V. Medhekar, Agustin Schiffrin

Abstract: Electron-electron interactions in materials lead to exotic many-body quantum phenomena including Mott metal-insulator transitions (MITs), magnetism, quantum spin liquids, and superconductivity. These phases depend on electronic band occupation and can be controlled via the chemical potential. Flat bands in two-dimensional (2D) and layered materials with a kagome lattice enhance electronic correlat… ▽ More Electron-electron interactions in materials lead to exotic many-body quantum phenomena including Mott metal-insulator transitions (MITs), magnetism, quantum spin liquids, and superconductivity. These phases depend on electronic band occupation and can be controlled via the chemical potential. Flat bands in two-dimensional (2D) and layered materials with a kagome lattice enhance electronic correlations. Although theoretically predicted, correlated-electron Mott insulating phases in monolayer 2D metal-organic frameworks (MOFs) with a kagome structure have not yet been realised experimentally. Here, we synthesise a 2D kagome MOF on a 2D insulator. Scanning tunnelling microscopy (STM) and spectroscopy reveal a MOF electronic energy gap of ~200 meV, consistent with dynamical mean field theory predictions of a Mott insulator. Combining template-induced (via work function variations of the substrate) and STM probe-induced gating, we locally tune the electron population of the MOF kagome bands and induce Mott MITs. These findings enable technologies based on electrostatic control of many-body quantum phases in 2D MOFs. △ Less

Submitted 1 May, 2024; v1 submitted 24 May, 2023; originally announced May 2023.

Comments: 34 pages, 4 figures + SI 53 pages, 33 figures

Journal ref: Nat Commun 15, 3559 (2024)

Enhanced Itinerant Ferromagnetism in Hole-doped Transition Metal Oxides: Beyond the Canonical Double Exchange Mechanism

Authors: Zhao Liu, Nikhil V. Medhekar

Abstract: Here we demonstrate the occurrence of robust itinerant ferromagnetism in Mott-Hubbard systems at both low and high doping concentrations. Specifically, we study the effect of hole doping on the experimentally synthesized LaCrAsO via first-principles calculations and observe that the parent G-type antiferromagnetism vanishes quickly at low doping concentration ($x$ $\sim$ 0.20) and the system becom… ▽ More Here we demonstrate the occurrence of robust itinerant ferromagnetism in Mott-Hubbard systems at both low and high doping concentrations. Specifically, we study the effect of hole doping on the experimentally synthesized LaCrAsO via first-principles calculations and observe that the parent G-type antiferromagnetism vanishes quickly at low doping concentration ($x$ $\sim$ 0.20) and the system becomes ferromagnetic metal due to the canonical double exchange (CDE) mechanism. As $x$ continues to increase, the onsite energy difference between Cr 3$d$ and As 4$p$ orbitals decreases and the system transitions to a ferromagnetic negative charge-transfer energy metal. Therefore, the itinerant ferromagnetism doesn't terminate at intermediate $x$ as CDE mechanism usually predicts. Furthermore, our calculations reveal that both nearest and next-nearest ferromagnetic exchange coupling strengths keep growing with $x$, showing that ferromagnetism caused by negative charge-transfer energy state is "stronger" than that of CDE picture. Our work not only unveils an alternative mechanism of itinerant ferromagnetism, but also has the potential to attract immediate interest among experimentalists. △ Less

Submitted 8 May, 2023; originally announced May 2023.

Comments: 6 pages, 3 figures, comments are welcomed

Journal ref: Nanoscale (2024)

Extracting unconventional spin texture in two dimensional topological crystalline insulator bismuthene via tuning bulk-edge interactions

Authors: Yuefeng Yin, Chutian Wang, Michael S. Fuhrer, Nikhil V. Medhekar

Abstract: Tuning the interaction between the bulk and edge states of topological materials is a powerful tool for manipulating edge transport behavior, opening up exciting opportunities for novel electronic and spintronic applications. This approach is particularly suited to topological crystalline insulators (TCI), a class of topologically nontrivial compounds that are endowed with multiple degrees of topo… ▽ More Tuning the interaction between the bulk and edge states of topological materials is a powerful tool for manipulating edge transport behavior, opening up exciting opportunities for novel electronic and spintronic applications. This approach is particularly suited to topological crystalline insulators (TCI), a class of topologically nontrivial compounds that are endowed with multiple degrees of topological protection. In this study, we investigate how bulk-edge interactions can influence the edge transport in planar bismuthene, a TCI with metallic edge states protected by in-plane mirror symmetry, using first principles calculations and symmetrized Wannier tight-binding models. By exploring the impact of various perturbation effects, such as device size, substrate potentials, and applied transverse electric field, we examine the evolution of the electronic structure and edge transport in planar bismuthene. Our findings demonstrate that the TCI states of planar bismuthene can be engineered to exhibit either a gapped or conducting unconventional helical spin texture via a combination of substrate and electric field effects. Furthermore, under strong electric fields, the edge states can be stabilized through a delicate control of the bulk-edge interactions. These results open up new directions for discovering novel spin transport patterns in topological materials and provide critical insights for the fabrication of topological spintronic devices. △ Less

Submitted 17 July, 2023; v1 submitted 28 April, 2023; originally announced April 2023.

Comments: 23 pages, 8 figures

Electrically Controlled Reversible Strain Modulation in MoS$_2$ Field-effect Transistors via an Electro-mechanically Coupled Piezoelectric Thin Film

Authors: Abin Varghese, Adityanarayan Pandey, Pooja Sharma, Yuefeng Yin, Nikhil Medhekar, Saurabh Lodha

Abstract: Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited by low thermal tolerance, lack of tunability and/or poor scalability. Here, we leverage the converse piezoelectric effect to electrically generate and control… ▽ More Strain can efficiently modulate the bandgap and carrier mobilities in two-dimensional (2D) materials. Conventional mechanical strain-application methodologies that rely on flexible, patterned or nano-indented substrates are severely limited by low thermal tolerance, lack of tunability and/or poor scalability. Here, we leverage the converse piezoelectric effect to electrically generate and control strain transfer from a piezoelectric thin film to electro-mechanically coupled ultra-thin 2D MoS$_2$. Electrical bias polarity change across the piezoelectric film tunes the nature of strain transferred to MoS$_2$ from compressive $\sim$0.23% to tensile $\sim$0.14% as verified through peak shifts in Raman and photoluminescence spectroscopies and substantiated by density functional theory calculations. The device architecture, built on a silicon substrate, uniquely integrates an MoS$_2$ field-effect transistor on top of a metal-piezoelectric-metal stack enabling strain modulation of transistor drain current 130$\times$, on/off current ratio 150$\times$, and mobility 1.19$\times$ with high precision, reversibility and resolution. Large, tunable tensile (1056) and compressive (-1498) strain gauge factors, easy electrical strain modulation, high thermal tolerance and substrate compatibility make this technique promising for integration with silicon-based CMOS and micro-electro-mechanical systems. △ Less

Submitted 25 April, 2023; originally announced April 2023.

