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Straight versus Spongy -- Effect of Tortuosity on Polymer Imbibition into Nanoporous Matrices Assessed by Segmentation-Free Analysis of 3D Sample Reconstructions
Authors:
Fernando Vazquez Luna,
Anjani K. Maurya,
Juliana Martins de Souza e Silva,
Guido Dittrich,
Theresa Paul,
Dirk Enke,
Patrick Huber,
Ralf Wehrspohn,
Martin Steinhart
Abstract:
We comparatively analyzed imbibition of polystyrene (PS) into two complementary pore models having pore diameters of about 380 nm and hydroxyl-terminated inorganic-oxidic pore walls, controlled porous glass (CPG) and self-ordered porous alumina (AAO), by X-ray computed tomography and EDX spectroscopy. CPG contains continuous spongy-tortuous pore systems. AAO containing arrays of isolated straight…
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We comparatively analyzed imbibition of polystyrene (PS) into two complementary pore models having pore diameters of about 380 nm and hydroxyl-terminated inorganic-oxidic pore walls, controlled porous glass (CPG) and self-ordered porous alumina (AAO), by X-ray computed tomography and EDX spectroscopy. CPG contains continuous spongy-tortuous pore systems. AAO containing arrays of isolated straight cylindrical pores is a reference pore model with a tortuosity close to 1. Comparative evaluation of the spatiotemporal imbibition front evolution yields important information on the pore morphology of a probed tortuous matrix like CPG and on the imbibition mechanism. To this end, pixel brightness dispersions in tomographic 3D reconstructions and 2D EDX maps of infiltrated AAO and CPG samples were condensed into 1D brightness dispersion profiles normal to the membrane surfaces. Their statistical analysis yielded positions and widths of the imbibition fronts without segmentation or determination of pore positions. The retardation of the imbibition front movement with respect to AAO reference samples may be used as a descriptor for the tortuosity of a tested porous matrix. The velocity of the imbibition front movements in CPG equaled two-thirds of the velocity of the imbibition front movements in AAO. Moreover, the dynamics of the imbibition front broadening discloses whether porous matrices are dominated by cylindrical neck-like pore segments or by nodes. Independent single-meniscus movements in cylindrical AAO pores result in faster imbibition front broadening than in CPG, in which a morphology dominated by nodes results in slower cooperative imbibition front movements involving several menisci.
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Submitted 26 January, 2024;
originally announced January 2024.
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Impact of the Ce $4f$ states in the electronic structure of the intermediate-valence superconductor CeIr$_3$
Authors:
Shin-ichi Fujimori,
Ikuto Kawasaki,
Yukiharu Takeda,
Hiroshi Yamagami,
Norimasa Sasabe,
Yoshiki J. Sato,
Ai Nakamura,
Yusei Shimizu,
Arvind Maurya,
Yoshiya Homma,
Dexin Li,
Fuminori Honda,
Dai Aoki
Abstract:
The electronic structure of the $f$-based superconductor $\mathrm{CeIr_3}$ was studied by photoelectron spectroscopy. The energy distribution of the $\mathrm{Ce}~4f$ states were revealed by the $\mathrm{Ce}~3d-4f$ resonant photoelectron spectroscopy. The $\mathrm{Ce}~4f$ states were mostly distributed in the vicinity of the Fermi energy, suggesting the itinerant character of the $\mathrm{Ce}~4f$ s…
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The electronic structure of the $f$-based superconductor $\mathrm{CeIr_3}$ was studied by photoelectron spectroscopy. The energy distribution of the $\mathrm{Ce}~4f$ states were revealed by the $\mathrm{Ce}~3d-4f$ resonant photoelectron spectroscopy. The $\mathrm{Ce}~4f$ states were mostly distributed in the vicinity of the Fermi energy, suggesting the itinerant character of the $\mathrm{Ce}~4f$ states. The contribution of the $\mathrm{Ce}~4f$ states to the density of states (DOS) at the Fermi energy was estimated to be nearly half of that of the $\mathrm{Ir}~5d$ states, implying that the $\mathrm{Ce}~4f$ states have a considerable contribution to the DOS at the Fermi energy. The $\mathrm{Ce}~3d$ core-level and $\mathrm{Ce}~3d$ X-ray absorption spectra were analyzed based on a single-impurity Anderson model. The number of the $\mathrm{Ce}~4f$ states in the ground state was estimated to be $0.8-0.9$, which is much larger than the values obtained in the previous studies (i.e., $0-0.4$).
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Submitted 6 November, 2023;
originally announced November 2023.
