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Inelastic Light Scattering Spectroscopy of Magnons and Phonons in Nickel Oxide: Effects of Temperature
Authors:
M. M. Lacerda,
F. Kargar,
E. Aytan,
R. Samnakay,
B. Debnath,
J. X. Li,
A. Khitun,
R. K. Lake,
J. Shi,
A. A. Balandin
Abstract:
We report results of an investigation of the temperature dependence of the magnon and phonon frequencies in NiO. A combination of Brillouin - Mandelstam and Raman spectroscopies allowed us to elucidate the evolution of the phonon and magnon spectral signatures from the Brillouin zone center (GHz range) to the second-order peaks from the zone boundary (THz range). The temperature-dependent behavior…
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We report results of an investigation of the temperature dependence of the magnon and phonon frequencies in NiO. A combination of Brillouin - Mandelstam and Raman spectroscopies allowed us to elucidate the evolution of the phonon and magnon spectral signatures from the Brillouin zone center (GHz range) to the second-order peaks from the zone boundary (THz range). The temperature-dependent behavior of the magnon and phonon bands in the NiO spectrum indicates the presence of antiferromagnetic (AF) order fluctuation or a persistent AF state at temperatures above the Neel temperature (T=523 K). Tuning the intensity of the excitation laser provides a method for disentangling the features of magnons from acoustic phonons without the application of a magnetic field. Our results are useful for interpretation of the inelastic-light scattering spectrum of NiO, and add to the knowledge of its magnon properties important for THz spintronic devices.
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Submitted 14 February, 2017;
originally announced February 2017.
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Magnetic and Thermal Transport Properties of Permanent Magnets with Anisotropic Grain Structure
Authors:
A. D. Volodchenkov,
S. Ramirez,
R. Samnakay,
R. Salgado,
Y. Kodera,
A. A. Balandin,
J. E. Garay
Abstract:
Nanostructured permanent magnets are gaining increasing interest and importance for applications such as generators and motors. Thermal management is a key concern since performance of permanent magnets decreases with temperature. We investigated the magnetic and thermal transport properties of rare-earth free nanostructured SrFe12O19 magnets produced by the current activated pressure assisted den…
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Nanostructured permanent magnets are gaining increasing interest and importance for applications such as generators and motors. Thermal management is a key concern since performance of permanent magnets decreases with temperature. We investigated the magnetic and thermal transport properties of rare-earth free nanostructured SrFe12O19 magnets produced by the current activated pressure assisted densification. The synthesized magnets have aligned grains such that their magnetic easy axis is perpendicular to their largest surface area to maximize their magnetic performance. The SrFe12O19 magnets have fine grain sizes in the cross-plane direction and substantially larger grain sizes in the in-plane direction. It was found that this microstructure results in approximately a factor of two higher thermal conductivity in the in-plane direction, providing an opportunity for effective cooling. The phonons are the dominant heat carriers in this type of permanent magnets near room temperature. Temperature and direction dependent thermal conductivity measurements indicate that both Umklapp and grain boundary scattering are important in the in-plane direction, where the characteristic grain size is relatively large, while grain boundary scattering dominates the cross-plane thermal transport. The investigated nano/microstructural design strategy should translate well to other material systems and thus have important implications for thermal management of nanostructured permanent magnets.
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Submitted 15 December, 2016;
originally announced December 2016.
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Breakdown Current Density in BN-Capped Quasi-1D TaSe3 Metallic Nanowires: Prospects of Interconnect Applications
Authors:
Maxim A. Stolyarov,
Guanxiong Liu,
Matthew A. Bloodgood,
Ece Aytan,
Chenglong Jiang,
Rameez Samnakay,
Tina T. Salguero,
Denis L. Nika,
Krassimir N. Bozhilov,
Alexander A. Balandin
Abstract:
We report results of investigation of the current-carrying capacity of nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate mm-long TaSe3 wires with lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that TaS…
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We report results of investigation of the current-carrying capacity of nanowires made from the quasi-1D van der Waals metal tantalum triselenide capped with quasi-2D boron nitride. The chemical vapor transport method followed by chemical and mechanical exfoliation were used to fabricate mm-long TaSe3 wires with lateral dimensions in the 20 to 70 nm range. Electrical measurements establish that TaSe3/h-BN nanowire heterostructures have a breakdown current density exceeding 10 MA/cm2 - an order-of-magnitude higher than that in copper. Some devices exhibited an intriguing step-like breakdown, which can be explained by the atomic thread bundle structure of the nanowires. The quasi-1D single crystal nature of TaSe3 results in low surface roughness and the absence of grain boundaries; these features potentially can enable the downscaling of these wires to lateral dimensions in the few-nm range. These results suggest that quasi-1D van der Waals metals have potential for applications in the ultimately downscaled local interconnects.
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Submitted 11 April, 2016;
originally announced April 2016.
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The Commensurate-Incommensurate Charge-Density-Wave Transition and Phonon Zone Folding in 1T-TaSe2 Thin Films
Authors:
R. Samnakay,
D. Wickramaratne,
T. R. Pope,
R. K. Lake,
T. T. Salguero,
A. A. Balandin
Abstract:
Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 K and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin…
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Bulk 1T-TaSe2 exhibits unusually high charge density wave (CDW) transition temperatures of 600 K and 473 K below which the material exists in the incommensurate (I-CDW) and the commensurate (C-CDW) charge-density-wave phases, respectively. The C-CDW reconstruction of the lattice coincides with new Raman peaks resulting from zone-folding of phonon modes from middle regions of the original Brillouin zone back to the Gamma point. The C-CDW transition temperatures as a function of film thickness are determined from the evolution of these new Raman peaks and they are found to decrease from 473K to 413K as the film thicknesses decrease from 150 nm to 35 nm. A comparison of the Raman data with ab initio calculations of both the normal and C-CDW phases gives a consistent picture of the zone-folding of the phonon modes following lattice reconstruction. In the I-CDW phase, the loss of translational symmetry coincides with a strong suppression and broadening of the Raman peaks. The observed change in the C-CDW transition temperature is consistent with total energy calculations of bulk and monolayer 1T-TaSe2.
