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Epitaxial growth, optical and electrical conductivity of the metallic pyrochlore Bi$_2$Ru$_2$O$_7$ on Y-stabilized ZrO$_2$ substrate
Authors:
Marita O'Sullivan,
Jonathan Alaria,
Mike W. Gaultois,
Matthew S. Dyer,
John B. Claridge,
Matthew J. Rosseinsky
Abstract:
We report on the epitaxial growth, structural and electrical properties of metallic pyrochlore bismuth ruthenate heterostructures grown along both the [001] and [111] directions. Ordered pyrochlore thin films were obtained with highly oriented texture along the [001] and [111] crystallographic directions. Density functional theory calculations of the electronic band structure and density of states…
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We report on the epitaxial growth, structural and electrical properties of metallic pyrochlore bismuth ruthenate heterostructures grown along both the [001] and [111] directions. Ordered pyrochlore thin films were obtained with highly oriented texture along the [001] and [111] crystallographic directions. Density functional theory calculations of the electronic band structure and density of states indicated that Bi$_2$Ru$_2$O$_7$ is semimetallic and that hybridization of the Ru 4$d$ and Bi 6$p$ orbitals via the anion network at the Fermi energy was responsible for the metallicity. Electrical conductivity measurements confirmed that the compound is weakly metallic in agreement with the reported conductivity for the stoichiometric bulk compound. The carrier concentration and mobility of the electrons compared favorably with previous reports on bulk material and indicate strong electron-electron interactions. The measured and computed optical conductivities were found to share coincident spectral features and confirm the electronic correlation. Comparison of the electrical and optical properties of the two distinct orientations indicates differences that cannot be attributed to differences in crystalline quality or dislocations and may indicate anisotropy in the electronic structure of Bi$_2$Ru$_2$O$_7$. This study will enable access to the kagome lattice arising naturally in the {111} planes of the pyrochlore B cation sublattice which may be used to uncover emergent topological properties.
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Submitted 28 January, 2023;
originally announced January 2023.
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Weyl-like points from band inversions of spin-polarised surface states in NbGeSb
Authors:
I. Marković,
C. A. Hooley,
O. J. Clark,
F. Mazzola,
M. D. Watson,
J. M. Riley,
K. Volckaert,
K. Underwood,
M. S. Dyer,
P. A. E. Murgatroyd,
K. J. Murphy,
P. Le Fèvre,
F. Bertran,
J. Fujii,
I. Vobornik,
S. Wu,
T. Okuda,
J. Alaria,
P. D. C. King
Abstract:
Band inversions are key to stabilising a variety of novel electronic states in solids, from topological surface states in inverted bulk band gaps of topological insulators to the formation of symmetry-protected three-dimensional Dirac and Weyl points and nodal-line semimetals. Here, we create a band inversion not of bulk states, but rather between manifolds of surface states. We realise this by al…
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Band inversions are key to stabilising a variety of novel electronic states in solids, from topological surface states in inverted bulk band gaps of topological insulators to the formation of symmetry-protected three-dimensional Dirac and Weyl points and nodal-line semimetals. Here, we create a band inversion not of bulk states, but rather between manifolds of surface states. We realise this by aliovalent substitution of Nb for Zr and Sb for S in the ZrSiS family of nonsymmorphic semimetals. Using angle-resolved photoemission and density-functional theory, we show how two pairs of surface states, known from ZrSiS, are driven to intersect each other in the vicinity of the Fermi level in NbGeSb, as well as to develop pronounced spin-orbit mediated spin splittings. We demonstrate how mirror symmetry leads to protected crossing points in the resulting spin-orbital entangled surface band structure, thereby stabilising surface state analogues of three-dimensional Weyl points. More generally, our observations suggest new opportunities for engineering topologically and symmetry-protected states via band inversions of surface states.
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Submitted 19 November, 2019;
originally announced November 2019.
