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Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped Bi$_{2}$Te$_{3}$
Authors:
Shailja Sharma,
Shiv Kumar,
Girish C. Tewari,
Gargee Sharma,
Eike F. Schwier,
Kenya Shimada,
A. Taraphder,
C. S. Yadav
Abstract:
We have performed magneto-transport and high-resolution angle-resolved photoelectron spectroscopy (ARPES) measurements on palladium (Pd) doped topological insulator Pd$_{x}$Bi$_{2}$Te$_{3}$ (0 $\leq$ x $\leq$ 0.20) single crystals. We have observed unusually high values of magnetoresistance ($\sim$ 1500%) and mobility ($\sim$ 93000 cm$^{2}$V$^{-1}$s$^{-1}$) at low temperatures for pristine Bi2Te…
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We have performed magneto-transport and high-resolution angle-resolved photoelectron spectroscopy (ARPES) measurements on palladium (Pd) doped topological insulator Pd$_{x}$Bi$_{2}$Te$_{3}$ (0 $\leq$ x $\leq$ 0.20) single crystals. We have observed unusually high values of magnetoresistance ($\sim$ 1500%) and mobility ($\sim$ 93000 cm$^{2}$V$^{-1}$s$^{-1}$) at low temperatures for pristine Bi2Te3 that decrease on Pd doping. The Shubnikov-de Haas (SdH) oscillations have been detected for x = 0.05, 0.10, confirming the presence of 2D topological surface states (TSSs) for these samples. The Hall measurement shows the crossover from n-type charge carriers in pristine Bi$_{2}$Te$_{3}$ to p-type charge carriers upon Pd doping. The ARPES measurements show that the conduction band crosses the Fermi level for pristine Bi$_{2}$Te$_{3}$, and the Dirac point of the TSSs and bulk-derived valence bands indicated shift to lower binding energy upon Pd doping in a rigid-band-like way up to x $\sim$0.10. Based on the comparison of the parameters obtained from the SdH and ARPES measurements, the reduction in the kF value in the magneto-transport measurements likely due to the band bending induced by the Schottky barrier.
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Submitted 1 March, 2023; v1 submitted 3 January, 2022;
originally announced January 2022.
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Behavior of gapped and ungapped Dirac cones in an antiferromagnetic topological metal, SmBi
Authors:
Anup Pradhan Sakhya,
Shiv Kumar,
Arindam Pramanik,
Ram Prakash Pandeya,
Rahul Verma,
Bahadur Singh,
Sawani Datta,
Souvik Sasmal,
Rajib Mondal,
Eike F. Schwier,
Kenya Shimada,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
We studied the behavior of nontrivial Dirac fermion states in an antiferromagnetic metal SmBi using angle-resolved photoemission spectroscopy (ARPES). The experimental results exhibit multiple Fermi pockets around $\overlineΓ$ and $\overline{M}$ points along with a band inversion in the spectrum along the $\overlineΓ$-$\overline{M}$ line consistent with the density functional theory results. In ad…
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We studied the behavior of nontrivial Dirac fermion states in an antiferromagnetic metal SmBi using angle-resolved photoemission spectroscopy (ARPES). The experimental results exhibit multiple Fermi pockets around $\overlineΓ$ and $\overline{M}$ points along with a band inversion in the spectrum along the $\overlineΓ$-$\overline{M}$ line consistent with the density functional theory results. In addition, ARPES data reveal Dirac cones at $\overlineΓ$ and $\overline{M}$ points within the energy gap of the bulk bands. The Dirac cone at $\overline{M}$ exhibit a distinct Dirac point and is intense in the high photon energy data while the Dirac cone at $\overlineΓ$ is intense at low photon energies. Employing ultra-high-resolution ARPES, we discover destruction of a Fermi surface constituted by the surface states across the Neél temperature of 9 K. Interestingly, the Dirac cone at $\overlineΓ$ is found to be gapped at 15 K and the behavior remains similar across the magnetic transition. These results reveal complex momentum dependent gap formation and fermi surface destruction across magnetic transition in an exotic correlated topological material; the interplay between magnetism and topology in this system calls for ideas beyond existing theoretical models.
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Submitted 25 August, 2022; v1 submitted 25 September, 2021;
originally announced September 2021.
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Sample-dependent Dirac point gap in MnBi$_2$Te$_4$ and its response to the applied surface charge: a combined photoemission and ab initio study
Authors:
A. M. Shikin,
D. A. Estyunin,
N. L. Zaitsev,
D. Glazkova,
I. I. Klimovskikh,
S. Filnov,
A. G. Rybkin,
E. F. Schwier,
S. Kumar,
A. Kimura,
N. Mamedov,
Z. Aliev,
M. B. Babanly,
K. Kokh,
O. E. Tereshchenko,
M. M. Otrokov,
E. V. Chulkov,
K. A. Zvezdin,
A. K. Zvezdin
Abstract:
Recently discovered intrinsic antiferromagnetic topological insulator MnBi$_2$Te$_4$ presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimen…
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Recently discovered intrinsic antiferromagnetic topological insulator MnBi$_2$Te$_4$ presents an exciting platform for realization of the quantum anomalous Hall effect and a number of related phenomena at elevated temperatures. An important characteristic making this material attractive for applications is its predicted large magnetic gap at the Dirac point (DP). However, while the early experimental measurements reported on large DP gaps, a number of recent studies claimed to observe a gapless dispersion of the MnBi$_2$Te$_4$ Dirac cone. Here, using micro($μ$)-laser angle-resolved photoemission spectroscopy, we study the electronic structure of 15 different MnBi$_2$Te$_4$ samples, grown by two different chemists groups. Based on the careful energy distribution curves analysis, the DP gaps between 15 and 65 meV are observed, as measured below the Néel temperature at about 10-16 K. At that, roughly half of the studied samples show the DP gap of about 30 meV, while for a quarter of the samples the gaps are in the 50 to 60 meV range. Summarizing the results of both our and other groups, in the currently available MnBi$_2$Te$_4$ samples the DP gap can acquire an arbitrary value between a few and several tens of meV. Further, based on the density functional theory, we discuss a possible factor that might contribute to the reduction of the DP gap size, which is the excess surface charge that can appear due to various defects in surface region. We demonstrate that the DP gap is influenced by the applied surface charge and even can be closed, which can be taken advantage of to tune the MnBi$_2$Te$_4$ DP gap size.
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Submitted 9 July, 2021;
originally announced July 2021.
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Charge-Density-Wave-Induced Peak-Dip-Hump Structure and the Multiband Superconductivity in a Kagome Superconductor CsV$_{3}$Sb$_{5}$
Authors:
Rui Lou,
Alexander Fedorov,
Qiangwei Yin,
Andrii Kuibarov,
Zhijun Tu,
Chunsheng Gong,
Eike F. Schwier,
Bernd Büchner,
Hechang Lei,
Sergey Borisenko
Abstract:
The entanglement of charge density wave (CDW), superconductivity, and topologically nontrivial electronic structure has recently been discovered in the kagome metal $A$V$_3$Sb$_5$ ($A$ = K, Rb, Cs) family. With high-resolution angle-resolved photoemission spectroscopy, we study the electronic properties of CDW and superconductivity in CsV$_3$Sb$_5$. The spectra around $\bar{K}$ is found to exhibit…
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The entanglement of charge density wave (CDW), superconductivity, and topologically nontrivial electronic structure has recently been discovered in the kagome metal $A$V$_3$Sb$_5$ ($A$ = K, Rb, Cs) family. With high-resolution angle-resolved photoemission spectroscopy, we study the electronic properties of CDW and superconductivity in CsV$_3$Sb$_5$. The spectra around $\bar{K}$ is found to exhibit a peak-dip-hump structure associated with two separate branches of dispersion, demonstrating the isotropic CDW gap opening below $E_{\rm F}$. The peak-dip-hump lineshape is contributed by linearly dispersive Dirac bands in the lower branch and a dispersionless flat band close to $E_{\rm F}$ in the upper branch. The electronic instability via Fermi surface nesting could play a role in determining these CDW-related features. The superconducting gap of $\sim$0.4 meV is observed on both the electron band around $\barΓ$ and the flat band around $\bar{K}$, implying the multiband superconductivity. The finite density of states (DOS) at $E_{\rm F}$ in the CDW phase are most likely in favor of the emergence of multiband superconductivity, particularly the enhanced DOS associated with the flat band. Our results not only shed light on the controversial origin of the CDW, but also offer insights into the relationship between CDW and superconductivity.
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Submitted 8 January, 2022; v1 submitted 11 June, 2021;
originally announced June 2021.
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Spectroscopic Evidence on Realization of a Genuine Topological Nodal Line Semimetal in LaSbTe
Authors:
Yang Wang,
Yuting Qian,
Meng Yang,
Hongxiang Chen,
Cong Li,
Zhiyun Tan,
Yongqing Cai,
Wenjuan Zhao,
Shunye Gao,
Ya Feng,
Shiv Kumar,
Eike F. Schwier,
Lin Zhao,
Hongming Weng,
Youguo Shi,
Gang Wang,
Youting Song,
Yaobo Huang,
Kenya Shimada,
Zuyan Xu,
X. J. Zhou,
Guodong Liu
Abstract:
The nodal line semimetals have attracted much attention due to their unique topological electronic structure and exotic physical properties. A genuine nodal line semimetal is qualified by the presence of Dirac nodes along a line in the momentum space that are protected against the spin-orbit coupling. In addition, it requires that the Dirac points lie close to the Fermi level allowing to dictate t…
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The nodal line semimetals have attracted much attention due to their unique topological electronic structure and exotic physical properties. A genuine nodal line semimetal is qualified by the presence of Dirac nodes along a line in the momentum space that are protected against the spin-orbit coupling. In addition, it requires that the Dirac points lie close to the Fermi level allowing to dictate the macroscopic physical properties. Although the material realization of nodal line semimetals have been theoretically predicted in numerous compounds, only a few of them have been experimentally verified and the realization of a genuine nodal line semimetal is particularly rare. Here we report the realization of a genuine nodal line semimetal in LaSbTe. We investigated the electronic structure of LaSbTe by band structure calculations and angle-resolved photoemission (ARPES) measurements. Taking spin-orbit coupling into account, our band structure calculations predict that a nodal line is formed in the boundary surface of the Brillouin zone which is robust and lies close to the Fermi level. The Dirac nodes along the X-R line in momentum space are directly observed in our ARPES measurements and the energies of these Dirac nodes are all close to the Fermi level. These results constitute clear evidence that LaSbTe is a genuine nodal line semimetal,providing a new platform to explore for novel phenomena and possible applications associated with the nodal line semimetals.
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Submitted 26 February, 2021;
originally announced February 2021.
