Showing 1–29 of 29 results for author: Balasubramanian, T

Giant Strain Response of Charge Modulation and Singularity in a Kagome Superconductor

Authors: Chun Lin, Armando Consiglio, Ola Kenji Forslund, Julia Kuspert, M. Michael Denner, Hechang Lei, Alex Louat, Matthew D. Watson, Timur K. Kim, Cephise Cacho, Dina Carbone, Mats Leandersson, Craig Polley, Thiagarajan Balasubramanian, Domenico Di Sante, Ronny Thomale, Zurab Guguchia, Giorgio Sangiovanni, Titus Neupert, Johan Chang

Abstract: Tunable quantum materials hold great potential for applications. Of special interest are materials in which small lattice strain induces giant electronic responses. The kagome compounds AV3Sb5 (A = K, Rb, Cs) provide a testbed for such singular electronic states. In this study, through angle-resolved photoemission spectroscopy, we provide comprehensive spectroscopic measurements of the giant respo… ▽ More Tunable quantum materials hold great potential for applications. Of special interest are materials in which small lattice strain induces giant electronic responses. The kagome compounds AV3Sb5 (A = K, Rb, Cs) provide a testbed for such singular electronic states. In this study, through angle-resolved photoemission spectroscopy, we provide comprehensive spectroscopic measurements of the giant responses induced by compressive and tensile strains on the charge-density-wave (CDW) order parameter and high-order van Hove singularity (HO-VHS) in CsV3Sb5. We observe a tripling of the CDW gap magnitudes with ~1% strain, accompanied by the changes of both energy and mass of the saddle-point fermions. Our results reveal an anticorrelation between the unconventional CDW order parameter and the mass of a HO-VHS, and highlight the role of the latter in the superconducting pairing. The giant electronic responses uncover a rich strain tunability of the versatile kagome system in studying quantum interplays under lattice perturbations. △ Less

Submitted 25 February, 2024; originally announced February 2024.

Current driven insulator-to-metal transition without Mott breakdown in Ca$_2$RuO$_4$

Authors: Davide Curcio, Charlotte E. Sanders, Alla Chikina, Henriette E. Lund, Marco Bianchi, Veronica Granata, Marco Cannavacciuolo, Giuseppe Cuono, Carmine Autieri, Filomena Forte, Alfonso Romano, Mario Cuoco, Pavel Dudin, Jose Avila, Craig Polley, Thiagarajan Balasubramanian, Rosalba Fittipaldi, Antonio Vecchione, Philip Hofmann

Abstract: The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott insulators such as Ca$_2$RuO$_4$, where an insulator-to-metal transition (IMT) can be induced by a weak electric field or current. This phenomenon has numerous potenti… ▽ More The electrical control of a material's conductivity is at the heart of modern electronics. Conventionally, this control is achieved by tuning the density of mobile charge carriers. A completely different approach is possible in Mott insulators such as Ca$_2$RuO$_4$, where an insulator-to-metal transition (IMT) can be induced by a weak electric field or current. This phenomenon has numerous potential applications in, e.g., neuromorphic computing. While the driving force of the IMT is poorly understood, it has been thought to be a breakdown of the Mott state. Using in operando angle-resolved photoemission spectroscopy, we show that this is not the case: The current-driven conductive phase arises with only a minor reorganisation of the Mott state. This can be explained by the co-existence of structurally different domains that emerge during the IMT. Electronic structure calculations show that the boundaries between domains of slightly different structure lead to a drastic reduction of the overall gap. This permits an increased conductivity, despite the persistent presence of the Mott state. This mechanism represents a paradigm shift in the understanding of IMTs, because it does not rely on the simultaneous presence of a metallic and an insulating phase, but rather on the combined effect of structurally inhomogeneous Mott phases. △ Less

Submitted 1 March, 2023; originally announced March 2023.

Comments: 12 pages, 14 figures

Bottom-up growth of monolayer honeycomb SiC

Authors: C. M. Polley, H. Fedderwitz, T. Balasubramanian, A. A. Zakharov, R. Yakimova, O. Bäcke, J. Ekman, S. P. Dash, S. Kubatkin, S. Lara-Avila

Abstract: The long theorized two-dimensional allotrope of SiC has remained elusive amid the exploration of graphenelike honeycomb structured monolayers. It is anticipated to possess a large direct band gap (2.5 eV), ambient stability, and chemical versatility. While $sp^{2}$ bonding between silicon and carbon is energetically favorable, only disordered nanoflakes have been reported to date. Here we demonstr… ▽ More The long theorized two-dimensional allotrope of SiC has remained elusive amid the exploration of graphenelike honeycomb structured monolayers. It is anticipated to possess a large direct band gap (2.5 eV), ambient stability, and chemical versatility. While $sp^{2}$ bonding between silicon and carbon is energetically favorable, only disordered nanoflakes have been reported to date. Here we demonstrate large-area, bottom-up synthesis of monocrystalline, epitaxial monolayer honeycomb SiC atop ultrathin transition metal carbide films on SiC substrates. We find the 2D phase of SiC to be almost planar and stable at high temperatures, up to 1200°C in vacuum. Interactions between the 2D-SiC and the transition metal carbide surface result in a Dirac-like feature in the electronic band structure, which in the case of a TaC substrate is strongly spin-split. Our findings represent the first step towards routine and tailored synthesis of 2D-SiC monolayers, and this novel heteroepitaxial system may find diverse applications ranging from photovoltaics to topological superconductivity. △ Less

Submitted 16 January, 2023; originally announced January 2023.

