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Dynamics of Gate-Controlled Superconducting Dayem Bridges
Authors:
François Joint,
Kazi Rafsanjani Amin,
Ivo Cools,
Simone Gasparinetti
Abstract:
Local control of superconducting circuits by high-impedance electrical gates offers potential advantages in superconducting logic, quantum processing units, and cryoelectronics. Recent experiments have reported gate-controlled supercurrent in Dayem bridges made of metallic superconductors, mediated by direct current leakage, out-of-equilibrium phonons, or possibly other mechanisms. However, a time…
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Local control of superconducting circuits by high-impedance electrical gates offers potential advantages in superconducting logic, quantum processing units, and cryoelectronics. Recent experiments have reported gate-controlled supercurrent in Dayem bridges made of metallic superconductors, mediated by direct current leakage, out-of-equilibrium phonons, or possibly other mechanisms. However, a time-domain characterization of this effect has been lacking. Here, we integrate Dayem bridges made of Niobium on Silicon into coplanar-waveguide resonators, and measure the effect of the gate voltage at steady state and during pulsed operation. We consider two types of arrangements for the gate: a side-coupled gate and a remote injector. In both cases, we observe sizable changes in the real and the imaginary part of the constriction's impedance for gate voltages of the order of 1 V. However, we find striking differences in the time-domain dynamics, with the remote injector providing a faster and more controlled response. Our results contribute to our understanding of gate-controlled superconducting devices and their suitability for applications.
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Submitted 12 May, 2024;
originally announced May 2024.
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First-order quantum breakdown of superconductivity in amorphous superconductors
Authors:
Thibault Charpentier,
David Perconte,
Sébastien Léger,
Kazi Rafsanjani Amin,
Florent Blondelle,
Frédéric Gay,
Olivier Buisson,
Lev Ioffe,
Anton Khvalyuk,
Igor Poboiko,
Mikhail Feigel'man,
Nicolas Roch,
Benjamin Sacépé
Abstract:
Continuous quantum phase transitions are widely assumed and frequently observed in various systems of quantum particles or spins. Their characteristic trait involves scaling laws governing a second-order, gradual suppression of the order parameter as the quantum critical point is approached. The localization of Cooper pairs in disordered superconductors and the resulting breakdown of superconducti…
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Continuous quantum phase transitions are widely assumed and frequently observed in various systems of quantum particles or spins. Their characteristic trait involves scaling laws governing a second-order, gradual suppression of the order parameter as the quantum critical point is approached. The localization of Cooper pairs in disordered superconductors and the resulting breakdown of superconductivity have long stood as a prototypical example. Here, we show a departure from this paradigm, showcasing that amorphous superconducting films of indium oxide undergo a distinctive, discontinuous first-order quantum phase transition tuned by disorder. Through systematic measurements of the plasmon spectrum in superconducting microwave resonators, we provide evidence for a marked jump of both the zero-temperature superfluid stiffness and the transition temperature at the critical disorder. This discontinuous transition sheds light on the previously overlooked role of repulsive interactions between Cooper pairs and the subsequent competition between superconductivity and insulating Cooper-pair glass. Furthermore, our investigation shows that the critical temperature of the films no longer relates to the pairing amplitude but aligns with the superfluid stiffness, consistent with the pseudogap regime of preformed Cooper pairs. Our findings raise fundamental new questions into the role of disorder in quantum phase transitions and carry implications for superinductances in quantum circuits.
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Submitted 27 May, 2024; v1 submitted 15 April, 2024;
originally announced April 2024.
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Dynamical excitation control and multimode emission of an atom-photon bound state
Authors:
Claudia Castillo-Moreno,
Kazi Rafsanjani Amin,
Ingrid Strandberg,
Mikael Kervinen,
Amr Osman,
Simone Gasparinetti
Abstract:
Atom-photon bound states arise from the coupling of quantum emitters to the band edge of dispersion-engineered waveguides. Thanks to their tunable-range interactions, they are promising building blocks for quantum simulators. Here, we study the dynamics of an atom-photon bound state emerging from coupling a frequency-tunable quantum emitter - a transmon-type superconducting circuit - to the band e…
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Atom-photon bound states arise from the coupling of quantum emitters to the band edge of dispersion-engineered waveguides. Thanks to their tunable-range interactions, they are promising building blocks for quantum simulators. Here, we study the dynamics of an atom-photon bound state emerging from coupling a frequency-tunable quantum emitter - a transmon-type superconducting circuit - to the band edge of a microwave metamaterial. Employing precise temporal control over the frequency detuning of the emitter from the band edge, we examine the transition from adiabatic to non-adiabatic behavior in the formation of the bound state and its melting into the propagating modes of the metamaterial. Moreover, we experimentally observe multi-mode emission from the bound state, triggered by a fast change of the emitter's frequency. Our study offers insight into the dynamic preparation of atom-photon bound states and provides a method to characterize their photonic content, with implications in quantum optics and quantum simulation.
