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Balanced Quantum Hall Resistor
Authors:
Kajetan M. Fijalkowski,
Nan Liu,
Martin Klement,
Steffen Schreyeck,
Karl Brunner,
Charles Gould,
Laurens W. Molenkamp
Abstract:
The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic field, which allows to combine it with the quantum standard of voltage. Here we demonstrate a measurement scheme that increases the robustness of the z…
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The quantum anomalous Hall effect in magnetic topological insulators has been recognized as a promising platform for applications in quantum metrology. The primary reason for this is the electronic conductance quantization at zero external magnetic field, which allows to combine it with the quantum standard of voltage. Here we demonstrate a measurement scheme that increases the robustness of the zero magnetic field quantum anomalous Hall resistor, allowing for higher operational currents. This is achieved by simultaneous current injection into the two disconnected perimeters of a multi-terminal Corbino device to balance the electrochemical potential between the edges, screening the electric field that drives back-scattering through the bulk, and thus improving the stability of the quantization at increased currents. This approach is not only applicable to devices based on the quantum anomalous Hall effect, but more generally can also be applied to existing quantum resistance standards that rely on the integer quantum Hall effect.
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Submitted 6 February, 2024;
originally announced February 2024.
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Milliwatt terahertz harmonic generation from topological insulator metamaterials
Authors:
Klaas-Jan Tielrooij,
Alessandro Principi,
David Saleta Reig,
Alexander Block,
Sebin Varghese,
Steffen Schreyeck,
Karl Brunner,
Grzegorz Karczewski,
Igor Ilyakov,
Oleksiy Ponomaryov,
Thales V. A. G. de Oliveira,
Min Chen,
Jan-Christoph Deinert,
Carmen Gomez Carbonell,
Sergio O. Valenzuela,
Laurens W. Molenkamp,
Tobias Kiessling,
Georgy V. Astakhov,
Sergey Kovalev
Abstract:
Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at…
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Achieving efficient, high-power harmonic generation in the terahertz spectral domain has technological applications, for example in sixth generation (6G) communication networks. Massless Dirac fermions possess extremely large terahertz nonlinear susceptibilities and harmonic conversion efficiencies. However, the observed maximum generated harmonic power is limited, because of saturation effects at increasing incident powers, as shown recently for graphene. Here, we demonstrate room-temperature terahertz harmonic generation in a Bi$_2$Se$_3$ topological insulator and topological-insulator-grating metamaterial structures with surface-selective terahertz field enhancement. We obtain a third-harmonic power approaching the milliwatt range for an incident power of 75 mW - an improvement by two orders of magnitude compared to a benchmarked graphene sample. We establish a framework in which this exceptional performance is the result of thermodynamic harmonic generation by the massless topological surface states, benefiting from ultrafast dissipation of electronic heat via surface-bulk Coulomb interactions. These results are an important step towards on-chip terahertz (opto)electronic applications.
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Submitted 1 November, 2022;
originally announced November 2022.
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Quantum transport and mobility spectrum of topological carriers in (001) SnTe/PbTe heterojunctions
Authors:
D. Śnieżek,
Jarosław Wróbel,
M. Kojdecki,
C. Śliwa,
S. Schreyeck,
K. Brunner,
L. W. Molenkamp,
G. Karczewski,
Jerzy Wróbel
Abstract:
Measurements of magnetotransport in SnTe/PbTe heterojunctions grown by the MBE technique on (001) undoped CdTe substrates were performed. At low magnetic fields, quantum corrections to conductivity were observed that may be attributed to the presence of topological states at the junction interface. For a sample with 5 nm thick SnTe layer, the data analysis suggests that midgap states are actually…
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Measurements of magnetotransport in SnTe/PbTe heterojunctions grown by the MBE technique on (001) undoped CdTe substrates were performed. At low magnetic fields, quantum corrections to conductivity were observed that may be attributed to the presence of topological states at the junction interface. For a sample with 5 nm thick SnTe layer, the data analysis suggests that midgap states are actually gapped. However, the phase coherence effects in 10 nm and 20 nm SnTe/PbTe samples are fully explained assuming existence of gapless Dirac cones. Magnetotransport at higher magnetic fields is described in the framework of mobility spectrum analysis (MSA). We demonstrate that the electron- and hole-like peaks observed simultaneously for all SnTe/PbTe heterojunctions may originate from the concave and convex parts of the energy isosurface for topological states -- and not from the existence of quasiparticles both carrying negative and positive charges. This interpretation is supported by numerical calculations of conductivity tensor components for gapless (100) Dirac cones, performed within a classical model and based on the solutions of Boltzmann transport equation. Our approach shows the feasibility of MSA in application to magnetotransport measurements on topological matter.
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Submitted 20 January, 2023; v1 submitted 10 August, 2022;
originally announced August 2022.
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Macroscopic Quantum Tunneling of a Topological Ferromagnet
Authors:
Kajetan M. Fijalkowski,
Nan Liu,
Pankaj Mandal,
Steffen Schreyeck,
Karl Brunner,
Charles Gould,
Laurens W. Molenkamp
Abstract:
The recent advent of topological states of matter spawned many significant discoveries. The quantum anomalous Hall effect[1-3] is a prime example due to its potential for applications in quantum metrology[4, 5] as well as its influence on fundamental research into the underlying topological and magnetic states[6-11] and axion electrodynamics[2, 12-14]. Here, we perform electronic transport studies…
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The recent advent of topological states of matter spawned many significant discoveries. The quantum anomalous Hall effect[1-3] is a prime example due to its potential for applications in quantum metrology[4, 5] as well as its influence on fundamental research into the underlying topological and magnetic states[6-11] and axion electrodynamics[2, 12-14]. Here, we perform electronic transport studies on a (V,Bi,Sb)2Te3 ferromagnetic topological insulator nanostructure in the quantum anomalous Hall regime. This allows us access to the dynamics of an individual ferromagnetic domain. The volume of the domain is estimated to be about 85 000 nm3, containing some 50 000 vanadium atoms, spread over a macroscopic distance of 115 nm. Telegraph noise resulting from the magnetization fluctuations of this domain is observed in the Hall signal. Careful analysis of the influence of temperature and external magnetic field on the domain switching statistics provides evidence for quantum tunneling of magnetization[15-22] in a macrospin state. This ferromagnetic macrospin is not only the largest magnetic object in which quantum tunneling has been observed, but also the first observation of the effect in a topological state of matter.
