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Topology-engineered orbital Hall effect in two-dimensional ferromagnets
Authors:
Zhiqi Chen,
Runhan Li,
Yingxi Bai,
Ning Mao,
Mahmoud Zeer,
Dongwook Go,
Ying Dai,
Baibiao Huang,
Yuriy Mokrousov,
Chengwang Niu
Abstract:
Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrat…
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Recent advances in manipulation of orbital angular momentum (OAM) within the paradigm of orbitronics present a promising avenue for the design of future electronic devices. In this context, the recently observed orbital Hall effect (OHE) occupies a special place. Here, focusing on both the second-order topological and quantum anomalous Hall insulators in two-dimensional ferromagnets, we demonstrate that topological phase transitions present an efficient and straightforward way to engineer the OHE, where the OAM distribution can be controlled by the nature of the band inversion. Using first-principles calculations, we identify Janus RuBrCl and three septuple layers of MnBi$_2$Te$_4$ as experimentally feasible examples of the proposed mechanism of OHE engineering by topology. With our work we open up new possibilities for innovative applications in topological spintronics and orbitronics.
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Submitted 11 April, 2024;
originally announced April 2024.
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Promoting $p$-based Hall effects by $p$-$d$-$f$ hybridization in Gd-based dichalcogenides
Authors:
Mahmoud Zeer,
Dongwook Go,
Peter Schmitz,
Tom G. Saunderson,
Hao Wang,
Jamal Ghabboun,
Stefan Blügel,
Wulf Wulfhekel,
Yuriy Mokrousov
Abstract:
We conduct a first-principles study of Hall effects in rare-earth dichalcogenides, focusing on monolayers of the H-phase EuX$_2$ and GdX$_2$, where X = S, Se, and Te. Our predictions reveal that all EuX$_2$ and GdX$_2$ systems exhibit high magnetic moments and wide bandgaps. We observe that while in case of EuX$_2$ the $p$ and $f$ states hybridize directly below the Fermi energy, the absence of…
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We conduct a first-principles study of Hall effects in rare-earth dichalcogenides, focusing on monolayers of the H-phase EuX$_2$ and GdX$_2$, where X = S, Se, and Te. Our predictions reveal that all EuX$_2$ and GdX$_2$ systems exhibit high magnetic moments and wide bandgaps. We observe that while in case of EuX$_2$ the $p$ and $f$ states hybridize directly below the Fermi energy, the absence of $f$ and $d$ states of Gd at the Fermi energy results in $p$-like spin-polarized electronic structure of GdX$_2$, which mediates $p$-based magnetotransport. Notably, these systems display significant anomalous, spin, and orbital Hall conductivities. We find that in GdX$_2$ the strength of correlations controls the relative position of $p$, $d$ and $f$-states and their hybridization which has a crucial impact on $p$-state polarization and the anomalous Hall effect, but not the spin and orbital Hall effect. Moreover, we find that the application of strain can significantly modify the electronic structure of the monolayers, resulting in quantized charge, spin and orbital transport in GdTe$_2$ via a strain-mediated orbital inversion mechanism taking place at the Fermi energy. Our findings suggest that rare-earth dichalcogenides hold promise as a platform for topological spintronics and orbitronics.
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Submitted 16 August, 2023;
originally announced August 2023.
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Spin and orbital transport in rare earth dichalcogenides: The case of EuS$_2$
Authors:
Mahmoud Zeer,
Dongwook Go,
Johanna P. Carbone,
Tom G. Saunderson,
Matthias Redies,
Mathias Kläui,
Jamal Ghabboun,
Wulf Wulfhekel,
Stefan Blügel,
Yuriy Mokrousov
Abstract:
We perform first-principles calculations to determine the electronic, magnetic and transport properties of rare-earth dichalcogenides taking a monolayer of the H-phase EuS$_2$ as a representative. We predict that the H-phase of the EuS$_2$ monolayer exhibits a half-metallic behavior upon doping with a very high magnetic moment. We find that the electronic structure of EuS$_2$ is very sensitive to…
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We perform first-principles calculations to determine the electronic, magnetic and transport properties of rare-earth dichalcogenides taking a monolayer of the H-phase EuS$_2$ as a representative. We predict that the H-phase of the EuS$_2$ monolayer exhibits a half-metallic behavior upon doping with a very high magnetic moment. We find that the electronic structure of EuS$_2$ is very sensitive to the value of Coulomb repulsion $U$, which effectively controls the degree of hybridization between Eu-$f$ and S-$p$ states. We further predict that the non-trivial electronic structure of EuS$_2$ directly results in a pronounced anomalous Hall effect with non-trivial band topology. Moreover, while we find that the spin Hall effect closely follows the anomalous Hall effect in the system, the orbital complexity of the system results in a very large orbital Hall effect, whose properties depend very sensitively on the strength of correlations. Our findings thus promote rare-earth based dichalcogenides as a promising platform for topological spintronics and orbitronics.
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Submitted 26 January, 2022;
originally announced January 2022.
