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Hardware Realization of Neuromorphic Computing with a 4-Port Photonic Reservoir for Modulation Format Identification
Authors:
Enes Şeker,
Rijil Thomas,
Guillermo von Hünefeld,
Stephan Suckow,
Mahdi Kaveh,
Gregor Ronniger,
Pooyan Safari,
Isaac Sackey,
David Stahl,
Colja Schubert,
Johannes Karl Fischer,
Ronald Freund,
Max C. Lemme
Abstract:
The fields of machine learning and artificial intelligence drive researchers to explore energy-efficient, brain-inspired new hardware. Reservoir computing encompasses recurrent neural networks for sequential data processing and matches the performance of other recurrent networks with less training and lower costs. However, traditional software-based neural networks suffer from high energy consumpt…
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The fields of machine learning and artificial intelligence drive researchers to explore energy-efficient, brain-inspired new hardware. Reservoir computing encompasses recurrent neural networks for sequential data processing and matches the performance of other recurrent networks with less training and lower costs. However, traditional software-based neural networks suffer from high energy consumption due to computational demands and massive data transfer needs. Photonic reservoir computing overcomes this challenge with energy-efficient neuromorphic photonic integrated circuits or NeuroPICs. Here, we introduce a reservoir NeuroPIC used for modulation format identification in C-band telecommunication network monitoring. It is built on a silicon-on-insulator platform with a 4-port reservoir architecture consisting of a set of physical nodes connected via delay lines. We comprehensively describe the NeuroPIC design and fabrication, experimentally demonstrate its performance, and compare it with simulations. The NeuroPIC incorporates non-linearity through a simple digital readout and achieves close to 100% accuracy in identifying several configurations of quadrature amplitude modulation formats transmitted over 20 km of optical fiber at 32 GBaud symbol rate. The NeuroPIC performance is robust against fabrication imperfections like waveguide propagation loss, phase randomization, etc. and delay line length variations. Furthermore, the experimental results exceeded numerical simulations, which we attribute to enhanced signal interference in the experimental NeuroPIC output. Our energy-efficient photonic approach has the potential for high-speed temporal data processing in a variety of applications.
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Submitted 19 June, 2024;
originally announced June 2024.
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Bimodal Plasmonic Refractive Index Sensors Based on SU-8 Waveguides
Authors:
Omkar Bhalerao,
Stephan Suckow,
Horst Windgassen,
Harry Biller,
Konstantinos Fotiadis,
Stelios Simos,
Evangelia Chatzianagnostou,
Dimosthenis Spasopoulos,
Pratyusha Das,
Laurent Markey,
Jean-Claude Weeber,
Nikos Pleros,
Matthias Schirmer,
Max C. Lemme
Abstract:
Plasmonic refractive index sensors are essential for detecting subtle variations in the ambient environment through surface plasmon interactions. Current efforts utilizing CMOS-compatible, plasmo-photonic Mach-Zehnder interferometers with active power balancing exhibit high sensitivities at the cost of fabrication and measurement complexity. Alternatively, passive bimodal plasmonic interferometers…
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Plasmonic refractive index sensors are essential for detecting subtle variations in the ambient environment through surface plasmon interactions. Current efforts utilizing CMOS-compatible, plasmo-photonic Mach-Zehnder interferometers with active power balancing exhibit high sensitivities at the cost of fabrication and measurement complexity. Alternatively, passive bimodal plasmonic interferometers based on SU-8 waveguides present a cost-effective solution with a smaller device footprint, though they currently lack opto-mechanical isolation due to exposed photonic waveguides. In this work, we introduce innovative polymer-core and polymer-cladded bimodal plasmonic refractive index sensors with high refractive index contrast. Our sensors feature an aluminum stripe, a bilayer SU-8 photonic waveguide core, and the experimental optical cladding polymer SX AR LWL 2.0. They achieve a sensitivity of (6300 $\pm$ 460) nm/RIU (refractive index unit), surpassing both traditional and polymer-based plasmo-photonic sensors. This approach enables integrated, wafer-scale, CMOS-compatible, and low-cost sensors and facilitates plasmonic refractive index sensing platforms for various applications.
