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Effect of substrate and thickness on spin-wave propagation properties in ferrimagnetic thulium iron garnet thin films
Authors:
Rupak Timalsina,
Bharat Giri,
Haohan Wang,
Adam Erickson,
Suchit Sarin,
Suvechhya Lamichhane,
Sy-Hwang Liou,
Jeffery E. Shield,
Xiaoshan Xu,
Abdelghani Laraoui
Abstract:
Rare-earth iron garnets have distinctive spin-wave (SW) properties such as low magnetic damping and long SW coherence length making them ideal candidates for magnonics. Among them, thulium iron garnet (TmIG) is a ferrimagnetic insulator with unique magnetic properties including perpendicular magnetic anisotropy (PMA) and topological hall effect at room temperature when grown down to a few nanomete…
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Rare-earth iron garnets have distinctive spin-wave (SW) properties such as low magnetic damping and long SW coherence length making them ideal candidates for magnonics. Among them, thulium iron garnet (TmIG) is a ferrimagnetic insulator with unique magnetic properties including perpendicular magnetic anisotropy (PMA) and topological hall effect at room temperature when grown down to a few nanometers, extending its application to magnon spintronics. Here, the SW propagation properties of TmIG films (thickness of 7 - 34 nm) grown on GGG and sGGG substrates are studied at room temperature. Magnetic measurements show in-plane magnetic anisotropy for TmIG films grown on GGG and out-of-plane magnetic anisotropy for films grown on sGGG substrates with PMA. SW electrical transmission spectroscopy measurements on TmIG /GGG films unveil magnetostatic surface spin waves (MSSWs) propagating up to 80 um with a SW group velocity of 3 - 8 km/s. Intriguingly, these MSSWs exhibit nonreciprocal propagation, opening new applications in SW functional devices. TmIG films grown on sGGG substrates exhibit forward volume spin waves with a reciprocal propagation behavior up to 32 um.
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Submitted 17 May, 2024;
originally announced May 2024.
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Unraveling the formation dynamics of metallic femtosecond laser induced periodic surface structures
Authors:
L. Khosravi Khorashad,
A. Reicks,
A. Erickson,
J. E. Shield,
D. Alexander,
A. Laraoui,
G. Gogos,
C. Zuhlke,
C. Argyropoulos
Abstract:
Femtosecond laser surface processing (FLSP) is an emerging fabrication technique to efficiently control the surface morphology of many types of materials including metals. However, the theoretical understanding of the FLSP formation dynamics is not a trivial task, since it involves the interaction of various physical processes (electromagnetic, thermal, fluid dynamics) and remains relatively unexp…
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Femtosecond laser surface processing (FLSP) is an emerging fabrication technique to efficiently control the surface morphology of many types of materials including metals. However, the theoretical understanding of the FLSP formation dynamics is not a trivial task, since it involves the interaction of various physical processes (electromagnetic, thermal, fluid dynamics) and remains relatively unexplored. In this work, we tackle this problem and present rigorous theoretical results relevant to low-fluence FLSP that accurately match the outcomes of an experimental campaign focused on the formation dynamics of laser induced periodic surface structures (LIPSS) on stainless steel. More specifically, the topology and maximum depth of LIPSS trenches are theoretically and experimentally investigated as a function of the number of laser pulses. Moreover, precise LIPSS morphology measurements are performed using atomic force microscopy (AFM). The proposed comprehensive simulation study is based on two-temperature model (TTM) non-equilibrium thermal simulations coupled with fluid dynamic computations to capture the melting metal phase occurring during FLSP. Our rigorous simulation results are found to be in excellent agreement with the AFM measurements. The presented theoretical framework to model FLSP under low-fluence femtosecond laser pulses will be beneficial to various emerging applications of LIPSS on metallic surfaces, such as cooling high-powered laser diodes and controlling the thermal emission or absorption of metals.
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Submitted 22 November, 2023; v1 submitted 29 August, 2023;
originally announced August 2023.