Comments: Manuscript and Supplementary Information

Predicting the Early Stages of Solid-State Precipitation in Al-rich Al-Pt Alloys

Authors: Shenghan Su, Laure Bourgeois, Nikhil V. Medhekar

Abstract: The high strength of structural aluminium alloys depends strongly on the controlled precipitation of specific intermetallic phases, whose identity and crystal structure can be difficult to predict. Here, we investigate the Al-Pt system, which shows some similarity to the Al-Cu system as one of their main intermetallic phases, $Al_2Pt$, is nearly isostructural with $θ^{\prime} (Al_2Cu)$, the metast… ▽ More The high strength of structural aluminium alloys depends strongly on the controlled precipitation of specific intermetallic phases, whose identity and crystal structure can be difficult to predict. Here, we investigate the Al-Pt system, which shows some similarity to the Al-Cu system as one of their main intermetallic phases, $Al_2Pt$, is nearly isostructural with $θ^{\prime} (Al_2Cu)$, the metastable phase responsible for the high-strength of Al-Cu alloys. However, phases in Al-Pt alloys are complex and have not been studied in detail. Using a combination of density-functional theory (DFT) calculations and classical nucleation theory (CNT) applied to the Al-Pt system, we design a workflow to predict the thermodynamics of solid solution, intermediate phases such as GP zones, stable and metastable precipitates, and their precipitation sequence. This workflow can be applied to an arbitrary binary alloying system. We confirm the known stable phases $Al_4Pt$, $Al_{21}Pt_8$, $Al_2Pt$, $Al_3Pt_2$, $AlPt (α\& β)$, $Al_3Pt_5$, $AlPt_2 (α\& β)$ and $AlPt_3 (α\& β)$. We also reveal the possible existence of two phases of chemical formulae $Al_5Pt$ and $Al_3Pt$. This large number of intermetallic phases is due to the strong bonding between Al and Pt, which also leads to significant favourable Pt solute formation energy in the Al matrix. Our findings are compared with the known precipitation characteristics of the binary Al-Cu and Al-Au systems. We find that the $θ^{\prime}$-like $Al_2Pt$ precipitate phase has a lower coherent interfacial energy than $θ^{\prime}$. Our calculations strongly suggest that $Al_2Pt$ will precipitate first in Al-rich Al-Pt alloys and will form bulk-like interfaces similar to $η(Al_2Au)$ rather than like $θ^{\prime}(Al_2Cu)$. △ Less

Submitted 20 February, 2023; originally announced February 2023.

Comments: 32 pages, 9 figures in the main text. 12 pages, 7 figures in the supplementary inforamtion

Journal ref: Acta Materialia, p.119048 (2023)

Coherent backscattering in the topological Hall effect

Authors: Hong Liu, Rhonald Burgos Atencia, Nikhil Medhekar, Dimitrie Culcer

Abstract: The mutual interplay between electron transport and magnetism has attracted considerable attention in recent years, primarily motivated by strategies to manipulate magnetic degrees of freedom electrically, such as spin-orbit torques and domain wall motion. Within this field the topological Hall effect, which originates from scalar spin chirality, is an example of inter-band quantum coherence induc… ▽ More The mutual interplay between electron transport and magnetism has attracted considerable attention in recent years, primarily motivated by strategies to manipulate magnetic degrees of freedom electrically, such as spin-orbit torques and domain wall motion. Within this field the topological Hall effect, which originates from scalar spin chirality, is an example of inter-band quantum coherence induced by real-space inhomogeneous magnetic textures, and its magnitude depends on the winding number and chiral spin features that establish the total topological charge of the system. Remarkably, in the two decades since its discovery, there has been no research on the quantum correction to the topological Hall effect. Here we will show that, unlike the ordinary Hall effect, the inhomogeneous magnetization arising from the spin texture will give additional scattering terms in the kinetic equation, which result in a quantum correction to the topological Hall resistivity. We focus on 2D systems, where weak localization is strongest, and determine the complicated gradient corrections to the Cooperon and kinetic equation. Whereas the weak localization correction to the topological Hall effect is not large in currently known materials, we show that it is experimentally observable in dilute magnetic semiconductors. Our theoretical results will stimulate experiments on the topological Hall effect and fill the theoretical knowledge gap on weak localization corrections to transverse transport. △ Less

Submitted 20 December, 2022; originally announced December 2022.

Comments: Under review

Report number: Mater. Quantum Technol. 3 (2023) 025002

Correlation-induced magnetism in substrate-supported 2D metal-organic frameworks

Authors: Bernard Field, Agustin Schiffrin, Nikhil V. Medhekar

Abstract: Two-dimensional (2D) metal-organic frameworks (MOFs) in a kagome lattice can exhibit strong electron-electron interactions, which can lead to tunable quantum phases including many exotic magnetic phases. While technological developments of 2D MOFs typically take advantage of substrates for growth, support, and electrical contacts, investigations often ignore substrates and their dramatic influence… ▽ More Two-dimensional (2D) metal-organic frameworks (MOFs) in a kagome lattice can exhibit strong electron-electron interactions, which can lead to tunable quantum phases including many exotic magnetic phases. While technological developments of 2D MOFs typically take advantage of substrates for growth, support, and electrical contacts, investigations often ignore substrates and their dramatic influence on electronic properties of MOFs. Here, we show how substrates alter the correlated magnetic phases in kagome MOFs using systematic density functional theory and mean-field Hubbard calculations. We demonstrate that MOF-substrate coupling, MOF-substrate charge transfer, strain, and external electric fields are key variables, activating and deactivating magnetic phases in these materials. While we consider the example of kagome-arranged 9,10-dicyanoanthracene molecules coordinated with copper atoms, our findings should generalise to any kagome lattice. This work offers useful predictions for tunable interaction-induced magnetism in surface-supported 2D organic materials, opening the door to solid-state electronic and spintronic technologies based on such systems. △ Less

Submitted 9 October, 2022; v1 submitted 4 May, 2022; originally announced May 2022.

