Showing 1–50 of 51 results for author: Bernardi, M

Deep-ultraviolet transparent conducting SrSnO3 via heterostructure design

Authors: Fengdeng Liu, Zhifei Yang, David Abramovitch, Silu Guo, K. Andre Mkhoyan, Marco Bernardi, Bharat Jalan

Abstract: Exploration and advancements in ultra-wide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. A critical challenge lies in finding a semiconductor that is highly transparent to DUV wavelengths yet conductive with high mobility at room temperature. Here, we achieved both high transparency and high conductivity by employin… ▽ More Exploration and advancements in ultra-wide bandgap (UWBG) semiconductors are pivotal for next-generation high-power electronics and deep-ultraviolet (DUV) optoelectronics. A critical challenge lies in finding a semiconductor that is highly transparent to DUV wavelengths yet conductive with high mobility at room temperature. Here, we achieved both high transparency and high conductivity by employing a thin heterostructure design. The heterostructure facilitated high conductivity by screening phonons using free carriers, while the atomically thin films ensured high transparency. We utilized a heterostructure comprising SrSnO3/La:SrSnO3/GdScO3 (110) and applied electrostatic gating to effectively separate electrons from their dopant atoms. This led to a modulation of carrier density from 1018 cm-3 to 1020 cm-3, with room temperature mobilities ranging from 40 to 140 cm2V-1s-1. The phonon-limited mobility, calculated from first principles, closely matched experimental results, suggesting that room-temperature mobility could be further increased with higher electron density. Additionally, the sample exhibited 85% optical transparency at a 300 nm wavelength. These findings highlight the potential of heterostructure design for transparent UWBG semiconductor applications, especially in deep-ultraviolet regime. △ Less

Submitted 14 May, 2024; originally announced May 2024.

Comments: 32 pages

Respective Roles of Electron-Phonon and Electron-Electron Interactions in the Transport and Quasiparticle Properties of SrVO$_3$

Authors: David J. Abramovitch, Jernej Mravlje, Jin-Jian Zhou, Antoine Georges, Marco Bernardi

Abstract: The spectral and transport properties of strongly correlated metals, such as SrVO$_3$ (SVO), are widely attributed to electron-electron ($e$-$e$) interactions, with lattice vibrations (phonons) playing a secondary role. Here, using first-principles electron-phonon ($e$-ph) and dynamical mean field theory calculations, we show that $e$-ph interactions play an essential role in SVO: they govern the… ▽ More The spectral and transport properties of strongly correlated metals, such as SrVO$_3$ (SVO), are widely attributed to electron-electron ($e$-$e$) interactions, with lattice vibrations (phonons) playing a secondary role. Here, using first-principles electron-phonon ($e$-ph) and dynamical mean field theory calculations, we show that $e$-ph interactions play an essential role in SVO: they govern the electron scattering and resistivity in a wide temperature range down to 30 K, and induce an experimentally observed kink in the spectral function. In contrast, the $e$-$e$ interactions control quasiparticle renormalizations and low temperature transport, and enhance the $e$-ph coupling. We clarify the origin of the near $T^2$ temperature dependence of the resistivity by analyzing the $e$-$e$ and $e$-ph limited transport regimes. Our work disentangles the electronic and lattice degrees of freedom in a prototypical correlated metal, revealing the dominant role of $e$-ph interactions in SVO. △ Less

Submitted 11 April, 2024; originally announced April 2024.

Comments: 7 pages, 4 figures

First-principles electron-phonon interactions and electronic transport in large-angle twisted bilayer graphene

Authors: Shiyuan Gao, Jin-Jian Zhou, Yao Luo, Marco Bernardi

Abstract: Twisted bilayer graphene (tBLG) has emerged as an exciting platform for novel condensed matter physics. However, electron-phonon ($e$-ph) interactions in tBLG and their effects on electronic transport are not completely understood. Here we show first-principles calculations of $e$-ph interactions and resistivity in commensurate tBLG with large twist angles of 13.2 and 21.8 degrees. These calculati… ▽ More Twisted bilayer graphene (tBLG) has emerged as an exciting platform for novel condensed matter physics. However, electron-phonon ($e$-ph) interactions in tBLG and their effects on electronic transport are not completely understood. Here we show first-principles calculations of $e$-ph interactions and resistivity in commensurate tBLG with large twist angles of 13.2 and 21.8 degrees. These calculations overcome key technical barriers, including large unit cells of up to 76 atoms, Brillouin-zone folding of the $e$-ph interactions, and unstable lattice vibrations due to the AA-stacked domains. We show that $e$-ph interactions due to layer-breathing (LB) phonons enhance intervalley scattering in large-angle tBLG. This interaction effectively couples the two layers, which are otherwise electronically decoupled at such large twist angles. As a result, the phonon-limited resistivity in tBLG deviates from the temperature-linear trend characteristic of monolayer graphene and tBLG near the magic angle. Taken together, our work quantifies $e$-ph interactions and scattering mechanisms in tBLG, revealing subtle interlayer coupling effects at large twist angles. △ Less

Submitted 29 February, 2024; originally announced February 2024.

Data-driven compression of electron-phonon interactions

Authors: Yao Luo, Dhruv Desai, Benjamin K. Chang, Jinsoo Park, Marco Bernardi

Abstract: First-principles calculations of electron interactions in materials have seen rapid progress in recent years, with electron-phonon (e-ph) interactions being a prime example. However, these techniques use large matrices encoding the interactions on dense momentum grids, which reduces computational efficiency and obscures interpretability. For e-ph interactions, existing interpolation techniques lev… ▽ More First-principles calculations of electron interactions in materials have seen rapid progress in recent years, with electron-phonon (e-ph) interactions being a prime example. However, these techniques use large matrices encoding the interactions on dense momentum grids, which reduces computational efficiency and obscures interpretability. For e-ph interactions, existing interpolation techniques leverage locality in real space, but the high dimensionality of the data remains a bottleneck to balance cost and accuracy. Here we show an efficient way to compress e-ph interactions based on singular value decomposition (SVD), a widely used matrix / image compression technique. Leveraging (un)constrained SVD methods, we accurately predict material properties related to e-ph interactions - including charge mobility, spin relaxation times, band renormalization, and superconducting critical temperature - while using only a small fraction (1-2%) of the interaction data. These findings unveil the hidden low-dimensional nature of e-ph interactions. Furthermore, they accelerate state-of-the-art first-principles e-ph calculations by about two orders of magnitudes without sacrificing accuracy. Our Pareto-optimal parametrization of e-ph interactions can be readily generalized to electron-electron and electron-defect interactions, as well as to other couplings, advancing quantitative studies of condensed matter. △ Less

Submitted 31 March, 2024; v1 submitted 20 January, 2024; originally announced January 2024.

Comments: 12 pages, 3 figures

First-Principles Electron-Phonon Interactions and Polarons in the Parent Cuprate La$_2$CuO$_4$

Authors: Benjamin K. Chang, Iurii Timrov, Jinsoo Park, Jin-Jian Zhou, Nicola Marzari, Marco Bernardi

Abstract: Understanding electronic interactions in high-temperature superconductors is an outstanding challenge. In the widely studied cuprate materials, experimental evidence points to strong electron-phonon ($e$-ph) coupling and broad photoemission spectra. Yet, the microscopic origin of this behavior is not fully understood. Here we study $e$-ph interactions and polarons in a prototypical parent (undoped… ▽ More Understanding electronic interactions in high-temperature superconductors is an outstanding challenge. In the widely studied cuprate materials, experimental evidence points to strong electron-phonon ($e$-ph) coupling and broad photoemission spectra. Yet, the microscopic origin of this behavior is not fully understood. Here we study $e$-ph interactions and polarons in a prototypical parent (undoped) cuprate, La$_2$CuO$_4$ (LCO), by means of first-principles calculations. Leveraging parameter-free Hubbard-corrected density functional theory, we obtain a ground state with band gap and Cu magnetic moment in nearly exact agreement with experiments. This enables a quantitative characterization of $e$-ph interactions. Our calculations reveal two classes of longitudinal optical (LO) phonons with strong $e$-ph coupling to hole states. These modes consist of Cu-O plane bond-stretching and bond-bending as well as vibrations of apical O atoms. The hole spectral functions, obtained with a cumulant method that can capture strong $e$-ph coupling, exhibit broad quasiparticle peaks with a small spectral weight ($Z\approx0.25$) and pronounced LO-phonon sidebands characteristic of polaron effects. Our calculations predict features observed in photoemission spectra, including a 40-meV peak in the $e$-ph coupling distribution function not explained by existing models. These results show that the universal strong $e$-ph coupling found experimentally in lanthanum cuprates is an intrinsic feature of the parent compound, and elucidates its microscopic origin. △ Less

Submitted 20 January, 2024; originally announced January 2024.

Comments: 6 pages, 4 figures

Hard X-ray Generation and Detection of Nanometer-Scale Localized Coherent Acoustic Wave Packets in SrTiO$_3$ and KTaO$_3$

Authors: Yijing Huang, Peihao Sun, Samuel W. Teitelbaum, Haoyuan Li, Yanwen Sun, Nan Wang, Sanghoon Song, Takahiro Sato, Matthieu Chollet, Taito Osaka, Ichiro Inoue, Ryan A. Duncan, Hyun D. Shin, Johann Haber, Jinjian Zhou, Marco Bernardi, Mingqiang Gu, James M. Rondinelli, Mariano Trigo, Makina Yabashi, Alexei A. Maznev, Keith A. Nelson, Diling Zhu, David A. Reis

Abstract: We demonstrate that the absorption of femtosecond x-ray pulses can excite quasi-spherical high-wavevector coherent acoustic phonon wavepackets using an all x-ray pump and probe scattering experiment. The time- and momentum-resolved diffuse scattering signal is consistent with strain pulses induced by the rapid electron cascade dynamics following photoionization at uncorrelated excitation centers.… ▽ More We demonstrate that the absorption of femtosecond x-ray pulses can excite quasi-spherical high-wavevector coherent acoustic phonon wavepackets using an all x-ray pump and probe scattering experiment. The time- and momentum-resolved diffuse scattering signal is consistent with strain pulses induced by the rapid electron cascade dynamics following photoionization at uncorrelated excitation centers. We quantify key parameters of this process, including the localization size of the strain wavepacket and the energy absorption efficiency, which are determined by the photoelectron and Auger electron cascade dynamics, as well as the electron-phonon interaction. In particular, we obtain the localization size of the observed strain wave packet to be 1.5 and 2.5 nm for bulk SrTiO$_3$ and KTaO$_3$ single crystals, even though there are no nanoscale structures or light-intensity patterns that would ordinarily be required to generate acoustic waves of wavelengths much shorter than the penetration depth. Whereas in GaAs and GaP we do not observe a signal above background. The results provide crucial information on x-ray matter interactions, which sheds light on the mechanism of x-ray energy deposition, and the study of high wavevector acoustic phonons and thermal transport at the nanoscale. △ Less

Submitted 2 January, 2024; v1 submitted 27 December, 2023; originally announced December 2023.