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Submitted 8 June, 2022;
originally announced June 2022.
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Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy
Authors:
N. Liu,
S. Schreyeck,
K. M. Fijalkowski,
M. Kamp,
K. Brunner,
C. Gould,
L. W. Molenkamp
Abstract:
MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about…
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MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(111) by MBE with elemental sources. Films of about 100 nm thickness are analyzed in stoichiometric, structural, magnetic and magnetotransport properties with high accuracy. High-quality MnBi2Te4 films with nearly perfect septuple-layer structure are realized and structural defects typical for epitaxial van-der-Waals layers are analyzed. The films reveal antiferromagnetic order with a Neel temperature of 19 K, a spin-flop transition at a magnetic field of 2.5 T and a resistivity of 1.6 mOhm cm. These values are comparable to that of bulk MnBi2Te4 crystals. Our results provide an important basis for realizing and identifying single-phase MnBi2Te4 films with antiferromagnetic order grown by MBE.
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Submitted 27 November, 2021;
originally announced November 2021.
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Quantum anomalous Hall edge channels survive up to the Curie temperature
Authors:
Kajetan M. Fijalkowski,
Nan Liu,
Pankaj Mandal,
Steffen Schreyeck,
Karl Brunner,
Charles Gould,
Laurens W. Molenkamp
Abstract:
Achieving metrological precision of quantum anomalous Hall resistance quantization at zero magnetic field so far remains limited to temperatures of the order of 20 mK, while the Curie temperature in the involved material is as high as 20 K. The reason for this discrepancy remains one of the biggest open questions surrounding the effect, and is the focus of this article. Here we show, through a car…
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Achieving metrological precision of quantum anomalous Hall resistance quantization at zero magnetic field so far remains limited to temperatures of the order of 20 mK, while the Curie temperature in the involved material is as high as 20 K. The reason for this discrepancy remains one of the biggest open questions surrounding the effect, and is the focus of this article. Here we show, through a careful analysis of the non-local voltages on a multi-terminal Corbino geometry, that the chiral edge channels continue to exist without applied magnetic field up to the Curie temperature of bulk ferromagnetism of the magnetic topological insulator, and that thermally activated bulk conductance is responsible for this quantization breakdown. Our results offer important insights on the nature of the topological protection of these edge channels, provide an encouraging sign for potential applications, and establish the multi-terminal Corbino geometry as a powerful tool for the study of edge channel transport in topological materials.
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Submitted 3 September, 2021;
originally announced September 2021.
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Any Axion Insulator Must be a Bulk Three-Dimensional Topological Insulator
Authors:
K. M. Fijalkowski,
N. Liu,
M. Hartl,
M. Winnerlein,
P. Mandal,
A. Coschizza,
A. Fothergill,
S. Grauer,
S. Schreyeck,
K. Brunner,
M. Greiter,
R. Thomale,
C. Gould,
L. W. Molenkamp
Abstract:
In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated as direct evidence of an axion insulator state. We investigate the general notion of axion insulators, which by definition must contain a nontrivial…
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In recent attempts to observe axion electrodynamics, much effort has focused on trilayer heterostructures of magnetic topological insulators, and in particular on the examination of a so-called zero Hall plateau, which has misguidedly been overstated as direct evidence of an axion insulator state. We investigate the general notion of axion insulators, which by definition must contain a nontrivial volume to host the axion term. We conduct a detailed magneto-transport analysis of Chern insulators comprised of a single magnetic topological insulator layer of varying thickness as well as trilayer structures, for samples optimized to yield a perfectly quantized anomalous Hall effect. Our analysis gives evidence for a topological magneto-electric effect quantized in units of e$^2$/2h, allowing us to identify signatures of axion electrodynamics. Our observations may provide direct experimental access to electrodynamic properties of the universe beyond the traditional Maxwell equations, and challenge the hitherto proclaimed exclusive link between the observation of a zero Hall plateau and an axion insulator.
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Submitted 20 May, 2021;
originally announced May 2021.
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Femtosecond Transfer and Manipulation of Persistent Hot-Trion Coherence in a Single CdSe/ZnSe Quantum Dot
Authors:
Philipp Henzler,
Christian Traum,
Matthias Holtkemper,
David Nabben,
Marcel Erbe,
Doris E. Reiter,
Tilmann Kuhn,
Suddhassatta Mahapatra,
Karl Brunner,
Denis V. Seletskiy,
Alfred Leitenstorfer
Abstract:
Ultrafast transmission changes around the fundamental trion resonance are studied after exciting a p-shell exciton in a negatively charged II-VI quantum dot. The biexcitonic induced absorption reveals quantum beats between hot trion states at 133 GHz. While interband dephasing is dominated by relaxation of the P-shell hole within 390 fs, trionic coherence remains stored in the spin system for 85 p…
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Ultrafast transmission changes around the fundamental trion resonance are studied after exciting a p-shell exciton in a negatively charged II-VI quantum dot. The biexcitonic induced absorption reveals quantum beats between hot trion states at 133 GHz. While interband dephasing is dominated by relaxation of the P-shell hole within 390 fs, trionic coherence remains stored in the spin system for 85 ps due to Pauli blocking of the triplet electron. The complex spectro-temporal evolution of transmission is explained analytically by solving the Maxwell-Liouville equations. Pump and probe polarizations provide full control over amplitude and phase of the quantum beats.
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Submitted 13 January, 2021; v1 submitted 20 November, 2020;
originally announced November 2020.
