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Site- and Energy-Selective Low-Energy Electron Emission by X-Rays in Aqueous Phase
Authors:
Dana Bloß,
Rémi Dupuy,
Florian Trinter,
Isaak Unger,
Noelle Walsh,
Gunnar Öhrwall,
Niklas Golchert,
Gabriel Klassen,
Adrian Krone,
Yusaku Terao,
Johannes H. Viehmann,
Lasse Wülfing,
Clemens Richter,
Tillmann Buttersack,
Lorenz S. Cederbaum,
Uwe Hergenhahn,
Olle Björneholm,
Arno Ehresmann,
Andreas Hans
Abstract:
Low-energy-electron emission from resonant Auger final states via intermolecular Coulombic decay (RA-ICD) has been previously described as a promising scenario for controlling radiation damage for medical purposes, but has so far only been observed in prototypical atomic and molecular van der Waals dimers and clusters. Here, we report the experimental observation of RA-ICD in aqueous solution. We…
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Low-energy-electron emission from resonant Auger final states via intermolecular Coulombic decay (RA-ICD) has been previously described as a promising scenario for controlling radiation damage for medical purposes, but has so far only been observed in prototypical atomic and molecular van der Waals dimers and clusters. Here, we report the experimental observation of RA-ICD in aqueous solution. We show that for solvated Ca$^{2+}$ ions, the emission can be very efficiently controlled by tuning the photon energy of exciting X-rays to inner-shell resonances of the ions. Our results provide the next step from proving RA-ICD in relatively simple prototype systems to understanding the relevance and potential applications of ICD in real-life scenarios.
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Submitted 22 August, 2024;
originally announced August 2024.
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Self-affinity of discs under glass-cut dissections
Authors:
Christian Richter
Abstract:
A topological disc is called $n$-self-affine if it has a dissection into $n$ affine images of itself. It is called $n$-gc-self-affine if the dissection is obtained by successive glass-cuts, which are cuts along segments splitting one disc into two. For every $n \ge 2$, we characterize all $n$-gc-self-affine discs. All such discs turn out to be either triangles or convex quadrangles. All triangles…
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A topological disc is called $n$-self-affine if it has a dissection into $n$ affine images of itself. It is called $n$-gc-self-affine if the dissection is obtained by successive glass-cuts, which are cuts along segments splitting one disc into two. For every $n \ge 2$, we characterize all $n$-gc-self-affine discs. All such discs turn out to be either triangles or convex quadrangles. All triangles and trapezoids are $n$-gc-self-affine for every $n$. Non-trapezoidal quadrangles are not $n$-gc-self-affine for even $n$. They are $n$-gc-self-affine for every odd $n \ge 7$, and they are $n$-gc-self-affine for $n=5$ if they aren't affine kites. Only four one-parameter families of quadrangles turn out to be $3$-gc-self-affine.
In addition, we show that every convex quadrangle is $n$-self-affine for all $n \ge 5$.
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Submitted 17 April, 2024;
originally announced April 2024.
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Quantum Hall Transport Measurements of Lateral p-n Junctions Formed via Precise Spatial Photodoping of Graphene/hBN Heterostructures
Authors:
Son T. Le,
Thuc T. Mai,
Maria F. Munoz,
Angela R. Hight Walker,
Curt A. Richter,
Aubrey T. Hanbicki,
Adam L. Friedman
Abstract:
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped in-operando, reproducibly and reversibly. We demonstrate device geometries with spatially-defined doping type and magnitude. After each optical doping procedure, mag…
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Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped in-operando, reproducibly and reversibly. We demonstrate device geometries with spatially-defined doping type and magnitude. After each optical doping procedure, magnetotransport measurements including quantum Hall measurements are performed to characterize the device performance. In the unipolar (p+-p-p+ and n-n+-n) configurations, we observe quantization of the longitudinal resistance, proving well-defined doped regions and interfaces that are further analyzed by Landauer-Buttiker modeling. Our unique measurements and modeling of these optically doped devices reveal a complete separation of the p- and n-Landau level edge states. The non-interaction of the edge states results in an observed "insulating" state in devices with a bi-polar p-n-p configuration that is uncommon and has not been measured previously in graphene devices. This insulating state could be utilized in high-performance graphene electrical switches. These quantitative magnetotransport measurements confirm that these doping techniques can be applied to any 2D materials encapsulated within hBN layers, enabling versatile, rewritable circuit elements for future computing and memory applications.
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Submitted 3 June, 2024; v1 submitted 4 March, 2024;
originally announced March 2024.
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Parallel Program Analysis on Path Ranges
Authors:
Jan Haltermanna,
Marie-Christine Jakobs,
Cedric Richter,
Heike Wehrheim
Abstract:
Symbolic execution is a software verification technique symbolically running programs and thereby checking for bugs. Ranged symbolic execution performs symbolic execution on program parts, so called path ranges, in parallel. Due to the parallelism, verification is accelerated and hence scales to larger programs.
In this paper, we discuss a generalization of ranged symbolic execution to arbitrary…
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Symbolic execution is a software verification technique symbolically running programs and thereby checking for bugs. Ranged symbolic execution performs symbolic execution on program parts, so called path ranges, in parallel. Due to the parallelism, verification is accelerated and hence scales to larger programs.
In this paper, we discuss a generalization of ranged symbolic execution to arbitrary program analyses. More specifically, we present a verification approach that splits programs into path ranges and then runs arbitrary analyses on the ranges in parallel. Our approach in particular allows to run different analyses on different program parts. We have implemented this generalization on top of the tool CPAchecker and evaluated it on programs from the SV-COMP benchmark. Our evaluation shows that verification can benefit from the parallelisation of the verification task, but also needs a form of work stealing (between analyses) as to become efficient
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Submitted 16 May, 2024; v1 submitted 19 February, 2024;
originally announced February 2024.
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Can ChatGPT support software verification?
Authors:
Christian Janßen,
Cedric Richter,
Heike Wehrheim
Abstract:
Large language models have become increasingly effective in software engineering tasks such as code generation, debugging and repair. Language models like ChatGPT can not only generate code, but also explain its inner workings and in particular its correctness. This raises the question whether we can utilize ChatGPT to support formal software verification.
In this paper, we take some first steps…
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Large language models have become increasingly effective in software engineering tasks such as code generation, debugging and repair. Language models like ChatGPT can not only generate code, but also explain its inner workings and in particular its correctness. This raises the question whether we can utilize ChatGPT to support formal software verification.
In this paper, we take some first steps towards answering this question. More specifically, we investigate whether ChatGPT can generate loop invariants. Loop invariant generation is a core task in software verification, and the generation of valid and useful invariants would likely help formal verifiers. To provide some first evidence on this hypothesis, we ask ChatGPT to annotate 106 C programs with loop invariants. We check validity and usefulness of the generated invariants by passing them to two verifiers, Frama-C and CPAchecker. Our evaluation shows that ChatGPT is able to produce valid and useful invariants allowing Frama-C to verify tasks that it could not solve before. Based on our initial insights, we propose ways of combining ChatGPT (or large language models in general) and software verifiers, and discuss current limitations and open issues.
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Submitted 4 November, 2023;
originally announced November 2023.
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Nature of the metallic and in-gap states in Ni-doped SrTiO$_3$
Authors:
Fatima Alarab,
Karol Hricovini,
Berengar Leikert,
Christine Richter,
Thorsten Schmitt,
Michael Sing,
Ralph Claessen,
Ján Minár,
Vladimir N. Strocov
Abstract:
Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni doping shifts the valence band (VB) of pristine SrTiO$_3$ towards the Fermi level (p-doping) and reduces its band gap. This is accompanied by an upward energy shift of the Ti t2g-derived mobile electron system (…
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Epitaxial thin films of SrTiO$_3$(100) doped with 6% and 12% Ni are studied with resonant angle-resolved photoelectron spectroscopy (ARPES) at the Ti and Ni L2,3-edges. We find that the Ni doping shifts the valence band (VB) of pristine SrTiO$_3$ towards the Fermi level (p-doping) and reduces its band gap. This is accompanied by an upward energy shift of the Ti t2g-derived mobile electron system (MES). Thereby, the in-plane dxy-derived bands reduce the embedded electron density, as evidenced by progressive reduction of their Fermi momentum with the Ni concentration, and the out-of-plane dxz/yz-derived bands depopulate, making the MES purely two-dimensional. Furthermore, the Ti and Ni L2,3-edge resonant photoemission is used to identify the Ni 3d impurity state in the vicinity of the valence-band maximum, and decipher the full spectrum of the VO-induced in-gap states originating from the Ni atoms, Ti atoms, and from their hybridized orbitals. Our experimental information about the dependence of the valence bands, MES and in-gap states in Ni-doped SrTiO$_3$ may help development of this material towards its device applications associated with the reduced optical band gap.
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Submitted 19 October, 2023;
originally announced October 2023.
