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X-ray Radiation Damage Effects on Double-SOI Pixel Detectors for the Future Astronomical Satellite "FORCE"
Authors:
Masatoshi Kitajima,
Kouichi Hagino,
Takayoshi Kohmura,
Mitsuki Hayashida,
Kenji Oono,
Kousuke Negishi,
Keigo Yarita,
Toshiki Doi,
Shun Tsunomachi,
Takeshi G. Tsuru,
Hiroyuki Uchida,
Kazuho Kayama,
Ryota Kodama,
Takaaki Tanaka,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Masataka Yukumoto,
Kira Mieda,
Syuto Yonemura,
Tatsunori Ishida,
Yasuo Arai,
Ikuo Kurachi
Abstract:
We have been developing the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator (SOI) technology. When the semiconductor detector is operated in orbit, it suffers from radiation damage due to X-rays emitted from the celestial objects as well as…
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We have been developing the monolithic active pixel detector "XRPIX" onboard the future X-ray astronomical satellite "FORCE". XRPIX is composed of CMOS pixel circuits, SiO2 insulator, and Si sensor by utilizing the silicon-on-insulator (SOI) technology. When the semiconductor detector is operated in orbit, it suffers from radiation damage due to X-rays emitted from the celestial objects as well as cosmic rays. From previous studies, positive charges trapped in the SiO2 insulator are known to cause the degradation of the detector performance. To improve the radiation hardness, we developed XRPIX equipped with Double-SOI (D-SOI) structure, introducing an additional silicon layer in the SiO2 insulator. This structure is aimed at compensating for the effect of the trapped positive charges. Although the radiation hardness to cosmic rays of the D-SOI detectors has been evaluated, the radiation effect due to the X-ray irradiation has not been evaluated. Then, we conduct an X-ray irradiation experiment using an X-ray generator with a total dose of 10 krad at the SiO2 insulator, equivalent to 7 years in orbit. As a result of this experiment, the energy resolution in full-width half maximum for the 5.9 keV X-ray degrades by 17.8 $\pm$ 2.8% and the dark current increases by 89 $\pm$ 13%. We also investigate the physical mechanism of the increase in the dark current due to X-ray irradiation using TCAD simulation. It is found that the increase in the dark current can be explained by the increase in the interface state density at the Si/SiO2 interface.
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Submitted 26 May, 2022;
originally announced May 2022.
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Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure
Authors:
Mitsuki Hayashida,
Kouichi Hagino,
Takayoshi Kohmura,
Masatoshi Kitajima,
Keigo Yarita,
Kenji Oono,
Kousuke Negishi,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Ryota Kodama,
Koji Mori,
Ayaki Takeda,
Yusuke Nishioka,
Takahiro Hida,
Masataka Yukumoto,
Yasuo Arai,
Ikuo Kurachi,
Hisashi Kitamura,
Shoji Kawahito,
Keita Yasutomi
Abstract:
X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-…
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X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $\pm$ 3%, yielding an energy resolution of 260.1 $\pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.
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Submitted 11 August, 2021;
originally announced August 2021.
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Low-Energy X-ray Performance of SOI Pixel Sensors for Astronomy, "XRPIX"
Authors:
Ryota Kodama,
Takeshi Go Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Yuki Amano,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Masataka Yukumoto,
Takahiro Hida,
Yasuo Arai,
Ikuo Kurachi,
Takayoshi Kohmura,
Kouichi Hagino,
Mitsuki Hayashida,
Masatoshi Kitajima,
Shoji Kawahito,
Keita Yasutomi,
Hiroki Kamehama
Abstract:
We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit…
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We have been developing a new type of X-ray pixel sensors, "XRPIX", allowing us to perform imaging spectroscopy in the wide energy band of 1-20 keV for the future Japanese X-ray satellite "FORCE". The XRPIX devices are fabricated with complementary metal-oxide-semiconductor silicon-on-insulator technology, and have the "Event-Driven readout mode", in which only a hit event is read out by using hit information from a trigger output function equipped with each pixel. This paper reports on the low-energy X-ray performance of the "XRPIX6E" device with a Pinned Depleted Diode (PDD) structure. The PDD structure especially reduces the readout noise, and hence is expected to largely improve the quantum efficiencies for low-energy X-rays. While F-K X-rays at 0.68 keV and Al-K X-rays at 1.5 keV are successfully detected in the "Frame readout mode", in which all pixels are read out serially without using the trigger output function, the device is able to detect Al-K X-rays, but not F-K X-rays in the Event-Driven readout mode. Non-uniformity is observed in the counts maps of Al-K X-rays in the Event-Driven readout mode, which is due to region-to-region variation of the pedestal voltages at the input to the comparator circuit. The lowest available threshold energy is 1.1 keV for a small region in the device where the non-uniformity is minimized. The noise of the charge sensitive amplifier at the sense node and the noise related to the trigger output function are ~$18~e^-$ (rms) and ~$13~e^-$ (rms), respectively.
