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Orbital paramagnetism without density of states enhancement in nodal-line semimetal ZrSiS
Authors:
Soshun Ozaki,
Hiroyasu Matsuura,
Ikuma Tateishi,
Takashi Koretsune,
Masao Ogata
Abstract:
Unconventional orbital paramagnetism without enhancement of the density of states was recently discovered in the nodal-line semimetal ZrSiS. Here, we propose a novel interband mechanism of orbital paramagnetism associated with the negative curvature of energy dispersions, which successfully explains the observed anomalous orbital paramagnetism. This negative curvature arises from energy fluctuatio…
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Unconventional orbital paramagnetism without enhancement of the density of states was recently discovered in the nodal-line semimetal ZrSiS. Here, we propose a novel interband mechanism of orbital paramagnetism associated with the negative curvature of energy dispersions, which successfully explains the observed anomalous orbital paramagnetism. This negative curvature arises from energy fluctuations along the nodal line, inherent in realistic nodal-line materials. Our new mechanism indicates that such orbital paramagnetism serves as strong evidence for the existence of nodal lines not only in ZrSiS but potentially in various other nodal-line materials as well.
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Submitted 11 June, 2024;
originally announced June 2024.
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Ideal Spin-Orbit-Free Dirac Semimetal and Diverse Topological Transitions in Pr$_8$CoGa$_3$ Family
Authors:
Manabu Sato,
Juba Bouaziz,
Shuntaro Sumita,
Shingo Kobayashi,
Ikuma Tateishi,
Stefan Blügel,
Akira Furusaki,
Motoaki Hirayama
Abstract:
We propose from first-principles calculations that spin-orbit-free materials in the $RE_8\mathrm{Co}X_3$ group ($RE$ = rare earth elements, $X$ = Al, Ga, or In) are ideal spinless Dirac semimetals whose Fermi surfaces are fourfold degenerate band-crossing points (without including spin degeneracy). Despite the lack of space inversion symmetry in these materials, Dirac points are formed on the rota…
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We propose from first-principles calculations that spin-orbit-free materials in the $RE_8\mathrm{Co}X_3$ group ($RE$ = rare earth elements, $X$ = Al, Ga, or In) are ideal spinless Dirac semimetals whose Fermi surfaces are fourfold degenerate band-crossing points (without including spin degeneracy). Despite the lack of space inversion symmetry in these materials, Dirac points are formed on the rotation-symmetry axis due to accidental degeneracies of two bands corresponding to different 2-dimensional irreducible representations of $C_{6v}$ group. The surface states have two midgap bands emanating from the projection in the surface Brillouin zone of the bulk Dirac points, in accordance with nontrivial Zak phases for each glide sector. We also investigate, through first-principles calculations and effective model analysis, various phase transitions caused by lattice distortion or elemental substitutions from the Dirac semimetal phase to distinct topological semimetallic phases such as nonmagnetic linked-nodal-line and Weyl semimetals (characterized by the second Stiefel-Whitney class) and ferromagnetic Weyl semimetals.
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Submitted 24 January, 2024;
originally announced January 2024.
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Topological invariant and domain connectivity in moiré materials
Authors:
Ikuma Tateishi,
Motoaki Hirayama
Abstract:
Recently, a moiré material has been proposed in which multiple domains of different topological phases appear in the moiré unit cell due to a large moiré modulation. Topological properties of such moiré materials may differ from that of the original untwisted layered material. In this paper, we study how the topological properties are determined in moiré materials with multiple topological domains…
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Recently, a moiré material has been proposed in which multiple domains of different topological phases appear in the moiré unit cell due to a large moiré modulation. Topological properties of such moiré materials may differ from that of the original untwisted layered material. In this paper, we study how the topological properties are determined in moiré materials with multiple topological domains. We show a correspondence between the topological invariant of moiré materials at the Fermi level and the topology of the domain structure in real space. We also find a bulk-edge correspondence that is compatible with a continuous change of the truncation condition, which is specific to moiré materials. We demonstrate these correspondences in the twisted Bernevig-Hughes-Zhang model by tuning its moiré periodic mass term. These results give a feasible method to evaluate a topological invariant for all occupied bands of a moiré material, and contribute to the design of topological moiré materials and devices.
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Submitted 21 December, 2022;
originally announced December 2022.
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Electronic topological transition of 2D boron by the ion exchange reaction
Authors:
Xiaoni Zhang,
Yuki Tsujikawa,
Ikuma Tateishi,
Masahito Niibe,
Tetsuya Wada,
Masafumi Horio,
Miwa Hikichi,
Yasunobu Ando,
Kunio Yubuta,
Takahiro Kondo,
Iwao Matsuda
Abstract:
We systematically investigated electronic evolutions of non-symmorphic borophene with chemical environments that were realized by the ion exchange method. Electronic structures can be characterized by the topological $Z_2$ invariant. Spectroscopic experiments and DFT calculations unveiled that a sheet of hydrogenated borophene (borophane) is the Dirac nodal loop semimetal ($Z_2=-1$), while a layer…
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We systematically investigated electronic evolutions of non-symmorphic borophene with chemical environments that were realized by the ion exchange method. Electronic structures can be characterized by the topological $Z_2$ invariant. Spectroscopic experiments and DFT calculations unveiled that a sheet of hydrogenated borophene (borophane) is the Dirac nodal loop semimetal ($Z_2=-1$), while a layered crystal of YCrB$_4$ is an insulator ($Z_2=1$). The results demonstrate the electronic topological transition by replacement of the counter atoms on the non-symmorphic borophene layer.