Comments: 29 pages, 16 figures (including supplementary information). Clarified several of our arguments, added extra panels to Supplementary Figure 10, clarified some figure legends (results unchanged)

Journal ref: npj Comput Mater 8, 227 (2022)

Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

Authors: Michael S. Fuhrer, Mark T. Edmonds, Dimitrie Culcer, Muhammad Nadeem, Xiaolin Wang, Nikhil Medhekar, Yuefeng Yin, Jared H Cole

Abstract: A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we p… ▽ More A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed. △ Less

Submitted 13 January, 2022; originally announced January 2022.

Comments: Accepted version of paper number 38-2 presented at the 67th Annual IEEE International Electron Devices Meeting (IEDM) on 15 December 2021

Near-Infrared and Visible-range Optoelectronics in 2D Hybrid Perovskite/Transition Metal Dichalcogenide Heterostructures

Authors: Abin Varghese, Yuefeng Yin, Mingchao Wang, Saurabh Lodha, Nikhil V. Medhekar

Abstract: The application of ultrathin two-dimensional (2D) perovskites in near-infrared and visible-range optoelectronics has been limited owing to their inherent wide bandgaps, large excitonic binding energies and low optical absorption at higher wavelengths. Here, we show that by tailoring interfacial band alignments via conjugation with low-dimensional materials like monolayer transition metal dichalcog… ▽ More The application of ultrathin two-dimensional (2D) perovskites in near-infrared and visible-range optoelectronics has been limited owing to their inherent wide bandgaps, large excitonic binding energies and low optical absorption at higher wavelengths. Here, we show that by tailoring interfacial band alignments via conjugation with low-dimensional materials like monolayer transition metal dichalcogenides (TMD), the functionalities of 2D perovskites can be extended to diverse, visible-range photophysical applications. Based on the choice of individual constituents in the 2D perovskite/TMD heterostructures, our first principles calculations demonstrate widely tunable type-II band gaps, carrier effective masses and band offsets to enable an effective separation of photogenerated excitons for enhanced photodetection and photovoltaic applications. In addition, we show the possibilities of achieving a type-I band alignment for recombination based light emitters as well as a type-III configuration for tunnelling devices. Further, we evaluate the effect of strain on the electronic properties of the heterostructures to show a significant strain tolerance, making them prospective candidates in flexible photosensors. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Comments: 38 pages, main manuscript and supporting information

Journal ref: Adv. Mater. Interfaces 2022, 2102174

Large bandgap quantum anomalous hall insulator in a designer ferromagnet-topological insulator-ferromagnet heterostructure

Authors: Qile Li, Chi Xuan Trang, Weikang Wu, Jinwoong Hwang, Nikhil Medhekar, Sung-Kwan Mo, Shengyuan A. Yang, Mark T Edmonds

Abstract: Combining magnetism and nontrivial band topology gives rise to quantum anomalous Hall (QAH) insulators and exotic quantum phases such as the QAH effect where current flows without dissipation along quantized edge states. Inducing magnetic order in topological insulators via proximity to a magnetic material offers a promising pathway towards achieving QAH effect at high temperature for lossless tra… ▽ More Combining magnetism and nontrivial band topology gives rise to quantum anomalous Hall (QAH) insulators and exotic quantum phases such as the QAH effect where current flows without dissipation along quantized edge states. Inducing magnetic order in topological insulators via proximity to a magnetic material offers a promising pathway towards achieving QAH effect at high temperature for lossless transport applications. One promising architecture involves a sandwich structure comprising two single layers of MnBi2Te4 (a 2D ferromagnetic insulator) with ultra-thin Bi2Te3 in the middle, and is predicted to yield a robust QAH insulator phase with a bandgap well above thermal energy at room temperature (25 meV). Here we demonstrate the growth of a 1SL MnBi2Te4 / 4QL Bi2Te3 /1SL MnBi2Te4 heterostructure via molecular beam epitaxy, and probe the electronic structure using angle resolved photoelectron spectroscopy. We observe strong hexagonally warped massive Dirac Fermions and a bandgap of 75 meV. The magnetic origin of the gap is confirmed by the observation of broken time reversal symmetry and the exchange-Rashba effect, in excellent agreement with density functional theory calculations. These findings provide insights into magnetic proximity effects in topological insulators, that will move lossless transport in topological insulators towards higher temperature. △ Less

Submitted 18 May, 2021; originally announced May 2021.

Comments: 24 pages

Manifestation of strongly correlated electrons in a 2D kagome metal-organic framework

Authors: Dhaneesh Kumar, Jack Hellerstedt, Bernard Field, Benjamin Lowe, Yuefeng Yin, Nikhil V. Medhekar, Agustin Schiffrin

Abstract: The kagome lattice, whose electronic valence band (VB) structure includes two Dirac bands and one flat band, offers a rich space to realise tuneable topological and strongly correlated electronic phases in two-dimensional (2D) and layered materials. While strong electron correlations have been observed in inorganic kagome crystals, they remain elusive in organic systems. The latter offer versatile… ▽ More The kagome lattice, whose electronic valence band (VB) structure includes two Dirac bands and one flat band, offers a rich space to realise tuneable topological and strongly correlated electronic phases in two-dimensional (2D) and layered materials. While strong electron correlations have been observed in inorganic kagome crystals, they remain elusive in organic systems. The latter offer versatile synthesis protocols via molecular self-assembly and metal-ligand coordination. Here, we report the synthesis of a 2D metal-organic framework (MOF) where di-cyano-anthracene (DCA) molecules form a kagome arrangement via coordination with copper (Cu) atoms on a silver surface [Ag(111)]. Low-temperature scanning tunnelling spectroscopy revealed Kondo screening--by the Ag(111) conduction electrons--of magnetic moments localised at Cu and DCA sites of the MOF. Density functional theory and mean-field Hubbard modelling show that these local moments emerge from strong interactions between kagome MOF electrons, enabling organic 2D materials as viable platforms for strongly correlated nanoelectronics and spintronics. △ Less

Submitted 23 April, 2021; originally announced April 2021.

