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Signature of point nodal superconductivity in the Dirac semimetal PdTe
Authors:
C. S. Yadav,
Sudeep Kumar Ghosh,
Pankaj Kumar,
A. Thamizhavel,
P. L. Paulose
Abstract:
Recent Angle-Resolved Photo-emission Spectroscopy (ARPES) experiments [Phys. Rev. Lett. 130, 046402 (2023)] on PdTe, a 3D-Dirac semimetal and a superconductor with the transition temperature Tc ~ 4.3 K, have revealed compelling evidence of the presence of bulk nodes in the superconducting order parameter. To investigate the validity of this proposition, here we present a detailed investigation of…
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Recent Angle-Resolved Photo-emission Spectroscopy (ARPES) experiments [Phys. Rev. Lett. 130, 046402 (2023)] on PdTe, a 3D-Dirac semimetal and a superconductor with the transition temperature Tc ~ 4.3 K, have revealed compelling evidence of the presence of bulk nodes in the superconducting order parameter. To investigate the validity of this proposition, here we present a detailed investigation of the magnetic field dependence of the specific heat of PdTe down to temperatures ~ 58 mK. We observed that the low temperature specific heat of PdTe with an externally applied magnetic field exhibits a power-law field dependence, a characteristic of unconventional superconductivity. Furthermore, the zero-field low-temperature electronic specific heat follows a cubic temperature dependence, which is a signature of the presence of bulk point nodes in PdTe. These intriguing observations suggest that PdTe is a rare and fascinating topological material that exhibits both Dirac semimetallic properties and superconductivity with point nodal gap symmetry.
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Submitted 31 July, 2024;
originally announced August 2024.
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Anomalous resistivity upturn in Co intercalated TaS$_2$
Authors:
Moumita Nandi,
Surajit Dutta,
A. Thamizhavel,
S. K. Dhar
Abstract:
Intercalation of magnetic atoms into the van der Waals gaps of layered transition metal dichalcogenides offers an excellent platform to produce exotic physical properties. Here, we report a detailed study of magnetic and electrical transport properties of Co$_{0.28}$TaS$_2$. The temperature dependent resistivity measurements display anomalous upturn below 11 K, which persists in presence of magnet…
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Intercalation of magnetic atoms into the van der Waals gaps of layered transition metal dichalcogenides offers an excellent platform to produce exotic physical properties. Here, we report a detailed study of magnetic and electrical transport properties of Co$_{0.28}$TaS$_2$. The temperature dependent resistivity measurements display anomalous upturn below 11 K, which persists in presence of magnetic field even up to 14 T. In the low temperature region, the resistivity upturn exhibits a unique $T^{1/2}$ scaling behavior, which remains unchanged when an external magnetic field is applied. The $T^{1/2}$ dependence of resistivity upturn is the hallmark of non-Fermi liquid state in orbital two-channel Kondo effect(2CK). This anomalous resistivity upturn in Co$_{0.28}$TaS$_2$ can be attributed to the orbital two-channel Kondo mechanism.
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Submitted 14 July, 2024;
originally announced July 2024.
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Probing the superconducting gap structure of ScRuSi via $μ$SR and first-principles calculations
Authors:
K. Panda,
A. Bhattacharyya,
P. N. Ferreira,
Rajib Mondal,
A. Thamizhavel,
D. T. Adroja,
C. Heil,
L. T. F. Eleno,
A. D. Hillier
Abstract:
In this study, we present a thorough investigation into the superconducting state of the ruthenium-based ternary equiatomic compound ScRuSi. Our analysis combines experimental techniques, including muon spin rotation/relaxation ($μ$SR) and low-temperature resistivity measurements, with theoretical insights derived from first-principles calculations. The low-temperature resistivity measurements rev…
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In this study, we present a thorough investigation into the superconducting state of the ruthenium-based ternary equiatomic compound ScRuSi. Our analysis combines experimental techniques, including muon spin rotation/relaxation ($μ$SR) and low-temperature resistivity measurements, with theoretical insights derived from first-principles calculations. The low-temperature resistivity measurements reveal a distinct superconducting phase transition in the orthorhombic structure of ScRuSi at a critical temperature ($T_\text{C}$) of $2.5$ K. Further, the TF-$μ$SR analysis yields a gap-to-critical-temperature ratio of $2Δ/k_\mathrm{B}T_\mathrm{C} = 2.71$, a value consistent with results obtained from previous heat capacity measurements. The temperature dependence of the superconducting normalized depolarization rate is fully described by the isotropic $s$-wave gap model. Additionally, zero-field $μ$SR measurements indicate that the relaxation rate remains nearly identical below and above $T_\text{C}$. This observation strongly suggests the preservation of time-reversal symmetry within the superconducting state. By employing the McMillan-Allen-Dynes equation, we calculate a $T_\text{C}$ of $2.11$ K from first-principles calculations within the density functional theory framework. This calculated value aligns closely with the experimentally determined critical temperature. The coupling between the low-frequency phonon modes and the transition metal d-orbital states play an important role in governing the superconducting pairing in ScRuSi. The combination of experimental and theoretical approaches provides a comprehensive microscopic understanding of the superconducting nature of ScRuSi, offering insights into its critical temperature, pairing symmetry, and the underlying electron-phonon coupling mechanism.
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Submitted 26 June, 2024;
originally announced June 2024.
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Pick-up and assembling of chemically sensitive van der Waals heterostructures using dry cryogenic exfoliation
Authors:
Vilas Patil,
Sanat Ghosh,
Amit Basu,
Kuldeep,
Achintya Dutta,
Khushabu Agrawal,
Neha Bhatia,
Amit Shah,
Digambar A. Jangade,
Ruta Kulkarni,
A. Thamizhavel,
Mandar M. Deshmukh
Abstract:
Assembling atomic layers of van der Waals materials (vdW) combines the physics of two materials, offering opportunities for novel functional devices. Realization of this has been possible because of advancements in nanofabrication processes which often involve chemical processing of the materials under study; this can be detrimental to device performance. To address this issue, we have developed a…
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Assembling atomic layers of van der Waals materials (vdW) combines the physics of two materials, offering opportunities for novel functional devices. Realization of this has been possible because of advancements in nanofabrication processes which often involve chemical processing of the materials under study; this can be detrimental to device performance. To address this issue, we have developed a modified micro-manipulator setup for cryogenic exfoliation, pick up, and transfer of vdW materials to assemble heterostructures. We use the glass transition of a polymer PDMS to cleave a flake into two, followed by its pick-up and drop to form pristine twisted junctions. To demonstrate the potential of the technique, we fabricated twisted heterostructure of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO), a van der Waals high-temperature cuprate superconductor. We also employed this method to re-exfoliate NbSe$_2$ and make twisted heterostructure. Transport measurements of the fabricated devices indicate the high quality of the artificial twisted interface. In addition, we extend this cryogenic exfoliation method for other vdW materials, offering an effective way of assembling heterostructures and twisted junctions with pristine interfaces.
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Submitted 30 May, 2024;
originally announced May 2024.
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Charge density wave without long-range structural modulation in canted antiferromagnetic kagome FeGe
Authors:
Chenfei Shi,
Hanbin Deng,
Surya Rohith Kotla,
Yi Liu,
Sitaram Ramakrishnan,
Claudio Eisele,
Harshit Agarwal,
Leila Noohinejad,
Ji-Yong Liu,
Tianyu Yang,
Guowei Liu,
Bishal Baran Maity,
Qi Wang,
Zhaodi Lin,
Baojuan Kang,
Wanting Yang,
Yongchang Li,
Zhihua Yang,
Yuke Li,
Yanpeng Qi,
Arumugam Thamizhavel,
Wei Ren,
Guang-Han Cao,
Jia-Xin Yin,
Sander van Smaalen
, et al. (2 additional authors not shown)
Abstract:
Strongly correlated electron systems with a kagome lattice can host abundant exotic quantum states such as superconductivity and spin/charge density waves (CDW) due to the complicated interactions between different degrees of freedoms in the framework of a unique two-dimensional geometrically frustrated lattice structure. Recently, successive orders of A-type antiferromagnetism (AFM),…
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Strongly correlated electron systems with a kagome lattice can host abundant exotic quantum states such as superconductivity and spin/charge density waves (CDW) due to the complicated interactions between different degrees of freedoms in the framework of a unique two-dimensional geometrically frustrated lattice structure. Recently, successive orders of A-type antiferromagnetism (AFM), $2\times2\times2$ CDW and canted double-cone AFM have been manifested upon cooling in magnetic kagome FeGe. However, the mechanism of the CDW order and its interaction with magnetism are presently enigmatic at best. Here we investigate the evolution of CDW order with temperature across the spin canting transition in FeGe by single-crystal x-ray diffraction. Refinements of its modulated structure are presented using the superspace approach. Interestingly, the superlattice reflections originating from CDW-induced long-range structural modulation become extremely weak after the system enters the canted AFM while a $2\times2$ CDW in the $ab$ plane persists as a long-range order demonstrated by strong electronic modulation in the d$I$/d$V$ map of scanning tunneling spectroscopy. We discovered a novel CDW order without long-range structural modulation in FeGe probably because of the competition between CDW and canted AFM in determining the underlying crystal structure. In addition, occupational modulations of Ge1 atoms located in the kagome plane and displacive modulations of all the atoms were extracted from the refinements, confirming the existence of Ge atom dimerization along the $c$ axis as the major distortion and indicating a dynamic transformation between different CDW domains.
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Submitted 1 April, 2024;
originally announced April 2024.
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Room temperature charge density wave in a tetragonal polymorph of Gd2Os3Si5 and study of its origin in the RE2T3X5 (RE = Rare earth, T = transition metal, X = Si, Ge) series
Authors:
Vikash Sharma,
Sitaram Ramakrishnan,
S. S. Jayakrishnan,
Surya Rohith Kotla,
Bishal Maiti,
Claudio Eisele,
Harshit Agarwal,
Leila Noohinejad,
M. Tolkiehn,
Dipanshu Bansal,
Sander van Smaalen,
Arumugam Thamizhavel
Abstract:
Charge density wave (CDW) systems are proposed to exhibit application potential for electronic and optoelectronic devices. Therefore, identifying new materials that exhibit a CDW state at room temperature is crucial for the development of CDW-based devices. Here, we present a non-layered tetragonal polymorph of Gd2Os3Si5, which exhibits a CDW state at room temperature. Gd2Os3Si5 crystallizes in th…
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Charge density wave (CDW) systems are proposed to exhibit application potential for electronic and optoelectronic devices. Therefore, identifying new materials that exhibit a CDW state at room temperature is crucial for the development of CDW-based devices. Here, we present a non-layered tetragonal polymorph of Gd2Os3Si5, which exhibits a CDW state at room temperature. Gd2Os3Si5 crystallizes in the U2Mn3Si5-type tetragonal crystal structure with the space group P4/mnc. Single-crystal x-ray diffraction (SXRD) analysis shows that Gd2Os3Si5 possesses an incommensurately modulated structure with modulation wave vector q = (0.53, 0, 0), while the modulation reduces the symmetry to orthorhombic Cccm(σ00)0s0. This differs in contrast to isostructural Sm2Ru3Ge5, where the modulated phase has been reported to possess the superspace symmetry Pm(α 0 γ)0. However, reinvestigation of Sm2Ru3Ge5 suggests that its modulated crystal structure can alternatively be described by Cccm(σ00)0s0, with modulations similar to Gd2Os3Si5. The magnetic susceptibility, \c{hi}(T), exhibits a maximum at low temperatures that indicates an antiferromagnetic transition at TN = 5.5 K. The \c{hi}(T) furthermore shows an anomaly at around 345 K, suggesting a CDW transition at TCDW = 345 K, that corroborates the result from high-temperature SXRD measurements. Interestingly, R2T3X5 compounds are known to crystallize either in the tetragonal Sc2Fe3Si5 type structure or in the orthorhombic U2Co3Si5 structure type. Not all of the compounds in the R2T3X5 series undergo CDW phase transitions. We find that R2T3X5 compounds will exhibit a CDW transition, if the condition : 0.526 < c/sqrt(ab) < 0.543 is satisfied. We suggest the wave vector-dependent electron-phonon coupling to be the dominant mechanism of CDW formation in the tetragonal polymorph of Gd2Os3Si5.