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Fermi surface reconstruction due to the orthorhombic distortion in Dirac semimetal YbMnSb$_2$
Authors:
Dilip Bhoi,
Feng Ye,
Hanming Ma,
Xiaoling Shen,
Arvind Maurya,
Shusuke Kasamatsu,
Takahiro Misawa,
Kazuyoshi Yoshimi,
Taro Nakajima,
Masaaki Matsuda,
Yoshiya Uwatoko
Abstract:
Dirac semi-metal with magnetic atoms as constituents delivers an interesting platform to investigate the interplay of Fermi surface (FS) topology, electron correlation, and magnetism. One such family of semi-metal is YbMn$Pn_2$ ($Pn$ = Sb, Bi), which is being actively studied due to the intertwined spin and charge degrees of freedom. In this Letter, we investigate the relationship between the magn…
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Dirac semi-metal with magnetic atoms as constituents delivers an interesting platform to investigate the interplay of Fermi surface (FS) topology, electron correlation, and magnetism. One such family of semi-metal is YbMn$Pn_2$ ($Pn$ = Sb, Bi), which is being actively studied due to the intertwined spin and charge degrees of freedom. In this Letter, we investigate the relationship between the magnetic/crystal structures and FS topology of YbMnSb$_2$ using single crystal x-ray diffraction, neutron scattering, magnetic susceptibility, magnetotransport measurement and complimentary DFT calculation. Contrary to previous reports, the x-ray and neutron diffraction reveal that YbMnSb$_2$ crystallizes in an orthorhombic $Pnma$ structure with notable anti-phase displacement of the magnetic Mn ions that increases in magnitude upon cooling. First principles DFT calculation reveals a reduced Brillouin zone and more anisotropic FS of YbMnSb$_2$ compared to YbMnBi$_2$ as a result of the orthorhombicity. Moreover, the hole type carrier density drops by two orders of magnitude as YbMnSb$_2$ orders antiferromagnetically indicating band folding in magnetic ordered state. In addition, the Landau level fan diagram yields a non-trivial nature of the SdH quantum oscillation frequency arising from the Dirac-like Fermi pocket. These results imply that YbMnSb$_2$ is an ideal platform to explore the interplay of subtle lattice distortion, magnetic order, and topological transport arising from relativistic quasiparticles.
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Submitted 22 June, 2023;
originally announced June 2023.
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Evidence of The Anomalous Fluctuating Magnetic State by Pressure Driven 4f Valence Change in EuNiGe$_3$
Authors:
K. Chen,
C. Luo,
Y. Zhao F. Baudelet,
A. Maurya,
A. Thamizhavel,
U. K. Rößler,
D. Makarov,
F. Radu
Abstract:
In rare-earth compounds with valence fluctuation, the proximity of the 4f level to the Fermi energy leads to instabilities of the charge configuration and the magnetic moment. Here, we provide direct experimental evidence for an induced magnetic polarization of the Eu$^{3+}$ atomic shell with J=0, due to intra-atomic exchange and spin-orbital coupling interactions with Eu$^{2+}$ atomic shell. By a…
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In rare-earth compounds with valence fluctuation, the proximity of the 4f level to the Fermi energy leads to instabilities of the charge configuration and the magnetic moment. Here, we provide direct experimental evidence for an induced magnetic polarization of the Eu$^{3+}$ atomic shell with J=0, due to intra-atomic exchange and spin-orbital coupling interactions with Eu$^{2+}$ atomic shell. By applying external pressure, a transition from antiferromagnetic to a fluctuating behavior in a EuNiGe$_3$ single crystals is probed. Magnetic polarization is observed for both valence states of Eu$^{2+}$ and Eu$^{3+}$ across the entire pressure range. The anomalous magnetism is discussed in terms of a homogeneous intermediate valence state where frustrated Dzyaloshinskii-Moriya couplings are enhanced by the onset of spin-orbital interaction and engender a chiral spin-liquid-like precursor.
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Submitted 29 January, 2023;
originally announced January 2023.
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Disappearance of spin glass behavior in ThCr2Si2-type intermetallic PrAu2Si2
Authors:
D. X. Li,
Y. Shimizu,
A. Nakamura,
Y. J. Sato,
A. Maurya,
Y. Homma,
F. Honda,
D. Aoki
Abstract:
It is unexpected that a spin-glass transition, which generally occurs only in the system with some form of disorder, was observed in the ThCr2Si2-type compound PrAu2Si2 at a temperature of ~3 K. This puzzling phenomenon was later explained based on a novel dynamic frustration model that does not involve static disorder. We present the results of re-verification of the reported spin-glass behaviors…
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It is unexpected that a spin-glass transition, which generally occurs only in the system with some form of disorder, was observed in the ThCr2Si2-type compound PrAu2Si2 at a temperature of ~3 K. This puzzling phenomenon was later explained based on a novel dynamic frustration model that does not involve static disorder. We present the results of re-verification of the reported spin-glass behaviors by measuring the physical properties of three polycrystalline PrAu2Si2 samples annealed under different conditions. Indeed, in the sample annealed at 827 C for one week, a spin-glass transition does occur at a temperature of Tf=2.8 K as that reported previously in the literature. However, it is newly found that the spin-glass effect is actually more pronounced in the as-cast sample, and almost completely disappears in the well-annealed (at 850 C for 4 weeks) sample. The apparent sample dependence of the magnetic characteristics of PrAu2Si2 is discussed by comparing it with similar phenomena observed in the isomorphic compounds URh2Ge2 and CeAu2Si2. Our experimental results strongly suggest that the spin-glass behavior observed in the as cast and insufficient annealed samples is most likely due to the presence of small amount of crystalline impurities and/or partial site disorder on the Au and Si sublattices, and thus is not the inherent characteristic of ideal ThCr2Si2-type PrAu2Si2. The perfectly ordered PrAu2Si2 should be regarded as a paramagnetic system with obvious crystal-field effects.