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Observation of spin-momentum-layer locking in centrosymmetric BiOI
Authors:
Ke Zhang,
Shixuan Zhao,
Zhanyang Hao,
Shiv Kumar,
Eike. F. Schwier,
Yingjie Zhang,
Hongyi Sun,
Yuan Wang,
Yujie Hao,
Xiaoming Ma,
Cai Liu,
Xiaoxiao Wang,
Koji Miyamoto,
Taichi Okuda,
Chang Liu,
Jiawei Mei,
Kenya Shimada,
Chaoyu Chen,
Qihang Liu
Abstract:
Spin polarization effects in nonmagnetic materials are generally believed as an outcome of spin-orbit coupling provided that the global inversion symmetry is lacking, also known as 'spin-momentum locking'. The recently discovered hidden spin polarization indicates that specific atomic site asymmetry could also induce measurable spin polarization, leading to a paradigm shift to centrosymmetric crys…
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Spin polarization effects in nonmagnetic materials are generally believed as an outcome of spin-orbit coupling provided that the global inversion symmetry is lacking, also known as 'spin-momentum locking'. The recently discovered hidden spin polarization indicates that specific atomic site asymmetry could also induce measurable spin polarization, leading to a paradigm shift to centrosymmetric crystals for potential spintronic applications. Here, combining spin- and angle-resolved photoemission spectroscopy and theoretical calculations, we report distinct spin-layer locking phenomena surrounding different high-symmetry momenta in a centrosymmetric, layered material BiOI. The measured spin is highly polarized along the Brillouin zone boundary, while is almost vanishing around the zone center due to its nonsymmorphic crystal structure. Our work not only demonstrates the existence of hidden spin polarization, but also uncovers the microscopic mechanism of the way spin, momentum and layer locking to each other, shedding lights on the design metrics for future spintronic devices.
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Submitted 29 December, 2020;
originally announced December 2020.
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Superconductivity and Fermi Surface Nesting in the Candidate Dirac Semimetal NbC
Authors:
Dayu Yan,
Daiyu Geng,
Qiang Gao,
Zhihai Cui,
Changjiang Yi,
Ya Feng,
Chunyao Song,
Hailan Luo,
Meng Yang,
Masashi Arita,
Shiv Kumar,
Eike F. Schwier,
Kenya Shimada,
Lin Zhao,
Kehui Wu,
Hongmini Weng,
Lan Chen,
X. J. Zhou,
Zhijun Wang,
Youguo Shi,
Baojie Feng
Abstract:
We report the synthesis of single-crystal NbC, a transition metal carbide with various unusual properties. Transport, magnetic susceptibility, and specific heat measurements demonstrate that NbC is a conventional superconductor with a superconducting transition temperature ($T_c$) of 11.5 K. Our theoretical calculations show that NbC is a type-II Dirac semimetal with strong Fermi surface nesting,…
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We report the synthesis of single-crystal NbC, a transition metal carbide with various unusual properties. Transport, magnetic susceptibility, and specific heat measurements demonstrate that NbC is a conventional superconductor with a superconducting transition temperature ($T_c$) of 11.5 K. Our theoretical calculations show that NbC is a type-II Dirac semimetal with strong Fermi surface nesting, which is supported by our ARPES measurement results. We also observed the superconducting gaps of NbC using angle-resolved photoemission spectroscopy (ARPES) and found some unconventional behaviors. These intriguing superconducting and topological properties, combined with the high corrosion resistance, make NbC an ideal platform for both fundamental research and device applications.
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Submitted 30 October, 2020; v1 submitted 27 October, 2020;
originally announced October 2020.
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Surface band characters of Weyl semimetal candidate material MoTe$_2$ revealed by one-step ARPES theory
Authors:
Ryota Ono,
Alberto Marmodoro,
Jakub Schusser,
Yositaka Nakata,
Eike F. Schwier,
Jürgen Braun,
Hubert Ebert,
Ján Minár,
Kazuyuki Sakamoto,
Peter Krüger
Abstract:
The layered 2D-material MoTe$_2$ in the T$_d$ crystal phase is a semimetal which has theoretically been predicted to possess topologically non-trivial bands corresponding to Weyl fermions. Clear experimental evidence by angle-resolved photoemission spectroscopy (ARPES) is, however, lacking, which calls for a careful examination of the relation between ground state band structure calculations and A…
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The layered 2D-material MoTe$_2$ in the T$_d$ crystal phase is a semimetal which has theoretically been predicted to possess topologically non-trivial bands corresponding to Weyl fermions. Clear experimental evidence by angle-resolved photoemission spectroscopy (ARPES) is, however, lacking, which calls for a careful examination of the relation between ground state band structure calculations and ARPES intensity plots. Here we report a study of the near Fermi-energy band structure of MoTe$_2$(T$_d$) by means of ARPES measurements, density functional theory, and one-step-model ARPES calculations. Good agreement between theory and experiment is obtained. We analyze the orbital character of the surface bands and its relation to the ARPES polarization dependence. We find that light polarization has a major efect on which bands can be observed by ARPES. For s-polarized light, the ARPES intensity is dominated by subsurface Mo d orbitals, while p-polarized light reveals the bands composed mainly derived from Te p orbitals. Suitable light polarization for observing either electron or hole pocket are determined
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Submitted 3 March, 2021; v1 submitted 25 October, 2020;
originally announced October 2020.
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Half-Magnetic Topological Insulator
Authors:
Ruie Lu,
Hongyi Sun,
Shiv Kumar,
Yuan Wang,
Mingqiang Gu,
Meng Zeng,
Yu-Jie Hao,
Jiayu Li,
Jifeng Shao,
Xiao-Ming Ma,
Zhanyang Hao,
Ke Zhang,
Wumiti Mansuer,
Jiawei Mei,
Yue Zhao,
Cai Liu,
Ke Deng,
Wen Huang,
Bing Shen,
Kenya Shimada,
Eike F. Schwier,
Chang Liu,
Qihang Liu,
Chaoyu Chen
Abstract:
Topological magnets are a new family of quantum materials providing great potential to realize emergent phenomena, such as quantum anomalous Hall effect and axion-insulator state. Here we present our discovery that stoichiometric ferromagnet MnBi8Te13 with natural heterostructure MnBi2Te4-(Bi2Te3)3 is an unprecedented half-magnetic topological insulator, with the magnetization existing at the MnBi…
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Topological magnets are a new family of quantum materials providing great potential to realize emergent phenomena, such as quantum anomalous Hall effect and axion-insulator state. Here we present our discovery that stoichiometric ferromagnet MnBi8Te13 with natural heterostructure MnBi2Te4-(Bi2Te3)3 is an unprecedented half-magnetic topological insulator, with the magnetization existing at the MnBi2Te4 surface but not at the opposite surface terminated by triple Bi2Te3 layers. Our angle-resolved photoemission spectroscopy measurements unveil a massive Dirac gap at the MnBi2Te4 surface, and gapless Dirac cone on the other side. Remarkably, the Dirac gap (~28 meV) at MnBi2Te4 surface decreases monotonically with increasing temperature and closes right at the Curie temperature, thereby representing the first smoking-gun spectroscopic evidence of magnetization-induced topological surface gap among all known magnetic topological materials. We further demonstrate theoretically that the half-magnetic topological insulator is desirable to realize the half-quantized surface anomalous Hall effect, which serves as a direct proof of the general concept of axion electrodynamics in condensed matter systems.
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Submitted 9 September, 2020;
originally announced September 2020.
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Orbital Complexity in Intrinsic Magnetic Topological Insulators MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$
Authors:
R. C. Vidal,
H. Bentmann,
J. I. Facio,
T. Heider,
P. Kagerer,
C. I. Fornari,
T. R. F. Peixoto,
T. Figgemeier,
S. Jung,
C. Cacho,
B. Büchner,
J. van den Brink,
C. M. Schneider,
L. Plucinski,
E. F. Schwier,
K. Shimada,
M. Richter,
A. Isaeva,
F. Reinert
Abstract:
Using angle-resolved photoelectron spectroscopy (ARPES), we investigate the surface electronic structure of the magnetic van der Waals compounds MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$, the $n=$~1 and 2 members of a modular (Bi$_2$Te$_3$)$_n$(MnBi$_2$Te$_4$) series, which have attracted recent interest as intrinsic magnetic topological insulators. Combining circular dichroic, spin-resolved and photon…
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Using angle-resolved photoelectron spectroscopy (ARPES), we investigate the surface electronic structure of the magnetic van der Waals compounds MnBi$_4$Te$_7$ and MnBi$_6$Te$_{10}$, the $n=$~1 and 2 members of a modular (Bi$_2$Te$_3$)$_n$(MnBi$_2$Te$_4$) series, which have attracted recent interest as intrinsic magnetic topological insulators. Combining circular dichroic, spin-resolved and photon-energy-dependent ARPES measurements with calculations based on density functional theory, we unveil complex momentum-dependent orbital and spin textures in the surface electronic structure and disentangle topological from trivial surface bands. We find that the Dirac-cone dispersion of the topologial surface state is strongly perturbed by hybridization with valence-band states for Bi$_2$Te$_3$-terminated surfaces but remains preserved for MnBi$_2$Te$_4$-terminated surfaces. Our results firmly establish the topologically non-trivial nature of these magnetic van der Waals materials and indicate that the possibility of realizing a quantized anomalous Hall conductivity depends on surface termination.
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Submitted 7 May, 2021; v1 submitted 15 July, 2020;
originally announced July 2020.
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Emergent of the flat band and superstructures in the VSe2 / Bi2Se3 system
Authors:
Turgut Yilmaz,
Xiao Tong,
Zhongwei Dai,
Jerzy T. Sadowski,
Eike F. Schwier,
Kenya Shimada,
Sooyeon Hwang,
Kim Kisslinger,
Konstantine Kaznatcheev,
Elio Vescovo,
Boris Sinkovic
Abstract:
Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible…
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Dispersionless flat bands are proposed to be a fundamental ingredient to achieve the various sought after quantum states of matter including high-temperature superconductivity1-4 and fractional quantum Hall effect5-6. Materials with such peculiar electronic states, however, are very rare and often exhibit very complex band structures. Here, we report on the emergence of a flat band with a possible insulating ground state in the sub-monolayer VSe2 / Bi2Se3 heterostructure by means of angle-resolved photoemission spectroscopy and scanning tunneling microscopy. The flat band is dispersionless along the kll and kz momenta, filling the entire Brillouin zone, and it exhibits a complex circular dichroism signal reversing the sign at several points of the Brillouin zone. These properties together with the presence of a Moiré patterns in VSe2 suggest that the flat band is not a trivial disorder or confinement effect and could even be topologically non-trivial. Another intriguing finding is that the flat band does not modify the Dirac cone of Bi2Se3 around the Dirac point. Furthermore, we found that the flat band and the Dirac surface states of Bi2Se3 have opposite energy shifts with electron doping. This opens a novel way of controlling the spin texture of photocurrents as well as the transport properties of the heterostructure. These features make this flat band remarkably distinguishable from previous findings and our methodology can be applied to other systems opening a promising pathway to realize strongly correlated quantum effects in topological materials.