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Submitted 14 June, 2024; v1 submitted 13 March, 2024;
originally announced March 2024.
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Terahertz crystal electric field transitions in a Kondo-lattice antiferromagnet
Authors:
Payel Shee,
Chia-Jung Yang,
Shishir Kumar Pandey,
Ashis Kumar Nandy,
Ruta Kulkarni,
Arumugam Thamizhavel,
Manfred Fiebig,
Shovon Pal
Abstract:
Hybridization between the localized f-electrons and the delocalized conduction electrons together with the crystal electric field (CEF) play a determinant role in governing the many-body ground state of a correlated-electron system. Here, we investigate the low-energy CEF states in CeAg_2Ge_2, a prototype Kondo-lattice antiferromagnet where Kondo correlation is found to exist within the antiferrom…
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Hybridization between the localized f-electrons and the delocalized conduction electrons together with the crystal electric field (CEF) play a determinant role in governing the many-body ground state of a correlated-electron system. Here, we investigate the low-energy CEF states in CeAg_2Ge_2, a prototype Kondo-lattice antiferromagnet where Kondo correlation is found to exist within the antiferromagnetic phase. Using time-domain THz reflection spectroscopy, we show the first direct evidence of two low-energy CEF transitions at 0.6 THz (2.5 meV) and 2.1 THz (8.7 meV). The presence of low-frequency infrared-active phonon modes further manifests as a Fano-modified lineshape of the 2.1 THz CEF conductivity peak. The temporal spectral weights obtained directly from the THz time traces, in addition, corroborate the corresponding CEF temperature scales of the compound.
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Submitted 30 January, 2024;
originally announced January 2024.
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Evidence of electron correlation and unusual spectral evolution in an exotic superconductor, PdTe
Authors:
Ram Prakash Pandeya,
Arindam Pramanik,
Pramita Mishra,
Indranil Sarkar,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
We study the electronic structure of an exotic superconductor, PdTe employing depth-resolved high resolution photoemission spectroscopy and density functional theory. The valence band spectra exhibit large density of states at the Fermi level with flat intensity in a wide energy range indicating highly metallic ground state. The Pd 4d-Te 5p hybridization is found to be strong leading to a highly c…
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We study the electronic structure of an exotic superconductor, PdTe employing depth-resolved high resolution photoemission spectroscopy and density functional theory. The valence band spectra exhibit large density of states at the Fermi level with flat intensity in a wide energy range indicating highly metallic ground state. The Pd 4d-Te 5p hybridization is found to be strong leading to a highly covalent character of the itinerant states. Core level spectra exhibit several features including the signature of plasmon excitations. Although the radial extension of the 4d orbitals is larger than 3d ones, the Pd core level spectra exhibit distinct satellites indicating importance of electron correlation in the electronic structure which may be a reason for unconventional superconductivity observed in this system. The depth-resolved data reveal surface peaks at higher binding energies in both, Te and Pd core level spectra. Interestingly, core level shift in Te-case is significantly large compared to Pd although Te is relatively more electronegative. Detailed analysis rules out applicability of the charge transfer and/or band-narrowing models to capture this scenario. This unusual scenario is attributed to the reconstruction and/or vacancies at the surface. These results reveal the importance of electron correlation and surface topology for the physics of this material exhibiting Dirac fermions and complex superconductivity.
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Submitted 29 January, 2024;
originally announced January 2024.
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Evidence of electron correlation induced kink in Dirac bands in a non-symmorphic Kondo lattice system, CeAgSb2
Authors:
Sawani Datta,
Khadiza Ali,
Rahul Verma,
Bahadur Singh,
Saroj P. Dash,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
We study the behavior of Dirac fermions in the presence of electron correlation in a nonsymmorphic Kondo lattice system, CeAgSb2 employing high-resolution angle-resolved photoemission spectroscopy and first-principles calculations. Experiments reveal crossings of highly dispersive linear bands at the Brillouin zone boundary due to non-symmorphic symmetry. In addition, anisotropic Dirac cones are o…
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We study the behavior of Dirac fermions in the presence of electron correlation in a nonsymmorphic Kondo lattice system, CeAgSb2 employing high-resolution angle-resolved photoemission spectroscopy and first-principles calculations. Experiments reveal crossings of highly dispersive linear bands at the Brillouin zone boundary due to non-symmorphic symmetry. In addition, anisotropic Dirac cones are observed constituted by the squarenet Sb 5p states forming a diamond-shaped nodal line. The Dirac bands are linear in a wide energy range with a unusually high slope and exhibit distinct Dirac point in this highly spin-orbit coupled system. Interestingly, the linearity of the bands are preserved even after the hybridization of these states with the local Ce 4f states, which leads to a small reduction of slope via formation of a 'kink'. These results seed the emergence of an area of robust topological fermions even in presence of strong correlation.
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Submitted 9 November, 2023;
originally announced November 2023.
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Ultrafast Carrier Relaxation and Second Harmonic Generation in a Higher-Fold Weyl Fermionic System PtAl
Authors:
Vikas Saini,
Ajinkya Punjal,
Utkarsh Kumar Pandey,
Ruturaj Vikrant Puranik,
Vikash Sharma,
Vivek Dwij,
Kritika Vijay,
Ruta Kulkarni,
Soma Banik,
Aditya Dharmadhikari,
Bahadur Singh,
Shriganesh Prabhu,
A. Thamizhavel
Abstract:
In topological materials, shielding of bulk and surface states by crystalline symmetries has provided hitherto unknown access to electronic states in condensed matter physics. Interestingly, photo-excited carriers relax on an ultrafast timescale, demonstrating large transient mobility that could be harnessed for the development of ultrafast optoelectronic devices. In addition, these devices are mu…
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In topological materials, shielding of bulk and surface states by crystalline symmetries has provided hitherto unknown access to electronic states in condensed matter physics. Interestingly, photo-excited carriers relax on an ultrafast timescale, demonstrating large transient mobility that could be harnessed for the development of ultrafast optoelectronic devices. In addition, these devices are much more effective than topologically trivial systems because topological states are resilient to the corresponding symmetry-invariant perturbations. By using optical pump probe measurements, we systematically describe the relaxation dynamics of a topologically nontrivial chiral single crystal, PtAl. Based on the experimental data on transient reflectivity and electronic structures, it has been found that the carrier relaxation process involves both acoustic and optical phonons with oscillation frequencies of 0.06 and 2.94 THz, respectively, in picosecond time scale. PtAl with a space group of $P$$2_{1}$3 allows only one non-zero susceptibility element i.e. $d_{14}$, in second harmonic generation (SHG) with a large value of 468(1) pm/V, which is significantly higher than that observed in standard GaAs(111) and ZnTe(110) crystals. The intensity dependence of the SHG signal in PtAl reveals a non-perturbative origin. The present study on PtAl provides deeper insight into topological states which will be useful for ultrafast optoelectronic devices.
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Submitted 7 October, 2023;
originally announced October 2023.
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Non-centrosymmetric, transverse structural modulation in SrAl4, and elucidation of its origin in the BaAl4 family of compounds
Authors:
Sitaram Ramakrishnan,
Surya Rohith Kotla,
Hanqi Pi,
Bishal Baran Maity,
Jia Chen,
Jin-Ke Bao,
Zhaopeng Guo,
Masaki Kado,
Harshit Agarwal,
Claudio Eisele,
Minoru Nohara,
Leila Noohinejad,
Hongming Weng,
Srinivasan Ramakrishnan,
Arumugam Thamizhavel,
Sander van Smaalen
Abstract:
At ambient conditions SrAl4 adopts the BaAl4 structure type with space group I4/mmm. It undergoes a charge-density-wave (CDW) transition at TCDW = 243 K, followed by a structural transition at TS = 87 K. Temperature-dependent single-crystal X-ray diffraction (SXRD) leads to the observation of incommensurate superlattice reflections at q = σc* with σ= 0.1116 at 200 K. The CDW has orthorhombic symme…
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At ambient conditions SrAl4 adopts the BaAl4 structure type with space group I4/mmm. It undergoes a charge-density-wave (CDW) transition at TCDW = 243 K, followed by a structural transition at TS = 87 K. Temperature-dependent single-crystal X-ray diffraction (SXRD) leads to the observation of incommensurate superlattice reflections at q = σc* with σ= 0.1116 at 200 K. The CDW has orthorhombic symmetry with the acentric superspace group F222(00sigma)00s, where F222 is a subgroup of Fmmm as well as of I4/mmm. Atomic displacements mainly represent a transverse wave, with displacements that are 90 deg out of phase between the two diagonal directions of the I-centered unit cell, resulting in a helical wave. Small longitudinal displacements are provided by the second harmonic modulation. The orthorhombic phase realized in SrAl4 is similar to that found in EuAl4. Electronic structure calculations and phonon calculations by density functional theory (DFT) have failed to reveal the mechanism of CDW formation. However, DFT reveals that Al atoms dominate the density of states near the Fermi level, thus, corroborating the SXRD measurements. SrAl4 remains incommensurately modulated at the structural transition, where the symmetry lowers from orthorhombic to b-unique monoclinic. We have identified a simple criterion, that correlates the presence of a phase transition with the interatomic distances. Only those compounds XAl4-xGax(X = Ba, Eu, Sr, Ca; 0 < x <4) undergo phase transitions, for which the ratio c/a falls within the narrow range 2.51 < c/a < 2.54.
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Submitted 16 March, 2024; v1 submitted 16 September, 2023;
originally announced September 2023.
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Broken time-reversal symmetry in cubic skutterudite-like superconductor Y$_3$Ru$_4$Ge$_{13}$
Authors:
A. Kataria,
J. A. T. Verezhak,
O. Prakash,
R. K. Kushwaha,
A. Thamizhavel,
S. Ramakrishnan,
M. S. Scheurer,
A. D. Hillier,
R. P. Singh
Abstract:
The microscopic properties of superconducting cubic skutterudite-like material Y$_3$Ru$_4$Ge$_{13}$ are investigated using muon spin relaxation and rotation ($μ$SR) measurements. Zero-field $μ$SR measurements reveal the presence of a spontaneous internal field with a magnitude of $\approx$ 0.18~mT below the superconducting transition temperature, indicating broken time-reversal symmetry in the gro…
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The microscopic properties of superconducting cubic skutterudite-like material Y$_3$Ru$_4$Ge$_{13}$ are investigated using muon spin relaxation and rotation ($μ$SR) measurements. Zero-field $μ$SR measurements reveal the presence of a spontaneous internal field with a magnitude of $\approx$ 0.18~mT below the superconducting transition temperature, indicating broken time-reversal symmetry in the ground state. In line with previous experiments, transverse-field $μ$SR measurements are consistent with a fully developed superconductivity gap in Y$_3$Ru$_4$Ge$_{13}$. Our observations point towards the relevance of electronic correlations beyond electron-phonon coupling as origin and indicate that spin-orbit coupling is likely not the key driving force behind the spontaneous breaking of time-reversal symmetry in this system.
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Submitted 29 August, 2023;
originally announced August 2023.