Dynamic mode decomposition of nonequilibrium electron-phonon dynamics: accelerating the first-principles real-time Boltzmann equation

Authors: Ivan Maliyov, Jia Yin, Jia Yao, Chao Yang, Marco Bernardi

Abstract: Nonequilibrium dynamics governed by electron-phonon (e-ph) interactions plays a key role in electronic devices and spectroscopies and is central to understanding electronic excitations in materials. The real-time Boltzmann transport equation (rt-BTE) with collision processes computed from first principles can describe the coupled dynamics of electrons and atomic vibrations (phonons). Yet, a bottle… ▽ More Nonequilibrium dynamics governed by electron-phonon (e-ph) interactions plays a key role in electronic devices and spectroscopies and is central to understanding electronic excitations in materials. The real-time Boltzmann transport equation (rt-BTE) with collision processes computed from first principles can describe the coupled dynamics of electrons and atomic vibrations (phonons). Yet, a bottleneck of these simulations is the calculation of e-ph scattering integrals on dense momentum grids at each time step. Here we show a data-driven approach based on dynamic mode decomposition (DMD) that can accelerate the time propagation of the rt-BTE and identify dominant electronic processes. We apply this approach to two case studies, high-field charge transport and ultrafast excited electron relaxation. In both cases, simulating only a short time window of ~10% of the dynamics suffices to predict the dynamics from initial excitation to steady state using DMD extrapolation. Analysis of the momentum-space modes extracted from DMD sheds light on the microscopic mechanisms governing electron relaxation to steady state or equilibrium. The combination of accuracy and efficiency makes our DMD-based method a valuable tool for investigating ultrafast dynamics in a wide range of materials. △ Less

Submitted 13 November, 2023; originally announced November 2023.

On the vibrational properties of transition metal doped ZnO: surface, defect, and bandgap engineering

Authors: Viviane M. A. Lage, Carlos Rodríguez-Fernández, Felipe S. Vieira, Rafael T. da Silva, Maria Inês B. Bernardi, Maurício M de Lima Jr., Andrés Cantarero, Hugo B. de Carvalho

Abstract: We present a comprehensive study on the structure and optical properties of Mn-and Co-doped ZnO samples prepared via solid-state reaction method with different dopant concentrations and atmospheres. The samples were structural and chemically characterized via X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray excited photoelectron spectroscopy. The opt… ▽ More We present a comprehensive study on the structure and optical properties of Mn-and Co-doped ZnO samples prepared via solid-state reaction method with different dopant concentrations and atmospheres. The samples were structural and chemically characterized via X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and X-ray excited photoelectron spectroscopy. The optical characterization was performed via Raman, photoluminescence, and diffuse photoreflectance spectroscopies. Emphasis was done on the studies of their vibrational properties. The structural data confirm the incorporation of Mn and Co ions into the wurtzite ZnO lattice. It is demonstrated that the usual observed additional bands in the Raman spectrum of transitional metal (TM) doped ZnO are related to structural damage, deriving from the doping process, and surface effects. The promoted surface optical phonons (SOP) are of Fröhlich character and, together with the longitudinal optical (LO) polar phonons, are directly dependent on the ZnO electronic structure. The enhancement of SOP and LO modes with TM-doping is explained in terms of nonhomogeneous doping, with the dopants concentrating mainly on the surface of grains, and a resonance effect due to the decrease of the ZnO bandgap promoted by the introduction of the 3d TM levels within the ZnO bandgap. We also discuss the origin of the controversial vibrational mode commonly observed in the Mn-doped ZnO system. It is stated that the observation of the analyzed vibrational properties is a signature of substitutional doping of the ZnO structure with tuning of ZnO optical absorption into the visible range of the electromagnetic spectrum. △ Less

Submitted 1 August, 2023; originally announced August 2023.

Combining Electron-Phonon and Dynamical Mean-Field Theory Calculations of Correlated Materials: Transport in the Correlated Metal Sr$_2$RuO$_4$

Authors: David J. Abramovitch, Jin-Jian Zhou, Jernej Mravlje, Antoine Georges, Marco Bernardi

Abstract: Electron-electron ($e$-$e$) and electron-phonon ($e$-ph) interactions are challenging to describe in correlated materials, where their joint effects govern unconventional transport, phase transitions, and superconductivity. Here we combine first-principles $e$-ph calculations with dynamical mean field theory (DMFT) as a step toward a unified description of $e$-$e$ and $e$-ph interactions in correl… ▽ More Electron-electron ($e$-$e$) and electron-phonon ($e$-ph) interactions are challenging to describe in correlated materials, where their joint effects govern unconventional transport, phase transitions, and superconductivity. Here we combine first-principles $e$-ph calculations with dynamical mean field theory (DMFT) as a step toward a unified description of $e$-$e$ and $e$-ph interactions in correlated materials. We compute the $e$-ph self-energy using the DMFT electron Green's function, and combine it with the $e$-$e$ self-energy from DMFT to obtain a Green's function including both interactions. This approach captures the renormalization of quasiparticle dispersion and spectral weight on equal footing. Using our method, we study the $e$-ph and $e$-$e$ contributions to the resistivity and spectral functions in the correlated metal Sr$_2$RuO$_4$. In this material, our results show that $e$-$e$ interactions dominate transport and spectral broadening in the temperature range we study (50$-$310~K), while $e$-ph interactions are relatively weak and account for only $\sim$10\% of the experimental resistivity. We also compute effective scattering rates, and find that the $e$-$e$ interactions result in scattering several times greater than the Planckian value $k_BT$, whereas $e$-ph interactions are associated with scattering rates lower than $k_BT$. Our work demonstrates a first-principles approach to combine electron dynamical correlations from DMFT with $e$-ph interactions in a consistent way, advancing quantitative studies of correlated materials. △ Less

Submitted 2 August, 2023; v1 submitted 13 April, 2023; originally announced April 2023.

Comments: 10 pages, 5 figures. This revision has been accepted in PR Materials

Journal ref: Phys. Rev. Materials 7, 093801, 2023

Dominant two-dimensional electron-phonon interactions in the bulk Dirac semimetal Na3Bi

Authors: Dhruv C. Desai, Jinsoo Park, Jin-Jian Zhou, Marco Bernardi

Abstract: Bulk Dirac semimetals (DSMs) exhibit unconventional transport properties and phase transitions due to their peculiar low-energy band structure. Yet the electronic interactions governing nonequilibrium phenomena in DSMs are not fully understood. Here we show that electron-phonon (e-ph) interactions in a prototypical bulk DSM, Na3Bi, are predominantly two-dimensional (2D). Our first-principles calcu… ▽ More Bulk Dirac semimetals (DSMs) exhibit unconventional transport properties and phase transitions due to their peculiar low-energy band structure. Yet the electronic interactions governing nonequilibrium phenomena in DSMs are not fully understood. Here we show that electron-phonon (e-ph) interactions in a prototypical bulk DSM, Na3Bi, are predominantly two-dimensional (2D). Our first-principles calculations discover a 2D optical phonon with strong e-ph interactions associated with in-plane vibrations of Na atoms. We show that this 2D mode governs e-ph scattering and charge transport in Na3Bi, and induces a dynamical phase transition to a Weyl semimetal. Our work advances quantitative analysis of electron interactions in topological semimetals and reveals dominant low-dimensional interactions in bulk quantum materials. △ Less

Submitted 29 March, 2023; originally announced March 2023.

Comments: Single column, 22 pages, 5 figures

Efficient Mean-Field Simulation of Quantum Circuits Inspired by Density Functional Theory

Authors: Marco Bernardi

Abstract: Exact simulations of quantum circuits (QCs) are currently limited to $\sim$50 qubits because the memory and computational cost required to store the QC wave function scale exponentially with qubit number. Therefore, developing efficient schemes for approximate QC simulations is a current research focus. Here we show simulations of QCs with a method inspired by density functional theory (DFT), a wi… ▽ More Exact simulations of quantum circuits (QCs) are currently limited to $\sim$50 qubits because the memory and computational cost required to store the QC wave function scale exponentially with qubit number. Therefore, developing efficient schemes for approximate QC simulations is a current research focus. Here we show simulations of QCs with a method inspired by density functional theory (DFT), a widely used approach to study many-electron systems. Our calculations can predict marginal single-qubit probabilities (SQPs) with over 90% accuracy in several classes of QCs with universal gate sets, using memory and computational resources linear in qubit number despite the formal exponential cost of the SQPs. This is achieved by developing a mean-field description of QCs and formulating optimal single- and two-qubit gate functionals $-$ analogs of exchange-correlation functionals in DFT $-$ to evolve the SQPs without computing the QC wave function. Current limitations and future extensions of this formalism are discussed. △ Less

Submitted 19 October, 2023; v1 submitted 28 October, 2022; originally announced October 2022.