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Submitted 23 June, 2020;
originally announced June 2020.
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Experimental evidence of monolayer AlB$_2$ with symmetry-protected Dirac cones
Authors:
Daiyu Geng,
Kejun Yu,
Shaosheng Yue,
Jin Cao,
Wenbin Li,
Dashuai Ma,
Chaoxi Cui,
Masashi Arita,
Shiv Kumar,
Eike F. Schwier,
Kenya Shimada,
Peng Cheng,
Lan Chen,
Kehui Wu,
Yugui Yao,
Baojie Feng
Abstract:
Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. Our theoretical calculations revealed that the monolayer AlB$_2$ hosts several D…
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Monolayer AlB$_2$ is composed of two atomic layers: honeycomb borophene and triangular aluminum. In contrast with the bulk phase, monolayer AlB$_2$ is predicted to be a superconductor with a high critical temperature. Here, we demonstrate that monolayer AlB$_2$ can be synthesized on Al(111) via molecular beam epitaxy. Our theoretical calculations revealed that the monolayer AlB$_2$ hosts several Dirac cones along the $Γ$--M and $Γ$--K directions; these Dirac cones are protected by crystal symmetries and are thus resistant to external perturbations. The extraordinary electronic structure of the monolayer AlB$_2$ was confirmed via angle-resolved photoemission spectroscopy measurements. These results are likely to stimulate further research interest to explore the exotic properties arising from the interplay of Dirac fermions and superconductivity in two-dimensional materials.
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Submitted 22 April, 2020;
originally announced April 2020.
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Spectroscopic realization of large surface gap in a doped magnetic topological insulator
Authors:
Xiao-Ming Ma,
Yufei Zhao,
Ke Zhang,
Rui'e Lu,
Jiayu Li,
Qiushi Yao,
Jifeng Shao,
Xuefeng Wu,
Meng Zeng,
Yu-Jie Hao,
Shiv Kumar,
Zhanyang Hao,
Yuan Wang,
Xiang-Rui Liu,
Huiwen Shen,
Hongyi Sun,
Jiawei Mei,
Koji Miyamoto,
Taichi Okuda,
Masashi Arita,
Eike F. Schwier,
Kenya Shimada,
Ke Deng,
Cai Liu,
Yue Zhao
, et al. (3 additional authors not shown)
Abstract:
Realization of the quantum anomalous Hall effect and axion electrodynamics in topological materials are among the paradigmatic phenomena in condensed matter physics. Recently, signatures of both phases are observed to exist in thin films of MnBi$_2$Te$_4$, a stoichiometric antiferromagnetic topological insulator. Direct evidence of the bulk topological magnetoelectric response in an axion insulato…
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Realization of the quantum anomalous Hall effect and axion electrodynamics in topological materials are among the paradigmatic phenomena in condensed matter physics. Recently, signatures of both phases are observed to exist in thin films of MnBi$_2$Te$_4$, a stoichiometric antiferromagnetic topological insulator. Direct evidence of the bulk topological magnetoelectric response in an axion insulator requires an energy gap at its topological surface state (TSS). However, independent spectroscopic experiments revealed that such a surface gap is absent, or much smaller than previously thought, in MnBi$_2$Te$_4$. Here, we utilize angle resolved photoemission spectroscopy and density functional theory calculations to demonstrate that a sizable TSS gap unexpectedly exists in Sb-doped MnBi$_2$Te$_4$. This gap is found to be topologically nontrivial, insensitive to the bulk antiferromagnetic-paramagnetic transition, while enlarges along with increasing Sb concentration. Our work shows that Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$ is a potential platform to observe the key features of the high-temperature axion insulator state, such as the topological magnetoelectric responses and half-integer quantum Hall effects.
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Submitted 20 April, 2020;
originally announced April 2020.
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Nature of the Dirac gap modulation and surface magnetic interaction in axion antiferromagnetic topological insulator MnBi$_2$Te$_4$
Authors:
A. M. Shikin,
D. A. Estyunin,
I. I. Klimovskikh,
S. O. Filnov,
E. F. Schwier,
S. Kumar,
K. Myamoto,
T. Okuda,
A. Kimura,
K. Kuroda,
K. Yaji,
S. Shin,
Y. Takeda,
Y. Saitoh,
Z. S. Aliev,
N. T. Mamedov,
I. R. Amiraslanov,
M. B. Babanly,
M. M. Otrokov,
S. V. Eremeev,
E. V. Chulkov
Abstract:
Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (1…
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Modification of the gap at the Dirac point (DP) in antiferromagnetic (AFM) axion topological insulator MnBi$_2$Te$_4$ and its electronic and spin structure has been studied by angle- and spin-resolved photoemission spectroscopy (ARPES) under laser excitation with variation of temperature (9-35~K), light polarization and photon energy. We have distinguished both a large (62-67~meV) and a reduced (15-18~meV) gap at the DP in the ARPES dispersions, which remains open above the Néel temperature ($T_\mathrm{N}=24.5$~K). We propose that the gap above $T_\mathrm{N}$ remains open due to short-range magnetic field generated by chiral spin fluctuations. Spin-resolved ARPES, XMCD and circular dichroism ARPES measurements show a surface ferromagnetic ordering for large-gap sample and significantly reduced effective magnetic moment for the reduced-gap sample. These effects can be associated with a shift of the topological DC state towards the second Mn layer due to structural defects and mechanical disturbance, where it is influenced by a compensated effect of opposite magnetic moments.
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Submitted 9 April, 2020;
originally announced April 2020.
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Distinct Topological Surface States on the Two Terminations of MnBi$_4$Te$_7$
Authors:
Xuefeng Wu,
Jiayu Li,
Xiao-Ming Ma,
Yu Zhang,
Yuntian Liu,
Chun-Sheng Zhou,
Jifeng Shao,
Qiaoming Wang,
Yu-Jie Hao,
Yue Feng,
Eike F. Schwier,
Shiv Kumar,
Hongyi Sun,
Pengfei Liu,
Kenya Shimada,
Koji Miyamoto,
Taichi Okuda,
Kedong Wang,
Maohai Xie,
Chaoyu Chen,
Qihang Liu,
Chang Liu,
Yue Zhao
Abstract:
The recent discovered intrinsic magnetic topological insulator MnBi2Te4 have been met with unusual success in hosting emergent phenomena such as the quantum anomalous Hall effect and the axion insulator states. However, the surface-bulk correspondence of the Mn-Bi-Te family, composed by the superlattice-like MnBi2Te4/(Bi2Te3)n (n = 0, 1, 2, 3 ...) layered structure, remains intriguing but elusive.…
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The recent discovered intrinsic magnetic topological insulator MnBi2Te4 have been met with unusual success in hosting emergent phenomena such as the quantum anomalous Hall effect and the axion insulator states. However, the surface-bulk correspondence of the Mn-Bi-Te family, composed by the superlattice-like MnBi2Te4/(Bi2Te3)n (n = 0, 1, 2, 3 ...) layered structure, remains intriguing but elusive. Here, by using scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) techniques, we unambiguously assign the two distinct surface states of MnBi4Te7 (n = 1) to the quintuple-layer (QL) Bi2Te3 termination and the septuple-layer (SL) MnBi2Te4 termination, respectively. A comparison of the experimental observations with theoretical calculations reveals the diverging topological behaviors, especially the hybridization effect between magnetic and nonmagnetic layers, on the two terminations: a gap on the QL termination originating from the topological surface states of the QL hybridizing with the bands of the beneath SL, and a gapless Dirac-cone band structure on the SL termination with time-reversal symmetry. The quasi-particle interference patterns further confirm the topological nature of the surface states for both terminations, continuing far above the Fermi energy. The QL termination carries a spin-helical Dirac state with hexagonal warping, while at the SL termination, a strongly canted helical state from the surface lies between a pair of Rashba-split states from its neighboring layer. Our work elucidates an unprecedented hybridization effect between the building blocks of the topological surface states, and also reveals the termination-dependent time-reversal symmetry breaking in a magnetic topological insulator, rendering an ideal platform to realize the half-integer quantum Hall effect and relevant quantum phenomena.
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Submitted 1 February, 2020;
originally announced February 2020.
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Direct Measurement of the Electronic Structure and band gap nature of atomic-layer-thick 2H-MoTe2
Authors:
Wenjuan Zhao,
Xieyu Zhou,
Dayu Yan,
Yuan Huang,
Cong Li,
Qiang Gao,
Hongtao Rong,
Yongqing Cai,
Eike F. Schwier,
Dianxing Ju,
Cheng Shen,
Yang Wang,
Yu Xu,
Wei Ji,
Youguo Shi,
Lin Zhao,
Lihong Bao,
Qingyan Wang,
Kenya Shimada,
Xutang Tao,
Hongjun Gao,
Zuyan Xu,
Xingjiang Zhou,
Guodong Liu
Abstract:
The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using standard high resolution angle-resolved photoemission spectroscopy (ARPES). A direct band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2. Similar v…
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The millimeter sized monolayer and bilayer 2H-MoTe2 single crystal samples are prepared by a new mechanical exfoliation method. Based on such high-quality samples, we report the first direct electronic structure study on them, using standard high resolution angle-resolved photoemission spectroscopy (ARPES). A direct band gap of 0.924eV is found at K in the rubidium-doped monolayer MoTe2. Similar valence band alignment is also observed in bilayer MoTe2,supporting an assumption of a analogous direct gap semiconductor on it. Our measurements indicate a rather large band splitting of 212meV at the valence band maximum (VBM) in monolayer MoTe2, and the splitting is systematically enlarged with layer stacking, from monolayer to bilayer and to bulk. Meanwhile, our PBE band calculation on these materials show excellent agreement with ARPES results. Some fundamental electronic parameters are derived from the experimental and calculated electronic structures. Our findings lay a foundation for further application-related study on monolayer and bilayer MoTe2.
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Submitted 16 January, 2020;
originally announced January 2020.