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Submitted 8 April, 2024;
originally announced April 2024.
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Direct detection of quasiparticle tunneling with a charge-sensitive superconducting sensor coupled to a waveguide
Authors:
Kazi Rafsanjani Amin,
Axel M. Eriksson,
Mikael Kervinen,
Linus Andersson,
Robert Rehammar,
Simone Gasparinetti
Abstract:
Detecting quasiparticle tunneling events in superconducting circuits provides information about the population and dynamics of non-equilibrium quasiparticles. Such events can be detected by monitoring changes in the frequency of an offset-charge-sensitive superconducting qubit. This monitoring has so far been performed by Ramsey interferometry assisted by a readout resonator. Here, we demonstrate…
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Detecting quasiparticle tunneling events in superconducting circuits provides information about the population and dynamics of non-equilibrium quasiparticles. Such events can be detected by monitoring changes in the frequency of an offset-charge-sensitive superconducting qubit. This monitoring has so far been performed by Ramsey interferometry assisted by a readout resonator. Here, we demonstrate a quasiparticle detector based on a superconducting qubit directly coupled to a waveguide. We directly measure quasiparticle number parity on the qubit island by probing the coherent scattering of a microwave tone, offering simplicity of operation, fast detection speed, and a large signal-to-noise ratio. We observe tunneling rates between 0.8 and $7~\rm{s}^{-1}$, depending on the average occupation of the detector qubit, and achieve a temporal resolution below $10~μ\rm{s}$ without a quantum-limited amplifier. Our simple and efficient detector lowers the barrier to perform studies of quasiparticle population and dynamics, facilitating progress in fundamental science, quantum information processing, and sensing.
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Submitted 1 April, 2024;
originally announced April 2024.
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Universality of Anderson Localization Transitions in the Integer and Fractional Quantum Hall Regime
Authors:
Simrandeep Kaur,
Tanima Chanda,
Kazi Rafsanjani Amin,
Kenji Watanabe,
Takashi Taniguchi,
Unmesh Ghorai,
Yuval Gefen,
G. J. Sreejith,
Aveek Bid
Abstract:
Understanding the interplay between electronic interactions and disorder-induced localization has been a longstanding quest in the physics of quantum materials. One of the most convincing demonstrations of the scaling theory of localization for noninteracting electrons has come from plateau transitions in the integer quantum Hall effect with short-range disorder, wherein the localization length di…
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Understanding the interplay between electronic interactions and disorder-induced localization has been a longstanding quest in the physics of quantum materials. One of the most convincing demonstrations of the scaling theory of localization for noninteracting electrons has come from plateau transitions in the integer quantum Hall effect with short-range disorder, wherein the localization length diverges as the critical filling factor is approached with a measured scaling exponent close to the theoretical estimates. In this work, we extend this physics to the fractional quantum Hall effect, a paradigmatic phenomenon arising from a confluence of interaction, disorder, and topology. We employ high-mobility trilayer graphene devices where the transport is dominated by short-range impurity scattering, and the extent of Landau level mixing can be varied by a perpendicular electric field. Our principal finding is that the plateau-to-plateau transitions from N+1/3 to N+2/5 and from N+2/5 to N+3/7 fractional states are governed by a universal scaling exponent, which is identical to that for the integer plateau transitions and is independent of the perpendicular electric field. These observations and the values of the critical filling factors are consistent with a description in terms of Anderson localization-delocalization transitions of weakly interacting electron-flux bound states called composite Fermions. This points to a universal effective physics underlying fractional and integer plateau-to-plateau transitions independent of the quasiparticle statistics of the phases and unaffected by weak Landau level mixing. Besides clarifying the conditions for the realization of the scaling regime for composite fermions, the work opens the possibility of exploring a wide variety of plateau transitions realized in graphene, including the fractional anomalous Hall phases and non-abelian FQH states.
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Submitted 12 December, 2023; v1 submitted 11 December, 2023;
originally announced December 2023.