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Annealing-induced long-range charge density wave order in magnetic kagome FeGe: fluctuations and disordered structure
Authors:
Chenfei Shi,
Yi Liu,
Bishal Baran Maity,
Qi Wang,
Surya Rohith Kotla,
Sitaram Ramakrishnan,
Claudio Eisele,
Harshit Agarwal,
Leila Noohinejad,
Qian Tao,
Baojuan Kang,
Zhefeng Lou,
Xiaohui Yang,
Yanpeng Qi,
Xiao Lin,
Zhu-An Xu,
A. Thamizhavel,
Guang-Han Cao,
Sander van Smaalen,
Shixun Cao,
Jin-Ke Bao
Abstract:
Charge density wave (CDW) in kagome materials with the geometric frustration is able to carry unconventional characteristics. Recently, a CDW has been observed below the antiferromagnetic order in kagome FeGe, in which magnetism and CDW are intertwined to form an emergent quantum ground state. However, the CDW is only short-ranged and the structural modulation originating from it has yet to be det…
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Charge density wave (CDW) in kagome materials with the geometric frustration is able to carry unconventional characteristics. Recently, a CDW has been observed below the antiferromagnetic order in kagome FeGe, in which magnetism and CDW are intertwined to form an emergent quantum ground state. However, the CDW is only short-ranged and the structural modulation originating from it has yet to be determined experimentally. Here we realize a long-range CDW order by post-annealing process, and resolve the structure model through single crystal x-ray diffraction. Occupational disorder of Ge resulting from short-range CDW correlations above $T_\mathrm{CDW}$ is identified from structure refinements. The partial dimerization of Ge along the $c$ axis is unveiled to be the dominant distortion for the CDW. Occupational disorder of Ge is also proved to exist in the CDW phase due to the random selection of partially dimerized Ge sites. Our work provides useful insights for understanding the unconventional nature of the CDW in FeGe.
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Submitted 23 July, 2024; v1 submitted 17 August, 2023;
originally announced August 2023.
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Inelastic neutron scattering investigation of the crystal field excitations of NdCo$_5$
Authors:
F. de Almeida Passos,
G. J. Nilsen,
C. E. Patrick,
M. D. Le,
G. Balakrishnan,
Santosh Kumar,
A. Thamizhavel,
D. R. Cornejo,
J. Larrea Jiménez
Abstract:
We present an inelastic neutron scattering study of the crystal electric field levels in the intermetallic ferrimagnets RECo$_{5}$ (RE = Nd and Y). In NdCo$_{5}$, measurements at $5~$K reveal two levels at approximately 28.9 and 52.9 meV. Crystal field calculations including the exchange field $B_{\textrm{exc}}$ from the Co sites account for both of these, as well as the spectrum at temperatures a…
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We present an inelastic neutron scattering study of the crystal electric field levels in the intermetallic ferrimagnets RECo$_{5}$ (RE = Nd and Y). In NdCo$_{5}$, measurements at $5~$K reveal two levels at approximately 28.9 and 52.9 meV. Crystal field calculations including the exchange field $B_{\textrm{exc}}$ from the Co sites account for both of these, as well as the spectrum at temperatures above the spin-reorientation transition at $\sim 280$~K. In particular, it is found that both a large hexagonal crystal field parameter $A_{6}^6\langle r^6 \rangle$ and $B_{\textrm{exc}}$ are required to reproduce the data, with the latter having a much larger value than that deduced from previous computational and experimental studies. Our study sheds light on the delicate interplay of terms in the rare-earth Hamiltonian of RECo$_5$ systems, and is therefore expected to stimulate further experimental and computational work on the broader family of rare-earth permanent magnets.
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Submitted 1 June, 2023;
originally announced June 2023.
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Enhancement of density of states and suppression of superconductivity in site-disordered topological metal LaPtSi
Authors:
Sitaram Ramakrishnan,
Tatsuya Yamakawa,
Ryohei Oishi,
Yasuyuki Shimura,
Takahiro Onimaru,
Arumugam Thamizhavel,
Srinivasan Ramakrishnan,
Minoru Nohara
Abstract:
Single crystals of non-centrosymmetric $s$-wave superconductor LaPt$_{0.88}$Si$_{1.12}$ have been grown by the Czochralski (Cz) technique, whose crystal structure is described by the space group $I4{_1}md$ at ambient conditions. The inter-site mixing between platinum and silicon is confirmed by both single-crystal x-ray diffraction (SXRD) and electron probe micro-analyzer (EPMA). The disordered ma…
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Single crystals of non-centrosymmetric $s$-wave superconductor LaPt$_{0.88}$Si$_{1.12}$ have been grown by the Czochralski (Cz) technique, whose crystal structure is described by the space group $I4{_1}md$ at ambient conditions. The inter-site mixing between platinum and silicon is confirmed by both single-crystal x-ray diffraction (SXRD) and electron probe micro-analyzer (EPMA). The disordered material exhibits a lower superconducting (SC) transition temperature $T_c$ at 2.02 K as opposed to the highest value of 3.9 K reported in polycrystalline LaPtSi without inter-site mixing. From specific heat, the Sommerfeld coefficient ($γ$) is estimated to be 7.85 mJ/mol K$^2$, which is much larger than the values reported for the samples exhibiting higher $T_c$. This is unprecedented as $T_c$ seems to decrease with increase in the electron density of states (DOS) at the Fermi energy and thus $γ$. The present work reports on the anomalous behaviour of SC and normal state properties of LaPt$_{x}$Si$_{2-x}$, presumably caused due to the existence of non-trivial topological bands.
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Submitted 22 May, 2023;
originally announced May 2023.
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A Trivial Geometrical Phase of an Electron Wavefunction in a Direct Band Gap Semiconductor CdGeAs$_{2}$
Authors:
Vikas Saini,
Souvik Sasmal,
Vikash Sharma,
Suman Nandi,
Gourav Dwari,
Bishal Maity,
Ruta Kulkarni,
Arumugam Thamizhavel
Abstract:
Chalcopyrite compounds are extensively explored for their exotic topological phases and associated phenomena in a variety of experiments. Here, we discuss the electrical transport properties of a direct energy gap semiconductor CdGeAs$_{2}$. The observed transverse magnetoresistance (MR) is found to be around 136% at a temperature of 1.8 K and a magnetic field of 14 T, following the semiclassical…
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Chalcopyrite compounds are extensively explored for their exotic topological phases and associated phenomena in a variety of experiments. Here, we discuss the electrical transport properties of a direct energy gap semiconductor CdGeAs$_{2}$. The observed transverse magnetoresistance (MR) is found to be around 136% at a temperature of 1.8 K and a magnetic field of 14 T, following the semiclassical exponent MR $\sim$ $B^{2.18}$. The MR analysis exhibits a violation of the Kohler rule, suggesting the involvement of multiple carriers in the system. Below 15 K, with decreasing magnetic field, the MR increases, leading to the well known quantum interference phenomenon weak localization (WL). The analysis of the magnetoconductivity data based on the Hikami-Larkin-Nagaoka (HLN) model unveils three dimensional nature of the WL and the weak spin-orbit coupling in CdGeAs$_{2}$. The phase coherence length follows the $L_φ$ $\sim$ $T^{-0.66}$ power law, which exhibits the 3D nature of the observed WL feature.
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Submitted 5 May, 2023;
originally announced May 2023.
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Realization of Z$_2$ Topological Metal in Single-Crystalline Nickel Deficient NiV$_2$Se$_4$
Authors:
Sitaram Ramakrishnan,
Shidaling Matteppanavar,
Andreas Schonleber,
Bikash Patra,
Birender Singh,
Arumugam Thamizhavel,
Bahadur Singh,
Srinivasan Ramakrishnan,
Sander van Smaalen
Abstract:
Temperature-dependent electronic and magnetic properties are reported for a Z2 topological metal single-crystalline nickel-deficient NiV$_2$Se$_4$. It is found to crystallize in the monoclinic Cr3S4 structure type with space group I2=m. From single-crystal x-ray diffraction, we find that there are vacancies on the Ni site, resulting in the composition Ni0:85V2Se4 in agreement with our electron-pro…
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Temperature-dependent electronic and magnetic properties are reported for a Z2 topological metal single-crystalline nickel-deficient NiV$_2$Se$_4$. It is found to crystallize in the monoclinic Cr3S4 structure type with space group I2=m. From single-crystal x-ray diffraction, we find that there are vacancies on the Ni site, resulting in the composition Ni0:85V2Se4 in agreement with our electron-probe microanalysis. The electrical resistivity shows metallic behavior with a broad anomaly around 150{200 K that is also observed in the heat capacity data. This anomaly indicates a change of state of the material below 150 K. We believe that this anomaly could be due to spin fluctuations or charge-density-wave (CDW) fluctuations, where the lack of long-range order is caused by vacancies at the Ni site of Ni0:85V2Se4. Although we fail to observe any structural distortion in this crystal down to 1.5 K, its electronic and thermal properties are anomalous. The observation of non-linear temperature dependence of resistivity as well as an enhanced value of the Sommerfeld coefficient = 104.0(1) mJ/molK2 suggests strong electron-electron correlations in this material. The first-principles calculations performed for NiV$_2$Se$_4$, which are also applicable to Ni0:85V2Se4, classify this material as a topological metal with Z2 = (1; 110) and coexisting electron and hole pockets at the Fermi level. The phonon spectrum lacks any soft phonon mode, consistent with the absence of periodic lattice distortion in the present experiments.
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Submitted 18 April, 2023;
originally announced April 2023.
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Superconductivity in single crystals of a quasi-one dimensional infinite chain cuprate Sr$_x$Ca$_{1-x}$CuO$_2$ at 90 K
Authors:
Neeraj K. Rajak,
Dumpala Tirumalarao,
Gourav Vaid,
Sharath Kumar C,
S. Athira,
Govindarajan Prakash,
Ashna Babu,
Trupti Gaikwad,
Shamili Chandradas,
Alex P. Andrews,
Aneesh A.,
Babu Varghese,
Manoj Raama Varma,
Arumugam Thamizhavel,
S. Ramakrishnan,
D. Jaiswal-Nagar
Abstract:
Although there is no complete theory of high temperature superconductivity, the importance of CuO$_2$ planes in cuprate superconductors is confirmed from both theory and experiments. Strong Coulomb repulsion between electrons on the CuO$_2$ plane makes the resultant electron system highly correlated and a difficult problem to solve since exact solutions of many-body Hamiltonian in two dimensions d…
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Although there is no complete theory of high temperature superconductivity, the importance of CuO$_2$ planes in cuprate superconductors is confirmed from both theory and experiments. Strong Coulomb repulsion between electrons on the CuO$_2$ plane makes the resultant electron system highly correlated and a difficult problem to solve since exact solutions of many-body Hamiltonian in two dimensions do not exist. If however, superconductivity can arise in structures having chains rather than planes and having a high critical temperature, then the high temperature superconductivity problem could become more tractable since exact solutions in one dimension do exist. In this paper, we report the observation of bulk superconductivity in single crystals of a cuprate Sr$_x$Ca$_{1-x}$CuO$_2$ at very high critical temperature, T$_c$, of $\sim$ 90 K whose structure reveals the presence of infinite double chains of Cu-O-Cu-O instead of CuO$_2$ planes, thus, ensuring quasi-one dimensional superconductivity. Bulk superconducting behaviour was observed in \textit{dc} magnetisation, \textit{ac} susceptibility as well as resistance measurements. The observation of bulk superconductivity in Sr$_x$Ca$_{1-x}$CuO$_2$ having chains of Cu-O-Cu-O rather than planes of CuO$_2$ at a high T$_c$ of 90 K is expected to profoundly impact our understanding of high temperature superconductivity.
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Submitted 17 April, 2023;
originally announced April 2023.