Comments: Main text: 32 pages, 5 figures. Supplementary Information: 51 pages, 20 figures

Localized Wannier function based tight-binding models for two-dimensional allotropes of bismuth

Authors: Qile Li, Jackson S. Smith, Yuefeng Yin, Chutian Wang, Mykhailo V. Klymenko, Jared H. Cole, Nikhil V. Medhekar

Abstract: With its monoelemental composition, various crystalline forms and an inherently strong spin-orbit coupling, bismuth has been regarded as an ideal prototype material to expand our understanding of topological electronic structures. In particular, two-dimensional bismuth thin films have attracted a growing interest due to potential applications in topological transistors and spintronics. This calls… ▽ More With its monoelemental composition, various crystalline forms and an inherently strong spin-orbit coupling, bismuth has been regarded as an ideal prototype material to expand our understanding of topological electronic structures. In particular, two-dimensional bismuth thin films have attracted a growing interest due to potential applications in topological transistors and spintronics. This calls for an effective physical model to give an accurate interpretation of the novel topological phenomena shown by two-dimensional bismuth. However, the conventional semi-empirical approach of adapting bulk bismuth hoppings fails to capture the topological features of two-dimensional bismuth allotropes because the electronic band topology is heavily influenced by crystalline symmetries as well as atom spacings. Here we provide a new parameterization using localized Wannier functions derived from the Bloch states in first-principles calculations. We construct new tight-binding models for three types of two-dimensional bismuth allotropes: a Bi (111) bilayer, bismuthene and a Bi(110) bilayer. We demonstrate that our tight-binding models can successfully reproduce the band structures, symmetries and topological features of these two-dimensional allotropes. We anticipate that these models can be extended to other similar two-dimensional topological structures such as antimonene and arsenene. Moreover, these models can serve as a starting point for investigating the electron/spin transport and electromagnetic response in low-dimensional topological devices. △ Less

Submitted 22 February, 2021; originally announced February 2021.

Comments: 20 pages, 6 figures

Journal ref: New J. Phys. 23, 063042 (2021)

Thickness dependent tuning of the Berry curvature in a ferromagnetic Weyl semimetal

Authors: Yao Zhang, Yuefeng Yin, Guy Dubuis, Tane Butler, Nikhil V. Medhekar, Simon Granville

Abstract: Magnetic Weyl semimetals with spontaneously broken time-reversal symmetry exhibit a large intrinsic anomalous Hall effect originating from the Berry curvature. To employ this large Hall current for room temperature topo-spintronics applications, it is necessary to fabricate these materials as thin or ultrathin films. Here, we experimentally demonstrate that Weyl semimetal Co2MnGa thin films (20-50… ▽ More Magnetic Weyl semimetals with spontaneously broken time-reversal symmetry exhibit a large intrinsic anomalous Hall effect originating from the Berry curvature. To employ this large Hall current for room temperature topo-spintronics applications, it is necessary to fabricate these materials as thin or ultrathin films. Here, we experimentally demonstrate that Weyl semimetal Co2MnGa thin films (20-50 nm) show a very large anomalous Hall angle ~11.4% at low temperature and ~9.7% at room temperature, which can be ascribed to the nontrivial topology of the band structure with large intrinsic Berry curvature. However, the anomalous Hall angle decreases significantly with thicknesses below 20 nm, which band structure calculations confirm is due to the reduction of the majority spin contribution to the Berry curvature. Our results suggest that Co2MnGa is an excellent material to realize room temperature topo-spintronics applications, however the significant thickness dependence of the Berry curvature has important implications for thin film device design △ Less

Submitted 13 January, 2021; originally announced January 2021.

Journal ref: npj Quantum Mater. 6, 17 (2021)

Crossover from 2D ferromagnetic insulator to wide bandgap quantum anomalous Hall insulator in ultra-thin MnBi2Te4

Authors: Chi Xuan Trang, Qile Li, Yuefeng Yin, Jinwoong Hwang, Golrokh Akhgar, Iolanda Di Bernardo, Antonija Grubišić-Čabo, Anton Tadich, Michael S. Fuhrer, Sung- Kwan Mo, Nikhil Medhekar, Mark T. Edmonds

Abstract: Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum Anomalous Hall (QAH) effect and axion insulator phases have been realised. These observations occur at temperatures significantly lower than the Neel temperature o… ▽ More Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum Anomalous Hall (QAH) effect and axion insulator phases have been realised. These observations occur at temperatures significantly lower than the Neel temperature of bulk MnBi2Te4, and measurement of the magnetic energy gap at the Dirac point in ultra-thin MnBi2Te4 has yet to be achieved. Critical to achieving the promise of this system is a direct measurement of the layer-dependent energy gap and verifying whether the gap is magnetic in the QAH phase. Here we utilise temperature dependent angle-resolved photoemission spectroscopy to study epitaxial ultra-thin MnBi2Te4. We directly observe a layer dependent crossover from a 2D ferromagnetic insulator with a bandgap greater than 780 meV in one septuple layer (1 SL) to a QAH insulator with a large energy gap (>100 meV) at 8 K in 3 and 5 SL MnBi2Te4. The QAH gap is confirmed to be magnetic in origin, as it abruptly diminishes with increasing temperature above 8 K. The direct observation of a large magnetic energy gap in the QAH phase of few-SL MnBi2Te4 is promising for further increasing the operating temperature of QAH materials. △ Less

Submitted 16 March, 2021; v1 submitted 13 September, 2020; originally announced September 2020.