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Physical Vapor Transport Growth of Antiferromagnetic CrCl$_3$ Flakes Down to Monolayer Thickness
Authors:
Jia Wang,
Zahra Ahmadi,
David Lujan,
Jeongheon Choe,
Takashi Taniguchi,
Kenji Watanabe,
Xiaoqin Li,
Jeffrey E. Shield,
Xia Hong
Abstract:
The van der Waals magnets CrX$_3$ (X = I, Br, and Cl) exhibit highly tunable magnetic properties and are promising candidates for developing novel two-dimensional (2D) magnetic devices such as magnetic tunnel junctions and spin tunneling transistors. Previous studies of CrCl$_3$ have mainly focused on mechanically exfoliated samples. Controlled synthesis of high quality atomically thin flakes is c…
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The van der Waals magnets CrX$_3$ (X = I, Br, and Cl) exhibit highly tunable magnetic properties and are promising candidates for developing novel two-dimensional (2D) magnetic devices such as magnetic tunnel junctions and spin tunneling transistors. Previous studies of CrCl$_3$ have mainly focused on mechanically exfoliated samples. Controlled synthesis of high quality atomically thin flakes is critical for their technological implementation but has not been achieved to date. Here, we report the growth of large CrCl$_3$ flakes with well-defined facets down to monolayer thickness (~0.6 nm) via the physical vapor transport technique. Both isolated flakes with well-defined facets and long stripe samples with the trilayer portion exceeding 60 $μ$m have been obtained. High-resolution transmission electron microscopy studies show that the CrCl$_3$ flakes are single crystalline in the monoclinic structure, consistent with the Raman results. The room temperature stability of the CrCl$_3$ flakes decreases with decreasing thickness. The tunneling magnetoresistance of graphite/CrCl$_3$/graphite tunnel junctions confirms that few-layer CrCl$_3$ possesses in-plane magnetic anisotropy and Néel temperature of 17 K. Our study paves the path for developing CrCl$_3$-based scalable 2D spintronic applications.
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Submitted 4 December, 2022; v1 submitted 12 August, 2022;
originally announced August 2022.
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Intrinsic ferroelectricity in Y-doped HfO2 thin films
Authors:
Yu Yun,
Pratyush Buragohain,
Ming Li,
Zahra Ahmadi,
Yizhi Zhang,
Xin Li,
Haohan Wang,
Lingling Tao,
Haiyan Wang,
Jeffrey E. Shield,
Evgeny Y. Tsymbal,
Alexei Gruverman,
Xiaoshan Xu
Abstract:
Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the nanoscale and compatibility with the existing Si technology. Earlier work indicated that the nanometer crystal grain size was crucial for stabilization of the ferroelectric phase of hafnia. This constraint caused high den…
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Ferroelectric HfO2-based materials hold great potential for widespread integration of ferroelectricity into modern electronics due to their robust ferroelectric properties at the nanoscale and compatibility with the existing Si technology. Earlier work indicated that the nanometer crystal grain size was crucial for stabilization of the ferroelectric phase of hafnia. This constraint caused high density of unavoidable structural defects of the HfO2-based ferroelectrics, obscuring the intrinsic ferroelectricity inherited from the crystal space group of bulk HfO2. Here, we demonstrate the intrinsic ferroelectricity in Y-doped HfO2 films of high crystallinity. Contrary to the common expectation, we show that in the 5% Y-doped HfO2 epitaxial thin films, high crystallinity enhances the spontaneous polarization up to a record-high 50 μC/cm2 value at room temperature. The high spontaneous polarization persists at reduced temperature, with polarization values consistent with our theoretical predictions, indicating the dominant contribution from the intrinsic ferroelectricity. The crystal structure of these films reveals the Pca21 orthorhombic phase with a small rhombohedral distortion, underlining the role of the anisotropic stress and strain. These results open a pathway to controlling the intrinsic ferroelectricity in the HfO2-based materials and optimizing their performance in applications.
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Submitted 10 September, 2021;
originally announced September 2021.
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Near-unity broadband omnidirectional emissivity via femtosecond laser surface processing
Authors:
Andrew Reicks,
Alfred Tsubaki,
Mark Anderson,
Jace Wieseler,
Larousse Khosravi Khorashad,
Jeffrey E. Shield,
George Gogos,
Dennis Alexander,
Christos Argyropoulos,
Craig Zuhlke
Abstract:
It is very challenging to achieve near perfect absorption/emission that is both broadband and omnidirectional while utilizing a scalable fabrication process. Femtosecond laser surface processing is an emerging low-cost and large-scale manufacturing technique used to directly and permanently modify the surface properties of a material. The versatility of this technique to produce tailored surface p…
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It is very challenging to achieve near perfect absorption/emission that is both broadband and omnidirectional while utilizing a scalable fabrication process. Femtosecond laser surface processing is an emerging low-cost and large-scale manufacturing technique used to directly and permanently modify the surface properties of a material. The versatility of this technique to produce tailored surface properties has resulted in a rapidly growing number of applications. Here, we demonstrate near perfect, broadband, omnidirectional emissivity from aluminum surfaces by tuning the laser surface processing parameters including fluence, pulse count, and the ambient gas. Full-wave simulations and experimental results prove that the obtained increase in emissivity is mainly a result of two distinct features produced by femtosecond laser surface processing: the introduction of microscale surface features and the thick oxide layer. This technique leads to functionalized metallic surfaces that are ideal for emerging applications, such as passive radiative cooling and thermal management of spacecraft.