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Analog Content-Addressable Memory from Complementary FeFETs
Authors:
Xiwen Liu,
Keshava Katti,
Yunfei He,
Paul Jacob,
Claudia Richter,
Uwe Schroeder,
Santosh Kurinec,
Pratik Chaudhari,
Deep Jariwala
Abstract:
To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system. Despite advancements in non-volatile memory (NVM) for matrix multiplication, other critical data-intensive operations, like parallel search, have been overlo…
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To address the increasing computational demands of artificial intelligence (AI) and big data, compute-in-memory (CIM) integrates memory and processing units into the same physical location, reducing the time and energy overhead of the system. Despite advancements in non-volatile memory (NVM) for matrix multiplication, other critical data-intensive operations, like parallel search, have been overlooked. Current parallel search architectures, namely content-addressable memory (CAM), often use binary, which restricts density and functionality. We present an analog CAM (ACAM) cell, built on two complementary ferroelectric field-effect transistors (FeFETs), that performs parallel search in the analog domain with over 40 distinct match windows. We then deploy it to calculate similarity between vectors, a building block in the following two machine learning problems. ACAM outperforms ternary CAM (TCAM) when applied to similarity search for few-shot learning on the Omniglot dataset, yielding projected simulation results with improved inference accuracy by 5%, 3x denser memory architecture, and more than 100x faster speed compared to central processing unit (CPU) and graphics processing unit (GPU) per similarity search on scaled CMOS nodes. We also demonstrate 1-step inference on a kernel regression model by combining non-linear kernel computation and matrix multiplication in ACAM, with simulation estimates indicating 1,000x faster inference than CPU and GPU.
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Submitted 17 September, 2023;
originally announced September 2023.
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Distribution of Telecom Entangled Photons through a 7.7 km Antiresonant Hollow-Core Fiber
Authors:
Michael Antesberger,
Carla M. D. Richter,
Francesco Poletti,
Radan Slavík,
Periklis Petropoulos,
Hannes Hübel,
Alessandro Trenti,
Philip Walther,
Lee A. Rozema
Abstract:
State of the art classical and quantum communication rely on standard optical fibers with solid cores to transmit light over long distances. However, recent advances have led to the emergence of antiresonant hollow-core optical fibers (AR-HCFs), which due to the novel fiber geometry, show remarkable optical guiding properties, which are not as limited by the material properties as solid-core fiber…
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State of the art classical and quantum communication rely on standard optical fibers with solid cores to transmit light over long distances. However, recent advances have led to the emergence of antiresonant hollow-core optical fibers (AR-HCFs), which due to the novel fiber geometry, show remarkable optical guiding properties, which are not as limited by the material properties as solid-core fibers. In this paper, we explore the transmission of entangled photons through a novel 7.7 km AR-HCF in a laboratory environment at 1550 nm, presenting the first successful demonstration of entanglement distribution via a long AR-HCF. In addition to showing these novel fibers are compatible with long distance quantum communication, we highlight the low latency and low chromatic dispersion intrinsic to AR-HCF, which can increase the secure key rate in time-bin based quantum key distribution protocols.
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Submitted 21 June, 2024; v1 submitted 2 August, 2023;
originally announced August 2023.
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Ultrafast Hidden Spin Polarization Dynamics of Bright and Dark Excitons in 2H-WSe$_2$
Authors:
Mauro Fanciulli,
David Bresteau,
Jérome Gaudin,
Shuo Dong,
Romain Géneaux,
Thierry Ruchon,
Olivier Tcherbakoff,
Ján Minár,
Olivier Heckmann,
Maria Christine Richter,
Karol Hricovini,
Samuel Beaulieu
Abstract:
We performed spin-, time- and angle-resolved extreme ultraviolet photoemission spectroscopy (STARPES) of excitons prepared by photoexcitation of inversion-symmetric 2H-WSe$_2$ with circularly polarized light. The very short probing depth of XUV photoemission permits selective measurement of photoelectrons originating from the top-most WSe$_2$ layer, allowing for direct measurement of hidden spin p…
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We performed spin-, time- and angle-resolved extreme ultraviolet photoemission spectroscopy (STARPES) of excitons prepared by photoexcitation of inversion-symmetric 2H-WSe$_2$ with circularly polarized light. The very short probing depth of XUV photoemission permits selective measurement of photoelectrons originating from the top-most WSe$_2$ layer, allowing for direct measurement of hidden spin polarization of bright and momentum-forbidden dark excitons. Our results reveal efficient chiroptical control of bright excitons' hidden spin polarization. Following optical photoexcitation, intervalley scattering between nonequivalent K-K' valleys leads to a decay of bright excitons' hidden spin polarization. Conversely, the ultrafast formation of momentum-forbidden dark excitons acts as a local spin polarization reservoir, which could be used for spin injection in van der Waals heterostructures involving multilayer transition metal dichalcogenides.
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Submitted 18 July, 2023; v1 submitted 6 June, 2023;
originally announced June 2023.
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Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
Authors:
C. Corley-Wiciak,
M. H. Zoellner,
I. Zaitsev,
K. Anand,
E. Zatterin,
Y. Yamamoto,
A. A. Corley-Wiciak,
F. Reichmann,
W. Langheinrich,
L. R. Schreiber,
C. L. Manganelli,
M. Virgilio,
C. Richter,
G. Capellini
Abstract:
The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-in…
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The lattice strain induced by metallic electrodes can impair the functionality of advanced quantum devices operating with electron or hole spins. Here we investigate the deformation induced by CMOS-manufactured titanium nitride electrodes on the lattice of a buried, 10 nm-thick Si/SiGe Quantum Well by means of nanobeam Scanning X-ray Diffraction Microscopy. We were able to measure TiN electrode-induced local modulations of the strain tensor components in the range of $2 - 8 \times 10^{-4}$ with ~60 nm lateral resolution. We have evaluated that these strain fluctuations are reflected into local modulations of the potential of the conduction band minimum larger than 2 meV, which is close to the orbital energy of an electrostatic quantum dot. We observe that the sign of the strain modulations at a given depth of the quantum well layer depends on the lateral dimensions of the electrodes. Since our work explores the impact of device geometry on the strain-induced energy landscape, it enables further optimization of the design of scaled CMOS-processed quantum devices.
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Submitted 18 April, 2023;
originally announced April 2023.
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Learning and Predicting Multimodal Vehicle Action Distributions in a Unified Probabilistic Model Without Labels
Authors:
Charles Richter,
Patrick R. Barragán,
Sertac Karaman
Abstract:
We present a unified probabilistic model that learns a representative set of discrete vehicle actions and predicts the probability of each action given a particular scenario. Our model also enables us to estimate the distribution over continuous trajectories conditioned on a scenario, representing what each discrete action would look like if executed in that scenario. While our primary objective i…
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We present a unified probabilistic model that learns a representative set of discrete vehicle actions and predicts the probability of each action given a particular scenario. Our model also enables us to estimate the distribution over continuous trajectories conditioned on a scenario, representing what each discrete action would look like if executed in that scenario. While our primary objective is to learn representative action sets, these capabilities combine to produce accurate multimodal trajectory predictions as a byproduct. Although our learned action representations closely resemble semantically meaningful categories (e.g., "go straight", "turn left", etc.), our method is entirely self-supervised and does not utilize any manually generated labels or categories. Our method builds upon recent advances in variational inference and deep unsupervised clustering, resulting in full distribution estimates based on deterministic model evaluations.
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Submitted 13 December, 2022;
originally announced December 2022.
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Ångstrom depth resolution with chemical specificity at the liquid-vapor interface
Authors:
R. Dupuy,
J. Filser,
C. Richter,
T. Buttersack,
F. Trinter,
S. Gholami,
R. Seidel,
C. Nicolas,
J. Bozek,
D. Egger,
H. Oberhofer,
S. Thürmer,
U. Hergenhahn,
K. Reuter,
B. Winter,
H. Bluhm
Abstract:
The determination of depth profiles across interfaces is of primary importance in many scientific and technological areas. Photoemission spectroscopy is in principle well suited for this purpose, yet a quantitative implementation for investigations of liquid-vapor interfaces is hindered by the lack of understanding of electron-scattering processes in liquids. Previous studies have shown, however,…
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The determination of depth profiles across interfaces is of primary importance in many scientific and technological areas. Photoemission spectroscopy is in principle well suited for this purpose, yet a quantitative implementation for investigations of liquid-vapor interfaces is hindered by the lack of understanding of electron-scattering processes in liquids. Previous studies have shown, however, that core-level photoelectron angular distributions (PADs) are altered by depth-dependent elastic electron scattering and can, thus, reveal information on the depth distribution of species across the interface. Here, we explore this concept further and show that the anisotropy parameter characterizing the PAD scales linearly with the average distance of atoms along the surface normal. This behavior can be accounted for in the low-collision-number regime. We also show that results for different atomic species can be compared on the same length scale. We demonstrate that atoms separated by about 1~Å~along the surface normal can be clearly distinguished with this method, achieving excellent depth resolution.
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Submitted 14 February, 2023; v1 submitted 30 September, 2022;
originally announced September 2022.