Journal ref: ACS Nano 2021, 15, 8, 13444-13452

Magnesium-intercalated graphene on SiC: highly n-doped air-stable bilayer graphene at extreme displacement fields

Authors: Antonija Grubišić-Čabo, Jimmy C. Kotsakidis, Yuefeng Yin, Anton Tadich, Matthew Haldon, Sean Solari, Iolanda di Bernardo, Kevin M. Daniels, John Riley, Eric Huwald, Mark T. Edmonds, Rachael Myers-Ward, Nikhil V. Medhekar, D. Kurt Gaskill, Michael S. Fuhrer

Abstract: We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-doping and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesiu… ▽ More We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-doping and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesium intercalation, the single massless Dirac band of epitaxial monolayer graphene is transformed into the characteristic massive double-band Dirac spectrum of quasi-freestanding bilayer graphene. Analysis of the spectrum using a simple tight binding model indicates that magnesium intercalation results in an n-type doping of 2.1 $\times$ 10$^{14}$ cm$^{-2}$, creates an extremely high displacement field of 2.6 V/nm, opening a considerable gap of 0.36 eV at the Dirac point. This is further confirmed by density-functional theory calculations for quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide, which show a similar doping level, displacement field and bandgap. Finally, magnesium-intercalated samples are surprisingly robust to ambient conditions; no significant changes in the electronic structure are observed after 30 minutes exposure in air. △ Less

Submitted 27 August, 2020; v1 submitted 6 May, 2020; originally announced May 2020.

Comments: 46 pages including supporting information, 4 figures in the main paper and 9 figures in the supporting information

Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface

Authors: Jimmy C. Kotsakidis, Antonija Grubišić-Čabo, Yuefeng Yin, Anton Tadich, Rachael L. Myers-Ward, Matthew Dejarld, Shojan P. Pavunny, Marc Currie, Kevin M. Daniels, Chang Liu, Mark T. Edmonds, Nikhil V. Medhekar, D. Kurt Gaskill, Amadeo L. Vazquez de Parga, Michael S. Fuhrer

Abstract: The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy… ▽ More The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy to elucidate the physical and electronic structure of both Ca- and Mg-intercalated epitaxial graphene on 6H-SiC(0001). We find that Ca intercalates underneath the buffer layer and bonds to the Si-terminated SiC surface, breaking the C-Si bonds of the buffer layer i.e. 'freestanding' the buffer layer to form Ca-intercalated quasi-freestanding bilayer graphene (Ca-QFSBLG). The situation is similar for the Mg-intercalation of epitaxial graphene on SiC(0001), where an ordered Mg-terminated reconstruction at the SiC surface and Mg bonds to the Si-terminated SiC surface are formed, resulting in Mg-intercalated quasi-freestanding bilayer graphene (Mg-QFSBLG). Ca-intercalation underneath the buffer layer has not been considered in previous studies of Ca-intercalated epitaxial graphene. Furthermore, we find no evidence that either Ca or Mg intercalates between graphene layers. However, we do find that both Ca-QFSBLG and Mg-QFSBLG exhibit very low workfunctions of 3.68 and 3.78 eV, respectively, indicating high n-type doping. Upon exposure to ambient conditions, we find Ca-QFSBLG degrades rapidly, whereas Mg-QFSBLG remains remarkably stable. △ Less

Submitted 13 July, 2020; v1 submitted 3 April, 2020; originally announced April 2020.

Comments: 58 pages, 10 figures, 4 tables. Revised text and figures

Near-direct bandgap $WSe_2$/$ReS_2$ type-II pn heterojunction for enhanced ultrafast photodetection and high-performance photovoltaics

Authors: Abin Varghese, Dipankar Saha, Kartikey Thakar, Vishwas Jindal, Sayantan Ghosh, Nikhil V Medhekar, Sandip Ghosh, Saurabh Lodha

Abstract: PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct bandgap at the heterointerface that can significantly enhance optical generation, for high light absorbing few/multi-layer vdW materials, has not yet been shown. In this work, for the first time, few-la… ▽ More PN heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct bandgap at the heterointerface that can significantly enhance optical generation, for high light absorbing few/multi-layer vdW materials, has not yet been shown. In this work, for the first time, few-layer group-6 transition metal dichalcogenide (TMD) $WSe_2$ is shown to form a sizeable (0.7 eV) near-direct bandgap with type-II band alignment at its interface with the group-7 TMD $ReS_2$ through density functional theory calculations. Further, the type-II alignment and photogeneration across the interlayer bandgap have been experimentally confirmed through micro-photoluminescence and IR photodetection measurements, respectively. High optical absorption in few-layer flakes, large conduction and valence band offsets for efficient electron-hole separation and stacking of light facing, direct bandgap $ReS_2$ on top of gate tunable $WSe_2$ are shown to result in excellent and tunable photodetection as well as photovoltaic performance through flake thickness dependent optoelectronic measurements. Few-layer flakes demonstrate ultrafast response time (5 $μ$s) at high responsivity (3 A/W) and large photocurrent generation and responsivity enhancement at the heterostructure overlap region (10-100X) for 532 nm laser illumination. Large open-circuit voltage of 0.64 V and short-circuit current of 2.6 $μ$A enables high output electrical power. Finally, long term air-stability and a facile single contact metal fabrication process makes the multi-functional few-layer $WSe_2$/$ReS_2$ heterostructure diode technologically promising for next-generation optoelectronic applications. △ Less

Submitted 27 October, 2019; originally announced October 2019.