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Submitted 9 May, 2024;
originally announced May 2024.
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Graphene thermal infrared emitters integrated into silicon photonic waveguides
Authors:
Nour Negm,
Sarah Zayouna,
Shayan Parhizkar,
Pen-Sheng Lin,
Po-Han Huang,
Stephan Suckow,
Stephan Schroeder,
Eleonora De Luca,
Floria Ottonello Briano,
Arne Quellmalz,
Georg S. Duesberg,
Frank Niklaus,
Kristinn B. Gylfason,
Max C. Lemme
Abstract:
Cost-efficient and easily integrable broadband mid-infrared (mid-IR) sources would significantly enhance the application space of photonic integrated circuits (PICs). Thermal incandescent sources are superior to other common mid-IR emitters based on semiconductor materials in terms of PIC compatibility, manufacturing costs, and bandwidth. Ideal thermal emitters would radiate directly into the desi…
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Cost-efficient and easily integrable broadband mid-infrared (mid-IR) sources would significantly enhance the application space of photonic integrated circuits (PICs). Thermal incandescent sources are superior to other common mid-IR emitters based on semiconductor materials in terms of PIC compatibility, manufacturing costs, and bandwidth. Ideal thermal emitters would radiate directly into the desired modes of the PIC waveguides via near-field coupling and would be stable at very high temperatures. Graphene is a semi-metallic two-dimensional material with comparable emissivity to thin metallic thermal emitters. It allows maximum coupling into waveguides by placing it directly into their evanescent fields. Here, we demonstrate graphene mid-IR emitters integrated with photonic waveguides that couple directly into the fundamental mode of silicon waveguides designed for a wavelength of 4,2 μm relevant for CO${_2}$ sensing. High broadband emission intensity is observed at the waveguide-integrated graphene emitter. The emission at the output grating couplers confirms successful coupling into the waveguide mode. Thermal simulations predict emitter temperatures up to 1000°C, where the blackbody radiation covers the mid-IR region. A coupling efficiency η, defined as the light emitted into the waveguide divided by the total emission, of up to 68% is estimated, superior to data published for other waveguide-integrated emitters.
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Submitted 8 August, 2023;
originally announced August 2023.
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Two-dimensional Platinum Diselenide Waveguide-Integrated Infrared Photodetectors
Authors:
Shayan Parhizkar,
Maximilian Prechtl,
Anna Lena Giesecke,
Stephan Suckow,
Sophia Wahl,
Sebastian Lukas,
Oliver Hartwig,
Nour Negm,
Arne Quellmalz,
Kristinn B. Gylfason,
Daniel Schall,
Matthias Wuttig,
Georg S. Duesberg,
Max C. Lemme
Abstract:
Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 $μ$m. Multilayered platinum diselenide (PtSe$_2$) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450$°$C. We integrate PtSe$_2$ based PDs directly by conformal growth on Si waveguides. The PD…
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Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 $μ$m. Multilayered platinum diselenide (PtSe$_2$) is a semi-metallic two-dimensional (2D) material that can be synthesized below 450$°$C. We integrate PtSe$_2$ based PDs directly by conformal growth on Si waveguides. The PDs operate at 1550 nm wavelength with a maximum responsivity of 11 mA/W and response times below 8.4 $μ$s. Fourier transform infrared spectroscopy (FTIR) in the wavelength range from 1.25 $μ$m to 28 $μ$m indicates the suitability of PtSe$_2$ for PDs far into the infrared wavelength range. Our PtSe$_2$ PDs integrated by direct growth outperform PtSe$_2$ PDs manufactured by standard 2D layer transfer. The combination of IR responsivity, chemical stability, selective and conformal growth at low temperatures, and the potential for high carrier mobility, make PtSe$_2$ an attractive 2D material for optoelectronics and PICs.