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Hybridization-Induced Gapped and Gapless States on the Surfaces of Magnetic Topological Insulators
Authors:
Xiao-Ming Ma,
Zhongjia Chen,
Eike F. Schwier,
Yang Zhang,
Yu-Jie Hao,
Rui'e Lu,
Jifeng Shao,
Yuanjun Jin,
Meng Zeng,
Xiang-Rui Liu,
Zhanyang Hao,
Ke Zhang,
Wumiti Mansuer,
Shiv Kumar,
Chunyao Song,
Yuan Wang,
Boyan Zhao,
Cai Liu,
Ke Deng,
Jiawei Mei,
Kenya Shimada,
Yue Zhao,
Xingjiang Zhou,
Bing Shen,
Wen Huang
, et al. (3 additional authors not shown)
Abstract:
The layered MnBi2nTe3n+1 family represents the first intrinsic antiferromagnetic topological insulator (AFM TI, protected by a combination symmetry ) ever discovered, providing an ideal platform to explore novel physics such as quantum anomalous Hall effect at elevated temperature and axion electrodynamics. Recent angle-resolved photoemission spectroscopy (ARPES) experiments on this family have re…
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The layered MnBi2nTe3n+1 family represents the first intrinsic antiferromagnetic topological insulator (AFM TI, protected by a combination symmetry ) ever discovered, providing an ideal platform to explore novel physics such as quantum anomalous Hall effect at elevated temperature and axion electrodynamics. Recent angle-resolved photoemission spectroscopy (ARPES) experiments on this family have revealed that all terminations exhibit (nearly) gapless topological surface states (TSSs) within the AFM state, violating the definition of the AFM TI, as the surfaces being studied should be -breaking and opening a gap. Here we explain this curious paradox using a surface-bulk band hybridization picture. Combining ARPES and first-principles calculations, we prove that only an apparent gap is opened by hybridization between TSSs and bulk bands. The observed (nearly) gapless features are consistently reproduced by tight-binding simulations where TSSs are coupled to a Rashba-split bulk band. The Dirac-cone-like spectral features are actually of bulk origin, thus not sensitive to the-breaking at the AFM surfaces. This picture explains the (nearly) gapless behaviour found in both Bi2Te3- and MnBi2Te4-terminated surfaces and is applicable to all terminations of MnBi2nTe3n+1 family. Our findings highlight the role of band hybridization, superior to magnetism in this case, in shaping the general surface band structure in magnetic topological materials for the first time.
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Submitted 31 December, 2019;
originally announced December 2019.
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Band gap opening at the Dirac point in Co/BiSbTeSe2(0001) system
Authors:
A. K. Kaveev,
A. G. Banshchikov,
A. N. Terpitskiy,
V. A. Golyashov,
O. E. Tereshchenko,
K. A. Kokh,
D. A. Estyunin,
A. M. Shikin,
E. F. Schwier
Abstract:
Sub-angstrom Co coverage, being deposited on BiSbTeSe2(0001) surface at 200-330 C, opens a band gap at the Dirac point, with the shift of the Dirac point position caused by RT adsorbate pre-deposition. Temperature dependent measurements in 15-150 K range have shown no band gap width change. This fact indicates the nonmagnetic nature of the gap which may be attributed to the chemical hybridization…
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Sub-angstrom Co coverage, being deposited on BiSbTeSe2(0001) surface at 200-330 C, opens a band gap at the Dirac point, with the shift of the Dirac point position caused by RT adsorbate pre-deposition. Temperature dependent measurements in 15-150 K range have shown no band gap width change. This fact indicates the nonmagnetic nature of the gap which may be attributed to the chemical hybridization of surface states upon the introduction of Co adatoms, which decrease crystallographic symmetry and eliminate topological protection of the surface states.
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Submitted 26 December, 2019;
originally announced December 2019.
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Spectroscopic evidence for electron-boson coupling in electron-doped Sr$_2$IrO$_4$
Authors:
Yong Hu,
Xiang Chen,
S. -T. Peng,
C. Lane,
M. Matzelle,
Z. -L. Sun,
M. Hashimoto,
D. -H. Lu,
E. F. Schwier,
M. Arita,
T. Wu,
R. S. Markiewicz,
K. Shimada,
X. -H. Chen,
Z. -X. Shen,
A. Bansil,
S. D. Wilson,
J. -F. He
Abstract:
The pseudogap, d-wave superconductivity and electron-boson coupling are three intertwined key ingredients in the phase diagram of the cuprates. Sr$_2$IrO$_4$ is a 5d-electron counterpart of the cuprates in which both the pseudogap and a d-wave instability have been observed. Here, we report spectroscopic evidence for the presence of the third key player in electron-doped Sr$_2$IrO$_4$: electron-bo…
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The pseudogap, d-wave superconductivity and electron-boson coupling are three intertwined key ingredients in the phase diagram of the cuprates. Sr$_2$IrO$_4$ is a 5d-electron counterpart of the cuprates in which both the pseudogap and a d-wave instability have been observed. Here, we report spectroscopic evidence for the presence of the third key player in electron-doped Sr$_2$IrO$_4$: electron-boson coupling. A kink in nodal dispersion is observed with an energy scale of ~50 meV. The strength of the kink changes with doping, but the energy scale remains the same. These results provide the first noncuprate platform for exploring the relationship between the pseudogap, d-wave instability and electron-boson coupling in doped Mott insulators.
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Submitted 11 December, 2019;
originally announced December 2019.
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$^{105}$Pd NMR and NQR study of the cubic heavy fermion system Ce$_3$Pd$_{20}$Si$_6$
Authors:
Ivan Jakovac,
Mladen Horvatić,
Eike F. Schwier,
Andrey Prokofiev,
Silke Paschen,
Hiroyuki Mitamura,
Toshiro Sakakibara,
Mihael S. Grbić
Abstract:
We report $^{105}$Pd NMR and NQR measurements on a single crystal of Ce$_3$Pd$_{20}$Si$_6$, where antiferroquadrupolar and antiferromagnetic orders develop at low temperature. From the analysis of NQR and NMR spectra, we have determined the electric field gradient (EFG) tensors and the anisotropic Knight shift ($K$) components for both inequivalent Pd sites - Pd($32f$) and Pd($48h$). The observed…
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We report $^{105}$Pd NMR and NQR measurements on a single crystal of Ce$_3$Pd$_{20}$Si$_6$, where antiferroquadrupolar and antiferromagnetic orders develop at low temperature. From the analysis of NQR and NMR spectra, we have determined the electric field gradient (EFG) tensors and the anisotropic Knight shift ($K$) components for both inequivalent Pd sites - Pd($32f$) and Pd($48h$). The observed EFG values are in excellent agreement with our state-of-the-art DFT calculations. The principal values of the quadrupolar coupling are $(20.37 \pm 0.02)$ MHz and $(5.45 \pm 0.02)$ MHz, for the Pd($32f$) and Pd($48h$) site, respectively, which is large compared to the Larmor frequency defined by the gyromagnetic constant $γ= 1.94838$ MHz/T for $^{105}$Pd. Therefore, the complete knowledge of $K$ and the EFG tensors is crucial to establish the correspondence between NMR spectra and crystallographic sites, which is needed for a complete analysis of the magnetic structure, static spin susceptibility, and the spin-lattice relaxation rate data and a better understanding of the groundstate of Ce$_3$Pd$_{20}$Si$_6$.
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Submitted 28 January, 2020; v1 submitted 22 November, 2019;
originally announced November 2019.
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In-plane antiferromagnetic moments in axion topological insulator candidate EuIn$_2$As$_2$
Authors:
Yang Zhang,
Ke Deng,
Xiao Zhang,
Meng Wang,
Yuan Wang,
Cai Liu,
Jia-Wei Mei,
Shiv Kumar,
Eike F. Schwier,
Kenya Shimada,
Chaoyu Chen,
Bing Shen
Abstract:
Topological insulator with antiferromagnetic order can serve as an ideal platform for the realization of axion electrodynamics. In this paper, we report a systematic study of the axion topological insulator candidate EuIn$_2$As$_2$. A linear energy dispersion across the Fermi level confirms the existence of the proposed hole-type Fermi pocket. Spin-flop transitions occur with magnetic fields appli…
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Topological insulator with antiferromagnetic order can serve as an ideal platform for the realization of axion electrodynamics. In this paper, we report a systematic study of the axion topological insulator candidate EuIn$_2$As$_2$. A linear energy dispersion across the Fermi level confirms the existence of the proposed hole-type Fermi pocket. Spin-flop transitions occur with magnetic fields applied within the $ab$-plane while are absent for fields parallel to the $c$-axis. Anisotropic magnetic phase diagrams are observed and the orientation of the ground magnetic moment is found to be within the $ab$-plane. The magnetoresistivity for EuIn$_2$As$_2$ behaves non-monotonic as a function of field strength. It exhibits angular dependent evolving due to field-driven and temperature-driven magnetic states. These results indicate that the magnetic states of EuIn$_2$As$_2$ strongly affect the transport properties as well as the topological nature.
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Submitted 5 November, 2019;
originally announced November 2019.
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Role of a higher dimensional interaction in stabilizing charge density waves in quasi-1D NbSe$_3$ revealed by angle-resolved photoemission spectroscopy
Authors:
Christopher W. Nicholson,
Eike F. Schwier,
Kenya Shimada,
Helmut Berger,
Moritz Hoesch,
Christophe Berthod,
Claude Monney
Abstract:
We revisit charge density wave (CDW) behavior in the archetypal quasi-one-dimensional (quasi-1D) material NbSe$_3$ by high-resolution angle-resolved photoemission spectroscopy measurements utilizing a microfocused laser with a photon energy of 6.3 eV. We present a detailed view of the electronic structure of this complex multiband system and unambiguously resolve CDW gaps at the Fermi level (…
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We revisit charge density wave (CDW) behavior in the archetypal quasi-one-dimensional (quasi-1D) material NbSe$_3$ by high-resolution angle-resolved photoemission spectroscopy measurements utilizing a microfocused laser with a photon energy of 6.3 eV. We present a detailed view of the electronic structure of this complex multiband system and unambiguously resolve CDW gaps at the Fermi level ($E_F$). By employing a tight-binding model, we argue that these gaps are the result of interband coupling between electronic states that reside predominantly on distinct 1D chains within the material. Two such localized states are found to couple to an electronic state that extends across multiple 1D chains, highlighting the importance of a higher-dimensional interaction in stabilizing the CDW ordering in this material. In addition, the temperature evolution of intrachain gaps caused by the CDW periodicities far below $E_F$ deviate from the behavior expected for a Peierls-type mechanism driven by nesting; the upper and lower bands of the renormalized CDW dispersions maintain a fixed peak-to-peak distance while the gaps are gradually removed at higher temperatures. This points toward a gradual loss of long-range phase coherence as the dominant effect in reducing the CDW order parameter, which may correspond to the loss of coherence between the coupled chains. Furthermore, one of the gaps is observed above the bulk and surface CDW transition temperatures, implying the persistence of short-range incoherent CDW order. The influence of such higher-dimensional interactions likely plays an important role in a range of low-dimensional systems.
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Submitted 21 January, 2020; v1 submitted 1 November, 2019;
originally announced November 2019.