First-Principles Ultrafast Exciton Dynamics and Time-Domain Spectroscopies: Dark-Exciton Mediated Valley Depolarization in Monolayer WSe$_2$

Authors: Hsiao-Yi Chen, Marco Bernardi

Abstract: Calculations combining first-principles electron-phonon ($e$-ph) interactions with the Boltzmann equation enable studies of ultrafast carrier and phonon dynamics. However, in materials with weak Coulomb screening, electrons and holes form bound excitons and their scattering processes become correlated, posing additional challenges for modeling nonequilibrium physics. Here we show calculations of u… ▽ More Calculations combining first-principles electron-phonon ($e$-ph) interactions with the Boltzmann equation enable studies of ultrafast carrier and phonon dynamics. However, in materials with weak Coulomb screening, electrons and holes form bound excitons and their scattering processes become correlated, posing additional challenges for modeling nonequilibrium physics. Here we show calculations of ultrafast exciton dynamics and related time-domain spectroscopies using $ab~initio$ exciton-phonon (ex-ph) interactions together with an excitonic Boltzmann equation. Starting from the nonequilibrium exciton populations, we develop simulations of time-domain absorption and photoemission spectra that take into account electron-hole correlations. We use this method to study monolayer WSe$_2$, where our calculations predict sub-picosecond timescales for exciton relaxation and valley depolarization and reveal the key role of intermediate dark excitons. The approach introduced in this work enables a quantitative description of nonequilibrium dynamics and ultrafast spectroscopies in materials with strongly bound excitons. △ Less

Submitted 12 October, 2022; originally announced October 2022.

Comments: 10 pages, 6 figures

Many-body theory of phonon-induced spin relaxation and decoherence

Authors: Jinsoo Park, Yao Luo, Jin-Jian Zhou, Marco Bernardi

Abstract: First-principles calculations enable accurate predictions of electronic interactions and dynamics. However, computing the electron spin dynamics remains challenging. The spin-orbit interaction causes various dynamical phenomena that couple with phonons, such as spin precession and spin-flip e-ph scattering, which are difficult to describe with current first-principles calculations. In this work, w… ▽ More First-principles calculations enable accurate predictions of electronic interactions and dynamics. However, computing the electron spin dynamics remains challenging. The spin-orbit interaction causes various dynamical phenomena that couple with phonons, such as spin precession and spin-flip e-ph scattering, which are difficult to describe with current first-principles calculations. In this work, we show a rigorous framework to study phonon-induced spin relaxation and decoherence, by computing the spin-spin correlation function and its vertex corrections due to e-ph interactions. We apply this approach to a model system and develop corresponding first-principles calculations of spin relaxation in GaAs. Our vertex-correction formalism is shown to capture the Elliott-Yafet, Dyakonov-Perel, and strong-precession mechanisms - three independent spin decoherence regimes with distinct physical origins - thereby unifying their theoretical treatment and calculation. Our method is general and enables quantitative studies of spin relaxation, decoherence, and transport in a wide range of materials and devices. △ Less

Submitted 19 August, 2022; originally announced August 2022.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. B 106, 174404 (2022)

Magnetization of Zn1-xCoxO nanoparticles: single-ion anisotropy and spin clustering

Authors: X. Gratens, B. de Abreu Silva, M. I. B. Bernardi, H. B. de Carvalho, A. Franco Jr, V. A. Chitta

Abstract: The magnetization of Zn1-xCoxO (0.0055 < x < 0.073) nanoparticles has been measured as a function of temperature T (1.7 K < T , 10 K) and for magnetic field up to 65 kOe using a SQUID magnetometer. Samples were synthesized by three different growth methods: microwave-assisted hydrothermal, combustion reaction and sol-gel. For all studied samples, the magnetic properties derive from the antiferroma… ▽ More The magnetization of Zn1-xCoxO (0.0055 < x < 0.073) nanoparticles has been measured as a function of temperature T (1.7 K < T , 10 K) and for magnetic field up to 65 kOe using a SQUID magnetometer. Samples were synthesized by three different growth methods: microwave-assisted hydrothermal, combustion reaction and sol-gel. For all studied samples, the magnetic properties derive from the antiferromagnetic (AF) spin clustering due to the Co2+ nearest neighbors. At T >= 6 K, the magnetization of the Co2+ ions has a Brillouin-type behavior, but below 6 K, it shows a notable deviation. We have shown that the observed deviation may be derived from single-ion anisotropy (SIA) with uniaxial symmetry. Results of fits show that the axial-SIA parameter D (typically D = 4.4 K) is slightly larger that the bulk value D = 3.97 K. No significant change of D has been observed as a function of the Co concentration or the growth process. For each sample, the SIA fit gave also the effective concentration (x) corresponding to the technical saturation value of the magnetization. Comparison of the concentration dependence of x with predictions based on cluster models shows an enhancement of the AF spin clustering independent of the growth method. This is ascribed to a clamped non-random distribution of the cobalt ions in the nanoparticles. The approach of the local concentration (xL) has been used to quantify the observed deviation from randomicity. Assuming a ZnO core/ Zn1-xCoxO shell nanoparticle, the thickness of the shell has been determined from the ratio xL/x. △ Less

Submitted 12 May, 2022; originally announced May 2022.

Predicting Phonon-Induced Spin Decoherence from First Principles: Colossal Spin Renormalization in Condensed Matter

Authors: Jinsoo Park, Jin-Jian Zhou, Yao Luo, Marco Bernardi

Abstract: Developing a microscopic understanding of spin decoherence is essential to advancing quantum technologies. Electron spin decoherence due to atomic vibrations (phonons) plays a special role as it sets an intrinsic limit to the performance of spin-based quantum devices. Two main sources of phonon-induced spin decoherence - the Elliott-Yafet (EY) and Dyakonov-Perel (DP) mechanisms - have distinct phy… ▽ More Developing a microscopic understanding of spin decoherence is essential to advancing quantum technologies. Electron spin decoherence due to atomic vibrations (phonons) plays a special role as it sets an intrinsic limit to the performance of spin-based quantum devices. Two main sources of phonon-induced spin decoherence - the Elliott-Yafet (EY) and Dyakonov-Perel (DP) mechanisms - have distinct physical origins and theoretical treatments. Here we show calculations that unify their modeling and enable accurate predictions of spin relaxation and precession in semiconductors. We compute the phonon-dressed vertex of the spin-spin correlation function, with a treatment analogous to the calculation of the anomalous electron magnetic moment in QED. We find that the vertex correction provides a giant renormalization of the electron spin dynamics in solids, greater by many orders of magnitude than the corresponding correction in vacuum. Our work demonstrates a general approach for quantitative analysis of spin decoherence in materials, advancing the quest for spin-based quantum technologies. △ Less

Submitted 23 August, 2022; v1 submitted 12 March, 2022; originally announced March 2022.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Lett. 129, 197201 (2022)

Comparison of the canonical transformation and energy functional formalisms for ab initio calculations of self-localized polarons

Authors: Yao Luo, Benjamin K. Chang, Marco Bernardi

Abstract: In materials with strong electron-phonon (e-ph) interactions, charge carriers can distort the surrounding lattice and become trapped, forming self-localized (small) polarons. We recently developed an ab initio approach based on canonical transformations to efficiently compute the formation and energetics of small polarons[1]. A different approach based on a Landau-Pekar energy functional has been… ▽ More In materials with strong electron-phonon (e-ph) interactions, charge carriers can distort the surrounding lattice and become trapped, forming self-localized (small) polarons. We recently developed an ab initio approach based on canonical transformations to efficiently compute the formation and energetics of small polarons[1]. A different approach based on a Landau-Pekar energy functional has been proposed in the recent literature [2,3]. In this work, we analyze and compare these two methods in detail. We show that the small polaron energy is identical in the two formalisms when using the same polaron wave function. We also show that our canonical transformation formalism can predict polaron band structures and can properly treat zero- and finite-temperature lattice vibration effects, although at present using a fixed polaron wave function. Conversely, the energy functional approach can compute the polaron wave function, but as we show here it neglects lattice vibrations and cannot address polaron self-localization and thermal band narrowing. Taken together, this work relates two different methods developed recently to study polarons from first-principles, highlighting their merits and shortcomings and discussing them both in a unified formalism. △ Less

Submitted 1 March, 2022; originally announced March 2022.

Comments: 14 pages, 3 figures

Dark Matter Direct Detection in Materials with Spin-Orbit Coupling

Authors: Hsiao-Yi Chen, Andrea Mitridate, Tanner Trickle, Zhengkang Zhang, Marco Bernardi, Kathryn M. Zurek

Abstract: Semiconductors with $\mathcal{O}(\text{meV})$ band gaps have been shown to be promising targets to search for sub-MeV mass dark matter (DM). In this paper we focus on a class of materials where such narrow band gaps arise naturally as a consequence of spin-orbit coupling (SOC). Specifically, we are interested in computing DM-electron scattering and absorption rates in these materials using state-o… ▽ More Semiconductors with $\mathcal{O}(\text{meV})$ band gaps have been shown to be promising targets to search for sub-MeV mass dark matter (DM). In this paper we focus on a class of materials where such narrow band gaps arise naturally as a consequence of spin-orbit coupling (SOC). Specifically, we are interested in computing DM-electron scattering and absorption rates in these materials using state-of-the-art density functional theory (DFT) techniques. To do this, we extend the DM interaction rate calculation to include SOC effects which necessitates a generalization to spin-dependent wave functions. We apply our new formalism to calculate limits for several DM benchmark models using an example ZrTe$_{5}$ target and show that the inclusion of SOC can substantially alter projected constraints. △ Less

Submitted 23 February, 2022; originally announced February 2022.

Comments: 16 pages, 6 figures

Report number: CALTH-TH-2022-007

First-principles ionized-impurity scattering and charge transport in doped materials

Authors: I-Te Lu, Jin-Jian Zhou, Jinsoo Park, Marco Bernardi

Abstract: Scattering of carriers with ionized impurities governs charge transport in doped semiconductors. However, electron interactions with ionized impurities cannot be fully described with quantitative first-principles calculations, so their understanding relies primarily on simplified models. Here we show an ab initio approach to compute the interactions between electrons and ionized impurities or othe… ▽ More Scattering of carriers with ionized impurities governs charge transport in doped semiconductors. However, electron interactions with ionized impurities cannot be fully described with quantitative first-principles calculations, so their understanding relies primarily on simplified models. Here we show an ab initio approach to compute the interactions between electrons and ionized impurities or other charged defects. It includes the short- and long-range electron-defect (e-d) interactions on equal footing, and allows for efficient interpolation of the e-d matrix elements. We combine the e-d and electron-phonon interactions in the Boltzmann transport equation to compute the carrier mobilities in doped silicon over a wide range of temperature and doping concentrations, spanning seamlessly the defect- and phonon-limited transport regimes. The individual contributions of the defect- and phonon-scattering mechanisms to the carrier relaxation times and mean-free paths are analyzed. Our method provides a powerful tool to study electronic interactions in doped materials. It broadens the scope of first-principles transport calculations, enabling studies of a wide range of doped semiconductors and oxides with application to electronics, energy and quantum technologies. △ Less

Submitted 10 October, 2021; originally announced October 2021.