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Submitted 15 September, 2021;
originally announced September 2021.
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Mott transition, magnetic and orbital orders in the ground state of the two-band Hubbard model using variational slave-spin mean field formalism
Authors:
Arun Kumar Maurya,
Md. Tahir Hossain Sarder,
Amal Medhi
Abstract:
We study the ground state of the Hubbard model on a square lattice with two degenerate orbitals per site and at integer fillings as a function of onsite Hubbard repulsion $U$ and Hund's intra-atomic exchange coupling $J$. We use a variational slave-spin mean field (VSSMF) method which allows symmetry broken states to be studied within the computationally less intensive slave-spin mean field formal…
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We study the ground state of the Hubbard model on a square lattice with two degenerate orbitals per site and at integer fillings as a function of onsite Hubbard repulsion $U$ and Hund's intra-atomic exchange coupling $J$. We use a variational slave-spin mean field (VSSMF) method which allows symmetry broken states to be studied within the computationally less intensive slave-spin mean field formalism, thus making the method more powerful to study strongly correlated electron physics. The results show that at half-filling, the ground state at smaller $U$ is a Slater antiferromagnet (AF) with substantial local charge fluctuations. As $U$ is increased, the AF state develops a Heisenberg behavior, finally undergoing a first order transition to a Mott insulating AF state at a critical interaction $U_c$ which is of the order of the bandwidth. Introducing the Hund's coupling $J$ correlates the system more and reduces $U_c$ drastically. At quarter-filling with one electron per site, the ground state at smaller $U$ is paramagnetic metallic. At finite Hund's coupling $J$, as interaction is increased above a lower critical value $U_{c1}$, it goes to a fully spin polarized ferromagnetic state coexisting with an antiferro-orbital order. The system eventually becomes Mott insulating at a higher critical value $U_{c2}$. The results as a function of $U$ and $J$ are thoroughly discussed.
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Submitted 27 April, 2021;
originally announced April 2021.
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Pressure induced multicriticality and electronic instability in quasi-kagome ferromagnet URhSn
Authors:
Arvind Maurya,
Dilip Bhoi,
Fuminori Honda,
Yusei Shimizu,
Ai Nakamura,
Yoshiki J. Sato,
Dexin Li,
Yoshiya Homma,
M. Sathiskumar,
Jun Gouchi,
Yoshiya Uwatoko,
Dai Aoki
Abstract:
We report an unconventional class of pressure induced quantum phase transition, possessing two bicritical points at 6.25 GPa in URhSn. This unique transformation accompanies a Fermi surface reconstruction, demarcating competing ordered phases suitably described with localized and itinerant description of the magnetic $5f$-electrons. Ferromagnetic fluctuations over a wide range of temperatures and…
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We report an unconventional class of pressure induced quantum phase transition, possessing two bicritical points at 6.25 GPa in URhSn. This unique transformation accompanies a Fermi surface reconstruction, demarcating competing ordered phases suitably described with localized and itinerant description of the magnetic $5f$-electrons. Ferromagnetic fluctuations over a wide range of temperatures and pressures in the pressure-induced low temperature phase are evidenced by a robust $T^{5/3}$ temperature dependence of resistivity up to 11 GPa, which is a characteristic of elusive marginal Fermi-liquid state.
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Submitted 12 March, 2021;
originally announced March 2021.