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Room Temperature Magneto-dielectric coupling in the CaMnO3 modified NBT lead-free ceramics
Authors:
Koyal Suman Samantaray,
Ruhul Amin,
Saniya Ayaz,
A. K. Pathak,
Christopher Hanley,
A. Mekki,
K. Harrabi,
Somaditya Sen
Abstract:
The sol-gel prepared (1-x) Na0.5Bi0.5TiO3- (x) CaMnO3 (x=0, 0.03, 0.06, 0.12) compositions show a Rhombohedral (R3c) phase for x=0.06 while a mixed Rhombohedral (R3c) and orthorhombic (Pnma) phases for the x=0.12. The lattice volume consistently decreased with an increase in the CaMnO3 content. The phase transition temperature (Tc) decreased with an increase in the CaMnO3 compositions. The room te…
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The sol-gel prepared (1-x) Na0.5Bi0.5TiO3- (x) CaMnO3 (x=0, 0.03, 0.06, 0.12) compositions show a Rhombohedral (R3c) phase for x=0.06 while a mixed Rhombohedral (R3c) and orthorhombic (Pnma) phases for the x=0.12. The lattice volume consistently decreased with an increase in the CaMnO3 content. The phase transition temperature (Tc) decreased with an increase in the CaMnO3 compositions. The room temperature dielectric constant increased, and loss decreased for the x=0.03 composition due to a decrease in the oxygen vacancy and Bi loss confirmed by the valence state study (XPS). All the compositions show a variation of the room temperature dielectric property with an application of magnetic field confirming a magnetodielectric coupling. The x=0.06 composition shows the highest negative magnetodielectric constant (MD%) of 3.69 at 100kHz at an applied field of 5 kG.
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Submitted 15 May, 2022;
originally announced May 2022.
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A gate-tunable graphene Josephson parametric amplifier
Authors:
Guilliam Butseraen,
Arpit Ranadive,
Nicolas Aparicio,
Kazi Rafsanjani Amin,
Abhishek Juyal,
Martina Esposito,
Kenji Watanabe,
Takashi Taniguchi,
Nicolas Roch,
François Lefloch,
Julien Renard
Abstract:
With a large portfolio of elemental quantum components, superconducting quantum circuits have contributed to dramatic advances in microwave quantum optics. Of these elements, quantum-limited parametric amplifiers have proven to be essential for low noise readout of quantum systems whose energy range is intrinsically low (tens of $μ$eV ). They are also used to generate non classical states of light…
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With a large portfolio of elemental quantum components, superconducting quantum circuits have contributed to dramatic advances in microwave quantum optics. Of these elements, quantum-limited parametric amplifiers have proven to be essential for low noise readout of quantum systems whose energy range is intrinsically low (tens of $μ$eV ). They are also used to generate non classical states of light that can be a resource for quantum enhanced detection. Superconducting parametric amplifiers, like quantum bits, typically utilize a Josephson junction as a source of magnetically tunable and dissipation-free nonlinearity. In recent years, efforts have been made to introduce semiconductor weak links as electrically tunable nonlinear elements, with demonstrations of microwave resonators and quantum bits using semiconductor nanowires, a two dimensional electron gas, carbon nanotubes and graphene. However, given the challenge of balancing nonlinearity, dissipation, participation, and energy scale, parametric amplifiers have not yet been implemented with a semiconductor weak link. Here we demonstrate a parametric amplifier leveraging a graphene Josephson junction and show that its working frequency is widely tunable with a gate voltage. We report gain exceeding 20 dB and noise performance close to the standard quantum limit. Our results complete the toolset for electrically tunable superconducting quantum circuits and offer new opportunities for the development of quantum technologies such as quantum computing, quantum sensing and fundamental science.
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Submitted 5 April, 2022;
originally announced April 2022.
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Multifractal conductance fluctuations in high-mobility graphene in the Integer Quantum Hall regime
Authors:
Kazi Rafsanjani Amin,
Ramya Nagarajan,
Rahul Pandit,
Aveek Bid
Abstract:
We present the first experimental evidence for the multifractality of a transport property at a topological phase transition. In particular, we show that conductance fluctuations display multifractality at the integer-quantum-Hall $ν=1 \longleftrightarrow ν=2$ plateau-to-plateau transition in a high-mobility mesoscopic graphene device. We establish that to observe this multifractality, it is cruci…
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We present the first experimental evidence for the multifractality of a transport property at a topological phase transition. In particular, we show that conductance fluctuations display multifractality at the integer-quantum-Hall $ν=1 \longleftrightarrow ν=2$ plateau-to-plateau transition in a high-mobility mesoscopic graphene device. We establish that to observe this multifractality, it is crucial to work with very high-mobility devices with a well-defined critical point. This multifractality gets rapidly suppressed as the chemical potential moves away from these critical points. Our combination of multifractal analysis with state-of-the-art transport measurements at a topological phase transition provides a novel method for probing such phase transitions in mesoscopic devices.
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Submitted 28 December, 2021;
originally announced December 2021.