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Asymmetrical contact scaling and measurements in MoS2 FETs
Authors:
Zhihui Cheng,
Jonathan Backman,
Huairuo Zhang,
Hattan Abuzaid,
Guoqing Li,
Yifei Yu,
Linyou Cao,
Albert V. Davydov,
Mathieu Luisier,
Curt A. Richter,
Aaron D. Franklin
Abstract:
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all device dimensions to achieve higher device density in a certain chip area. For 2D materials-based transistors, both the channel and contact scalability must be…
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Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all device dimensions to achieve higher device density in a certain chip area. For 2D materials-based transistors, both the channel and contact scalability must be investigated. The channel scalability of 2D materials has been thoroughly investigated, confirming their resilience to short-channel effects. However, systematic studies on contact scalability remain rare and the current understanding of contact scaling in 2D FET is inconsistent and oversimplified. Here we combine physically scaled contacts and asymmetrical contact measurements to investigate the contact scaling behavior in 2D field-effect transistors (FETs). The asymmetrical contact measurements directly compare electron injection with different contact lengths while using the exact same channel, eliminating channel-to-channel variations. Compared to devices with long contact lengths, devices with short contact lengths (scaled contacts) exhibit larger variation, smaller drain currents at high drain-source voltages, and a higher chance of showing early saturation and negative differential resistance. Quantum transport simulations show that the transfer length of Ni-MoS2 contacts can be as short as 5 nm. Our results suggest that charge injection at the source contact is different from injection at the drain side: scaled source contacts can limit the drain current, whereas scaled drain contacts cannot. Furthermore, we clearly identified that the transfer length depends on the quality of the metal-2D interface. The asymmetrical contact measurements proposed here will enable further understanding of contact scaling behavior at various interfaces.
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Submitted 24 September, 2022; v1 submitted 9 September, 2022;
originally announced September 2022.
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X-ray scattering study of GaN nanowires grown on Ti/Al$_{2}$O$_{3}$ by molecular beam epitaxy
Authors:
Vladimir M. Kaganer,
Oleg V. Konovalov,
Gabriele Calabrese,
David van Treeck,
Albert Kwasniewski,
Carsten Richter,
Sergio Fernández-Garrido,
Oliver Brandt
Abstract:
GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection and at grazing incidence, reveals Ti, Ti$_{3}$O, Ti$_{3}$Al, and TiO$_x$N$_y$ crystallites with in-plane and out-of-plane lattice parameters intermediate bet…
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GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg reflection and at grazing incidence, reveals Ti, Ti$_{3}$O, Ti$_{3}$Al, and TiO$_x$N$_y$ crystallites with in-plane and out-of-plane lattice parameters intermediate between those of Al$_{2}$O$_{3}$ and GaN. These topotaxial crystallites in Ti film, formed due to interfacial reactions and N exposure, possess fairly little misorientation with respect to Al$_{2}$O$_{3}$. As a result, GaN NWs grow on the top TiN layer possessing a high degree of epitaxial orientation with respect to the substrate. The measured GISAXS intensity distributions are modeled by the Monte Carlo method taking into account the orientational distributions of NWs, a variety of their cross-sectional shapes and sizes, and roughness of their side facets. The cross-sectional size distributions of the NWs and the relative fractions of $(1\bar{1}00)$ and $(11\bar{2}0)$ side facets are determined.
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Submitted 11 July, 2022;
originally announced July 2022.
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Can we learn from developer mistakes? Learning to localize and repair real bugs from real bug fixes
Authors:
Cedric Richter,
Heike Wehrheim
Abstract:
Real bug fixes found in open source repositories seem to be the perfect source for learning to localize and repair real bugs. However, the absence of large scale bug fix collections has made it difficult to effectively exploit real bug fixes in the training of larger neural models in the past. In contrast, artificial bugs -- produced by mutating existing source code -- can be easily obtained at a…
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Real bug fixes found in open source repositories seem to be the perfect source for learning to localize and repair real bugs. However, the absence of large scale bug fix collections has made it difficult to effectively exploit real bug fixes in the training of larger neural models in the past. In contrast, artificial bugs -- produced by mutating existing source code -- can be easily obtained at a sufficient scale and are therefore often preferred in the training of existing approaches. Still, localization and repair models that are trained on artificial bugs usually underperform when faced with real bugs. This raises the question whether bug localization and repair models trained on real bug fixes are more effective in localizing and repairing real bugs.
We address this question by introducing RealiT, a pre-train-and-fine-tune approach for effectively learning to localize and repair real bugs from real bug fixes. RealiT is first pre-trained on a large number of artificial bugs produced by traditional mutation operators and then fine-tuned on a smaller set of real bug fixes. Fine-tuning does not require any modifications of the learning algorithm and hence can be easily adopted in various training scenarios for bug localization or repair (even when real training data is scarce). In addition, we found that training on real bug fixes with RealiT is empirically powerful by nearly doubling the localization performance of an existing model on real bugs while maintaining or even improving the repair performance.
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Submitted 1 July, 2022;
originally announced July 2022.
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Coexistence of local structural heterogeneities and long-range ferroelectricity in Pb-free (1-x)Ba(Zr0.2Ti0.8)O3-x(Ba0.7Ca0.3)TiO3 ceramics
Authors:
Koushik Dey,
Abdul Ahad,
Kamini Gautam,
Abinash Tripathy,
Sofi Suhail Majid,
Sonia Francoual,
Carsten Richter,
MN Singh,
Archna Sagdeo,
Edmund Welter,
Naratip Vittayakorn,
Vasant G. Sathe,
Rajeev Rawat,
Dinesh Kumar Shukla
Abstract:
Environmentally benign (1-x)Ba(Ti$_{0.8}$Zr$_{0.2}$)O$_3$-x(Ba$_{0.7}$Ca$_{0.3}$)TiO$_3$ (BZT-BCT) ceramics are promising materials due to their remarkable high piezoresponse [Liu and Ren, Phys. Rev. Lett. \textbf{103}, 257602 (2009)]. In this Letter, by focusing on local and average structure in combination with macroscopic electromechanical and dielectric measurements we demonstrate the structur…
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Environmentally benign (1-x)Ba(Ti$_{0.8}$Zr$_{0.2}$)O$_3$-x(Ba$_{0.7}$Ca$_{0.3}$)TiO$_3$ (BZT-BCT) ceramics are promising materials due to their remarkable high piezoresponse [Liu and Ren, Phys. Rev. Lett. \textbf{103}, 257602 (2009)]. In this Letter, by focusing on local and average structure in combination with macroscopic electromechanical and dielectric measurements we demonstrate the structure property relationship in the tetragonal BZT-BCT ceramic. During high-temperature cubic to tetragonal phase transformation, polar nanoregions are manifested through the spontaneous volume ferroelectrostriction at temperatures below $\sim$ 477 K. Temperature-dependent local structural investigations across the Zr K edge extended x-ray absorption fine structure spectroscopy reveal an anomalous collaboration between the ZrO$_{6}$ and TiO$_6$ octahedra. These octahedra compromise their individuality during polarization development. The presence of domains of submicron size embedded inside the macroscopic ferroelectric regions below T$_{m}$, as well as their hierarchical arrangement, is observed by piezo-response force microscopy. Effects of the existence of the structural/polar heterogeneities below T$_{m}$ are observed also when polarizibilities of the poled and the unpoled samples are compared; the poled sample is found to be more susceptible to the electric field. In addition, by using electric field dependent x-ray diffraction studies we also show that this ceramic under field exhibits reduction of tetragonal distortion, which is consistent with earlier reports.
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Submitted 12 May, 2022;
originally announced May 2022.
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How to Report and Benchmark Emerging Field-Effect Transistors
Authors:
Zhihui Cheng,
Chin-Sheng Pang,
Peiqi Wang,
Son T. Le,
Yanqing Wu,
Davood Shahrjerdi,
Iuliana Radu,
Max C. Lemme,
Lian-Mao Peng,
Xiangfeng Duan,
Zhihong Chen,
Joerg Appenzeller,
Steven J. Koester,
Eric Pop,
Aaron D. Franklin,
Curt A. Richter
Abstract:
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benc…
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Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking of multiple device parameters. More importantly, the interdisciplinarity of this research community results in a lack of consistent reporting and benchmarking guidelines. Here we report a consensus among the authors regarding guidelines for reporting and benchmarking important FET parameters and performance metrics. We provide an example of this reporting and benchmarking process for a two-dimensional (2D) semiconductor FET. Our consensus will help promote an improved approach for assessing device performance in emerging FETs, thus aiding the field to progress more consistently and meaningfully.
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Submitted 4 August, 2022; v1 submitted 30 March, 2022;
originally announced March 2022.
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Nanoscale mapping of the full strain tensor, rotation and composition in partially relaxed In$_x$Ga$_{1-x}$N layers by scanning X-ray diffraction microscopy
Authors:
Carsten Richter,
Vladimir M. Kaganer,
Armelle Even,
Amélie Dussaigne,
Pierre Ferret,
Frédéric Barbier,
Yves-Matthieu Le Vaillant,
Tobias U. Schülli
Abstract:
Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in epitaxial systems in a non-destructive manner which becomes especially important in strain-engineered devices that often are subjected to intense stress. In this wo…
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Strain and composition play a fundamental role in semiconductor physics, since they are means to tune the electronic and optical properties of a material and hence develop new devices. Today it is still a challenge to measure strain in epitaxial systems in a non-destructive manner which becomes especially important in strain-engineered devices that often are subjected to intense stress. In this work, we demonstrate a microscopic mapping of the full tensors of strain and lattice orientation by means of scanning X-ray diffraction microscopy. We develope a formalism to extract all components of strain and orientation from a set of scanning diffraction measurements and apply the technique to a patterned In$_x$Ga$_{1-x}$N double layer to study strain relaxation and indium incorporation phenomena. The contributions due to varying indium content and threading dislocations are separated and analyzed.