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Submitted 23 March, 2015;
originally announced March 2015.
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Low-Frequency 1/f Noise in MoS2 Thin-Film Transistors: Comparison of Single and Multilayer Structures
Authors:
S. L. Rumyantsev,
C. Jiang,
R. Samnakay,
M. S. Shur,
A. A. Balandin
Abstract:
We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/f noise in "thick" MoS2 tr…
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We report on the transport and low-frequency noise measurements of MoS2 thin-film transistors with "thin" (2-3 atomic layers) and "thick" (15-18 atomic layers) channels. The back-gated transistors made with the relatively thick MoS2 channels have advantages of the higher electron mobility and lower noise level. The normalized noise spectral density of the low-frequency 1/f noise in "thick" MoS2 transistors is of the same level as that in graphene. The MoS2 transistors with the atomically thin channels have substantially higher noise levels. It was established that, unlike in graphene devices, the noise characteristics of MoS2 transistors with "thick" channels (15-18 atomic planes) could be described by the McWhorter model. Our results indicate that the channel thickness optimization is crucial for practical applications of MoS2 thin-film transistors.
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Submitted 5 March, 2015;
originally announced March 2015.
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High-Temperature Performance of MoS2 Thin-Film Transistors: DC and Pulse Current-Voltage Characteristics
Authors:
C. Jiang,
S. L. Rumyantsev,
R. Samnakay,
M. S. Shur,
A. A. Balandin
Abstract:
The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the DC and pulse measurements shows that the DC sub - linear and super - linear output characteristics of MoS…
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The measurements of the high - temperature current - voltage characteristics of MoS2 thin - film transistors show that the devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the DC and pulse measurements shows that the DC sub - linear and super - linear output characteristics of MoS2 thin - films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, an intriguing phenomenon of the "memory step" - a kink in the drain current - occurs at zero gate voltage irrespective of the threshold voltage value. The memory step effect was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The obtained results suggest new applications for MoS2 thin - film transistors in extreme - temperature electronics and sensors.
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Submitted 20 December, 2014;
originally announced December 2014.
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Selective Chemical Vapor Sensing with Few-Layer MoS2 Thin-Film Transistors
Authors:
R. Samnakay,
C. Jiang,
S. L. Rumyantsev,
M. S. Shur,
A. A. Balandin
Abstract:
We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film field-effect transistors were fabricated on Si/SiO2 substrates and intentionally aged for a month to verify reliability and achieve better current stability. T…
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We demonstrated selective gas sensing with MoS2 thin-film transistors using the change in the channel conductance, characteristic transient time and low-frequency current fluctuations as the sensing parameters. The back-gated MoS2 thin-film field-effect transistors were fabricated on Si/SiO2 substrates and intentionally aged for a month to verify reliability and achieve better current stability. The same devices with the channel covered by 10 nm of Al2O3 were used as reference samples. The exposure to ethanol, acetonitrile, toluene, chloroform, and methanol vapors results in drastic changes in the source-drain current. The current can increase or decrease by more than two-orders of magnitude depending on the analyte. The reference devices with coated channel did not show any response. It was established that transient time of the current change and the normalized spectral density of the low-frequency current fluctuations can be used as additional sensing parameters for selective gas detection with thin-film MoS2 transistors.
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Submitted 19 November, 2014;
originally announced November 2014.
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Low-Frequency 1/f Noise in Molybdenum Disulfide Transistors
Authors:
J. Renteria,
R. Samnakay,
S. L. Rumyantsev,
P. Goli,
M. S. Shur,
A. A. Balandin
Abstract:
We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuatio…
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We report on the results of the low-frequency (1/f, where f is frequency) noise measurements in MoS2 field-effect transistors revealing the relative contributions of the MoS2 channel and Ti/Au contacts to the overall noise level. The investigation of the 1/f noise was performed for both as fabricated and aged transistors. It was established that the McWhorter model of the carrier number fluctuations describes well the 1/f noise in MoS2 transistors, in contrast to what is observed in graphene devices. The trap densities extracted from the 1/f noise data for MoS2 transistors, are 1.5 x 10^19 eV-1cm-3 and 2 x 10^20 eV-1cm-3 for the as fabricated and aged devices, respectively. It was found that the increase in the noise level of the aged MoS2 transistors is due to the channel rather than the contact degradation. The obtained results are important for the proposed electronic applications of MoS2 and other van der Waals materials.
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Submitted 24 December, 2013;
originally announced December 2013.
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All-Metallic Electrically-Gated Tantalum Diselenide Switches and Logic Circuits
Authors:
J. Renteria,
R. Samnakay,
C. Jiang,
T. R. Pope,
P. Goli,
Z. Yan,
D. Wickramaratne,
T. T. Salguero,
A. G. Khitun,
R. K. Lake,
A. A. Balandin
Abstract:
We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, u…
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We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used in principle for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.
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Submitted 24 December, 2013;
originally announced December 2013.