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Defect Dipole Induced Improved Electrocaloric Effect in Modified NBT-6BT Lead-Free Ceramics
Authors:
Koyal Suman Samantaray,
Ruhul Amin,
E. G Rini,
Indranil Bhaumik,
A. Mekki,
K. Harrabi,
Somaditya Sen
Abstract:
The Rietveld refinement of the polycrystalline powders of 1% Fe and Mn-doped (Na0.5Bi0.5)0.94Ba0.06Ti0.98V0.02O3 at the Ti-site confirmed a single rhombohedral (R3c) phase. The bandgap, (Eg) was affected by the anti-phase octahedral tilt angle and the spin-orbit splitting energy of Ti4+2p3/2 and Ti4+2p1/2 states. The decrease in Bi loss and increase in the binding energy of Ba due to Fe/Mn doping…
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The Rietveld refinement of the polycrystalline powders of 1% Fe and Mn-doped (Na0.5Bi0.5)0.94Ba0.06Ti0.98V0.02O3 at the Ti-site confirmed a single rhombohedral (R3c) phase. The bandgap, (Eg) was affected by the anti-phase octahedral tilt angle and the spin-orbit splitting energy of Ti4+2p3/2 and Ti4+2p1/2 states. The decrease in Bi loss and increase in the binding energy of Ba due to Fe/Mn doping has been correlated to the strengthening of Bi-O and Ba-O bonds which was revealed from the XPS studies thereby further related to the average A-O bond length from structural studies. Hence, a reduction of oxygen vacancy (VO) for the doped samples has been justified. A significant improvement of the dielectric constant, relaxation time (τ0), and the decrease in conductivity due to doping was revealed from the frequency-dependent (10Hz-1MHz) dielectric measurement study. The conduction and relaxation process is dominated by the short-range movement of defects. The activation energy (Ea ~1eV) revealed that there is a presence of double-ionized VOs. The ECE study showed a significant enhancement of the changes in entropy, and the adiabatic temperature difference due to doping, with the change in tempearture being highest in the Fe-doped sample. Such improvement of dielectric and ECE properties was confirmed due to the reduction of the mobility of oxygen vacancy because of the formation defect dipoles.
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Submitted 8 October, 2021;
originally announced October 2021.
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A CMOS compatible platform for high impedance superconducting quantum circuits
Authors:
Kazi Rafsanjani Amin,
Carine Ladner,
Guillaume Jourdan,
Sebastien Hentz,
Nicolas Roch,
Julien Renard
Abstract:
Aluminium based platforms have allowed to reach major milestones for superconducting quantum circuits. For the next generation of devices, materials that are able to maintain low microwave losses while providing new functionalities, such as large kinetic inductance or compatibility with CMOS platform are sought for. Here we report on a combined direct current (DC) and microwave investigation of ti…
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Aluminium based platforms have allowed to reach major milestones for superconducting quantum circuits. For the next generation of devices, materials that are able to maintain low microwave losses while providing new functionalities, such as large kinetic inductance or compatibility with CMOS platform are sought for. Here we report on a combined direct current (DC) and microwave investigation of titanium nitride lms of dierent thicknesses grown using CMOS compatible methods. For microwave resonators made of TiN lm of thickness $\sim$3 nm, we measured large kinetic inductance LK $\sim$ 240 pH/sq, high mode impedance of $\sim$ 4.2 k$Ω$ while maintaining microwave quality factor $\sim$ 10^5 in the single photon limit. We present an in-depth study of the microwave loss mechanisms in these devices that indicates the importance of quasiparticles and provide insights for further improvement.
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Submitted 14 September, 2021;
originally announced September 2021.
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Strain Induced Modulation of Local Transport of 2D Materials at the Nanoscale
Authors:
Rishi Maiti,
Md Abid Shahriar Rahman Saadi,
Rubab Amin,
Ongun Ozcelik,
Berkin Uluutku,
Chandraman Patil,
Can Suer,
Santiago Solares,
Volker J. Sorger
Abstract:
Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for exam…
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Strain engineering offers unique control to manipulate the electronic band structure of two-dimensional materials (2DMs) resulting in an effective and continuous tuning of the physical properties. Ad-hoc straining 2D materials has demonstrated novel devices including efficient photodetectors at telecommunication frequencies, enhanced-mobility transistors, and on-chip single photon source, for example. However, in order to gain insights into the underlying mechanism required to enhance the performance of the next-generation devices with strain(op)tronics, it is imperative to understand the nano- and microscopic properties as a function of a strong non-homogeneous strain. Here, we study the strain-induced variation of local conductivity of a few-layer transition-metal-dichalcogenide using a conductive atomic force microscopy. We report a novel strain characterization technique by capturing the electrical conductivity variations induced by local strain originating from surface topography at the nanoscale, which allows overcoming limitations of existing optical spectroscopy techniques. We show that the conductivity variations parallel the strain deviations across the geometry predicted by molecular dynamics simulation. These results substantiate a variation of the effective mass and surface charge density by .026 me/% and .03e/% of uniaxial strain, respectively. Furthermore, we show and quantify how a gradual reduction of the conduction band minima as a function of tensile strain explains the observed reduced effective Schottky barrier height. Such spatially-textured electronic behavior via surface topography induced strain variations in atomistic-layered materials at the nanoscale opens up new opportunities to control fundamental material properties and offers a myriad of design and functional device possibilities for electronics, nanophotonics, flextronics, or smart cloths.