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Splitting Fermi Surfaces and Heavy Electronic States in Non-Centrosymmetric U3Ni3Sn4
Authors:
Arvind Maurya,
Hisatomo Harima,
Ai Nakamura,
Yusei Shimizu,
Yoshiya Homma,
DeXin Li,
Fuminori Honda,
Yoshiki J. Sato,
Dai Aoki
Abstract:
We report the single-crystal growth of the non-centrosymmetric paramagnet U3Ni3Sn4 by the Bridgman method and the Fermi surface properties detected by de Haas-van Alphen (dHvA) experiments. We have also investigated single-crystal U3Ni3Sn4 by single-crystal X-ray diffraction, magnetization, electrical resistivity, and heat capacity measurements. The angular dependence of the dHvA frequencies revea…
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We report the single-crystal growth of the non-centrosymmetric paramagnet U3Ni3Sn4 by the Bridgman method and the Fermi surface properties detected by de Haas-van Alphen (dHvA) experiments. We have also investigated single-crystal U3Ni3Sn4 by single-crystal X-ray diffraction, magnetization, electrical resistivity, and heat capacity measurements. The angular dependence of the dHvA frequencies reveals many closed Fermi surfaces, which are nearly spherical in topology. The experimental results are in good agreement with local density approximation (LDA) band structure calculations based on the 5f-itinerant model. The band structure calculation predicts many Fermi surfaces, mostly with spherical shape, derived from 12 bands crossing the Fermi energy. To our knowledge, the splitting of Fermi surfaces due to the non-centrosymmetric crystal in 5f-electron systems is experimentally detected for the first time. The temperature dependence of the dHvA amplitude reveals a large cyclotron effective mass of up to 35m0, indicating the heavy electronic state of U3Ni3Sn4 due to the proximity of the quantum critical point. From the field dependence of the dHvA amplitude, a mean free path of conduction electrons of up to 1950A is detected, reflecting the good quality of the grown crystal. The small splitting energy related to the antisymmetric spin-orbit interaction is most likely due to the large cyclotron effective mass.
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Submitted 28 February, 2018; v1 submitted 26 February, 2018;
originally announced February 2018.
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Superzone gap formation and low lying crystal electric field levels in PrPd$_2$Ge$_2$ single crystal
Authors:
Arvind Maurya,
S. K. Dhar,
A. Thamizhavel
Abstract:
The magnetocrystalline anisotropy exhibited in PrPd$_2$Ge$_2$ single crystal has been investigated by measuring the magnetization, magnetic susceptibility, electrical resistivity and heat capacity. PrPd$_2$Ge$_2$ crystallizes in the well known ThCr$_2$Si$_2$\--type tetragonal structure. The antiferromagnetic ordering is confirmed as 5.1~K with the [001]-axis as the easy axis of magnetization. A su…
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The magnetocrystalline anisotropy exhibited in PrPd$_2$Ge$_2$ single crystal has been investigated by measuring the magnetization, magnetic susceptibility, electrical resistivity and heat capacity. PrPd$_2$Ge$_2$ crystallizes in the well known ThCr$_2$Si$_2$\--type tetragonal structure. The antiferromagnetic ordering is confirmed as 5.1~K with the [001]-axis as the easy axis of magnetization. A superzone gap formation is observed from the electrical resistivity measurement when the current is passed along the [001] direction. The crystal electric field (CEF) analysis on the magnetic susceptibility, magnetization and the heat capacity measurements confirms a doublet ground state with a relatively low over all CEF level splitting. The CEF level spacings and the Zeeman splitting at high fields become comparable and lead to metamagnetic transition at 34~T due to the CEF level crossing.
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Submitted 1 February, 2017;
originally announced February 2017.
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Crystal structure and anisotropic magnetic properties of new ferromagnetic Kondo lattice compound Ce(Cu,Al,Si)2
Authors:
A. Maurya,
A. Thamizhavel,
S. K. Dhar,
A. Provino,
M. Pani,
G. A. Costa
Abstract:
Single crystals of the new compound CeCu0.18Al0.24Si1.58 have been grown by high-temperature solution growth method using a eutectic Al-Si mixture as flux. This compound is derived from the binary CeSi2 (tetragonal ThSi2-type, Pearson symbol tI12, space group I41/amd) obtained by partial substitution of Si by Cu and Al atoms but showing full occupation of the Si crystal site (8e). While CeSi2 is a…
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Single crystals of the new compound CeCu0.18Al0.24Si1.58 have been grown by high-temperature solution growth method using a eutectic Al-Si mixture as flux. This compound is derived from the binary CeSi2 (tetragonal ThSi2-type, Pearson symbol tI12, space group I41/amd) obtained by partial substitution of Si by Cu and Al atoms but showing full occupation of the Si crystal site (8e). While CeSi2 is a well-known valence-fluctuating paramagnetic compound, the CeCu0.18Al0.24Si1.58 phase orders ferromagnetically at TC = 9.3 K. At low temperatures the easy-axis of magnetization is along the a-axis, which re-orients itself along the c-axis above 30 K. The presence of hysteresis in the magnetization curve, negative temperature coefficient of resistivity at high temperatures, reduced jump in the heat capacity and a relatively lower entropy released up to the ordering temperature, and enhanced Sommerfeld coefficient (~100 mJ/mol K2) show that CeCu0.18Al0.24Si1.58 is a Kondo lattice ferromagnetic, moderate heavy fermion compound. Analysis of the high temperature heat capacity data in the paramagnetic region lets us infer that the crystal electric field split doublet levels are located at 178 and 357 K, respectively, and Kondo temperature (8.4 K) is of the order of TC in CeCu0.18Al0.24Si1.58.
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Submitted 11 September, 2016;
originally announced September 2016.
