Showing 1–50 of 122 results for author: Bhattacharyya, A

Exploring Superconductivity in Ba$_{3}$Ir$_{4}$Ge$_{16}$: Experimental and Theoretical Insights

Authors: A. Bhattacharyya, D. T. Adroja A. K. Jana, K. Panda, P. P. Ferreira, Y. Zhao, T. Ying, H. Hosono, T. T. Dorini, L. T. F. Eleno, P. K. Biswas, G. Stenning, R. Tripathi, Y. Qi

Abstract: We explore both experimental and theoretical aspects of the superconducting properties in the distinctive layered caged compound, Ba$_{3}$Ir$_{4}$Ge$_{16}$. Our approach integrates muon spin rotation and relaxation ($μ$SR) measurements with magnetization and heat capacity experiments, accompanied by first-principle calculations. The compound's bulk superconductivity is unequivocally established th… ▽ More We explore both experimental and theoretical aspects of the superconducting properties in the distinctive layered caged compound, Ba$_{3}$Ir$_{4}$Ge$_{16}$. Our approach integrates muon spin rotation and relaxation ($μ$SR) measurements with magnetization and heat capacity experiments, accompanied by first-principle calculations. The compound's bulk superconductivity is unequivocally established through DC magnetization measurements, revealing a critical temperature ($T_\mathrm{C}$) of 5.7 K. A noteworthy characteristic observed in the low-temperature superfluid density is its saturating behavior, aligning with the features typical of conventional Bardeen-Cooper-Schrieffer (BCS) superconductors. The assessment of moderate electron-phonon coupling superconductivity is conducted through transverse field $μ$SR measurements, yielding a superconducting gap to $T_\mathrm{C}$ ratio ($2Δ(0)/k_\mathrm{B}T_\mathrm{C}$) of 4.04, a value corroborated by heat capacity measurements. Crucially, zero field $μ$SR measurements dismiss the possibility of any spontaneous magnetic field emergence below $T_\mathrm{C}$, highlighting the preservation of time-reversal symmetry. Our experimental results are reinforced by first-principles density functional calculations, underscoring the intricate interplay between crystal structure and superconducting order parameter symmetry in polyhedral caged compounds. This comprehensive investigation enhances our understanding of the nuanced relationship between crystal structure and superconductivity in such unique compounds. △ Less

Submitted 26 June, 2024; originally announced June 2024.

Journal ref: Journal of Alloys and Compounds 978, 173374 (2024)

Probing the superconducting gap structure of ScRuSi via $μ$SR and first-principles calculations

Authors: K. Panda, A. Bhattacharyya, P. N. Ferreira, Rajib Mondal, A. Thamizhavel, D. T. Adroja, C. Heil, L. T. F. Eleno, A. D. Hillier

Abstract: In this study, we present a thorough investigation into the superconducting state of the ruthenium-based ternary equiatomic compound ScRuSi. Our analysis combines experimental techniques, including muon spin rotation/relaxation ($μ$SR) and low-temperature resistivity measurements, with theoretical insights derived from first-principles calculations. The low-temperature resistivity measurements rev… ▽ More In this study, we present a thorough investigation into the superconducting state of the ruthenium-based ternary equiatomic compound ScRuSi. Our analysis combines experimental techniques, including muon spin rotation/relaxation ($μ$SR) and low-temperature resistivity measurements, with theoretical insights derived from first-principles calculations. The low-temperature resistivity measurements reveal a distinct superconducting phase transition in the orthorhombic structure of ScRuSi at a critical temperature ($T_\text{C}$) of $2.5$ K. Further, the TF-$μ$SR analysis yields a gap-to-critical-temperature ratio of $2Δ/k_\mathrm{B}T_\mathrm{C} = 2.71$, a value consistent with results obtained from previous heat capacity measurements. The temperature dependence of the superconducting normalized depolarization rate is fully described by the isotropic $s$-wave gap model. Additionally, zero-field $μ$SR measurements indicate that the relaxation rate remains nearly identical below and above $T_\text{C}$. This observation strongly suggests the preservation of time-reversal symmetry within the superconducting state. By employing the McMillan-Allen-Dynes equation, we calculate a $T_\text{C}$ of $2.11$ K from first-principles calculations within the density functional theory framework. This calculated value aligns closely with the experimentally determined critical temperature. The coupling between the low-frequency phonon modes and the transition metal d-orbital states play an important role in governing the superconducting pairing in ScRuSi. The combination of experimental and theoretical approaches provides a comprehensive microscopic understanding of the superconducting nature of ScRuSi, offering insights into its critical temperature, pairing symmetry, and the underlying electron-phonon coupling mechanism. △ Less

Submitted 26 June, 2024; originally announced June 2024.

Comments: 10 pages, 7 figures

Journal ref: Physical Review B 109, 224517 (2024)

Symmetry Resolution in non-Lorentzian Field Theories

Authors: Aritra Banerjee, Rudranil Basu, Arpan Bhattacharyya, Nilachal Chakrabarti

Abstract: Starting from the computation of Symmetry Resolved Entanglement Entropy (SREE) for boosted intervals in a two dimensional Conformal Field Theory, we compute the same in various non-Lorentzian limits, viz, Galilean and Carrollian Conformal Field Theory in same number of dimensions. We approach the problem both from a limiting perspective and by using intrinsic symmetries of respective non-Lorentzia… ▽ More Starting from the computation of Symmetry Resolved Entanglement Entropy (SREE) for boosted intervals in a two dimensional Conformal Field Theory, we compute the same in various non-Lorentzian limits, viz, Galilean and Carrollian Conformal Field Theory in same number of dimensions. We approach the problem both from a limiting perspective and by using intrinsic symmetries of respective non-Lorentzian conformal algebras. In particular, we calculate the leading order terms, logarithmic terms, and the $\mathcal{O}(1)$ terms and explicitly show exact compliance with $\textit{equipartition of entanglement}$, even in the non-Lorentzian system. Keeping in mind the holographic origin of SREE for the Carrollian limit, we further compute SREE for BMS$_{3}$-Kac-Moody, which couples a $U(1)\times U(1)$ theory with bulk gravity. △ Less

Submitted 3 June, 2024; v1 submitted 2 April, 2024; originally announced April 2024.

Comments: 38 pages, typos corrected, references updated, changes made in the section 4 and 6 regarding SREE for GCFT and BMS, conclusion remains unchanged, updated version to appear in JHEP

Journal ref: JHEP 06 (2024) 121

Utilizing (Al, Ga)2O3/Ga2O3 superlattices to measure cation vacancy diffusion and vacancy-concentration-dependent diffusion of Al, Sn, and Fe in \b{eta} -Ga2O3

Authors: Nathan D. Rock, Haobo Yang, Brian Eisner, Aviva Levin, Arkka Bhattacharyya, Sriram Krishnamoorthy, Praneeth Ranga, Michael A Walker, Larry Wang, Ming Kit Cheng, Wei Zhao, Michael A. Scarpulla

Abstract: Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated. We used aluminum-gallium oxide/gallium oxide superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O… ▽ More Diffusion of native defects such as vacancies and their interactions with impurities are fundamental in semiconductor crystal growth, device processing, and long-term aging of equilibration and transient diffusion of vacancies are rarely investigated. We used aluminum-gallium oxide/gallium oxide superlattices (SLs) to detect and analyze transient diffusion of cation vacancies during annealing in O2 at 1000-1100 C. Using a novel finite difference scheme for the diffusion equation with time- and space-varying diffusion constant, we extract diffusion constants for Al, Fe, and cation vacancies under the given conditions, including the vacancy concentration dependence for Al. indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on Sn-doped beta-gallium oxide substrates, gradients observed in the extent of Al diffusion indicate that vacancies present in the substrate transiently diffuse through the SLs, interacting with Sn as it also diffuses. In the case of SLs grown on (010) Fe-doped substrates, the Al diffusion is uniform through the SLs, indicating a depth-uniform concentration of vacancies. We find no evidence in either case for the introduction of gallium vacancies from the free surface at rates sufficient to affect Al diffusion down to ppm concentrations, which has important bearing on the validity of typically-made assumptions of vacancy equilibration. Additionally, we show that unintentional impurities in Sn-doped gallium oxide such as Fe, Ni, Mn, Cu, and Li also diffuse towards the surface and accumulate. Many of these likely have fast interstitial diffusion modes capable of destabilizing devices over time, thus highlighting the importance of controlling unintentional impurities in beta-gallium oxide wafers. △ Less

Submitted 25 March, 2024; originally announced March 2024.

Comments: 11 pages, 4 figures, references a supplimental which will be submitted seperately

Kibble-Zurek mechanism and errors of gapped quantum phases

Authors: Amit Jamadagni, Javad Kazemi, Arpan Bhattacharyya

Abstract: Kibble-Zurek mechanism relates the domain of non-equilibrium dynamics with the critical properties at equilibrium. It establishes a power law connection between non-equilibrium defects quenched through a continuous phase transition and the quench rate via the scaling exponent. We present a novel numerical scheme to estimate the scaling exponent wherein the notion of defects is mapped to errors, pr… ▽ More Kibble-Zurek mechanism relates the domain of non-equilibrium dynamics with the critical properties at equilibrium. It establishes a power law connection between non-equilibrium defects quenched through a continuous phase transition and the quench rate via the scaling exponent. We present a novel numerical scheme to estimate the scaling exponent wherein the notion of defects is mapped to errors, previously introduced to quantify a variety of gapped quantum phases. To demonstrate the versatility of our method we conduct numerical experiments across a broad spectrum of spin-half models hosting local and symmetry protected topological order. Furthermore, an implementation of the quench dynamics featuring a topological phase transition on a digital quantum computer is proposed to quantify the associated criticality. △ Less

Submitted 16 June, 2024; v1 submitted 24 January, 2024; originally announced January 2024.

Comments: 20 pages, 18 figures. Expanded to include new analysis. Comments are welcome

Journal ref: Phys. Rev. B 110, 045140 (2024)

Kerr-type nonlinear baths enhance cooling in quantum refrigerators

Authors: Tanaya Ray, Sayan Mondal, Aparajita Bhattacharyya, Ahana Ghoshal, Debraj Rakshit, Ujjwal Sen

Abstract: We study the self-contained three-qubit quantum refrigerator, with a three-body interaction enabling cooling of the target qubit, in presence of baths composed of anharmonic quantum oscillators with Kerr-type nonlinearity. We show that such baths, locally connected to the three qubits, opens up the opportunity to implement superior steady-state cooling compared to using harmonic oscillator baths,… ▽ More We study the self-contained three-qubit quantum refrigerator, with a three-body interaction enabling cooling of the target qubit, in presence of baths composed of anharmonic quantum oscillators with Kerr-type nonlinearity. We show that such baths, locally connected to the three qubits, opens up the opportunity to implement superior steady-state cooling compared to using harmonic oscillator baths, aiding in access to the free energy required for empowering the refrigerator function autonomously. We find that in spite of providing significant primacy in steady-state cooling, such anharmonic baths do not impart much edge over using harmonic oscillator baths if one targets transient cooling. However, we gain access to steady-state cooling in the parameter region where only transient cooling could be achieved by using harmonic baths. Subsequently, we also study the scaling of steady-state cooling advantage and the minimum attainable temperature for varying levels of anharmonicity present in the bath oscillators. Finally, we analyse heat currents and coefficients of performance of quantum refrigerators using bath modes involving Kerr-type nonlinearity, and present a comparison with the case of using bosonic baths made of simple harmonic oscillators. On the way, we derive the decay rates in the Gorini-Kossakowski-Sudarshan-Lindblad quantum master equation for Kerr-type anharmonic oscillator baths. △ Less

Submitted 17 November, 2023; originally announced November 2023.