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Growth and characterization of heteroepitaxial La-substituted BaSnO$_3$ films on SrTiO$_3$ (001) and SmScO$_3$ (110) substrates
Authors:
P. V. Wadekar,
J. Alaria,
M. O'Sullivan,
N. L. O. Flack,
T. D. Manning,
L. J. Phillips,
K. Durose,
O. Lozano,
S. Lucas,
J. B. Claridge,
M. J. Rosseinsky
Abstract:
Heteroepitaxial growth of BaSnO$_3$ (BSO) and Ba$_{1-x}$La$_x$SnO$_3$ (x = 7 %) (LBSO) thin films on different perovskite single crystal (SrTiO$_3$ (001) and SmScO$_3$ (110)) substrates has been achieved by Pulsed Laser Deposition (PLD) under optimized deposition conditions. X-ray diffraction measurements indicate that the films on either of these substrates are relaxed due to the large mismatch a…
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Heteroepitaxial growth of BaSnO$_3$ (BSO) and Ba$_{1-x}$La$_x$SnO$_3$ (x = 7 %) (LBSO) thin films on different perovskite single crystal (SrTiO$_3$ (001) and SmScO$_3$ (110)) substrates has been achieved by Pulsed Laser Deposition (PLD) under optimized deposition conditions. X-ray diffraction measurements indicate that the films on either of these substrates are relaxed due to the large mismatch and present a high degree of crystallinity with narrow rocking curves and smooth surface morphology while analytical quantification by proton induced x-ray emission (PIXE) confirms the stoichiometric La transfer from a polyphasic target, producing films with La contents above the bulk solubility limit. The films show degenerate semiconducting behavior on both substrates, with the observed room temperature resistivities, Hall mobilities and carrier concentrations of 4.4 $m Ωcm$, 10.11 $cm^2 V^{-1} s^{-1}$, and 1.38 $\cdot 10^{20} cm^{-3}$ on SmScO$_3$ and 7.8 $m Ωcm$, 5.8 $cm^2 V^{-1} s^{-1}$, and 1.36 $\cdot 10^{20} cm^{-3}$ on SrTiO$_3$ ruling out any extrinsic contribution from the substrate. The superior electrical properties observed on the SmScO3 substrate are attributed to reduction in dislocation density from the lower lattice mismatch.
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Submitted 23 May, 2014;
originally announced May 2014.
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Engineered spatial inversion symmetry breaking in an oxide heterostructure built from isosymmetric room-temperature magnetically ordered components
Authors:
J. Alaria,
P. Borisov,
M. S. Dyer,
T. D. Manning,
S. Lepadatu,
M. G. Cain,
E. D. Mishina,
N. E. Sherstyuk,
N. A. Ilyin,
J. Hadermann,
D. Lederman,
J. B. Claridge,
M. J. Rosseinsky
Abstract:
The oxide heterostructure [(YFeO$_3$)$_5$(LaFeO$_3$)$_5$]$_{40}$, which is magnetically ordered and piezoelectric at room temperature, has been constructed from two weak ferromagnetic AFeO$_3$ perovskites with different A cations using RHEED-monitored pulsed laser deposition. The polarisation arises through the removal of inversion centres present within the individual AFeO$_3$ components. This sy…
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The oxide heterostructure [(YFeO$_3$)$_5$(LaFeO$_3$)$_5$]$_{40}$, which is magnetically ordered and piezoelectric at room temperature, has been constructed from two weak ferromagnetic AFeO$_3$ perovskites with different A cations using RHEED-monitored pulsed laser deposition. The polarisation arises through the removal of inversion centres present within the individual AFeO$_3$ components. This symmetry reduction is a result of combining ordering on the A site, imposed by the periodicity of the grown structure, with appropriate orientations of the octahedral tilting characteristic of the perovskite units themselves, according to simple symmetry-controlled rules. The polarisation is robust against A site interdiffusion between the two layers which produces a sinusoidally modulated occupancy that retains the coupling of translational and point symmetries required to produce a polar structure. Magnetization and magneto-optical Kerr rotation measurements show that the heterostructure's magnetic structure is similar to that of the individual components. Evidence of the polarity was obtained from second harmonic generation and piezoelectric force microscopy measurements. Modeling of the piezoresponse allows extraction of $d_{33}$ (approximately 10 pC/N) of the heterostructure, which is in agreement with DFT calculations.
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Submitted 27 November, 2013;
originally announced November 2013.