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Nano-optical investigation of grain boundaries, strain and edges in CVD grown MoS$_{2}$ monolayers
Authors:
Frederico B. Sousa,
Rafael Battistella Nadas,
Rafael Martins,
Ana P. M. Barboza,
Jaqueline S. Soares,
Bernardo R. A. Neves,
Ive Silvestre,
Ado Jorio,
Leandro M. Malard
Abstract:
The role of defects in two-dimensional semiconductors and how they affect the intrinsic properties of these materials have been a wide researched topic over the past decades. Optical characterization such as photoluminescence and Raman spectroscopies are important tools to probe their physical properties and the impact of defects. However, conventional optical techniques present a spatial resoluti…
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The role of defects in two-dimensional semiconductors and how they affect the intrinsic properties of these materials have been a wide researched topic over the past decades. Optical characterization such as photoluminescence and Raman spectroscopies are important tools to probe their physical properties and the impact of defects. However, conventional optical techniques present a spatial resolution limitation lying in a $μ$m-scale, which can be overcomed by the use of near-field optical measurements. Here, we use tip-enhanced photoluminescence and Raman spectroscopies to unveil nanoscale optical heterogeneities at grain boundaries, local strain fields and edges in grown MoS$_{2}$ monolayers. A noticeable enhancement of the exciton peak intensity corresponding to a trion emission quenching is observed at narrow regions down to 47 nm of width at grain boundaries related to doping effects. Besides, localized strain fields inside the sample lead to non-uniformities in the intensity and energy position of photoluminescence peaks. Finally, distinct samples present different nano-optical responses at their edges due to strain and passivation defects. The passivated defective edges show a photoluminescence intensity enhancement and energy blueshift as well as a frequency blueshift of the 2LA Raman mode. On the other hand, the strained edges display a photoluminescence energy redshift and frequency redshifts for E$_{2g}$ and 2LA Raman modes. Our work shows that different defect features can be only probed by using optical spectroscopies with a nanometric resolution, thus revealing hindered local impact of different nanoscale defects in two-dimensional materials.
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Submitted 22 January, 2024;
originally announced January 2024.
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Phyllosilicates as earth-abundant layered materials for electronics and optoelectronics: Prospects and challenges in their ultrathin limit
Authors:
Ingrid D. Barcelos,
Raphaela de Oliveira,
Gabriel R. Schleder,
Matheus J. S. Matos,
Raphael Longuinhos,
Jenaina Ribeiro-Soares,
Ana Paula M. Barboza,
Mariana C. Prado,
Elisângela S. Pinto,
Yara Galvão Gobato,
Hélio Chacham,
Bernardo R. A. Neves,
Alisson R. Cadore
Abstract:
Phyllosilicate minerals are an emerging class of naturally occurring layered insulators with large bandgap energy that have gained attention from the scientific community. This class of lamellar materials has been recently explored at the ultrathin two-dimensional level due to their specific mechanical, electrical, magnetic, and optoelectronic properties, which are crucial for engineering novel de…
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Phyllosilicate minerals are an emerging class of naturally occurring layered insulators with large bandgap energy that have gained attention from the scientific community. This class of lamellar materials has been recently explored at the ultrathin two-dimensional level due to their specific mechanical, electrical, magnetic, and optoelectronic properties, which are crucial for engineering novel devices (including heterostructures). Due to these properties, phyllosilicates minerals can be considered promising low-cost nanomaterials for future applications. In this Perspective article, we will present relevant features of these materials for their use in potential 2D-based electronic and optoelectronic applications, also discussing some of the major challenges in working with them.
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Submitted 24 August, 2023;
originally announced August 2023.
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Photoluminescence and charge transfer in the prototypical 2D/3D semiconductor heterostructure MoS$_2$/GaAs
Authors:
Rafael R. Rojas-Lopez,
Juliana C. Brant,
Maíra S. O. Ramos,
Túlio H. L. G. Castro,
Marcos H. D. Guimarães,
Bernardo R. A. Neves,
Paulo S. S. Guimarães
Abstract:
The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional (3D) semiconductors is an important challenge for the implementation of ultra-thin electronic devices. Recent observations have shown that by combining MoS$_2$ wit…
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The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional (3D) semiconductors is an important challenge for the implementation of ultra-thin electronic devices. Recent observations have shown that by combining MoS$_2$ with GaAs it is possible to develop high quality photodetectors and solar cells. Here, we present a study of the effects of intrinsic GaAs, p-doped GaAs, and n-doped GaAs substrates on the photoluminescence of monolayer MoS$_2$. We observe a decrease of an order of magnitude in the emission intensity of MoS$_2$ in all MoS$_2$/GaAs heterojunctions, when compared to a control sample consisting of a MoS$_2$ monolayer isolated from GaAs by a few layers of hexagonal boron nitride. We also see a dependence of the trion to A-exciton emission ratio in the photoluminescence spectra on the type of substrate, a dependence that we relate to the static charge exchange between MoS$_2$ and the substrates when the junction is formed. Scanning Kelvin probe microscopy measurements of the heterojunctions suggest type-I band alignments, so that excitons generated on the MoS$_2$ monolayer will be transferred to the GaAs substrate. Our results shed light on the charge exchange leading to band offsets in 2D/3D heterojunctions which play a central role in the understanding and further improvement of electronic devices.