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Submitted 21 March, 2022; v1 submitted 17 October, 2021;
originally announced October 2021.
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Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication
Authors:
Piotr J Cegielski,
Anna Lena Giesecke,
Stefanie Neutzner,
Caroline Porschatis,
Marina Gandini,
Daniel Schall,
Carlo AR Perini,
Jens Bolten,
Stephan Suckow,
Satender Kataria,
Bartos Chmielak,
Thorsten Wahlbrink,
Annamaria Petrozza,
Max C Lemme
Abstract:
Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through cost…
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Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through costly and inefficient hybrid integration of III-V semiconductors. Until now however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography and therefore on existing semiconductor manufacturing infrastructure has been established. Here, the first methylammonium lead iodide perovskite micro-disc lasers monolithically integrated into silicon nitride PICs by such a top-down process is presented. The lasers show a record low lasing threshold of 4.7 $μ$Jcm$^{-2}$ at room temperature for monolithically integrated lasers, which are CMOS compatible and can be integrated in the back-end-of-line (BEOL) processes.
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Submitted 18 July, 2019;
originally announced July 2019.
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High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions
Authors:
Sarah Riazimehr,
Satender Kataria,
Jose-Maria González-Medina,
Mehrdad Shaygan,
Stephan Suckow,
Francisco G. Ruiz,
Olof Engström,
Andres Godoy,
Max Christian Lemme
Abstract:
Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focus on efficiency and performance. Here, a specific contact pattern scheme with interdigitated Schottky and graphene/insulator/silicon (GIS) structures is explored to experimentally demonstrate highly sensitive G/Si photod…
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Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focus on efficiency and performance. Here, a specific contact pattern scheme with interdigitated Schottky and graphene/insulator/silicon (GIS) structures is explored to experimentally demonstrate highly sensitive G/Si photodiodes. With the proposed design, an external quantum efficiency (EQE) of > 80 % is achieved for wavelengths ranging from 380 to 930 nm. A maximum EQE of 98% is observed at 850 nm, where the responsivity peaks to 635 mA/W, surpassing conventional Si p-n photodiodes. This efficiency is attributed to the highly effective collection of charge carriers photogenerated in Si under the GIS parts of the diodes. The experimental data is supported by numerical simulations of the diodes. Based on these results, a definition for the true active area in G/Si photodiodes is proposed, which may serve towards standardization of G/Si based optoelectronic devices.
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Submitted 13 July, 2018;
originally announced July 2018.
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Integrated perovskite lasers on silicon nitride waveguide platform by cost-effective high throughput fabrication
Authors:
Piotr Jacek Cegielski,
Stefanie Neutzner,
Caroline Porschatis,
Holger Lerch,
Jens Bolten,
Stephan Suckow,
Ajay Ram Srimath Kandada,
Bartos Chmielak,
Annamaria Petrozza,
Thorsten Wahlbrink,
Anna Lena Giesecke
Abstract:
Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifetimes, which makes them promising for a wide range of efficient photonic devices. In this work, we demonstrate the first successful integration of a perovskite laser onto a silicon nitride photonic chip. High throughput, l…
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Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifetimes, which makes them promising for a wide range of efficient photonic devices. In this work, we demonstrate the first successful integration of a perovskite laser onto a silicon nitride photonic chip. High throughput, low cost optical lithography is used followed by indirect structuring of the perovskite waveguide. We embed methylammonium lead tri-iodide (MAPbI3) in a pre-patterned race-track microresonator and couple the emitted light to an integrated photonic waveguide. We clearly observe the build-up of spectrally narrow lasing modes at room temperature upon a pump threshold fluence of $19.6 μJcm^{-2}$. Our results evidence the possibility of on-chip lasers based on metal-halide perovskites with industry relevance on a commercially available dielectric photonic platform, which is a step forward towards low-cost integrated photonic devices.
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Submitted 4 July, 2017;
originally announced July 2017.