Electronically driven spin-reorientation transition of the correlated polar metal Ca$_3$Ru$_2$O$_7$

Authors: I. Marković, M. D. Watson, O. J. Clark, F. Mazzola, E. Abarca Morales, C. A. Hooley, H. Rosner, C. M. Polley, T. Balasubramanian, S. Mukherjee, N. Kikugawa, D. A. Sokolov, A. P. Mackenzie, P. D. C. King

Abstract: Polar distortions in solids give rise to the well-known functionality of switchable macroscopic polarisation in ferroelectrics and, when combined with strong spin-orbit coupling, can mediate giant spin splittings of electronic states. While typically found in insulators, ferroelectric-like distortions can remain robust against increasing itineracy, giving rise to so-called "polar metals". Here, we… ▽ More Polar distortions in solids give rise to the well-known functionality of switchable macroscopic polarisation in ferroelectrics and, when combined with strong spin-orbit coupling, can mediate giant spin splittings of electronic states. While typically found in insulators, ferroelectric-like distortions can remain robust against increasing itineracy, giving rise to so-called "polar metals". Here, we investigate the temperature-dependent electronic structure of Ca$_3$Ru$_2$O$_7$, a correlated oxide metal in which octahedral tilts and rotations combine to mediate pronounced polar distortions. Our angle-resolved photoemission measurements reveal the destruction of a large hole-like Fermi surface upon cooling through a coupled structural and spin-reorientation transition at 48 K, accompanied by a sudden onset of quasiparticle coherence. We demonstrate how these result from band hybridisation mediated by a hidden Rashba-type spin-orbit coupling. This is enabled by the bulk structural distortions and unlocked when the spin reorients perpendicular to the local symmetry-breaking potential at the Ru sites. We argue that the electronic energy gain associated with the band hybridisation is actually the key driver for the phase transition, reflecting a delicate interplay between spin-orbit coupling and strong electronic correlations, and revealing a new route to control magnetic ordering in solids. △ Less

Submitted 26 January, 2020; originally announced January 2020.

Comments: Contains 6+5 pages, including supplementary information

The Sub-band Structure of Atomically Sharp Dopant Profiles in Silicon

Authors: Federico Mazzola, Chin-Yi Chen, Rajib Rahman, Xie-Gang Zhu, Craig M. Polley, Thiagarajan Balasubramanian, Phil D. C. King, Philip Hofmann, Jill A. Miwa, Justin W. Wells

Abstract: The downscaling of silicon-based structures and proto-devices has now reached the single atom scale, representing an important milestone for the development of a silicon-based quantum computer. One especially notable platform for atomic scale device fabrication is the so-called SiP delta-layer, consisting of an ultra dense and sharp layer of dopants within a semiconductor host. Whilst several alte… ▽ More The downscaling of silicon-based structures and proto-devices has now reached the single atom scale, representing an important milestone for the development of a silicon-based quantum computer. One especially notable platform for atomic scale device fabrication is the so-called SiP delta-layer, consisting of an ultra dense and sharp layer of dopants within a semiconductor host. Whilst several alternatives exist, phosphorus dopants in silicon have drawn the most interest, and it is on this platform that many quantum proto-devices have been successfully demonstrated. Motivated by this, both calculations and experiments have been dedicated to understanding the electronic structure of the SiP delta-layer platform. In this work, we use high resolution angle-resolved photoemission spectroscopy (ARPES) to reveal the structure of the electronic states which exist because of the high dopant density of the SiP delta-layer. In contrast to published theoretical work, we resolve three distinct bands, the most occupied of which shows a large anisotropy and significant deviation from simple parabolic behaviour. We investigate the possible origins of this fine structure, and conclude that it is primarily a consequence of the dielectric constant being large (ca. double that of bulk Si). Incorporating this factor into tight binding calculations leads to a major revision of band structure; specifically, the existence of a third band, the separation of the bands, and the departure from purely parabolic behaviour. This new understanding of the bandstructure has important implications for quantum proto-devices which are built on the SiP delta-layer platform. △ Less

Submitted 24 April, 2019; originally announced April 2019.

Comments: 6 pages, 3 figures

Phonon-induced linewidths of graphene electronic states

Authors: B. Hellsing, T. Frederiksen, F. Mazzola, T. Balasubramanian, J. Wells

Abstract: The linewidths of the electronic bands originating from the electron-phonon coupling in graphene are analyzed based on model tight-binding calculations and experimental angle-resolved photoemission spectroscopy (ARPES) data. Our calculations confirm the prediction that the high-energy optical phonons provide the most essential contribution to the phonon-induced linewidth of the two upper occupied… ▽ More The linewidths of the electronic bands originating from the electron-phonon coupling in graphene are analyzed based on model tight-binding calculations and experimental angle-resolved photoemission spectroscopy (ARPES) data. Our calculations confirm the prediction that the high-energy optical phonons provide the most essential contribution to the phonon-induced linewidth of the two upper occupied $σ$ bands near the $\barΓ$-point. For larger binding energies of these bands, as well as for the $π$ band, we find evidence for a substantial lifetime broadening from interband scattering $π\rightarrow σ$ and $σ\rightarrow π$, respectively, driven by the out-of-plane ZA acoustic phonons. The essential features of the calculated $σ$ band linewidths are in agreement with recent published ARPES data [F. Mazzola et al., Phys.~Rev.~B. 95, 075430 (2017)] and of the $π$ band linewidth with ARPES data presented here. △ Less

Submitted 26 August, 2018; originally announced August 2018.

Comments: 7 pages, 4 figures

Journal ref: Phys. Rev. B 98, 205428 (2018)

Bi monocrystal formation on InAs(111)A and B substrates

Authors: L. Nicolaï, J. -M. Mariot, U. Djukic, W. Wang, O. Heckmann, M. C. Richter, J. Kanski, M. Leandersson, J. Sadowski, T. Balasubramanian, I. Vobornik, J. Fujii, J. Braun, H. Ebert, J. Minár, K. Hricovini

Abstract: The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi gro… ▽ More The growth of Bi films deposited on both A and B faces of InAs(111) has been investigated by low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d5/2 photoelectron signals allow to get a comprehensive picture of the Bi/InAs(1 1 1) interface. From the initial stages the Bi growth on the A face (In-terminated InAs) is epitaxial, contrary to that on the B face (As- terminated InAs) that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a $\approx 10$~BL deposit on the A face is identical to that of bulk Bi, while more than $\approx 30$ BL are needed for the B face. Both bulk and surface states are well accounted for by fully relativistic ab initio spin-resolved photoemission calculations. △ Less

Submitted 1 July, 2018; originally announced July 2018.