Comments: 10 pages, 5 figures

Aspects of $T\bar{T}+J\bar{T }$ deformed 2D topological gravity : from partition function to late-time SFF

Authors: Arpan Bhattacharyya, Saptaswa Ghosh, Sounak Pal

Abstract: In this paper, we investigate different thermodynamic properties of $T\bar{T}+J\bar{T }$ deformed 2D-gravity. First, we compute the partition function of $U(1)$ coupled 2D-gravity with fixed chemical potential, obtained from the dimensional reduction of the four-dimensional Einstein-Maxwell theory. Then, we compute the partition function of the deformed theory and study the genus expansion of the… ▽ More In this paper, we investigate different thermodynamic properties of $T\bar{T}+J\bar{T }$ deformed 2D-gravity. First, we compute the partition function of $U(1)$ coupled 2D-gravity with fixed chemical potential, obtained from the dimensional reduction of the four-dimensional Einstein-Maxwell theory. Then, we compute the partition function of the deformed theory and study the genus expansion of the one and two-point correlation function of the partition function of the theory. Subsequently, we use the one-point function to compute the ``Annealed'' and ``Quenched'' free energy in low-temperature limits and make a qualitative comparison with the undeformed theory. Then, using the two-point function, we compute the Spectral Form Factor of the deformed theory in early and late time. We find a dip and ramp structure in early and late time, respectively. We also get a plateau structure in the $τ$-scaling limit. Last but not least, we comment on the late-time topology change to give a physical interpretation of the ramp of the Spectral Form Factor for our theory. △ Less

Submitted 1 January, 2024; v1 submitted 28 September, 2023; originally announced September 2023.

Comments: v2: 44 pages, 9 figures, main text modified, conclusions remain unchanged, references updated

Modified Landauer's principle: How much can the Maxwell's demon gain by using general system-environment quantum state?

Authors: Sayan Mondal, Aparajita Bhattacharyya, Ahana Ghoshal, Ujjwal Sen

Abstract: The Landauer principle states that decrease in entropy of a system, inevitably leads to a dissipation of heat to the environment. This statement is usually established by considering the system to be in contact with an environment that is initially in a thermal state with the system-environment initial state being in a product state. Here we show that a modified Landauer principle, with correction… ▽ More The Landauer principle states that decrease in entropy of a system, inevitably leads to a dissipation of heat to the environment. This statement is usually established by considering the system to be in contact with an environment that is initially in a thermal state with the system-environment initial state being in a product state. Here we show that a modified Landauer principle, with correction terms, still holds even if the system and environment are initially correlated and the environment is in an athermal state. Furthermore, we consider a case where the system is in contact with a large athermal environment, such that the system dynamics allow Born-Markov approximations, and we derive the finite-time modified Landauer's bound for the same. △ Less

Submitted 18 September, 2023; originally announced September 2023.

Comments: 10 pages, 4 figures

Sensitivity in Nanomechanical Pedestal MEMS Cantilever

Authors: Abhay K. Rajak, Ritambhara Dash, Ashwini Kumari, A. S. Bhattacharyya

Abstract: Nanomechanical resonator-based sensing devices are used in medical diagnostics based on their high-frequency dynamic behavior. Cantilevers fall into the category of Nanomechanical resonators. It also resembles a resonator whose shape is like that of a nanowire clamped at one end. As the surface-to-volume ratio of a nanowire resonator increases due to scaling down, surface stress plays a crucial ro… ▽ More Nanomechanical resonator-based sensing devices are used in medical diagnostics based on their high-frequency dynamic behavior. Cantilevers fall into the category of Nanomechanical resonators. It also resembles a resonator whose shape is like that of a nanowire clamped at one end. As the surface-to-volume ratio of a nanowire resonator increases due to scaling down, surface stress plays a crucial role in the mechanical behavior of a resonator. Piezoresistive MEMS cantilevers are used for vapor phase analysis of volatile compounds and gas. Studies were done to address the mass sensitivity issues and fractures associated with bioceramic and nanocomposite coatings-based cantilever resonators. The studies show how the sensing performance can be determined or tuned. Nanomechanical studies of thin films of SiCN on silicon were performed. The sharpness of the tip was found to have an influence on the tip-sample conduction mechanism useful for MEMS applications △ Less

Submitted 4 August, 2023; originally announced August 2023.

Comments: 16 pages, 6 Figures

Report number: MTCOMM_107891

Journal ref: Materials Today Communications. 2023

Superconducting Gap Structure of Filled Skutterudite LaOs$_4$As$_{12}$ Compound through $μ$SR Investigations

Authors: A. Bhattacharyya, D. T. Adroja, A. D. Hillier, P. K. Biswas

Abstract: Filled skutterudite compounds have gained attention recently as an innovative platforms for studying intriguing low-temperature superconducting properties. Regarding the symmetry of the superconducting gap, contradicting findings from several experiments have been made for LaRu$_{4}$As$_{12}$ and its isoelectronic counterpart, LaOs$_{4}$As$_{12}$. In this vein, we report comprehensive bulk and mic… ▽ More Filled skutterudite compounds have gained attention recently as an innovative platforms for studying intriguing low-temperature superconducting properties. Regarding the symmetry of the superconducting gap, contradicting findings from several experiments have been made for LaRu$_{4}$As$_{12}$ and its isoelectronic counterpart, LaOs$_{4}$As$_{12}$. In this vein, we report comprehensive bulk and microscopic results on LaOs$_{4}$As$_{12}$ utilizing specific heat analysis and muon-spin rotation/relaxation ($μ$SR) measurements. Bulk superconductivity with $T_C$ = 3.2 K was confirmed by heat capacity. The superconducting ground state of the filled-skutterudite LaOs$_{4}$As$_{12}$ compound is found to have two key characteristics: superfluid density exhibits saturation type behavior at low temperature, which points to a fully gapped superconductivity with gap value of $2Δ/k_BT_C$ = 3.26; additionally, the superconducting state does not show any sign of spontaneous magnetic field, supporting the preservation of time-reversal symmetry. These results open the door for the development of La-based skutterudites as special probes for examining the interplay of single- and multiband superconductivity in classical electron-phonon systems. △ Less

Submitted 8 July, 2023; originally announced July 2023.

Comments: 5 pages, 4 figures

Journal ref: Magnetochemistry 2023, 9(5), 117

Operator growth and Krylov Complexity in Bose-Hubbard Model

Authors: Arpan Bhattacharyya, Debodirna Ghosh, Poulami Nandi

Abstract: We study Krylov complexity of a one-dimensional Bosonic system, the celebrated Bose-Hubbard Model. The Bose-Hubbard Hamiltonian consists of interacting bosons on a lattice, describing ultra-cold atoms. Apart from showing superfluid-Mott insulator phase transition, the model also exhibits both chaotic and integrable (mixed) dynamics depending on the value of the interaction parameter. We focus on t… ▽ More We study Krylov complexity of a one-dimensional Bosonic system, the celebrated Bose-Hubbard Model. The Bose-Hubbard Hamiltonian consists of interacting bosons on a lattice, describing ultra-cold atoms. Apart from showing superfluid-Mott insulator phase transition, the model also exhibits both chaotic and integrable (mixed) dynamics depending on the value of the interaction parameter. We focus on the three-site Bose Hubbard Model (with different particle numbers), which is known to be highly mixed. We use the Lanczos algorithm to find the Lanczos coefficients and the Krylov basis. The orthonormal Krylov basis captures the operator growth for a system with a given Hamiltonian. However, the Lanczos algorithm needs to be modified for our case due to the instabilities instilled by the piling up of computational errors. Next, we compute the Krylov complexity and its early and late-time behaviour. Our results capture the chaotic and integrable nature of the system. Our paper takes the first step to use the Lanczos algorithm non-perturbatively for a discrete quartic bosonic Hamiltonian without depending on the auto-correlation method. △ Less

Submitted 1 January, 2024; v1 submitted 8 June, 2023; originally announced June 2023.

Comments: 17 pages, 4 figures

Journal ref: JHEP 12 (2023) 112

Quantum state complexity meets many-body scars

Authors: Sourav Nandy, Bhaskar Mukherjee, Arpan Bhattacharyya, Aritra Banerjee

Abstract: Scar eigenstates in a many-body system refers to a small subset of non-thermal finite energy density eigenstates embedded into an otherwise thermal spectrum. This novel non-thermal behaviour has been seen in recent experiments simulating a one-dimensional PXP model with a kinetically-constrained local Hilbert space realized by a chain of Rydberg atoms. We probe these small sets of special eigensta… ▽ More Scar eigenstates in a many-body system refers to a small subset of non-thermal finite energy density eigenstates embedded into an otherwise thermal spectrum. This novel non-thermal behaviour has been seen in recent experiments simulating a one-dimensional PXP model with a kinetically-constrained local Hilbert space realized by a chain of Rydberg atoms. We probe these small sets of special eigenstates starting from particular initial states by computing the spread complexity associated to time evolution of the PXP hamiltonian. Since the scar subspace in this model is embedded only loosely, the scar states form a weakly broken representation of the Lie Algebra. We demonstrate why a careful usage of the Forward Scattering Approximation (or similar strategies thereof) is required to extract an appropriate set of Lanczos coefficients in this case as the consequence of this approximate symmetry. This leads to a well defined notion of a closed Krylov subspace and consequently, that of spread complexity. We show how the spread complexity shows approximate revivals starting from both $|\mathbb{Z}_2\rangle$ and $|\mathbb{Z}_3\rangle$ states and how these revivals can be made more accurate by adding optimal perturbations to the bare Hamiltonian. We also investigate the case of the vacuum as the initial state, where revivals can be stabilized using an iterative process of adding few-body terms. △ Less

Submitted 16 May, 2023; originally announced May 2023.