Ab initio electron dynamics in high electric fields: accurate predictions of velocity-field curves

Authors: Ivan Maliyov, Jinsoo Park, Marco Bernardi

Abstract: Electron dynamics in external electric fields governs the behavior of solid-state electronic devices. First-principles calculations enable precise predictions of charge transport in low electric fields. However, studies of high-field electron dynamics remain elusive due to a lack of accurate and broadly applicable methods. Here we develop an efficient approach to solve the real-time Boltzmann tran… ▽ More Electron dynamics in external electric fields governs the behavior of solid-state electronic devices. First-principles calculations enable precise predictions of charge transport in low electric fields. However, studies of high-field electron dynamics remain elusive due to a lack of accurate and broadly applicable methods. Here we develop an efficient approach to solve the real-time Boltzmann transport equation with both the electric field term and ab initio electron-phonon collisions. These simulations provide field-dependent electronic distributions in the time domain, allowing us to investigate both transient and steady-state transport in electric fields ranging from low to high (>10 kV/cm). The broad capabilities of our approach are shown by computing nonequilibrium electron occupations and velocity-field curves in Si, GaAs, and graphene, obtaining results in quantitative agreement with experiment. Our approach sheds light on microscopic details of transport in high electric fields, including dominant scattering mechanisms and valley occupation dynamics. Our results demonstrate quantitatively accurate calculations of electron dynamics in low-to-high electric fields, with broad application to power- and micro-electronics, optoelectronics, and sensing. △ Less

Submitted 2 September, 2021; originally announced September 2021.

Comments: 7 pages, 4 figures

Intermediate Polaronic Charge Transport in Organic Crystals from a Many-Body First-Principles Approach

Authors: Benjamin K. Chang, Jin-Jian Zhou, Nien-En Lee, Marco Bernardi

Abstract: Predicting the electrical properties of organic molecular crystals (OMCs) is challenging due to their complex crystal structures and electron-phonon (e-ph) interactions. Charge transport in OMCs is conventionally categorized into two limiting regimes $-$ band transport, characterized by weak e-ph interactions, and charge hopping due to localized polarons formed by strong e-ph interactions. However… ▽ More Predicting the electrical properties of organic molecular crystals (OMCs) is challenging due to their complex crystal structures and electron-phonon (e-ph) interactions. Charge transport in OMCs is conventionally categorized into two limiting regimes $-$ band transport, characterized by weak e-ph interactions, and charge hopping due to localized polarons formed by strong e-ph interactions. However, between these two limiting cases there is a less well understood intermediate regime where polarons are present but transport does not occur via hopping. Here we show a many-body first-principles approach that can accurately predict the carrier mobility in OMCs in the intermediate regime and shed light on its microscopic origin. Our approach combines a finite-temperature cumulant method to describe strong e-ph interactions with Green-Kubo transport calculations. We apply this parameter-free framework to naphthalene crystal, demonstrating electron mobility predictions within a factor of 1.5$-$2 of experiment between 100$-$300 K. Our analysis reveals that electrons couple strongly with both inter- and intramolecular phonons in the intermediate regime, as evidenced by the formation of a broad polaron satellite peak in the electron spectral function and the failure of the Boltzmann equation. Our study advances quantitative modeling of charge transport in complex organic crystals. △ Less

Submitted 7 January, 2022; v1 submitted 17 June, 2021; originally announced June 2021.

Comments: 10 pages, 6 figures

Journal ref: npj Comput Mater 8, 63 (2022)

Cu Modified SrTiO3 Perovskites Toward Enhanced Water Gas Shift Catalysis: A Combined Experimental and Computational Study

Authors: Vitor C. Coletta, Renato V. Goncalves, Maria I. B. Bernardi, Dorian A. H. Hanaor, M. Hussein N. Assadi, Francielle C. F. Marcos, Francisco G. E. Nogueira, Elisabete M. Assaf, Valmor R. Mastelaro

Abstract: The water gas shift reaction (WGS) is important and widely applied in the production of H2. Cu modified perovskites are promising catalysts for WGS reactions in hydrogen generation. However, the structure-dependent stability and reaction pathways of such materials remain unclear. Herein, we report catalytically active Cu modified SrTiO3 (nominally SrTi1-xCuxO3) prepared by a modified polymeric pre… ▽ More The water gas shift reaction (WGS) is important and widely applied in the production of H2. Cu modified perovskites are promising catalysts for WGS reactions in hydrogen generation. However, the structure-dependent stability and reaction pathways of such materials remain unclear. Herein, we report catalytically active Cu modified SrTiO3 (nominally SrTi1-xCuxO3) prepared by a modified polymeric precursor method. Microstructural analysis revealed a partially segregated CuO phase in the as-prepared materials. Operando X-ray diffraction and absorption spectroscopy showed the reduction of CuO into a stable metallic phase under conditions of WGS reactions for all compositions. Among the characterized materials, the x = 0.20 composition showed the highest turnover frequency, lowest activation energy, and the highest WGS rate at 300C. According to density functional calculations, the formation of CuO is energetically less favorable compared with SrTiO3, explaining why the segregated CuO phase on the SrTiO3 surface is reduced to Cu during the catalytic reaction, while SrTiO3 remains. For x = 0.20, the size of the segregated CuO phase is optimum for facilitating the catalytic reaction. In contrast, a higher Cu content (x = 0.3) results in an aggregation of smaller CuO particles, resulting in fewer surface active sites and a net decrease in catalytic performance. △ Less

Submitted 14 April, 2021; originally announced April 2021.

Journal ref: ACS Applied Energy Materials 2021, 4, 1, 452 - 461

Ab initio electron-phonon interactions in correlated electron systems

Authors: Jin-Jian Zhou, Jinsoo Park, Iurii Timrov, Andrea Floris, Matteo Cococcioni, Nicola Marzari, Marco Bernardi

Abstract: Electron-phonon ($e$-ph) interactions are pervasive in condensed matter, governing phenomena such as transport, superconductivity, charge-density waves, polarons and metal-insulator transitions. First-principles approaches enable accurate calculations of $e$-ph interactions in a wide range of solids. However, they remain an open challenge in correlated electron systems (CES), where density functio… ▽ More Electron-phonon ($e$-ph) interactions are pervasive in condensed matter, governing phenomena such as transport, superconductivity, charge-density waves, polarons and metal-insulator transitions. First-principles approaches enable accurate calculations of $e$-ph interactions in a wide range of solids. However, they remain an open challenge in correlated electron systems (CES), where density functional theory often fails to describe the ground state. Therefore reliable $e$-ph calculations remain out of reach for many transition metal oxides, high-temperature superconductors, Mott insulators, planetary materials and multiferroics. Here we show first-principles calculations of $e$-ph interactions in CES, using the framework of Hubbard-corrected density functional theory (DFT+$U$ ) and its linear response extension (DFPT+$U$), which can describe the electronic structure and lattice dynamics of many CES. We showcase the accuracy of this approach for a prototypical Mott system, CoO, carrying out a detailed investigation of its $e$-ph interactions and electron spectral functions. While standard DFPT gives unphysically divergent and short-ranged $e$-ph interactions, DFPT+$U$ is shown to remove the divergences and properly account for the long-range Fröhlich interaction, allowing us to model polaron effects in a Mott insulator. Our work establishes a broadly applicable and affordable approach for quantitative studies of e-ph interactions in CES, a novel theoretical tool to interpret experiments in this broad class of materials. △ Less

Submitted 19 March, 2021; v1 submitted 12 February, 2021; originally announced February 2021.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Lett. 127, 126404 (2021)

Magnetotransport in semiconductors and two-dimensional materials from first principles

Authors: Dhruv C. Desai, Bahdan Zviazhynski, Jin-Jian Zhou, Marco Bernardi

Abstract: We demonstrate a first-principles method to study magnetotransport in materials by solving the Boltzmann transport equation (BTE) in the presence of an external magnetic field. Our approach employs ab initio electron-phonon interactions and takes spin-orbit coupling into account. We apply our method to various semiconductors (Si and GaAs) and two-dimensional (2D) materials (graphene) as representa… ▽ More We demonstrate a first-principles method to study magnetotransport in materials by solving the Boltzmann transport equation (BTE) in the presence of an external magnetic field. Our approach employs ab initio electron-phonon interactions and takes spin-orbit coupling into account. We apply our method to various semiconductors (Si and GaAs) and two-dimensional (2D) materials (graphene) as representative case studies. The magnetoresistance, Hall mobility and Hall factor in Si and GaAs are in very good agreement with experiments. In graphene, our method predicts a large magnetoresistance, consistent with experiments. Analysis of the steady-state electron occupations in graphene shows the dominant role of optical phonon scattering and the breaking of the relaxation time approximation. Our work provides a detailed understanding of the microscopic mechanisms governing magnetotransport coefficients, establishing the BTE in a magnetic field as a broadly applicable first-principles tool to investigate transport in semiconductors and 2D materials. △ Less

Submitted 26 January, 2021; v1 submitted 16 January, 2021; originally announced January 2021.

Comments: 7 pages, 4 figures - corrected typos, and minor corrections to last section

Journal ref: Phys. Rev. B 103, 161103 (2021)

Facile ab initio approach for self-localized polarons from canonical transformations

Authors: Nien-En Lee, Hsiao-Yi Chen, Jin-Jian Zhou, Marco Bernardi

Abstract: Electronic states in a crystal can localize due to strong electron-phonon (e-ph) interactions, forming so-called small polarons. Methods to predict the formation and energetics of small polarons are either computationally costly or not geared toward quantitative predictions. Here we show a formalism based on canonical transformations to compute the polaron formation energy and wavefunction using a… ▽ More Electronic states in a crystal can localize due to strong electron-phonon (e-ph) interactions, forming so-called small polarons. Methods to predict the formation and energetics of small polarons are either computationally costly or not geared toward quantitative predictions. Here we show a formalism based on canonical transformations to compute the polaron formation energy and wavefunction using ab initio e-ph interactions. Comparison of the calculated polaron and band edge energies allows us to determine whether charge carriers in a material favor a localized small polaron over a delocalized Bloch state. Due to its low computational cost, our approach enables efficient studies of the formation and energetics of small polarons, as we demonstrate by investigating electron and hole polaron formation in alkali halides and metal oxides and peroxides. We outline refinements of our scheme and extensions to compute transport in the polaron hopping regime. △ Less

Submitted 6 November, 2020; originally announced November 2020.