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Submitted 29 September, 2020;
originally announced September 2020.
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Radiation Damage Effects on Double-SOI Pixel Sensors for X-ray Astronomy
Authors:
Kouichi Hagino,
Keigo Yarita,
Kousuke Negishi,
Kenji Oono,
Mitsuki Hayashida,
Masatoshi Kitajima,
Takayoshi Kohmura,
Takeshi G. Tsuru,
Takaaki Tanaka,
Hiroyuki Uchida,
Kazuho Kayama,
Yuki Amano,
Ryota Kodama,
Ayaki Takeda,
Koji Mori,
Yusuke Nishioka,
Masataka Yukumoto,
Takahiro Hida,
Yasuo Arai,
Ikuo Kurachi,
Tsuyoshi Hamano,
Hisashi Kitamura
Abstract:
The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the…
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The X-ray SOI pixel sensor onboard the FORCE satellite will be placed in the low earth orbit and will consequently suffer from the radiation effects mainly caused by geomagnetically trapped cosmic-ray protons. Based on previous studies on the effects of radiation on SOI pixel sensors, the positive charges trapped in the oxide layer significantly affect the performance of the sensor. To improve the radiation hardness of the SOI pixel sensors, we introduced a double-SOI (D-SOI) structure containing an additional middle Si layer in the oxide layer. The negative potential applied on the middle Si layer compensates for the radiation effects, due to the trapped positive charges. Although the radiation hardness of the D-SOI pixel sensors for applications in high-energy accelerators has been evaluated, radiation effects for astronomical application in the D-SOI sensors has not been evaluated thus far. To evaluate the radiation effects of the D-SOI sensor, we perform an irradiation experiment using a 6-MeV proton beam with a total dose of ~ 5 krad, corresponding to a few tens of years of in-orbit operation. This experiment indicates an improvement in the radiation hardness of the X- ray D-SOI devices. On using an irradiation of 5 krad on the D-SOI device, the energy resolution in the full-width half maximum for the 5.9-keV X-ray increases by 7 $\pm$ 2%, and the chip output gain decreases by 0.35 $\pm$ 0.09%. The physical mechanism of the gain degradation is also investigated; it is found that the gain degradation is caused by an increase in the parasitic capacitance due to the enlarged buried n-well.
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Submitted 16 July, 2020;
originally announced July 2020.
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Equation of state and optical properties of shock-compressed C:H:N:O molecular mixtures
Authors:
M. Guarguaglini,
J. -A. Hernandez,
T. Okuchi,
P. Barroso,
A. Benuzzi-Mounaix,
R. Bolis,
E. Brambrink,
Y. Fujimoto,
R. Kodama,
M. Koenig,
F. Lefevre,
K. Miyanishi,
N. Ozaki,
T. Sano,
Y. Umeda,
T. Vinci,
A. Ravasio
Abstract:
Water, ethanol, and ammonia are the key components of the mantles of Uranus and Neptune. To improve structure and evolution models and give an explanation of the magnetic fields and luminosities of the icy giants, those components need to be characterised at planetary conditions (some Mbar and a few $10^3$ K). Those conditions are typical of the Warm Dense Matter regime, which exhibits a rich phas…
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Water, ethanol, and ammonia are the key components of the mantles of Uranus and Neptune. To improve structure and evolution models and give an explanation of the magnetic fields and luminosities of the icy giants, those components need to be characterised at planetary conditions (some Mbar and a few $10^3$ K). Those conditions are typical of the Warm Dense Matter regime, which exhibits a rich phase diagram, with the coexistence of many states of matter and a large variety of chemical processes. H$_2$O, C:H:O, and C:H:N:O mixtures have been compressed up to 2.8 Mbar along the principal Hugoniot using laser-driven decaying shocks. The experiments were performed at the GEKKO XII and LULI 2000 laser facilities using standard optical diagnostics (Doppler velocimetry and pyrometry) to characterise equation of state and optical reflectivity of the shocked states. The results show that H$_2$O and the C:H:N:O mixture share the same equation of state with a density scaling, while the reflectivity behaves differently by what concerns both the onset pressures and the saturation values. The reflectivity measurement at two frequencies allows to estimate the conductivity and the complex refractive index using a Drude model.