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Submitted 14 December, 2020;
originally announced December 2020.
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Effect of dimensionality on the vortex-dynamics in type-II superconductor
Authors:
Hemanta Kumar Kundu,
Kazi Rafsanjani Amin,
John Jesudasan,
Pratap Raychaudhuri,
Subroto Mukerjee,
Aveek Bid
Abstract:
We explore the effects of sample dimensionality on vortex pinning in a type-II, low-$T_C$, s-wave superconductor, NbN, in the presence of a perpendicular magnetic field, $H$. We find significant differences in the phase diagrams in the magnetic field--temperature plane between 3-dimensional (3D) and 2-dimensional (2D) NbN films. The differences are most striking close to the normal-superconductor…
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We explore the effects of sample dimensionality on vortex pinning in a type-II, low-$T_C$, s-wave superconductor, NbN, in the presence of a perpendicular magnetic field, $H$. We find significant differences in the phase diagrams in the magnetic field--temperature plane between 3-dimensional (3D) and 2-dimensional (2D) NbN films. The differences are most striking close to the normal-superconductor phase transition. We establish that these variances have their origin in the differing pinning properties in two different dimensions. We obtain the pinning strength quantitatively in both the dimensions from two independent transport measurements performed in two different regimes of vortex-motion -- (i) thermally assisted flux-flow (TAFF) regime and (ii) flux flow (FF) regime. Both the measurements consistently show that both the pinning potential and the zero-field free-energy barrier to depinning in the 3D superconductor are at least an order of magnitude stronger than that in the 2D superconductor. Further, we probed the dynamics of pinning in both 2D and 3D superconductor through voltage fluctuation spectroscopy. We find that the mechanism of vortex pinning-depinning is qualitatively similar for the 3D and 2D superconductors. The voltage-fluctuations arising from vortex-motion are found to be correlated only in the 2D superconductor. We establish this to be due to the presence of long-range phase fluctuations near the Berezinskii-Kosterlitz-Thouless (BKT) type superconducting transition in 2-dimensional superconductors.
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Submitted 19 September, 2020;
originally announced September 2020.
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Low Dimensional Material based Electro-Optic Phase Modulation Performance Analysis
Authors:
Rubab Amin,
Rishi Maiti,
Jacob B. Khurgin,
Volker J. Sorger
Abstract:
Electro-optic modulators are utilized ubiquitously ranging from applications in data communication to photonic neural networks. While tremendous progress has been made over the years, efficient phase-shifting modulators are challenged with fundamental tradeoffs, such as voltage-length, index change-losses or energy-bandwidth, and no single solution available checks all boxes. While voltage-driven…
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Electro-optic modulators are utilized ubiquitously ranging from applications in data communication to photonic neural networks. While tremendous progress has been made over the years, efficient phase-shifting modulators are challenged with fundamental tradeoffs, such as voltage-length, index change-losses or energy-bandwidth, and no single solution available checks all boxes. While voltage-driven phase modulators, such as based on lithium niobate, offer low loss and high speed operation, their footprint of 10's of cm-scale is prohibitively large, especially for density-critical applications, for example in photonic neural networks. Ignoring modulators for quantum applications, where loss is critical, here we distinguish between current versus voltage-driven modulators. We focus on the former, since current-based schemes of emerging thin electro-optical materials have shown unity-strong index modulation suitable for heterogeneous integration into foundry waveguides. Here, we provide an in-depth ab-initio analysis of obtainable modulator performance based on heterogeneously integrating low-dimensional materials, i.e. graphene, thin films of indium tin oxide, and transition metal dichalcogenide monolayers into a plurality of optical waveguide designs atop silicon photonics. Using the fundamental modulator tradeoff of energy-bandwidth-product as a design-quality quantifier, we show that a small modal cross section, such as given by plasmonic modes, enables high-performance operation, physically realized by arguments on charge-distribution and low electrical resistance. An in-depth design understanding of phase-modulator performance, beyond doped-junctions in silicon, offers opportunities for micrometer-compact yet energy-bandwidth-ratio constrained modulators with timely opportunities to hardware-accelerate applications beyond data communication towards photonic machine intelligence.
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Submitted 15 August, 2020;
originally announced August 2020.