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Ubiquitous impact of localised impurity states on the exchange coupling mechanism in magnetic topological insulators
Authors:
Thiago R. F. Peixoto,
Hendrik Bentmann,
Philipp Rüßmann,
Abdul-Vakhab Tcakaev,
Martin Winnerlein,
Steffen Schreyeck,
Sonja Schatz,
Raphael Crespo Vidal,
Fabian Stier,
Volodymyr Zabolotnyy,
Robert J. Green,
Chul Hee Min,
Celso I. Fornari,
Henriette Maaß,
Hari Babu Vasili,
Pierluigi Gargiani,
Manuel Valvidares,
Alessandro Barla,
Jens Buck,
Moritz Hoesch,
Florian Diekmann,
Sebastian Rohlf,
Matthias Kalläne,
Kai Rossnagel,
Charles Gould
, et al. (5 additional authors not shown)
Abstract:
Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and mul…
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Since the discovery of the quantum anomalous Hall effect in the magnetically doped topological insulators (MTI) Cr:(Bi,Sb)$_2$Te$_3$ and V:(Bi,Sb)$_2$Te$_3$, the search for the exchange coupling mechanisms underlying the onset of ferromagnetism has been a central issue, and a variety of different scenarios have been put forward. By combining resonant photoemission, X-ray magnetic dichroism and multiplet ligand field theory, we determine the local electronic and magnetic configurations of V and Cr impurities in (Bi,Sb)$_2$Te$_3$. While strong pd hybridisation is found for both dopant types, their 3d densities of states show pronounced differences. State-of-the-art first-principles calculations show how these impurity states mediate characteristic short-range pd exchange interactions, whose strength sensitively varies with the position of the 3d states relative to the Fermi level. Measurements on films with varying host stoichiometry support this trend. Our results establish the essential role of impurity-state mediated exchange interactions in the magnetism of MTI.
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Submitted 15 January, 2020;
originally announced January 2020.
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Coexistence of surface and bulk ferromagnetism mimics skyrmion Hall effect in a topological insulator
Authors:
Kajetan M. Fijalkowski,
Matthias Hartl,
Martin Winnerlein,
Pankaj Mandal,
Steffen Schreyeck,
Karl Brunner,
Charles Gould,
Laurens W. Molenkamp
Abstract:
Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different…
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Here we report the investigation of the anomalous Hall effect in the magnetically doped topological insulator (V,Bi,Sb)2Te3. We find it contains two contributions of opposite sign. Both components are found to depend differently on carrier density, leading to a sign inversion of the total anomalous Hall effect as a function of applied gate voltage. The two contributions are found to have different magnetization reversal fields, which in combination with a temperature dependent study points towards the coexistence of two ferromagnetic orders in the system. Moreover, we find that the sign of total anomalous Hall response of the system depends on the thickness and magnetic doping density of the magnetic layer. The thickness dependence suggests that the two ferromagnetic components originate from the surface and bulk of the magnetic topological insulator film. We believe that our observations provide insight on the magnetic behavior, and thus will contribute to an eventual understanding of the origin of magnetism in this material class. In addition, our data bears a striking resemblance to anomalous Hall signals often associated with skyrmion contributions. Our analysis provides a straightforward explanation for both the magnetic field dependence of the Hall signal and the observed change in sign without needing to invoke skyrmions, and thus suggest that caution is needed when making claims of effects from skyrmion phases.
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Submitted 5 December, 2019;
originally announced December 2019.
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Breaking crystalline symmetry of epitaxial SnTe films by strain
Authors:
Steffen Schreyeck,
Karl Brunner,
Laurens W. Molenkamp,
Grzegorz Karczewski,
Martin Schmitt,
Paolo Sessi,
Matthias Vogt,
Stefan Wilfert,
Artem B. Odobesko,
Matthias Bode
Abstract:
SnTe belongs to the recently discovered class of topological crystalline insulators. Here we study the formation of line defects which break crystalline symmetry by strain in thin SnTe films. Strained SnTe(111) films are grown by molecular beam epitaxy on lattice- and thermal expansion coefficient-mismatched CdTe. To analyze the structural properties of the SnTe films we applied {\em in-situ} refl…
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SnTe belongs to the recently discovered class of topological crystalline insulators. Here we study the formation of line defects which break crystalline symmetry by strain in thin SnTe films. Strained SnTe(111) films are grown by molecular beam epitaxy on lattice- and thermal expansion coefficient-mismatched CdTe. To analyze the structural properties of the SnTe films we applied {\em in-situ} reflection high energy electron diffraction, x-ray reflectometry, high resolution x-ray diffraction, reciprocal space mapping, and scanning tunneling microscopy. This comprehensive analytical approach reveals a twinned structure, tensile strain, bilayer surface steps and dislocation line defects forming a highly ordered dislocation network for thick films with local strains up to 31\% breaking the translational crystal symmetry.
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Submitted 30 November, 2018;
originally announced November 2018.
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Zero-field quantum anomalous Hall metrology as a step towards a universal quantum standard unit system
Authors:
Martin Goetz,
Kajetan M. Fijalkowski,
Eckart Pesel,
Matthias Hartl,
Steffen Schreyeck,
Martin Winnerlein,
Stefan Grauer,
Hansjoerg Scherer,
Karl Brunner,
Charles Gould,
Franz J. Ahlers,
Laurens W. Molenkamp
Abstract:
In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed with standard transport measurement techniques which are difficult to trace to the von-Klitzing constant R$_K$ with high precision. Here, we pre…
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In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed with standard transport measurement techniques which are difficult to trace to the von-Klitzing constant R$_K$ with high precision. Here, we present a metrologically comprehensive measurement, including a full uncertainty budget, of the resistance quantization of V-doped (Bi,Sb)$_2$Te$_3$ devices without external magnetic field. We established as a new upper limit for a potential deviation of the quantized anomalous Hall resistance from RK a value of 0.26 +- 0.22 ppm, the smallest and most precise value reported to date. This provides another major step towards realization of the zero-field quantum resistance standard which in combination with Josephson effect will provide the universal quantum units standard in the future.
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Submitted 11 October, 2017;
originally announced October 2017.