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Layer-resolved electronic behavior in a Kondo lattice system, CeAgAs2
Authors:
Sawani Datta,
Ram Prakash Pandeya,
Arka Bikash Dey,
A. Gloskovskii,
C. Schlueter,
T. R. F. Peixoto,
Ankita Singh,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
We investigate the electronic structure of an antiferromagnetic Kondo lattice system CeAgAs2 employing hard x-ray photoemission spectroscopy. CeAgAs2, an orthorhombic variant of HfCuSi2 structure, exhibits antiferromagnetic ground state, Kondo like resistivity upturn and compensation of magnetic moments at low temperatures. The photoemission spectra obtained at different photon energies suggest te…
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We investigate the electronic structure of an antiferromagnetic Kondo lattice system CeAgAs2 employing hard x-ray photoemission spectroscopy. CeAgAs2, an orthorhombic variant of HfCuSi2 structure, exhibits antiferromagnetic ground state, Kondo like resistivity upturn and compensation of magnetic moments at low temperatures. The photoemission spectra obtained at different photon energies suggest termination of the cleaved surface at cis-trans-As layers. The depth-resolved data show significant surface-bulk differences in the As and Ce core level spectra. The As 2p bulk spectrum shows distinct two peaks corresponding to two different As layers. The peak at higher binding energy correspond to cis-trans-As layers and is weakly hybridized with the adjacent Ce layers. The As layers between Ce and Ag-layers possess close to trivalent configuration due to strong hybridization with the neighboring atoms and the corresponding feature appear at lower binding energy. Ce 3d core level spectra show multiple features reflecting strong Ce-As hybridization and strong correlation. Intense f0 peak is observed in the surface spectrum while it is insignificant in the bulk. In addition, we observe a features at binding energy lower than the well-screened feature indicating the presence of additional interactions. This feature becomes more intense in the bulk spectra suggesting it to be a bulk property. Increase in temperature leads to a spectral weight transfer to higher binding energies in the core level spectra and a depletion of spectral intensity at the Fermi level as expected in a Kondo material. These results reveal interesting surface-bulk differences, complex interplay of intra- and inter-layer covalency, and electron correlation in the electronic structure of this novel Kondo lattice system.
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Submitted 8 April, 2023;
originally announced April 2023.
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Complexity in the hybridization physics revealed by depth-resolved photoemission spectroscopy of single crystalline novel Kondo lattice systems, CeCuX$_2$ (X = As/Sb)
Authors:
Sawani Datta,
Ram Prakash Pandeya,
Arka Bikash Dey,
A. Gloskovskii,
C. Schlueter,
T. R. F. Peixoto,
Ankita Singh,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
We investigate the electronic structure of a novel Kondo lattice system CeCuX2 (X = As/Sb) employing high resolution depth-resolved photoemission spectroscopy of high quality single crystalline materials. CeCuSb2 and CeCuAs2 represent different regimes of the Doniach phase diagram exhibiting Kondo-like transport properties and CeCuSb2 is antiferromagnetic (TN ~ 6.9 K) while CeCuAs$_2$ does not sho…
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We investigate the electronic structure of a novel Kondo lattice system CeCuX2 (X = As/Sb) employing high resolution depth-resolved photoemission spectroscopy of high quality single crystalline materials. CeCuSb2 and CeCuAs2 represent different regimes of the Doniach phase diagram exhibiting Kondo-like transport properties and CeCuSb2 is antiferromagnetic (TN ~ 6.9 K) while CeCuAs$_2$ does not show long-range magnetic order down to the lowest temperature studied. In this study, samples were cleaved in ultrahigh vacuum before the photoemission measurements and the spectra at different surface sensitivity establish the pnictogen layer having squarenet structure as the terminated surface which is weakly bound to the other layers. Cu 2p and As 2p spectra show spin-orbit split sharp peaks along with features due to plasmon excitations. Ce 3d spectra exhibit multiple features due to the hybridization of the Ce 4f/5d states with the valence states. While overall lineshape of the bulk spectral functions look similar in both the cases, the surface spectra are very different; the surface-bulk difference is significantly weaker in CeCuAs2 compared to that observed in CeCuSb2. A distinct low binding energy peak is observed in the Ce 3d spectra akin to the scenario observed in cuprates and manganites due to the Zhang-Rice singlets and/or high degree of itineracy of the conduction holes. The valence band spectra of CeCuSb$_2$ manifest highly metallic phase. In CeCuAs2, intensity at the Fermi level is significantly small suggesting a pseudogap-type behavior. These results bring out an interesting scenario emphasizing the importance and subtlety of hybridization physics underlying the exoticity of this novel Kondo system.
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Submitted 8 April, 2023;
originally announced April 2023.
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Non-Conventional Critical Behavior and Q-dependent Electron-Phonon Coupling Induced Phonon Softening in the CDW Superconductor LaPt2Si2
Authors:
Elisabetta Nocerino,
Uwe Stuhr,
Irene San Lorenzo,
Federico Mazza,
Daniel Mazzone,
Johan Hellsvik,
Shunsuke Hasegawa,
Shinichiro Asai,
Takatsugu Masuda,
Arianna Minelli,
Zakir Hossain,
Arumugam Thamizhavel,
Kim Lefmann,
Yasmine Sassa,
Martin Månsson
Abstract:
This paper reports the first experimental observation of phonons and their softening on single crystalline LaPt$_2$Si$_2$ via inelastic neutron scattering. From the temperature dependence of the phonon frequency in close proximity to the charge-density wave (CDW) $q$-vector, we obtain a CDW transition temperature of T$_{CDW}$ = 230 K and a critical exponent $β$ = 0.28 $\pm$ 0.03. This value is sug…
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This paper reports the first experimental observation of phonons and their softening on single crystalline LaPt$_2$Si$_2$ via inelastic neutron scattering. From the temperature dependence of the phonon frequency in close proximity to the charge-density wave (CDW) $q$-vector, we obtain a CDW transition temperature of T$_{CDW}$ = 230 K and a critical exponent $β$ = 0.28 $\pm$ 0.03. This value is suggestive of a non-conventional critical behavior for the CDW phase transition in LaPt$_2$Si$_2$, compatible with a scenario of CDW discommensuration (DC). The DC would be caused by the existence of two CDWs in this material, propagating separately in the non equivalent (Si1-Pt2-Si1) and (Pt1-Si2-Pt1) layers respectively, with transition temperatures T$_{CDW-1}$ = 230 K and T$_{CDW-2}$ = 110 K. A strong $q$-dependence of the electron-phonon coupling has been identified as the driving mechanism for the CDW transition at T$_{CDW-1}$ = 230 K while a CDW with 3-dimensional character, and Fermi surface quasi-nesting as a driving mechanism, is suggested for the transition at T$_{CDW-2}$ = 110 K. Our results clarify some aspects of the CDW transition in LaPt$_2$Si$_2$, which have been so far misinterpreted by both theoretical predictions and experimental observations, and give direct insight into its actual temperature dependence.
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Submitted 8 March, 2023;
originally announced March 2023.
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Evidence of The Anomalous Fluctuating Magnetic State by Pressure Driven 4f Valence Change in EuNiGe$_3$
Authors:
K. Chen,
C. Luo,
Y. Zhao F. Baudelet,
A. Maurya,
A. Thamizhavel,
U. K. Rößler,
D. Makarov,
F. Radu
Abstract:
In rare-earth compounds with valence fluctuation, the proximity of the 4f level to the Fermi energy leads to instabilities of the charge configuration and the magnetic moment. Here, we provide direct experimental evidence for an induced magnetic polarization of the Eu$^{3+}$ atomic shell with J=0, due to intra-atomic exchange and spin-orbital coupling interactions with Eu$^{2+}$ atomic shell. By a…
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In rare-earth compounds with valence fluctuation, the proximity of the 4f level to the Fermi energy leads to instabilities of the charge configuration and the magnetic moment. Here, we provide direct experimental evidence for an induced magnetic polarization of the Eu$^{3+}$ atomic shell with J=0, due to intra-atomic exchange and spin-orbital coupling interactions with Eu$^{2+}$ atomic shell. By applying external pressure, a transition from antiferromagnetic to a fluctuating behavior in a EuNiGe$_3$ single crystals is probed. Magnetic polarization is observed for both valence states of Eu$^{2+}$ and Eu$^{3+}$ across the entire pressure range. The anomalous magnetism is discussed in terms of a homogeneous intermediate valence state where frustrated Dzyaloshinskii-Moriya couplings are enhanced by the onset of spin-orbital interaction and engender a chiral spin-liquid-like precursor.
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Submitted 29 January, 2023;
originally announced January 2023.
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Coexistence of phononic Weyl, nodal line, and threefold excitations in chalcopyrite CdGeAs$_{2}$ and associated thermoelectric properties
Authors:
Vikas Saini,
Bikash Patra,
Bahadur Singh,
A. Thamizhavel
Abstract:
Realization of topologically protected quantum states leads to unprecedented opportunities for fundamental science and device applications. Here, we demonstrate the coexistence of multiple topological phononic states and calculate the associated thermoelectric properties of a chalcopyrite material CdGeAs$_2$ using first-principles theoretical modeling. CdGeAs$_{2}$ is a direct bandgap semiconducto…
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Realization of topologically protected quantum states leads to unprecedented opportunities for fundamental science and device applications. Here, we demonstrate the coexistence of multiple topological phononic states and calculate the associated thermoelectric properties of a chalcopyrite material CdGeAs$_2$ using first-principles theoretical modeling. CdGeAs$_{2}$ is a direct bandgap semiconductor with a bandgap of $0.65$ eV. By analysing the phonon spectrum and associated symmetries, we show the presence of nearly isolated Weyl, nodal line, and threefold band crossings in CdGeAs$_2$. Specifically, the two triply degenerate points (TDPs) identified on the $k_{z}$ axis are formed by the optical phonons bands 7, 8, and 9 with type-II energy dispersion. These TDPs form a time reversal pair and are connected by a straight nodal line with zero Berry phase. The TDPs formed between bands 14, 15, and 16 exhibit type-I crossings and are connected through the open straight nodal line. Our transport calculations show a large thermopower exceeding $\sim$500 and $200$ $\rm μV/K$ for the hole and electron carriers, respectively, above 500 K with a carrier doping of 10$^{18}$ cm$^{-3}$. The large thermopower in $p$-type CdGeAs$_{2}$ is a consequence of the sharp density of states appear from the presence of a heavy hole band at the $Γ$ point. We argue that the presence of topological states in the phonon bands could lead to low lattice thermal conductivity and drive a high figure-of-merit in CdGeAs$_{2}$.
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Submitted 2 January, 2023;
originally announced January 2023.
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Fragile electronic superconductivity in Bi Single crystal
Authors:
Anil Kumar,
Rajendra Loke,
Arindam Pramanik,
Rajdeep Sensarma,
Sitaram Ramakrishnan,
Om Prakash,
Biplab Bag,
Arumugam Thamizhavel,
Srinivasan Ramakrishnan
Abstract:
It was presumed that semimetal Bismuth (Bi) would not show superconductivity (SC) even at ultra-low temperatures ($<$10 mK) due to its very low carrier density ($\approx 3\times10^{17}$cm$^{-3}$). Recently, we have established bulk superconductivity in ultra-pure (99.9999\%) Bi single crystal at $\mathrm{T_C = 0.53}$ mK with an extrapolated upper critical field $\mathrm{H_C(0) = 5.2μ}$T measured a…
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It was presumed that semimetal Bismuth (Bi) would not show superconductivity (SC) even at ultra-low temperatures ($<$10 mK) due to its very low carrier density ($\approx 3\times10^{17}$cm$^{-3}$). Recently, we have established bulk superconductivity in ultra-pure (99.9999\%) Bi single crystal at $\mathrm{T_C = 0.53}$ mK with an extrapolated upper critical field $\mathrm{H_C(0) = 5.2μ}$T measured along the [$0001$] (trigonal) -crystallographic direction. At very low concentrations of the charge carriers, we are dealing with fragile Cooper pairs with an estimated large coherence length $\mathrm{ξ_{GL}(0)\approx 96 μ}$m. We also stated that one needs to go beyond the conventional electron-phonon coupling (BCS-like) mechanism to understand the SC state in Bi. Bi is a compensated semi-metal with electrons and holes as charge carriers. In order to find the charge carriers responsible for the SC, we report the temperature dependence of the anisotropic critical field along the [$01\bar 10$] (bisectrix)-crystallographic direction and compared it with the earlier data from measurements along the trigonal. Our theoretical analysis of the anisotropy of critical fields suggests that the light electrons in the three pockets of Bi bands are responsible for the SC and indicates that Bi is an extremely weak type-II (close to type-I) superconductor. Finally, we review the current theories proposed to explain the SC in Bi.
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Submitted 7 December, 2022;
originally announced December 2022.