Comments: 19 pages, 11 figures

Journal ref: J. Phys.: Condens. Matter 36, 155601 (2024)

Enhancing the Electron Mobility in Si-doped (010) $β$-Ga$_2$O$_3$ films with Low-Temperature Buffer Layers

Authors: Arkka Bhattacharyya, Carl Peterson, Takeki Itoh, Saurav Roy, Jacqueline Cooke, Steve Rebollo, Praneeth Ranga, Berardi Sensale-Rodriguez, Sriram Krishnamoorthy

Abstract: We demonstrate a new substrate cleaning and buffer growth scheme in $β$-Ga$_2$O$_3$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 $^\circ$C) undoped Ga$_2$O$_3$ buffer is grown followed by transition layers to a high-temperature (HT, 810 $^\circ$C) Si-doped Ga$_2$O$_3$ channel layers without growth interruption. The (010)… ▽ More We demonstrate a new substrate cleaning and buffer growth scheme in $β$-Ga$_2$O$_3$ epitaxial thin films using metalorganic vapor phase epitaxy (MOVPE). For the channel structure, a low-temperature (LT, 600 $^\circ$C) undoped Ga$_2$O$_3$ buffer is grown followed by transition layers to a high-temperature (HT, 810 $^\circ$C) Si-doped Ga$_2$O$_3$ channel layers without growth interruption. The (010) Ga$_2$O$_3$ Fe-doped substrate cleaning uses solvent cleaning followed by an additional HF (49% in water) treatment for 30 mins before the epilayer growth. This step is shown to compensate the parasitic Si channel at the epilayer-substrate interface that originates from the substrate polishing process or contamination from the ambient. SIMS analysis shows the Si peak atomic density at the substrate interface is several times lower than the Fe atomic density in the substrate - indicating full compensation. The elimination of the parasitic electron channel at the epi-substrate interface was also verified by electrical (capacitance-voltage profiling) measurements. In the LT-grown buffer layers, it is seen that the Fe forward decay tail from the substrate is very sharp with a decay rate of $\sim$ 9 nm$/$dec. These channels show record high electron mobility in the range of 196 - 85 cm$^2$/Vs in unintentionally doped and Si-doped films in the doping range of 2$\times$10$^{16}$ to 1$\times$10$^{20}$ cm$^{-3}$. Si delta-doped channels were also grown utilizing this substrate cleaning and the hybrid LT-buffers. Record high electron Hall mobility of 110 cm$^2$/Vs was measured for sheet charge density of 9.2$\times$10$^{12}$ cm$^{-2}$. This substrate cleaning combined with the LT-buffer scheme shows the potential of designing Si-doped $β$-Ga$_2$O$_3$ channels with exceptional transport properties for high performance gallium oxide-based electron devices. △ Less

Submitted 2 February, 2023; v1 submitted 5 December, 2022; originally announced December 2022.

Comments: 20 pages, 10 figures,

Decoherence, Entanglement Negativity and Circuit Complexity for Open Quantum System

Authors: Arpan Bhattacharyya, Tanvir Hanif, S. Shajidul Haque, Arpon Paul

Abstract: In this paper, we compare the saturation time scales for complexity, linear entropy and entanglement negativity for two open quantum systems. Our first model is a coupled harmonic oscillator, where we treat one of the oscillators as the bath. The second one is a type of Caldeira Leggett model, where we consider a one-dimensional free scalar field as the bath. Using these open quantum systems, we d… ▽ More In this paper, we compare the saturation time scales for complexity, linear entropy and entanglement negativity for two open quantum systems. Our first model is a coupled harmonic oscillator, where we treat one of the oscillators as the bath. The second one is a type of Caldeira Leggett model, where we consider a one-dimensional free scalar field as the bath. Using these open quantum systems, we discovered that both the complexity of purification and the complexity from operator state mapping is always saturated for a completely mixed state. More explicitly, the saturation time scale for both types of complexity is smaller than the saturation time scale for linear entropy. On top of this, we found that the saturation time scale for linear entropy and entanglement negativity is of the same order for the Caldeira Leggett model. △ Less

Submitted 17 October, 2022; originally announced October 2022.

Comments: 40 pages, 8 figures

Journal ref: Phys.Rev.D 107 (2023) 10

Ultra-Wide Bandgap Ga$_2$O$_3$-on-SiC MOSFETs

Authors: Yiwen Song, Arkka Bhattacharyya, Anwarul Karim, Daniel Shoemaker, Hsien-Lien Huang, Saurav Roy, Craig McGray, Jacob H. Leach, Jinwoo Hwang, Sriram Krishnamoorthy, Sukwon Choi

Abstract: Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O… ▽ More Ulta-wide bandgap semiconductors based on $β$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most critical challenge to the commercialization of Ga$_2$O$_3$ electronics is overheating, which impacts the device's performance and reliability. We fabricated a Ga$_2$O$_3$/4H-SiC composite wafer using a fusion-bonding method. A low temperature ($\le$ 600 $^{\circ}$C) epitaxy and device processing approach based on low-temperature (LT) metalorganic vapor phase epitaxy is developed to grow a Ga$_2$O$_3$ epitaxial channel layer on the composite wafer and subsequently fabricate into Ga$_2$O$_3$ power MOSFETs. This LT approach is essential to preserve the structural integrity of the composite wafer. These LT-grown epitaxial Ga$_2$O$_3$ MOSFETs deliver high thermal performance (56% reduction in channel temperature), high voltage blocking capabilities up to 2.45 kV, and power figures of merit of $\sim$ 300 MW/cm$^2$, which is a record high for any heterogeneously integrated Ga$_2$O$_3$ devices reported to date. This work is the first realization of multi-kilovolt homoepitaxial Ga$_2$O$_3$ power MOSFETs fabricated on a composite substrate with high heat transfer performance which delivers state-of-the-art power density values while running much cooler than those on native substrates. Thermal characterization and modeling results reveal that a Ga$_2$O$_3$/diamond composite wafer with a reduced Ga$_2$O$_3$ thickness ($\sim$ 1 $μ$m) and thinner bonding interlayer ($<$ 10 nm) can reduce the device thermal impedance to a level lower than today's GaN-on-SiC power switches. △ Less

Submitted 21 February, 2023; v1 submitted 13 October, 2022; originally announced October 2022.

Comments: 17 pages, 9 figures

Multigap Superconductivity in the Filled-Skutterudite Compound LaRu$_4$As$_{12}$ probed by muon spin rotation

Authors: A. Bhattacharyya, D. T. Adroja, M. M. Koza, S. Tsutsui, T. Cichorek, A. D. Hillier

Abstract: Muon spin rotation ($μ$SR) and inelastic X-ray scattering (IXS) were used to investigate the superconducting properties of the filled-skutterudite compound LaRu$_{4}$As$_{12}$. A two-gap isotropic ($s+s$)-wave model can explain the temperature dependence of the superfluid density. Zero field $μ$SR measurements confirm that the time-reversal symmetry does not break upon entering the superconducting… ▽ More Muon spin rotation ($μ$SR) and inelastic X-ray scattering (IXS) were used to investigate the superconducting properties of the filled-skutterudite compound LaRu$_{4}$As$_{12}$. A two-gap isotropic ($s+s$)-wave model can explain the temperature dependence of the superfluid density. Zero field $μ$SR measurements confirm that the time-reversal symmetry does not break upon entering the superconducting state. The measurements of lattice dynamics at 2, 20 and 300 K revealed temperature dependencies of the phonon modes that do not follow strictly a hardening of phonon frequencies upon cooling as expected within the quasi-harmonic picture. The 20~K data rather mark a turning point for the majority of the phonon frequencies. Indeed a hardening is observed approaching 20~K from above, while for a few branches a weak softening is visible upon further cooling to 2~K. The observed dispersion relations of phonon modes throughout the Brillouin zone matches with the DFT prediction quite closely. Our results point out that cubic LaRu$_{4}$As$_{12}$ is a good reference material for studying multiband superconductivity, including those with lower crystallographic symmetries such as iron arsenide-based superconductors. △ Less

Submitted 23 September, 2022; originally announced September 2022.

Comments: 8 pages, 8 figures,

Bootstrapping the Kronig-Penney Model

Authors: Matthew J. Blacker, Arpan Bhattacharyya, Aritra Banerjee

Abstract: Recently, bootstrap methods from conformal field theory have been adapted for studying the energy spectrum of various quantum mechanical systems. In this paper, we consider the application of these methods in obtaining the spectrum from the Schrödinger equation with periodic potentials, paying particular attention to the Kronig-Penney model of a particle in a one-dimensional lattice. With an appro… ▽ More Recently, bootstrap methods from conformal field theory have been adapted for studying the energy spectrum of various quantum mechanical systems. In this paper, we consider the application of these methods in obtaining the spectrum from the Schrödinger equation with periodic potentials, paying particular attention to the Kronig-Penney model of a particle in a one-dimensional lattice. With an appropriate choice of operator basis involving position and momenta, we find that the bootstrap approach efficiently computes the band gaps of the energy spectrum but has trouble effectively constraining the minimum energy. We show how applying more complex constraints involving higher powers of momenta can potentially remedy such a problem. We also propose an approach for analytically constructing the dispersion relation associated with the Bloch momentum of the system. △ Less

Submitted 29 November, 2022; v1 submitted 20 September, 2022; originally announced September 2022.

Comments: 21 pages, 5 figures, typos corrected, version to appear in Physical Review D

Journal ref: Phys.Rev.D 106 (2022) 11, 116008

Disorder driven cluster glass state in a geometrically frustrated hexagonal perovskite

Authors: Shruti Chakravarty, Øystein Slagtern Fjellvåg, Arpan Bhattacharyya, Lukas Keller, Sunil Nair

Abstract: We report the observation of cluster glass-like properties in a double perovskite ruthenate Ba$_2$CoRuO$_6$ through structural (neutron and synchrotron X-ray diffraction), magnetic and transport measurements. The system exhibits classic glassy characteristics like a frequency dependence in ac Susceptibility, aging and memory effects along with persistance of short-range correlations upto room temp… ▽ More We report the observation of cluster glass-like properties in a double perovskite ruthenate Ba$_2$CoRuO$_6$ through structural (neutron and synchrotron X-ray diffraction), magnetic and transport measurements. The system exhibits classic glassy characteristics like a frequency dependence in ac Susceptibility, aging and memory effects along with persistance of short-range correlations upto room temperature. The significant ($\sim30\%$) anti-site disorder on the dimer sites, coupled with the inherent geometrical frustration, allows a variety of exchange (both antiferro- and ferromagnetic) interactions to be distributed randomly across the lattice. On cooling, locally dominant interactions cause spins to nucleate and form local, short-range ordered clusters which grow in size until a global freezing occurs at about $T_f \sim 43K$. △ Less

Submitted 11 April, 2023; v1 submitted 13 September, 2022; originally announced September 2022.

Quantum critical spin-liquid-like behavior in S = 1/2 quasikagome lattice CeRh1-xPdxSn investigated using muon spin relaxation and neutron scattering

Authors: Rajesh Tripathi, D. T. Adroja, C. Ritter, Shivani Sharma, Chongli Yang, A. D. Hillier, M. M. Koza, F. Demmel, A. Sundaresan, S. Langridge, Wataru Higemoto, Takashi U. Ito, A. M. Strydom, G. B. G. Stenning, A. Bhattacharyya, David Keen, H. C. Walker, R. S. Perry, Francis Pratt, Qimiao Si, T. Takabatake

Abstract: We present the results of muon spin relaxation ($μ$SR) and neutron scattering on the Ce-based quasikagome lattice CeRh$_{1-x}$Pd$_{x}$Sn ($x=0.1$ to 0.75). Our ZF-$μ$SR results reveal the absence of static long-range magnetic order down to 0.05~K in $x = 0.1$ single crystals. The weak temperature-dependent plateaus of the dynamic spin fluctuations below 0.2~K in ZF-$μ$SR together with its longitud… ▽ More We present the results of muon spin relaxation ($μ$SR) and neutron scattering on the Ce-based quasikagome lattice CeRh$_{1-x}$Pd$_{x}$Sn ($x=0.1$ to 0.75). Our ZF-$μ$SR results reveal the absence of static long-range magnetic order down to 0.05~K in $x = 0.1$ single crystals. The weak temperature-dependent plateaus of the dynamic spin fluctuations below 0.2~K in ZF-$μ$SR together with its longitudinal-field (LF) dependence between 0 and 3~kG indicate the presence of dynamic spin fluctuations persisting even at $T$ = 0.05~K without static magnetic order. On the other hand, $C_{\text{4f}}$/$T$ increases as --log $T$ on cooling below 0.9~K, passes through a broad maximum at 0.13~K and slightly decreases on further cooling. The ac-susceptibility also exhibits a frequency independent broad peak at 0.16~K, which is prominent with an applied field $H$ along $c$-direction. We, therefore, argue that such a behavior for $x=0.1$ (namely, a plateau in spin relaxation rate ($λ$) below 0.2~K and a linear $T$ dependence in $C_{\text{4f}}$ below 0.13~K) can be attributed to a metallic spin-liquid (SL) ground state near the quantum critical point in the frustrated Kondo lattice. The LF-$μ$SR study suggests that the out of kagome plane spin fluctuations are responsible for the SL behavior. Low energy inelastic neutron scattering (INS) of $x$ = 0.1 reveals gapless magnetic excitations, which are also supported by the behavior of $C_{\text{4f}}$ proportional to $T^{1.1}$ down to 0.06~K. △ Less

Submitted 5 August, 2022; originally announced August 2022.