Comments: Manuscript- 27 pages, 8 figures. Supporting Information- 17 pages, 17 figures

Electronic bandstructure of in-plane ferroelectric van der Waals $β'-In_{2}Se_{3}$

Authors: James L. Collins, Chutian Wang, Anton Tadich, Yuefeng Yin, Changxi Zheng, Jack Hellerstedt, Antonija Grubišić-Čabo, Shujie Tang, Sung-Kwan Mo, John Riley, Eric Huwald, Nikhil V. Medhekar, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $α$ and $β$' phases, respectively. In this work, we utilise angle-resolved photoelectron spectroscopy to directly measure the electronic bandstructure of $β'-In_{2}Se_{3}$, and compare to hybrid density functional theory (DFT) calculations. In agreement with DFT,… ▽ More Layered indium selenides ($In_{2}Se_{3}$) have recently been discovered to host robust out-of-plane and in-plane ferroelectricity in the $α$ and $β$' phases, respectively. In this work, we utilise angle-resolved photoelectron spectroscopy to directly measure the electronic bandstructure of $β'-In_{2}Se_{3}$, and compare to hybrid density functional theory (DFT) calculations. In agreement with DFT, we find the band structure is highly two-dimensional, with negligible dispersion along the c-axis. Due to n-type doping we are able to observe the conduction band minima, and directly measure the minimum indirect (0.97 eV) and direct (1.46 eV) bandgaps. We find the Fermi surface in the conduction band is characterized by anisotropic electron pockets with sharp in-plane dispersion about the $\overline{M}$ points, yielding effective masses of 0.21 $m_{0}$ along $\overline{KM}$ and 0.33 $m_{0}$ along $\overline{ΓM}$. The measured band structure is well supported by hybrid density functional theory calculations. The highly two-dimensional (2D) bandstructure with moderate bandgap and small effective mass suggest that $β'-In_{2}Se_{3}$ is a potentially useful new van der Waals semiconductor. This together with its ferroelectricity makes it a viable material for high-mobility ferroelectric-photovoltaic devices, with applications in non-volatile memory switching and renewable energy technologies. △ Less

Submitted 17 February, 2020; v1 submitted 14 October, 2019; originally announced October 2019.

Comments: 19 pages, 4 + 1 figures; typos corrected;added references; updated figures & discussion to reflect changes in model

Dirac-point photocurrents due to photothermoelectric effect in non-uniform graphene devices

Authors: Michael S. Fuhrer, Nikhil V. Medhekar

Abstract: Q. Ma et al.[1] recently reported a strong photocurrent associated with charge neutrality in graphene devices with non-uniform geometries, which they interpreted as an intrinsic photoresponse enhanced by the momentum non-relaxing nature of electron-electron collisions at charge neutrality. Here we argue that gradients in charge carrier density give rise to a photothermoelectric effect (PTE) which… ▽ More Q. Ma et al.[1] recently reported a strong photocurrent associated with charge neutrality in graphene devices with non-uniform geometries, which they interpreted as an intrinsic photoresponse enhanced by the momentum non-relaxing nature of electron-electron collisions at charge neutrality. Here we argue that gradients in charge carrier density give rise to a photothermoelectric effect (PTE) which is strongly peaked around charge neutrality, i.e. at p-n junctions, and such p-n junctions naturally arise at the edges of graphene devices due to fringing capacitance. Using known parameters, the PTE effect in the presence of charge density gradients predicts the sign, spatial distribution, gate voltage dependence, and temperature dependence of the photoresponse in non-uniform graphene devices, including predicting the observed sign change of the signal away from charge neutrality, and the non-monotonic temperature dependence, neither of which is explained by the intrinsic photocurrents in graphene. We propose future experiments which may disentangle the contributions of PTE and intrinsic photocurrent in graphene devices. △ Less

Submitted 13 May, 2019; originally announced May 2019.

Comments: Nat. Nanotechnol. (2020). Submitted as Matters Arising to Nature Nanotechnology regarding [1] Ma, Q. et al., "Giant intrinsic photoresponse in pristine graphene", Nature Nanotechnology 14, 145 (2019)

Selective Control of Surface Spin Current in Topological Materials based on Pyrite-type OsX2 (X = Se, Te) Crystals

Authors: Yuefeng Yin, Michael S. Fuhrer, Nikhil V. Medhekar

Abstract: Topological materials host robust surface states, which could form the basis for future electronic devices. As such states have spins that are locked to the momentum, they are of particular interest for spintronic applications. Understanding spin textures of the surface states of topologically nontrivial materials, and being able to manipulate their polarization, is therefore essential if they are… ▽ More Topological materials host robust surface states, which could form the basis for future electronic devices. As such states have spins that are locked to the momentum, they are of particular interest for spintronic applications. Understanding spin textures of the surface states of topologically nontrivial materials, and being able to manipulate their polarization, is therefore essential if they are to be utilized in future technologies. Here we use first-principles calculations to show that pyrite-type crystals OsX2 (X= Se, Te) are a class of topological material that can host surface states with spin polarization that can be either in-plane or out-of-plane. We show that the formation of low-energy states with symmetry-protected energy- and direction-dependent spin textures on the (001) surface of these materials is a consequence of a transformation from a topologically trivial to nontrivial state, induced by spin orbit interactions. The unconventional spin textures of these surface states feature an in-plane to out-of-plane spin polarization transition in the momentum space protected by local symmetries. Moreover, the surface spin direction and magnitude can be selectively filtered in specific energy ranges. Our demonstration of a new class of topological material with controllable spin textures provide a platform for experimentalists to detect and exploit unconventional surface spin textures in future spin-based nanoelectronic devices. △ Less

Submitted 4 September, 2019; v1 submitted 27 November, 2018; originally announced November 2018.

Journal ref: npj Quantum Materials 4, 47(2019)

Atomistic Mechanisms of Mg Insertion Reactions in Group XIV Anodes for Mg-Ion Batteries

Authors: Mingchao Wang, Jodie A. Yuwono, Vallabh Vasudevan, Nick Birbilis, Nikhil V. Medhekar

Abstract: Magnesium (Mg) metal has been widely explored as an anode material for Mg-ion batteries (MIBs) owing to its large specific capacity and dendrite-free operation. However critical challenges, such as the formation of passivation layers during battery operation and anode-electrolyte-cathode incompatibilities, limit the practical application of Mg-metal anodes for MIBs. Motivated by the promise of gro… ▽ More Magnesium (Mg) metal has been widely explored as an anode material for Mg-ion batteries (MIBs) owing to its large specific capacity and dendrite-free operation. However critical challenges, such as the formation of passivation layers during battery operation and anode-electrolyte-cathode incompatibilities, limit the practical application of Mg-metal anodes for MIBs. Motivated by the promise of group XIV elements (namely Si, Ge and Sn) as anodes for lithium- and sodium-ion batteries, here we conduct systematic first principles calculations to explore the thermodynamics and kinetics of group XIV anodes for Mg-ion batteries, and to identify the atomistic mechanisms of the electrochemical insertion reactions of Mg ions. We confirm the formation of amorphous MgxX phases (where X = Si, Ge, Sn) in anodes via the breaking of the stronger X-X bonding network replaced by weaker Mg-X bonding. Mg ions have higher diffusivities in Ge and Sn anodes than in Si, resulting from weaker Ge-Ge and Sn-Sn bonding networks. In addition, we identify thermodynamic instabilities of MgxX that require a small overpotential to avoid aggregation (plating) of Mg at anode/electrolyte interfaces. Such comprehensive first principles calculations demonstrate that amorphous Ge and crystalline Sn can be potentially effective anodes for practical applications in Mg-ion batteries. △ Less

Submitted 22 November, 2018; originally announced November 2018.