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Structural Evolution and Onset of the Density Wave Transition in the CDW Superconductor LaPt$_2$Si$_2$ Clarified with Synchrotron XRD
Authors:
Elisabetta Nocerino,
Irene San Lorenzo,
Konstantinos Papadopulos,
Marisa Medarde,
Jike Lyu,
Yannick Maximilian Klein,
Arianna Minelli,
Zakir Hossain,
Arumugam Thamizhavel,
Kim Lefmann,
Oleh Ivashko,
Martin von Zimmermann,
Yasmine Sassa,
Martin Månsson
Abstract:
The quasi-2D Pt-based rare earth intermetallic material LaPt$_2$Si$_2$ has attracted attention as it exhibits strong interplay between charge density wave (CDW) and and superconductivity (SC). However, the most of the results reported on this material come from theoretical calculations, preliminary bulk investigations and powder samples, which makes it difficult to uniquely determine the temperatu…
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The quasi-2D Pt-based rare earth intermetallic material LaPt$_2$Si$_2$ has attracted attention as it exhibits strong interplay between charge density wave (CDW) and and superconductivity (SC). However, the most of the results reported on this material come from theoretical calculations, preliminary bulk investigations and powder samples, which makes it difficult to uniquely determine the temperature evolution of its crystal structure and, consequently, of its CDW transition. Therefore, the published literature around LaPt$_2$Si$_2$ is often controversial. In this paper, we clarify the complex evolution of the crystal structure, and the temperature dependence of the development of density wave transitions, in good quality LaPt$_2$Si$_2$ single crystals, with high resolution synchrotron X-ray diffraction data. According to our findings, on cooling from room temperature LaPt$_2$Si$_2$ undergoes a series of subtle structural transitions which can be summarised as follows: second order commensurate tetragonal ($P4/nmm$)-to-incommensurate structure followed by a first order incommensurate-to-commensurate orthorhombic ($Pmmn$) transition and then a first order commensurate orthorhombic ($Pmmn$)-to-commensurate tetragonal ($P4/nmm$). The structural transitions are accompanied by both incommensurate and commensurate superstructural distortions of the lattice. The observed behavior is compatible with discommensuration of the CDW in this material.
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Submitted 29 November, 2022; v1 submitted 22 November, 2022;
originally announced November 2022.
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Time-reversal symmetry breaking in superconducting low-carrier-density quasi-skutterudite Lu3Os4Ge13
Authors:
A. Kataria,
J. A. T. Verezhak,
O. Prakash,
R. K. Kushwaha,
A. Thamizhavel,
S. Ramakrishnan,
M. S. Scheurer,
A. D. Hillier,
R. P. Singh
Abstract:
The complex structure of the Remeika phases, the intriguing quantum states they display, and their low carrier concentrations are a strong motivation to study the nature of their superconducting phases. In this work, the microscopic properties of the superconducting phase of single-crystalline Lu$_3$Os$_4$Ge$_{13}$ are investigated by muon-spin relaxation and rotation ($μ$SR) measurements. The zer…
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The complex structure of the Remeika phases, the intriguing quantum states they display, and their low carrier concentrations are a strong motivation to study the nature of their superconducting phases. In this work, the microscopic properties of the superconducting phase of single-crystalline Lu$_3$Os$_4$Ge$_{13}$ are investigated by muon-spin relaxation and rotation ($μ$SR) measurements. The zero-field $μ$SR data reveal the presence of spontaneous static or quasi-static magnetic fields in the superconducting state, breaking time-reversal symmetry; the associated internal magnetic field scale is found to be exceptionally large ($\approx$ 0.18~mT). Furthermore, transverse-field $μ$SR measurements in the vortex state of Lu$_3$Os$_4$Ge$_{13}$ imply a complex gap function with significantly different strengths on different parts of the Fermi surface. While our measurements do not completely determine the order parameter, they strongly indicate that electron-electron interactions are essential to stabilizing pairing in the system, thus, demonstrating its unconventional nature.
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Submitted 6 November, 2022;
originally announced November 2022.
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Coupling between colossal charge density wave ordering and magnetism in Ho2Ir3Si5
Authors:
Sitaram Ramakrishnan,
Jin-Ke Bao,
Claudio Eisele,
Bikash Patra,
Minoru Nohara,
Biplab Bag,
Leila Noohinejad,
Martin Tolkiehn,
Carsten Paulmann,
Achim M. Schaller,
Toms Rekis,
Surya Rohith Kotla,
Andreas Schönleber,
Arumugam Thamizhavel,
Bahadur Singh,
Srinivasan Ramakrishnan,
Sander van Smaalen
Abstract:
Ho2Ir3Si5 belongs to the family of three-dimensional (3D) R2Ir3Si5 (R = Lu, Er and Ho) compounds that exhibit a colossal first-order charge density wave (CDW) transition where there is a strong orthorhombic-to-triclinic distortion of the lattice accompanied by superlattice reflections. The analysis by single-crystal X-ray diffraction (SXRD) has revealed that the Ir-Ir zigzag chains along c are res…
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Ho2Ir3Si5 belongs to the family of three-dimensional (3D) R2Ir3Si5 (R = Lu, Er and Ho) compounds that exhibit a colossal first-order charge density wave (CDW) transition where there is a strong orthorhombic-to-triclinic distortion of the lattice accompanied by superlattice reflections. The analysis by single-crystal X-ray diffraction (SXRD) has revealed that the Ir-Ir zigzag chains along c are responsible for the CDW in all three compounds. The replacement of the rare earth element from non-magnetic Lu to magnetic Er or Ho lowers TCDW, where TCDWLu = 200 K, TCDWEr = 150 K and TCDWHo = 90 K. Out of the three compounds, Ho2Ir3Si5 is the only system where second-order superlattice reflections could be observed, indicative of an anharmonic shape of the modulation wave. The CDW transition is observed as anomalies in the temperature dependencies of the specific heat, electrical conductivity and magnetic susceptibility, which includes a large hysteresis of 90 to 130 K for all measured properties, thus corroborating the SXRD measurements. Similar to previously reported Er2Ir3Si5, there appears to be a coupling between CDW and magnetism such that the Ho3+ magnetic moments are influenced by the CDW transition, even in the paramagnetic state. Moreover, earlier investigations on polycrystalline material revealed antiferromagnetic (AFM) ordering at TN = 5.1 K, whereas AFM order is suppressed and only the CDW is present in our highly ordered single-crystal. First-principles calculations predict Ho2Ir3Si5 to be a metal with coexisting electron and hole pockets at the Fermi level. The Ho and Ir atoms have spherically symmetric metallic-type charge density distributions that are prone to CDW distortion. Phonon calculations affirm that the Ir atoms are primarily responsible for the CDW distortion, which is in agreement with the experiment.
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Submitted 28 October, 2022;
originally announced October 2022.
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High-temperature Josephson diode
Authors:
Sanat Ghosh,
Vilas Patil,
Amit Basu,
Kuldeep,
Achintya Dutta,
Digambar A. Jangade,
Ruta Kulkarni,
A. Thamizhavel,
Jacob F. Steiner,
Felix von Oppen,
Mandar M. Deshmukh
Abstract:
Symmetry plays a critical role in determining various properties of a material. Semiconducting p-n junction diode exemplifies the engineered skew electronic response and is at the heart of contemporary electronic circuits. The non-reciprocal charge transport in a diode arises from doping-induced breaking of inversion symmetry. Breaking of time-reversal, in addition to inversion symmetry in some su…
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Symmetry plays a critical role in determining various properties of a material. Semiconducting p-n junction diode exemplifies the engineered skew electronic response and is at the heart of contemporary electronic circuits. The non-reciprocal charge transport in a diode arises from doping-induced breaking of inversion symmetry. Breaking of time-reversal, in addition to inversion symmetry in some superconducting systems, leads to an analogous device - the superconducting diode. Following the pioneering first demonstration of the superconducting diode effect (SDE), a plethora of new systems showing similar effects have been reported. SDE lays the foundation for realizing ultra-low dissipative circuits, while Josephson phenomena-based diode effect (JDE) can enable realization of protected qubits. However, SDE and JDE reported thus far are at low temperatures ($\sim$ 4 K or lower) and impede their adaptation to technological applications. Here we demonstrate a Josephson diode working up to 77 K using an artificial Josephson junction (AJJ) of twisted layers of Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ (BSCCO). The non-reciprocal response manifests as an asymmetry in the magnitude of switching currents and their distributions and appears for all twist angles. The asymmetry is induced by and tunable with a very small magnetic field applied perpendicular to the junction. We report a record asymmetry of 60 % at 20 K. We explain our results within a vortex-based scenario. Our results provide a path toward realizing superconducting quantum circuits at liquid nitrogen temperature.
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Submitted 16 April, 2023; v1 submitted 20 October, 2022;
originally announced October 2022.
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Analysis of the unconventional chiral fermions in a non-centrosymmetric chiral crystal $\textbf {PtAl}$
Authors:
Vikas Saini,
Souvik Sasmal,
Ruta Kulkarni,
Bahadur Singh,
A. Thamizhavel
Abstract:
Symmetry-protected non-trivial states in chiral topological materials hold immense potential for fundamental science and technological advances. Here, we report electrical transport, quantum oscillations, and electronic structure results of a single crystal of chiral quantum material $\rm PtAl$. Based on the de Haas-van Alphen (dHvA) oscillations, we show that the smallest Fermi pocket ($α$) posse…
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Symmetry-protected non-trivial states in chiral topological materials hold immense potential for fundamental science and technological advances. Here, we report electrical transport, quantum oscillations, and electronic structure results of a single crystal of chiral quantum material $\rm PtAl$. Based on the de Haas-van Alphen (dHvA) oscillations, we show that the smallest Fermi pocket ($α$) possesses a non-trivial Berry phase $1.16$$π$. The band associated with this Fermi pocket carries a linear energy dispersion over a substantial energy window of $\sim$700 meV that is further consistent with the calculated optical conductivity. First-principles calculations unfold that $\rm PtAl$ is a higher-fold chiral fermion semimetal where structural chirality drives the chiral fermions to lie at the high-symmetry $Γ$ and $R$ points of the cubic Brillouin zone. In the absence of spin-orbit coupling, the band crossings at $Γ$ and $\rm R$ points are three- and four-fold degenerate with a chiral charge of $-2$ and $+2$, respectively. The inclusion of spin-orbit coupling transforms these crossing points into four- and six-fold degenerate points with a chiral charge of $-4$ and $+4$. Nontrivial surface states on the $(001)$ plane connect the bulk projected chiral points through the long helical Fermi arcs that spread over the entire Brillouin zone.
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Submitted 2 June, 2022;
originally announced June 2022.
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Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal
Authors:
Souvik Sasmal,
Gourav Dwari,
Bishal Baran Maity,
Vikas Saini,
Rajib Mondal,
A. Thamizhavel
Abstract:
Anisotropic transport, Shubnikov-de Haas (SdH), and de Haas-van Alphen (dHvA) quantum oscillations studies are reported on a high-quality CoSi single crystal grown by the Czochralski method. Temperature-dependent resistivities indicate the dominating electron-electron scattering. Magnetoresistance (MR) at 2 K reaches 610% for I||[111] and B||[01-1], whereas it is 500% for I||[01-1] and B||[111]. A…
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Anisotropic transport, Shubnikov-de Haas (SdH), and de Haas-van Alphen (dHvA) quantum oscillations studies are reported on a high-quality CoSi single crystal grown by the Czochralski method. Temperature-dependent resistivities indicate the dominating electron-electron scattering. Magnetoresistance (MR) at 2 K reaches 610% for I||[111] and B||[01-1], whereas it is 500% for I||[01-1] and B||[111]. A negative slope in field-dependent Hall resistivity suggests electrons are the majority carriers. The carrier concentration extracted from Hall conductivity indicates no electron-hole compensation. In 3D CoSi, the electron transport lifetime is found to be approximately in the same order as quantum lifetime, whereas in 2D electron gas the long-range scattering drives the transport life much larger than the quantum lifetime. From linear and Hall SdH oscillations the effective masses and Dingle temperatures have been calculated. The dHvA oscillation reveals three frequencies at 18 ($γ$), 558 ($α$) and 663 T ($β$)), whereas, SdH oscillation results in only two frequencies $α$ and $β$. The $γ$ frequency observed in dHvA oscillation is a tiny hole pocket at the $Γ$ point.
