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Gate-controlled conductance enhancement from quantum Hall channels along graphene p-n junctions
Authors:
Endre Tóvári,
Péter Makk,
Ming-Hao Liu,
Peter Rickhaus,
Zoltán Kovács-Krausz,
Klaus Richter,
Christian Schönenberger,
Szabolcs Csonka
Abstract:
The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to new conducting channels forming in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are de…
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The formation of quantum Hall channels inside the bulk of graphene is studied using various contact and gate geometries. p-n junctions are created along the longitudinal direction of samples, and enhanced conductance is observed in the case of bipolar doping due to new conducting channels forming in the bulk, whose position, propagating direction and, in one geometry, coupling to electrodes are determined by the gate-controlled filling factor across the device. This effect could be exploited to probe the behavior and interaction of quantum Hall channels protected against uncontrolled scattering at the edges.
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Submitted 26 June, 2016;
originally announced June 2016.
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Signatures of single quantum dots in graphene nanoribbons within the quantum Hall regime
Authors:
E. Tóvári,
P. Makk,
P. Rickhaus,
C. Schönenberger,
S. Csonka
Abstract:
We report on the observation of periodic conductance oscillations near quantum Hall plateaus in suspended graphene nanoribbons. They are attributed to single quantum dots that form in the narrowest part of the ribbon, in the valleys and hills of a disorder potential. In a wide flake with two gates, a double-dot system's signature has been observed. Electrostatic confinement is enabled in single-la…
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We report on the observation of periodic conductance oscillations near quantum Hall plateaus in suspended graphene nanoribbons. They are attributed to single quantum dots that form in the narrowest part of the ribbon, in the valleys and hills of a disorder potential. In a wide flake with two gates, a double-dot system's signature has been observed. Electrostatic confinement is enabled in single-layer graphene due to the gaps that form between Landau levels, suggesting a way to create gate-defined quantum dots that can be accessed with quantum Hall edge states.
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Submitted 7 January, 2016;
originally announced January 2016.
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Clean carbon nanotubes coupled to superconducting impedance-matching circuits
Authors:
V. Ranjan,
G. Puebla-Hellmann,
M. Jung,
T. Hasler,
A. Nunnenkamp,
M. Muoth,
C. Hierold,
A. Wallraff,
C. Schönenberger
Abstract:
Coupling carbon nanotube devices to microwave circuits offers a significant increase in bandwidth and signal-to-noise ratio. These facilitate fast non-invasive readouts important for quantum information processing, shot noise and correlation measurements. However, creation of a device that unites a low-disorder nanotube with a low-loss microwave resonator has so far remained a challenge, due to fa…
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Coupling carbon nanotube devices to microwave circuits offers a significant increase in bandwidth and signal-to-noise ratio. These facilitate fast non-invasive readouts important for quantum information processing, shot noise and correlation measurements. However, creation of a device that unites a low-disorder nanotube with a low-loss microwave resonator has so far remained a challenge, due to fabrication incompatibility of one with the other. Employing a mechanical transfer method, we successfully couple a nanotube to a gigahertz superconducting matching circuit and thereby retain pristine transport characteristics such as the control over formation of, and coupling strengths between, the quantum dots. Resonance response to changes in conductance and susceptance further enables quantitative parameter extraction. The achieved near matching is a step forward promising high-bandwidth noise correlation measurements on high impedance devices such as quantum dot circuits.
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Submitted 18 May, 2015;
originally announced May 2015.
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Fabrication of ballistic suspended graphene with local-gating
Authors:
Romain Maurand,
Peter Rickhaus,
Peter Makk,
Samuel Hess,
Endre Tovari,
Clevin Handschin,
Markus Weiss,
Christian Schonenberger
Abstract:
Herein we discuss the fabrication of ballistic suspended graphene nanostructures supplemented with local gating. Using in-situ current annealing, we show that exceptional high mobilities can be obtained in these devices. A detailed description is given of the fabrication of bottom and different top-gate structures, which enable the realization of complex graphene structures. We have studied the ba…
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Herein we discuss the fabrication of ballistic suspended graphene nanostructures supplemented with local gating. Using in-situ current annealing, we show that exceptional high mobilities can be obtained in these devices. A detailed description is given of the fabrication of bottom and different top-gate structures, which enable the realization of complex graphene structures. We have studied the basic building block, the p-n junction in detail, where a striking oscillating pattern was observed, which can be traced back to Fabry-Perot oscillations that are localized in the electronic cavities formed by the local gates. Finally we show some examples how the method can be extended to incorporate multi-terminal junctions or shaped graphene. The structures discussed here enable the access to electron-optics experiments in ballistic graphene.
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Submitted 16 September, 2014;
originally announced September 2014.