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Submitted 3 December, 2021;
originally announced December 2021.
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Center of mass acceleration in coupled nanowaveguides due to transverse optical beating force
Authors:
Thales F. D. Fernandes,
Cauê K. M. C. Carvalho,
Paulo Sérgio S. Guimarães,
Bernardo R. A. Neves,
Pierre-Louis de Assis
Abstract:
Eigenmode optical forces arising in symmetrically coupled waveguides have opposite sign on opposite waveguides and thus can deform the waveguides by changing their relative separation, but cannot change any other degree of freedom on their own. It would be extremely desirable to have a way to act on the center of mass of such a system. In this work we show that it is possible to do so by injecting…
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Eigenmode optical forces arising in symmetrically coupled waveguides have opposite sign on opposite waveguides and thus can deform the waveguides by changing their relative separation, but cannot change any other degree of freedom on their own. It would be extremely desirable to have a way to act on the center of mass of such a system. In this work we show that it is possible to do so by injecting a superposition of eigenmodes that are degenerate in frequency and have opposite parity along the desired direction, resulting in beating forces that have the same sign on opposite waveguides and therefore act on the center of mass. We have used both the Maxwell Stress Tensor formalism and the induced dipole force equation to numerically calculate this transverse beating force and have found its magnitude to be comparable to the eigenmode forces. We also show that the longitudinal variation caused by the spatial beating pattern on the time-averaged quantities used in the calculations must be taken into account in order to properly employ the divergence theorem and obtain the correct magnitudes. We then propose a heuristic model that shows good quantitative agreement with the numerical results and may be used as a prototyping tool for accurate and fast computation without relying on expensive numerical computation.
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Submitted 18 October, 2017; v1 submitted 13 June, 2017;
originally announced June 2017.
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Magnetic reconfiguration of MnAs/GaAs(001) observed by Magnetic Force Microscopy and Resonant Soft X-ray Scattering
Authors:
L. N. Coelho,
R. Magalhães-Paniago,
B. R. A. Neves,
F. C. Vicentin,
H. Westfahl Jr.,
R. M. Fernandes,
F. Iikawa,
L. Däweritz,
C. Spezzani,
M. Sacchi
Abstract:
We investigated the thermal evolution of the magnetic properties of MnAs epitaxial films grown on GaAs(001) during the coexistence of hexagonal/orthorhombic phases using polarized resonant (magnetic) soft X-ray scattering and magnetic force microscopy. The results of the diffuse satellite X-ray peaks were compared to those obtained by magnetic force microscopy and suggest a reorientation of ferr…
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We investigated the thermal evolution of the magnetic properties of MnAs epitaxial films grown on GaAs(001) during the coexistence of hexagonal/orthorhombic phases using polarized resonant (magnetic) soft X-ray scattering and magnetic force microscopy. The results of the diffuse satellite X-ray peaks were compared to those obtained by magnetic force microscopy and suggest a reorientation of ferromagnetic terraces as temperature rises. By measuring hysteresis loops at these peaks we show that this reorientation is common to all ferromagnetic terraces. The reorientation is explained by a simple model based on the shape anisotropy energy. Demagnetizing factors were calculated for different configurations suggested by the magnetic images. We noted that the magnetic moments flip from an in-plane mono-domain orientation at lower temperatures to a three-domain out-of-plane configuration at higher temperatures. The transition was observed when the ferromagnetic stripe width L is equal to 2.9 times the film thickness d. This is in good agreement with the expected theoretical value of L = 2.6d.
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Submitted 15 May, 2006;
originally announced May 2006.
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X-ray method to study temperature-dependent stripe domains in MnAs/GaAs(001)
Authors:
R. Magalhaes-Paniago,
L. N. Coelho,
B. R. A. Neves,
H. Westfahl Jr.,
F. Iikawa,
L. Daweritz,
C. Spezzani,
M. Sacchi
Abstract:
MnAs films grown on GaAs (001) exhibit a progressive transition between hexagonal (ferromagnetic) and orthorhombic (paramagnetic) phases at wide temperature range instead of abrupt transition during the first-order phase transition. The coexistence of two phases is favored by the anisotropic strain arising from the constraint on the MnAs films imposed by the substrate. This phase coexistence occ…
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MnAs films grown on GaAs (001) exhibit a progressive transition between hexagonal (ferromagnetic) and orthorhombic (paramagnetic) phases at wide temperature range instead of abrupt transition during the first-order phase transition. The coexistence of two phases is favored by the anisotropic strain arising from the constraint on the MnAs films imposed by the substrate. This phase coexistence occurs in ordered arrangement alternating periodic terrace steps. We present here a method to study the surface morphology throughout this transition by means of specular and diffuse scattering of soft x-rays, tuning the photon energy at the Mn 2p resonance. The results show the long-range arrangement of the periodic stripe-like structure during the phase coexistence and its period remains constant, in agreement with previous results using other techniques.
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Submitted 22 September, 2004;
originally announced September 2004.