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Scaling of the Quantum Anomalous Hall Effect as an Indicator of Axion Electrodynamics
Authors:
S. Grauer,
K. M. Fijalkowski,
S. Schreyeck,
M. Winnerlein,
K. Brunner,
R. Thomale,
C. Gould,
L. W. Molenkamp
Abstract:
We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a two-dimensional integer quantum Hall state, we observe a dimensional crossover to three spatial dimensions as a function of layer thickness. In the limit of a suffi…
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We report on the scaling behavior of V-doped (Bi,Sb)$_2$Te$_3$ samples in the quantum anomalous Hall regime for samples of various thickness. While previous quantum anomalous Hall measurements showed the same scaling as expected from a two-dimensional integer quantum Hall state, we observe a dimensional crossover to three spatial dimensions as a function of layer thickness. In the limit of a sufficiently thick layer, we find scaling behavior matching the flow diagram of two parallel conducting topological surface states of a three-dimensional topological insulator each featuring a fractional shift of $\frac{1}{2} e^2/h$ in the flow diagram Hall conductivity, while we recover the expected integer quantum Hall behavior for thinner layers. This constitutes the observation of a distinct type of quantum anomalous Hall effect, resulting from $\frac{1}{2} e^2/h$ Hall conductance quantization of three-dimensional topological insulator surface states, in an experiment which does not require decomposition of signal to separate the contribution of two surfaces. This provides a possible experimental link between quantum Hall physics and axion electrodynamics.
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Submitted 14 June, 2017;
originally announced June 2017.
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Epitaxy and Structural Properties of (V,Bi,Sb)$_2$Te$_3$ Layers Exhibiting the Quantum Anomalous Hall Effect
Authors:
M. Winnerlein,
S. Schreyeck,
S. Grauer,
S. Rosenberger,
K. M. Fijalkowski,
C. Gould,
K. Brunner,
L. W. Molenkamp
Abstract:
The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are reproducibly deposited by molecular beam epitaxy at growth conditions effecting a compromise between controlled layer properties and high crystalline quality. The Sb cont…
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The influence of Sb content, substrate type and cap layers on the quantum anomalous Hall effect observed in V-doped (Bi,Sb)$_2$Te$_3$ magnetic topological insulators is investigated. Thin layers showing excellent quantization are reproducibly deposited by molecular beam epitaxy at growth conditions effecting a compromise between controlled layer properties and high crystalline quality. The Sb content can be reliably determined from the in-plane lattice constant measured by X-ray diffraction, even in thin layers. This is the main layer parameter to be optimized in order to approach charge neutrality. Within a narrow range at about 80% Sb content, the Hall resistivity shows a maximum of about 10 k$Ω$ at 4 K and quantizes at mK temperatures. Under these conditions, thin layers grown on Si(111) or InP(111) and with or without a Te cap exhibit quantization. The quantization persists independently of the interfaces between cap, layer and substrate, the limited crystalline quality, and the degradation of the layer proving the robustness of the quantum anomalous Hall effect.
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Submitted 4 July, 2017; v1 submitted 19 April, 2017;
originally announced April 2017.
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Impurity states in the magnetic topological insulator V:(Bi,Sb)$_2$Te$_3$
Authors:
Thiago R. F. Peixoto,
Hendrik Bentmann,
Steffen Schreyeck,
Martin Winnerlein,
Christoph Seibel,
Henriette Maaß,
Mohammed Al-Baidhani,
Katharina Treiber,
Sonja Schatz,
Stefan Grauer,
Charles Gould,
Karl Brunner,
Arthur Ernst,
Laurens W. Molenkamp,
Friedrich Reinert
Abstract:
The ferromagnetic topological insulator V:(Bi,Sb)$_2$Te$_3$ has been recently reported as a quantum anomalous Hall (QAH) system. Yet the microscopic origins of the QAH effect and the ferromagnetism remain unclear. One key aspect is the contribution of the V atoms to the electronic structure. Here the valence band of V:(Bi,Sb)$_2$Te$_3$ thin films was probed in an element-specific way by resonant p…
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The ferromagnetic topological insulator V:(Bi,Sb)$_2$Te$_3$ has been recently reported as a quantum anomalous Hall (QAH) system. Yet the microscopic origins of the QAH effect and the ferromagnetism remain unclear. One key aspect is the contribution of the V atoms to the electronic structure. Here the valence band of V:(Bi,Sb)$_2$Te$_3$ thin films was probed in an element-specific way by resonant photoemission spectroscopy. The signature of the V $3d$ impurity band was extracted, and exhibits a high density of states near Fermi level. First-principles calculations support the experimental results and indicate the coexistence of ferromagnetic superexchange and double exchange interactions. The observed impurity band is thus expected to contribute to the ferromagnetism via the interplay of different mechanisms.
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Submitted 5 October, 2016; v1 submitted 6 July, 2016;
originally announced July 2016.
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Kinetic limitation of chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ layers grown by molecular beam epitaxy
Authors:
S. Schreyeck,
K. Brunner,
A. Kirchner,
U. Bass,
S. Grauer,
C. Schumacher,
C. Gould,
G. Karczewski,
J. Geurts,
L. W. Molenkamp
Abstract:
We study the chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive X-ray spectroscopy, X-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent descriptio…
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We study the chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive X-ray spectroscopy, X-ray diffraction and Raman spectroscopy. By fitting the parameters of a kinetic growth model to these results, we obtain a consistent description of growth at a microscopic level. Our main finding is that despite the incorporation of Se in the central layer being much more probable than that of Te, the formation of a fully ordered Te-Bi-Se-Bi-Te layer is prevented by kinetic of the growth process. Indeed, the Se concentration in the central layer of Bi$_2$Te$_2$Se$_1$ reaches a maximum of only $\approx$ 75% even under ideal growth conditions. A second finding of our work is that the intensity ratio of the 0 0 12 and 0 0 6 X-ray reflections serves as an experimentally accessible quantitative measure of the degree of ordering in these films.
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Submitted 29 February, 2016;
originally announced February 2016.
