Showing 1–3 of 3 results for author: Ncube, S
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Observation of spin-phonon coupling in GdCl3 filled carbon nanotubes
Authors:
S. Ncube,
R. Erasmus,
S. Bhattacharyya
Abstract:
The enhancement of spin-phonon coupling in gadolinium filled double walled carbon nanotubes (GdCl3@DWNTs) is demonstrated through temperature dependent magnetrometry and polarized Raman Spectroscopy (PRS). Temperature dependent susceptibility measurements show that the GdCl3@DWNTs undergo a superparamagnetic phase transion at temperatures below 100 K with a blocking temperature at approximately 47…
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The enhancement of spin-phonon coupling in gadolinium filled double walled carbon nanotubes (GdCl3@DWNTs) is demonstrated through temperature dependent magnetrometry and polarized Raman Spectroscopy (PRS). Temperature dependent susceptibility measurements show that the GdCl3@DWNTs undergo a superparamagnetic phase transion at temperatures below 100 K with a blocking temperature at approximately 47 K. From the temperature dependent PRS, it is observed that a distinct phonon hardening occurs for the G-band modes at temperatures close to the onset of the superparamagentic phase. This is in contract to pristine DWNTs where phonon modes saturates to a constant frequency at low temperatures. The abrupt increase in phonon frequency is indicative of a pronounced spin-phonon coupling. The enhanced coupling in the GdCl3@DWNTs is believed to occur due to resonance between nanotube phonon mode and spin flip frequency as temperature decreases.
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Submitted 4 June, 2019;
originally announced June 2019.
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Observation of impedance oscillations in single walled carbon nanotube bundles excited by high frequency signals
Authors:
George Chimowa,
Siphephile Ncube,
Somnath Bhattacharyya
Abstract:
We report experimental observation of impedance oscillations in single-walled carbon nanotubes measured from 100 MHz to 65 GHz on coplanar wave guides and a power law dependence of the differential conductance with bias voltage. From the crossover of the real and imaginary parts of the complex impedance observed in the range of 10 GHz, we estimate a long lifetime of 15 ps that can support the clai…
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We report experimental observation of impedance oscillations in single-walled carbon nanotubes measured from 100 MHz to 65 GHz on coplanar wave guides and a power law dependence of the differential conductance with bias voltage. From the crossover of the real and imaginary parts of the complex impedance observed in the range of 10 GHz, we estimate a long lifetime of 15 ps that can support the claim of ballistic transport. By measuring the scattering parameters at high-frequencies of a few aligned single-walled bundles at low temperatures we show that, this observation is strongly influenced by the number of tubes available.
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Submitted 10 April, 2015;
originally announced April 2015.
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Observation of Shubnikov de Haas and Aharanov-Bohm oscillations in silicon nanowires
Authors:
Tahir Aslan,
Davie Mtsuko,
Christopher Coleman,
Siphephile Ncube,
Somnath Bhattacharyya
Abstract:
We record fine oscillations of 20 to 60 mT superimposed on larger oscillations having periodicity ~ 2 T at temperatures up to 100 K and fields up to 10 T from silicon nanowires. Having confirmed that these features appear from the edge states associated with skipping orbits at nanowire edges and confined pure orbits in the interior of the nanowires we derive electron effective mass of 0.001 me to…
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We record fine oscillations of 20 to 60 mT superimposed on larger oscillations having periodicity ~ 2 T at temperatures up to 100 K and fields up to 10 T from silicon nanowires. Having confirmed that these features appear from the edge states associated with skipping orbits at nanowire edges and confined pure orbits in the interior of the nanowires we derive electron effective mass of 0.001 me to 0.006 me, carrier lifetime in the range 3 to 19 fs and carrier density that varies from 2x10^11 cm^-2 to 9x10^12 cm^-2. However, at low temperature the observed oscillation amplitude invariant of the field is attributed to not only a strong size confinement and the pinning of orbits by impurities but also Aharanov Bohm (AB) oscillations due to edge-states that propagate quasi-ballistically through the nanowire. The overall oscillation on a linear positive magnetoresistance background can be attributed to temperature-dependent crossover of Shubnikov de Haas oscillations (SdHO) and AB oscillations in silicon nanowires.
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Submitted 9 April, 2015;
originally announced April 2015.