Comments: 19 pages and 9 figures

Journal ref: Physical Review B 106, 064436 (2022)

Low Resistance Ohmic Contact On Epitaxial MOVPE-grown $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ Films

Authors: Fikadu Alema, Carl Peterson, Arkka Bhattacharyya, Saurav Roy, Sriram Krishnamoorthy, Andrei Osinsky

Abstract: We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and t… ▽ More We report on the realization of record low resistance Ohmic contacts to MOVPE-grown heavily Si-doped $β$-Ga$_2$O$_3$ and $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ epitaxial films. Transfer length measurement (TLM) patterns were fabricated on the heavily Si-doped homoepitaxial $β$-Ga$_2$O$_3$ films with electron concentration (n) ranging from 1.77 to 3.23e20 cm^-3. Record low specific contact resistance and total contact resistance (Rc) of 1.62e-7 Ohm.cm^2 and 0.023 Ohm.mm were realized for $β$-Ga$_2$O$_3$: Si films with n > 3e20 cm^-3. TLM structures were also fabricated on heavily Si doped coherently strained $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$ (x=12%, 17% and 22%) films. The film with 12% Al composition (n=1.23e20 cm^-3) showed \r{ho}c of 5.85e-6 Ohm.cm^2, but it increased to 2.19e-4 Ohm.cm^2 for a layer with a 22% Al composition. Annealing the samples post metal deposition has generally led to a decrease in contact resistance, but for high Al content $β$-(Al$_x$Ga$_1-x$)$_2$ O$_3$, the contact resistance did not change significantly after the annealing process. The low contact resistance values measured in this work are very promising for the fabrication of high frequency power devices. △ Less

Submitted 3 August, 2022; originally announced August 2022.

High-Mobility Tri-Gate $β$-Ga$_2$O$_3$ MESFETs with a Power Figure of Merit over 0.9 GW/cm$^2$

Authors: Arkka Bhattacharyya, Saurav Roy, Praneeth Ranga, Carl Peterson, Sriram Krishnamoorthy

Abstract: In this letter, fin-shape tri-gate $β$-Ga$_{2}$O$_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm$^{2}$ - a record high for any $β$-Ga$_{2}$O$_{3}$ transistor to date. A low-temperature undoped buffer-channel stack design is developed which demonstrates record high Hall and drift electron mobilities in doped $β$-Ga$_{2}$O$_{3}$ channels allowing for low ON res… ▽ More In this letter, fin-shape tri-gate $β$-Ga$_{2}$O$_{3}$ lateral MESFETs are demonstrated with a high power figure of merit of 0.95 GW/cm$^{2}$ - a record high for any $β$-Ga$_{2}$O$_{3}$ transistor to date. A low-temperature undoped buffer-channel stack design is developed which demonstrates record high Hall and drift electron mobilities in doped $β$-Ga$_{2}$O$_{3}$ channels allowing for low ON resistances R$_{ON}$ in $β$-Ga$_{2}$O$_{3}$ MESFETs. Fin-widths (W$_{fin}$) were 1.2-1.5 $μ$m and there were 25 fins (N$_{fin}$) per device with a trench depth of $\sim$1$μ$m. A $β$-Ga$_2$O$_3$ MESFET with a source-drain length of 6.4 $μ$m exhibits a high ON current (187 mA/mm), low R$_{ON}$ (20.5 $Ω$.mm) and a high average breakdown field (4.2 MV/cm). All devices show very low reverse leakage until catastrophic breakdown for breakdown voltages scaled from 1.1kV to $\sim$3kV. This work demonstrates the potential of channel engineering in improving $β$-Ga$_{2}$O$_{3}$ device performance toward lower conduction losses for low-to-medium voltage applications. △ Less

Submitted 31 July, 2022; v1 submitted 24 June, 2022; originally announced June 2022.

Comments: 4 pages, 5 pages

Nodeless time-reversal symmetry breaking in the centrosymmetric superconductor Sc$_5$Co$_4$Si$_{10}$ probed by muon-spin spectroscopy

Authors: A. Bhattacharyya, M. R. Lees, K. Panda, P. P. Ferreira, T. T. Dorini, Emilie Gaudry, L. T. F. Eleno, V. K. Anand, J. Sannigrahi, P. K. Biswas, R. Tripathi, D. T. Adroja

Abstract: We investigate the superconducting properties of Sc$_{5}$Co$_{4}$Si$_{10}$ using low-temperature resistivity, magnetization, heat capacity, and muon-spin rotation and relaxation ($μ$SR) measurements. We find that Sc$_{5}$Co$_{4}$Si$_{10}$ {exhibits type-II} superconductivity with a superconducting transition temperature $T_\mathrm{C}= 3.5 (1)$\,K. The temperature dependence of the superfluid densi… ▽ More We investigate the superconducting properties of Sc$_{5}$Co$_{4}$Si$_{10}$ using low-temperature resistivity, magnetization, heat capacity, and muon-spin rotation and relaxation ($μ$SR) measurements. We find that Sc$_{5}$Co$_{4}$Si$_{10}$ {exhibits type-II} superconductivity with a superconducting transition temperature $T_\mathrm{C}= 3.5 (1)$\,K. The temperature dependence of the superfluid density obtained from transverse-field $μ$SR spectra is best modeled using an isotropic Bardeen-Cooper-Schrieffer type $s$-wave gap symmetry with $2Δ/k_\mathrm{B}T_\mathrm{C} = 2.84(2)$. However, the zero-field muon-spin relaxation asymmetry reveals the appearance of a spontaneous magnetic field below $T_\mathrm{C}$, indicating that time-reversal symmetry (TRS) is broken in the superconducting state. Although this behavior is commonly associated with non-unitary or mixed singlet-triplet pairing, our group-theoretical analysis of the Ginzburg-Landau free energy alongside density functional theory calculations indicates that unconventional mechanisms are pretty unlikely. Therefore, we have hypothesized that TRS breaking may occur via a conventional electron-phonon process. △ Less

Submitted 19 May, 2022; originally announced May 2022.

Comments: 9 pages, 6 figures

Superconductivity in the layered cage compound Ba3Rh4Ge16

Authors: Yi Zhao, Jun Deng, A. Bhattacharyya, D. T. Adroja, P. K. Biswas, Lingling Gao, Weizheng Cao, Changhua Li, Cuiying Pei, Tianping Ying, Hideo Hosono, Yanpeng Qi

Abstract: We report the synthesis and superconducting properties of a layered cage compound Ba3Rh4Ge16. Similar to Ba3Ir4Ge16, the compound is composed of 2D networks of cage units, formed by noncubic Rh-Ge building blocks, in marked contrast to the reported rattling compounds. The electrical resistivity, magnetization, specific heat capacity, and muSR measurements unveiled moderately coupled s-wave superco… ▽ More We report the synthesis and superconducting properties of a layered cage compound Ba3Rh4Ge16. Similar to Ba3Ir4Ge16, the compound is composed of 2D networks of cage units, formed by noncubic Rh-Ge building blocks, in marked contrast to the reported rattling compounds. The electrical resistivity, magnetization, specific heat capacity, and muSR measurements unveiled moderately coupled s-wave superconductivity with a critical temperature Tc = 7.0 K, the upper critical field ~ 2.5 T, the electron-phonon coupling strength ~ 0.80, and the Ginzburg-Landau parameter ~ 7.89. The mass reduction by the substitution of Ir by Rh is believed to be responsible for the enhancement of Tc and coupling between the cage and guest atoms. Our results highlight the importance of the atomic weight of the framework in cage compounds in controlling the electron-phonon coupling strength and Tc. △ Less

Submitted 1 December, 2021; originally announced December 2021.

Comments: 8 pages, 7 figures,1 table

Journal ref: Chin. Phys. Lett. 38 127402(2021)

$μ$SR study of unconventional pairing symmetry in the quasi-1D Na$_2$Cr$_3$As$_3$ superconductor

Authors: A Bhattacharyya, D T Adroja, Y Feng, Debarchan Das, P K Biswas, Tanmoy Das, J. Zhao

Abstract: We report the finding of a novel pairing state in a newly discovered superconductor Na$_2$Cr$_3$As$_3$. This material has a noncentrosymmetric quasi-one-dimensional crystal structure and is superconducting at $T_{\mathrm{C}}\sim$ 8.0 K. We find that the magnetic penetration depth data suggests the presence of a nodal line $p_z$-wave pairing state with zero magnetic moment using transverse-field mu… ▽ More We report the finding of a novel pairing state in a newly discovered superconductor Na$_2$Cr$_3$As$_3$. This material has a noncentrosymmetric quasi-one-dimensional crystal structure and is superconducting at $T_{\mathrm{C}}\sim$ 8.0 K. We find that the magnetic penetration depth data suggests the presence of a nodal line $p_z$-wave pairing state with zero magnetic moment using transverse-field muon-spin rotation (TF-$μ$SR) measurements. The nodal gap observed in Na$_2$Cr$_3$As$_3$ compound is consistent with that observed in isostructural (K,Cs)$_2$Cr$_3$As$_3$ compounds using TF-$μ$SR measurements. The observed pairing state is consistent with a three-band model spin-fluctuation calculation, which reveals the $S_z=0$ spin-triplet pairing state with the $\sin k_z$ pairing symmetry. The long-sought search for chiral superconductivity with topological applications could be aided by such a novel triplet $S_z=0$ $p$-wave pairing state. △ Less

Submitted 9 November, 2021; originally announced November 2021.