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Submitted 28 March, 2022;
originally announced March 2022.
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Covering rectangles by few monotonous polyominoes
Authors:
Christian Richter
Abstract:
A monotonous polyomino is formed by all lattice unit squares met by the graph of some fixed monotonous continuous function $f:[a,b] \to \mathbb{R}$ with $f(k) \notin \mathbb{Z}$ whenever $k \in \mathbb{Z}$. Our main result says that the least cardinality of a covering of a lattice $(m \times n)$-rectangle by monotonous polyominoes is…
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A monotonous polyomino is formed by all lattice unit squares met by the graph of some fixed monotonous continuous function $f:[a,b] \to \mathbb{R}$ with $f(k) \notin \mathbb{Z}$ whenever $k \in \mathbb{Z}$. Our main result says that the least cardinality of a covering of a lattice $(m \times n)$-rectangle by monotonous polyominoes is $\left\lceil \frac{2}{3}\left(m+n-\sqrt{m^2+n^2-mn}\right)\right\rceil$. The paper is motivated by a problem on arrangements of straight lines on chessboards.
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Submitted 17 March, 2022;
originally announced March 2022.
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Fair partitions of the plane into incongruent pentagons
Authors:
Dirk Frettlöh,
Christian Richter
Abstract:
Motivated by a question of R.\ Nandakumar, we show that the Euclidean plane can be dissected into mutually incongruent convex pentagons of the same area and the same perimeter.
Motivated by a question of R.\ Nandakumar, we show that the Euclidean plane can be dissected into mutually incongruent convex pentagons of the same area and the same perimeter.
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Submitted 3 February, 2022;
originally announced February 2022.
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TSSB-3M: Mining single statement bugs at massive scale
Authors:
Cedric Richter,
Heike Wehrheim
Abstract:
Single statement bugs are one of the most important ingredients in the evaluation of modern bug detection and automatic program repair methods. By affecting only a single statement, single statement bugs represent a type of bug often overlooked by developers, while still being small enough to be detected and fixed by automatic methods. With the rise of data-driven automatic repair the availability…
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Single statement bugs are one of the most important ingredients in the evaluation of modern bug detection and automatic program repair methods. By affecting only a single statement, single statement bugs represent a type of bug often overlooked by developers, while still being small enough to be detected and fixed by automatic methods. With the rise of data-driven automatic repair the availability of single statement bugs at the scale of millionth of examples is more important than ever; not only for testing these methods but also for providing sufficient real world examples for training. To provide access to bug fix datasets of this scale, we are releasing two datasets called SSB-9M and TSSB-3M. While SSB-9M provides access to a collection of over 9M general single statement bug fixes from over 500K open source Python projects , TSSB-3M focuses on over 3M single statement bugs which can be fixed solely by a single statement change. To facilitate future research and empirical investigations, we annotated each bug fix with one of 20 single statement bug (SStuB) patterns typical for Python together with a characterization of the code change as a sequence of AST modifications. Our initial investigation shows that at least 40% of all single statement bug fixes mined fit at least one SStuB pattern, and that the majority of 72% of all bugs can be fixed with the same syntactic modifications as needed for fixing SStuBs.
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Submitted 28 January, 2022;
originally announced January 2022.
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Geometric interference in a high-mobility graphene annulus p-n junction device
Authors:
Son T. Le,
Albert F. Rigosi,
Joseph A. Hagmann,
Christopher Gutierrez,
Ji Ung Lee,
Curt A. Richter
Abstract:
The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the peaks resulting from those patterns are independent of temperature and magnetic field. Furthermore, these patterns are not attributable to Ahar…
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The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position of the peaks resulting from those patterns are independent of temperature and magnetic field. Furthermore, these patterns are not attributable to Aharonov-Bohm oscillations, Fabry Perot interference at the junction, or moiré potentials. The device data are compared with those of another device fabricated with a traditional Hall bar geometry, as well as with quantum transport simulation data. Since the two devices are of different topological classes, the subtle differences observed in the corresponding measured data indicate that the most likely source of the observed geometric interference patterns is quantum scarring.
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Submitted 29 December, 2021;
originally announced December 2021.
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Towards Exotic Layered Materials: 2D Cuprous Iodide
Authors:
Kimmo Mustonen,
Christoph Hofer,
Peter Kotrusz,
Alexander Markevich,
Martin Hulman,
Clemens Mangler,
Toma Susi,
Timothy J. Pennycook,
Karol Hricovini,
Christine M. Richter,
Jannik C. Meyer,
Jani Kotakoski,
Viera Skakalova
Abstract:
Heterostructures composed of two-dimensional (2D) materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials is increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the lar…
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Heterostructures composed of two-dimensional (2D) materials are already opening many new possibilities in such fields of technology as electronics and magnonics, but far more could be achieved if the number and diversity of 2D materials is increased. So far, only a few dozen 2D crystals have been extracted from materials that exhibit a layered phase in ambient conditions, omitting entirely the large number of layered materials that may exist in other temperatures and pressures. Here, we demonstrate how these structures can be stabilized in 2D van der Waals stacks under room temperature via growing them directly in graphene encapsulation by using graphene oxide as the template material. Specifically, we produce an ambient stable 2D structure of copper and iodine, a material that normally only occurs in layered form at elevated temperatures between 645 and 675 K. Our results establish a route to the production of more exotic phases of materials that would otherwise be difficult or impossible to stabilize for experiments in ambient.
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Submitted 3 December, 2021; v1 submitted 17 September, 2021;
originally announced September 2021.
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Piezoelectricity in hafnia
Authors:
Sangita Dutta,
Pratyush Buragohain,
Sebastjan Glinsek,
Claudia Richter,
Hugo Aramberri,
Haidong Lu,
Uwe Schroeder,
Emmanuel Defay,
Alexei Gruverman,
Jorge Íñiguez
Abstract:
Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, wh…
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Because of its compatibility with semiconductor-based technologies, hafnia (HfO$_{2}$) is today's most promising ferroelectric material for applications in electronics. Yet, knowledge on the ferroic and electromechanical response properties of this all-important compound is still lacking. Interestingly, HfO$_2$ has recently been predicted to display a negative longitudinal piezoelectric effect, which sets it apart form classic ferroelectrics (e.g., perovskite oxides like PbTiO$_3$) and is reminiscent of the behavior of some organic compounds. The present work corroborates this behavior, by first-principles calculations and an experimental investigation of HfO$_2$ thin films using piezoresponse force microscopy. Further,the simulations show how the chemical coordination of the active oxygen atoms is responsible for the negative longitudinal piezoelectric effect. Building on these insights, it is predicted that, by controlling the environment of such active oxygens (e.g., by means of an epitaxial strain), it is possible to change the sign of the piezoelectric response of the material.
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Submitted 15 July, 2021;
originally announced July 2021.
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DeepMutants: Training neural bug detectors with contextual mutations
Authors:
Cedric Richter,
Heike Wehrheim
Abstract:
Learning-based bug detectors promise to find bugs in large code bases by exploiting natural hints such as names of variables and functions or comments. Still, existing techniques tend to underperform when presented with realistic bugs. We believe bug detector learning to currently suffer from a lack of realistic defective training examples. In fact, real world bugs are scarce which has driven exis…
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Learning-based bug detectors promise to find bugs in large code bases by exploiting natural hints such as names of variables and functions or comments. Still, existing techniques tend to underperform when presented with realistic bugs. We believe bug detector learning to currently suffer from a lack of realistic defective training examples. In fact, real world bugs are scarce which has driven existing methods to train on artificially created and mostly unrealistic mutants. In this work, we propose a novel contextual mutation operator which incorporates knowledge about the mutation context to dynamically inject natural and more realistic faults into code. Our approach employs a masked language model to produce a context-dependent distribution over feasible token replacements. The evaluation shows that sampling from a language model does not only produce mutants which more accurately represent real bugs but also lead to better performing bug detectors, both on artificial benchmarks and on real world source code.
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Submitted 14 July, 2021;
originally announced July 2021.