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Exploring metamagnetism of single crystalline \eun\ by neutron scattering
Authors:
X. Fabreges,
A. Gukasov,
P. Bonville,
A. Maurya,
A. Thamizhavel,
S. K. Dhar
Abstract:
We present here a neutron diffraction study, both in zero field and as a function of magnetic field, of the magnetic structure of the tetragonal intermetallic \eun\ on a single crystalline sample. This material is known to undergo a cascade of transitions, first at 13.2\,K towards an incommensurate modulated magnetic structure, then at 10.5\,K to an equal moment, yet undetermined, antiferromagneti…
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We present here a neutron diffraction study, both in zero field and as a function of magnetic field, of the magnetic structure of the tetragonal intermetallic \eun\ on a single crystalline sample. This material is known to undergo a cascade of transitions, first at 13.2\,K towards an incommensurate modulated magnetic structure, then at 10.5\,K to an equal moment, yet undetermined, antiferromagnetic structure. We show here that the low temperature phase presents a spiral moment arrangement with wave-vector {\bf k} = ($\frac{1}{4},δ,0)$. For a magnetic field applied along the tetragonal {\bf c}-axis, the square root of the scattering intensity of a chosen reflection matches very well the complex metamagnetic behavior of the magnetization along {\bf c} measured previously. For the magnetic field applied along the {\bf b}-axis, two magnetic transitions are observed below the transition to a fully polarized state.
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Submitted 11 May, 2016;
originally announced May 2016.
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Electronic nature of the lock-in magnetic transition in CeXAl4Si2
Authors:
J. Gunasekera,
L. Harriger,
A. Dahal,
A. Maurya,
T. Heitmann,
S. Disseler,
A. Thamizhavel,
S. Dhar,
D. K. Singh
Abstract:
We have investigated the underlying magnetism in newly discovered single crystal Kondo lattices CeXAl4Si2, where X = Rh, Ir. We show that the compound undergoes an incommensurate-to-commensurate magnetic transition at Tc = 9.19 K (10.75 K in Ir). The spin correlation in the incommensurate phase is described by a spin density wave configuration of Ce-ions, which locks-in to the long-range antiferro…
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We have investigated the underlying magnetism in newly discovered single crystal Kondo lattices CeXAl4Si2, where X = Rh, Ir. We show that the compound undergoes an incommensurate-to-commensurate magnetic transition at Tc = 9.19 K (10.75 K in Ir). The spin correlation in the incommensurate phase is described by a spin density wave configuration of Ce-ions, which locks-in to the long-range antiferromagnetic order at T = Tc. The qualitative analysis of the experimental data suggests the role of the Fermi surface nesting, instead of the lattice distortion causing the Umklapp correction or the soliton propagation, as the primary mechanism behind this phenomenon.
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Submitted 7 September, 2015;
originally announced September 2015.
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Anisotropic physical properties of PrRhAl$_4$Si$_2$ single crystal a non-magnetic singlet ground state compound
Authors:
Arvind Maurya,
Ruta Kulkarni,
A. Thamizhavel,
S. K. Dhar
Abstract:
We have grown the single crystal of PrRhAl$_4$Si$_2$, which crystallizes in the tetragonal crystal structure. From the low temperature physical property measurements like, magnetic susceptibility, magnetization, heat capacity and electrical resistivity, we found that this compound does not show any magnetic ordering down to 70~mK. Our crystal field calculations on the magnetic susceptibility and s…
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We have grown the single crystal of PrRhAl$_4$Si$_2$, which crystallizes in the tetragonal crystal structure. From the low temperature physical property measurements like, magnetic susceptibility, magnetization, heat capacity and electrical resistivity, we found that this compound does not show any magnetic ordering down to 70~mK. Our crystal field calculations on the magnetic susceptibility and specific heat measurements reveal that the 9-fold degenerate $(2J+1)$ levels of Pr atom in PrRhAl$_4$Si$_2$, splits into 7 levels, with a singlet ground state and a well separated excited doublet state at 123~K, with a overall level splitting energy of 320~K.
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Submitted 12 August, 2015;
originally announced August 2015.
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Magnetocaloric effect and magnetic phase diagram of EuRhAl4Si2
Authors:
Arvind Maurya,
A. Thamizhavel,
P. Bonville,
S. K. Dhar
Abstract:
EuRhAl4Si2, crystallizes in tetragonal crystal structure and orders antiferromagnetically at ~12 K. The isothermal magnetization along the two principle directions is highly anisotropic despite Eu2+ being an S-state ion. The variation of entropy change, which is a measure of MCE, with field and temperature, calculated from the isothermal magnetization data taken at various temperatures along the p…
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EuRhAl4Si2, crystallizes in tetragonal crystal structure and orders antiferromagnetically at ~12 K. The isothermal magnetization along the two principle directions is highly anisotropic despite Eu2+ being an S-state ion. The variation of entropy change, which is a measure of MCE, with field and temperature, calculated from the isothermal magnetization data taken at various temperatures along the principal crystallographic directions present interesting behavior in EuRhAl4Si2. In the magnetically ordered state the entropy change is non-monotonic below spin flip fields; however, in the paramagnetic region, it is negative irrespective of the strength of applied magnetic field. For H || [001] the maximum entropy change at 7 T is -21 J/Kg K around TN, which is large and comparable to the largest known values in this temperature range. The variation of the MCE with field strongly depends upon the direction of the applied magnetic field. Magnetic phase diagram of EuRhAl4Si2 derived from M(H) data is also constructed.