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Genetically designed biomolecular capping system for mesoporous silica nanoparticles enables receptor-mediated cell uptake and controlled drug release
Authors:
Stefan Datz,
Christian Argyo,
Michael Gattner,
Veronika Weiss,
Korbinian Brunner,
Johanna Bretzler,
Constantin von Schirnding,
Fabio Spada,
Hanna Engelke,
Milan Vrabel,
Christoph Bräuchle,
Thomas Carell,
Thomas Bein
Abstract:
Effective and controlled drug delivery systems with on-demand release and targeting abilities have received enormous attention for biomedical applications. Here, we describe a novel enzyme-based cap system for mesoporous silica nanoparticles (MSNs) that is directly combined with a targeting ligand via bio-orthogonal click chemistry. The capping system is based on the pH-responsive binding of an ar…
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Effective and controlled drug delivery systems with on-demand release and targeting abilities have received enormous attention for biomedical applications. Here, we describe a novel enzyme-based cap system for mesoporous silica nanoparticles (MSNs) that is directly combined with a targeting ligand via bio-orthogonal click chemistry. The capping system is based on the pH-responsive binding of an aryl-sulfonamide-functionalized MSN and the enzyme carbonic anhydrase (CA). An unnatural amino acid (UAA) containing a norbornene moiety was genetically incorporated into CA. This UAA allowed for the site-specific bio-orthogonal attachment of even very sensitive targeting ligands such as folic acid and anandamide. This leads to specific receptor-mediated cell and stem cell uptake. We demonstrate the successful delivery and release of the chemotherapeutic agent Actinomycin D to KB cells. This novel nanocarrier concept provides a promising platform for the development of precisely controllable and highly modular theranostic systems.
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Submitted 13 October, 2015;
originally announced October 2015.
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Coincidence of Superparamagnetism and perfect quantization in the Quantum Anomalous Hall state
Authors:
S. Grauer,
S. Schreyeck,
M. Winnerlein,
K. Brunner,
C. Gould,
L. W. Molenkamp
Abstract:
Topological insulators doped with transition metals have recently been found to host a strong ferromagnetic state with perpendicular to plane anisotropy as well as support a quantum Hall state with edge channel transport, even in the absence of an external magnetic field. It remains unclear however why a robust magnetic state should emerge in materials of relatively low crystalline quality and dil…
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Topological insulators doped with transition metals have recently been found to host a strong ferromagnetic state with perpendicular to plane anisotropy as well as support a quantum Hall state with edge channel transport, even in the absence of an external magnetic field. It remains unclear however why a robust magnetic state should emerge in materials of relatively low crystalline quality and dilute magnetic doping. Indeed, recent experiments suggest that the ferromagnetism exhibits at least some superparamagnetic character. We report on transport measurements in a sample that shows perfect quantum anomalous Hall quantization, while at the same time exhibits traits in its transport data which suggest inhomogeneities. We speculate that this may be evidence that the percolation path interpretation used to explain the transport during the magnetic reversal may actually have relevance over the entire field range.
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Submitted 1 September, 2015; v1 submitted 17 July, 2015;
originally announced July 2015.
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Magneto-optics of massive Dirac fermions in bulk Bi2Se3
Authors:
M. Orlita,
B. A. Piot,
G. Martinez,
N. K. Sampath Kumar,
C. Faugeras,
M. Potemski,
C. Michel,
E. M. Hankiewicz,
T. Brauner,
Č. Drašar,
S. Schreyeck,
S. Grauer,
K. Brunner,
C. Gould,
C. Brüne,
L. W. Molenkamp
Abstract:
We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parameters: the fundamental bandgap and the band velocity. In a magnetic field, this model implies a unique property - spin splitting equal to twice the cyc…
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We report on magneto-optical studies of Bi2Se3, a representative member of the 3D topological insulator family. Its electronic states in bulk are shown to be well described by a simple Dirac-type Hamiltonian for massive particles with only two parameters: the fundamental bandgap and the band velocity. In a magnetic field, this model implies a unique property - spin splitting equal to twice the cyclotron energy: Es = 2Ec. This explains the extensive magneto-transport studies concluding a fortuitous degeneracy of the spin and orbital split Landau levels in this material. The Es = 2Ec match differentiates the massive Dirac electrons in bulk Bi2Se3 from those in quantum electrodynamics, for which Es = Ec always holds.
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Submitted 10 April, 2015;
originally announced April 2015.
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Suppressing twin formation in Bi2Se3 thin films
Authors:
N. V. Tarakina,
S. Schreyeck,
M. Luysberg,
S. Grauer,
C. Schumacher,
G. Karczewski,
K. Brunner,
C. Gould,
H. Buhmann,
R. E. Dunin-Borkowski,
L. W. Molenkamp
Abstract:
The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete s…
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The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray reflectivity, atomic force microscopy and probe-corrected scanning transmission electron microscopy. The use of a rough Fe-doped InP(111)B substrate results in complete suppression of twin formation in the Bi2Se3 thin films and a perfect interface between the films and their substrates. The only type of structural defects that persist in the "twin-free" films is an antiphase domain boundary, which is associated with variations in substrate height. It is also shown that the substrate surface termination determines which family of twin domains dominates.
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Submitted 22 March, 2015;
originally announced March 2015.
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Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates
Authors:
S. Schreyeck,
N. V. Tarakina,
G. Karczewski,
C. Schumacher,
T. Borzenko,
C. Bruene,
H. Buhmann,
C. Gould,
K. Brunner,
L. W. Molenkamp
Abstract:
Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to layers deposited on other substrates. The measured full width at half maximum of the rocking curve is Delta omega=13 arcsec, and the (omega-2theta) sc…
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Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to layers deposited on other substrates. The measured full width at half maximum of the rocking curve is Delta omega=13 arcsec, and the (omega-2theta) scans exhibit clear layer thickness fringes. Atomic force microscope images show triangular twin domains with sizes increasing with layer thickness. The structural quality of the domains is confirmed on the microscopic level by transmission electron microscopy.
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Submitted 14 February, 2013;
originally announced February 2013.
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Diffusion thermopower of (Ga,Mn)As/GaAs tunnel junctions
Authors:
Ts. Naydenova,
P. Dürrenfeld,
K. Tavakoli,
N. Pegard,
L. Ebel,
K. Pappert,
K. Brunner,
C. Gould,
L. W. Molenkamp
Abstract:
We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect…
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We report the observation of tunneling anisotropic magnetothermopower, a voltage response to a temperature difference across an interface between a normal and a magnetic semiconductor. The resulting voltage is related to the energy derivative of the density of states in the magnetic material, and thus has a strongly anisotropic response to the direction of magnetization in the material. The effect will have relevance to the operation of semiconductor spintronic devices, and may indeed already play a role in correctly interpreting the details of some earlier spin injection studies.