Comments: 7 pages, 7 figures

Fragility of the Dirac Cone Splitting in Topological Crystalline Insulator Heterostructures

Authors: Craig M. Polley, Ryszard Buczko, Alexander Forsman, Piotr Dziawa, Andrzej Szczerbakow, Rafał Rechciński, Bogdan J. Kowalski, Tomasz Story, Małgorzata Trzyna, Marco Bianchi, Antonija Grubišić Čabo, Philip Hofmann, Oscar Tjernberg, Thiagarajan Balasubramanian

Abstract: The 'double Dirac cone' 2D topological interface states found on the (001) faces of topological crystalline insulators such as Pb$_{1-x}$Sn$_{x}$Se feature degeneracies located away from time reversal invariant momenta, and are a manifestation of both mirror symmetry protection and valley interactions. Similar shifted degeneracies in 1D interface states have been highlighted as a potential basis f… ▽ More The 'double Dirac cone' 2D topological interface states found on the (001) faces of topological crystalline insulators such as Pb$_{1-x}$Sn$_{x}$Se feature degeneracies located away from time reversal invariant momenta, and are a manifestation of both mirror symmetry protection and valley interactions. Similar shifted degeneracies in 1D interface states have been highlighted as a potential basis for a topological transistor, but realizing such a device will require a detailed understanding of the intervalley physics involved. In addition, the operation of this or similar devices outside of ultra-high vacuum will require encapsulation, and the consequences of this for the topological interface state must be understood. Here we address both topics for the case of 2D surface states using angle-resolved photoemission spectroscopy. We examine bulk Pb$_{1-x}$Sn$_{x}$Se(001) crystals overgrown with PbSe, realizing trivial/topological heterostructures. We demonstrate that the valley interaction that splits the two Dirac cones at each $\bar{X}$ is extremely sensitive to atomic-scale details of the surface, exhibiting non-monotonic changes as PbSe deposition proceeds. This includes an apparent total collapse of the splitting for sub-monolayer coverage, eliminating the Lifshitz transition. For a large overlayer thickness we observe quantized PbSe states, possibly reflecting a symmetry confinement mechanism at the buried topological interface. △ Less

Submitted 21 December, 2017; originally announced December 2017.

Ubiquitous formation of bulk Dirac cones and topological surface states from a single orbital manifold in transition-metal dichalcogenides

Authors: M. S. Bahramy, O. J. Clark, B. -J. Yang, J. Feng, L. Bawden, J. M. Riley, I. Marković, F. Mazzola, V. Sunko, D. Biswas, S. P. Cooil, M. Jorge, J. W. Wells, M. Leandersson, T. Balasubramanian, J. Fujii, I. Vobornik, J. E. Rault, T. K. Kim, M. Hoesch, K. Okawa, M. Asakawa, T. Sasagawa, T. Eknapakul, W. Meevasana , et al. (1 additional authors not shown)

Abstract: Transition-metal dichalcogenides (TMDs) are renowned for their rich and varied properties. They range from metals and superconductors to strongly spin-orbit-coupled semiconductors and charge-density-wave systems, with their single-layer variants one of the most prominent current examples of two-dimensional materials beyond graphene. Their varied ground states largely depend on the transition metal… ▽ More Transition-metal dichalcogenides (TMDs) are renowned for their rich and varied properties. They range from metals and superconductors to strongly spin-orbit-coupled semiconductors and charge-density-wave systems, with their single-layer variants one of the most prominent current examples of two-dimensional materials beyond graphene. Their varied ground states largely depend on the transition metal d-electron-derived electronic states, on which the vast majority of attention has been concentrated to date. Here, we focus on the chalcogen-derived states. From density-functional theory calculations together with spin- and angle- resolved photoemission, we find that these generically host type-II three-dimensional bulk Dirac fermions as well as ladders of topological surface states and surface resonances. We demonstrate how these naturally arise within a single p-orbital manifold as a general consequence of a trigonal crystal field, and as such can be expected across a large number of compounds. Already, we demonstrate their existence in six separate TMDs, opening routes to tune, and ultimately exploit, their topological physics. △ Less

Submitted 19 July, 2018; v1 submitted 27 February, 2017; originally announced February 2017.

Comments: 10 pages, 4 figures

Journal ref: Nature Materials 17, 21-28 (2018) (DOI 10.1038/nmat5031)

Strong electron-phonon coupling in the sigma band of graphene

Authors: Federico Mazzola, Thomas Frederiksen, Thiagarajan Balasubramanian, Philip Hofmann, Bo Hellsing, Justin W. Wells

Abstract: First-principles studies of the electron-phonon coupling in graphene predict a high coupling strength for the $σ$ band with $λ$ values of up to 0.9. Near the top of the $σ$ band, $λ$ is found to be $\approx 0.7$. This value is consistent with the recently observed kinks in the $σ$ band dispersion by angle-resolved photoemission. While the photoemission intensity from the $σ$ band is strongly influ… ▽ More First-principles studies of the electron-phonon coupling in graphene predict a high coupling strength for the $σ$ band with $λ$ values of up to 0.9. Near the top of the $σ$ band, $λ$ is found to be $\approx 0.7$. This value is consistent with the recently observed kinks in the $σ$ band dispersion by angle-resolved photoemission. While the photoemission intensity from the $σ$ band is strongly influenced by matrix elements due to sub-lattice interference, these effects differ significantly for data taken in the first and neighboring Brillouin zones. This can be exploited to disentangle the influence of matrix elements and electron-phonon coupling. A rigorous analysis of the experimentally determined complex self-energy using Kramers-Kronig transformations further supports the assignment of the observed kinks to strong electron-phonon coupling and yields a coupling constant of $0.6(1)$, in excellent agreement with the calculations. △ Less

Submitted 4 July, 2016; originally announced July 2016.