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Rashba-like spin splitting along three momentum directions in trigonal layered PtBi2
Authors:
Ya Feng,
Qi Jiang,
Baojie Feng,
Meng Yang,
Tao Xu,
Wenjing Liu,
Xiufu Yang,
Masashi Arita,
Eike F. Schwier,
Kenya Shimada,
Harald O. Jeschke,
Ronny Thomale,
Youguo Shi,
Xianxin Wu,
Shaozhu Xiao,
Shan Qiao,
Shaolong He
Abstract:
Spin-orbit coupling (SOC) has gained much attention for its rich physical phenomena and highly promising applications in spintronic devices. The Rashba-type SOC in systems with inversion symmetry breaking is particularly attractive for spintronics applications since it allows for flexible manipulation of spin current by external electric fields. Here, we report the discovery of a giant anisotropic…
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Spin-orbit coupling (SOC) has gained much attention for its rich physical phenomena and highly promising applications in spintronic devices. The Rashba-type SOC in systems with inversion symmetry breaking is particularly attractive for spintronics applications since it allows for flexible manipulation of spin current by external electric fields. Here, we report the discovery of a giant anisotropic Rashba-like spin splitting along three momentum directions (3D Rashba-like spin splitting) with a helical spin polarization around the M points in the Brillouin zone of trigonal layered PtBi2. Due to its inversion asymmetry and reduced symmetry at the M point, Rashba-type as well as Dresselhaus-type SOC cooperatively yield a 3D spin splitting with alpha~ 4.36 eVA in PtBi2. The experimental realization of 3D Rashba-like spin splitting not only has fundamental interests but also paves the way to the future exploration of a new class of material with unprecedented functionalities for spintronics applications.
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Submitted 28 October, 2019;
originally announced October 2019.
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Gapless surface Dirac cone in antiferromagnetic topological insulator MnBi$_2$Te$_4$
Authors:
Yu-Jie Hao,
Pengfei Liu,
Yue Feng,
Xiao-Ming Ma,
Eike F. Schwier,
Masashi Arita,
Shiv Kumar,
Chaowei Hu,
Rui'e Lu,
Meng Zeng,
Yuan Wang,
Zhanyang Hao,
Hongyi Sun,
Ke Zhang,
Jiawei Mei,
Ni Ni,
Liusuo Wu,
Kenya Shimada,
Chaoyu Chen,
Qihang Liu,
Chang Liu
Abstract:
The recent discovered antiferromagnetic topological insulators in Mn-Bi-Te family with intrinsic magnetic ordering have rapidly drawn broad interest since its cleaved surface state is believed to be gapped, hosting the unprecedented axion states with half-integer quantum Hall effect. Here, however, we show unambiguously by using high-resolution angle-resolved photoemission spectroscopy that a gapl…
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The recent discovered antiferromagnetic topological insulators in Mn-Bi-Te family with intrinsic magnetic ordering have rapidly drawn broad interest since its cleaved surface state is believed to be gapped, hosting the unprecedented axion states with half-integer quantum Hall effect. Here, however, we show unambiguously by using high-resolution angle-resolved photoemission spectroscopy that a gapless Dirac cone at the (0001) surface of MnBi$_2$Te$_4$ exists between the bulk band gap. Such unexpected surface state remains unchanged across the bulk Néel temperature, and is even robust against severe surface degradation, indicating additional topological protection. Through symmetry analysis and $\textit{ab}$-$\textit{initio}$ calculations we consider different types of surface reconstruction of the magnetic moments as possible origins giving rise to such linear dispersion. Our results reveal that the intrinsic magnetic topological insulator hosts a rich platform to realize various topological phases such as topological crystalline insulator and time-reversal-preserved topological insulator, by tuning the magnetic configurations.
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Submitted 9 October, 2019; v1 submitted 8 July, 2019;
originally announced July 2019.
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Pressure induced Superconductivity and location of Fermi energy at Dirac point in BiSbTe3
Authors:
Vinod K. Gangwar,
Shiv Kumar,
Mahima Singh,
Labanya Ghosh,
Zhang Yufeng,
Prashant Shahi,
Swapnil Patil,
Eike F. Schwier,
Kenya Shimada,
Yoshiya Uwatoko,
Sandip Chatterjee
Abstract:
We have grown single-crystal BiSbTe3 3D TI sample and studied structural, TE as well as pressure dependent magneto-transport properties. Large positive Seebeck coefficient confirmed the p-type nature of BiSbTe3, which is consistent with Hall measurement. We have also studied the electronic band structure using Laser-based ARPES, which revealed the existence of a Dirac-cone like metallic surface st…
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We have grown single-crystal BiSbTe3 3D TI sample and studied structural, TE as well as pressure dependent magneto-transport properties. Large positive Seebeck coefficient confirmed the p-type nature of BiSbTe3, which is consistent with Hall measurement. We have also studied the electronic band structure using Laser-based ARPES, which revealed the existence of a Dirac-cone like metallic surface state in BiSbTe3 with a Dirac Point situated exactly at the Fermi level. Additionally, superconductivity emerges under pressure of 8 GPa with a critical temperature of ~2.5 K. With further increase of pressure, the superconducting transition temperature (Tc) increases and at 14 GPa it shows the maximum Tc (~3.3 K).
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Submitted 25 June, 2019;
originally announced June 2019.
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Electronic structure and $H$-$T$ phase diagram of Eu(Fe$_{1-x}$Rh$_x$)$_2$As$_2$
Authors:
Shaozhu Xiao,
Darren C. Peets,
Wei Liu,
Shiju Zhang,
Ya Feng,
Wen-He Jiao,
Guang-Han Cao,
Eike F. Schwier,
Kenya Shimada,
Cong Li,
Xingjiang Zhou,
Shaolong He
Abstract:
The iron-based superconductors represent a promising platform for high-temperature superconductivity, but the interactions underpinning their pairing present a puzzle. The EuFe$_2$As$_2$ family is unique among these materials for having magnetic order which onsets within the superconducting state, just below the superconducting transition. Superconductivity and magnetic order are normally antagoni…
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The iron-based superconductors represent a promising platform for high-temperature superconductivity, but the interactions underpinning their pairing present a puzzle. The EuFe$_2$As$_2$ family is unique among these materials for having magnetic order which onsets within the superconducting state, just below the superconducting transition. Superconductivity and magnetic order are normally antagonistic and often vie for the same unpaired electrons, but in this family the magnetism arises from largely localized Eu moments and they coexist, with the competition between these evenly-matched opponents leading to reentrant superconducting behavior. To help elucidate the physics in this family and the interactions between the magnetic order and superconductivity, we investigate the $H$--$T$ phase diagram near optimal Rh doping through specific heat, resistivity, and magnetization measurements, and study the electronic structure by angular-resolved photoemission spectroscopy. The competition between the Eu and FeAs layers may offer a route to directly accessing the electronic structure under effective magnetic fields via ARPES, which is ordinarily a strictly zero-field technique.
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Submitted 1 August, 2019; v1 submitted 27 May, 2019;
originally announced May 2019.
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Superstructure-induced splitting of Dirac cones in silicene
Authors:
B. Feng,
H. Zhou,
Y. Feng,
H. Liu,
S. He,
I. Matsuda,
L. Chen,
E. F. Schwier,
K. Shimada,
S. Meng,
K. Wu
Abstract:
Atomic scale engineering of two-dimensional materials could create devices with rich physical and chemical properties. External periodic potentials can enable the manipulation of the electronic band structures of materials. A prototypical system is 3x3-silicene/Ag(111), which has substrate-induced periodic modulations. Recent angle-resolved photoemission spectroscopy measurements revealed six Dira…
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Atomic scale engineering of two-dimensional materials could create devices with rich physical and chemical properties. External periodic potentials can enable the manipulation of the electronic band structures of materials. A prototypical system is 3x3-silicene/Ag(111), which has substrate-induced periodic modulations. Recent angle-resolved photoemission spectroscopy measurements revealed six Dirac cone pairs at the Brillouin zone boundary of Ag(111), but their origin remains unclear [Proc. Natl. Acad. Sci. USA 113, 14656 (2016)]. We used linear dichroism angle-resolved photoemission spectroscopy, the tight-binding model, and first-principles calculations to reveal that these Dirac cones mainly derive from the original cones at the K (K') points of free-standing silicene. The Dirac cones of free-standing silicene are split by external periodic potentials that originate from the substrate-overlayer interaction. Our results not only confirm the origin of the Dirac cones in the 3x3-silicene/Ag(111) system, but also provide a powerful route to manipulate the electronic structures of two-dimensional materials.
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Submitted 31 January, 2019;
originally announced January 2019.
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Room temperature large spontaneous exchange bias in hard-soft antiferromagnetic composite BiFeO3-TbMnO3
Authors:
Prince Kr. Gupta,
Surajit Ghosh,
Shiv Kumar,
Arkadeb Pal,
Rahul Singh,
Abhishek Singh,
Somnath Roy,
Eike F. Schwier,
Masahiro Sawada,
Takeshi Matsumura,
Kenya Shimada,
Hong-Ji Lin,
Yi-Ying Chin,
A. K. Ghosh,
Sandip Chatterjee
Abstract:
We report the presence of giant spontaneous exchange bias (HSEB) in a hard and soft antiferromagnetic composite of BiFeO3-TbMnO3 (BFO-TMO in 7:3 and 8:2 ratio). The HSEB varies between 5-778Oe, but persists up to room temperature with a maximum near a spin reorientation transition temperature observed from magnetization vs. temperature measurement in Zero-field cooled (ZFC) and Field cooled (FC) m…
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We report the presence of giant spontaneous exchange bias (HSEB) in a hard and soft antiferromagnetic composite of BiFeO3-TbMnO3 (BFO-TMO in 7:3 and 8:2 ratio). The HSEB varies between 5-778Oe, but persists up to room temperature with a maximum near a spin reorientation transition temperature observed from magnetization vs. temperature measurement in Zero-field cooled (ZFC) and Field cooled (FC) modes. Isothermal remnant magnetization measurements at room temperature indicate the presence of an interfacial layer of a 2 dimensional dilute antiferromagnet in a field (2D DAFF). A stable value of the exchange bias has been observed via training effect measurements which signify the role of interfacial exchange coupling in the system. Based on the experimental results we explain the presence of the giant spontaneous exchange bias on the basis of a strong strain-mediated magnetoelectriccoupling induced exchange interaction and the creation of 2D DAFF layer at the interface. Theproperties of this layer are defined by canting and pinning of BFO spins at the interface with TMO due to Fe and Mn interaction. X-ray Magnetic Circular Dichroism (XMCD) confirms the presence of canted antiferromagnetic ordering of BiFeO3, charge transfer between Mn ions and different magnetically coupled layers which play vital role in getting the exchange bias.
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Submitted 8 January, 2019;
originally announced January 2019.