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Submitted 28 October, 2011;
originally announced October 2011.
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Fully electrically read-write device out of a ferromagnetic semiconductor
Authors:
S. Mark,
P. Dürrenfeld,
K. Pappert,
L. Ebel,
K. Brunner,
C. Gould,
L. W. Molenkamp
Abstract:
We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to desi…
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We report the realization of a read-write device out of the ferromagnetic semiconductor (Ga,Mn)As as the first step to fundamentally new information processing paradigm. Writing the magnetic state is achieved by current-induced switching and read-out of the state is done by the means of the tunneling anisotropic magneto resistance (TAMR) effect. This one bit demonstrator device can be used to design a electrically programmable memory and logic device.
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Submitted 20 December, 2010;
originally announced December 2010.
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Lateral magnetic anisotropy superlattice out of a single (Ga,Mn)As layer
Authors:
R. G. Dengel,
C. Gould,
J. Wenisch,
K. Brunner,
G. Schmidt,
L. W. Molenkamp
Abstract:
We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer.
We use lithographically induced strain relaxation to periodically modulate the magnetic anisotropy in a single (Ga,Mn)As layer. This results in a lateral magnetoresistance device where two non-volatile magnetic states exist at zero external magnetic field with resistances resulting from the orientation of two lithographically defined regions in a single and contiguous layer.
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Submitted 21 January, 2009;
originally announced January 2009.
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Independent magnetization behavior of a ferromagnetic metal/semiconductor hybrid system
Authors:
S. Mark,
C. Gould,
K. Pappert,
J. Wenisch,
K. Brunner,
G. Schmidt,
L. W. Molenkamp
Abstract:
We report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance states dependent on the magnetization direction of the individual layers. At zero magnetic field a tw…
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We report the discovery of an effect where two ferromagnetic materials, one semiconductor ((Ga,Mn)As) and one metal (permalloy), can be directly deposited on each other and still switch their magnetization independently. We use this independent magnetization behavior to create various resistance states dependent on the magnetization direction of the individual layers. At zero magnetic field a two layer device can reach up to four non-volatile resistance states.
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Submitted 2 December, 2008;
originally announced December 2008.
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Non-thermal photocoercivity effect in a ferromagnetic semiconductor
Authors:
G. V. Astakhov,
H. Hoffmann,
V. L. Korenev,
T. Kiessling,
J. Schwittek,
G. M. Schott,
C. Gould,
W. Ossau,
K. Brunner,
L. W. Molenkamp
Abstract:
We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a m…
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We report a photoinduced change of the coercive field, i.e., a photocoercivity effect (PCE), under very low intensity illumination of a low-doped (Ga,Mn)As ferromagnetic semiconductor. We find a strong correlation between the PCE and the sample resistivity. Spatially resolved dynamics of the magnetization reversal rule out any role of thermal heating in the origin of this PCE, and we propose a mechanism based on the light-induced lowering of the domain wall pinning energy. The PCE is local and reversible, allowing writing and erasing of magnetic images using light.
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Submitted 22 October, 2008;
originally announced October 2008.
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Detailed transport investigation of the magnetic anisotropy of (Ga,Mn)As
Authors:
K. Pappert,
C. Gould,
M. Sawicki,
J. Wenisch,
K. Brunner,
G. Schmidt,
L. W. Molenkamp
Abstract:
This paper discusses transport methods for the investigation of the (Ga,Mn)As magnetic anisotropy. Typical magnetoresistance behaviour for different anisotropy types is discussed, focusing on an in depth discussion of the anisotropy fingerprint technique and extending it to layers with primarily uniaxial magnetic anisotropy. We find that in all (Ga,Mn)As films studied, three anisotropy component…
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This paper discusses transport methods for the investigation of the (Ga,Mn)As magnetic anisotropy. Typical magnetoresistance behaviour for different anisotropy types is discussed, focusing on an in depth discussion of the anisotropy fingerprint technique and extending it to layers with primarily uniaxial magnetic anisotropy. We find that in all (Ga,Mn)As films studied, three anisotropy components are always present. The primary biaxial along ([100] and [010]) along with both uniaxial components along the [110] and [010] crystal directions which are often reported separately. Various fingerprints of typical (Ga,Mn)As transport samples at 4 K are included to illustrate the variation of the relative strength of these anisotropy terms. We further investigate the temperature dependence of the magnetic anisotropy and the domain wall nucleation energy with the help of the fingerprint method.
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Submitted 29 February, 2008;
originally announced February 2008.
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An extensive comparison of anisotropies in MBE grown (Ga,Mn)As material
Authors:
C. Gould,
S. Mark,
K. Pappert,
G. Dengel,
J. Wenisch,
R. P. Campion,
A. W. Rushforth,
D. Chiba,
Z. Li,
X. Liu,
W. Van Roy,
H. Ohno,
J. K. Furdyna,
B. Gallagher,
K. Brunner,
G. Schmidt,
L. W. Molenkamp
Abstract:
This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all…
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This paper reports on a detailed magnetotransport investigation of the magnetic anisotropies of (Ga,Mn)As layers produced by various sources worldwide. Using anisotropy fingerprints to identify contributions of the various higher order anisotropy terms, we show that the presence of both a [100] and a [110] uniaxial anisotropy in addition to the primary ([100] + [010]) anisotropy is common to all medium doped (Ga,Mn)As layers typically used in transport measurement, with the amplitude of these uniaxial terms being characteristic of the individual layers.
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Submitted 28 February, 2008;
originally announced February 2008.