Comments: 11 pages, 3 figures

Journal ref: Phys. Rev. B 95, 075430 (2017)

Spin-valley locking in the normal state of a transition-metal dichalocogenide superconductor

Authors: L. Bawden, S. P. Cooil, F. Mazzola, J. M. Riley, L. J. Collins-McIntyre, V. Sunko, K. Hunvik, M. Leandersson, C. M. Polley, T. Balasubramanian, T. K. Kim, M. Hoesch, J. W. Wells, G. Balakrishnan, M. S. Bahramy, P. D. C. King

Abstract: The metallic transition-metal dichalcogenides (TMDCs) are benchmark systems for studying and controlling intertwined electronic orders in solids, with superconductivity developing upon cooling from a charge density wave state. The interplay between such phases is thought to play a critical role in the unconventional superconductivity of cuprates, Fe-based, and heavy-fermion systems, yet even for t… ▽ More The metallic transition-metal dichalcogenides (TMDCs) are benchmark systems for studying and controlling intertwined electronic orders in solids, with superconductivity developing upon cooling from a charge density wave state. The interplay between such phases is thought to play a critical role in the unconventional superconductivity of cuprates, Fe-based, and heavy-fermion systems, yet even for the more moderately-correlated TMDCs, their nature and origins have proved highly controversial. Here, we study a prototypical example, $2H$-NbSe$_2$, by spin- and angle-resolved photoemission and first-principles theory. We find that the normal state, from which its hallmark collective phases emerge, is characterised by quasiparticles whose spin is locked to their valley pseudospin. This results from a combination of strong spin-orbit interactions and local inversion symmetry breaking. Non-negligible interlayer coupling further drives a rich three-dimensional momentum-dependence of the underlying Fermi surface spin texture. Together, these findings necessitate a fundamental re-investigation of the nature of charge order and superconducting pairing in NbSe$_2$ and related TMDCs. △ Less

Submitted 16 March, 2016; originally announced March 2016.

Comments: 7 pages, 4 figures

Journal ref: Nature Communications 7, 11711 (2016)

Observation of a topologically non-trivial surface state in half-Heusler PtLuSb (001) thin films

Authors: J. A. Logan, S. J. Patel, S. D. Harrington, C. M. Polley, B. D. Schultz, T. Balasubramanian, A. Janotti, A. Mikkelsen, C. J. Palmstrøm

Abstract: The discovery of topological insulators (TIs), materials with bulk band gaps and protected cross-gap surface states, in compounds such as Bi2Se3 has generated much interest in identifying topological surface states (TSSs) in other classes of materials. In particular, recent theory calculations suggest that TSSs may be found in half-Heusler ternary compounds. If experimentally realizable, this woul… ▽ More The discovery of topological insulators (TIs), materials with bulk band gaps and protected cross-gap surface states, in compounds such as Bi2Se3 has generated much interest in identifying topological surface states (TSSs) in other classes of materials. In particular, recent theory calculations suggest that TSSs may be found in half-Heusler ternary compounds. If experimentally realizable, this would provide a materials platform for entirely new heterostructure spintronic devices that make use of the structurally-identical but electronically-varied nature of Heusler compounds. Here, we show the presence of a TSS in epitaxially grown thin films of the half-Heusler compound PtLuSb. Spin and angle-resolved photoemission spectroscopy (ARPES), complemented by theoretical calculations, reveals a surface state with linear dispersion and a helical tangential spin texture consistent with previous predictions. This experimental verification of TI behavior is a significant step forward in establishing half-Heusler compounds as a viable material system for future spintronics devices. △ Less

Submitted 18 November, 2015; v1 submitted 15 November, 2015; originally announced November 2015.

Comments: 12 pages (8 main, 4 supplemental), 9 figures (5 main, 4 supplemental), V2 updated reference, V3 updated abbreviation

Journal ref: Nature Communications, Volume 7, 27 June 2016, Article 11993

Observation of surface states on heavily indium doped SnTe(111), a superconducting topological crystalline insulator

Authors: C. M. Polley, V. Jovic, T. -Y. Su, M. Saghir, D. Newby Jr., B. Kowalski, R. Jakiela, A. Barcz, M. Guziewicz, T. Balasubramanian, G. Balakrishnan, J. Laverock, K. E. Smith

Abstract: The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here we present the growth, characterization and angle resolved photoemission spectroscopy analysis of samples with much heavier In doping (up to $x\approx0.4$), a… ▽ More The topological crystalline insulator tin telluride is known to host superconductivity when doped with indium (Sn$_{1-x}$In$_{x}$Te), and for low indium contents ($x=0.04$) it is known that the topological surface states are preserved. Here we present the growth, characterization and angle resolved photoemission spectroscopy analysis of samples with much heavier In doping (up to $x\approx0.4$), a regime where the superconducting temperature is increased nearly fourfold. We demonstrate that despite strong p-type doping, Dirac-like surface states persist. △ Less

Submitted 18 February, 2016; v1 submitted 16 August, 2015; originally announced August 2015.

Journal ref: Phys. Rev. B 93, 075132 (2016)

Strong Linear Dichroism in Spin-Polarized Photoemission from Spin-Orbit-Coupled Surface States

Authors: Hendrik Bentmann, Henriette Maaß, Eugene E. Krasovskii, Thiago R. F. Peixoto, Christoph Seibel, Mats Leandersson, Thiagarajan Balasubramanian, Friedrich Reinert

Abstract: A comprehensive understanding of spin-polarized photoemission is crucial for accessing the electronic structure of spin-orbit coupled materials. Yet, the impact of the final state in the photoemission process on the photoelectron spin has been difficult to assess in these systems. We present experiments for the spin-orbit split states in a Bi-Ag surface alloy showing that the alteration of the fin… ▽ More A comprehensive understanding of spin-polarized photoemission is crucial for accessing the electronic structure of spin-orbit coupled materials. Yet, the impact of the final state in the photoemission process on the photoelectron spin has been difficult to assess in these systems. We present experiments for the spin-orbit split states in a Bi-Ag surface alloy showing that the alteration of the final state with energy may cause a complete reversal of the photoelectron spin polarization. We explain the effect on the basis of ab initio one-step photoemission theory and describe how it originates from linear dichroism in the angular distribution of photoelectrons. Our analysis shows that the modulated photoelectron spin polarization reflects the intrinsic spin density of the surface state being sampled differently depending on the final state, and it indicates linear dichroism as a natural probe of spin-orbit coupling at surfaces. △ Less

Submitted 17 July, 2017; v1 submitted 16 July, 2015; originally announced July 2015.