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A semi-empirical integrated microring cavity approach for 2D material optical index identification at 1.55 μm
Authors:
Rishi Maiti,
Rohit A. Hemnani,
Rubab Amin,
Zhizhen Ma,
Mohammad H. Tahersima,
Tom A. Empante,
Hamed Dalir,
Ritesh Agarwal,
Ludwig Bartels,
Volker J. Sorger
Abstract:
Atomically thin two-dimensional (2D) materials provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform for advances in optical communication technology. Control and understanding of the precise value of the optical index of these materials, however, is challenging, due to the small lateral flake dimension. He…
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Atomically thin two-dimensional (2D) materials provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform for advances in optical communication technology. Control and understanding of the precise value of the optical index of these materials, however, is challenging, due to the small lateral flake dimension. Here we demonstrate a semi-empirical method to determine the index of a 2D material (nMoTe2 of 4.36+0.011i) near telecommunication-relevant wavelength by integrating few layers of MoTe2 onto a micro-ring resonator. The placement, control, and optical-property understanding of 2D materials with integrated photonics paves a way for further studies of active 2D material-based optoelectronics and circuits.
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Submitted 22 December, 2019; v1 submitted 10 November, 2018;
originally announced November 2018.
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Exotic Multifractal Conductance Fluctuations in Graphene
Authors:
Kazi Rafsanjani Amin,
Samriddhi Sankar Ray,
Nairita Pal,
Rahul Pandit,
Aveek Bid
Abstract:
In quantum systems, signatures of multifractality are rare. They have been found only in the multiscaling of eigenfunctions at critical points. Here we demonstrate multifractality in the magnetic-field-induced universal conductance fluctuations of the conductance in a quantum condensed-matter system, namely, high-mobility single-layer graphene field-effect transistors. This multifractality decreas…
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In quantum systems, signatures of multifractality are rare. They have been found only in the multiscaling of eigenfunctions at critical points. Here we demonstrate multifractality in the magnetic-field-induced universal conductance fluctuations of the conductance in a quantum condensed-matter system, namely, high-mobility single-layer graphene field-effect transistors. This multifractality decreases as the temperature increases or as doping moves the system away from the Dirac point. Our measurements and analysis present evidence for an incipient Anderson-localization near the Dirac point as the most plausible cause for this multifractality. Our experiments suggest that multifractality in the scaling behaviour of local eigenfunctions are reflected in macroscopic transport coefficients. We conjecture that an incipient Anderson-localization transition may be the origin of this multifractality. It is possible that multifractality is ubiquitous in transport properties of low-dimensional systems. Indeed, our work suggests that we should look for multifractality in transport in other low-dimensional quantum condensed-matter systems.
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Submitted 12 April, 2018;
originally announced April 2018.
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Active Material, Optical Mode and Cavity Impact on electro-optic Modulation Performance
Authors:
Rubab Amin,
Can Suer,
Zhizhen Ma,
Jacob B. Khurgin,
Ritesh Agarwal,
Volker J. Sorger
Abstract:
In this paper, three different materials Si, ITO and graphene; and three different types of mode structures bulk, slot and hybrid; based on their electrooptical and electro absorptive aspects in performance are analyzed. The study focuses on three major characteristics of electrooptic tuning, i.e. material, modal and cavity dependency. The materials are characterized with established models and th…
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In this paper, three different materials Si, ITO and graphene; and three different types of mode structures bulk, slot and hybrid; based on their electrooptical and electro absorptive aspects in performance are analyzed. The study focuses on three major characteristics of electrooptic tuning, i.e. material, modal and cavity dependency. The materials are characterized with established models and the allowed ranges for their key parameter spectra are analyzed with desired tuning in mind; categorizing into n and k dominant regions for plausible electrooptic and electro absorptive applications, respectively. A semi analytic approach, with the aid of FEM simulations for the eigenmode calculations, was used for this work. Electrooptic tuning i.e. resonance shift properties inside Fabry Perot cavities are investigated with modal and scaling concerns in mind. Tuning changes the effective complex refractive index of the mode dictated by the Kramers Kronig relations which subsequently suggest a tradeoff between the resonance shift and increasing losses. The electrical tuning properties of the different modes in the cavity are analyzed, and subsequently a figure of merit, delta-lambda/delta-alpha was chosen with respect to carrier concentration and cavity scaling to find prospective suitable regions for desired tuning effects.
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Submitted 7 December, 2016;
originally announced December 2016.