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Submitted 17 May, 2017; v1 submitted 21 July, 2015;
originally announced July 2015.
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Magnetic properties and complex magnetic phase diagram in non centrosymmetric EuRhGe$_3$ and EuIrGe$_3$ single crystals
Authors:
Arvind Maurya,
P. Bonville,
R. Kulkarni,
A. Thamizhavel,
S. K. Dhar
Abstract:
We report the magnetic properties of two Eu based compounds, single crystalline EuIrGe$_3$ and EuRhGe$_3$, inferred from magnetisation, electrical transport, heat capacity and $^{151}$Eu Mössbauer spectroscopy. These previously known compounds crystallise in the non-centrosymmetric, tetragonal, $I4mm$, BaNiSn$_3$-type structure. Single crystals of EuIrGe$_3$ and EuRhGe$_3$ were grown using high te…
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We report the magnetic properties of two Eu based compounds, single crystalline EuIrGe$_3$ and EuRhGe$_3$, inferred from magnetisation, electrical transport, heat capacity and $^{151}$Eu Mössbauer spectroscopy. These previously known compounds crystallise in the non-centrosymmetric, tetragonal, $I4mm$, BaNiSn$_3$-type structure. Single crystals of EuIrGe$_3$ and EuRhGe$_3$ were grown using high temperature solution growth method using In as flux. EuIrGe$_3$ exhibits two magnetic orderings at $T_{\rm N1}$ = 12.4 K, and $T_{\rm N2}$ = 7.3 K. On the other hand EuRhGe$_3$ presents a single magnetic transition with a $T_{\rm N}$ = 12 K. $^{151}$Eu Mössbauer spectra present evidence for a cascade of transitions from paramagnetic to incommensurate amplitude modulated followed by an equal moment antiferromagnetic phase at lower temperatures in EuIrGe$_3$, the transitions having a substantial first order character. On the other hand the $^{151}$Eu Mössbauer spectra at 4.2 and 9 K in EuRhGe$_3$ present evidence of a single magnetic transition. In both compounds a superzone gap is observed for the current density $J\parallel$ [001], which enhances with transverse magnetic field. The magnetisation measured up to 14 T shows the occurrence of field induced transitions, which are well documented in the magnetotransport data as well. The magnetic phase diagram constructed from these data is complex, revealing the presence of many phases in the $H-T$ phase space.
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Submitted 3 March, 2015;
originally announced March 2015.
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Enhanced conduction band density of states in intermetallic EuTSi$_3$ (T=Rh, Ir)
Authors:
A. Maurya,
P. Bonville,
A. Thamizhavel,
S. K. Dhar
Abstract:
We report on the physical properties of single crystalline EuRhSi$_3$ and polycrystalline EuIrSi$_3$, inferred from magnetisation, electrical transport, heat capacity and $^{151}$Eu Mössbauer spectroscopy. These previously known compounds crystallise in the tetragonal BaNiSn$_3$-type structure. The single crystal magnetisation in EuRhSi$_3$ has a strongly anisotropic behaviour at 2 K with a spin-f…
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We report on the physical properties of single crystalline EuRhSi$_3$ and polycrystalline EuIrSi$_3$, inferred from magnetisation, electrical transport, heat capacity and $^{151}$Eu Mössbauer spectroscopy. These previously known compounds crystallise in the tetragonal BaNiSn$_3$-type structure. The single crystal magnetisation in EuRhSi$_3$ has a strongly anisotropic behaviour at 2 K with a spin-flop field of 13 T, and we present a model of these magnetic properties which allows the exchange constants to be determined. In both compounds, specific heat shows the presence of a cascade of two close transitions near 50 K, and the $^{151}$Eu Mössbauer spectra demonstrate that the intermediate phase has an incommensurate amplitude modulated structure. We find anomalously large values, with respect to other members of the series, for the RKKY Néel temperature, for the spin-flop field (13 T), for the spin-wave gap ($\simeq$ 20-25 K) inferred from both resistivity and specific heat data, for the spin-disorder resistivity in EuRhSi$_3$ ($\simeq 35$ $μ$Ohm.cm) and for the saturated hyperfine field (52 T). We show that all these quantities depend on the electronic density of states at the Fermi level, implying that the latter must be strongly enhanced in these two materials. EuIrSi$_3$ exhibits a giant magnetoresistance ratio, with values exceeding 600 % at 2 K in a field of 14 T.