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B-site spin-state and anti-site disorder driven multiple-magnetic phases: Griffiths phase, re-entrant cluster glass and exchange bias in double perovskite Pr$_2$CoFeO$_6$
Authors:
Arkadeb Pal,
P. Singh,
Shiv Kumar,
S. Ghosh,
Sudip Kumar Saha,
Manoranjan Kumar,
Amitabh Das,
Eike F. Schwier,
Masahiro Sawada,
Kenya Shimada,
A. K. Ghosh,
Sandip Chatterjee
Abstract:
We report the comprehensive experimental results identifying the magnetic spin ordering and the magnetization dynamics of a double perovskite Pr2CoFeO6 by employing the (dc and ac) magnetization, powder neutron diffraction (NPD) and X-ray magnetic circular dichroism (XMCD) techniques. X-ray diffraction and neutron diffraction studies revealed that Pr2CoFeO6 adopts a B-site disordered orthorhombic…
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We report the comprehensive experimental results identifying the magnetic spin ordering and the magnetization dynamics of a double perovskite Pr2CoFeO6 by employing the (dc and ac) magnetization, powder neutron diffraction (NPD) and X-ray magnetic circular dichroism (XMCD) techniques. X-ray diffraction and neutron diffraction studies revealed that Pr2CoFeO6 adopts a B-site disordered orthorhombic structure with space group Pnma. Additionally, ab initio band structure calculations performed on this system suggested an insulating anti-ferromagnetic (Fe-Fe) ground state. Magnetometry study showed the system to possess a spectrum of interesting magnetic phases including long range antiferromagnetic (canted) spin ordering (TN ~269 K), Griffiths phase, re-entrant cluster glass (RCG) (TG~ 34 K) and exchange bias. However, the NPD study divulged the exhibition of a long range G-type (below TN ~269 K) of spin ordering by Fe spins. Spin dynamics study by ac susceptibility technique confirmed the system possessing long range ordering at higher temperatureundergoes a RCG transition at ~34 K. Existence of Griffiths phase was confirmed by non-analytic field variation of magnetization and Heisenberg type temporal spin relaxation above long range ordering temperature TN ~269 K. The anti-site disorder related to the B-sites (Co/Fe) is found to be the main driving force forthe observed multiple magnetic phases. Furthermore, the electronic structure probed by the X-ray absorption spectroscopy (XAS) study suggested a nominal valance state of +3 for both of the B-site ions (Co/Fe) which in turn triggered the anti-site disorder in the system. Magnetic, XRD, NPD and XAS analysis yielded a low spin state (LS) for the Co3+ ions. The random non-magnetic dilution of magnetic Fe3+ (HS) ions by Co3+ (LS) ions essentially played a crucial role in manifesting the magnetic properties of the system.
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Submitted 23 October, 2018;
originally announced October 2018.
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Electronic structure by X-ray absorption spectroscopy and observation offield induced unusually slowspin relaxation from magnetic properties in pyrochlore Eu$_{2-x}$Fe$_x$Ti$_2$O$_7$
Authors:
Arkadeb Pal,
Surajit Ghosh,
Shiv Kumar,
Eike F. Schwier,
Masahiro Sawada,
Kenya Shimada,
Mukul Gupta,
D. M. Phase,
A. K. Ghosh,
Sandip Chatterjee
Abstract:
X-ray absorption spectroscopy (XAS) as well as x-ray magnetic circular dichroism (XMCD) and magnetization of hybrid pyrochlore Eu2-xFexTi2O7 were investigated, where the rare earth Eu (4f) was replaced with transition metal Fe (3d) to introduce competing 4f-3d interactions. It is confirmed that the valence states of Eu and Fe ions are formally trivalent while that of Ti ions are tetravalent (3d0).…
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X-ray absorption spectroscopy (XAS) as well as x-ray magnetic circular dichroism (XMCD) and magnetization of hybrid pyrochlore Eu2-xFexTi2O7 were investigated, where the rare earth Eu (4f) was replaced with transition metal Fe (3d) to introduce competing 4f-3d interactions. It is confirmed that the valence states of Eu and Fe ions are formally trivalent while that of Ti ions are tetravalent (3d0). The analysis yielded that the tetravalent Ti ions occupy octahedral sites with distorted Oh symmetry which is triggered by the presence of vacant 8a anionic site adjacent to TiO6 octahedra. Further study with Fe doping revealed that it essentially reduces the octahedral distortion by introducing anionic disorder (migration of 48f oxygen ions to 8a site). Analysis of O K edge XAS spectra further confirmed the Fe substitution causing the systematic change in the ligand (O2-) coordination of the Ti4+ cations. On the other hand, a new field induced transition (with Fe doping) at low temperature T* (4 K<T*< 8 K) in ac susceptibility with unusually slow spin relaxation was observed. The transition shifted towards higher temperatures both with increasing applied field and Fe concentration. However, the single ion spin freezing (Tf ~35 K) appears to be suppressed with Fe substitution. Interestingly, small amount of Fe3+ ion substitution showed significant enhancement in the dc magnetization at lower temperatures (<100 K). Analysis further indicated rise of dipolar FM exchange interaction with Fe doping.
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Submitted 23 October, 2018;
originally announced October 2018.
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Evidence for quasi-one-dimensional charge density wave in CuTe by angle-resolved photoemission spectroscopy
Authors:
Kenan Zhang,
Xiaoyu Liu,
Haoxiong Zhang,
Ke Deng,
Mingzhe Yan,
Wei Yao,
Mingtian Zheng,
Eike F. Schwier,
Kenya Shimada,
Jonathan D. Denlinger,
Yang Wu,
Wenhui Duan,
Shuyun Zhou
Abstract:
We report the electronic structure of CuTe with a high charge density wave (CDW) transition temperature Tc = 335 K by angle-resolved photoemission spectroscopy (ARPES). An anisotropic charge density wave gap with a maximum value of 190 meV is observed in the quasi-one-dimensional band formed by Te px orbitals. The CDW gap can be filled by increasing temperature or electron doping through in situ p…
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We report the electronic structure of CuTe with a high charge density wave (CDW) transition temperature Tc = 335 K by angle-resolved photoemission spectroscopy (ARPES). An anisotropic charge density wave gap with a maximum value of 190 meV is observed in the quasi-one-dimensional band formed by Te px orbitals. The CDW gap can be filled by increasing temperature or electron doping through in situ potassium deposition. Combining the experimental results with calculated electron scattering susceptibility and phonon dispersion, we suggest that both Fermi surface nesting and electron-phonon coupling play important roles in the emergence of the CDW.
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Submitted 28 November, 2018; v1 submitted 18 October, 2018;
originally announced October 2018.
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Prediction and observation of the first antiferromagnetic topological insulator
Authors:
Mikhail M. Otrokov,
Ilya I. Klimovskikh,
Hendrik Bentmann,
Alexander Zeugner,
Ziya S. Aliev,
Sebastian Gass,
Anja U. B. Wolter,
Alexandra V. Koroleva,
Dmitry Estyunin,
Alexander M. Shikin,
María Blanco-Rey,
Martin Hoffmann,
Alexandra Yu. Vyazovskaya,
Sergey V. Eremeev,
Yury M. Koroteev,
Imamaddin R. Amiraslanov,
Mahammad B. Babanly,
Nazim T. Mamedov,
Nadir A. Abdullayev,
Vladimir N. Zverev,
Bernd Büchner,
Eike F. Schwier,
Shiv Kumar,
Akio Kimura,
Luca Petaccia
, et al. (12 additional authors not shown)
Abstract:
Despite immense advances in the field of topological materials, the antiferromagnetic topological insulator (AFMTI) state, predicted in 2010, has been resisting experimental observation up to now. Here, using density functional theory and Monte Carlo method we predict and by means of structural, transport, magnetic, and angle-resolved photoemission spectroscopy measurements confirm for the first t…
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Despite immense advances in the field of topological materials, the antiferromagnetic topological insulator (AFMTI) state, predicted in 2010, has been resisting experimental observation up to now. Here, using density functional theory and Monte Carlo method we predict and by means of structural, transport, magnetic, and angle-resolved photoemission spectroscopy measurements confirm for the first time realization of the AFMTI phase, that is hosted by the van der Waals layered compound MnBi$_2$Te$_4$. An interlayer AFM ordering makes MnBi$_2$Te$_4$ invariant with respect to the combination of the time-reversal ($Θ$) and primitive-lattice translation ($T_{1/2}$) symmetries, $S=ΘT_{1/2}$, which gives rise to the $Z_2$ topological classification of AFM insulators, $Z_2$ being equal to 1 for this material. The $S$-breaking (0001) surface of MnBi$_2$Te$_4$ features a giant bandgap in the topological surface state thus representing an ideal platform for the observation of such long-sought phenomena as the quantized magnetoelectric coupling and intrinsic axion insulator state.
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Submitted 19 September, 2018;
originally announced September 2018.
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Applications for ultimate spatial resolution in LASER based $μ$-ARPES: A FeSe case study
Authors:
E. F. Schwier,
H. Takita,
W. Mansur,
A. Ino,
M. Hoesch,
M. D. Watson,
A. A. Haghighirad,
K. Shimada
Abstract:
Combining Angle resolved photoelectron spectroscopy (ARPES) and a $μ$-focused Laser, we have performed scanning ARPES microscopy measurements of the domain population within the nematic phase of FeSe single crystals. We are able to demonstrate a variation of the domain population density on a scale of a few 10 $μ$m while constraining the upper limit of the single domain size to less than 5 $μm$. T…
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Combining Angle resolved photoelectron spectroscopy (ARPES) and a $μ$-focused Laser, we have performed scanning ARPES microscopy measurements of the domain population within the nematic phase of FeSe single crystals. We are able to demonstrate a variation of the domain population density on a scale of a few 10 $μ$m while constraining the upper limit of the single domain size to less than 5 $μm$. This experiment serves as a demonstration of how combining the advantages of high resolution Laser ARPES and an ultimate control over the spatial dimension can improve investigations of materials by reducing the cross contamination of spectral features of different domains.
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Submitted 21 June, 2018;
originally announced June 2018.
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Shifts and Splittings of the Hole Bands in the Nematic Phase of FeSe
Authors:
Matthew D. Watson,
Amir A. Haghighirad,
Hitoshi Takita,
Wumiti Mansur,
Hideaki Iwasawa,
Eike F. Schwier,
Akihiro Ino,
Moritz Hoesch
Abstract:
We report a high-resolution laser-based angle-resolved photoemission spectroscopy (laser-ARPES) study of single crystals of FeSe, focusing on the temperature-dependence of the hole-like bands around the ${\rm Γ}$ point. As the system cools through the tetragonal-orthorhombic "nematic" structural transition at 90~K, the splitting of the $d_{xz}$/$d_{yz}$ bands is observed to increase by a magnitude…
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We report a high-resolution laser-based angle-resolved photoemission spectroscopy (laser-ARPES) study of single crystals of FeSe, focusing on the temperature-dependence of the hole-like bands around the ${\rm Γ}$ point. As the system cools through the tetragonal-orthorhombic "nematic" structural transition at 90~K, the splitting of the $d_{xz}$/$d_{yz}$ bands is observed to increase by a magnitude of 13 meV. Moreover, the onset of a $\sim$10 meV downward shift of the $d_{xy}$ band is also at 90~K. These measurements provide clarity on the nature, magnitude and temperature-dependence of the band shifts at the ${\rm Γ}$ point in the nematic phase of FeSe.