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Low-energy constraints on photoelectron spectra measured from liquid water and aqueous solutions
Authors:
Sebastian Malerz,
Florian Trinter,
Uwe Hergenhahn,
Aaron Ghrist,
Hebatallah Ali,
Christophe Nicolas,
Clara-Magdalena Saak,
Clemens Richter,
Sebastian Hartweg,
Laurent Nahon,
Chin Lee,
Claudia Goy,
Daniel M. Neumark,
Gerard Meijer,
Iain Wilkinson,
Bernd Winter,
Stephan Thürmer
Abstract:
We report on the effects of electron collision and indirect ionization processes, occurring at photoexcitation and electron kinetic energies well below 30 eV on the photoemission spectra of liquid water. We show that the nascent photoelectron spectrum and, hence, the inferred electron binding energy can only be accurately determined if electron energies are large enough that cross sections for qua…
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We report on the effects of electron collision and indirect ionization processes, occurring at photoexcitation and electron kinetic energies well below 30 eV on the photoemission spectra of liquid water. We show that the nascent photoelectron spectrum and, hence, the inferred electron binding energy can only be accurately determined if electron energies are large enough that cross sections for quasi-elastic scattering processes, such as vibrational excitation, are negligible. Otherwise, quasi-elastic scattering leads to strong, down-to-few-meV kinetic energy scattering losses from the direct photoelectron features, which manifest in severely distorted intrinsic photoelectron peak shapes. The associated cross-over point from predominant (known) electronically inelastic to quasi-elastic scattering seems to arise at surprisingly large electron kinetic energies, of approximately 10-14 eV. Concomitantly, we present evidence for the onset of indirect, autoionization phenomena (occurring via superexcited states) within a few eV of the primary and secondary ionization thresholds. These processes are inferred to compete with the direct ionization channels and primarily produce low-energy photoelectrons at photon and electron impact excitation energies below ~15 eV. Our results highlight that vibrational inelastic electron scattering processes and neutral photoexcitation and autoionization channels become increasingly important when photon and electron kinetic energies are decreased towards the ionization threshold. Correspondingly, we show that for neat water and aqueous solutions, great care must be taken when quantitatively analyzing photoelectron spectra measured too close to the ionization threshold. Such care is essential for both the accurate determination of solvent and solute ionization energies as well as photoelectron branching ratios and peak magnitudes.
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Submitted 19 February, 2021;
originally announced February 2021.
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Vesicle dynamics in large amplitude oscillatory extensional flow
Authors:
Charlie Lin,
Dinesh Kumar,
Channing M. Richter,
Shiyan Wang,
Charles M. Schroeder,
Vivek Narsimhan
Abstract:
Although the behavior of fluid-filled vesicles in steady flows has been extensively studied, far less is understood regarding the shape dynamics of vesicles in time-dependent oscillatory flows. Here, we investigate the nonlinear dynamics of vesicles in large amplitude oscillatory extensional (LAOE) flows using both experiments and boundary integral (BI) simulations. Our results characterize the tr…
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Although the behavior of fluid-filled vesicles in steady flows has been extensively studied, far less is understood regarding the shape dynamics of vesicles in time-dependent oscillatory flows. Here, we investigate the nonlinear dynamics of vesicles in large amplitude oscillatory extensional (LAOE) flows using both experiments and boundary integral (BI) simulations. Our results characterize the transient membrane deformations, dynamical regimes, and stress response of vesicles in LAOE in terms of reduced volume (vesicle asphericity), capillary number ($\Ca$, dimensionless flow strength), and Deborah number ($\De$, dimensionless flow frequency). Results from single vesicle experiments are found to be in good agreement with BI simulations across a wide range of parameters. Our results reveal three distinct dynamical regimes based on vesicle deformation: pulsating, reorienting, and symmetrical regimes. We construct phase diagrams characterizing the transition of vesicle shapes between pulsating, reorienting, and symmetrical regimes within the two-dimensional Pipkin space defined by $\De$ and $\Ca$. Contrary to observations on clean Newtonian droplets, vesicles do not reach a maximum length twice per strain rate cycle in the reorienting and pulsating regimes. The distinct dynamics observed in each regime result from a competition between the flow frequency, flow time scale, and membrane deformation timescale. By calculating the particle stresslet, we quantify the nonlinear relationship between average vesicle stress and strain rate. Additionally, we present results on tubular vesicles that undergo shape transformation over several strain cycles. Broadly, our work provides new information regarding the transient dynamics of vesicles in time-dependent flows that directly informs bulk suspension rheology.
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Submitted 17 February, 2021;
originally announced February 2021.
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Coproximinality of linear subspaces in generalized Minkowski spaces
Authors:
Thomas Jahn,
Christian Richter
Abstract:
We show that, for vector spaces in which distance measurement is performed using a gauge, the existence of best coapproximations in $1$-codimensional closed linear subspaces implies in dimensions $\geq 2$ that the gauge is a norm, and in dimensions $\geq 3$ that the gauge is even a Hilbert space norm. We also show that coproximinality of all closed subspaces of a fixed dimension implies coproximin…
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We show that, for vector spaces in which distance measurement is performed using a gauge, the existence of best coapproximations in $1$-codimensional closed linear subspaces implies in dimensions $\geq 2$ that the gauge is a norm, and in dimensions $\geq 3$ that the gauge is even a Hilbert space norm. We also show that coproximinality of all closed subspaces of a fixed dimension implies coproximinality of all subspaces of all lower finite dimensions.
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Submitted 14 January, 2021;
originally announced January 2021.
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Fermiology and electron-phonon coupling in the 2H and 3R polytypes of NbS$\boldsymbol{_2}$
Authors:
Zakariae El Youbi,
Sung Won Jung,
Christine Richter,
Karol Hricovini,
Cephise Cacho,
Matthew D. Watson
Abstract:
We investigate the electronic structure of the 2H and 3R polytypes of NbS$_2$. The Fermi surfaces measured by angle-resolved photoemission spectroscopy show a remarkable difference in size, reflecting a significantly increased band filling in 3R-Nb$_{1+x}$S$_2$ compared to 2H-NbS$_2$, which we attribute to the presence of additional interstitial Nb which act as electron donors. Thus we find that t…
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We investigate the electronic structure of the 2H and 3R polytypes of NbS$_2$. The Fermi surfaces measured by angle-resolved photoemission spectroscopy show a remarkable difference in size, reflecting a significantly increased band filling in 3R-Nb$_{1+x}$S$_2$ compared to 2H-NbS$_2$, which we attribute to the presence of additional interstitial Nb which act as electron donors. Thus we find that the stoichiometry, rather than the stacking arrangement, is the most important factor in the difference in electronic and physical properties of the two phases. Our high resolution data on the 2H phase shows kinks in the spectral function that are fingerprints of the electron-phonon coupling. However, the strength of the coupling is found to be much larger for the the sections of bands with Nb 4$d_{x^2-y^2,xy}$ character than for the Nb 4$d_{3z^2-r^2}$. Our results provide an experimental framework for interpreting the two-gap superconductivity and "latent" charge density wave in 2H-NbS$_2$.
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Submitted 30 March, 2021; v1 submitted 23 December, 2020;
originally announced December 2020.
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Neural Representations for Modeling Variation in Speech
Authors:
Martijn Bartelds,
Wietse de Vries,
Faraz Sanal,
Caitlin Richter,
Mark Liberman,
Martijn Wieling
Abstract:
Variation in speech is often quantified by comparing phonetic transcriptions of the same utterance. However, manually transcribing speech is time-consuming and error prone. As an alternative, therefore, we investigate the extraction of acoustic embeddings from several self-supervised neural models. We use these representations to compute word-based pronunciation differences between non-native and…
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Variation in speech is often quantified by comparing phonetic transcriptions of the same utterance. However, manually transcribing speech is time-consuming and error prone. As an alternative, therefore, we investigate the extraction of acoustic embeddings from several self-supervised neural models. We use these representations to compute word-based pronunciation differences between non-native and native speakers of English, and between Norwegian dialect speakers. For comparison with several earlier studies, we evaluate how well these differences match human perception by comparing them with available human judgements of similarity. We show that speech representations extracted from a specific type of neural model (i.e. Transformers) lead to a better match with human perception than two earlier approaches on the basis of phonetic transcriptions and MFCC-based acoustic features. We furthermore find that features from the neural models can generally best be extracted from one of the middle hidden layers than from the final layer. We also demonstrate that neural speech representations not only capture segmental differences, but also intonational and durational differences that cannot adequately be represented by a set of discrete symbols used in phonetic transcriptions.
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Submitted 26 January, 2022; v1 submitted 25 November, 2020;
originally announced November 2020.
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The complete characterization of tangram pentagons
Authors:
Sarah Sophie Pohl,
Christian Richter
Abstract:
The old Chinese puzzle tangram gives rise to serious mathematical problems when one asks for all tangram figures that satisfy particular geometric properties. All $13$ convex tangram figures are known since 1942. They include the only triangular and all six quadrangular tangram figures. The families of all $n$-gonal tangram figures with $n \ge 6$ are either infinite or empty. Here we characterize…
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The old Chinese puzzle tangram gives rise to serious mathematical problems when one asks for all tangram figures that satisfy particular geometric properties. All $13$ convex tangram figures are known since 1942. They include the only triangular and all six quadrangular tangram figures. The families of all $n$-gonal tangram figures with $n \ge 6$ are either infinite or empty. Here we characterize all $53$ pentagonal tangram figures, including $51$ non-convex pentagons and $31$ pentagons whose vertices are not contained in the same orthogonal lattice.
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Submitted 17 June, 2020;
originally announced June 2020.