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Submitted 1 February, 2015;
originally announced February 2015.
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Kondo lattice and antiferromagnetic behavior in quaternary CeTAl$_4$Si$_2$ (T~=~Rh, Ir) single crystals
Authors:
Arvind Maurya,
R. Kulkarni,
A. Thamizhavel,
D. Paudyal,
S. K. Dhar
Abstract:
We report the synthesis and the magnetic properties of single crystalline CeRhAl$_4$Si$_2$ and CeIrAl$_4$Si$_2$ and their non magnetic La-analogs. The single crystals of these quaternary compounds were grown using Al-Si binary eutectic as flux. The anisotropic magnetic properties of the cerium compounds were explored in detail by means of magnetic susceptibility, isothermal magnetization, electric…
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We report the synthesis and the magnetic properties of single crystalline CeRhAl$_4$Si$_2$ and CeIrAl$_4$Si$_2$ and their non magnetic La-analogs. The single crystals of these quaternary compounds were grown using Al-Si binary eutectic as flux. The anisotropic magnetic properties of the cerium compounds were explored in detail by means of magnetic susceptibility, isothermal magnetization, electrical resistivity, magnetoresistivity and heat capacity measurements. Both CeRhAl$_4$Si$_2$ and CeIrAl$_4$Si$_2$ undergo two antiferromagnetic transitions, first from the paramagnetic to an antiferromagnetic state at $T_{\rm N1}$~=~12.6~K and 15.5~K, followed by a second transition at lower temperatures $T_{\rm N2}$~=~9.4~K and 13.8~K, respectively. The paramagnetic susceptibility is highly anisotropic and its temperature dependence in the magnetically ordered state suggests the $c$-axis to be the relatively easy axis of magnetization. Concomitantly, isothermal magnetization at 2~K along the $c$-axis shows a sharp spin-flop transition accompanied by a sizeable hysteresis, while it varies nearly linearly with field along the [100] direction up to the highest field 14~T, of our measurement. The electrical resistivity provides evidence of the Kondo interaction in both compounds, inferred from its $-lnT$ behavior in the paramagnetic region. The heat capacity data confirm the bulk nature of the two magnetic transitions in each compound, and further confirm the presence of Kondo interaction by a reduced value of the entropy associated with the magnetic ordering. From the heat capacity data below 1~K, the coefficient of the linear term in the electronic heat capacity, $γ$, is inferred to be 195.6 and 49.4~mJ/mol K$^2$ in CeRhAl$_4$Si$_2$ and CeIrAl$_4$Si$_2$, respectively classifying these materials as moderate heavy fermion compounds.
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Submitted 10 May, 2015; v1 submitted 1 January, 2015;
originally announced January 2015.
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Anisotropic putative "up-up-down" magnetic structure in EuTAl$_4$Si$_2$ (T = Rh and Ir)
Authors:
Arvind Maurya,
P. Bonville,
A. Thamizhavel,
S. K. Dhar
Abstract:
We present detailed investigations in single crystals of two recently reported quaternary intermetallic compounds EuRhAl$_4$Si$_2$ and EuIrAl$_4$Si$_2$ employing magnetization, electrical resistivity in zero and applied fields, heat capacity and $^{151}$Eu Mössbauer spectroscopy measurements. The two compounds order antiferromagnetically at $T_{\rm N1}$ = 11.7 and 14.7\,K, respectively, each under…
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We present detailed investigations in single crystals of two recently reported quaternary intermetallic compounds EuRhAl$_4$Si$_2$ and EuIrAl$_4$Si$_2$ employing magnetization, electrical resistivity in zero and applied fields, heat capacity and $^{151}$Eu Mössbauer spectroscopy measurements. The two compounds order antiferromagnetically at $T_{\rm N1}$ = 11.7 and 14.7\,K, respectively, each undergoing two magnetic transitions: the first from paramagnetic to incommensurate modulated antiferromagnetic, the second at lower temperature to a commensurate antiferromagnetic phase as confirmed by heat capacity and Mössbauer spectra. The magnetic properties in the ordered state present a large anisotropy despite Eu$^{2+}$ being an $S$-state ion for which the single-ion anisotropy is expected to be weak. Two features in the magnetization measured along the $c$-axis are prominent. At 1.8\,K, a ferromagnetic-like jump occurs at very low field to a value one third of the saturation magnetization (1/3 M$_0$) followed by a wide plateau up to 2\,T for T = Rh and 4\,T for T = Ir. At this field value, a sharp hysteretic spin-flop transition occurs to a fully saturated state (M$_0$). Surprisingly, the magnetization does not return to origin when the field is reduced to zero in the return cycle, as expected in an antiferromagnet. Instead, a remnant magnetization 1/3 M$_0$ is observed and the magnetic loop around the origin shows hysteresis. This suggests that the zero field magnetic structure has a ferromagnetic component, and we present a model with up to third neighbor exchange and dipolar interaction which reproduces the magnetization curves and hints to an "up-up-down" magnetic structure in zero field.