Comments: 9 pages, 3 figures

A crossover from Kondo semiconductor to metallic antiferromagnet with $5d$-electron doping in CeFe$_2$Al$_{10}$

Authors: Rajesh Tripathi, D. T. Adroja, M. R. Lees, A. Sundaresa, S. Langridge, A. Bhattacharyya, V. K. Anand, D. Khalyavin, J. Sannigrahi, G. Cibin, A. D. Hillier, R. I. Smith, H. C. Walker, Y. Muro, T. Takabatake

Abstract: We report a systematic study of the $5d$-electron-doped system Ce(Fe$_{1-x}$Ir$_x$)$_2$Al$_{10}$ ($0 \leq x \leq 0.15$). With increasing $x$, the orthorhombic $b$~axis decreases slightly while accompanying changes in $a$ and $c$ leave the unit cell volume almost unchanged. Inelastic neutron scattering, along with thermal and transport measurements, reveal that for the Kondo semiconductor CeFe$_2$A… ▽ More We report a systematic study of the $5d$-electron-doped system Ce(Fe$_{1-x}$Ir$_x$)$_2$Al$_{10}$ ($0 \leq x \leq 0.15$). With increasing $x$, the orthorhombic $b$~axis decreases slightly while accompanying changes in $a$ and $c$ leave the unit cell volume almost unchanged. Inelastic neutron scattering, along with thermal and transport measurements, reveal that for the Kondo semiconductor CeFe$_2$Al$_{10}$, the low-temperature energy gap which is proposed to be a consequence of strong $c \mhyphen f$ hybridization, is suppressed by a small amount of Ir substitution for Fe, and that the system adopts a metallic ground state with an increase in the density of states at the Fermi level. The charge or transport gap collapses (at $x=$~0.04) faster than the spin gap with Ir substitution. Magnetic susceptibility, heat capacity, and muon spin relaxation measurements demonstrate that the system undergoes long-range antiferromagnetic order below a Néel temperature, $T_{\mathrm{N}}$, of 3.1(2)~K for $x = 0.15$. The ordered moment is estimated to be smaller than 0.07(1)~$μ_\mathrm{B}$/Ce although the trivalent state of Ce is confirmed by Ce L$_3$-edge x-ray absorption near edge spectroscopy. It is suggested that the $c \mhyphen f$ hybridization gap, which plays an important role in the unusually high ordering temperatures observed in Ce$T_2$Al$_{10}$ ($T$ = Ru and Os), may not be necessary for the onset of magnetic order with a low $T_{\mathrm{N}}$ seen here in Ce(Fe$_{1-x}$Ir$_x$)$_2$Al$_{10}$. △ Less

Submitted 4 June, 2021; originally announced June 2021.

Comments: 12 pages, 11 figures

High Permittivity Dielectric Field-Plated Vertical (001) $β$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$

Authors: Saurav Roy, Arkka Bhattacharyya, Praneeth Ranga, Heather Splawn, Jacob Leach, Sriram Krishnamoorthy

Abstract: This paper presents vertical (001) oriented $β$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $μm$ was used to enable a punch-through (PT) field profile and very low differential specific on-resistance (R$_{on-sp}$) of 0.32 m$Ω$-cm$^{2}$. The extreme permittivity field plate oxide facilitated the later… ▽ More This paper presents vertical (001) oriented $β$-Ga$_2$O$_3$ field plated (FP) Schottky barrier diode (SBD) with a novel extreme permittivity dielectric field oxide. A thin drift layer of 1.7 $μm$ was used to enable a punch-through (PT) field profile and very low differential specific on-resistance (R$_{on-sp}$) of 0.32 m$Ω$-cm$^{2}$. The extreme permittivity field plate oxide facilitated the lateral spread of the electric field profile beyond the field plate edge and enabled a breakdown voltage ($V_{br}$) of 687 V. The edge termination efficiency increases from 13.5 $\%$ for non-field plated structure to 63 $\%$ for high permittivity field plate structure. The surface breakdown electric field was extracted to be 5.45 MV/cm at the center of the anode region using TCAD simulations. The high permittivity field plated SBD demonstrated a record high Baliga figure of merit (BFOM) of 1.47 GW/cm$^{2}$ showing the potential of Ga$_2$O$_3$ power devices for multi-kilovolt class applications. △ Less

Submitted 5 May, 2021; originally announced May 2021.

Dynamic Spin Fluctuations in the Frustrated Spin Chain Compound Li$_3$Cu$_2$SbO$_6$

Authors: A. Bhattacharyya, T. K. Bhowmik, D. T. Adroja, B. Rahaman, S. Kar, S. Das, T. Saha-Dasgupta, P. K. Biswas, T. P. Sinha, R. A. Ewings, D. D. Khalyavin, A. M. Strydom

Abstract: We report the signatures of dynamic spin fluctuations in the layered honeycomb Li$_3$Cu$_2$SbO$_6$ compound, with a 3$d$ S = 1/2 $d^9$ Cu$^{2+}$ configuration, through muon spin rotation and relaxation ($μ$SR) and neutron scattering studies. Our zero-field (ZF) and longitudinal-field (LF)-$μ$SR results demonstrate the slowing down of the Cu$^{2+}$ spin fluctuations below 4.0 K. The saturation of t… ▽ More We report the signatures of dynamic spin fluctuations in the layered honeycomb Li$_3$Cu$_2$SbO$_6$ compound, with a 3$d$ S = 1/2 $d^9$ Cu$^{2+}$ configuration, through muon spin rotation and relaxation ($μ$SR) and neutron scattering studies. Our zero-field (ZF) and longitudinal-field (LF)-$μ$SR results demonstrate the slowing down of the Cu$^{2+}$ spin fluctuations below 4.0 K. The saturation of the ZF relaxation rate at low temperature, together with its weak dependence on the longitudinal field between 0 and 3.2 kG, indicates the presence of dynamic spin fluctuations persisting even at 80 mK without static order. Neutron scattering study reveals the gaped magnetic excitations with three modes at 7.7, 13.5 and 33 meV. Our DFT calculations reveal that the next nearest neighbors (NNN) AFM exchange ($J_{AFM}$ = 31 meV) is stronger than the NN FM exchange ($J_{FM}$ = -21 meV) indicating the importance of the orbital degrees of freedom. Our results suggest that the physics of Li$_3$Cu$_2$SbO$_6$ can be explained by an alternating AFM chain rather than the honeycomb lattice. △ Less

Submitted 22 April, 2021; originally announced April 2021.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 103, 174423 (2021)

Electron-phonon superconductivity in C-doped topological nodal-line semimetal Zr$_5$Pt$_3$: A muon spin rotation and relaxation ($μ$SR) study

Authors: A Bhattacharyya, P P Ferreira, K Panda, F B Santos, D T Adroja, K Yokoyama, T T Dorini, L T F Eleno, A J S Machado

Abstract: In the present work we demonstrate that C-doped Zr$_{5}$Pt$_{3}$ is an electron-phonon superconductor (with critical temperature T$_\mathrm{C}$ = 3.7\,K) with a nonsymmorphic topological Dirac nodal-line semimetal state, which we report here for the first time. The superconducting properties of Zr$_{5}$Pt$_{3}$C$_{0.5}$ have been investigated by means of magnetization and muon spin rotation and re… ▽ More In the present work we demonstrate that C-doped Zr$_{5}$Pt$_{3}$ is an electron-phonon superconductor (with critical temperature T$_\mathrm{C}$ = 3.7\,K) with a nonsymmorphic topological Dirac nodal-line semimetal state, which we report here for the first time. The superconducting properties of Zr$_{5}$Pt$_{3}$C$_{0.5}$ have been investigated by means of magnetization and muon spin rotation and relaxation ($μ$SR) measurements. We find that at low temperatures the depolarization rate is almost constant and can be well described by a single-band $s-$wave model with a superconducting gap of $2Δ(0)/k_\mathrm{B}T_\mathrm{C}$ = 3.84, close to the value of BCS theory. From transverse field $μ$SR analysis we estimate the London penetration depth $λ_{L}$ = 469 nm, superconducting carrier density $n_{s}$ = 2$\times$10$^{26}$ $m^{-3}$, and effective mass m$^{*}$ = 1.584 $m_{e}$. Zero field $μ$SR confirms the absence of any spontaneous magnetic moment in the superconducting ground state. To gain additional insights into the electronic ground state of C-doped Zr$_5$Pt$_3$, we have also performed first-principles calculations within the framework of density functional theory (DFT). The observed homogenous electronic character of the Fermi surface as well as the mutual decrease of $T_\mathrm{C}$ and density of states at the Fermi level are consistent with the experimental findings. However, the band structure reveals the presence of robust, gapless fourfold-degenarate nodal lines protected by $6_{3}$ screw rotations and glide mirror planes. Therefore, Zr$_5$Pt$_3$ represents a novel, unprecedented condensed matter system to investigate the intricate interplay between superconductivity and topology. △ Less

Submitted 21 April, 2021; originally announced April 2021.

Comments: 9 pages, 5 figures

In-situ dielectric Al2O3/\b{eta}-Ga2O3 Interfaces Grown Using Metal-organic Chemical Vapor Deposition

Authors: Saurav Roy, Adrian E. Chmielewski, Arkka Bhattacharyya, Praneeth Ranga, Rujun Sun, Michael A. Scarpulla, Nasim Alem, Sriram Krishnamoorthy

Abstract: High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al$_2$O$_3$ is performed in the same reactor as Ga$_2$O$_3$ using trimethylaluminum a… ▽ More High-quality dielectric-semiconductor interfaces are critical for reliable high-performance transistors. We report the in-situ metalorganic chemical vapor deposition (MOCVD) of Al$_2$O$_3$ on $β$-Ga$_2$O$_3$ as a potentially better alternative to the most commonly used atomic layer deposition (ALD). The growth of Al$_2$O$_3$ is performed in the same reactor as Ga$_2$O$_3$ using trimethylaluminum and O$_2$ as precursors without breaking the vacuum at a growth temperature of 600 $^0$C. The fast and slow near interface traps at the Al$_2$O$_3$/ $β$-Ga$_2$O$_3$ interface are identified and quantified using stressed capacitance-voltage (CV) measurements on metal oxide semiconductor capacitor (MOSCAP) structures. The density of shallow and deep level initially filled traps (D$_{it}$) are measured using ultra-violet (UV) assisted CV technique. The average D$_{it}$ for the MOSCAP is determined to be 7.8 $\times$ 10$^{11}$ cm$^{-2}$eV$^{-1}$. The conduction band offset of the Al$_2$O$_3$/ Ga$_2$O$_3$ interface is also determined from CV measurements and found out to be 1.7 eV which is in close agreement with the existing literature reports of ALD Al$_2$O$_3$/ Ga$_2$O$_3$ interface. The current-voltage characteristics are also analyzed and the average breakdown field is extracted to be approximately 5.8 MV/cm. This in-situ Al$_2$O$_3$ dielectric on $β$-Ga$_2$O$_3$ with improved dielectric properties can enable Ga$_2$O$_3$-based high performance devices. △ Less

Submitted 28 March, 2021; originally announced March 2021.

N-type doping of LPCVD-grown \b{eta}-Ga2O3 thin films using solid-source germanium

Authors: Praneeth Ranga, Arkka Bhattacharyya, Luisa Whittaker-Brooks, Michael A. Scarpulla, Sriram Krishnamoorthy

Abstract: We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical vapor deposition (LPCVD) reactor with either an oxygen or gallium delivery tube. Films were grown on 6 degree offcut sapphire and (010) \b{eta}-Ga2O3 substrates with growth rates between 0.5 - 22 μm/hr. By controlling th… ▽ More We report on the growth and characterization of Ge-doped \b{eta}-Ga2O3 thin films using a solid germanium source. \b{eta}-Ga2O3 thin films were grown using a low-pressure chemical vapor deposition (LPCVD) reactor with either an oxygen or gallium delivery tube. Films were grown on 6 degree offcut sapphire and (010) \b{eta}-Ga2O3 substrates with growth rates between 0.5 - 22 μm/hr. By controlling the germanium vapor pressure, a wide range of Hall carrier concentrations between 10^17 - 10^19 cm-3 were achieved. Low-temperature Hall data revealed a difference in donor incorporation depending on the reactor configuration. At low growth rates, germanium occupied a single donor energy level between 8 - 10 meV. At higher growth rates, germanium doping predominantly results in a deeper donor energy level at 85 meV. This work shows the effect of reactor design and growth regime on the kinetics of impurity incorporation. Studying donor incorporation in \b{eta}-Ga2O3 is important for the design of high-power electronic devices. △ Less

Submitted 8 March, 2021; originally announced March 2021.