Comments: 6 pages, 3 figures

Journal ref: Phys. Rev. Materials 5, 063805 (2021)

Toward precise simulations of the coupled ultrafast dynamics of electrons and atomic vibrations in materials

Authors: Xiao Tong, Marco Bernardi

Abstract: Ultrafast spectroscopies can access the dynamics of electrons and nuclei at short timescales, shedding light on nonequilibrium phenomena in materials. However, development of accurate calculations to interpret these experiments has lagged behind as widely adopted simulation schemes are limited to sub-picosecond timescales or employ simplified interactions lacking quantitative accuracy. Here we sho… ▽ More Ultrafast spectroscopies can access the dynamics of electrons and nuclei at short timescales, shedding light on nonequilibrium phenomena in materials. However, development of accurate calculations to interpret these experiments has lagged behind as widely adopted simulation schemes are limited to sub-picosecond timescales or employ simplified interactions lacking quantitative accuracy. Here we show a precise approach to obtain the time-dependent populations of nonequilibrium electrons and atomic vibrations (phonons) up to tens of picoseconds, with a femtosecond time resolution. Combining first-principles electron-phonon and phonon-phonon interactions with a parallel numerical scheme to time-step the coupled electron and phonon Boltzmann equations, our method provides unprecedented microscopic insight into scattering mechanisms in excited materials. Focusing on graphene as a case study, we demonstrate calculations of ultrafast electron and phonon dynamics, transient optical absorption, structural snapshots and diffuse X-ray scattering. Our first-principles approach paves the way for quantitative atomistic simulations of ultrafast dynamics in materials. △ Less

Submitted 16 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Research 3, 023072 (2021)

Radiative properties of quantum emitters in boron nitride from excited state calculations and Bayesian analysis

Authors: Shiyuan Gao, Hsiao-Yi Chen, Marco Bernardi

Abstract: Point defects in hexagonal boron nitride (hBN) have attracted growing attention as bright single-photon emitters. However, understanding of their atomic structure and radiative properties remains incomplete. Here we study the excited states and radiative lifetimes of over 20 native defects and carbon or oxygen impurities in hBN using ab initio density functional theory and GW plus Bethe-Salpeter e… ▽ More Point defects in hexagonal boron nitride (hBN) have attracted growing attention as bright single-photon emitters. However, understanding of their atomic structure and radiative properties remains incomplete. Here we study the excited states and radiative lifetimes of over 20 native defects and carbon or oxygen impurities in hBN using ab initio density functional theory and GW plus Bethe-Salpeter equation calculations, generating a large data set of their emission energy, polarization and lifetime. We find a wide variability across quantum emitters, with exciton energies ranging from 0.3 to 4 eV and radiative lifetimes from ns to ms for different defect structures. Through a Bayesian statistical analysis, we identify various high-likelihood defect emitters, among which the native $\mathrm{V_NN_B}$ defect is predicted to possess emission energy and radiative lifetime in agreement with experiments. Our work advances the microscopic understanding of hBN single-photon emitters and introduces a computational framework to characterize and identify quantum emitters in 2D materials. △ Less

Submitted 6 November, 2020; v1 submitted 20 July, 2020; originally announced July 2020.

Long-range quadrupole electron-phonon interaction from first principles

Authors: Jinsoo Park, Jin-Jian Zhou, Vatsal A. Jhalani, Cyrus E. Dreyer, Marco Bernardi

Abstract: Lattice vibrations in materials induce perturbations on the electron dynamics in the form of long-range (dipole and quadrupole) and short-range (octopole and higher) potentials. The dipole Fröhlich term can be included in current first-principles electron-phonon ($e$-ph) calculations and is present only in polar materials. The quadrupole $e$-ph interaction is present in both polar and nonpolar mat… ▽ More Lattice vibrations in materials induce perturbations on the electron dynamics in the form of long-range (dipole and quadrupole) and short-range (octopole and higher) potentials. The dipole Fröhlich term can be included in current first-principles electron-phonon ($e$-ph) calculations and is present only in polar materials. The quadrupole $e$-ph interaction is present in both polar and nonpolar materials, but currently it cannot be computed from first principles. Here we show an approach to compute the quadrupole $e$-ph interaction and include it in ab initio calculations of $e$-ph matrix elements. The accuracy of the approach is demonstrated by comparing with direct density functional perturbation theory calculations. We apply our method to silicon as a case of a nonpolar semiconductor and tetragonal PbTiO$_3$ as a case of a polar piezoelectric material. In both materials we find that the quadrupole term strongly impacts the $e$-ph matrix elements. Analysis of $e$-ph interactions for different phonon modes reveals that the quadrupole term mainly affects optical modes in silicon and acoustic modes in PbTiO$_3$, although the quadrupole term is needed for all modes to achieve quantitative accuracy. The effect of the quadrupole $e$-ph interaction on electron scattering processes and transport is shown to be important. Our approach enables accurate studies of $e$-ph interactions in broad classes of nonpolar, polar and piezoelectric materials. △ Less

Submitted 30 March, 2020; originally announced March 2020.

Comments: 9 pages, 5 figures, submitted

Journal ref: Phys. Rev. B 102, 125203 (2020)

Exciton-Phonon Interaction and Relaxation Times from First Principles

Authors: Hsiao-Yi Chen, Davide Sangalli, Marco Bernardi

Abstract: Electron-phonon ($e$-ph) interactions are key to understanding the dynamics of electrons in materials, and can be modeled accurately from first-principles. However, when electrons and holes form Coulomb-bound states (excitons), quantifying their interactions and scattering processes with phonons remains an open challenge. Here we show a rigorous approach for computing exciton-phonon (ex-ph) intera… ▽ More Electron-phonon ($e$-ph) interactions are key to understanding the dynamics of electrons in materials, and can be modeled accurately from first-principles. However, when electrons and holes form Coulomb-bound states (excitons), quantifying their interactions and scattering processes with phonons remains an open challenge. Here we show a rigorous approach for computing exciton-phonon (ex-ph) interactions and the associated exciton dynamical processes from first principles. Starting from the ab initio Bethe-Salpeter equation, we derive expressions for the ex-ph matrix elements and relaxation times. We apply our method to bulk hexagonal boron nitride, for which we map the ex-ph relaxation times as a function of exciton momentum and energy, analyze the temperature and phonon-mode dependence of the ex-ph scattering processes, and accurately predict the phonon-assisted photoluminescence. The approach introduced in this work is general and provides a framework for investigating exciton dynamics in a wide range of materials. △ Less

Submitted 20 February, 2020; originally announced February 2020.

Journal ref: Phys. Rev. Lett. 125, 107401 (2020)

Piezoelectric Electron-Phonon Interaction from Ab Initio Dynamical Quadrupoles: Impact on Charge Transport in Wurtzite GaN

Authors: Vatsal A. Jhalani, Jin-Jian Zhou, Jinsoo Park, Cyrus E. Dreyer, Marco Bernardi

Abstract: First-principles calculations of $e$-ph interactions are becoming a pillar of electronic structure theory. However, the current approach is incomplete. The piezoelectric (PE) $e$-ph interaction, a long-range scattering mechanism due to acoustic phonons in non-centrosymmetric polar materials, is not accurately described at present. Current calculations include short-range $e$-ph interactions (obtai… ▽ More First-principles calculations of $e$-ph interactions are becoming a pillar of electronic structure theory. However, the current approach is incomplete. The piezoelectric (PE) $e$-ph interaction, a long-range scattering mechanism due to acoustic phonons in non-centrosymmetric polar materials, is not accurately described at present. Current calculations include short-range $e$-ph interactions (obtained by interpolation) and the dipole-like Fröhlich long-range coupling in polar materials, but lack important quadrupole effects for acoustic modes and PE materials. Here we derive and compute the long-range $e$-ph interaction due to dynamical quadrupoles, and apply this framework to investigate $e$-ph interactions and the carrier mobility in the PE material wurtzite GaN. We show that the quadrupole contribution is essential to obtain accurate $e$-ph matrix elements for acoustic modes and to compute PE scattering. Our work resolves the outstanding problem of correctly computing $e$-ph interactions for acoustic modes from first principles, and enables studies of $e$-ph coupling and charge transport in PE materials. △ Less

Submitted 19 February, 2020; originally announced February 2020.

Journal ref: Phys. Rev. Lett. 125, 136602 (2020)

Perturbo: a software package for ab initio electron-phonon interactions, charge transport and ultrafast dynamics

Authors: Jin-Jian Zhou, Jinsoo Park, I-Te Lu, Ivan Maliyov, Xiao Tong, Marco Bernardi

Abstract: Perturbo is a software package for first-principles calculations of charge transport and ultrafast carrier dynamics in materials. The current version focuses on electron-phonon interactions and can compute phonon-limited transport properties such as the conductivity, carrier mobility and Seebeck coefficient. It can also simulate the ultrafast nonequilibrium electron dynamics in the presence of ele… ▽ More Perturbo is a software package for first-principles calculations of charge transport and ultrafast carrier dynamics in materials. The current version focuses on electron-phonon interactions and can compute phonon-limited transport properties such as the conductivity, carrier mobility and Seebeck coefficient. It can also simulate the ultrafast nonequilibrium electron dynamics in the presence of electron-phonon scattering. Perturbo uses results from density functional theory and density functional perturbation theory calculations as input, and employs Wannier interpolation to reduce the computational cost. It supports norm-conserving and ultrasoft pseudopotentials, spin-orbit coupling, and polar electron-phonon corrections for bulk and 2D materials. Hybrid MPI plus OpenMP parallelization is implemented to enable efficient calculations on large systems (up to at least 50 atoms) using high-performance computing. Taken together, Perturbo provides efficient and broadly applicable ab initio tools to investigate electron-phonon interactions and carrier dynamics quantitatively in metals, semiconductors, insulators, and 2D materials. △ Less

Submitted 5 February, 2020; originally announced February 2020.