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Submitted 12 May, 2022;
originally announced May 2022.
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Giant spectral renormalization and complex hybridization physics in a Kondo lattice system, CeCuSb2
Authors:
Sawani Datta,
Ram Prakash Pandeya,
Arka Bikash Dey,
A. Gloskovskii,
C. Schlueter,
Thiago Peixoto,
Ankita Singh,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
We investigate the electronic structure of a Kondo lattice system, CeCuSb2 exhibiting significant mass enhancement and Kondo-type behavior. We observe multiple features in the hard x-ray photoemission spectra of Ce core levels due to strong final-state effects. The depth-resolved data exhibit a significant change in relative intensity of the features with the surface sensitivity of the probe. The…
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We investigate the electronic structure of a Kondo lattice system, CeCuSb2 exhibiting significant mass enhancement and Kondo-type behavior. We observe multiple features in the hard x-ray photoemission spectra of Ce core levels due to strong final-state effects. The depth-resolved data exhibit a significant change in relative intensity of the features with the surface sensitivity of the probe. The extracted surface and bulk spectral functions are different and exhibit a Kondo-like feature at higher binding energies in addition to the well and poorly screened features. The core-level spectra of Sb exhibit huge and complex changes as a function of the surface sensitivity of the technique. The analysis of the experimental data suggests that the two non-equivalent Sb sites possess different electronic structures and in each category, the Sb layers close to the surface are different from the bulk ones. An increase in temperature influences the Ce-Sb hybridization significantly. The plasmon-excitation-induced loss features are also observed in all core level spectra. All these results reveal the importance of Ce-Sb hybridizations and indicate that the complex renormalization of Ce-Sb hybridization may be the reason for the exotic electronic properties of this system.
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Submitted 23 April, 2022;
originally announced April 2022.
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Vanadium doped beta-Ga2O3 single crystals: Growth, Optical and Terahertz characterization
Authors:
Maneesha Narayanan,
Ajinkya Punjal,
Emroj Hossain,
Shraddha Choudhary,
Ruta Kulkarni,
S S Prabhu Arumugam Thamizhavel,
Arnab Bhattacharya
Abstract:
We report the growth of electrically-resistive vanadium-doped beta-Ga2O3 single crystals via the optical floating zone technique. By carefully controlling the growth parameters V-doped crystals with very high electrical resistivity compared to the usual n-type V-doped beta-Ga2O3 (ne~10^(18)/cm^3) can be synthesized. The optical properties of such high resistive V-doped b-Ga2O3 are significantly di…
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We report the growth of electrically-resistive vanadium-doped beta-Ga2O3 single crystals via the optical floating zone technique. By carefully controlling the growth parameters V-doped crystals with very high electrical resistivity compared to the usual n-type V-doped beta-Ga2O3 (ne~10^(18)/cm^3) can be synthesized. The optical properties of such high resistive V-doped b-Ga2O3 are significantly different compared to the undoped and n-doped crystals. We study the polarization-dependent Raman spectra, polarization-dependent transmission, temperature-dependent photoluminescence in the optical wavelength range and the THz transmission properties in the 0.2 - 2.6 THz range. The V-doped insulating Ga2O3 crystals show strong birefringence with refractive index contrast Dn of 0.3+-0.02 at 1 THz, suggesting it to be an ideal material for optical applications in the THz region.
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Submitted 9 March, 2022;
originally announced March 2022.
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Resonant Soft X-Ray Scattering on LaPt$_2$Si$_2$
Authors:
Deepak John Mukkattukavil,
Johan Hellsvik,
Anirudha Ghosh,
Evanthia Chatzigeorgiou,
Elisabetta Nocerino,
Qisi Wang,
Karin von Arx,
Shih-Wen Huang,
Victor Ekholm,
Zakir Hossain,
Arumugum Thamizhavel,
Johan Chang,
Martin Mansson,
Lars Nordstrom,
Conny Sathe,
Marcus Agaker,
Jan-Erik Rubensson,
Yasmine Sassa
Abstract:
X-ray absorption (XAS) and Resonant Inelastic X-ray Scattering (RIXS) spectra of LaPt$_2$Si$_2$ single crystal at the Si L and La N edges are presented. The data are interpreted in terms of density functional theory, showing that the Si spectra can be described in terms of Si $s$ and $d$ local partial density of states (LPDOS), and the La spectra are due to quasi-atomic local $4f$ excitations. Cal…
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X-ray absorption (XAS) and Resonant Inelastic X-ray Scattering (RIXS) spectra of LaPt$_2$Si$_2$ single crystal at the Si L and La N edges are presented. The data are interpreted in terms of density functional theory, showing that the Si spectra can be described in terms of Si $s$ and $d$ local partial density of states (LPDOS), and the La spectra are due to quasi-atomic local $4f$ excitations. Calculations show that Pt $d$-LPDOS dominates the occupied states, and a sharp localized La $f$ state is found in the unoccupied states, in line with the observations.
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Submitted 23 February, 2022;
originally announced February 2022.
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Orthorhombic charge density wave on the tetragonal lattice of EuAl4
Authors:
Sitaram Ramakrishnan,
Surya Rohith Kotla,
Toms Rekis,
Jin-Ke Bao,
Claudio Eisele,
Leila Noohinejad,
Martin Tolkiehn,
Carsten Paulmann,
Birender Singh,
Rahul Verma,
Biplab Bag,
Ruta Kulkarni,
Arumugam Thamizhavel,
Bahadur Singh,
Srinivasan Ramakrishnan,
Sander van Smaalen
Abstract:
EuAl4 possesses the BaAl4 crystal structure type with tetragonal symmetry I4/mmm. It undergoes a charge-density-wave (CDW) transition at TCDW = 145 K and it features four consecutive antiferromagnetic phase transitions below 16 K. Here, we use single-crystal x-ray diffraction to determine incommensurately modulated crystal structure of EuAl4 in its CDW state. The CDW is shown to be incommensurate…
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EuAl4 possesses the BaAl4 crystal structure type with tetragonal symmetry I4/mmm. It undergoes a charge-density-wave (CDW) transition at TCDW = 145 K and it features four consecutive antiferromagnetic phase transitions below 16 K. Here, we use single-crystal x-ray diffraction to determine incommensurately modulated crystal structure of EuAl4 in its CDW state. The CDW is shown to be incommensurate with modulation wave vector q = (0, 0, 0.1781(3)) at 70 K. The symmetry of the incommensurately modulated crystal structure is orthorhombic with superspace group Fmmm(00σ)s00, where Fmmm is a subgroup of I4/mmm of index 2. Both the lattice and the atomic coordinates of the basic structure remain tetragonal. Symmetry breaking is entirely due to the modulation wave, where atoms Eu and Al1 have displacements exclusively along a, while the fourfold rotation would require equal displacement amplitudes along a and b. The calculated band structure of the basic structure and interatomic distances in the modulated crystal structure both indicate the aluminum atoms as location of the CDW. The temperature dependence of the specific heat reveals an anomaly at TCDW = 145 K of a magnitude similar to canonical CDW systems. The present discovery of orthorhombic symmetry for the CDW state of EuAl4 leads to the suggestion of monoclinic instead of orthorhombic symmetry for the third AFM state.
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Submitted 21 February, 2022;
originally announced February 2022.
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Terahertz Optical Properties and Birefringence in Single Crystal Vanadium doped [100] \b{eta}-Ga2O3
Authors:
Ajinkya Punjal,
Shraddha Choudhary,
Maneesha Narayanan,
Ruta Kulkarni,
Arumugam Thamizhavel,
Arnab Bhattacharya,
Shriganesh Prabhu
Abstract:
We report the Terahertz optical properties of the Vanadium doped [100] \b{eta}-Ga2O3 using Terahertz Time-Domain Spectroscopy (THz-TDS). The V-doped \b{eta}-Ga2O3 crystal shows strong birefringence in the 0.2-2.4 THz range. Further, phase retardation by the V-doped \b{eta}-Ga2O3 has been measured over the whole THz range by Terahertz Time-Domain Polarimetry (THz-TDP). It is observed that the V-dop…
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We report the Terahertz optical properties of the Vanadium doped [100] \b{eta}-Ga2O3 using Terahertz Time-Domain Spectroscopy (THz-TDS). The V-doped \b{eta}-Ga2O3 crystal shows strong birefringence in the 0.2-2.4 THz range. Further, phase retardation by the V-doped \b{eta}-Ga2O3 has been measured over the whole THz range by Terahertz Time-Domain Polarimetry (THz-TDP). It is observed that the V-doped \b{eta}-Ga2O3 crystal behaves both as a quarter waveplate (QWP) at 0.38, 1.08, 1.71, 2.28 THz, and a half waveplate (HWP) at 0.74 and 1.94 THz, respectively.
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Submitted 25 January, 2022;
originally announced January 2022.
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Solid-like to Liquid-like Behavior of Cu Diffusion in Superionic Cu2X (X=S, Se): An Inelastic Neutron Scattering and Ab-Initio Molecular Dynamics Investigation
Authors:
Sajan Kumar,
M. K. Gupta,
Prabhatasree Goel,
R. Mittal,
Olivier Delaire,
A. Thamizhavel,
S. Rols,
S. L. Chaplot
Abstract:
Cu2Se and Cu2S are excellent model systems of superionic conductors with large diffusion coefficients that have been reported to exhibit different solid-liquid-like Cu-ion diffusion. In this paper, we clarify the atomic dynamics of these compounds with temperature-dependent ab-initio molecular dynamics (AIMD) simulations and inelastic neutron scattering (INS) experiments. Using the dynamical struc…
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Cu2Se and Cu2S are excellent model systems of superionic conductors with large diffusion coefficients that have been reported to exhibit different solid-liquid-like Cu-ion diffusion. In this paper, we clarify the atomic dynamics of these compounds with temperature-dependent ab-initio molecular dynamics (AIMD) simulations and inelastic neutron scattering (INS) experiments. Using the dynamical structure factor and Van-Hove correlation function, we interrogate the jump-time, hopping length distribution and associated diffusion coefficients. In cubic-Cu2Se at 500 K, we find solid-like diffusion with Cu-jump lengths matching well the first-neighbour Cu-Cu distance of ~3 Å in the crystal, and clearly defined optic phonons involving Cu-vibrations. Above 700 K, the jump-length distribution becomes a broad maximum cantered around 4 Å, spanning the first and second neighbour lattice distances, and a concurrent broadening of the Cu-phonon density of states. Further, above 900 K, the Cu-diffusion becomes close to liquid-like, with distributions of Cu-atoms continuously connecting crystal sites, while the vibrational modes involving Cu motions are highly damped, though still not fully over-damped as in a liquid. At low temperatures, the solid-like diffusion is consistent with previous X-ray diffraction and quasielastic neutron scattering experiments, while the higher-temperature observation of the liquid-like diffusion is in agreement with previous AIMD simulations. We also report AIMD simulations in Cu2S in the hexagonal and cubic superionic phases, and observe similar solid and liquid-like diffusion at low- and high-temperatures, respectively. The calculated ionic-conductivity is in fair agreement with reported experimental values.
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Submitted 3 January, 2022;
originally announced January 2022.