Comments: 16 pages,4 figures

Journal ref: Journal of Vacuum Science & Technology A 39, 030404 (2021)

Probing the superconducting gap structure in the noncentrosymmetric topological superconductor ZrRuAs

Authors: Debarchan Das, D. T. Adroja, M. R. Lees, R. W. Taylor, Z. S. Bishnoi, V. K. Anand, A. Bhattacharyya, Z. Guguchia, C. Baines, H. Luetkens, G. B. G. Stenning, Lei Duan, Xiancheng Wang, Changqing Jin

Abstract: The superconducting gap structure of a topological crystalline insulator (TCI) candidate ZrRuAs ($T^{\rm on}_{\rm c}$ = 7.9(1) K) with a noncentrosymmetric crystal structure has been investigated using muon spin rotation/relaxation ($μ$SR) measurements in transverse-field (TF) and zero-field (ZF) geometries. We also present the results of magnetization, electrical resistivity and heat capacity mea… ▽ More The superconducting gap structure of a topological crystalline insulator (TCI) candidate ZrRuAs ($T^{\rm on}_{\rm c}$ = 7.9(1) K) with a noncentrosymmetric crystal structure has been investigated using muon spin rotation/relaxation ($μ$SR) measurements in transverse-field (TF) and zero-field (ZF) geometries. We also present the results of magnetization, electrical resistivity and heat capacity measurements on ZrRuAs, which reveal bulk superconductivity below 7.9~K. The temperature dependence of the effective penetration depth obtained from the analysis of the TF-$μ$SR spectra below $T_{\rm c}$ is well described by an isotropic $s$-wave gap model as also inferred from an analysis of the heat capacity in the superconducting state. ZF $μ$SR data do not show any significant change in the muon spin relaxation rate above and below the superconducting transition temperature indicating that time-reversal symmetry is preserved in the superconducting state of this material. △ Less

Submitted 22 April, 2021; v1 submitted 20 January, 2021; originally announced January 2021.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. B 103, 144516 (2021)

Defect states and their electric field-enhanced electron thermal emission in heavily Zr-doped beta-Ga2O3 crystals

Authors: Rujun Sun, Yu Kee Ooi, Arkka Bhattacharyya, Muad Saleh, Sriram Krishnamoorthy, Kelvin G. Lynn, Michael A. Scarpulla

Abstract: Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-Ga2O3 crystals. In UID crystals with an electron concentration of 10^17 cm-3, we observe levels at 0.18 eV and 0.46 eV in addition to the previously re… ▽ More Performing deep level transient spectroscopy (DLTS) on Schottky diodes, we investigated defect levels below the conduction band minima (Ec) in Czochralski (CZ) grown unintentionally-doped (UID) and vertical gradient freeze (VGF)-grown Zr-doped beta-Ga2O3 crystals. In UID crystals with an electron concentration of 10^17 cm-3, we observe levels at 0.18 eV and 0.46 eV in addition to the previously reported 0.86 (E2) and 1.03 eV (E3) levels. For 10^18 cm-3 Zr-doped Ga2O3, signatures at 0.30 eV (E15) and 0.71 eV (E16) are present. For the highest Zr doping of 5*10^18 cm-3, we observe only one signature at 0.59 eV. Electric field-enhanced emission rates are demonstrated via increasing the reverse bias during measurement. The 0.86 eV signature in the UID sample displays phonon-assisted tunneling enhanced thermal emission and is consistent with the widely reported E2 (FeGa) defect. The 0.71 eV (E16) signature in the lower-Zr-doped crystal also exhibits phonon-assisted tunneling emission enhancement. Taking into account that the high doping in the Zr-doped diodes also increases the electric field, we propose that the 0.59 eV signature in the highest Zr-doped sample likely corresponds to the 0.71 eV signature in lower-doped samples. Our analysis highlights the importance of testing for and reporting on field-enhanced emission especially the electric field present during DLTS and other characterization experiments on beta-Ga2O3 along with the standard emission energy, cross-section, and lambda-corrected trap density. This is important because of the intended use of beta-Ga2O3 in high-field devices and the many orders of magnitude of possible doping. △ Less

Submitted 6 November, 2020; originally announced November 2020.

Comments: 18 pages, 3 figures

Antiferromagnetic correlations in strongly valence fluctuating CeIrSn

Authors: Y. Shimura, A. Wörl, M. Sundermann, S. Tsuda, D. T. Adroja, A. Bhattacharyya, A. M. Strydom, A. D. Hillier, F. Pratt, A. Gloskovskii, A. Severing, T. Onimaru, P. Gegenwart, T. Takabatake

Abstract: CeIrSn with a quasikagome Ce lattice in the hexagonal basal plane is a strongly valence fluctuating compound, as we confirm by hard x-ray photoelectron spectroscopy and inelastic neutron scattering, with a high Kondo temperature of $T_{\mathrm{K}}\sim 480$\,K. We report a negative in-plane thermal expansion $α/T$ below 2\,K, which passes through a broad minimum near 0.75\,K. Volume and $a$-axis ma… ▽ More CeIrSn with a quasikagome Ce lattice in the hexagonal basal plane is a strongly valence fluctuating compound, as we confirm by hard x-ray photoelectron spectroscopy and inelastic neutron scattering, with a high Kondo temperature of $T_{\mathrm{K}}\sim 480$\,K. We report a negative in-plane thermal expansion $α/T$ below 2\,K, which passes through a broad minimum near 0.75\,K. Volume and $a$-axis magnetostriction for $B \parallel a$ are markedly negative at low fields and change sign before a sharp metamagnetic anomaly at 6\,T. These behaviors are unexpected for Ce-based intermediate valence systems, which should feature positive expansivity. Rather they point towards antiferromagnetic correlations at very low temperatures. This is supported by muon spin relaxation measurements down to 0.1\,K, which provide microscopic evidence for a broad distribution of internal magnetic fields. Comparison with isostructural CeRhSn suggests that these antiferromagnetic correlations emerging at $T\ll T_{\mathrm{K}}$ result from geometrical frustration. △ Less

Submitted 30 April, 2021; v1 submitted 7 October, 2020; originally announced October 2020.

Comments: to be published in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 126, 217202 (2021)

Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence

Authors: Rujun Sun, Yu Kee Ooi, Praneeth Ranga, Arkka Bhattacharyya, Sriram Krishnamoorthy, Michael A. Scarpulla

Abstract: In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor phase epitaxy (MOVPE) induced by annealing at different temperatures under O2 ambient. Annealing at successively higher temperatures decreases the overall PL yield and UV intensity at nearly the same rates, indicating t… ▽ More In this work, we use photoluminescence spectroscopy (PL) to monitor changes in the UV, UV', blue, and green emission bands from n-type (010) Ga2O3 films grown by metalorganic vapor phase epitaxy (MOVPE) induced by annealing at different temperatures under O2 ambient. Annealing at successively higher temperatures decreases the overall PL yield and UV intensity at nearly the same rates, indicating the increase in formation of at least one non-radiative defect type. Simultaneously, the PL yield ratios of blue/UV and green/UV increase, suggesting that defects associated with these emissions increase in concentration with O2 annealing. Utilizing the different absorption coefficients of 240 and 266 nm polarization-dependent excitation, we find an overall activation energy for the generation of non-radiative defects of 0.69 eV in the bulk but 1.55 eV near the surface. We also deduce activation energies for the green emission-related defects of 0.60 eV near the surface and 0.89-0.92 eV through the films, whereas the blue-related defects have activation energy in the range 0.43-0.62 eV for all depths. Lastly, we observe hillock surface morphologies and Cr diffusion from the substrate into the film for temperatures above 1050 oC. These observations are consistent with the formation and diffusion of VGa and its complexes as a dominant process during O2 annealing, but further work will be necessary to determine which defects and complexes provide radiative and non-radiative recombination channels and the detailed kinetic processes occurring at surfaces and in bulk amongst defect populations. △ Less

Submitted 30 September, 2020; originally announced September 2020.

Comments: 14 pages, 3 figures

Structural Phase Dependent Giant Interfacial Spin Transparency in W/CoFeB Thin Film Heterostructure

Authors: Surya Narayan Panda, Sudip Majumder, Arpan Bhattacharyya, Soma Dutta, Samiran Choudhury, Anjan Barman

Abstract: Pure spin current has transfigured the energy-efficient spintronic devices and it has the salient characteristic of transport of the spin angular momentum. Spin pumping is a potent method to generate pure spin current and for its increased efficiency high effective spin-mixing conductance (Geff) and interfacial spin transparency (T) are essential. Here, a giant T is reported in Sub/W(t)/Co20Fe60B2… ▽ More Pure spin current has transfigured the energy-efficient spintronic devices and it has the salient characteristic of transport of the spin angular momentum. Spin pumping is a potent method to generate pure spin current and for its increased efficiency high effective spin-mixing conductance (Geff) and interfacial spin transparency (T) are essential. Here, a giant T is reported in Sub/W(t)/Co20Fe60B20(d)/SiO2(2 nm) heterostructures in β-tungsten (β-W) phase by employing all-optical time-resolved magneto-optical Kerr effect technique. From the variation of Gilbert damping with W and CoFeB thicknesses, the spin diffusion length of W and spin-mixing conductances are extracted. Subsequently, T is derived as 0.81 \pm 0.03 for the β-W/CoFeB interface. A sharp variation of Geff and T with W thickness is observed in consonance with the thickness-dependent structural phase transition and resistivity of W. The spin memory loss and two-magnon scattering effects are found to have negligible contributions to damping modulation as opposed to spin pumping effect which is reconfirmed from the invariance of damping with Cu spacer layer thickness inserted between W and CoFeB. The observation of giant interfacial spin transparency and its strong dependence on crystal structures of W will be important for pure spin current based spin-orbitronic devices. △ Less

Submitted 29 September, 2020; originally announced September 2020.

Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 Heterostructure Channels

Authors: Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski, Saurav Roy, Rujun Sun, Michael A. Scarpulla, Nasim Alem, Sriram Krishnamoorthy

Abstract: We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet cha… ▽ More We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown \b{eta}-(AlxGa1-x)2O3/\b{eta}-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped \b{eta}-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 kΩ/Square is measured at room temperature, which includes contribution from a parallel channel in \b{eta}-(AlxGa1-x)2O3. △ Less

Submitted 30 November, 2020; v1 submitted 23 September, 2020; originally announced September 2020.

