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Formation of Mn-rich interfacial phases in Co2FexMn1-xSi thin films
Authors:
Ka Ming Law,
Arashdeep S. Thind,
Mihir Pendharkar,
Sahil J. Patel,
Joshua J. Phillips,
Chris J. Palmstrom,
Jaume Gazquez,
Albina Borisevich,
Rohan Mishra,
Adam J. Hauser
Abstract:
We report the formation of Mn-rich regions at the interface of Co2FexMn1-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum imaging reveals that each interfacial region: (1) is 1-2 nm wide, (2) occurs irrespective of the Fe/Mn composition ratio and in both Co-rich and Co-poor films, and…
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We report the formation of Mn-rich regions at the interface of Co2FexMn1-xSi thin films grown on GaAs substrates by molecular beam epitaxy (MBE). Scanning transmission electron microscopy (STEM) with electron energy loss (EEL) spectrum imaging reveals that each interfacial region: (1) is 1-2 nm wide, (2) occurs irrespective of the Fe/Mn composition ratio and in both Co-rich and Co-poor films, and (3) displaces both Co and Fe indiscriminately. We also observe a Mn-depleted region in each film directly above each Mn-rich interfacial layer, roughly 3 nm in width in the x = 0 and x = 0.3 films, and 1 nm in the x = 0.7 (less Mn) film. We posit that growth energetics favor Mn diffusion to the interface even when there is no significant Ga interdiffusion into the epitaxial film. Element-specific X-ray magnetic circular dichroism (XMCD) measurements show larger Co, Fe, and Mn orbital to spin magnetic moment ratios compared to bulk values across the Co2FexMn1-xSi compositional range. The values lie between reported values for pure bulk and nanostructured Co, Fe, and Mn materials, corroborating the non-uniform, layered nature of the material on the nanoscale. Finally, SQUID magnetometry demonstrates that the films deviate from the Slater-Pauling rule for uniform films of both the expected and the measured composition. The results inform a need for care and increased scrutiny when forming Mn-based magnetic thin films on III-V semiconductors like GaAs, particularly when films are on the order of 5 nm or when interface composition is critical to spin transport or other device applications.
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Submitted 24 December, 2023;
originally announced December 2023.
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Spin injection and detection up to room temperature in Heusler~alloy/$n$-GaAs spin valves
Authors:
T. A. Peterson,
S. J. Patel,
C. C. Geppert,
K. D. Christie,
A. Rath,
D. Pennachio,
M. E. Flatté,
P. M. Voyles,
C. J. Palmstrøm,
P. A. Crowell
Abstract:
We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $μ$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $μ$m spin diffusion length and applying a forward bias to the detector contact. Th…
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We have measured the spin injection efficiency and spin lifetime in Co$_2$FeSi/$n$-GaAs lateral nonlocal spin valves from 20 to 300 K. We observe large ($\sim$40 $μ$V) spin valve signals at room temperature and injector currents of $10^3~$A/cm$^2$, facilitated by fabricating spin valve separations smaller than the 1 $μ$m spin diffusion length and applying a forward bias to the detector contact. The spin transport parameters are measured by comparing the injector-detector contact separation dependence of the spin valve signal with a numerical model accounting for spin drift and diffusion. The apparent suppression of the spin injection efficiency at the lowest temperatures reflects a breakdown of the ordinary drift-diffusion model in the regime of large spin accumulation. A theoretical calculation of the D'yakonov-Perel spin lifetime agrees well with the measured $n$-GaAs spin lifetime over the entire temperature range.
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Submitted 12 October, 2016;
originally announced October 2016.