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Importance of strain reduction in improvement of optical transmission and conductance in Si4+ doped ZnO: a probable new moisture resistant Transparent Conductive Oxide
Authors:
Tulika Srivastava,
Aswin Sadanandan,
Gaurav Bajpai,
Saurabh Tiwari,
Ruhul Amin,
Mohd. Nasir,
Sunil Kumar,
Parasharam M. Shirage,
Sajal Biring,
Somaditya Sen
Abstract:
Si doped ZnO has been reported to be a better conductor than pure ZnO. It is reported that carrier density increases and hence conductivity increases. However, the effect on optical transmission is yet not clear until our recent report [1]. Zn1-xSixO for x= 0, 0.013, 0.020 and 0.027 have been synthesized using sol-gel method (a citric acid-glycerol route) followed by solid state sintering. We foun…
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Si doped ZnO has been reported to be a better conductor than pure ZnO. It is reported that carrier density increases and hence conductivity increases. However, the effect on optical transmission is yet not clear until our recent report [1]. Zn1-xSixO for x= 0, 0.013, 0.020 and 0.027 have been synthesized using sol-gel method (a citric acid-glycerol route) followed by solid state sintering. We found that there is a decrease in defect states due to Si doping. The correlation of strain to the decrement in vacancy sites is discussed in this report. In modern electronics and solar cell fabrication, transparent conductive oxides (TCOs) are important components which conduct electrically without absorbing visible light. Known TCOs are extremely costly and are composed of non-abundant elements. Search for new ecofriendly, cheap and sustainable TCOs has been a recent research of attraction. Keeping in mind that most solar cells are exposed to natural conditions, the humidity tolerance becomes a determining factor. We report that sensitivity to moisture decreases drastically while the conductivity and optical transparency increases with doping. The reduction of strain and improvement of transport properties results in increased conductivity of Si doped ZnO pellets, tempting us to envisage this material as a probable alternate TCO.
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Submitted 9 November, 2016;
originally announced November 2016.
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High performance sensors based on resistance fluctuations of single layer graphene transistors
Authors:
Kazi Rafsanjani Amin,
Aveek Bid
Abstract:
One of the most interesting predicted applications of graphene monolayer based devices is as high quality sensors. In this letter we show, through systematic experiments, a chemical vapor sensor based on the measurement of low frequency resistance fluctuations of single layer graphene field-effect-transistor (SLG-FET) devices. The sensor has extremely high sensitivity, very high specificity, high…
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One of the most interesting predicted applications of graphene monolayer based devices is as high quality sensors. In this letter we show, through systematic experiments, a chemical vapor sensor based on the measurement of low frequency resistance fluctuations of single layer graphene field-effect-transistor (SLG-FET) devices. The sensor has extremely high sensitivity, very high specificity, high fidelity and fast response times. The performance of the device using this scheme of measurement (which uses resistance fluctuations as the detection parameter) is more than two orders of magnitude better than a detection scheme where changes in the average value of the resistance is monitored. We propose a number-density fluctuation based model to explain the superior characteristics of noise measurement based detection scheme presented in this article.
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Submitted 19 November, 2015;
originally announced November 2015.
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Role of different scattering mechanisms on the temperature dependence of transport in graphene
Authors:
Suman Sarkar,
Kazi Rafsanjani Amin,
Ranjan Modak,
Amandeep Singh,
Subroto Mukerjee,
Aveek Bid
Abstract:
Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering. On the other hand, for the low mobility devices transport propert…
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Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the transport properties are mainly governed by completely screened short range impurity scattering. On the other hand, for the low mobility devices transport properties are determined by both types of scattering potentials - long range due to ionized impurities and short range due to completely screened charged impurities. The results could be explained in the framework of Boltzmann transport equations involving the two independent scattering mechanisms.
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Submitted 28 October, 2015;
originally announced October 2015.
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Effect of ambient on the resistance fluctuations of graphene
Authors:
Kazi Rafsanjani Amin,
Aveek Bid
Abstract:
In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The shape of the power spectral density of noise was found to be determined by the energetics of the adsorption-desorption of molecules from the graphene surface mak…
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In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The shape of the power spectral density of noise was found to be determined by the energetics of the adsorption-desorption of molecules from the graphene surface making it the dominant source of noise in these devices. We also demonstrate a method of quantitatively determining the adsorption energies of chemicals on graphene surface based on noise measurements. We find that the magnitude of noise is extremely sensitive to the nature and amount of the chemical species present. We propose that a chemical sensor based on the measurement of low frequency resistance fluctuations of single layer graphene field effect transistor devices will have extremely high sensitivity, very high specificity, high fidelity and fast response times.
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Submitted 28 October, 2015;
originally announced October 2015.