Comments: New manuscript with a changed interpretation and theoretical description of the experimental results

Journal ref: Phys. Rev. Lett. 119, 106401 (2017)

One-dimensional spin texture of Bi(441); Quantum Spin Hall properties without a topological insulator

Authors: M. Bianchi, F. Song, S. Cooil, A. F. Monsen, E. Wahlstrom, J. A. Miwa, E. D. L. Rienks, D. A. Evans, A. Strozecka, J. I. Pascual, M. Leandersson, T. Balasubramanian, Ph. Hofmann, J. W. Wells

Abstract: The high index (441) surface of bismuth has been studied using Scanning Tunnelling Microscopy (STM), Angle Resolved Photoemission Spectroscopy (APRES) and spin-resolved ARPES. The surface is strongly corrugated, exposing a regular array of (110)-like terraces. Two surface localised states are observed, both of which are linearly dispersing in one in-plane direction ($k_x$), and dispersionless in t… ▽ More The high index (441) surface of bismuth has been studied using Scanning Tunnelling Microscopy (STM), Angle Resolved Photoemission Spectroscopy (APRES) and spin-resolved ARPES. The surface is strongly corrugated, exposing a regular array of (110)-like terraces. Two surface localised states are observed, both of which are linearly dispersing in one in-plane direction ($k_x$), and dispersionless in the orthogonal in-plane direction ($k_y$), and both of which have a Dirac-like crossing at $k_x$=0. Spin ARPES reveals a strong in-plane polarisation, consistent with Rashba-like spin-orbit coupling. One state has a strong out-of-plane spin component, which matches with the miscut angle, suggesting its {possible} origin as an edge-state. The electronic structure of Bi(441) has significant similarities with topological insulator surface states and is expected to support one dimensional Quantum Spin Hall-like coupled spin-charge transport properties with inhibited backscattering, without requiring a topological insulator bulk. △ Less

Submitted 26 June, 2015; originally announced June 2015.

Journal ref: Physical Review B 91 (16), 165307, 2015

Lifshitz transition and van Hove singularity in a Topological Dirac Semimetal

Authors: Su-Yang Xu, Chang Liu, I. Belopolski, S. K. Kushwaha, R. Sankar, J. W. Krizan, T. -R. Chang, C. M. Polley, J. Adell, T. Balasubramanian, K. Miyamoto, N. Alidoust, Guang Bian, M. Neupane, H. -T. Jeng, C. -Y. Huang, W. -F. Tsai, T. Okuda, F. C. Chou, R. J. Cava, Arun Bansil, Hsin Lin, M. Zahid Hasan

Abstract: A topological Dirac semimetal is a novel state of quantum matter which has recently attracted much attention as an apparent 3D version of graphene. In this paper, we report critically important results on the electronic structure of the 3D Dirac semimetal Na3Bi at a surface that reveals its nontrivial groundstate. Our studies, for the first time, reveal that the two 3D Dirac cones go through a top… ▽ More A topological Dirac semimetal is a novel state of quantum matter which has recently attracted much attention as an apparent 3D version of graphene. In this paper, we report critically important results on the electronic structure of the 3D Dirac semimetal Na3Bi at a surface that reveals its nontrivial groundstate. Our studies, for the first time, reveal that the two 3D Dirac cones go through a topological change in the constant energy contour as a function of the binding energy, featuring a Lifshitz point, which is missing in a strict 3D analog of graphene (in other words Na3Bi is not a true 3D analog of graphene). Our results identify the first example of a band saddle point singularity in 3D Dirac materials. This is in contrast to its 2D analogs such as graphene and the helical Dirac surface states of a topological insulator. The observation of multiple Dirac nodes in Na3Bi connecting via a Lifshitz point along its crystalline rotational axis away from the Kramers point serves as a decisive signature for the symmetry-protected nature of the Dirac semimetal's topological groundstate. △ Less

Submitted 10 March, 2015; v1 submitted 24 February, 2015; originally announced February 2015.

Comments: 5 pages, 4 Figures, Related papers on topological Fermi arcs and Weyl Semimetals (WSMs) are at http://physics.princeton.edu/zahidhasangroup/index.html

Journal ref: Phys. Rev. B 92, 075115 (2015)

Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor

Authors: J. M. Riley, F. Mazzola, M. Dendzik, M. Michiardi, T. Takayama, L. Bawden, C. Granerød, M. Leandersson, T. Balasubramanian, M. Hoesch, T. K. Kim, H. Takagi, W. Meevasana, Ph. Hofmann, M. S. Bahramy, J. W. Wells, P. D. C. King

Abstract: Methods to generate spin-polarised electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global structural inversion symmetry. In contrast, here we present direct evidence from spin- and angle-resolved photoemission spectroscopy for a strong spin polarisation of b… ▽ More Methods to generate spin-polarised electronic states in non-magnetic solids are strongly desired to enable all-electrical manipulation of electron spins for new quantum devices. This is generally accepted to require breaking global structural inversion symmetry. In contrast, here we present direct evidence from spin- and angle-resolved photoemission spectroscopy for a strong spin polarisation of bulk states in the centrosymmetric transition-metal dichalcogenide WSe$_2$. We show how this arises due to a lack of inversion symmetry in constituent structural units of the bulk crystal where the electronic states are localised, leading to enormous spin splittings up to $\sim\!0.5$ eV, with a spin texture that is strongly modulated in both real and momentum space. As well as providing the first experimental evidence for a recently-predicted `hidden' spin polarisation in inversion-symmetric materials, our study sheds new light on a putative spin-valley coupling in transition-metal dichalcogenides, of key importance for using these compounds in proposed valleytronic devices. △ Less

Submitted 28 August, 2014; originally announced August 2014.

Comments: 6 pages, 4 figures

Journal ref: Nature Physics 10, 835 (2014)

Observation of Quantum-Tunneling Modulated Spin Texture in Ultrathin Topological Insulator Bi2Se3 Films

Authors: Madhab Neupane, Anthony Richardella, Jaime Sánchez-Barriga, Su-Yang Xu, Nasser Alidoust, Ilya Belopolski, Chang Liu, Guang Bian, Duming Zhang, Dmitry Marchenko, Andrei Varykhalov, Oliver Rader, Mats Leandersson, Thiagarajan Balasubramanian, Tay-Rong Chang, Horng-Tay Jeng, Susmita Basak, Hsin Lin, Arun Bansil, Nitin Samarth, M. Zahid Hasan

Abstract: Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunneling-dependent evolution of spin configuration in topological insulator thin film… ▽ More Understanding the spin-texture behavior of boundary modes in ultrathin topological insulator films is critically essential for the design and fabrication of functional nano-devices. Here by using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films, we report tunneling-dependent evolution of spin configuration in topological insulator thin films across the metal-to-insulator transition. We observe strongly binding energy- and wavevector-dependent spin polarization for the topological surface electrons in the ultra-thin gapped-Dirac-cone limit. The polarization decreases significantly with enhanced tunneling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. We present a theoretical model which captures this delicate relationship between quantum tunneling and Fermi surface spin polarization. Our high-resolution spin-based spectroscopic results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nano-device. △ Less

Submitted 10 April, 2014; originally announced April 2014.