Comments: 29 pages, 6 figures

Tunable electronic properties of partially edge-hydrogenated armchair boron-nitrogen-carbon nanoribbons

Authors: Naresh Alaal, Nikhil Medhekar, Alok Shukla

Abstract: We employ first-principles calculations based density-functional-theory (DFT) approach to study electronic properties of partially and fully edge-hydrogenated armchair boron-nitrogen-carbon (BNC) nanoribbons (ABNCNRs), with widths between 0.85 nm to 2.3 nm. Due to the partial passivation of edges, electrons which do not participate in the bonding, form new energy states located near the Fermi-leve… ▽ More We employ first-principles calculations based density-functional-theory (DFT) approach to study electronic properties of partially and fully edge-hydrogenated armchair boron-nitrogen-carbon (BNC) nanoribbons (ABNCNRs), with widths between 0.85 nm to 2.3 nm. Due to the partial passivation of edges, electrons which do not participate in the bonding, form new energy states located near the Fermi-level. Because of these additional bands, some ABNCNRs exhibit metallic behavior, which is quite uncommon in armchair nanoribbons. Our calculations reveal that the metallic behavior is observed for the following passivation patterns: (i) when B atom from one edge, and N atom from another edge, are unpassivated. (ii) when N atoms from both the edges are unpassivated. (iii) when C atom from one edge, and N atom from another edge, are unpassivated. Furthermore, spin-polarization is also observed for certain passivation schemes, which is also quite uncommon for armchair nanoribbons. Thus, our results suggest that ABNCNRs exhibit a wide range of electronic and {magnetic }properties in that the fully edge-hydrogenated ABNCNRs are direct band gap semiconductors, while partially edge-hydrogenated ones are either semiconducting, or metallic, while simultaneously exhibiting spin polarization, based on the nature of passivation. We also find that the ribbons with larger widths are more stable, as compared to the narrower ones. △ Less

Submitted 8 March, 2018; originally announced March 2018.

Comments: 23 pages, 18 figures (main paper); 4 pages, 5 figures (supporting information), accepted for publication in Physical Chemistry Chemical Physics

The bi-layered precipitate phase zeta in the Al-Ag alloy system

Authors: Zezhong Zhang, Laure Bourgeois, Julian M. Rosalie, Nikhil V. Medhekar

Abstract: The Al-Ag system is thought to be a well-understood model system used to study diffusional phase transformations in alloys. Here we report the existence of a new precipitate phase, zeta, in this classical system using scanning transmission electron microscopy (STEM). The zeta phase has a modulated structure composed of alternating bilayers enriched in Al or Ag. Our in situ annealing experiments re… ▽ More The Al-Ag system is thought to be a well-understood model system used to study diffusional phase transformations in alloys. Here we report the existence of a new precipitate phase, zeta, in this classical system using scanning transmission electron microscopy (STEM). The zeta phase has a modulated structure composed of alternating bilayers enriched in Al or Ag. Our in situ annealing experiments reveal that the zeta phase is an intermediate precipitate phase between GP zones epsilon and gamma prime. First-principles calculations show that z is a local energy minimum state formed during Ag clustering in Al. The layered structure of zeta is analogous to the well-known Ag segregation at the precipitate-matrix interfaces when Ag is micro- alloyed in various aluminium alloys. △ Less

Submitted 15 May, 2017; originally announced May 2017.

Comments: This is the preprint before paper submission. Please refer to Acta Materialia for the final version of the paper, supplementary materials and movies. Link: http://www.sciencedirect.com/science/article/pii/S1359645417303555

Journal ref: Acta Materialia, Volume 132, 15 June 2017, Pages 525-537

From Half-metal to Semiconductor: Electron-correlation Effects in Zigzag SiC Nanoribbons From First Principles

Authors: Naresh Alaal, Vaideesh Loganathan, Nikhil Medhekar, Alok Shukla

Abstract: We performed electronic structure calculations based on the first-principles many-body theory approach in order to study quasiparticle band gaps, and optical absorption spectra of hydrogen-passivated zigzag SiC nanoribbons. Self-energy corrections are included using the GW approximation, and excitonic effects are included using the Bethe-Salpeter equation. We have systematically studied nanoribbon… ▽ More We performed electronic structure calculations based on the first-principles many-body theory approach in order to study quasiparticle band gaps, and optical absorption spectra of hydrogen-passivated zigzag SiC nanoribbons. Self-energy corrections are included using the GW approximation, and excitonic effects are included using the Bethe-Salpeter equation. We have systematically studied nanoribbons that have widths between 0.6 $\text{nm}$ and 2.2 $\text{nm}$. Quasiparticle corrections widened the Kohn-Sham band gaps because of enhanced interaction effects, caused by reduced dimensionality. Zigzag SiC nanoribbons with widths larger than 1 nm, exhibit half-metallicity at the mean-field level. The self-energy corrections increased band gaps substantially, thereby transforming the half-metallic zigzag SiC nanoribbons, to narrow gap spin-polarized semiconductors. Optical absorption spectra of these nanoribbons get dramatically modified upon inclusion of electron-hole interactions, and the narrowest ribbon exhibits strongly bound excitons, with binding energy of 2.1 eV. Thus, the narrowest zigzag SiC nanoribbon has the potential to be used in optoelectronic devices operating in the IR region of the spectrum, while the broader ones, exhibiting spin polarization, can be utilized in spintronic applications. △ Less

Submitted 20 June, 2017; v1 submitted 20 January, 2017; originally announced January 2017.