Comments: 17 pages, 8 figures, submitted

Journal ref: Comput. Phys. Commun. 264, 107970 (2021)

Ab initio electron-defect interactions using Wannier functions

Authors: I-Te Lu, Jinsoo Park, Jin-Jian Zhou, Marco Bernardi

Abstract: Computing electron-defect (e-d) interactions from first principles has remained impractical due to computational cost. Here we develop an interpolation scheme based on maximally localized Wannier functions (WFs) to efficiently compute e-d interaction matrix elements. The interpolated matrix elements can accurately reproduce those computed directly without interpolation, and the approach can signif… ▽ More Computing electron-defect (e-d) interactions from first principles has remained impractical due to computational cost. Here we develop an interpolation scheme based on maximally localized Wannier functions (WFs) to efficiently compute e-d interaction matrix elements. The interpolated matrix elements can accurately reproduce those computed directly without interpolation, and the approach can significantly speed up calculations of e-d relaxation times and defect-limited charge transport. We show example calculations of vacancy defects in silicon and copper, for which we compute the e-d relaxation times on fine uniform and random Brillouin zone grids (and for copper, directly on the Fermi surface) as well as the defect-limited resistivity at low temperature. Our interpolation approach opens doors for atomistic calculations of charge carrier dynamics in the presence of defects. △ Less

Submitted 31 October, 2019; originally announced October 2019.

Journal ref: npj Comput. Mater. 6, 17 (2020)

Precise Radiative Lifetimes in Bulk Crystals from First Principles: The Case of Wurtzite GaN

Authors: Vatsal A. Jhalani, Hsiao-Yi Chen, Maurizia Palummo, Marco Bernardi

Abstract: Gallium nitride (GaN) is a key semiconductor for solid-state lighting, but its radiative processes are not fully understood. Here we show a first-principles approach to accurately compute the radiative lifetimes in bulk uniaxial crystals, focusing on wurtzite GaN. Our computed radiative lifetimes are in very good agreement with experiment up to 100 K. We show that taking into account excitons (thr… ▽ More Gallium nitride (GaN) is a key semiconductor for solid-state lighting, but its radiative processes are not fully understood. Here we show a first-principles approach to accurately compute the radiative lifetimes in bulk uniaxial crystals, focusing on wurtzite GaN. Our computed radiative lifetimes are in very good agreement with experiment up to 100 K. We show that taking into account excitons (through the Bethe-Salpeter equation) and spin-orbit coupling to include the exciton fine structure is essential for computing accurate radiative lifetimes. A model for exciton dissociation into free carriers allows us to compute the radiative lifetimes up to room temperature. Our work enables precise radiative lifetime calculations in III-nitrides and other anisotropic solid-state emitters. △ Less

Submitted 8 July, 2020; v1 submitted 26 August, 2019; originally announced August 2019.

Journal ref: J. Phys.: Condens. Matter 32, 084001 (2019)

Elliott-Yafet Spin-Phonon Relaxation Times from First Principles

Authors: Jinsoo Park, Jin-Jian Zhou, Marco Bernardi

Abstract: We present a first-principles approach for computing the phonon-limited $T_1$ spin relaxation time due to the Elliot-Yafet mechanism. Our scheme combines fully-relativistic spin-flip electron-phonon interactions with an approach to compute the effective spin of band electrons in materials with inversion symmetry. We apply our method to silicon and diamond, for which we compute the temperature depe… ▽ More We present a first-principles approach for computing the phonon-limited $T_1$ spin relaxation time due to the Elliot-Yafet mechanism. Our scheme combines fully-relativistic spin-flip electron-phonon interactions with an approach to compute the effective spin of band electrons in materials with inversion symmetry. We apply our method to silicon and diamond, for which we compute the temperature dependence of the spin relaxation times and analyze the contributions to spin relaxation from different phonons and valley processes. The computed spin relaxation times in silicon are in excellent agreement with experiment in the 50$-$300 K temperature range. In diamond, we predict intrinsic spin relaxation times of 540 $μ$s at 77 K and 2.3 $μ$s at 300 K. Our work enables precise predictions of spin-phonon relaxation times in a wide range of materials, providing microscopic insight into spin relaxation and guiding the development of spin-based quantum technologies. △ Less

Submitted 3 June, 2019; originally announced June 2019.

Comments: 6 pages, 3 figures, submitted

Journal ref: Phys. Rev. B 101, 045202 (2020)

Predicting charge transport in the presence of polarons: The beyond-quasiparticle regime in SrTiO$_{\mathrm{3}}$

Authors: Jin-Jian Zhou, Marco Bernardi

Abstract: In materials with strong electron-phonon ($e$-ph) interactions, the electrons carry a phonon cloud during their motion, forming quasiparticles known as polarons. Predicting charge transport and its temperature dependence in the polaron regime remains an open challenge. Here, we present first-principles calculations of charge transport in a prototypical material with large polarons, SrTiO$_{3}$. Us… ▽ More In materials with strong electron-phonon ($e$-ph) interactions, the electrons carry a phonon cloud during their motion, forming quasiparticles known as polarons. Predicting charge transport and its temperature dependence in the polaron regime remains an open challenge. Here, we present first-principles calculations of charge transport in a prototypical material with large polarons, SrTiO$_{3}$. Using a cumulant diagram-resummation technique that can capture the strong $e$-ph interactions, our calculations can accurately predict the experimental electron mobility in SrTiO$_{3}$ between 150$-$300 K. They further reveal that for increasing temperature the charge transport mechanism transitions from band-like conduction, in which the scattering of renormalized quasiparticles is dominant, to a beyond-quasiparticle transport regime governed by incoherent contributions due to the interactions between the electrons and their phonon cloud. Our work reveals long-sought microscopic details of charge transport in SrTiO$_{3}$, and provides a broadly applicable method for predicting charge transport in materials with strong $e$-ph interactions and polarons. △ Less

Submitted 2 December, 2019; v1 submitted 8 May, 2019; originally announced May 2019.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Research 1, 033138 (2019)

Next-to-Leading Order Ab Initio Electron-Phonon Scattering

Authors: Nien-En Lee, Jin-Jian Zhou, Hsiao-Yi Chen, Marco Bernardi

Abstract: Electron-phonon (e-ph) interactions are usually treated in the lowest order of perturbation theory. Here we derive next-to-leading order e-ph interactions, and compute from first principles the associated two-phonon e-ph scattering rates. The derivation involves Matsubara sums of the relevant two-loop Feynman diagrams, and the numerical calculations are challenging since they involve Brillouin zon… ▽ More Electron-phonon (e-ph) interactions are usually treated in the lowest order of perturbation theory. Here we derive next-to-leading order e-ph interactions, and compute from first principles the associated two-phonon e-ph scattering rates. The derivation involves Matsubara sums of the relevant two-loop Feynman diagrams, and the numerical calculations are challenging since they involve Brillouin zone integrals over two crystal momenta and depend critically on the intermediate state lifetimes. Using random grids and Monte Carlo integration, together with a self-consistent update of the intermediate state lifetimes, we compute and converge the two-phonon scattering rates, using GaAs as a case study. For the longitudinal optical phonon in GaAs, we find that the two-phonon scattering rates are as large as nearly half the value of the leading-order rates. The energy and temperature dependence of the two-phonon processes are analyzed. We show that including the two-phonon processes is important to accurately predicting the electron mobility in GaAs. △ Less

Submitted 19 March, 2019; originally announced March 2019.

Comments: 5 pages, 5 figures

Journal ref: Nat. Commun. 11, 1607 (2020)

Ab Initio Calculations of Exciton Radiative Lifetimes in Bulk Crystals, Nanostructures and Molecules

Authors: Hsiao-Yi Chen, Vatsal A. Jhalani, Maurizia Palummo, Marco Bernardi

Abstract: Excitons are bound electron-hole pairs that dominate the optical response of semiconductors and insulators, especially in materials where the Coulomb interaction is weakly screened. Light absorption (including excitonic effects) has been studied extensively using first-principles calculations, but methods for computing radiative recombination and light emission are still being developed. Here we s… ▽ More Excitons are bound electron-hole pairs that dominate the optical response of semiconductors and insulators, especially in materials where the Coulomb interaction is weakly screened. Light absorption (including excitonic effects) has been studied extensively using first-principles calculations, but methods for computing radiative recombination and light emission are still being developed. Here we show a unified ab initio approach to compute exciton radiative recombination in materials ranging from bulk crystals to nanostructures and molecules. We derive the rate of exciton radiative recombination in bulk crystals, isolated systems, and in one- and two-dimensional materials, using Fermi's golden rule within the Bethe-Salpeter equation approach. We present benchmark calculations of radiative lifetimes in a GaAs crystal and in gas-phase organic molecules. Our work provides a general method for studying exciton recombination and light emission in bulk, nanostructured and molecular materials from first principles. △ Less

Submitted 26 July, 2019; v1 submitted 25 January, 2019; originally announced January 2019.

Journal ref: Phys. Rev. B 100, 075135 (2019)

Efficient Ab Initio Calculations of Electron-Defect Scattering and Defect-Limited Carrier Mobility

Authors: I-Te Lu, Jin-Jian Zhou, Marco Bernardi

Abstract: Electron-defect ($e$-d) interactions govern charge carrier dynamics at low temperature, where they limit the carrier mobility and give rise to phenomena of broad relevance in condensed matter physics. Ab initio calculations of $e$-d interactions are still in their infancy, mainly because they require large supercells and computationally expensive workflows. Here we develop an efficient ab initio a… ▽ More Electron-defect ($e$-d) interactions govern charge carrier dynamics at low temperature, where they limit the carrier mobility and give rise to phenomena of broad relevance in condensed matter physics. Ab initio calculations of $e$-d interactions are still in their infancy, mainly because they require large supercells and computationally expensive workflows. Here we develop an efficient ab initio approach for computing elastic $e$-d interactions, their associated $e$-d relaxation times (RTs), and the low-temperature defect-limited carrier mobility. The method is applied to silicon with simple neutral defects, such as vacancies and interstitials. Contrary to conventional wisdom, the computed $e$-d RTs depend strongly on carrier energy and defect type, and the defect-limited mobility is temperature dependent. These results highlight the shortcomings of widely employed heuristic models of $e$-d interactions in materials. Our method opens new avenues for studying $e$-d scattering and low-temperature charge transport from first principles. △ Less

Submitted 10 January, 2019; originally announced January 2019.