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Submitted 11 May, 2022;
originally announced May 2022.
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Quantum spin Hall effect from multi-scale band inversion in twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$
Authors:
Ikuma Tateishi,
Motoaki Hirayama
Abstract:
Moiré materials have become one of the most active fields in material science in recent years due to their high tunability, and their unique properties emerge from the Moiré-scale structure modulation. Here, we propose twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$ as a new Moiré material where the Moiré-scale modulation induces a topological phase transition. We show, in twisted bilayer Bi$_2$(Te…
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Moiré materials have become one of the most active fields in material science in recent years due to their high tunability, and their unique properties emerge from the Moiré-scale structure modulation. Here, we propose twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$ as a new Moiré material where the Moiré-scale modulation induces a topological phase transition. We show, in twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$, a topological insulator domain and a normal insulator domain coexist in the Moiré lattice structure, and edge states on the domain boundary make nearly flat bands that dominate the material properties. The edge states further contribute to a Moiré-scale band inversion, resulting in Moiré-scale topological states. There are corresponding Moiré-scale edge states and they are so to speak "edge state from edge state", which is a unique feature of twisted bilayer Bi$_2$(Te$_{1-x}$Se$_x$)$_3$. Our result not only proposes novel quantum phases in twisted bilayer Bi$_2$Te$_3$-family, but also suggests the twisting of stacking sensitive topological materials paves an avenue in the search for novel quantum materials and devices.
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Submitted 16 March, 2022; v1 submitted 27 December, 2021;
originally announced December 2021.
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Thin Films of Topological Nodal Line Semimetals as a Candidate for Efficient Thermoelectric Converters
Authors:
Masashi Hosoi,
Ikuma Tateishi,
Hiroyasu Matsuura,
Masao Ogata
Abstract:
Thermoelectric materials intrigue much interest due to their wide range of application such as power generators and refrigerators. The efficiency of thermoelectric materials is quantified by the figure of merit, and a figure greater than unity is desired. To achieve this, a large Seebeck coefficient and low phonon thermal conductivity are required. We show that this can be achieved with a thin fil…
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Thermoelectric materials intrigue much interest due to their wide range of application such as power generators and refrigerators. The efficiency of thermoelectric materials is quantified by the figure of merit, and a figure greater than unity is desired. To achieve this, a large Seebeck coefficient and low phonon thermal conductivity are required. We show that this can be achieved with a thin film of topological nodal line semimetals. We also discusses the correlation effect and spin current induced by a temperature gradient. The obtained results provide insight for the improvement of thermoelectric materials.
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Submitted 16 July, 2021;
originally announced July 2021.
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Nodal-line semimetal HMTSF-TCNQ: Anomalous orbital diamagnetism and charge density wave
Authors:
S. Ozaki,
I. Tateishi,
H. Matsuura,
M. Ogata,
K. Hiraki
Abstract:
This study investigates the electronic states and physical quantities of an organic charge-transfer complex HMTSF-TCNQ, which undergoes a charge-density-wave (CDW) phase transition at temperature $T_c\simeq 30$ K. A first-principles calculation is utilized to determine that the normal state is a topological semimetal with open nodal lines. Besed on the first-principles calculation, we develop a ti…
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This study investigates the electronic states and physical quantities of an organic charge-transfer complex HMTSF-TCNQ, which undergoes a charge-density-wave (CDW) phase transition at temperature $T_c\simeq 30$ K. A first-principles calculation is utilized to determine that the normal state is a topological semimetal with open nodal lines. Besed on the first-principles calculation, we develop a tight-binding model to investigate the electronic state in detail. Below $T_c$, the CDW phase is examined in the tight-binding scheme using the mean-field approximation. It is shown that the open nodal lines are deformed into closed ones, and their shapes are sensitive to the order parameter. Using this tight-binding model, we theoretically evaluate the temperature dependencies of two physical quantities: the spin-lattice relaxation time $T_1$ and the orbital magnetic susceptibility. In particular, an anomalous plateau is obtained at low temperatures in the orbital diamagnetism. We presume that this anomalous plateau originates owing to the conflict between the interband diamagnetism, impurity scattering, and the nodal line deformation. We also conduct an experiment to investigate the orbital magnetism, and the results are in excellent quantitative agreement with the theory.
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Submitted 8 June, 2021;
originally announced June 2021.