Comments: 22 pages, 4 figures

Journal ref: Appl. Phys. Express 14 025501 (2021)

Delta-doped \b{eta}-Ga2O3 Films With Low FWHM Charge Profile Grown By Metalorganic Vapor-Phase Epitaxy

Authors: Praneeth Ranga, Arkka Bhattacharyya, Adrian Chmielewski, Saurav Roy, Nasim Alem, Sriram Krishnamoorthy

Abstract: We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show that surface segregation is the chief cause of large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in… ▽ More We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show that surface segregation is the chief cause of large FWHM in MOVPE-grown films. The surface segregation coefficient (R) is observed to reduce with reduction in the growth temperature. Films grown at 600 °C show an electron concentration of 9.7 x 1012 cm-2 and a FWHM of 3.2 nm. High resolution scanning/transmission electron microscopy of the epitaxial film did not reveal any significant observable degradation in crystal quality of the delta sheet and surrounding regions. Hall measurements of delta-doped film on Fe-doped substrate showed a sheet charge density of 6.1 x 1012 cm-2 and carrier mobility of 83 cm2/V. s. Realization of sharp delta doping profiles in MOVPE-grown \b{eta}-Ga2O3 is promising for high performance device applications. △ Less

Submitted 29 August, 2020; originally announced August 2020.

Comments: 10 pages, 5 figures

Low Temperature Homoepitaxy Of (010) $β$-Ga$_2$O$_3$ By Metalorganic Vapor Phase Epitaxy : Expanding The Growth Window

Authors: Arkka Bhattacharyya, Praneeth Ranga, Saurav Roy, Jonathan Ogle, Luisa Whittaker-Brooks, Sriram Krishnamoorthy

Abstract: In this work, we report on the growth of high-mobility $β$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature $β$-Ga$_2$O$_3$ thin films grown at 600$^{\circ}$C on Fe-doped (010) bulk substrates exhibits remarkable crystalline quality which is evident from the measured room tem… ▽ More In this work, we report on the growth of high-mobility $β$-Ga$_2$O$_3$ homoepitaxial thin films grown at a temperature much lower than the conventional growth temperature window for metalorganic vapor phase epitaxy. Low-temperature $β$-Ga$_2$O$_3$ thin films grown at 600$^{\circ}$C on Fe-doped (010) bulk substrates exhibits remarkable crystalline quality which is evident from the measured room temperature Hall mobility of 186 cm$^2$/Vs for the unintentionally doped films. N-type doping is achieved by using Si as a dopant and controllable doping in the range of 2$\times$10$^{16}$ - 2$\times$10$^{19}$ cm$^{-3}$ is studied. Si incorporation and activation is studied by comparing silicon concentration from secondary ion mass spectroscopy (SIMS) and electron concentration from temperature-dependent Hall measurements. The films exhibit high purity (low C and H concentrations) with a very low concentration of compensating acceptors (2$\times$10$^{15}$ cm$^{-3}$) even at this growth temperature. Additionally, abrupt doping profile with forward decay of $\sim$ 5nm/dec (10 times improvement compared to what is observed for thin films grown at 810$^{\circ}$C) is demonstrated by growing at a lower temperature. △ Less

Submitted 1 August, 2020; originally announced August 2020.

Comments: 5 pages, 6 figures

Multigap superconductivity in the new BiCh$_{2}$-based layered superconductor La$_\mathrm{0.7}$Ce$_\mathrm{0.3}$OBiSSe

Authors: A. Bhattacharyya, D. T. Adroja, R. Sogabe, Y. Goto, Y. Mizuguchi, A. D. Hillier

Abstract: The layered bismuth oxy-sulfide materials, which are structurally related to the Fe-pnictides/chalcogenides and cuprates superconductors, have brought substantial attention for understanding the physics of reduced dimensional superconductors. We have examined the pairing symmetry of recently discovered BiCh$_2$-based superconductor, La$_\mathrm{1-x}$Ce$_\mathrm{x}$OBiSSe with $x$ = 0.3, through tr… ▽ More The layered bismuth oxy-sulfide materials, which are structurally related to the Fe-pnictides/chalcogenides and cuprates superconductors, have brought substantial attention for understanding the physics of reduced dimensional superconductors. We have examined the pairing symmetry of recently discovered BiCh$_2$-based superconductor, La$_\mathrm{1-x}$Ce$_\mathrm{x}$OBiSSe with $x$ = 0.3, through transverse field (TF) muon spin rotation measurement, in addition we present the results of magnetization, resistivity and zero field (ZF) muon spin relaxation measurements. Bulk superconductivity has been observed below 2.7 K for $x$ = 0.3, verified by resistivity and magnetization data. The temperature dependence of the magnetic penetration depth has been determined from TF-$μ$SR data can be described by an isotropic two-gap $s+s$ wave model compared to a single gap $s$- or anisotropic $s$-wave models, the resemblance with Fe-pnictides/chalcogenides and MgB$_2$. Furthermore, from the TF-$μ$SR data, we have determined the London's penetration depth $λ_\mathrm{L}(0)$ = 452(3) nm, superconducting carrier's density $n_\mathrm{s}$ = 2.18(1) $\times$10$^{26}$ carriers/m$^{3}$ and effective mass enhancement $m^{*}$ = 1.66(1) $m_\mathrm{e}$, respectively. No signature of spontaneous internal field is found down to 100 mK in ZF-$μ$SR measurement suggest that time-reversal symmetry is preserved in this system. △ Less

Submitted 7 July, 2020; originally announced July 2020.

Comments: 5 pages, 3 figures

Topological Phase Transitions Induced by Varying Topology and Boundaries in the Toric Code

Authors: Amit Jamadagni, Arpan Bhattacharyya

Abstract: One of the important characteristics of topological phases of matter is the topology of the underlying manifold on which they are defined. In this paper, we present the sensitivity of such phases of matter to the underlying topology, by studying the phase transitions induced due to the change in the boundary conditions. We claim that these phase transitions are accompanied by broken symmetries in… ▽ More One of the important characteristics of topological phases of matter is the topology of the underlying manifold on which they are defined. In this paper, we present the sensitivity of such phases of matter to the underlying topology, by studying the phase transitions induced due to the change in the boundary conditions. We claim that these phase transitions are accompanied by broken symmetries in the excitation space and to gain further insight we analyze various signatures like the ground state degeneracy, topological entanglement entropy while introducing the open-loop operator whose expectation value effectively captures the phase transition. Further, we extend the analysis to an open quantum setup by defining effective collapse operators, the dynamics of which cool the system to different topologically ordered steady states. We show that the phase transition between such steady states is effectively captured by the expectation value of the open-loop operator. △ Less

Submitted 22 January, 2021; v1 submitted 7 April, 2020; originally announced April 2020.

Comments: 16 pages, 23 figures

Journal ref: New J. Phys. 23 (2021) 103001

Quantum Fluctuations in the Non-Fermi Liquid System CeCo$_{2}$Ga$_{8}$ Investigated Using $μ$SR

Authors: A. Bhattacharyya, D. T. Adroja, J. S. Lord, L. Wang, Y. Shi, K. Panda, H. Luo, A. M. Strydom

Abstract: Reduced dimensionality offers a crucial information in deciding the type of the quantum ground state in heavy fermion materials. Here we have examined stoichiometric CeCo$_{2}$Ga$_{8}$ compound, which crystallizes in a quasi-one-dimensional crystal structure with Ga-Ce-Co chains along the $c$-axis. The low-temperature behavior of magnetic susceptibility ($χ\sim-\ln T$), heat capacity (… ▽ More Reduced dimensionality offers a crucial information in deciding the type of the quantum ground state in heavy fermion materials. Here we have examined stoichiometric CeCo$_{2}$Ga$_{8}$ compound, which crystallizes in a quasi-one-dimensional crystal structure with Ga-Ce-Co chains along the $c$-axis. The low-temperature behavior of magnetic susceptibility ($χ\sim-\ln T$), heat capacity ($C_p/T\sim-\ln T$), and resistivity ($ρ\sim T^{n}$) firmly confirm the non-Fermi liquid ground state of CeCo$_{2}$Ga$_{8}$. We studied the low-energy spin dynamics of CeCo$_{2}$Ga$_{8}$ compound utilizing zero field (ZF-) and longitudinal field (LF-) muon spin relaxation ($μ$SR) measurements. ZF-$μ$SR measurement reveals the absence of long-range magnetic ordering down to 70 mK, and interestingly below 1 K, the electronic relaxation rate sharply rises, intimating the appearance of low energy quantum spin fluctuations in CeCo$_{2}$Ga$_{8}$. △ Less

Submitted 20 March, 2020; originally announced March 2020.

Comments: 6 pages, 2 figures

Journal ref: Phys. Rev. B 101, 214437 (2020)

Degenerate doping in \b{eta}-Ga2O3 Single Crystals through Hf-doping

Authors: Muad Saleh, Joel B. Varley, Jani Jesenovec, Arkka Bhattacharyya, Sriram Krishnamoorthy, Santosh Swain, Kelvin Lynn

Abstract: N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta}-Ga2O3 single crystals using UV-Vis-NIR absorption and Hall Effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the m… ▽ More N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta}-Ga2O3 single crystals using UV-Vis-NIR absorption and Hall Effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze (VGF) and Czochralski method in mixed Ar+O2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve degenerate doping in \b{eta}-Ga2O3 with a measured electron concentration 2 x 10^19 cm^-3 , mobility 80-65 cm^2 /Vs, and resistivity down to 5 mOhm-cm in our samples. The concentration of Hf was measured to be 1.3 x 10^19 atoms/cm^3 using glow discharge mass spectroscopy (GDMS) on doped samples, confirming Hf to be the cause of n-type conductivity (electron concentration ~2 x 10^19 cm-3). △ Less

Submitted 30 January, 2020; originally announced January 2020.

Schottky Barrier Height Engineering In $β$-Ga$_2$O$_3$ Using SiO$_2$ Interlayer Dielectric

Authors: Arkka Bhattacharyya, Praneeth Ranga, Muad Saleh, Saurav Roy, Michael A. Scarpulla, Kelvin G. Lynn, Sriram Krishnamoorthy

Abstract: This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS)… ▽ More This paper reports on the modulation of Schottky barrier heights (SBH) on three different orientations of $β$-Ga$_2$O$_3$ by insertion of an ultra-thin SiO$_2$ dielectric interlayer at the metal-semiconductor junction, which can potentially lower the Fermi-level pinning (FLP) effect due to metal-induced gap states (MIGS). Pt and Ni metal-semiconductor (MS) and metal-interlayer-semiconductor (MIS) Schottky barrier diodes were fabricated on bulk n-type doped $β$-Ga$_2$O$_3$ single crystal substrates along the (010), (-201) and (100) orientations and were characterized by room temperature current-voltage (I-V) and capacitance-voltage (C-V) measurements. Pt MIS diodes exhibited 0.53 eV and 0.37 eV increment in SBH along the (010) and (-201) orientations respectively as compared to their respective MS counterparts. The highest SBH of 1.81 eV was achieved on the (010)-oriented MIS SBD using Pt metal. The MIS SBDs on (100)-oriented substrates exhibited a dramatic increment ($>$1.5$\times$) in SBH as well as reduction in reverse leakage current. The use of thin dielectric interlayers can be an efficient experimental method to modulate SBH of metal/Ga$_2$O$_3$ junctions. △ Less

Submitted 20 January, 2020; originally announced January 2020.

