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Van der Waals heteroepitaxy of air stable quasi-free standing silicene layers on CVD epitaxial graphene/6H-SiC
Authors:
Zouhour Ben Jabra,
Mathieu Abel,
Filippo Fabbri,
Jean-Noel Aqua,
Mathieu Koudia,
Adrien Michon,
Paola Castrucci,
Antoine Ronda,
Holger Vach,
Maurizio De Crescenzi,
Isabelle Berbezier
Abstract:
Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending on the synthesis method and growth parameters, graphene (Gr) substrates could exhibit, on a single sample, various surface structures, thicknesses, defe…
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Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitaxy of two-dimensional materials such as silicene. However, depending on the synthesis method and growth parameters, graphene (Gr) substrates could exhibit, on a single sample, various surface structures, thicknesses, defects, and step heights. These structures noticeably affect the growth mode of epitaxial layers, e.g. turning the layer-by-layer growth into the Volmer-Weber growth promoted by defect-assisted nucleation. In this work, the growth of silicon on chemical vapor deposited epitaxial Gr (1 ML Gr/1ML Gr buffer) on 6H-SiC(0001) substrate is investigated by a combination of atomic force microscopy (AFM), scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and Raman spectroscopy measurements. It is shown that the perfect control of full-scale almost defect-free 1 ML Gr with a single surface structure and the ultra-clean conditions for molecular beam epitaxy (MBE) deposition of silicon represent key prerequisites for ensuring the growth of extended silicene sheets on epitaxial graphene.
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Submitted 15 March, 2022;
originally announced March 2022.
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Hydrogen-mediated CVD epitaxy of Graphene on SiC: growth mechanism and atomic configuration
Authors:
Zouhour Ben Jabra,
Isabelle Berbezier,
Adrien Michon,
Mathieu Koudia,
Elie Assaf,
Antoine Ronda,
Paola Castrucci,
Maurizio De Crescenzi,
Holger Vach,
Mathieu Abel
Abstract:
Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer scale epitaxy of Gr remains challenging, hampering applications in microelectronics. With this study we shed light on the generic mechanism which produces the coexistence of two different types of Gr domains, whose propor…
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Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer scale epitaxy of Gr remains challenging, hampering applications in microelectronics. With this study we shed light on the generic mechanism which produces the coexistence of two different types of Gr domains, whose proportion can be carefully controlled by tuning the H2 flow rate. For the first time, we show that the growth of Gr using CVD under H2/Ar flow rate proceeds in two stages. Firstly, the nucleation of free-standing epitaxial graphene on hydrogen (H-Gr) occurs, then H-atoms eventually desorb from either step edges or defects. This gives rise, for H2 flow rate below a critical value, to the formation of (6x6)Gr domains on 6H-SiC(0001). The front of H-desorption progresses proportionally to the reduction of H2. Using a robust and generic X-ray photoelectron spectroscopy (XPS) analysis, we realistically quantify the proportions of H-Gr and (6x6)Gr domains of a Gr film synthetized in any experimental conditions. Scanning tunnelling microscopy supports the XPS measurements. From these results we can deduce that the H- assisted CVD growth of Gr developed here is a unique method to grow fully free-standing H-Gr on the contrary to the method consisting of H-intercalation below epitaxial Gr on buffer layer. These results are of crucial importance for future applications of Gr/SiC(0001) in nanoelectronics, providing the groundwork for the use of Gr as an optimal template layer for Van der Waals homo- and hetero-epitaxy.
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Submitted 1 February, 2021;
originally announced February 2021.
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Role of Quantum Confinement in Luminescence Efficiency of Group IV Nanostructures
Authors:
E. G. Barbagiovanni,
D. J. Lockwood,
N. L. Rowell,
R. N. Costa Filho,
I. Berbezier,
G. Amiard,
L. Favre,
A. Ronda,
M. Faustini,
D. Grosso
Abstract:
Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for each Ge QD sample only when $E_{G}\sim (D^2+D)^{-1}$. We identified that above $D\approx$ 6.2 nm: $E_{G}\sim D^{-1}$ due to a changing effective mass (EM), while…
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Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for each Ge QD sample only when $E_{G}\sim (D^2+D)^{-1}$. We identified that above $D\approx$ 6.2 nm: $E_{G}\sim D^{-1}$ due to a changing effective mass (EM), while below $D\approx$ 4.6 nm: $E_{G}\sim D^{-2}$ due to electron/ hole confinement. We propose that as the QD size is initially reduced, the EM is reduced, which increases the Bohr radius and interface scattering until eventually pure quantum confinement effects dominate at small $D$.
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Submitted 22 January, 2014; v1 submitted 9 December, 2013;
originally announced December 2013.
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Orientation dependence of the elastic instability on strained SiGe films
Authors:
J. -N. Aqua,
A. Gouyé,
T. Auphan,
I. Berbezier,
T. Frisch,
A. Ronda
Abstract:
At low strain, SiGe films on Si substrates undergo a continuous nucleationless morphological evolution known as the Asaro-Tiller-Grinfeld instability. We demonstrate experimentally that this instability develops on Si(001) but not on Si(111) even after long annealing. Using a continuum description of this instability, we determine the origin of this difference. When modeling surface diffusion in p…
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At low strain, SiGe films on Si substrates undergo a continuous nucleationless morphological evolution known as the Asaro-Tiller-Grinfeld instability. We demonstrate experimentally that this instability develops on Si(001) but not on Si(111) even after long annealing. Using a continuum description of this instability, we determine the origin of this difference. When modeling surface diffusion in presence of wetting, elasticity and surface energy anisotropy, we find a retardation of the instability on Si(111) due to a strong dependence of the instability onset as function of the surface stiffness. This retardation is at the origin of the inhibition of the instability on experimental time scales even after long annealing.
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Submitted 16 November, 2010;
originally announced November 2010.
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Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: effect of Ge concentration and biaxial stress
Authors:
A. Portavoce,
P. Gas,
I. Berbezier,
A. Ronda,
J. S. Christensen,
B. Svensson
Abstract:
Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy (MBE) were used in order to study B surface segregation during growth and B lattice diffusion. Ge concentration and stress effects were separated. Analysis of B segregation during growth shows that: i) for layers in epitaxy on (100)Si), B segregation decreases with increasing Ge concentration, i.e. with increased compress…
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Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy (MBE) were used in order to study B surface segregation during growth and B lattice diffusion. Ge concentration and stress effects were separated. Analysis of B segregation during growth shows that: i) for layers in epitaxy on (100)Si), B segregation decreases with increasing Ge concentration, i.e. with increased compressive stress, ii) for unstressed layers, B segregation increases with Ge concentration, iii) at constant Ge concentration, B segregation increases for layers in tension and decreases for layers in compression. The contrasting behaviors observed as a function of Ge concentration in compressively stressed and unstressed layers can be explained by an increase of the equilibrium segregation driving force induced by Ge additions and an increase of near-surface diffusion in compressively stressed layers. Analysis of lattice diffusion shows that: i) in unstressed layers, B lattice diffusion coefficient decreases with increasing Ge concentration, ii) at constant Ge concentration, the diffusion coefficient of B decreases with compressive biaxial stress and increases with tensile biaxial stress, iii) the volume of activation of B diffusion () is positive for biaxial stress while it is negative in the case of hydrostatic pressure. This confirms that under a biaxial stress the activation volume is reduced to the relaxation volume.
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Submitted 10 September, 2004;
originally announced September 2004.