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Control of magnetic anisotropy in (Ga,Mn)As by lithography-induced strain relaxation
Authors:
J. Wenisch,
C. Gould,
L. Ebel,
J. Storz,
K. Pappert,
M. J. Schmidt,
C. Kumpf,
G. Schmidt,
K. Brunner,
L. W. Molenkamp
Abstract:
We obtain control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using sophisticated X-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and…
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We obtain control of magnetic anisotropy in epitaxial (Ga,Mn)As by anisotropic strain relaxation in patterned structures. The strain in the structures is characterized using sophisticated X-ray techniques. The magnetic anisotropy before patterning of the layer, which shows biaxial easy axes along [100] and [010], is replaced by a hard axis in the direction of large elastic strain relaxation and a uniaxial easy axis in the direction where pseudomorphic conditions are retained. This strong anisotropy can not be explained by shape anisotropy and is attributed solely to lattice strain relaxation. Upon increasing the uniaxial strain anisotropy in the (Ga,Mn)As stripes, we also observe an increase in magnetic anisotropy.
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Submitted 19 January, 2007;
originally announced January 2007.
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Exploiting Locally Imposed Anisotropies in (Ga,Mn)As: a Non-volatile Memory Device
Authors:
K. Pappert,
S. Hümpfner,
C. Gould,
J. Wenisch,
K. Brunner,
G. Schmidt,
L. W. Molenkamp
Abstract:
Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of th…
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Progress in (Ga,Mn)As lithography has recently allowed us to realize structures where unique magnetic anisotropy properties can be imposed locally in various regions of a given device. We make use of this technology to fabricate a device in which we study transport through a constriction separating two regions whose magnetization direction differs by 90 degrees. We find that the resistance of the constriction depends on the flow of the magnetic field lines in the constriction region and demonstrate that such a structure constitutes a non-volatile memory device.
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Submitted 19 January, 2007;
originally announced January 2007.
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Lithographic engineering of anisotropies in (Ga,Mn)As
Authors:
S. Hümpfner,
M. Sawicki,
K. Pappert,
J. Wenisch,
K. Brunner,
C. Gould,
G. Schmidt,
T. Dietl,
L. W. Molenkamp
Abstract:
The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here we present a method which provides patterning induced anisotropy which not…
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The focus of studies on ferromagnetic semiconductors is moving from material issues to device functionalities based on novel phenomena often associated with the anisotropy properties of these materials. This is driving a need for a method to locally control the anisotropy in order to allow the elaboration of devices. Here we present a method which provides patterning induced anisotropy which not only can be applied locally, but also dominates over the intrinsic material anisotropy at all temperatures.
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Submitted 17 December, 2006;
originally announced December 2006.
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Transport Characterization of the Magnetic Anisotropy of (Ga,Mn)As
Authors:
K. Pappert,
S. Hümpfner,
J. Wenisch,
K. Brunner,
C. Gould,
G. Schmidt,
L. W. Molenkamp
Abstract:
The rich magnetic anisotropy of compressively strained (Ga,Mn)As has attracted great interest recently. Here we discuss a sensitive method to visualize and quantify the individual components of the magnetic anisotropy using transport. A set of high resolution transport measurements is compiled into color coded resistance polar plots, which constitute a fingerprint of the symmetry components of t…
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The rich magnetic anisotropy of compressively strained (Ga,Mn)As has attracted great interest recently. Here we discuss a sensitive method to visualize and quantify the individual components of the magnetic anisotropy using transport. A set of high resolution transport measurements is compiled into color coded resistance polar plots, which constitute a fingerprint of the symmetry components of the anisotropy. As a demonstration of the sensitivity of the method, we show that these typically reveal the presence of both the [-110] and the [010] uniaxial magnetic anisotropy component in (Ga,Mn)As layers, even when most other techniques reveal only one of these components.
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Submitted 6 November, 2006;
originally announced November 2006.
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Magnetization-Switched Metal-Insulator Transition in a (Ga,Mn)As Tunnel Device
Authors:
K. Pappert,
M. J. Schmidt,
S. Hümpfner,
C. Rüster,
G. M. Schott,
K. Brunner,
C. Gould,
G. Schmidt,
L. W. Molenkamp
Abstract:
We observe the occurrence of an Efros-Shklovskii gap in (Ga,Mn)As based tunnel junctions. The occurrence of the gap is controlled by the extent of the hole wave-function on the Mn acceptor atoms. Using k.p-type calculations we show that this extent depends crucially on the direction of the magnetization in the (Ga,Mn)As (which has two almost equivalent easy axes). This implies one can reversibly…
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We observe the occurrence of an Efros-Shklovskii gap in (Ga,Mn)As based tunnel junctions. The occurrence of the gap is controlled by the extent of the hole wave-function on the Mn acceptor atoms. Using k.p-type calculations we show that this extent depends crucially on the direction of the magnetization in the (Ga,Mn)As (which has two almost equivalent easy axes). This implies one can reversibly tune the system into the insulating or metallic state by changing the magnetization.
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Submitted 30 August, 2006;
originally announced August 2006.
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Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices
Authors:
C. Gould,
K. Pappert,
C. Rüster,
R. Giraud*,
T. Borzenko,
G. M. Schott,
K. Brunner,
G. Schmidt,
L. W. Molenkamp
Abstract:
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries . Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual…
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Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but using very dissimilar experimental schemes and device geometries . Here we report on the simultaneous observation of both effects in a single nanodevice, which constitutes a significant step forward towards the eventual realization of spintronic devices which make use of domain walls to store, transport, and manipulate information.
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Submitted 6 February, 2006;
originally announced February 2006.
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Anomalous in-plane magneto-optical anisotropy of self-assembled quantum dots
Authors:
T. Kiessling,
A. V. Platonov,
G. V. Astakhov,
T. Slobodskyy,
S. Mahapatra,
W. Ossau,
G. Schmidt,
K. Brunner,
L. W. Molenkamp
Abstract:
We report on a complex nontrivial behavior of the optical anisotropy of quantum dots that is induced by a magnetic field in the plane of the sample. We find that the optical axis either rotates in the opposite direction to that of the magnetic field or remains fixed to a given crystalline direction. A theoretical analysis based on the exciton pseudospin Hamiltonian unambiguously demonstrates tha…
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We report on a complex nontrivial behavior of the optical anisotropy of quantum dots that is induced by a magnetic field in the plane of the sample. We find that the optical axis either rotates in the opposite direction to that of the magnetic field or remains fixed to a given crystalline direction. A theoretical analysis based on the exciton pseudospin Hamiltonian unambiguously demonstrates that these effects are induced by isotropic and anisotropic contributions to the heavy-hole Zeeman term, respectively. The latter is shown to be compensated by a built-in uniaxial anisotropy in a magnetic field B_c = 0.4 T, resulting in an optical response typical for symmetric quantum dots.