Comments: 8 pages, 10 figures, 2 tables

Memory of rheological stress in polymers using Fractional Calculus

Authors: Archishna Bhattacharyya, Pratyusha Nandi, Somasri Hazra, Tapati Dutta

Abstract: The rheological properties of viscoelastic materials like polymer melts are greatly affected by factors like salinity, temperature, concentration and pH of the solution. In this study, the memory of the stress affected by each of these factors is shown to be trapped in the order of the fractional derivative of the dynamical equation describing stress and strain in the material. To demonstrate this… ▽ More The rheological properties of viscoelastic materials like polymer melts are greatly affected by factors like salinity, temperature, concentration and pH of the solution. In this study, the memory of the stress affected by each of these factors is shown to be trapped in the order of the fractional derivative of the dynamical equation describing stress and strain in the material. To demonstrate this, the rheological properties of the polymer melt hydrolyzed polyacrylamide HPAM have been modeled using a two element Maxwell model. The model has successfully reproduce existing experimental data on elastic modulus and complex viscosity for these stress factors, besides predicting the development of creep compliance with shear rate. The work also establishes that it is possible to tailor a particular rheological property by suitably tuning a pair of properties, complementary conjugates, that offset each others effects on the rheology. The study shows that HPAM has at least two pairs of complementary conjugates in temperature and pH, and concentration and pH. Further it is shown that the variation of viscosity with shear rate shows a power law behavior for almost all variations in stress parameters. Our modelling using fractional calculus establishes that the fractional order derivative q which is recognized as a memory index to emergent phenomena, shows an inverse relationship with respect to the power law exponent a, the higher the memory index q, the smaller is the power-law exponent a. △ Less

Submitted 18 January, 2020; originally announced January 2020.

Comments: 47 pages, 11 figures

Pairing symmetry of an intermediate valence superconductor CeIr3 investigated using muSR measurements

Authors: D. T. Adroja, A. Bhattacharyya, Y. J. Sato, M. R. Lees, P. K. Biswas, K. Panda, Gavin B. G. Stenning, A. D. Hillier, D. Aoki

Abstract: We have investigated the bulk and microscopic properties of the rhombohedral intermediate valence superconductor CeIr$_3$ by employing magnetization, heat capacity, and muon spin rotation and relaxation ($μ$SR) measurements. The magnetic susceptibility indicates bulk superconductivity below $T_\mathrm{C} = 3.1$~K. Heat capacity data also reveal a bulk superconducting transition at… ▽ More We have investigated the bulk and microscopic properties of the rhombohedral intermediate valence superconductor CeIr$_3$ by employing magnetization, heat capacity, and muon spin rotation and relaxation ($μ$SR) measurements. The magnetic susceptibility indicates bulk superconductivity below $T_\mathrm{C} = 3.1$~K. Heat capacity data also reveal a bulk superconducting transition at $T_\mathrm{C} = 3.1$~K with a second weak anomaly near 1.6~K. At $T_{\mathrm{C}}$, the jump in heat capacity $ΔC$/$γT_{\mathrm{C}} \sim 1.39(1)$, is slightly less than the BCS weak coupling limit of 1.43. Transverse-field $μ$SR measurements suggest a fully gapped, isotropic, $s$-wave superconductivity with 2$Δ(0)/k_{\mathrm{B}}T_{\mathrm{C}} = 3.76(3)$, very close to 3.56, the BCS gap value for weak-coupling superconductors. From the temperature variation of magnetic penetration depth, we have also determined the London penetration depth $λ_{\mathrm{L}}(0) = 435(2)$~nm, the carriers' effective mass enhancement $m^{*} = 1.69(1)m_{\mathrm{e}}$ and the superconducting carrier density $n_{\mathrm{s}} = 2.5(1)\times 10^{26}$ carriers m$^{-3}$. The fact that LaIr$_3$, with no $4f$-electrons, and CeIr$_3$ with $4f^{n}$ electrons where $n \le 1$-electron (Ce ion in a valence fluctuating state), both exhibit the same $s$-wave gap symmetry indicates that the physics of these two compounds is governed by the Ir-$d$ band near the Fermi-level, which is in agreement with previous band structure calculations. △ Less

Submitted 9 January, 2020; originally announced January 2020.

Comments: 8 pages 4 figures

Journal ref: Phys. Rev. B 103, 104514 (2021)

Evidence of nodal superconductivity in LaFeSiH

Authors: A. Bhattacharyya, P. Rodière, J. -B. Vaney, P. K. Biswas, A. D. Hillier, A. Bosin, F. Bernardini, S. Tencé, D. T. Adroja, A. Cano

Abstract: Unconventional superconductivity has recently been discovered in the first iron-based superconducting silicide LaFeSiH. By using the complementary techniques of muon spin rotation, tunneling diode oscillator and density functional theory, we investigate the magnetic penetration depth and thereby the superconducting gap of this novel high-temperature superconductor. We find that the magnetic penetr… ▽ More Unconventional superconductivity has recently been discovered in the first iron-based superconducting silicide LaFeSiH. By using the complementary techniques of muon spin rotation, tunneling diode oscillator and density functional theory, we investigate the magnetic penetration depth and thereby the superconducting gap of this novel high-temperature superconductor. We find that the magnetic penetration depth displays a sub-$T^2$ behavior in the low-temperature regime below $T_c/3$, which evidences a nodal structure of the gap (or a gap with very deep minima). Even if the topology of the computed Fermi surface is compatible with the $s_\pm$-wave case with accidental nodes, its nesting and orbital-content features may eventually result in a $d$-wave state, more unusual for high-temperature superconductors of this class. △ Less

Submitted 15 April, 2020; v1 submitted 29 October, 2019; originally announced October 2019.

Comments: 6 pages, 2 tables, 3 figures; v2: improved discussion and organization, 4 figs, 1 table

Journal ref: Phys. Rev. B 101, 224502 (2020)

Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy

Authors: Praneeth Ranga, Arkka Bhattacharyya, Ashwin Rishinaramangalam, Yu Kee Ooi, Michael A. Scarpulla, Daniel Feezell, Sriram Krishnamoorthy

Abstract: We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. Electron sheet charge density in the range of 2.9e12 cm-2 to 8e12 cm-2 with a half width at half maximum ranging from 6.2 nm to 3.5 nm is meas… ▽ More We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion mass spectroscopy. Electron sheet charge density in the range of 2.9e12 cm-2 to 8e12 cm-2 with a half width at half maximum ranging from 6.2 nm to 3.5 nm is measured. We also demonstrate a high density (6.4e12 cm-2) degenerate two-dimensional electron gas using a delta-doped \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure.The total charge could also include a contribution from a parallel channel in the \b{eta}-(Al0.26Ga0.74)2O3 alloy barrier. △ Less

Submitted 1 March, 2020; v1 submitted 28 October, 2019; originally announced October 2019.

Two-band superconductivity with unconventional pairing symmetry in HfV$_2$Ga$_4$

Authors: A. Bhattacharyya, P. P. Ferreira, F. B. Santos, D. T. Adroja, J. S. Lord, L. E. Correa, A. J. S. Machado, A. L. R. Manesco, L T. F. Eleno

Abstract: In this letter, we have examined the superconducting ground state of the HfV$_2$Ga$_4$ compound using resistivity, magnetization, zero-field (ZF) and transverse-field (TF) muon-spin relaxation and rotation ($μ$SR) measurements. Resistivity and magnetization unveil the onset of bulk superconductivity with $T_{\bf c}\sim$ 3.9~K, while TF-$μ$SR measurements show that the temperature dependence of the… ▽ More In this letter, we have examined the superconducting ground state of the HfV$_2$Ga$_4$ compound using resistivity, magnetization, zero-field (ZF) and transverse-field (TF) muon-spin relaxation and rotation ($μ$SR) measurements. Resistivity and magnetization unveil the onset of bulk superconductivity with $T_{\bf c}\sim$ 3.9~K, while TF-$μ$SR measurements show that the temperature dependence of the superfluid density is well described by a nodal two-gap $s$+$d$-wave order parameter model. In addition, ZF muon relaxation rate increases with decreasing temperature below 4.6 K, indicating the presence of weak spin fluctuations. These observations suggest an unconventional multiband nature of the superconductivity possibly arising from the distinct $d$-bands of V and Hf ions with spin fluctuations playing an important role. To better understand these findings, we carry out first-principles electronic-structure calculations, further highlighting that the Fermi surface consists of multiple disconnected sheets with very different orbital weights and spin-orbit coupling, bridging the way for a nodal multiband superconductivity scenario. In this vein, therefore, HfV$_2$Ga$_4$-family stands out as an open avenue to novel unexplored unconventional superconducting compounds, such as ScV$_2$Ga$_4$ and ZrV$_2$Ga$_4$, and other many rare earths based materials. △ Less

Submitted 24 September, 2019; originally announced September 2019.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. Research 2, 022001 (2020)

MOVPE-grown Si-doped \b{eta}-(Al0.26Ga0.74)2O3 thin films and heterostructures

Authors: Praneeth Ranga, Ashwin Rishinaramangalam, Joel Varley, Arkka Bhattacharyya, Daniel Feezell, Sriram Krishnamoorthy

Abstract: We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room temperature hall measurements showed a high carrier concentration of 6x101… ▽ More We report on n-type degenerate doping in MOVPE grown \b{eta}-(Al0.26Ga0.74)2O3 epitaxial thin films and modulation doping in \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure. Alloy composition is confirmed using HRXRD measurements. Carrier concentration in the thin films is proportional to the silane molar flow. Room temperature hall measurements showed a high carrier concentration of 6x1018-7.3x1019 cm-3 with a corresponding electron mobility of 53-27 cm2/V.s in uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 layers. Modulation doping is used to realize a total electron sheet charge of 2.3x1012 cm-2 in a \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructure using a uniformly-doped \b{eta}-(Al0.26Ga0.74)2O3 barrier layer and a thin spacer layer. △ Less

Submitted 11 September, 2019; originally announced September 2019.

Journal ref: Appl. Phys. Express 12 111004 (2019)

Universal Local Operator Quenches and Entanglement Entropy

Authors: Arpan Bhattacharyya, Tadashi Takayanagi, Koji Umemoto

Abstract: We present a new class of local quenches described by mixed states, parameterized universally by two parameters. We compute the evolutions of entanglement entropy for both a holographic and Dirac fermion CFT in two dimensions. This turns out to be equivalent to calculations of two point functions on a torus. We find that in holographic CFTs, the results coincide with the known results of pure stat… ▽ More We present a new class of local quenches described by mixed states, parameterized universally by two parameters. We compute the evolutions of entanglement entropy for both a holographic and Dirac fermion CFT in two dimensions. This turns out to be equivalent to calculations of two point functions on a torus. We find that in holographic CFTs, the results coincide with the known results of pure state local operator quenches. On the other hand, we obtain new behaviors in the Dirac fermion CFT, which are missing in the pure state counterpart. By combining our results with the inequalities known for von-Neumann entropy, we obtain an upper bound of the pure state local operator quenches in the Dirac fermion CFT. We also explore predictions about the behaviors of entanglement entropy for more general mixed states. △ Less

Submitted 10 September, 2019; originally announced September 2019.

Comments: 30 pages, 5 figures

Report number: YITP-19-85, IPMU19-0123

Journal ref: JHEP 1911 (2019) 107