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Antiferromagnetism and large magnetoresistance in GdBi single crystal
Authors:
Gourav Dwari,
Souvik Sasmal,
Bishal Maity,
Vikas Saini,
Ruta Kulkarni,
Arumugam Thamizhavel
Abstract:
Single crystal of the binary equi-atomic compound GdBi crystallizing in the rock salt type cubic crystal structure with the space group $Fm\bar{3}m$ has been grown by flux method. The electrical and magnetic measurements have been performed on well oriented single crystals. The antiferromagnetic ordering of the Gd moments is confirmed at $T_{\rm N} = 27.5$~K. The magnetization measurement performe…
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Single crystal of the binary equi-atomic compound GdBi crystallizing in the rock salt type cubic crystal structure with the space group $Fm\bar{3}m$ has been grown by flux method. The electrical and magnetic measurements have been performed on well oriented single crystals. The antiferromagnetic ordering of the Gd moments is confirmed at $T_{\rm N} = 27.5$~K. The magnetization measurement performed at $2$~K along the principal crystallographic direction [100] did not show any metamagnetic transition and no sign of saturation up to $7$~T. Zero field electrical resistivity reveals a sharp drop at $27.5$~K suggesting a reduction in the spin disorder scattering due to the antiferromagnetic alignment of the Gd moments. The residual resistivity at $2$~K is 390~n$Ω$cm suggesting a good quality of the grown crystal. The magneto resistance attains a value of $1.0~\times~10^{4}\%$ with no sign of saturation, in a field of $14$~T, at $T = 2$~K. Shubnikov de Hass (SdH) oscillations have been observed in the high field range of the magnetoresistance with five different frequencies corresponding to the extremal areas of the Fermi surface. Analysis of the Hall data revealed a near compensation of the charge carriers accounting for the extremely large magnetoresistance.
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Submitted 27 November, 2021;
originally announced November 2021.
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Valence fluctuation in Ce$_2$Re$_3$Si$_5$ and Ising-type magnetic ordering in Pr$_2$Re$_3$Si$_5$ single crystals
Authors:
Suman Sanki,
Vikash Sharma,
Souvik Sasmal,
Vikas Saini,
Gaurav dwari,
Bishal Baran Maity,
Ruta Kulkarni,
A. Thamizhavel
Abstract:
Single crystals of ${\rm Ce_2Re_3Si_5}$ and ${\rm Pr_2Re_3Si_5}$ have been grown by Czochralski method in a tetra-arc furnace. Powder x-ray diffraction confirmed that these compounds crystallize in the ${\rm U_2Mn_3Si_5}$-type tetragonal crystal structure with space group $P4/mnc$ (No. 128). The anisotropic physical properties have been studied comprehensively by measuring the magnetic susceptibil…
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Single crystals of ${\rm Ce_2Re_3Si_5}$ and ${\rm Pr_2Re_3Si_5}$ have been grown by Czochralski method in a tetra-arc furnace. Powder x-ray diffraction confirmed that these compounds crystallize in the ${\rm U_2Mn_3Si_5}$-type tetragonal crystal structure with space group $P4/mnc$ (No. 128). The anisotropic physical properties have been studied comprehensively by measuring the magnetic susceptibility, isothermal magnetization, electrical transport and specific heat. The low value of magnetic susceptibility together with no magnetic transition down to $2$~K gives evidence that the Ce-ions are in the intermediate valence state in ${\rm Ce_2Re_3Si_5}$. On the other hand ${\rm Pr_2Re_3Si_5}$ revealed a magnetic ordering at $9$~K. The sharp drop in the magnetic susceptibility and a spin flip like metamagnetic transition, for $H~\parallel~[001]$ in the magnetization plot of ${\rm Pr_2Re_3Si_5}$ suggest an Ising-type antiferromagnetic ordering. Based on magnetic susceptibility and isothermal magnetization data, a detailed crystal electric field (CEF) analysis shows that degenerate ${J} = 4$ Hund's rule derived ground state of ${\rm Pr^{3+}}$ ion splits into nine singlets with an overall splitting of $1179$~K. The magnetic ordering in ${\rm Pr_2Re_3Si_5}$ is due to the exchange-generated admixture of the lowest lying CEF energy levels. Heat capacity data reveal a sharp peak at $9$~K, that confirms the bulk nature of the magnetic ordering in ${\rm Pr_2Re_3Si_5}$.
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Submitted 20 November, 2023; v1 submitted 24 November, 2021;
originally announced November 2021.
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Weak antilocalization and Shubnikov-de Haas oscillations in CaCuSb single crystal
Authors:
Souvik Sasmal,
Vikas Saini,
Nicolas Bruyant,
Rajib Mondal,
Ruta Kulkarni,
Bahadur Singh,
Vikram Tripathi,
A. Thamizhavel
Abstract:
Quantum oscillations in both linear and Hall resistivities and weak antilocalization (WAL) are barely observed in bulk single crystals. Here we report the transport properties of a CaCuSb single crystal that crystallizes in the hexagonal crystal structure. The magnetotransport studies reveal WAL and Shubnikov-de Haas (SdH) quantum oscillations with a unique frequency at 314 T. A cusp-like behavior…
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Quantum oscillations in both linear and Hall resistivities and weak antilocalization (WAL) are barely observed in bulk single crystals. Here we report the transport properties of a CaCuSb single crystal that crystallizes in the hexagonal crystal structure. The magnetotransport studies reveal WAL and Shubnikov-de Haas (SdH) quantum oscillations with a unique frequency at 314 T. A cusp-like behavior in the low field regime of magnetotransport for J // (ab)-plane and B // [0001] confirms the WAL in CaCuSb. Angular-dependent normalized magnetoconductance and SdH oscillations studies reveal that the observed phenomena originate from the 2D transport channels. The high magnetic field (up to 45 T) experiments demonstrate plateau-like features in the Hall measurements. The first-principles calculations unfold that CaCuSb is a non-topological semimetal with dominant hole carries at the Fermi level. Our study reveals that CaCuSb is a promising candidate to explore the quasi-2D quantum transport phenomenon in the transition metal pnictide materials.
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Submitted 9 November, 2021;
originally announced November 2021.
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Nanoscale devices with superconducting electrodes to locally channel current in 3D Weyl semimetals
Authors:
Biswajit Datta,
Jaykumar Vaidya,
Subhamoy Ghatak,
Raghav Dhingra,
Rajib Mondal,
John Jesudasan,
A. Thamizhavel,
Mandar M. Deshmukh
Abstract:
We report on the fabrication of nano-devices on the \hkl[-1 0 1] surface of a Weyl semimetal, a macroscopic crystal of TaAs, and low-temperature transport measurements. We can implement electron beam lithography by peeling off and transferring the resist for nanofabrication onto the irregular crystal. We fabricate the device electrodes with superconducting Niobium nitride (NbN) to control the curr…
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We report on the fabrication of nano-devices on the \hkl[-1 0 1] surface of a Weyl semimetal, a macroscopic crystal of TaAs, and low-temperature transport measurements. We can implement electron beam lithography by peeling off and transferring the resist for nanofabrication onto the irregular crystal. We fabricate the device electrodes with superconducting Niobium nitride (NbN) to control the current flow through the intended active area of the devices. Our device structure enables the reduction of the current jetting effect, and we demonstrate the negative magnetoresistance measurement as a function of angle. The high field magnetotransport show three distinct oscillation frequencies corresponding to the three bands at the Fermi level. Resistance measured in the low magnetic field shows the usual weak anti-localization dip near the zero-field -- a signature of a Weyl material. Our method of fabricating devices with superconducting electrodes provides a way to probe the electrical properties of macroscopic single crystals at the nanoscale. As we use conventional lithographic techniques for patterning, this method can be extended to a wide gamut of electrode materials and a large class of 3D quantum materials.
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Submitted 4 October, 2021;
originally announced October 2021.
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Emergence of well screened states in a superconducting material of the CaFe$_2$As$_2$ family
Authors:
Ram Prakash Pandeya,
Anup Pradhan Sakhya,
Sawani Datta,
Tanusree Saha,
Giovanni De Ninno,
Rajib Mondal,
C. Schlueter,
A. Gloskovskii,
Paolo Moras,
Matteo Jugovac,
Carlo Carbone,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
Coupling among conduction electrons (e.g. Zhang-Rice singlet) are often manifested in the core level spectra of exotic materials such as cuprate superconductors, manganites, etc. These states are believed to play key roles in the ground state properties and appear as low binding energy features. To explore such possibilities in the Fe-based systems, we study the core level spectra of a superconduc…
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Coupling among conduction electrons (e.g. Zhang-Rice singlet) are often manifested in the core level spectra of exotic materials such as cuprate superconductors, manganites, etc. These states are believed to play key roles in the ground state properties and appear as low binding energy features. To explore such possibilities in the Fe-based systems, we study the core level spectra of a superconductor, CaFe$_{1.9}$Co$_{0.1}$As$_2$ (CaCo122) in the CaFe$_2$As$_2$ (Ca122) family employing high-resolution hard $x$-ray photoemission spectroscopy. While As core levels show almost no change with doping and cooling, Ca 2$p$ peak of CaCo122 show reduced surface contribution relative to Ca122 and a gradual shift of the peak position towards lower binding energies with cooling. In addition, we discover emergence of a feature at lower binding energy side of the well screened Fe 2$p$ signal in CaCo122. The intensity of this feature grows with cooling and indicate additional channels to screen the core holes. The evolution of this feature in the superconducting composition and it's absence in the parent compound suggests relevance of the underlying interactions in the ground state properties of this class of materials. These results reveal a new dimension in the studies of Fe-based superconductors and the importance of such states in the unconventional superconductivity in general.
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Submitted 25 September, 2021;
originally announced September 2021.
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Behavior of gapped and ungapped Dirac cones in an antiferromagnetic topological metal, SmBi
Authors:
Anup Pradhan Sakhya,
Shiv Kumar,
Arindam Pramanik,
Ram Prakash Pandeya,
Rahul Verma,
Bahadur Singh,
Sawani Datta,
Souvik Sasmal,
Rajib Mondal,
Eike F. Schwier,
Kenya Shimada,
A. Thamizhavel,
Kalobaran Maiti
Abstract:
We studied the behavior of nontrivial Dirac fermion states in an antiferromagnetic metal SmBi using angle-resolved photoemission spectroscopy (ARPES). The experimental results exhibit multiple Fermi pockets around $\overlineΓ$ and $\overline{M}$ points along with a band inversion in the spectrum along the $\overlineΓ$-$\overline{M}$ line consistent with the density functional theory results. In ad…
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We studied the behavior of nontrivial Dirac fermion states in an antiferromagnetic metal SmBi using angle-resolved photoemission spectroscopy (ARPES). The experimental results exhibit multiple Fermi pockets around $\overlineΓ$ and $\overline{M}$ points along with a band inversion in the spectrum along the $\overlineΓ$-$\overline{M}$ line consistent with the density functional theory results. In addition, ARPES data reveal Dirac cones at $\overlineΓ$ and $\overline{M}$ points within the energy gap of the bulk bands. The Dirac cone at $\overline{M}$ exhibit a distinct Dirac point and is intense in the high photon energy data while the Dirac cone at $\overlineΓ$ is intense at low photon energies. Employing ultra-high-resolution ARPES, we discover destruction of a Fermi surface constituted by the surface states across the Neél temperature of 9 K. Interestingly, the Dirac cone at $\overlineΓ$ is found to be gapped at 15 K and the behavior remains similar across the magnetic transition. These results reveal complex momentum dependent gap formation and fermi surface destruction across magnetic transition in an exotic correlated topological material; the interplay between magnetism and topology in this system calls for ideas beyond existing theoretical models.
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Submitted 25 August, 2022; v1 submitted 25 September, 2021;
originally announced September 2021.
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Growth and characterization of high-quality single-crystalline SnTe retaining cubic symmetry down to the lowest temperature studied
Authors:
Ayanesh Maiti,
Ankita Singh,
Kartik K. Iyer,
Arumugam Thamizhavel
Abstract:
SnTe, an archetypical topological crystalline insulator, often shows a transition from a highly symmetric cubic phase to a rhombohedral structure at low temperatures. In order to achieve the highly symmetric cubic phase at low temperatures suitable for quantum behaviour, we have employed the modified Bridgman method to grow a high-quality single-crystalline sample of SnTe. Analysis of the crystal…
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SnTe, an archetypical topological crystalline insulator, often shows a transition from a highly symmetric cubic phase to a rhombohedral structure at low temperatures. In order to achieve the highly symmetric cubic phase at low temperatures suitable for quantum behaviour, we have employed the modified Bridgman method to grow a high-quality single-crystalline sample of SnTe. Analysis of the crystal structure using Laue diffraction and rocking curve measurements show a very high degree of single crystallinity of the sample. Resistivity and the specific heat data do not show the signature of structural transition down to the lowest temperature studied. The magnetic susceptibility shows diamagnetic behaviour. All these properties manifest the behaviour of a typical bulk semiconductor with conducting surface states as expected in a topological material. Detailed powder x-ray diffraction measurements show cubic structure in the whole temperature range studied.