Comments: 11 pages, 5 figures, submitted

Journal ref: Phys. Rev. Materials 3, 033804 (2019)

Physical Origin of the One-Quarter Exact Exchange in Density Functional Theory

Authors: Marco Bernardi

Abstract: Exchange interactions are a manifestation of the quantum mechanical nature of the electrons and play a key role in predicting the properties of materials from first principles. In density functional theory (DFT), a widely used approximation to the exchange energy combines fractions of density-based and Hartree-Fock (exact) exchange. This so-called hybrid DFT scheme is accurate in many materials, f… ▽ More Exchange interactions are a manifestation of the quantum mechanical nature of the electrons and play a key role in predicting the properties of materials from first principles. In density functional theory (DFT), a widely used approximation to the exchange energy combines fractions of density-based and Hartree-Fock (exact) exchange. This so-called hybrid DFT scheme is accurate in many materials, for reasons that are not fully understood. Here we show that a 1/4 fraction of exact exchange plus a 3/4 fraction of density-based exchange is compatible with a correct quantum mechanical treatment of the exchange energy of an electron pair in the unpolarized electron gas. We also show that the 1/4 exact-exchange fraction mimics a correlation interaction between doubly-excited electronic configurations. The relation between our results and trends observed in hybrid DFT calculations is discussed, along with other implications. △ Less

Submitted 25 March, 2020; v1 submitted 4 October, 2018; originally announced October 2018.

Electron-Phonon Scattering in the Presence of Soft Modes and Electron Mobility in SrTiO$_{3}$ Perovskite from First Principles

Authors: Jin-Jian Zhou, Olle Hellman, Marco Bernardi

Abstract: Structural phase transitions and soft phonon modes pose a longstanding challenge to computing electron-phonon (e-ph) interactions in strongly anharmonic crystals. Here we develop a first-principles approach to compute e-ph scattering and charge transport in materials with anharmonic lattice dynamics. Our approach employs renormalized phonons to compute the temperature-dependent e-ph coupling for a… ▽ More Structural phase transitions and soft phonon modes pose a longstanding challenge to computing electron-phonon (e-ph) interactions in strongly anharmonic crystals. Here we develop a first-principles approach to compute e-ph scattering and charge transport in materials with anharmonic lattice dynamics. Our approach employs renormalized phonons to compute the temperature-dependent e-ph coupling for all phonon modes, including the soft modes associated with ferroelectricity and phase transitions. We show that the electron mobility in cubic SrTiO$_{3}$ is controlled by scattering with longitudinal optical phonons at room temperature and with ferroelectric soft phonons below 200~K. Our calculations can accurately predict the temperature dependence of the electron mobility in SrTiO$_{3}$ between 150$-$300~K, and reveal the microscopic origin of its roughly $T^{-3}$ trend. Our approach enables first-principles calculations of e-ph interactions and charge transport in broad classes of crystals with phase transitions and strongly anharmonic phonons. △ Less

Submitted 30 November, 2018; v1 submitted 14 June, 2018; originally announced June 2018.

Comments: 5 pages, 3 figures. Updated to published version

Journal ref: Phys. Rev. Lett. 121, 226603 (2018)

Ab Initio Electron-Phonon Interactions Using Atomic Orbital Wavefunctions

Authors: Luis A. Agapito, Marco Bernardi

Abstract: The interaction between electrons and lattice vibrations determines key physical properties of materials, including their electrical and heat transport, excited electron dynamics, phase transitions, and superconductivity. We present a new ab initio method that employs atomic orbital (AO) wavefunctions to compute the electron-phonon (e-ph) interactions in materials and interpolate the e-ph coupling… ▽ More The interaction between electrons and lattice vibrations determines key physical properties of materials, including their electrical and heat transport, excited electron dynamics, phase transitions, and superconductivity. We present a new ab initio method that employs atomic orbital (AO) wavefunctions to compute the electron-phonon (e-ph) interactions in materials and interpolate the e-ph coupling matrix elements to fine Brillouin zone grids. We detail the numerical implementation of such AO-based e-ph calculations, and benchmark them against direct density functional theory calculations and Wannier function (WF) interpolation. The key advantages of AOs over WFs for e-ph calculations are outlined. Since AOs are fixed basis functions associated with the atoms, they circumvent the need to generate a material-specific localized basis set with a trial-and-error approach, as is needed in WFs. Therefore, AOs are ideal to compute e-ph interactions in chemically and structurally complex materials for which WFs are challenging to generate, and are also promising for high-throughput materials discovery. While our results focus on AOs, the formalism we present generalizes e-ph calculations to arbitrary localized basis sets, with WFs recovered as a special case. △ Less

Submitted 16 March, 2018; originally announced March 2018.

Journal ref: Phys. Rev. B 97, 235146 (2018)

Theory and Ab Initio Computation of the Anisotropic Light Emission in Monolayer Transition Metal Dichalcogenides

Authors: Hsiao-Yi Chen, Maurizia Palummo, Davide Sangalli, Marco Bernardi

Abstract: Monolayer transition metal dichalcogenides (TMDCs) are direct gap semiconductors with unique potential for ultrathin light emitters. Yet, their photoluminescence (PL) is not completely understood. We compute the radiative recombination rate in monolayer TMDCs as a function of photon emission direction and polarization, and obtain polar plots of the PL for different excitation scenarios using the a… ▽ More Monolayer transition metal dichalcogenides (TMDCs) are direct gap semiconductors with unique potential for ultrathin light emitters. Yet, their photoluminescence (PL) is not completely understood. We compute the radiative recombination rate in monolayer TMDCs as a function of photon emission direction and polarization, and obtain polar plots of the PL for different excitation scenarios using the ab initio Bethe-Salpeter equation. We show that excitons in a quantum superposition state of the K and K' inequivalent valleys emit light anisotropically upon recombination. Our results can explain the PL anisotropy and polarization dependence measured in recent experiments, and predict new light emission regimes. When averaged over emission angle and exciton momentum, our new treatment recovers the temperature dependent radiative lifetimes we previously derived. Our work provides a first-principles approach to study light emission in two-dimensional materials. △ Less

Submitted 7 February, 2018; originally announced February 2018.

Charge Transport in Organic Molecular Semiconductors from First Principles: The Band-Like Hole Mobility in Naphthalene Crystal

Authors: Nien-En Lee, Jin-Jian Zhou, Luis A. Agapito, Marco Bernardi

Abstract: Predicting charge transport in organic molecular crystals is notoriously challenging. Carrier mobility calculations in organic semiconductors are dominated by quantum chemistry methods based on charge hopping, which are laborious and only moderately accurate. We compute from first principles the electron-phonon scattering and the phonon-limited hole mobility of naphthalene crystal in the framework… ▽ More Predicting charge transport in organic molecular crystals is notoriously challenging. Carrier mobility calculations in organic semiconductors are dominated by quantum chemistry methods based on charge hopping, which are laborious and only moderately accurate. We compute from first principles the electron-phonon scattering and the phonon-limited hole mobility of naphthalene crystal in the framework of ab initio band theory. Our calculations combine GW electronic bandstructures, ab initio electron-phonon scattering, and the Boltzmann transport equation. The calculated hole mobility is in very good agreement with experiment between 100$-$300 K, and we can predict its temperature dependence with high accuracy. We show that scattering between inter-molecular phonons and holes regulates the mobility, though intra-molecular phonons possess the strongest coupling with holes. We revisit the common belief that only rigid molecular motions affect carrier dynamics in organic molecular crystals. Our work provides a quantitative and rigorous framework to compute charge transport in organic crystals, and is a first step toward reconciling band theory and carrier hopping computational methods. △ Less

Submitted 12 March, 2018; v1 submitted 1 December, 2017; originally announced December 2017.

Comments: 7 pages, 4 figures, Accepted by Phys. Rev. B

Journal ref: Phys. Rev. B 97, 115203 (2018)

Ultrafast Hot Carrier Dynamics in GaN and its Impact on the Efficiency Droop

Authors: Vatsal A. Jhalani, Jin-Jian Zhou, Marco Bernardi

Abstract: GaN is a key material for lighting technology. Yet, the carrier transport and ultrafast dynamics that are central in GaN light emitting devices are not completely understood. We present first-principles calculations of carrier dynamics in GaN, focusing on electron-phonon (e-ph) scattering and the cooling and nanoscale dynamics of hot carriers. We find that e-ph scattering is significantly faster f… ▽ More GaN is a key material for lighting technology. Yet, the carrier transport and ultrafast dynamics that are central in GaN light emitting devices are not completely understood. We present first-principles calculations of carrier dynamics in GaN, focusing on electron-phonon (e-ph) scattering and the cooling and nanoscale dynamics of hot carriers. We find that e-ph scattering is significantly faster for holes compared to electrons, and that for hot carriers with an initial 0.5$-$1 eV excess energy, holes take a significantly shorter time ($\sim$0.1 ps) to relax to the band edge compared to electrons, which take $\sim$1 ps. The asymmetry in the hot carrier dynamics is shown to originate from the valence band degeneracy, the heavier effective mass of holes compared to electrons, and the details of the coupling to different phonon modes in the valence and conduction bands. We show that the slow cooling of hot electrons and their long ballistic mean free paths (over 3 nm) are a possible cause of efficiency droop in GaN light emitting diodes. Taken together, our work sheds light on the ultrafast dynamics of hot carriers in GaN and the nanoscale origin of efficiency droop. △ Less

Submitted 24 July, 2017; v1 submitted 22 March, 2017; originally announced March 2017.