Comments: To appear in Nature Communications (2014); Expanded version of http://arxiv.org/abs/1307.5485

Journal ref: Nature Commun. 05, 3786 (2014)

On the nature of the band inversion and the topological phase transition in (Pb,Sn)Se

Authors: B. M. Wojek, P. Dziawa, B. J. Kowalski, A. Szczerbakow, A. M. Black-Schaffer, M. H. Berntsen, T. Balasubramanian, T. Story, O. Tjernberg

Abstract: The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface states of Pb{1-x}Sn{x}Se mixed crystals by means of angle-resolved photoelectron spectroscopy in the parameter space 0 <= x <= 0.37 and 300 K >= T >= 9 K. Using the… ▽ More The recent discovery of a topological phase transition in IV-VI narrow-gap semiconductors has revitalized the decades-old interest in the bulk band inversion occurring in these materials. Here we systematically study the (001) surface states of Pb{1-x}Sn{x}Se mixed crystals by means of angle-resolved photoelectron spectroscopy in the parameter space 0 <= x <= 0.37 and 300 K >= T >= 9 K. Using the surface-state observations, we monitor directly the topological phase transition in this solid solution and gain valuable information on the evolution of the underlying fundamental band gap of the system. In contrast to common model expectations, the band-gap evolution appears to be nonlinear as a function of the studied parameters, resulting in the measuring of a discontinuous band inversion process. This finding signifies that the anticipated gapless bulk state is in fact not a stable configuration and that the topological phase transition therefore exhibits features akin to a first-order transition. △ Less

Submitted 21 September, 2014; v1 submitted 26 January, 2014; originally announced January 2014.

Comments: article + supplemental figures

Journal ref: Phys. Rev. B 90, 161202 (2014)

Observation of a bulk 3D Dirac multiplet, Lifshitz transition, and nestled spin states in Na3Bi

Authors: Su-Yang Xu, Chang Liu, S. K. Kushwaha, T. -R. Chang, J. W. Krizan, R. Sankar, C. M. Polley, J. Adell, T. Balasubramanian, K. Miyamoto, N. Alidoust, Guang Bian, M. Neupane, I. Belopolski, H. -T. Jeng, C. -Y. Huang, W. -F. Tsai, H. Lin, F. C. Chou, T. Okuda, A. Bansil, R. J. Cava, M. Z. Hasan

Abstract: Symmetry or topology protected Dirac fermion states in two and three dimensions constitute novel quantum systems that exhibit exotic physical phenomena. However, none of the studied spin-orbit materials are suitable for realizing bulk multiplet Dirac states for the exploration of interacting Dirac physics. Here we present experimental evidence, for the first time, that the compound Na3Bi hosts a b… ▽ More Symmetry or topology protected Dirac fermion states in two and three dimensions constitute novel quantum systems that exhibit exotic physical phenomena. However, none of the studied spin-orbit materials are suitable for realizing bulk multiplet Dirac states for the exploration of interacting Dirac physics. Here we present experimental evidence, for the first time, that the compound Na3Bi hosts a bulk spin-orbit Dirac multiplet and their interaction or overlap leads to a Lifshitz transition in momentum space - a condition for realizing interactions involving Dirac states. By carefully preparing the samples at a non-natural-cleavage (100) crystalline surface, we uncover many novel electronic and spin properties in Na3Bi by utilizing high resolution angle- and spin-resolved photoemission spectroscopy measurements. We observe two bulk 3D Dirac nodes that locate on the opposite sides of the bulk zone center point $Γ$, which exhibit a Fermi surface Lifshitz transition and a saddle point singularity. Furthermore, our data shows evidence for the possible existence of theoretically predicted weak 2D nontrivial spin-orbit surface state with helical spin polarization that are nestled between the two bulk Dirac cones, consistent with the theoretically calculated (100) surface-arc-modes. Our main experimental observation of a rich multiplet of Dirac structure and the Lifshitz transition opens the door for inducing electronic instabilities and correlated physical phenomena in Na3Bi, and paves the way for the engineering of novel topological states using Na3Bi predicted in recent theory. △ Less

Submitted 29 December, 2013; originally announced December 2013.

Comments: 23 pages, 5 Figures

Observation of topological crystalline insulator surface states on (111)-oriented Pb$_{1-x}$Sn$_{x}$Se films

Authors: C. M. Polley, P. Dziawa, A. Reszka, A. Szczerbakow, R. Minikayev, J. Z. Domagala, S. Safaei, P. Kacman, R. Buczko, J. Adell, M. H. Berntsen, B. M. Wojek, O. Tjernberg, B. J. Kowalski, T. Story, T. Balasubramanian

Abstract: We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion at $\barΓ$ and $\bar{M}$ in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the… ▽ More We present angle resolved photoemission spectroscopy measurements of the surface states on in-situ grown (111) oriented films of Pb$_{1-x}$Sn$_{x}$Se, a three dimensional topological crystalline insulator. We observe surface states with Dirac-like dispersion at $\barΓ$ and $\bar{M}$ in the surface Brillouin zone, supporting recent theoretical predictions for this family of materials. We study the parallel dispersion isotropy and Dirac-point binding energy of the surface states, and perform tight-binding calculations to support our findings. The relative simplicity of the growth technique is encouraging, and suggests a clear path for future investigations into the role of strain, vicinality and alternative surface orientations in (Pb,Sn)Se compounds. △ Less

Submitted 11 December, 2013; originally announced December 2013.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 89, 075317 (2014)

Tunneling Tuned Spin Modulations in Ultrathin Topological Insulator Films

Authors: M. Neupane, A. Richardella, J. Sanchez-Barriga, S. -Y. Xu, N. Alidoust, I. Belopolski, Chang Liu, G. Bian, D. M. Zhang, D. Marchenko, A. Varykhalov, O. Rader, M. Leandersson, T. Balasubramanian, T. -R. Chang, H. -T. Jeng, S. Basak, H. Lin, A. Bansil, N. Samarth, M. Z. Hasan