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Bulk and surface electronic states in the dosed semimetallic HfTe$\boldsymbol{_2}$
Authors:
Zakariae El Youbi,
Sung Won Jung,
Saumya Mukherjee,
Mauro Fanciulli,
Jakub Schusser,
Olivier Heckmann,
Christine Richter,
Ján Minár,
Karol Hricovini,
Matthew D. Watson,
Cephise Cacho
Abstract:
The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe$_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-…
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The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T-HfTe$_2$, a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-resolved photoemission spectroscopy (ARPES), we have investigated the electronic structure of this material as a function of Potassium (K) deposition. From the k$_z$ maps, we observe the appearance of 2D dispersive bands after electron dosing, with an increasing sharpness of the bands, consistent with the wavefunction confinement at the topmost layer. In our highest-dosing cases, a monolayer-like electronic structure emerges, presumably as a result of intercalation of the alkali metal. Here, by bringing the topmost valence band below $E_F$, we can directly measure a band overlap of $\sim$ 0.2 eV. However, 3D bulk-like states still contribute to the spectra even after considerable dosing. Our work provides a reference point for the increasingly popular studies of the alkali metal dosing of semimetals using ARPES.
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Submitted 7 June, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
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Incongruent equipartitions of the plane into quadrangles of equal perimeter
Authors:
Dirk Frettlöh,
Christian Richter
Abstract:
Motivated by a question of R.\ Nandakumar, we show that the Euclidean plane can be dissected into mutually incongruent convex quadrangles of the same area and the same perimeter. As a byproduct we obtain vertex-to-vertex dissections of the plane by mutually incongruent triangles of unit area that are arbitrarily close to the periodic vertex-to-vertex tiling by equilateral triangles.
Motivated by a question of R.\ Nandakumar, we show that the Euclidean plane can be dissected into mutually incongruent convex quadrangles of the same area and the same perimeter. As a byproduct we obtain vertex-to-vertex dissections of the plane by mutually incongruent triangles of unit area that are arbitrarily close to the periodic vertex-to-vertex tiling by equilateral triangles.
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Submitted 1 April, 2020;
originally announced April 2020.
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On the monotonicity of the isoperimetric quotient for parallel bodies
Authors:
Christian Richter,
Eugenia Saorín Gómez
Abstract:
The isoperimetric quotient of the whole family of inner and outer parallel bodies of a convex body is shown to be decreasing in the parameter of definition of parallel bodies, along with a characterization of those convex bodies for which that quotient happens to be constant on some interval within its domain. This is obtained relative to arbitrary gauge bodies, having the classical Euclidean sett…
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The isoperimetric quotient of the whole family of inner and outer parallel bodies of a convex body is shown to be decreasing in the parameter of definition of parallel bodies, along with a characterization of those convex bodies for which that quotient happens to be constant on some interval within its domain. This is obtained relative to arbitrary gauge bodies, having the classical Euclidean setting as a particular case. Similar results are established for different families of Wulff shapes that are closely related to parallel bodies. These give rise to solutions of isoperimetric-type problems. Furthermore, new results on the monotonicity of quotients of other quermassintegrals different from surface area and volume, for the family of parallel bodies, are obtained.
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Submitted 31 March, 2020;
originally announced March 2020.
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Double-mode relaxation of highly deformed vesicles
Authors:
Dinesh Kumar,
Channing M. Richter,
Charles M. Schroeder
Abstract:
Lipid vesicles are known to undergo complex conformational transitions, but it remains challenging to systematically characterize non-equilibrium membrane shape dynamics. Here, we report the direct observation of lipid vesicle relaxation from highly deformed shapes using a Stokes trap. Vesicle shape relaxation is described by two distinct characteristic time scales governed by the bending modulus…
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Lipid vesicles are known to undergo complex conformational transitions, but it remains challenging to systematically characterize non-equilibrium membrane shape dynamics. Here, we report the direct observation of lipid vesicle relaxation from highly deformed shapes using a Stokes trap. Vesicle shape relaxation is described by two distinct characteristic time scales governed by the bending modulus and membrane tension. Interestingly, experimental results are consistent with a viscoelastic model of a deformed membrane. Overall, these results show that vesicle relaxation is governed by an interplay between membrane elastic moduli, surface tension, and vesicle deflation.
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Submitted 27 February, 2020;
originally announced March 2020.
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Spin-, time- and angle-resolved photoemission spectroscopy on WTe$_2$
Authors:
Mauro Fanciulli,
Jakub Schusser,
Min-I Lee,
Zakariae El Youbi,
Olivier Heckmann,
Maria Christine Richter,
Cephise Cacho,
Carlo Spezzani,
David Bresteau,
Jean-François Hergott,
Pascal D'Oliveira,
Olivier Tcherbakoff,
Thierry Ruchon,
Jan Minár,
Karol Hricovini
Abstract:
We combined a spin-resolved photoemission spectrometer with a high-harmonic generation (HHG) laser source in order to perform spin-, time- and angle-resolved photoemission spectroscopy (STARPES) experiments on the transition metal dichalcogenide bulk WTe$_2$, a possible Weyl type-II semimetal. Measurements at different femtosecond pump-probe delays and comparison with spin-resolved one-step photoe…
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We combined a spin-resolved photoemission spectrometer with a high-harmonic generation (HHG) laser source in order to perform spin-, time- and angle-resolved photoemission spectroscopy (STARPES) experiments on the transition metal dichalcogenide bulk WTe$_2$, a possible Weyl type-II semimetal. Measurements at different femtosecond pump-probe delays and comparison with spin-resolved one-step photoemission calculations provide insight into the spin polarization of electrons above the Fermi level in the region where Weyl points of WTe$_2$ are expected. We observe a spin accumulation above the Weyl points region, that is consistent with a spin-selective bottleneck effect due to the presence of spin polarized cone-like electronic structure. Our results support the feasibility of STARPES with HHG, which despite being experimentally challenging provides a unique way to study spin dynamics in photoemission.
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Submitted 13 December, 2019;
originally announced December 2019.
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Estimation of Muscle Fascicle Orientation in Ultrasonic Images
Authors:
Regina Pohle-Fröhlich,
Christoph Dalitz,
Charlotte Richter,
Benjamin Stäudle,
Kirsten Albracht
Abstract:
We compare four different algorithms for automatically estimating the muscle fascicle angle from ultrasonic images: the vesselness filter, the Radon transform, the projection profile method and the gray level cooccurence matrix (GLCM). The algorithm results are compared to ground truth data generated by three different experts on 425 image frames from two videos recorded during different types of…
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We compare four different algorithms for automatically estimating the muscle fascicle angle from ultrasonic images: the vesselness filter, the Radon transform, the projection profile method and the gray level cooccurence matrix (GLCM). The algorithm results are compared to ground truth data generated by three different experts on 425 image frames from two videos recorded during different types of motion. The best agreement with the ground truth data was achieved by a combination of pre-processing with a vesselness filter and measuring the angle with the projection profile method. The robustness of the estimation is increased by applying the algorithms to subregions with high gradients and performing a LOESS fit through these estimates.
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Submitted 9 December, 2019;
originally announced December 2019.
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Photoexcited organic molecules $en~route$ to highly efficient autoionization
Authors:
Sesha Vempati,
Lea Bogner,
Clemens Richter,
Jan-Christoph Deinert,
Laura Foglia,
Lukas Gierster,
Julia Stähler
Abstract:
The conversion of optical and electrical energy in novel materials is key to modern optoelectronic and light-harvesting applications. Here, we investigate the equilibration dynamics of photoexcited 2,7-bis(biphenyl-4-yl)-2,7-ditertbutyl-9,9-spirobiuorene (SP6) molecules adsorbed on ZnO(10-10) using femtosecond time-resolved two-photon photoelectron (2PPE) and optical spectroscopy. We find that, af…
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The conversion of optical and electrical energy in novel materials is key to modern optoelectronic and light-harvesting applications. Here, we investigate the equilibration dynamics of photoexcited 2,7-bis(biphenyl-4-yl)-2,7-ditertbutyl-9,9-spirobiuorene (SP6) molecules adsorbed on ZnO(10-10) using femtosecond time-resolved two-photon photoelectron (2PPE) and optical spectroscopy. We find that, after initial ultrafast relaxation on fs and ps timescales, an optically dark state is populated, likely the SP6 triplet (T) state, that undergoes Dexter-type energy transfer ($r_{\mathrm{Dex}} = 1.3~\mathrm{nm}$) and exhibits a long decay time of 0.1 s. Because of this long lifetime a photostationary state with average T-T distances below 2 nm is established at excitation densities in the $10^{20}~\mathrm{cm}^{-2}~\mathrm{s}^{-1}$ range. This large density enables decay by T-T annihilation (TTA) mediating autoionization despite an extremely low TTA rate of $k_{\mathrm{TTA}} = 4.5~10^{-26}~\mathrm{m}^3~\mathrm{s}^{-1}$. The large external quantum efficiency of the autoionization process (up to 15 %) and photocurrent densities in the \mathrm{mA}~\mathrm{cm}^{-2}$ range offer great potential for light-harvesting applications.