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Submitted 19 February, 2021; v1 submitted 8 December, 2020;
originally announced December 2020.
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Effect of Strain on Ferroelectric Field Effect in Strongly Correlated Oxide Sm$_{0.5}$Nd$_{0.5}$NiO$_3$
Authors:
L. Zhang,
X. G. Chen,
H. J. Gardner,
M. A. Koten,
J. E. Shield,
X. Hong
Abstract:
We report the effect of epitaxial strain on the magnitude and retention of the ferroelectric field effect in high quality PbZr$_{0.3}$Ti$_{0.7}$O$_3$ (PZT)/3.8-4.3 nm Sm$_{0.5}$Nd$_{0.5}$NiO$_3$ (SNNO) heterostructures grown on (001) LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) substrates. For SNNO on LAO, which exhibits a first-order metal-insulator transition (MIT), switching the polarization of PZT indu…
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We report the effect of epitaxial strain on the magnitude and retention of the ferroelectric field effect in high quality PbZr$_{0.3}$Ti$_{0.7}$O$_3$ (PZT)/3.8-4.3 nm Sm$_{0.5}$Nd$_{0.5}$NiO$_3$ (SNNO) heterostructures grown on (001) LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) substrates. For SNNO on LAO, which exhibits a first-order metal-insulator transition (MIT), switching the polarization of PZT induces a 10 K shift in the transition temperature $T_{MI}$, with a maximum resistance change between the on and off states of $Δ$$R$/$R_{on}$ ~75%. In sharp contrast, only up to 5% resistance change has been induced in SNNO on STO, where the MIT is second-order, with the modulation of $T_{MI}$ negligibly small. We also observe thermally activated retention of the off state resistance $R_{off}$ in both systems, with the activation energy of 22 meV (28 meV) for devices on LAO (STO). The time dynamics and thermal response of the field effect instability points to phonon-assisted interfacical trapping of charged mobile defects, which are attributed to strain induced oxygen vacancies. At room temperature, $R_{off}$ stabilizes at ~55% and ~19% of the initial switching levels for SNNO on LAO and STO, respectively, reflecting the significantly different oxygen vacancy densities in these two systems. Our results reveal the critical role of strain in engineering and modeling the complex oxide composite structures for nanoelectronic and spintronic applications.
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Submitted 27 October, 2015; v1 submitted 17 September, 2015;
originally announced September 2015.
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Structural and magnetic properties of Pr-alloyed MnBi nanostructures
Authors:
P. Kharel,
V. R. Shah,
X. Z. Li,
W. Y. Zhang,
R. Skomski,
J. E. Shield,
D. J. Sellmyer
Abstract:
The structural and magnetic properties of Pr-alloyed MnBi (short MnBi-Pr) nanostructures with a range of Pr concentrations have been investigated. The nanostructures include thin films having Pr concentrations 0, 2, 3, 5 and 9 atomic percent and melt-spun ribbons having Pr concentrations 0, 2, 4 and 6 percent respectively. Addition of Pr into the MnBi lattice has produced a significant change in t…
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The structural and magnetic properties of Pr-alloyed MnBi (short MnBi-Pr) nanostructures with a range of Pr concentrations have been investigated. The nanostructures include thin films having Pr concentrations 0, 2, 3, 5 and 9 atomic percent and melt-spun ribbons having Pr concentrations 0, 2, 4 and 6 percent respectively. Addition of Pr into the MnBi lattice has produced a significant change in the magnetic properties of these nanostructures including an increase in coercivity and structural phase transition temperature, and a decrease in saturation magnetization and anisotropy energy. The highest value of coercivity measured in the films is 23 kOe and in the ribbons is 5.6 kOe. The observed magnetic properties are explained as the consequences of competing ferromagnetic and antiferromagnetic interactions.
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Submitted 28 January, 2013;
originally announced January 2013.