Abstract: Quantitative understanding of the relationship between quantum tunneling and Fermi surface spin polarization is key to device design using topological insulator surface states. By using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films across the metal-to-insulator transition, we observe that for a given film thickness, the spin polarization… ▽ More Quantitative understanding of the relationship between quantum tunneling and Fermi surface spin polarization is key to device design using topological insulator surface states. By using spin-resolved photoemission spectroscopy with p-polarized light in topological insulator Bi2Se3 thin films across the metal-to-insulator transition, we observe that for a given film thickness, the spin polarization is large for momenta far from the center of the surface Brillouin zone. In addition, the polarization decreases significantly with enhanced tunneling realized systematically in thin insulating films, whereas magnitude of the polarization saturates to the bulk limit faster at larger wavevectors in thicker metallic films. Our theoretical model calculations capture this delicate relationship between quantum tunneling and Fermi surface spin polarization. Our results suggest that the polarization current can be tuned to zero in thin insulating films forming the basis for a future spin-switch nano-device. △ Less

Submitted 20 July, 2013; originally announced July 2013.

Comments: 8 pages, 4 figures

k-resolved susceptibility function of 2H-TaSe2 from angle-resolved photoemission

Authors: J. Laverock, D. Newby Jr., E. Abreu, R. Averitt, K. E. Smith, R. P. Singh, G. Balakrishnan, J. Adell, T. Balasubramanian

Abstract: The connection between the Fermi surface and charge-density wave (CDW) order is revisited in 2H-TaSe2. Using angle-resolved photoemission spectroscopy, ab initio band structure calculations, and an accurate tight-binding model, we develop the empirical k-resolved susceptibility function, which we use to highlight states that contribute to the susceptibility for a particular q-vector. We show that… ▽ More The connection between the Fermi surface and charge-density wave (CDW) order is revisited in 2H-TaSe2. Using angle-resolved photoemission spectroscopy, ab initio band structure calculations, and an accurate tight-binding model, we develop the empirical k-resolved susceptibility function, which we use to highlight states that contribute to the susceptibility for a particular q-vector. We show that although the Fermi surface is involved in the peaks in the susceptibility associated with CDW order, it is not through conventional Fermi surface nesting, but rather through finite energy transitions from states located far from the Fermi level. Comparison with monolayer TaSe2 illustrates the different mechanisms that are involved in the absence of bilayer splitting. △ Less

Submitted 19 July, 2013; originally announced July 2013.

Journal ref: Phys. Rev. B 88, 035108 (2013)

Electron-phonon coupling-induced kinks in the sigma band of graphene

Authors: Federico Mazzola, Justin W. Wells, Rositza Yakimova, Soren Ulstrup, Jill A. Miwa, Richard Balog, Marco Bianchi, Mats Leandersson, Johan Adell, Philip Hofmann, T. Balasubramanian

Abstract: Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the sigma band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cut-off in the Fermi-Dirac distribution. They are therefore not expected for the $σ$ band of graphene that has a binding energy of more than 3.5 eV. We argue that the observed kinks are in… ▽ More Angle-resolved photoemission spectroscopy reveals pronounced kinks in the dispersion of the sigma band of graphene. Such kinks are usually caused by the combination of a strong electron-boson interaction and the cut-off in the Fermi-Dirac distribution. They are therefore not expected for the $σ$ band of graphene that has a binding energy of more than 3.5 eV. We argue that the observed kinks are indeed caused by the electron-phonon interaction, but the role of the Fermi-Dirac distribution cutoff is assumed by a cut-off in the density of $σ$ states. The existence of the effect suggests a very weak coupling of holes in the $σ$ band not only to the $π$ electrons of graphene but also to the substrate electronic states. This is confirmed by the presence of such kinks for graphene on several different substrates that all show a strong coupling constant of lambda=1. △ Less

Submitted 1 June, 2013; v1 submitted 27 May, 2013; originally announced May 2013.

Hedgehog Spin-texture and Berry's Phase tuning in a Magnetic Topological Insulator

Authors: Su-Yang Xu, Madhab Neupane, Chang Liu, Duming Zhang, Anthony Richardella, L. Andrew Wray, Nasser Alidoust, Mats Leandersson, Thiagarajan Balasubramanian, Jaime Sánchez-Barriga, Oliver Rader, Gabriel Landolt, Bartosz Slomski, Jan Hugo Dil, Jürg Osterwalder, Tay-Rong Chang, Horng-Tay Jeng, Hsin Lin, Arun Bansil, Nitin Samarth, M. Zahid Hasan

Abstract: Understanding and control of spin degrees of freedom on the surfaces of topological materials are key to future applications as well as for realizing novel physics such as the axion electrodynamics associated with time-reversal (TR) symmetry breaking on the surface. We experimentally demonstrate magnetically induced spin reorientation phenomena simultaneous with a Dirac-metal to gapped-insulator t… ▽ More Understanding and control of spin degrees of freedom on the surfaces of topological materials are key to future applications as well as for realizing novel physics such as the axion electrodynamics associated with time-reversal (TR) symmetry breaking on the surface. We experimentally demonstrate magnetically induced spin reorientation phenomena simultaneous with a Dirac-metal to gapped-insulator transition on the surfaces of manganese-doped Bi2Se3 thin films. The resulting electronic groundstate exhibits unique hedgehog-like spin textures at low energies, which directly demonstrate the mechanics of TR symmetry breaking on the surface. We further show that an insulating gap induced by quantum tunnelling between surfaces exhibits spin texture modulation at low energies but respects TR invariance. These spin phenomena and the control of their Fermi surface geometrical phase first demonstrated in our experiments pave the way for the future realization of many predicted exotic magnetic phenomena of topological origin. △ Less

Submitted 13 December, 2012; originally announced December 2012.