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Submitted 11 November, 2019;
originally announced November 2019.
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Rapid, Quantitative Therapeutic Screening for Alzheimer's Enzymes Enabled by Optimal Signal Transduction with Transistors
Authors:
Son T. Le,
Michelle A. Morris,
Antonio Cardone,
Nicholas B. Guros,
Jeffery B. Klauda,
Brent A. Sperling,
Curt A. Richter,
Harish C. Pant,
Arvind Balijepalli
Abstract:
We show that simple, commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed loop control exhibit an ~3-fold improvement in pH readout resolution to (7.2+/-0.3)x10^-3 at a bandwidth of 10 Hz when compared with the open loop operation commonly employed by integrated ion-sensitive field-effect transistors (ISFETs). We leveraged the improved nFET performance to…
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We show that simple, commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed loop control exhibit an ~3-fold improvement in pH readout resolution to (7.2+/-0.3)x10^-3 at a bandwidth of 10 Hz when compared with the open loop operation commonly employed by integrated ion-sensitive field-effect transistors (ISFETs). We leveraged the improved nFET performance to measure the change in solution pH arising from the activity of a pathological form of the kinase Cdk5, an enzyme implicated in Alzheimer's disease, and showed quantitative agreement with previous measurements. The improved pH resolution was realized while the devices were operated in a remote sensing configuration with the pH sensing element off-chip and connected electrically to the FET gate terminal. We compared these results with those measured by using a custom-built dual-gate 2D field-effect transistor (dg2DFET) fabricated with 2D semi-conducting MoS2 channels and a moderate device gain, alpha=8. Under identical solution conditions the pH resolution of the nFETs was only 2-fold worse than the dg2DFETs pH resolution of (3.9+/-0.7)x10^-3. Finally, using the nFETs, we demonstrated the effectiveness of a custom polypeptide, p5, as a therapeutic agent in restoring the function of Cdk5. We expect that the straight-forward modifications to commercially sourced nFETs demonstrated here will lower the barrier to widespread adoption of these remote-gate devices and enable sensitive bioanalytical measurements for high throughput screening in drug discovery and precision medicine applications.
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Submitted 21 October, 2019;
originally announced October 2019.
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Conformational dynamics and phase behavior of lipid vesicles in a precisely controlled extensional flow
Authors:
Dinesh Kumar,
Channing M. Richter,
Charles M. Schroeder
Abstract:
Lipid vesicles play a key role in fundamental biological processes. Despite recent progress, we lack a complete understanding of the non-equilibrium dynamics of vesicles due to challenges associated with long-time observation of shape fluctuations in strong flows. In this work, we present a flow-phase diagram for vesicle shape and conformational transitions in planar extensional flow using a Stoke…
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Lipid vesicles play a key role in fundamental biological processes. Despite recent progress, we lack a complete understanding of the non-equilibrium dynamics of vesicles due to challenges associated with long-time observation of shape fluctuations in strong flows. In this work, we present a flow-phase diagram for vesicle shape and conformational transitions in planar extensional flow using a Stokes trap, which enables control over the center-of-mass position of single or multiple vesicles in precisely defined flows [Shenoy, Rao, Schroeder, \textit{PNAS}, 113(15):3976-3981, 2016]. In this way, we directly observe the non-equilibrium conformations of lipid vesicles as a function of reduced volume $ν$, capillary number $Ca$, and viscosity contrast $λ$. Our results show that vesicle dynamics in extensional flow are characterized by the emergence of three distinct shape transitions, including a tubular to symmetric dumbbell transition, a spheroid to asymmetric dumbbell transition, and quasi-spherical to ellipsoid transition. The experimental phase diagram is in good agreement with recent predictions from simulations [Narsimhan, Spann, Shaqfeh, \textit{J. Fluid Mech.}, 2014, \textbf{750}, 144]. We further show that the phase boundary of vesicle shape transitions is independent of the viscosity contrast. Taken together, our results demonstrate the utility of the Stokes trap for the precise quantification of vesicle stretching dynamics in precisely defined flows.
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Submitted 14 October, 2019;
originally announced October 2019.
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Set-up for multi coincidence experiments of EUV to VIS photons and charged particles -- the solid angle maximization approach
Authors:
A. Hans,
C. Ozga,
Ph. Schmidt,
G. Hartmann,
A. Nehls,
Ph. Wenzel,
C. Richter,
C. Lant,
X. Holzapfel,
J. H. Viehmann,
U. Hergenhahn,
A. Ehresmann,
A. Knie
Abstract:
The coincident detection of particles is a powerful method in experimental physics, enabling the investigation of a variety of projectile-target interactions. The vast majority of coincidence experiments is performed with charged particles, as they can be guided by electric or magnetic fields to yield large detection probabilities. When a neutral species or a photon is one of the particles recorde…
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The coincident detection of particles is a powerful method in experimental physics, enabling the investigation of a variety of projectile-target interactions. The vast majority of coincidence experiments is performed with charged particles, as they can be guided by electric or magnetic fields to yield large detection probabilities. When a neutral species or a photon is one of the particles recorded in coincidence, its detection probability typically suffers from small solid angles. Here, we present two optical assemblies considerably enhancing the solid angle for EUV to VIS photon detection. The efficiency and versatility of these assemblies is demonstrated for electron-photon coincidence detection, where electrons and photons emerge from fundamental processes after photoexcitation of gaseous samples by synchrotron radiation.
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Submitted 11 June, 2019;
originally announced June 2019.
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Incongruent equipartitions of the plane
Authors:
Dirk Frettlöh,
Christian Richter
Abstract:
R. Nandakumar asked whether there is a tiling of the plane by pairwise incongruent triangles of equal area and equal perimeter. Recently a negative answer was given by Kupavskii, Pach and Tardos. Still one may ask for weaker versions of the problem, or for the analogue of this problem for quadrangles, pentagons, or hexagons. Several answers were given by the first author in a previous paper. Here…
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R. Nandakumar asked whether there is a tiling of the plane by pairwise incongruent triangles of equal area and equal perimeter. Recently a negative answer was given by Kupavskii, Pach and Tardos. Still one may ask for weaker versions of the problem, or for the analogue of this problem for quadrangles, pentagons, or hexagons. Several answers were given by the first author in a previous paper. Here we solve three further cases. In particular, our main result shows that there are vertex-to-vertex tilings by pairwise incongruent triangles of unit area and bounded perimeter.
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Submitted 1 April, 2020; v1 submitted 20 May, 2019;
originally announced May 2019.
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Strong equilibration of Landau levels edge-states at the graphene edge
Authors:
Son T. Le,
Joseph A. Hagmann,
Nikolai Klimov,
David Newell,
Ji Ung Lee,
Jun Yan,
Curt A. Richter
Abstract:
We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction device with a ring-shaped geometry for the channel. The unique device geometry allows the interactions between edge-states to be probed at both electrostatic edges defined by pn junctions and at the graphene physical edge. Me…
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We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction device with a ring-shaped geometry for the channel. The unique device geometry allows the interactions between edge-states to be probed at both electrostatic edges defined by pn junctions and at the graphene physical edge. Measurements show that while the lowest LL edge-state is decoupled from the other LLs along the electrostatic junction, all the edge-states strongly equilibrate at the graphene physical edge despite the relatively short distance that they travel along the edge in our device. These findings are fundamental for the engineering of future high-performance graphene field-effect transistors based upon electron optics.
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Submitted 9 April, 2019;
originally announced April 2019.
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Reproducible Performance Improvements to Monolayer MoS2 Transistors through Exposed Material Forming Gas Annealing
Authors:
Nicholas B. Guros,
Son T. Le,
Siyuan Zhang,
Brent A. Sperling,
Jeffery B. Klauda,
Curt A. Richter,
Arvind Balijepalli
Abstract:
Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at the interfaces of the 2D material and the gate oxide must be overcome to realize robust devices with high yield. Here, we demonstrate an optimized process to rea…
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Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at the interfaces of the 2D material and the gate oxide must be overcome to realize robust devices with high yield. Here, we demonstrate an optimized process to realize high-performance field-effect transistor (FET) arrays from large-area (~5000 um2) monolayer MoS2 with a yield of 85 %. A central element of this process is an exposed material forming gas anneal (EM-FGA) that results in uniform FET performance metrics (i.e., field-effect mobilities, threshold voltages, and contact performance). Complementary analytical measurements show that the EM-FGA process reduces deleterious channel doping effects by decreasing organic contamination, while also reducing the prevalence of insulating molybdenum oxide, effectively improving the MoS2-gate oxide interface. The uniform FET performance metrics and high device yield achieved by applying the EM-FGA technique on large-area 2D material flakes will help advance the fabrication of complex 2D nanoelectronics devices and demonstrates the need for improved engineering of the 2D material-gate oxide interface.
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Submitted 3 April, 2019;
originally announced April 2019.