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Surface reconstructions and transport of epitaxial PtLuSb (001) thin films grown by MBE
Authors:
S. J. Patel,
J. A. Logan,
S. D. Harrington,
B. D. Schultz,
C. J. Palmstrøm
Abstract:
This work presents the surface reconstructions and transport properties of the topological insulator PtLuSb grown on Al0.1In0.9Sb/GaAs (001). Two stable surface reconstructions, (1x3) and c(2x2), were observed on PtLuSb (001) surfaces. Antimony-dimerization was determined to be the nature of the (1x3) surface reconstruction as evidenced by chemical binding energy shifts in the antimony 4d core-lev…
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This work presents the surface reconstructions and transport properties of the topological insulator PtLuSb grown on Al0.1In0.9Sb/GaAs (001). Two stable surface reconstructions, (1x3) and c(2x2), were observed on PtLuSb (001) surfaces. Antimony-dimerization was determined to be the nature of the (1x3) surface reconstruction as evidenced by chemical binding energy shifts in the antimony 4d core-level for surface bonding components. The two surface reconstructions were studied as a function of Sb4 overpressure and substrate temperature to create a reconstruction phase diagram. From this reconstruction phase diagram, a growth window from 320 °C to 380 °C using an antimony overpressure was identified. Within this window, the highest quality films were grown at a growth temperature of 380 °C. These films exhibited lower p-type carrier concentrations as well as relatively high hole mobilities.
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Submitted 17 November, 2015; v1 submitted 16 November, 2015;
originally announced November 2015.
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Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films
Authors:
J. A. Logan,
S. J. Patel,
S. D. Harrington,
C. M. Polley,
B. D. Schultz,
T. Balasubramanian,
A. Janotti,
A. Mikkelsen,
C. J. Palmstrøm
Abstract:
The discovery of topological insulators (TIs), materials with bulk band gaps and protected cross-gap surface states, in compounds such as Bi2Se3 has generated much interest in identifying topological surface states (TSSs) in other classes of materials. In particular, recent theory calculations suggest that TSSs may be found in half-Heusler ternary compounds. If experimentally realizable, this woul…
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The discovery of topological insulators (TIs), materials with bulk band gaps and protected cross-gap surface states, in compounds such as Bi2Se3 has generated much interest in identifying topological surface states (TSSs) in other classes of materials. In particular, recent theory calculations suggest that TSSs may be found in half-Heusler ternary compounds. If experimentally realizable, this would provide a materials platform for entirely new heterostructure spintronic devices that make use of the structurally-identical but electronically-varied nature of Heusler compounds. Here, we show the presence of a TSS in epitaxially grown thin films of the half-Heusler compound PtLuSb. Spin and angle-resolved photoemission spectroscopy (ARPES), complemented by theoretical calculations, reveals a surface state with linear dispersion and a helical tangential spin texture consistent with previous predictions. This experimental verification of TI behavior is a significant step forward in establishing half-Heusler compounds as a viable material system for future spintronics devices.
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Submitted 18 November, 2015; v1 submitted 15 November, 2015;
originally announced November 2015.
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Anisotropic spin relaxation in $n$-GaAs from strong inhomogeneous hyperfine fields produced by the dynamical polarization of nuclei
Authors:
N. J. Harmon,
T. A. Peterson,
C. C. Geppert,
S. J. Patel,
C. J. Palmstrøm,
P. A. Crowell,
M. E. Flatté
Abstract:
The hyperfine field from dynamically polarized nuclei in n-GaAs is very spatially inhomogeneous, as the nu- clear polarization process is most efficient near the randomly-distributed donors. Electrons with polarized spins traversing the bulk semiconductor will experience this inhomogeneous hyperfine field as an effective fluctuating spin precession rate, and thus the spin polarization of an electr…
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The hyperfine field from dynamically polarized nuclei in n-GaAs is very spatially inhomogeneous, as the nu- clear polarization process is most efficient near the randomly-distributed donors. Electrons with polarized spins traversing the bulk semiconductor will experience this inhomogeneous hyperfine field as an effective fluctuating spin precession rate, and thus the spin polarization of an electron ensemble will relax. A theory of spin relaxation based on the theory of random walks is applied to such an ensemble precessing in an oblique magnetic field, and the precise form of the (unequal) longitudinal and transverse spin relaxation analytically derived. To investigate this mechanism, electrical three-terminal Hanle measurements were performed on epitaxially grown Co$_2$MnSi/$n$-GaAs heterostructures fabricated into electrical spin injection devices. The proposed anisotropic spin relaxation mechanism is required to satisfactorily describe the Hanle lineshapes when the applied field is oriented at large oblique angles.