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Robust local and non-local transport in the Topological Kondo Insulator SmB$_{6}$ in the presence of high magnetic field
Authors:
Sangram Biswas,
Ramya Nagarajan,
Suman Sarkar,
Kazi Rafsanjani Amin,
M. Ciomaga Hatnean,
S. Tewari,
G. Balakrishnan,
Aveek Bid
Abstract:
SmB$_6$ has been predicted to be a Kondo Topological Insulator with topologically protected conducting surface states. We have studied quantitatively the electrical transport through surface states in high quality single crystals of SmB$_6$. We observe a large non-local surface signal at temperatures lower than the bulk Kondo gap scale. Measurements and finite element simulations allow us to disti…
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SmB$_6$ has been predicted to be a Kondo Topological Insulator with topologically protected conducting surface states. We have studied quantitatively the electrical transport through surface states in high quality single crystals of SmB$_6$. We observe a large non-local surface signal at temperatures lower than the bulk Kondo gap scale. Measurements and finite element simulations allow us to distinguish unambiguously between the contributions from different transport channels. In contrast to general expectations, the electrical transport properties of the surface channels was found to be insensitive to high magnetic fields. Local and non-local magnetoresistance measurements allowed us to identify definite signatures of helical spin states and strong inter-band scattering at the surface.
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Submitted 11 February, 2015;
originally announced February 2015.
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Probing long-range correlations in the Berezinskii-Kosterlitz-Thouless fluctuation regime of ultra-thin NbN superconducting films using transport noise measurements
Authors:
R. Koushik,
Siddhartha Kumar,
Kazi Rafsanjani Amin,
Mintu Mondal,
John Jesudasan,
Aveek Bid,
Pratap Raychaudhuri,
Arindam Ghosh
Abstract:
We probe the presence of long-range correlations in phase fluctuations by analyzing the higher-order spectrum of resistance fluctuations in ultra-thin NbN superconducting films. The non-Gaussian component of resistance fluctuations is found to be sensitive to film thickness close to the transition, which allows us to distinguish between mean field and Berezinskii-Kosterlitz-Thouless (BKT) type sup…
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We probe the presence of long-range correlations in phase fluctuations by analyzing the higher-order spectrum of resistance fluctuations in ultra-thin NbN superconducting films. The non-Gaussian component of resistance fluctuations is found to be sensitive to film thickness close to the transition, which allows us to distinguish between mean field and Berezinskii-Kosterlitz-Thouless (BKT) type superconducting transitions. The extent of non-Gaussianity was found to be bounded by the BKT and mean field transition temperatures and depend strongly on the roughness and structural inhomogeneity of the superconducting films. Our experiment outlines a novel fluctuation-based kinetic probe in detecting the nature of superconductivity in disordered low-dimensional materials.
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Submitted 24 August, 2013; v1 submitted 20 August, 2013;
originally announced August 2013.
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Artificial DNA Lattice Fabrication by Non-Complementarity and Geometrical Incompatibility
Authors:
Jihoon Shin,
Junghoon Kim,
Rashid Amin,
Seungjae Kim,
Young Hun Kwon,
Sung Ha Park
Abstract:
Fabrication of DNA nanostructures primarily follows two fundamental rules. First, DNA oligonucleotides mutually combine by Watson-Crick base pairing rules between complementary base sequences. Second, the geometrical compatibility of the DNA oligonucleotide must match for lattices to form. Here we present a fabrication scheme of DNA nanostructures with non-complementary and/or geometrically incomp…
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Fabrication of DNA nanostructures primarily follows two fundamental rules. First, DNA oligonucleotides mutually combine by Watson-Crick base pairing rules between complementary base sequences. Second, the geometrical compatibility of the DNA oligonucleotide must match for lattices to form. Here we present a fabrication scheme of DNA nanostructures with non-complementary and/or geometrically incompatible DNA oligonucleotides, which contradicts conventional DNA structure creation rules. Quantitative analyses of DNA lattice sizes were carried out to verify the unfavorable binding occurrences which correspond to errors in algorithmic self-assembly. Further studies of these types of bindings may shed more light on the exact mechanisms at work in the self-assembly of DNA nanostructures.
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Submitted 30 May, 2011;
originally announced May 2011.
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Intrinsic DNA Curvature of Double-Crossover Tiles
Authors:
Seungjae Kim,
Junghoon Kim,
Pengfei Qian,
Jihoon Shin,
Rashid Amin,
Sang Jung Ahn,
Thomas H. LaBean,
Moon Ki Kim,
Sung Ha Park
Abstract:
A theoretical model which takes into account the structural distortion of double-crossover DNA tiles has been studied to investigate its effect on lattice formation sizes. It has been found that a single vector appropriately describes the curvature of the tiles, of which a higher magnitude hinders lattice growth. In conjunction with these calculations, normal mode analysis reveals that tiles with…
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A theoretical model which takes into account the structural distortion of double-crossover DNA tiles has been studied to investigate its effect on lattice formation sizes. It has been found that a single vector appropriately describes the curvature of the tiles, of which a higher magnitude hinders lattice growth. In conjunction with these calculations, normal mode analysis reveals that tiles with relative higher frequencies have an analogous effect. All the theoretical results are shown to be in good agreement with experimental data.
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Submitted 11 May, 2011;
originally announced May 2011.