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Submitted 12 January, 2006;
originally announced January 2006.
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Quantum-dot-based optical polarization conversion
Authors:
G. V. Astakhov,
T. Kiessling,
A. V. Platonov,
T. Slobodskyy,
S. Mahapatra,
W. Ossau,
G. Schmidt,
K. Brunner,
L. W. Molenkamp
Abstract:
We report circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots. The polarization conversion occurs under continuous wave excitation in absence of any magnetic field. The effect originates from quantum interference of linearly and circularly polarized photon states, induced by the natural anisotropic shape of the self assembled dots. The behav…
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We report circular-to-linear and linear-to-circular conversion of optical polarization by semiconductor quantum dots. The polarization conversion occurs under continuous wave excitation in absence of any magnetic field. The effect originates from quantum interference of linearly and circularly polarized photon states, induced by the natural anisotropic shape of the self assembled dots. The behavior can be qualitatively explained in terms of a pseudospin formalism.
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Submitted 7 September, 2005; v1 submitted 3 September, 2005;
originally announced September 2005.
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1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack
Authors:
C. Rüster,
C. Gould,
T. Jungwirth,
J. Sinova,
G. M. Schott,
R. Giraud,
K. Brunner,
G. Schmidt,
L. W. Molenkamp
Abstract:
We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong dependence of the electronic structure of ferromagnetic semiconductors on the magnetization orientation rather than from a parallel or antiparallel alignment of the contacts. The key novel spintronics features of this effect…
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We report the discovery of a super-giant tunneling anisotropic magnetoresistance in an epitaxially grown (Ga,Mn)As/GaAs/(Ga,Mn)As structure. The effect arises from a strong dependence of the electronic structure of ferromagnetic semiconductors on the magnetization orientation rather than from a parallel or antiparallel alignment of the contacts. The key novel spintronics features of this effect are: (i) both normal and inverted spin-valve like signals; (ii) a large non-hysteretic magnetoresistance for magnetic fields perpendicular to the interfaces; (iii) magnetization orientations for extremal resistance are, in general, not aligned with the magnetic easy and hard axis. (iv) Enormous amplification of the effect at low bias and temperatures.
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Submitted 25 August, 2004;
originally announced August 2004.
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Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer
Authors:
C. Gould,
C. Rüster,
T. Jungwirth,
E. Girgis,
G. M. Schott,
R. Giraud,
K. Brunner,
G. Schmidt,
L. W. Molenkamp
Abstract:
We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the a…
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We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal/insulator/ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction, and the two-step magnetization reversal process in this material.
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Submitted 28 July, 2004;
originally announced July 2004.
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Remote-doping scattering and the local field corrections in the 2D electron system in a modulation-doped Si/SiGe quantum well
Authors:
V. T. Dolgopolov,
E. V. Deviatov,
A. A. Shashkin,
U. Wieser,
U. Kunze,
G. Abstreiter,
K. Brunner
Abstract:
The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form…
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The small, about 30% magnetoresistance at the onset of full spin polarization in the 2D electron system in a modulation-doped Si/SiGe quantum well gives evidence that it is the remote doping that determines the transport scattering time. Measurements of the mobility in this strongly-interacting electron system with remote-doping scattering allow us to arrive at a conclusion that the Hubbard form underestimates the local field corrections by about a factor of 2.
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Submitted 6 October, 2003;
originally announced October 2003.
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Effect of dye doping on the charge carrier balance in PPV light emitting diodes as measured by admittance spectroscopy
Authors:
I. N. Hulea,
R. F. J. van der Scheer,
H. B. Brom,
Bea M. W. Langeveld-Voss,
A. van Dijken,
K. Brunner
Abstract:
Dye doping is a promising way to increase the spectral purity of polymer light-emitting diodes (LEDs). Here we analyze the frequency and field dependence of the complex admittance of Al-Ba-PPV-PEDOT-ITO LEDs with and without dye. We compare the charge carrier mobilities of pristine and dye-doped double-carrier and hole-only (Au replacing Al-Ba) devices. Dye doping is shown to significantly influ…
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Dye doping is a promising way to increase the spectral purity of polymer light-emitting diodes (LEDs). Here we analyze the frequency and field dependence of the complex admittance of Al-Ba-PPV-PEDOT-ITO LEDs with and without dye. We compare the charge carrier mobilities of pristine and dye-doped double-carrier and hole-only (Au replacing Al-Ba) devices. Dye doping is shown to significantly influence the electron mobilities while the hole mobilities are left unchanged and thereby changing the carrier balance in a double carrier device towards that of a hole only device. The minimum in the LED capacitance as function of voltage appears to be an excellent probe for the electron trapping phenomenon underlying the reduction of the mobility.
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Submitted 27 June, 2003;
originally announced June 2003.
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Spin-photocurrent in p-SiGe quantum wells under terahertz laser irradiation
Authors:
V. V. Bel'kov,
S. D. Ganichev,
Petra Schneider,
D. Schowalter,
U. Roessler,
W. Prettl,
E. L. Ivchenko,
R. Neumann,
K. Brunner,
G. Abstreiter
Abstract:
A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is shown that the CPGE becomes possible due to the built-in asymmetry of quantum wells (QWs) in compositionally stepped samples and in asymmetrically doped structures. The photocurrent arises due to optical spin orientation of free carriers in QWs with spin splitting in k-space. It is shown that the…
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A detailed study of the circular photogalvanic effect (CPGE) in SiGe structures is presented. It is shown that the CPGE becomes possible due to the built-in asymmetry of quantum wells (QWs) in compositionally stepped samples and in asymmetrically doped structures. The photocurrent arises due to optical spin orientation of free carriers in QWs with spin splitting in k-space. It is shown that the effect can be applied to probe the macroscopic in-plane symmetry of low dimensional structures and allowing to conclude on Rashba or Dresselhaus terms in the Hamiltonian.
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Submitted 21 January, 2003;
originally announced January 2003.