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Submitted 17 February, 2017;
originally announced February 2017.
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Phonon-Dressed Two-Dimensional Carriers on the ZnO Surface
Authors:
R. Yukawa,
K. Ozawa,
S. Yamamoto,
H. Iwasawa,
K. Shimada,
E. F. Schwier,
K. Yoshimatsu,
H. Kumigashira,
H. Namatame,
M. Taniguchi,
I. Matsuda
Abstract:
Two-dimensional (2D) metallic states formed on the ZnO(10$\bar{1}$0) surface by hydrogen adsorption have been investigated using angle-resolved photoelectron spectroscopy (ARPES). The observed metallic state is characterized by a peak-dip-hump structure at just below the Fermi level and a long tail structure extending up to 600 meV in binding energy. The peak and hump positions are separated by ab…
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Two-dimensional (2D) metallic states formed on the ZnO(10$\bar{1}$0) surface by hydrogen adsorption have been investigated using angle-resolved photoelectron spectroscopy (ARPES). The observed metallic state is characterized by a peak-dip-hump structure at just below the Fermi level and a long tail structure extending up to 600 meV in binding energy. The peak and hump positions are separated by about 70 meV, a value close to the excitation energy of longitudinal optical (LO) phonons. Spectral functions formulated on the basis of the 2D electron-phonon coupling well reproduce the ARPES intensity distribution of the metallic states. This spectral analysis suggests that the 2D electrons accumulated on the ZnO surface couple to the LO phonons and that this coupling is the origin of the anomalous long tail. Our results indicate that the 2D electrons at the ZnO surface are described as the electron liquid model.
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Submitted 23 August, 2016; v1 submitted 19 April, 2016;
originally announced April 2016.
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Localized and mixed valence state of Ce $4f$ in superconducting and ferromagnetic CeO$_{1-x}$F$_{x}$BiS$_{2}$ revealed by x-ray absorption and photoemission spectroscopy
Authors:
T. Sugimoto,
D. Ootsuki,
E. Paris,
A. Iadecola,
M. Salome,
E. F. Schwier,
H. Iwasawa,
K. Shimada,
T. Asano,
R. Higashinaka,
T. D. Matsuda,
Y. Aoki,
N. L. Saini,
T. Mizokawa
Abstract:
We have performed Ce $L_3$-edge x-ray absorption spectroscopy (XAS) and Ce $4d$-$4f$ resonant photoemission spectroscopy (PES) on single crystals of CeO$_{1-x}$F$_x$BiS$_2$ for $x=0.0$ and 0.5 in order to investigate the Ce $4f$ electronic states. In the Ce $L_3$-edge XAS, mixed valence of Ce was found in the $x=0.0$ sample and the F-doping suppresses it, which is consistent with the results on po…
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We have performed Ce $L_3$-edge x-ray absorption spectroscopy (XAS) and Ce $4d$-$4f$ resonant photoemission spectroscopy (PES) on single crystals of CeO$_{1-x}$F$_x$BiS$_2$ for $x=0.0$ and 0.5 in order to investigate the Ce $4f$ electronic states. In the Ce $L_3$-edge XAS, mixed valence of Ce was found in the $x=0.0$ sample and the F-doping suppresses it, which is consistent with the results on polycrystalline samples. As for the resonant PES, we found that the Ce $4f$ electrons in both $x=0.0$ and $0.5$ systems respectively form a flat band at 1.0 eV and 1.4 eV below the Fermi level and there is no contribution to the Fermi surfaces. Interestingly, Ce valence in CeOBiS$_2$ deviates from Ce$^{3+}$ even though Ce $4f$ electrons are localized, indicating the Ce valence is not in a typical valence fluctuation regime. We assume that localized Ce $4f$ in CeOBiS$_2$ is mixed with the unoccupied Bi $6p_z$, which is consistent with the previous local structural study. Based on the analysis of the Ce $L_3$-edge XAS spectra using Anderson's impurity model calculation, we found that the transfer integral becomes smaller increasing the number of Ce $4f$ electrons upon the F substitution for O.
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Submitted 17 August, 2016; v1 submitted 7 April, 2016;
originally announced April 2016.
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Monolayer charge-neutral graphene on platinum with extremely weak electron-phonon coupling
Authors:
Wei Yao,
Eryin Wang,
Ke Deng,
Shuzhen Yang,
Wenyun Wu,
Alexei V. Fedorov,
Sung-Kwan Mo,
Eike F. Schwier,
Mingtian Zheng,
Yohei Kojima,
Hideaki Iwasawa,
Kenya Shimada,
Kaili Jiang,
Pu Yu,
Jia Li,
Shuyun Zhou
Abstract:
Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band structure, large doping and strong electron-phonon coupling. Here we report the growth of monolayer graphene with high crystalline quality on Pt(111) substrate…
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Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band structure, large doping and strong electron-phonon coupling. Here we report the growth of monolayer graphene with high crystalline quality on Pt(111) substrate by using a very low concentration of an internal carbon source with high annealing temperature. The controlled growth leads to electronically decoupled graphene: it is nearly charge neutral and has extremely weak electron-phonon coupling (coupling strength $λ$ $\approx$ 0.056) as revealed by angle-resolved photoemission spectroscopic measurements. The thermodynamics and kinetics of the carbon diffusion process is investigated by DFT calculation. Such graphene with negligible graphene-substrate interaction provides an important platform for fundamental research as well as device applications when combined with a nondestructive sample transfer technique.
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Submitted 22 October, 2015;
originally announced October 2015.
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Fermi surfaces and orbital polarization in superconducting CeO$_{0.5}$F$_{0.5}$BiS$_{2}$ revealed by angle-resolved photoemission spectroscopy
Authors:
T. Sugimoto,
D. Ootsuki,
C. Morice,
E. Artacho,
S. S. Saxena,
E. F. Schwier,
M. Zheng,
Y. Kojima,
H. Iwasawa,
K. Shimada,
M. Arita,
H. Namatame,
M. Taniguchi,
M. Takahashi,
N. L. Saini,
T. Asano,
T. Nakajima,
R. Higashinaka,
T. D. Matsuda,
Y. Aoki,
T. Mizokawa
Abstract:
We have investigated the electronic structure of BiS$_2$-based CeO$_{0.5}$F$_{0.5}$BiS$_2$ superconductor using polarization-dependent angle-resolved photoemission spectroscopy (ARPES), and succeeded in elucidating the orbital characters on the Fermi surfaces. In the rectangular Fermi pockets around X point, the straight portion parallel to the $k_y$ direction is dominated by Bi $6p_x$ character.…
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We have investigated the electronic structure of BiS$_2$-based CeO$_{0.5}$F$_{0.5}$BiS$_2$ superconductor using polarization-dependent angle-resolved photoemission spectroscopy (ARPES), and succeeded in elucidating the orbital characters on the Fermi surfaces. In the rectangular Fermi pockets around X point, the straight portion parallel to the $k_y$ direction is dominated by Bi $6p_x$ character. The orbital polarization indicates the underlying quasi-one-dimensional electronic structure of the BiS$_2$ system. Moreover, distortions on tetragonally aligned Bi could give rise to the band Jahn-Teller effect.
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Submitted 1 July, 2015; v1 submitted 8 May, 2015;
originally announced May 2015.
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Experimental verification of the surface termination in the topological insulator TlBiSe$_{2}$ using core-level photoelectron spectroscopy and scanning tunneling microscopy
Authors:
Kenta Kuroda,
Mao Ye,
Eike F. Schwier,
Munisa Nurmamat,
Kaito Shirai,
Masashi Nakatake,
Shigenori Ueda,
Koji Miyamoto,
Taichi Okuda,
Hirofumi Namatame,
Masaki Taniguchi,
Yoshifumi Ueda,
Akio Kimura
Abstract:
The surface termination of the promising topological insulator TlBiSe$_{2}$ has been studied by surface and bulk sensitive probes. Our scanning tunneling microscopy has unmasked for the first time the unusual surface morphology of TlBiSe$_{2}$ obtained by cleaving, where islands are formed by residual atoms on the cleaved plane. The chemical condition of these islands was identified using core-lev…
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The surface termination of the promising topological insulator TlBiSe$_{2}$ has been studied by surface and bulk sensitive probes. Our scanning tunneling microscopy has unmasked for the first time the unusual surface morphology of TlBiSe$_{2}$ obtained by cleaving, where islands are formed by residual atoms on the cleaved plane. The chemical condition of these islands was identified using core-level spectroscopy. We observed thallium core-level spectra that are strongly deformed by a surface component in sharp contrast to the other elements. We propose a simple explanation for this behavior by assuming that the sample cleaving breaks the bonding between thallium and selenium atoms, leaving the thallium layer partially covering the selenium layer. These findings will assist the interpretation of future experimental and theoretical studies on this surface.
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Submitted 25 July, 2013;
originally announced July 2013.
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Unusual temperature dependence of the spectral weight near the Fermi level of NdNiO3 thin films
Authors:
E. F. Schwier,
R. Scherwitzl,
Z. Vydrova,
M.,
Garcia-Fernandez,
M. Gibert,
P. Zubko,
M. G. Garnier,
J. -M. Triscone,
P. Aebi
Abstract:
We investigate the behavior of the spectral weight near the Fermi level of NdNiO3 thin films as a function of temperature across the metal-to-insulator transition (MIT) by means of ultraviolet photoelectron spectroscopy. The spectral weight was found to exhibit thermal hysteresis, similar to that of the dc conductivity. A detailed analysis of the temperature dependence reveals two distinct regimes…
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We investigate the behavior of the spectral weight near the Fermi level of NdNiO3 thin films as a function of temperature across the metal-to-insulator transition (MIT) by means of ultraviolet photoelectron spectroscopy. The spectral weight was found to exhibit thermal hysteresis, similar to that of the dc conductivity. A detailed analysis of the temperature dependence reveals two distinct regimes of spectral loss close to the Fermi level. The temperature evolution of one regime is found to be independent from the MIT.
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Submitted 20 November, 2012;
originally announced November 2012.