Comments: 38 pages, 18 Figures, Includes new text, additional datasets and interpretation beyond arXiv:1206.2090, for the final published version see Nature Physics (2012)

Journal ref: S.-Y. Xu et.al., Nature Physics 8, 616-622 (2012)

Spin-polarized (001) surface states of the topological crystalline insulator Pb_{0.73}Sn_{0.27}Se

Authors: B. M. Wojek, R. Buczko, S. Safaei, P. Dziawa, B. J. Kowalski, M. H. Berntsen, T. Balasubramanian, M. Leandersson, A. Szczerbakow, P. Kacman, T. Story, O. Tjernberg

Abstract: We study the nature of (001) surface states in Pb_{0.73}Sn_{0.27}Se in the newly discovered topological-crystalline-insulator (TCI) phase as well as the corresponding topologically trivial state above the band-gap-inversion temperature. Our calculations predict not only metallic surface states with a nontrivial chiral spin structure for the TCI case, but also nonmetallic (gapped) surface states wi… ▽ More We study the nature of (001) surface states in Pb_{0.73}Sn_{0.27}Se in the newly discovered topological-crystalline-insulator (TCI) phase as well as the corresponding topologically trivial state above the band-gap-inversion temperature. Our calculations predict not only metallic surface states with a nontrivial chiral spin structure for the TCI case, but also nonmetallic (gapped) surface states with nonzero spin polarization when the system is a normal insulator. For both phases, angle- and spin-resolved photoelectron spectroscopy measurements provide conclusive evidence for the formation of these (001) surface states in Pb_{0.73}Sn_{0.27}Se, as well as for their chiral spin structure. △ Less

Submitted 8 December, 2012; originally announced December 2012.

Comments: 6 pages, 2 figures

Journal ref: Phys. Rev. B 87, 115106 (2013)

Photoemission evidence for crossover from Peierls-like to Mott-like transition in highly strained VO$_2$

Authors: J. Laverock, A. R. H. Preston, D. Newby Jr, K. E. Smith, S. Sallis, L. F. J. Piper, S. Kittiwatanakul, J. W. Lu, S. A. Wolf, M. Leandersson, T. Balasubramanian

Abstract: We present a spectroscopic study that reveals that the metal-insulator transition of strained VO$_2$ thin films may be driven towards a purely electronic transition, which does not rely on the Peierls dimerization, by the application of mechanical strain. Comparison with a moderately strained system, which does involve the lattice, demonstrates the crossover from Peierls- to Mott-like transitions. We present a spectroscopic study that reveals that the metal-insulator transition of strained VO$_2$ thin films may be driven towards a purely electronic transition, which does not rely on the Peierls dimerization, by the application of mechanical strain. Comparison with a moderately strained system, which does involve the lattice, demonstrates the crossover from Peierls- to Mott-like transitions. △ Less

Submitted 16 November, 2012; originally announced November 2012.

Journal ref: Phys. Rev. B 86, 195124 (2012)

Magnetically induced spin reorientation on the surface of a topological insulator (a surface magnetic topological insulator MBE film)

Authors: Su-Yang Xu, M. Neupane, Chang Liu, D. Zhang, A. Richardella, L. A. Wray, N. Alidoust, M. Leandersson, T. Balasubramanian, J. Sánchez-Barriga, O. Rader, G. Landolt, B. Slomski, J. H. Dil, T. -R. Chang, J. Osterwalder, H. -T. Jeng, Hsin Lin, A. Bansil, Nitin Samarth, M. Zahid Hasan

Abstract: The surface of topological insulators is proposed as a promising platform for spintronics and quantum information applications. In particular, when time- reversal symmetry is broken, topological surface states are expected to exhibit a wide range of exotic spin phenomena for potential implementation in electronics. Such devices need to be fabricated using nanoscale artificial thin films. It is of… ▽ More The surface of topological insulators is proposed as a promising platform for spintronics and quantum information applications. In particular, when time- reversal symmetry is broken, topological surface states are expected to exhibit a wide range of exotic spin phenomena for potential implementation in electronics. Such devices need to be fabricated using nanoscale artificial thin films. It is of critical importance to study the spin behavior of artificial topological MBE thin films associated with magnetic dopants, and with regards to quantum size effects related to surface-to-surface tunneling as well as experimentally isolate time-reversal breaking from non-intrinsic surface electronic gaps. Here we present observation of the first (and thorough) study of magnetically induced spin reorientation phenomena on the surface of a topological insulator. Our results reveal dramatic rearrangements of the spin configuration upon magnetic doping contrasted with chemically similar nonmagnetic doping as well as with quantum tunneling phenomena in ultra-thin high quality MBE films. While we observe that the spin rearrangement induced by quantum tunneling occurs in a time-reversal invariant fashion, we present critical and systematic observation of an out-of-plane spin texture evolution correlated with magnetic interactions, which breaks time-reversal symmetry, demonstrating microscopic TRB at a Kramers' point on the surface. △ Less

Submitted 13 December, 2012; v1 submitted 10 June, 2012; originally announced June 2012.

Comments: 12 pages, 3 Figures, Related results at http://online.kitp.ucsb.edu/online/topomat11/hasan/oh/01.html

Topological crystalline insulator states in Pb(1-x)Sn(x)Se

Authors: P. Dziawa, B. J. Kowalski, K. Dybko, R. Buczko, A. Szczerbakow, M. Szot, E. Łusakowska, T. Balasubramanian, B. M. Wojek, M. H. Berntsen, O. Tjernberg, T. Story

Abstract: Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested th… ▽ More Topological insulators are a novel class of quantum materials in which time-reversal symmetry, relativistic (spin-orbit) effects and an inverted band structure result in electronic metallic states on the surfaces of bulk crystals. These helical states exhibit a Dirac-like energy dispersion across the bulk bandgap, and they are topologically protected. Recent theoretical proposals have suggested the existence of topological crystalline insulators, a novel class of topological insulators in which crystalline symmetry replaces the role of time-reversal symmetry in topological protection [1,2]. In this study, we show that the narrow-gap semiconductor Pb(1-x)Sn(x)Se is a topological crystalline insulator for x=0.23. Temperature-dependent magnetotransport measurements and angle-resolved photoelectron spectroscopy demonstrate that the material undergoes a temperature-driven topological phase transition from a trivial insulator to a topological crystalline insulator. These experimental findings add a new class to the family of topological insulators. We expect these results to be the beginning of both a considerable body of additional research on topological crystalline insulators as well as detailed studies of topological phase transitions. △ Less

Submitted 15 August, 2013; v1 submitted 8 June, 2012; originally announced June 2012.

Comments: v2: published revised manuscript (6 pages, 3 figures) and supplementary information (5 pages, 8 figures)

Journal ref: Nature Materials 11, 1023-1027 (2012)