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Submitted 10 August, 2015;
originally announced August 2015.
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Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance
Authors:
Changjiang Liu,
Sahil J. Patel,
Timothy A. Peterson,
Chad C. Geppert,
Kevin D. Christie,
Chris J. Palmstrøm,
Paul A. Crowell
Abstract:
A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is precession of the non-equilibrium spin population of the semiconductor in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become less effective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been…
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A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is precession of the non-equilibrium spin population of the semiconductor in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become less effective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet (the spin injector and detector) to precess at the ferromagnetic resonance frequency, an electrically generated spin accumulation can be detected from 30 to 300 K. At low temperatures, the distinct Larmor precession of the spin accumulation in the semiconductor can be detected by ferromagnetic resonance in an oblique field. We verify the effectiveness of this new spin detection technique by comparing the injection bias and temperature dependence of the measured spin signal to the results obtained using traditional methods. We further show that this new approach enables a measurement of short spin lifetimes (< 100 psec), a regime that is not accessible in semiconductors using traditional Hanle techniques.
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Submitted 9 August, 2015;
originally announced August 2015.
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Knight shift and nuclear spin relaxation in Fe/n-GaAs heterostructures
Authors:
Kevin D. Christie,
Chad C. Geppert,
Sahil J. Patel,
Q. O. Hu,
Chris J. Palmstrøm,
Paul A. Crowell
Abstract:
We investigate the dynamically polarized nuclear-spin system in Fe/\emph{n}-GaAs heterostructures using the response of the electron-spin system to nuclear magnetic resonance (NMR) in lateral spin-valve devices. The hyperfine interaction is known to act more strongly on donor-bound electron states than on those in the conduction band. We provide a quantitative model of the temperature dependence o…
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We investigate the dynamically polarized nuclear-spin system in Fe/\emph{n}-GaAs heterostructures using the response of the electron-spin system to nuclear magnetic resonance (NMR) in lateral spin-valve devices. The hyperfine interaction is known to act more strongly on donor-bound electron states than on those in the conduction band. We provide a quantitative model of the temperature dependence of the occupation of donor sites. With this model we calculate the ratios of the hyperfine and quadrupolar nuclear relaxation rates of each isotope. For all temperatures measured, quadrupolar relaxation limits the spatial extent of nuclear spin-polarization to within a Bohr radius of the donor sites and is directly responsible for the isotope dependence of the measured NMR signal amplitude. The hyperfine interaction is also responsible for the $2\text{ kHz}$ Knight shift of the nuclear resonance frequency that is measured as a function of the electron spin accumulation. The Knight shift is shown to provide a measurement of the electron spin-polarization that agrees qualitatively with standard spin transport measurements.
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Submitted 19 October, 2015; v1 submitted 2 June, 2014;
originally announced June 2014.
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Electromotive Force Generated by Spin Accumulation in FM/$n$-GaAs Heterostructures
Authors:
Chad C. Geppert,
Lee R. Wienkes,
Kevin D. Christie,
Sahil J. Patel,
Chris J. Palmstrøm,
Paul A. Crowell
Abstract:
We report on a method of quantifying spin accumulation in Co$_{2}$MnSi/$n$-GaAs and Fe/$n$-GaAs heterostructures using a non-magnetic probe. In the presence of a large non-equilibrium spin polarization, the combination of a non-constant density of states and energy-dependent conductivity generates an electromotive force (EMF). We demonstrate that this signal dephases in the presence of applied and…
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We report on a method of quantifying spin accumulation in Co$_{2}$MnSi/$n$-GaAs and Fe/$n$-GaAs heterostructures using a non-magnetic probe. In the presence of a large non-equilibrium spin polarization, the combination of a non-constant density of states and energy-dependent conductivity generates an electromotive force (EMF). We demonstrate that this signal dephases in the presence of applied and hyperfine fields, scales quadratically with the polarization, and is comparable in magnitude to the spin-splitting. Since this spin-generated EMF depends only on experimentally accessible parameters of the bulk material, its magnitude may be used to quantify the injected spin polarization in absolute terms.
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Submitted 11 February, 2014;
originally announced February 2014.