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Submitted 17 November, 2021; v1 submitted 3 September, 2021;
originally announced September 2021.
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Anomalies in the temperature evolution of the Dirac states in a topological crystalline insulator SnTe
Authors:
Ayanesh Maiti,
Ram Prakash Pandeya,
Bahadur Singh,
Kartik K Iyer,
A Thamizhavel,
Kalobaran Maiti
Abstract:
Discovery of topologically protected surface states, believed to be immune to weak disorder and thermal effects, opened up a new avenue to reveal exotic fundamental science and advanced technology. While time-reversal symmetry plays the key role in most such materials, the bulk crystalline symmetries such as mirror symmetry preserve the topological properties of topological crystalline insulators…
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Discovery of topologically protected surface states, believed to be immune to weak disorder and thermal effects, opened up a new avenue to reveal exotic fundamental science and advanced technology. While time-reversal symmetry plays the key role in most such materials, the bulk crystalline symmetries such as mirror symmetry preserve the topological properties of topological crystalline insulators (TCIs). It is apparent that any structural change may alter the topological properties of TCIs. To investigate this relatively unexplored landscape, we study the temperature evolution of the Dirac fermion states in an archetypical mirror-symmetry protected TCI, SnTe employing high-resolution angle-resolved photoemission spectroscopy and density functional theory studies. Experimental results reveal a perplexing scenario; the bulk bands observed at 22 K move nearer to the Fermi level at 60 K and again shift back to higher binding energies at 120 K. The slope of the surface Dirac bands at 22 K becomes smaller at 60 K and changes back to a larger value at 120 K. Our results from the first-principles calculations suggest that these anomalies can be attributed to the evolution of the hybridization physics with complex structural changes induced by temperature. In addition, we discover drastically reduced intensity of the Dirac states at the Fermi level at high temperatures may be due to complex evolution of anharmonicity, strain, etc. These results address robustness of the topologically protected surface states due to thermal effects and emphasize importance of covalency and anharmonicity in the topological properties of such emerging quantum materials.
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Submitted 14 July, 2021;
originally announced July 2021.
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Linear unsaturated magnetoresistance in YSi single crystal
Authors:
Vikas Saini,
Souvik Sasmal,
Ruta Kulkarni,
Arumugam Thamizhavel
Abstract:
Linear magnetoresistance is a phenomenon that has been observed in a few topological compounds that originate from classical and quantum phenomena. Here, we performed electrical transport measurements, in zero and applied magnetic fields, on the YSi single crystal along all three principal crystallographic directions of the orthorhombic crystal structure. For $I~\parallel~[001]$ and…
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Linear magnetoresistance is a phenomenon that has been observed in a few topological compounds that originate from classical and quantum phenomena. Here, we performed electrical transport measurements, in zero and applied magnetic fields, on the YSi single crystal along all three principal crystallographic directions of the orthorhombic crystal structure. For $I~\parallel~[001]$ and $H~\parallel~[100]$ direction above $\approx 10$~T, mobility fluctuation driven linear magnetoresistance is observed without any sign of saturation up to $14$~T magnetic field. Anisotropy in the Fermi surface is immanent from the angular dependence of the magnetoresistance. Kohler rule violation is observed in this system and Hall data signifies multiple charge carriers in YSi.
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Submitted 14 June, 2021;
originally announced June 2021.
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Fermi surface studies of a non-trivial topological compound YSi
Authors:
Vikas Saini,
Souvik Sasmal,
Ruta Kulkarni,
Bahadur Singh,
A. Thamizhavel
Abstract:
The Fermi surface properties of a nontrivial system YSi is investigated by de Haas-van Alphen (dHvA) oscillation measurements combined with the first-principle calculations. Three main frequencies ($α$, $β$, $γ$) are probed up to $14$~T magnetic field in dHvA oscillations. The $α$-branch corresponding to $21$~T frequency possesses non-trivial topological character with $π$ Berry phase and a linear…
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The Fermi surface properties of a nontrivial system YSi is investigated by de Haas-van Alphen (dHvA) oscillation measurements combined with the first-principle calculations. Three main frequencies ($α$, $β$, $γ$) are probed up to $14$~T magnetic field in dHvA oscillations. The $α$-branch corresponding to $21$~T frequency possesses non-trivial topological character with $π$ Berry phase and a linear dispersion along $Γ$ to $Z$ direction with a small effective mass of $0.069~m_e$ with second-lowest Landau-level up to $14$~T. For $B~\parallel$~[010] direction, the 295~T frequency exhibits non-trivial $2D$ character with $1.24π$ Berry phase and a high Fermi velocity of $6.7 \times 10^5$~ms$^{-1}$. The band structure calculations reveal multiple nodal crossings in the vicinity of Fermi energy $E_f$ without spin-orbit coupling (SOC). Inclusion of SOC opens a small gap in the nodal crossings and results in nonsymmorphic symmetry enforced Dirac points at some high symmetry points, suggesting YSi to be a symmetry enforced topological metal.
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Submitted 10 February, 2021; v1 submitted 8 February, 2021;
originally announced February 2021.
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Nodeless superconductivity in the charge density wave superconductor LaPt$_2$Si$_2$
Authors:
Z. Y. Nie,
L. C. Yin,
A. Thamizhavel,
A. Wang,
B. Shen,
L. Q. Che,
F. Du,
Z. Hossain,
M. Smidman,
X. Lu,
H. Q. Yuan
Abstract:
We have studied the superconducting gap structure of LaPt$_2$Si$_2$ by measuring the temperature dependence of the London penetration depth shift $Δλ(T)$ and point contact spectroscopy of single crystals. $Δλ(T)$ shows an exponential temperature dependence at low temperatures, and the derived normalized superfluid density $ρ_{s}(T)$ can be well described by a single-gap s-wave model. The point-con…
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We have studied the superconducting gap structure of LaPt$_2$Si$_2$ by measuring the temperature dependence of the London penetration depth shift $Δλ(T)$ and point contact spectroscopy of single crystals. $Δλ(T)$ shows an exponential temperature dependence at low temperatures, and the derived normalized superfluid density $ρ_{s}(T)$ can be well described by a single-gap s-wave model. The point-contact conductance spectra can also be well fitted by an s-wave Blonder-Tinkham-Klapwijk model, where the gap value shows a typical BCS temperature and magnetic field dependence consistent with type-II superconductivity. These results suggest fully gapped superconductivity in LaPt$_2$Si$_2$, with moderately strong electron-phonon coupling.
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Submitted 27 January, 2021;
originally announced January 2021.
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Synchrotron x-ray diffraction studies of the $α\rightleftharpoons β$ structural phase transition in Sn and Sn-Cu
Authors:
A. Mazumdar,
A. Thamizhavel,
V. Nanal,
R. G. Pillay,
A. Upadhyay,
V. Vatsa,
A. Reza,
A. Shrivastava,
Bhagyashree Chalke,
S. Mallikarjunachary
Abstract:
The transformation between the metallic ($β$) and semi-conducting ($α$) allotropes of tin is still not well understood. The phase transition temperature stated in the literature, 286.2 K, seems to be inconsistent with recent calorimetric measurements. In this paper, this intriguing aspect has been explored in Sn and Sn-Cu (alloyed 0.5% Cu by weight) using temperature resolved synchrotron x-ray dif…
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The transformation between the metallic ($β$) and semi-conducting ($α$) allotropes of tin is still not well understood. The phase transition temperature stated in the literature, 286.2 K, seems to be inconsistent with recent calorimetric measurements. In this paper, this intriguing aspect has been explored in Sn and Sn-Cu (alloyed 0.5% Cu by weight) using temperature resolved synchrotron x-ray diffraction measurements performed at the Indus-2 facility. Additionally, the $α\rightleftharpoons β$ Sn transition has been recorded using in-situ heating/cooling experiments in a scanning electron microscope. Based on these measurements, a protocol has been suggested to reduce the formation of $α$-Sn in potentially susceptible systems. This will be useful in experiments like TIN.TIN (The INdia-based TIN detector), which proposes to employ ~100 - 1000 kg of superconducting tin-based detectors to search for neutrinoless double beta decay in the isotope $^{124}$Sn.
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Submitted 12 March, 2021; v1 submitted 7 January, 2021;
originally announced January 2021.
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Superconductivity in amorphous RexZr (x ~ 6) thin films
Authors:
Surajit Dutta,
Vivas Bagwe,
Gorakhnath Chaurasiya,
A. Thamizhavel,
Rudheer Bapat,
Pratap Raychaudhuri,
Sangita Bose
Abstract:
We report the growth, characterization and superconducting properties of a new amorphous superconductor, RexZr ( x ~ 6 ), in thin film form. Films were grown by pulsed laser deposition with the substrate kept at room temperature. Films with thickness larger than 40 nm showed a superconducting transition temperature (Tc) of 5.9 K. Superconducting properties were measured for films with varying thic…
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We report the growth, characterization and superconducting properties of a new amorphous superconductor, RexZr ( x ~ 6 ), in thin film form. Films were grown by pulsed laser deposition with the substrate kept at room temperature. Films with thickness larger than 40 nm showed a superconducting transition temperature (Tc) of 5.9 K. Superconducting properties were measured for films with varying thickness from 120 to 3 nm. The normal state resistance scales linearly with inverse of thickness. The transition temperature, critical field, coherence length, penetration depth and superconducting energy gap changes marginally with decreasing film thickness down to 8 nm. Scanning tunneling spectroscopy and penetration depth measurements provide evidence for a single gap strong coupling s-wave superconductor. Magneto-transport properties indicate a rich magnetic field-temperature phase diagram with the possibility of vortex liquid phases existing over a large fraction of the mixed state.
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Submitted 22 December, 2020;
originally announced December 2020.
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Exceptional Dirac states in a non-centrosymmetric superconductor, BiPd
Authors:
Arindam Pramanik,
Ram Prakash Pandeya,
D. V. Vyalikh,
Alexander Generalov,
Paolo Moras,
Asish K. Kundu,
Polina M. Sheverdyaeva,
Carlo Carbone,
Bhanu Joshi,
A. Thamizhavel,
S. Ramakrishnan,
Kalobaran Maiti
Abstract:
Quantum materials having Dirac fermions in conjunction with superconductivity is believed to be the candidate materials to realize exotic physics as well as advanced technology. Angle resolved photoemission spectroscopy (ARPES), a direct probe of the electronic structure, has been extensively used to study these materials. However, experiments often exhibit conflicting results on dimensionality an…
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Quantum materials having Dirac fermions in conjunction with superconductivity is believed to be the candidate materials to realize exotic physics as well as advanced technology. Angle resolved photoemission spectroscopy (ARPES), a direct probe of the electronic structure, has been extensively used to study these materials. However, experiments often exhibit conflicting results on dimensionality and momentum of the Dirac Fermions (e.g. Dirac states in BiPd, a novel non-centrosymmetric superconductor), which is crucial for the determination of the symmetry, time-reversal invariant momenta and other emerging properties. Employing high-resolution ARPES at varied conditions, we demonstrated a methodology to identify the location of the Dirac node accurately and discover that the deviation from two-dimensionality of the Dirac states in BiPd proposed earlier is not a material property. These results helped to reveal the topology of the anisotropy of the Dirac states accurately. We have constructed a model Hamiltonian considering higher-order spin-orbit terms and demonstrate that this model provides an excellent description of the observed anisotropy. Intriguing features of the Dirac states in a non-centrosymmetric superconductor revealed in this study expected to have significant implication in the properties of topological superconductors.
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Submitted 10 December, 2020;
originally announced December 2020.