Comments: Submitted, 10 pages, 4 figures

Ab initio Electron Mobility and Polar Phonon Scattering in GaAs

Authors: Jin-Jian Zhou, Marco Bernardi

Abstract: In polar semiconductors and oxides, the long-range nature of the electron-phonon (\textit{e}-ph) interaction is a bottleneck to compute charge transport from first principles. Here, we develop an efficient ab initio scheme to compute and converge the \textit{e}-ph relaxation times (RTs) and electron mobility in polar materials. We apply our approach to GaAs, where using the Boltzmann equation with… ▽ More In polar semiconductors and oxides, the long-range nature of the electron-phonon (\textit{e}-ph) interaction is a bottleneck to compute charge transport from first principles. Here, we develop an efficient ab initio scheme to compute and converge the \textit{e}-ph relaxation times (RTs) and electron mobility in polar materials. We apply our approach to GaAs, where using the Boltzmann equation with state-dependent RTs, we compute mobilities in excellent agreement with experiment at 250$-$500~K. The $e$-ph RTs and the phonon contributions to intravalley and intervalley $e$-ph scattering are also analyzed. Our work enables efficient ab initio computations of transport and carrier dynamics in polar materials. △ Less

Submitted 28 November, 2016; v1 submitted 11 August, 2016; originally announced August 2016.

Comments: 6 pages, 5 figures, Updated to published version

Journal ref: Phys. Rev. B 94, 201201 (2016)

First-principles dynamics of electrons and phonons

Authors: Marco Bernardi

Abstract: First-principles calculations combining density functional theory and many-body perturbation theory can provide microscopic insight into the dynamics of electrons and phonons in materials. We review this theoretical and computational framework, focusing on perturbative treatments of scattering, dynamics and transport of coupled electrons and phonons. We discuss application of these first-principle… ▽ More First-principles calculations combining density functional theory and many-body perturbation theory can provide microscopic insight into the dynamics of electrons and phonons in materials. We review this theoretical and computational framework, focusing on perturbative treatments of scattering, dynamics and transport of coupled electrons and phonons. We discuss application of these first-principles calculations to electronics, lighting, spectroscopy and renewable energy. △ Less

Submitted 30 June, 2016; originally announced July 2016.

Comments: 14 pages, 1 figure

Determination of thermal emission spectra maximizing thermophotovoltaic performance using a genetic algorithm

Authors: John DeSutter, Michael P. Bernardi, Mathieu Francoeur

Abstract: Optimal radiator thermal emission spectra maximizing thermophotovoltaic (TPV) conversion efficiency and output power density are determined when temperature effects in the cell are considered. To do this, a framework is designed in which a TPV model that accounts for radiative, electrical and thermal losses is coupled with a genetic algorithm. The TPV device under study involves a spectrally selec… ▽ More Optimal radiator thermal emission spectra maximizing thermophotovoltaic (TPV) conversion efficiency and output power density are determined when temperature effects in the cell are considered. To do this, a framework is designed in which a TPV model that accounts for radiative, electrical and thermal losses is coupled with a genetic algorithm. The TPV device under study involves a spectrally selective radiator at a temperature of 2000 K, a gallium antimonide cell, and a cell thermal management system characterized by a fluid temperature and a heat transfer coefficient of 293 K and 600 Wm-2K-1. It is shown that a maximum conversion efficiency of 38.8% is achievable with an emission spectrum that has emissivity of unity between 0.719 eV and 0.763 eV and zero elsewhere. This optimal spectrum is less than half of the width of those when thermal losses are neglected. A maximum output power density of 41708 Wm-2 is achievable with a spectrum having emissivity values of unity between 0.684 eV and 1.082 eV and zero elsewhere when thermal losses are accounted for. These emission spectra are shown to greatly outperform blackbody and tungsten radiators, and could be obtained using artificial structures such as metamaterials or photonic crystals. △ Less

Submitted 3 September, 2015; originally announced September 2015.

Comments: 33 pages, 8 figures

Journal ref: Energy Conversion and Management 108 (2016) 429-438

Impacts of propagating, frustrated and surface modes on radiative, electrical and thermal losses in nanoscale-gap thermophotovoltaic power generators

Authors: Michael P. Bernardi, Olivier Dupré, Etienne Blandre, Pierre-Olivier Chapuis, Rodolphe Vaillon, Mathieu Francoeur

Abstract: The impacts of radiative, electrical and thermal losses on the power output enhancement of nanoscale-gap thermophotovoltaic (nano-TPV) power generators consisting of a gallium antimonide cell paired with a broadband tungsten and a radiatively-optimized Drude radiator are analyzed. Results reveal that surface mode mediated nano-TPV power generation with the Drude radiator outperforms the tungsten e… ▽ More The impacts of radiative, electrical and thermal losses on the power output enhancement of nanoscale-gap thermophotovoltaic (nano-TPV) power generators consisting of a gallium antimonide cell paired with a broadband tungsten and a radiatively-optimized Drude radiator are analyzed. Results reveal that surface mode mediated nano-TPV power generation with the Drude radiator outperforms the tungsten emitter, dominated by frustrated modes, only for a vacuum gap thickness of 10 nm and if both electrical and thermal losses are neglected. The key limiting factors for the Drude and tungsten-based devices are respectively the recombination of electron-hole pairs at the cell surface and thermalization of radiation with energy larger than the absorption bandgap. In a nano-TPV power generator cooled by convection with a fluid at 293 K and a heat transfer coefficient of 10^4 Wm^-2K^-1, power output enhancements of 4.69 and 1.89 are obtained for the tungsten and Drude radiators, respectively, when a realistic vacuum gap thickness of 100 nm is considered. A design guideline is also proposed where a high energy cutoff above which radiation has a net negative effect on nano-TPV power output is determined. This work demonstrates that design and optimization of nano-TPV devices must account for radiative, electrical and thermal losses. △ Less

Submitted 5 February, 2015; v1 submitted 18 September, 2013; originally announced September 2013.

Journal ref: Scientific Reports 5, 11626 (2015)

Semiconducting Monolayer Materials as a Tunable Platform for Excitonic Solar Cells

Authors: Marco Bernardi, Maurizia Palummo, Jeffrey C. Grossman

Abstract: The recent advent of two-dimensional monolayer materials with tunable optoelectronic properties and high carrier mobility offers renewed opportunities for efficient, ultra-thin excitonic solar cells alternative to those based on conjugated polymer and small molecule donors. Using first-principles density functional theory and many-body calculations, we demonstrate that monolayers of hexagonal BN a… ▽ More The recent advent of two-dimensional monolayer materials with tunable optoelectronic properties and high carrier mobility offers renewed opportunities for efficient, ultra-thin excitonic solar cells alternative to those based on conjugated polymer and small molecule donors. Using first-principles density functional theory and many-body calculations, we demonstrate that monolayers of hexagonal BN and graphene (CBN) combined with commonly used acceptors such as PCBM fullerene or semiconducting carbon nanotubes can provide excitonic solar cells with tunable absorber gap, donor-acceptor interface band alignment, and power conversion efficiency, as well as novel device architectures. For the case of CBN-PCBM devices, we predict the limit of power conversion efficiencies to be in the 10 - 20% range depending on the CBN monolayer structure. Our results demonstrate the possibility of using monolayer materials in tunable, efficient, polymer-free thin-film solar cells in which unexplored exciton and carrier transport regimes are at play. △ Less

Submitted 24 June, 2012; originally announced June 2012.

Comments: 7 pages, 5 figures

Nanocarbon-Based photovoltaics

Authors: Marco Bernardi, Jessica Lohrman, Priyank V. Kumar, Alec Kirkeminde, Nicola Ferralis, Jeffrey C. Grossman, Shenqiang Ren

Abstract: Carbon materials are excellent candidates for photovoltaic solar cells: they are Earth-abundant, possess high optical absorption, and superior thermal and photostability. Here we report on solar cells with active layers made solely of carbon nanomaterials that present the same advantages of conjugated polymer-based solar cells - namely solution processable, potentially flexible, and chemically tun… ▽ More Carbon materials are excellent candidates for photovoltaic solar cells: they are Earth-abundant, possess high optical absorption, and superior thermal and photostability. Here we report on solar cells with active layers made solely of carbon nanomaterials that present the same advantages of conjugated polymer-based solar cells - namely solution processable, potentially flexible, and chemically tunable - but with significantly increased photostability and the possibility to revert photodegradation. The device active layer composition is optimized using ab-initio density functional theory calculations to predict type-II band alignment and Schottky barrier formation. The best device fabricated is composed of PC70BM fullerene, semiconducting single-walled carbon nanotubes and reduced graphene oxide. It achieves a power conversion efficiency of 1.3% - a record for solar cells based on carbon as the active material - and shows significantly improved lifetime than a polymer-based device. We calculate efficiency limits of up to 13% for the devices fabricated in this work, comparable to those predicted for polymer solar cells. There is great promise for improving carbon-based solar cells considering the novelty of this type of device, the superior photostability, and the availability of a large number of carbon materials with yet untapped potential for photovoltaics. Our results indicate a new strategy for efficient carbon-based, solution-processable, thin film, photostable solar cells. △ Less

Submitted 24 July, 2012; v1 submitted 21 June, 2012; originally announced June 2012.

Optoelectronic Properties and Excitons in Hybridized Boron Nitride and Graphene Hexagonal Monolayers

Authors: Marco Bernardi, Maurizia Palummo, Jeffrey C. Grossman

Abstract: We explain the nature of the electronic band gap and optical absorption spectrum of Carbon - Boron Nitride (CBN) hybridized monolayers using density functional theory (DFT), GW and Bethe-Salpeter equation calculations. The CBN optoelectronic properties result from the overall monolayer bandstructure, whose quasiparticle states are controlled by the C domain size and lie at separate energy for C an… ▽ More We explain the nature of the electronic band gap and optical absorption spectrum of Carbon - Boron Nitride (CBN) hybridized monolayers using density functional theory (DFT), GW and Bethe-Salpeter equation calculations. The CBN optoelectronic properties result from the overall monolayer bandstructure, whose quasiparticle states are controlled by the C domain size and lie at separate energy for C and BN without significant mixing at the band edge, as confirmed by the presence of strongly bound bright exciton states localized within the C domains. The resulting absorption spectra show two marked peaks whose energy and relative intensity vary with composition in agreement with the experiment, with large compensating quasiparticle and excitonic corrections compared to DFT calculations. The band gap and the optical absorption are not regulated by the monolayer composition as customary for bulk semiconductor alloys and cannot be understood as a superposition of the properties of bulk-like C and BN domains as recent experiments suggested. △ Less

Submitted 6 April, 2012; originally announced April 2012.

Journal ref: Phys. Rev. Lett. 108 (2012), 226805