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Tilings of convex polygons by equilateral triangles of many different sizes
Authors:
Christian Richter
Abstract:
An equilateral triangle cannot be dissected into finitely many mutually incongruent equilateral triangles [Tutte 1948]. Therefore Tuza [Tuza 1991] asked for the largest number $s=s(n)$ such that there is a tiling of an equilateral triangle by $n$ equilateral triangles of $s(n)$ different sizes. We solve that problem completely and consider the analogous questions for dissections of convex $k$-gons…
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An equilateral triangle cannot be dissected into finitely many mutually incongruent equilateral triangles [Tutte 1948]. Therefore Tuza [Tuza 1991] asked for the largest number $s=s(n)$ such that there is a tiling of an equilateral triangle by $n$ equilateral triangles of $s(n)$ different sizes. We solve that problem completely and consider the analogous questions for dissections of convex $k$-gons into equilateral triangles, $k=4,5,6$. Moreover, we discuss all these questions for the subclass of tilings such that no two tiles are translates of each other.
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Submitted 25 March, 2019;
originally announced March 2019.
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Quantum Capacitance-Limited MoS2 Biosensors Enable Remote Label-Free Enzyme Measurements
Authors:
Son T. Le,
Nicholas B. Guros,
Robert C. Bruce,
Antonio Cardone,
Niranjana D. Amin,
Siyuan Zhang,
Jeffery B. Klauda,
Harish C. Pant,
Curt A. Richter,
Arvind Balijepalli
Abstract:
We have demonstrated atomically thin, quantum capacitance-limited, field-effect transistors (FETs) that enable the detection of pH changes with ~75-fold higher sensitivity (4.4 V/pH) over the Nernst value of 59 mV/pH at room temperature when used as a biosensor. The transistors, which are fabricated from a monolayer of MoS2 with a room temperature ionic liquid (RTIL) in place of a conventional oxi…
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We have demonstrated atomically thin, quantum capacitance-limited, field-effect transistors (FETs) that enable the detection of pH changes with ~75-fold higher sensitivity (4.4 V/pH) over the Nernst value of 59 mV/pH at room temperature when used as a biosensor. The transistors, which are fabricated from a monolayer of MoS2 with a room temperature ionic liquid (RTIL) in place of a conventional oxide gate dielectric, exhibit very low intrinsic noise resulting in a pH limit of detection (LOD) of 92x10^-6 at 10 Hz. This high device performance, which is a function of the structure of our device, is achieved by remotely connecting the gate to a pH sensing element allowing the FETs to be reused. Because pH measurements are fundamentally important in biotechnology, the low limit of detection demonstrated here will benefit numerous applications ranging from pharmaceutical manufacturing to clinical diagnostics. As an example, we experimentally quantified the function of the kinase Cdk5, an enzyme implicated in Alzheimer's disease, at concentrations that are 5-fold lower than physiological values, and with sufficient time-resolution to allow the estimation of both steady-state and kinetic parameters in a single experiment. The high sensitivity, low LOD and fast turnaround time of the measurements will allow the development of early diagnostic tools and novel therapeutics to detect and treat neurological conditions years before currently possible.
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Submitted 21 December, 2018;
originally announced February 2019.
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Uncovering the (un-)occupied electronic structure of a buried hybrid interface
Authors:
S. Vempati,
J. -C. Deinert,
L. Gierster,
L. Bogner,
C. Richter,
N. Mutz,
S. Blumstengel,
A. Zykov,
S. Kowarik,
Y. Garmshausen,
J. Hildebrandt,
S. Hecht,
J. Stähler
Abstract:
The energy level alignment at organic/inorganic (o/i) semiconductor interfaces is crucial for any light-emitting or -harvesting functionality. Essential is the access to both occupied and unoccupied electronic states directly at the interface, which is often deeply buried underneath thick organic films and challenging to characterize. We use several complementary experimental techniques to determi…
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The energy level alignment at organic/inorganic (o/i) semiconductor interfaces is crucial for any light-emitting or -harvesting functionality. Essential is the access to both occupied and unoccupied electronic states directly at the interface, which is often deeply buried underneath thick organic films and challenging to characterize. We use several complementary experimental techniques to determine the electronic structure of p-quinquephenyl pyridine (5P-Py) adsorbed on ZnO(10-10). The parent anchoring group, pyridine, significantly lowers the work function by up to 2.9 eV and causes an occupied in-gap state (IGS) directly below the Fermi level $E_\text{F}$. Adsorption of upright-standing 5P-Py also leads to a strong work function reduction of up to 2.1 eV and to a similar IGS. The latter is then used as an initial state for the transient population of three normally unoccupied molecular levels through optical excitation and, due to its localization right at the o/i interface, provides interfacial sensitivity, even for thick 5P-Py films. We observe two final states above the vacuum level and one bound state at around 2 eV above $E_\text{F}$, which we attribute to the 5P-Py LUMO. By the separate study of anchoring group and organic dye combined with the exploitation of the occupied IGS for selective interfacial photoexcitation this work provides a new pathway for characterizing the electronic structure at buried o/i interfaces.
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Submitted 2 November, 2018;
originally announced November 2018.
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Bi monocrystal formation on InAs(111)A and B substrates
Authors:
L. Nicolaï,
J. -M. Mariot,
U. Djukic,
W. Wang,
O. Heckmann,
M. C. Richter,
J. Kanski,
M. Leandersson,
J. Sadowski,
T. Balasubramanian,
I. Vobornik,
J. Fujii,
J. Braun,
H. Ebert,
J. Minár,
K. Hricovini
Abstract:
The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi gro…
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The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi growth on the A face (In-terminated InAs) is epitaxial, contrary to that on the B face (As- terminated InAs) that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a $\approx 10$~BL deposit on the A face is identical to that of bulk Bi, while more than $\approx 30$ BL are needed for the B face. Both bulk and surface states are well accounted for by fully relativistic ab initio spin-resolved photoemission calculations.
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Submitted 1 July, 2018;
originally announced July 2018.
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Study and characterization of SrTiO3 surface
Authors:
F. Alarab,
J. Minar,
P. Sutta,
L. Prusakova,
R. Medlın,
O. Heckmann,
C. Richter,
K. Hricovini
Abstract:
The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The origin of 2DEGes at oxide interfaces has been attributed to the well known "polar catastrophe" mechanism. On the other hand, recently a 2DEG was also found on a cl…
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The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The origin of 2DEGes at oxide interfaces has been attributed to the well known "polar catastrophe" mechanism. On the other hand, recently a 2DEG was also found on a clean SrTiO3(001) surface where it is formed due to oxygen vacancies. However, these 2DEG systems have been until now found mostly on atomically perfect crystalline samples usually grown by pulsed laser deposition or molecular beam epitaxy i.e. samples which are difficult to be prepared and require specific experimental conditions. Here, we report on the fabrication of SrTiO3 thin films deposited by magnetron sputtering which is suitable for mass-production of samples adapted for nanoelectronic applications. The characterization of their structural and electronic properties was done and compared to those of SrTiO3 single crystals. XRD patterns and SEM micrography show that the deposited films are amorphous and their structure changes to polycrystalline by heating them at 900 °C. Photoemission spectroscopy (XPS and UPS) was used to study the electronic properties of the films and the crystal. In both, we observe the 2DEG system at Fermi level and the formation of Ti3+ states after heating the surface at 900 °C.
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Submitted 30 June, 2018;
originally announced July 2018.
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High quality cobalt ferrite ultrathin films with large inversion parameter grown in epitaxy on Ag(001)
Authors:
M. De Santis,
A. Bailly,
I. Coates,
S. Grenier,
O. Heckmann,
K. Hricovini,
Y. Joly,
V. Langlais,
A. Y. Ramos,
M. C. Richter,
X. Torrelles. S. Garaudée,
O. Geaymond,
O. Ulrich
Abstract:
Cobalt ferrite ultrathin films with inverse spinel structure are among the best candidates for spin-filtering at room temperature. We have fabricated high-quality epitaxial ultrathin CoFe2O4 layers on Ag(001) following a three-step method: an ultrathin metallic CoFe2 alloy was first grown in coherent epitaxy on the substrate, and then treated twice with O2, first at RT and then during annealing. T…
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Cobalt ferrite ultrathin films with inverse spinel structure are among the best candidates for spin-filtering at room temperature. We have fabricated high-quality epitaxial ultrathin CoFe2O4 layers on Ag(001) following a three-step method: an ultrathin metallic CoFe2 alloy was first grown in coherent epitaxy on the substrate, and then treated twice with O2, first at RT and then during annealing. The epitaxial orientation, the surface, interface and film structure were resolved combining LEED, STM, Auger and in situ GIXRD. A slight tetragonal distortion was observed, that should drive the easy magnetization axis in plane due to the large magneto-elastic coupling of such a material. The so-called inversion parameter, i.e. the Co fraction occupying octahedral sites in the ferrite spinel structure, is a key element for its spin-dependent electronic gap. It was obtained through in-situ x-ray resonant diffraction measurements collected at both the Co and Fe K edges. The data analysis was performed using the FDMNES code and showed that Co ions are predominantly located at octahedral sites with an inversion parameter of 0.88 +- 0.05. Ex-situ XPS gave an estimation in accordance with the values obtained through diffraction analysis.
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Submitted 29 June, 2018;
originally announced July 2018.