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Submitted 18 April, 2018;
originally announced April 2018.
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Decaying shock studies of phase transitions in MgOSiO2 systems: implications for the Super-Earths interiors
Authors:
R. M. Bolis,
G. Morard,
T. Vinci,
A. Ravasio,
E. Bambrink,
M. Guarguaglini,
M. Koenig,
R. Musella,
F. Remus,
J. Bouchet,
N. Ozaki,
K. Miyanishi,
T. Sekine,
Y. Sakawa,
T. Sano,
R. Kodama,
F. Guyot,
A. Benuzzi-Mounaix
Abstract:
We report an experimental study of the phase diagrams of periclase (MgO), enstatite (MgSiO3) and forsterite (Mg2SiO4) at high pressures. We investigated with laser driven decaying shocks the pressure/temperature curves of MgO, MgSiO3 and Mg2SiO4 between 0.2-1.2 TPa, 0.12-0.5 TPa and 0.2-0.85 TPa respectively. A melting signature has been observed in MgO at 0.47 TPa and 9860 K, while no phase chang…
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We report an experimental study of the phase diagrams of periclase (MgO), enstatite (MgSiO3) and forsterite (Mg2SiO4) at high pressures. We investigated with laser driven decaying shocks the pressure/temperature curves of MgO, MgSiO3 and Mg2SiO4 between 0.2-1.2 TPa, 0.12-0.5 TPa and 0.2-0.85 TPa respectively. A melting signature has been observed in MgO at 0.47 TPa and 9860 K, while no phase changes were observed neither in MgSiO3 nor in Mg2SiO4. An increasing of reflectivity of MgO, MgSiO3 and Mg2SiO4 liquids have been detected at 0.55 TPa -12 760 K, 0.15 TPa - 7540 K, 0.2 TPa - 5800 K, respectively. In contrast to SiO2, melting and metallization of these compounds do not coincide implying the presence of poor electrically conducting liquids close to the melting lines. This has important implications for the generation of dynamos in Super-earths mantles.
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Submitted 6 April, 2016;
originally announced April 2016.
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Laser-Shock Compression and Hugoniot Measurements of Liquid Hydrogen to 55 GPa
Authors:
T. Sano,
N. Ozaki,
T. Sakaiya,
K. Shigemori,
M. Ikoma,
T. Kimura,
K. Miyanishi,
T. Endo,
A. Shiroshita,
H. Takahashi,
T. Jitsui,
Y. Hori,
Y. Hironaka,
A. Iwamoto,
T. Kadono,
M. Nakai,
T. Okuchi,
K. Otani,
K. Shimizu,
T. Kondo,
R. Kodama,
K. Mima
Abstract:
The principal Hugoniot for liquid hydrogen was obtained up to 55 GPa under laser-driven shock loading. Pressure and density of compressed hydrogen were determined by impedance-matching to a quartz standard. The shock temperature was independently measured from the brightness of the shock front. Hugoniot data of hydrogen provide a good benchmark to modern theories of condensed matter. The initial n…
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The principal Hugoniot for liquid hydrogen was obtained up to 55 GPa under laser-driven shock loading. Pressure and density of compressed hydrogen were determined by impedance-matching to a quartz standard. The shock temperature was independently measured from the brightness of the shock front. Hugoniot data of hydrogen provide a good benchmark to modern theories of condensed matter. The initial number density of liquid hydrogen is lower than that for liquid deuterium, and this results in shock compressed hydrogen having a higher compression and higher temperature than deuterium at the same shock pressure.
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Submitted 6 January, 2011;
originally announced January 2011.