Comments: 22 pages, 6 figures (included)

Journal ref: Phys. Rev. Applied 7, 064009 (2017)

Tunable Hybridization Between Electronic States of Graphene and Physisorbed Hexacene

Authors: Yuefeng Yin, Jiri Cervenka, Nikhil V. Medhekar

Abstract: Non-covalent functionalization via physisorption of organic molecules provides a scalable approach for modifying the electronic structure of graphene while preserving its excellent carrier mobilities. Here we investigated the physisorption of long-chain acenes, namely, hexacene and its fluorinated derivative perfluorohexacene, on bilayer graphene for tunable graphene devices using first principles… ▽ More Non-covalent functionalization via physisorption of organic molecules provides a scalable approach for modifying the electronic structure of graphene while preserving its excellent carrier mobilities. Here we investigated the physisorption of long-chain acenes, namely, hexacene and its fluorinated derivative perfluorohexacene, on bilayer graphene for tunable graphene devices using first principles methods. We find that the adsorption of these molecules leads to the formation of localized states in the electronic structure of graphene close to its Fermi level, which could be readily tuned by an external electric field. The electric field not only creates a variable band gap as large as 250 meV in bilayer graphene, but also strongly influences the charge redistribution within the molecule-graphene system. This charge redistribution is found to be weak enough not to induce strong surface doping, but strong enough to help preserve the electronic states near the Dirac point of graphene. △ Less

Submitted 30 July, 2015; originally announced July 2015.

Comments: 17 pages, 7 figures, supporting information

Journal ref: J. Phys. Chem. C 2015, 119, 33, 19526

First principles many-body calculations of electronic structure and optical properties of SiC nanoribbons

Authors: Naresh Alaal, Vaideesh Loganathan, Nikhil Medhekar, Alok Shukla

Abstract: A first principles many-body approach is employed to calculate the band structure and optical response of nanometer sized ribbons of SiC. Many-body effects are incorporated using the GW approximation, and excitonic effects are included using the Bethe-Salpeter equation. Both unpassivated and hydrogen passivated armchair SiC nanoribbons are studied. As a consequence of low dimensionality, large qua… ▽ More A first principles many-body approach is employed to calculate the band structure and optical response of nanometer sized ribbons of SiC. Many-body effects are incorporated using the GW approximation, and excitonic effects are included using the Bethe-Salpeter equation. Both unpassivated and hydrogen passivated armchair SiC nanoribbons are studied. As a consequence of low dimensionality, large quasiparticle corrections are seen to the Kohn-Sham energy gaps. In both cases quasiparticle band gaps are increased by up to 2 eV, as compared to their Kohn-Sham energy values. Inclusion of electron-hole interactions modifies the absorption spectra significantly, giving rise to strongly bound excitonic peaks in these systems.The results suggest that hydrogen-passivated armchair SiC nanoribbons have the potential to be used in optoelectronic devices operating in the UV-Vis region of the spectrum. We also compute the formation energies of these nanoribbons as a function of their widths, and conclude that hydrogen-saturated ribbons will be much more stable as compared to the bare ones. △ Less

Submitted 23 February, 2016; v1 submitted 23 June, 2015; originally announced June 2015.

Comments: 18 pages, 7 figures (included)

Journal ref: J. Phys. D 49, 105306 (2016)

Energetics and kinetics of Li intercalation in irradiated graphene scaffolds

Authors: J. Song, B. Ouyang, N. V. Medhekar

Abstract: In the present study we investigate the irradiation-defects hybridized graphene scaffold as one potential building material for the anode of Li-ion batteries. Designating the Wigner V22 defect as a representative, we illustrate the interplay of Li atoms with the irradiation-defects in graphene scaffolds. We examine the adsorption energetics and diffusion kinetics of Li in the vicinity of a Wigner… ▽ More In the present study we investigate the irradiation-defects hybridized graphene scaffold as one potential building material for the anode of Li-ion batteries. Designating the Wigner V22 defect as a representative, we illustrate the interplay of Li atoms with the irradiation-defects in graphene scaffolds. We examine the adsorption energetics and diffusion kinetics of Li in the vicinity of a Wigner V22 defect using density functional theory calculations. The equilibrium Li adsorption sites at the defect are identified and shown to be energetically preferable to the adsorption sites on pristine (bilayer) graphene. Meanwhile the minimum energy paths and corresponding energy barriers for Li migration at the defect are determined and computed. We find that while the defect is shown to exhibit certain trapping effects on Li motions on the graphene surface, it appears to facilitate the interlayer Li diffusion and enhance the charge capacity within its vicinity because of the reduced interlayer spacing and characteristic symmetry associated with the defect. Our results provide critical assessment for the application of irradiated graphene scaffolds in Li-ion batteries. △ Less

Submitted 9 March, 2015; originally announced March 2015.

Comments: 23 pages, 5 figures

Journal ref: ACS Appl Mater Interfaces 2013 5 24 pp 12968

Bonding Charge Density and Ultimate Strength of Monolayer Transition Metal Dichalcogenides

Authors: Junwen Li, Nikhil V. Medhekar, Vivek B. Shenoy

Abstract: Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) can withstand a large deformation without fracture or inelastic relaxation, making them attractive for application in novel strain-engineered and flexible electronic and optoelectronic devices. In this study, we characterize the mechanical response of monolayer group VI TMDs to large elastic deformation using first-princip… ▽ More Two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) can withstand a large deformation without fracture or inelastic relaxation, making them attractive for application in novel strain-engineered and flexible electronic and optoelectronic devices. In this study, we characterize the mechanical response of monolayer group VI TMDs to large elastic deformation using first-principles density functional theory calculations. We find that the ultimate strength and the overall stress response of these 2D materials is strongly influenced by their chemical composition and loading direction. We demonstrate that differences in the observed mechanical behavior can be attributed to the spatial redistribution of the occupied hybridized electronic states in the region between the transition metal atom and the chalcogens. In spite of the strong covalent bonding between the transition metal and the chalcogens, we find that a simple linear relationship can be established to describe the dependence of the mechanical strength on the charge transfer from the transition metal atom to the chalcogens. △ Less

Submitted 28 March, 2013; originally announced March 2013.