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Submitted 3 November, 2014;
originally announced November 2014.
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EuNiGe3, an equal moment anisotropic antiferromagnet
Authors:
Arvind Maurya,
P. Bonville,
A. Thamizhavel,
S. K. Dhar
Abstract:
Single crystals of EuNiGe$_3$ crystallizing in the non-centrosymmetric BaNiSn$_3$-type structure have been grown using In flux, enabling us to explore the anisotropic magnetic properties which was not possible with previously reported polycrystalline samples. The EuNiGe$_3$ single crystalline sample is found to order antiferromagnetically at 13.2 K as revealed from the magnetic susceptibility, hea…
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Single crystals of EuNiGe$_3$ crystallizing in the non-centrosymmetric BaNiSn$_3$-type structure have been grown using In flux, enabling us to explore the anisotropic magnetic properties which was not possible with previously reported polycrystalline samples. The EuNiGe$_3$ single crystalline sample is found to order antiferromagnetically at 13.2 K as revealed from the magnetic susceptibility, heat capacity and electrical resistivity data. The low temperature magnetization M(H) is distinctly different for field parallel to ${ab}$-plane and $c$-axis; the ${ab}$-plane magnetization varies nearly linearly with field before the occurrence of an induced ferromagnetic phase (spin-flip) at 6.2 Tesla; on the other hand M(H) along the $c$-axis is accompanied by two metamagnetic transitions followed by a spin-flip at 4.1 T. A model including anisotropic exchange and dipole-dipole interactions reproduces the main features of magnetization plots but falls short of full representation. (H,T) phase diagrams have been constructed for the field applied along the principal directions. From the $^{151}$Eu Mössbauer spectra, we determine that the 13.2 K transition leads to an incommensurate antiferromagnetic intermediate phase followed by a transition near 10.5 K to a commensurate antiferromagnetic configuration.
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Submitted 1 February, 2014;
originally announced February 2014.
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Anisotropic magnetic properties and crystal electric field studies on CePd$_2$Ge$_2$ single crystal
Authors:
Arvind Maurya,
R. Kulkarni,
S. K. Dhar,
A. Thamizhavel
Abstract:
The anisotropic magnetic properties of the antiferromagnetic compound CePd$_2$Ge$_2$, crystallizing in the tetragonal crystal structure have been investigated in detail on a single crystal grown by Czochralski method. From the electrical transport, magnetization and heat capacity data, the Néel temperature is confirmed to be 5.1 K. Anisotropic behaviour of magnetization and resistivity is observed…
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The anisotropic magnetic properties of the antiferromagnetic compound CePd$_2$Ge$_2$, crystallizing in the tetragonal crystal structure have been investigated in detail on a single crystal grown by Czochralski method. From the electrical transport, magnetization and heat capacity data, the Néel temperature is confirmed to be 5.1 K. Anisotropic behaviour of magnetization and resistivity is observed along the two principal crystallographic directions viz., [100] and [001]. The isothermal magnetization measured in the magnetically ordered state at 2 K exhibits a spin re-orientation at 13.5 T for field applied along [100] direction, whereas the magnetization was linear along the [001] direction attaining a value of 0.94 $μ_{\rm B}$/Ce at 14 T. The reduced value of the magnetization is attributed to the crystalline electric field (CEF) effects. A sharp jump in the specific heat at the magnetic ordering temperature is observed. After subtracting the phononic contribution, the jump in the heat capacity amounts to 12.5 J/K mol which is the expected value for a spin ${1}{2}$ system. From the CEF analysis of the magnetization data the excited crystal field split energy levels were estimated to be at 120 K and 230 K respectively, which quantitatively explain the observed Schottky anomaly in the heat capacity. A magnetic phase diagram has been constructed based on the field dependence of magnetic susceptibility and the heat capacity data.
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Submitted 22 July, 2013;
originally announced July 2013.
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Facile fabrication of lateral nanowire wrap-gate devices with improved performance
Authors:
Sajal Dhara,
Shamashis Sengupta,
Hari S. Solanki,
Arvind Maurya,
Arvind Pavan R.,
M. R. Gokhale,
Arnab Bhattacharya,
Mandar M. Deshmukh
Abstract:
We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than…
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We present a simple fabrication technique for lateral nanowire wrap-gate devices with high capacitive coupling and field-effect mobility. Our process uses e-beam lithography with a single resist-spinning step, and does not require chemical etching. We measure, in the temperature range 1.5-250 K, a subthreshold slope of 5-54 mV/decade and mobility of 2800-2500 $cm^2/Vs$ -- significantly larger than previously reported lateral wrap-gate devices. At depletion, the barrier height due to the gated region is proportional to applied wrap-gate voltage.
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Submitted 4 June, 2011;
originally announced June 2011.