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Scanning tunneling microscopy at multiple voltage biases of stable "ring-like" Ag clusters on Si(111)-(7$\times$7)
Authors:
Nicolas Mariotti,
Clément Didiot,
Eike F Schwier,
Claude Monney,
Laure-Emmanuelle Perret-Aebi,
Corsin Battaglia,
Michael G Garnier,
Philipp Aebi
Abstract:
Since more than twenty years it is known that deposition of Ag onto Si(111)-(7\times7) leads under certain conditions to the formation of so-called "ring-like" clusters, that are particularly stable among small clusters. In order to resolve their still unknown atomic structure, we performed voltage dependent scanning tunneling microscopy (STM) measurements providing interesting information about t…
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Since more than twenty years it is known that deposition of Ag onto Si(111)-(7\times7) leads under certain conditions to the formation of so-called "ring-like" clusters, that are particularly stable among small clusters. In order to resolve their still unknown atomic structure, we performed voltage dependent scanning tunneling microscopy (STM) measurements providing interesting information about the electronic properties of clusters which are linked with their atomic structure. Based on a structural model of Au cluster on Si(111)-(7\times7) and our STM images, we propose an atomic arrangement for the two most stable Ag "ring-like" clusters.
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Submitted 1 May, 2012;
originally announced May 2012.
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Influence of elastic scattering on the measurement of core-level binding energy dispersion in x-ray photoemission spectroscopy
Authors:
E. F. Schwier,
C. Monney,
N. Mariotti,
Z. Vydrovà,
M. García-Fernández,
C. Didiot,
M. G. Garnier,
P. Aebi
Abstract:
In the light of recent measurements of the C 1s core level dispersion in graphene [Nat. Phys. 6, 345 (2010)], we explore the interplay between the elastic scattering of photoelectrons and the surface core level shifts with regard to the determination of core level binding energies in Au(111) and Cu3Au(100). We find that an artificial shift is created in the binding energies of the Au 4f core level…
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In the light of recent measurements of the C 1s core level dispersion in graphene [Nat. Phys. 6, 345 (2010)], we explore the interplay between the elastic scattering of photoelectrons and the surface core level shifts with regard to the determination of core level binding energies in Au(111) and Cu3Au(100). We find that an artificial shift is created in the binding energies of the Au 4f core levels, that exhibits a dependence on the emission angle, as well as on the spectral intensity of the core level emission itself. Using a simple model, we are able to reproduce the angular dependence of the shift and relate it to the anisotropy in the electron emission from the bulk layers. Our results demonstrate that interpretation of variation of the binding energy of core-levels should be conducted with great care and must take into account the possible influence of artificial shifts induced by elastic scattering.
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Submitted 27 October, 2010;
originally announced October 2010.
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Dramatic effective mass reduction driven by strong electronic correlations
Authors:
C. Monney,
E. F. Schwier,
M. G. Garnier,
C. Battaglia,
N. Mariotti,
C. Didiot,
H. Cercellier,
J. Marcus,
H. Berger,
A. N. Titov,
H. Beck,
P. Aebi
Abstract:
We present angle-resolved photoemission experiments on 1T-TiSe2 at temperatures ranging from 13K to 288K. The data evidence a dramatic renormalization of the conduction band below 100K, whose origin can be explained with the exciton condensate phase model. The renormalization translates into a substantial effective mass reduction of the dominant charge carriers and can be directly related to the…
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We present angle-resolved photoemission experiments on 1T-TiSe2 at temperatures ranging from 13K to 288K. The data evidence a dramatic renormalization of the conduction band below 100K, whose origin can be explained with the exciton condensate phase model. The renormalization translates into a substantial effective mass reduction of the dominant charge carriers and can be directly related to the low temperature downturn of the resistivity of 1T-TiSe2. This observation is in opposition to the common belief that strong interactions produce heavier quasiparticles through an increased effective mass.
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Submitted 29 December, 2009;
originally announced December 2009.
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Temperature dependent photoemission on 1T-TiSe2: Interpretation within the exciton condensate phase model
Authors:
C. Monney,
E. F. Schwier,
C. Battaglia,
M. G. Garnier,
N. Mariotti,
C. Didiot,
H. Beck,
P. Aebi,
H. Cercellier,
J. Marcus,
H. Berger,
A. N. Titov
Abstract:
The charge density wave phase transition of 1T-TiSe2 is studied by angle-resolved photoemission over a wide temperature range. An important chemical potential shift which strongly evolves with temperature is evidenced. In the framework of the exciton condensate phase, the detailed temperature dependence of the associated order parameter is extracted. Having a mean-field-like behaviour at low tem…
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The charge density wave phase transition of 1T-TiSe2 is studied by angle-resolved photoemission over a wide temperature range. An important chemical potential shift which strongly evolves with temperature is evidenced. In the framework of the exciton condensate phase, the detailed temperature dependence of the associated order parameter is extracted. Having a mean-field-like behaviour at low temperature, it exhibits a non-zero value above the transition, interpreted as the signature of strong excitonic fluctuations, reminiscent of the pseudo-gap phase of high temperature superconductors. Integrated intensity around the Fermi level is found to display a trend similar to the measured resistivity and is discussed within the model.
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Submitted 2 November, 2009;
originally announced November 2009.
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Atomically precise Si(331)-(12x1) surfaces
Authors:
Corsin Battaglia,
Claude Monney,
Clement Didiot,
Eike Fabian Schwier,
Nicolas Mariotti,
Michael Gunnar Garnier,
Philipp Aebi
Abstract:
Si(331)-(12x1) is the only confirmed planar silicon surface with a stable reconstruction located between (111) and (110). We have optimized the annealing sequence and are able to obtain almost defect free, atomically precise surface areas approaching micrometer dimensions. The unprecedented perfection of the surface combined with its pronounced structural anisotropy makes it a promising candidat…
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Si(331)-(12x1) is the only confirmed planar silicon surface with a stable reconstruction located between (111) and (110). We have optimized the annealing sequence and are able to obtain almost defect free, atomically precise surface areas approaching micrometer dimensions. The unprecedented perfection of the surface combined with its pronounced structural anisotropy makes it a promising candidate to serve as template for the growth of self-assembled one-dimensional nanostructure arrays.
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Submitted 29 September, 2008;
originally announced September 2008.
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Elementary structural building blocks encountered in silicon surface reconstructions
Authors:
Corsin Battaglia,
Katalin Gaal-Nagy,
Claude Monney,
Clement Didiot,
Eike Fabian Schwier,
Michael Gunnar Garnier,
Giovanni Onida,
Philipp Aebi
Abstract:
Driven by the reduction of dangling bonds and the minimization of surface stress, reconstruction of silicon surfaces leads to a striking diversity of outcomes. Despite this variety even very elaborate structures are generally comprised of a small number of structural building blocks. We here identify important elementary building blocks and discuss their integration into the structural models as…
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Driven by the reduction of dangling bonds and the minimization of surface stress, reconstruction of silicon surfaces leads to a striking diversity of outcomes. Despite this variety even very elaborate structures are generally comprised of a small number of structural building blocks. We here identify important elementary building blocks and discuss their integration into the structural models as well as their impact on the electronic structure of the surface.
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Submitted 29 September, 2008;
originally announced September 2008.
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Temperature dependence of the excitonic insulator phase model in 1T-TiSe2
Authors:
C. Monney,
H. Cercellier,
F. Clerc,
C. Battaglia,
E. F. Schwier,
C. Didiot,
M. G. Garnier,
H. Beck,
P. Aebi
Abstract:
Recently, detailed calculations of the excitonic insulator phase model adapted to the case of 1\textit{T}-TiSe$_2$ have been presented. Through the spectral function theoretical photoemission intensity maps can be generated which are in very good agreement with experiment [Phys. Rev. Lett. {\bf 99}, (2007) 146403]. In this model, excitons condensate in a BCS-like manner and give rise to a charge…
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Recently, detailed calculations of the excitonic insulator phase model adapted to the case of 1\textit{T}-TiSe$_2$ have been presented. Through the spectral function theoretical photoemission intensity maps can be generated which are in very good agreement with experiment [Phys. Rev. Lett. {\bf 99}, (2007) 146403]. In this model, excitons condensate in a BCS-like manner and give rise to a charge density wave, characterized by an order parameter. Here, we assume an analytical form of the order parameter, allowing to perform temperature dependent calculations. The influence of this order parameter on the electronic spectral function, to be observed in photoemission spectra, is discussed. The resulting chemical potential shift and an estimation of the resistivity are also shown.
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Submitted 11 September, 2008;
originally announced September 2008.
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Spontaneous exciton condensation in 1T-TiSe2: a BCS-like approach
Authors:
C. Monney,
H. Cercellier,
F. Clerc,
C. Battaglia,
E. F. Schwier,
C. Didiot,
M. G. Garnier,
H. Beck,
H. Berger,
L. Forró,
L. Patthey,
P. Aebi
Abstract:
Recently strong evidence has been found in favor of a BCS-like condensation of excitons in 1\textit{T}-TiSe$_2$. Theoretical photoemission intensity maps have been generated by the spectral function calculated within the excitonic condensate phase model and set against experimental angle-resolved photoemission spectroscopy data. Here, the calculations in the framework of this model are presented…
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Recently strong evidence has been found in favor of a BCS-like condensation of excitons in 1\textit{T}-TiSe$_2$. Theoretical photoemission intensity maps have been generated by the spectral function calculated within the excitonic condensate phase model and set against experimental angle-resolved photoemission spectroscopy data. Here, the calculations in the framework of this model are presented in detail. They represent an extension of the original excitonic insulator phase model of Jérome \textit{et al.} [Phys. Rev. {\bf 158}, 462 (1967)] to three dimensional and anisotropic band dispersions. A detailed analysis of its properties and further comparison with experiment are also discussed
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Submitted 11 September, 2008;
originally announced September 2008.
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A new structural model for the Si(331)-(12x1) reconstruction
Authors:
Corsin Battaglia,
Katalin Gaal-Nagy,
Claude Monney,
Clement Didiot,
Eike Fabian Schwier,
Michael Gunnar Garnier,
Giovanni Onida,
Philipp Aebi
Abstract:
A new structural model for the Si(331)-(12x1) reconstruction is proposed. Based on scanning tunneling microscopy images of unprecedented resolution, low-energy electron diffraction data, and first-principles total-energy calculations, we demonstrate that the reconstructed Si(331) surface shares the same elementary building blocks as the Si(110)-(16x2) surface, establishing the pentamer as a univ…
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A new structural model for the Si(331)-(12x1) reconstruction is proposed. Based on scanning tunneling microscopy images of unprecedented resolution, low-energy electron diffraction data, and first-principles total-energy calculations, we demonstrate that the reconstructed Si(331) surface shares the same elementary building blocks as the Si(110)-(16x2) surface, establishing the pentamer as a universal building block for complex silicon surface reconstructions.
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Submitted 24 July, 2008;
originally announced July 2008.