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Characteristic singular behaviors of nodal line materials emerging in orbital magnetic susceptibility and Hall conductivity
Authors:
Ikuma Tateishi,
Viktor Könye,
Hiroyasu Matsuura,
Masao Ogata
Abstract:
The bulk properties of nodal line materials have been an important research topic in recent years. In this paper, we study the orbital magnetic susceptibility and the Hall conductivity of nodal line materials using the formalism with thermal Green's functions and find characteristic singular behaviors of them. It is shown that, in the vicinity of the gapless nodal line, the orbital magnetic suscep…
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The bulk properties of nodal line materials have been an important research topic in recent years. In this paper, we study the orbital magnetic susceptibility and the Hall conductivity of nodal line materials using the formalism with thermal Green's functions and find characteristic singular behaviors of them. It is shown that, in the vicinity of the gapless nodal line, the orbital magnetic susceptibility shows a $δ$-function singularity and the Hall conductivity shows a step function behavior in their chemical potential dependences. Furthermore, these singular behaviors are found to show strong field angle dependences corresponding to the orientation of the nodal line in the momentum space. These singular behaviors and strong angle dependences will give clear evidence for the presence of the nodal line and its orientation and can be used to experimentally detect nodal line materials.
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Submitted 9 March, 2021;
originally announced March 2021.
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Nodal lines and mapping to mirror Chern numbers in Ca$_2$As family
Authors:
Ikuma Tateishi
Abstract:
We study topological properties of materials in the Ca$_2$As family without spin-orbit coupling (SOC) by combining the first-principles calculation and a tight-binding model calculation. As a result of the calculation, we reveal that the Ca$2_$As family consists of one insulator phase and three nodal line phases including an intersecting nodal ring phase, though one of the phases is not found with…
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We study topological properties of materials in the Ca$_2$As family without spin-orbit coupling (SOC) by combining the first-principles calculation and a tight-binding model calculation. As a result of the calculation, we reveal that the Ca$2_$As family consists of one insulator phase and three nodal line phases including an intersecting nodal ring phase, though one of the phases is not found with realistic material parameters. Additionally, we discuss what kind of nontrivial topological invariants will emerge from each nodal line phase when SOC is introduced. We also find a mapping from a nodal line semimetal without SOC to a topological crystalline insulator with SOC. This mapping can be used to specify the realized topological phase from the candidates given by the previous phase classification method.
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Submitted 23 November, 2020; v1 submitted 5 April, 2020;
originally announced April 2020.
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Mapping rules from nodal line semimetal to topological crystalline insulator in face centered cubic lattice
Authors:
Ikuma Tateishi
Abstract:
We study what kind of topological crystalline insulator phase emerges from nodal line semimetal phases in the face-centered cubic system which is not indicated by topological indices when spin-orbit coupling (SOC) is introduced. We construct an effective model which hosts two different nodal lines phases, and calculated mirror Chern numbers in it by introducing SOC. As a result, we find that the t…
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We study what kind of topological crystalline insulator phase emerges from nodal line semimetal phases in the face-centered cubic system which is not indicated by topological indices when spin-orbit coupling (SOC) is introduced. We construct an effective model which hosts two different nodal lines phases, and calculated mirror Chern numbers in it by introducing SOC. As a result, we find that the two nodal line phases with different nodal line configurations are mapped to different topological crystalline insulator phases. This result shows that turning off SOC and checking the nodal line configuration can distinguish the two topological crystalline insulator phases, which have not been distinguished by previous methods.
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Submitted 23 November, 2020; v1 submitted 5 April, 2020;
originally announced April 2020.
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Face centered cubic SnSe as a $\mathbb{Z}_2$ trivial Dirac nodal line material
Authors:
Ikuma Tateishi,
Hiroyasu Matsuura
Abstract:
The presence of a Dirac nodal line in a time-reversal and inversion symmetric system is dictated by the $\mathbb{Z}_2$ index when spin-orbit interaction is absent. In a first principles calculation, we show that a Dirac nodal line can emerge in $\mathbb{Z}_2$ trivial material by calculating the band structure of SnSe in a face centered cubic lattice as an example. We qualitatively show that it bec…
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The presence of a Dirac nodal line in a time-reversal and inversion symmetric system is dictated by the $\mathbb{Z}_2$ index when spin-orbit interaction is absent. In a first principles calculation, we show that a Dirac nodal line can emerge in $\mathbb{Z}_2$ trivial material by calculating the band structure of SnSe in a face centered cubic lattice as an example. We qualitatively show that it becomes a topological crystalline insulator when spin-orbit interaction is taken into account. We clarify the origin of the Dirac nodal line by obtaining irreducible representations corresponding to bands and explain the triviality of the $\mathbb{Z}_2$ index. We construct an effective model representing the Dirac nodal line using the {\bf k}$\cdot${\bf p} method, and discuss the Berry phase and a surface state expected from the Dirac nodal line.
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Submitted 19 July, 2018; v1 submitted 4 April, 2018;
originally announced April 2018.
