Showing 1–50 of 66 results for author: Rushforth, A W

Altermagnetism imaged and controlled down to the nanoscale

Authors: O. J. Amin, A. Dal Din, E. Golias, Y. Niu, A. Zakharov, S. C. Fromage, C. J. B. Fields, S. L. Heywood, R. B. Cousins, J. Krempasky, J. H. Dil, D. Kriegner, B. Kiraly, R. P. Campion, A. W. Rushforth, K. W. Edmonds, S. S. Dhesi, L. Šmejkal, T. Jungwirth, P. Wadley

Abstract: Nanoscale detection and control of the magnetic order underpins a broad spectrum of fundamental research and practical device applications. The key principle involved is the breaking of time-reversal ($\cal{T}$) symmetry, which in ferromagnets is generated by an internal magnetization. However, the presence of a net-magnetization also imposes severe limitations on compatibility with other prominen… ▽ More Nanoscale detection and control of the magnetic order underpins a broad spectrum of fundamental research and practical device applications. The key principle involved is the breaking of time-reversal ($\cal{T}$) symmetry, which in ferromagnets is generated by an internal magnetization. However, the presence of a net-magnetization also imposes severe limitations on compatibility with other prominent phases ranging from superconductors to topological insulators, as well as on spintronic device scalability. Recently, altermagnetism has been proposed as a solution to this restriction, since it shares the enabling $\cal{T}$-symmetry breaking characteristic of ferromagnetism, combined with the antiferromagnetic-like vanishing net-magnetization. To date, altermagnetic ordering has been inferred from spatially averaged probes. Here, we demonstrate nanoscale imaging and control of altermagnetic ordering ranging from nanoscale vortices to domain walls to microscale single-domain states in MnTe. We combine the $\cal{T}$-symmetry breaking sensitivity of X-ray magnetic circular dichroism with magnetic linear dichroism and photoemission electron microscopy, to achieve detailed imaging of the local altermagnetic ordering vector. A rich variety of spin configurations can be imposed using microstructure patterning or thermal cycling in magnetic fields. The demonstrated detection and control of altermagnetism paves the way for future research ranging from ultra-scalable digital and neuromorphic spintronic devices, to the interplay of altermagnetism with non-dissipative superconducting or topological phases. △ Less

Submitted 3 May, 2024; originally announced May 2024.

Comments: 17 pages, 3 figures

Antiferromagnetic half-skyrmions electrically generated and controlled at room temperature

Authors: O. J. Amin, S. F. Poole, S. Reimers, L. X. Barton, F. Maccherozzi, S. S. Dhesi, V. Novák, F. Křížek, J. S. Chauhan, R. P. Campion, A. W. Rushforth, T. Jungwirth, O. A. Tretiakov, K. W. Edmonds, P. Wadley

Abstract: Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of the… ▽ More Topologically protected magnetic textures, such as skyrmions, half-skyrmions (merons) and their antiparticles, constitute tiny whirls in the magnetic order. They are promising candidates for information carriers in next-generation memory devices, as they can be efficiently propelled at very high velocities using current-induced spin torques. Antiferromagnets have been shown to host versions of these textures, which have gained significant attention because of their potential for terahertz dynamics, deflection free motion, and improved size scaling due to the absence of stray field. Here we show that topological spin textures, merons and antimerons, can be generated at room temperature and reversibly moved using electrical pulses in thin film CuMnAs, a semimetallic antiferromagnet that is a testbed system for spintronic applications. The electrical generation and manipulation of antiferromagnetic merons is a crucial step towards realizing the full potential of antiferromagnetic thin films as active components in high density, high speed magnetic memory devices. △ Less

Submitted 1 July, 2022; originally announced July 2022.

Comments: 11 pages, 4 figures

Spectrum evolution and chirping of laser-induced spin wave packets in thin iron films

Authors: Ia. A. Filatov, P. I. Gerevenkov, M. Wang, A. W. Rushforth, A. M. Kalashnikova, N. E. Khokhlov

Abstract: We present the experimental study of ultrafast optical excitation of magnetostatic surface spin wave (MSSW) packets and their spectral properties in thin films of pure iron. As the packets leave the excitation area and propagate in space, their spectra evolve non-trivially. Particularly, low or high frequency components are suppressed at the border of the excitation area depending on the orientati… ▽ More We present the experimental study of ultrafast optical excitation of magnetostatic surface spin wave (MSSW) packets and their spectral properties in thin films of pure iron. As the packets leave the excitation area and propagate in space, their spectra evolve non-trivially. Particularly, low or high frequency components are suppressed at the border of the excitation area depending on the orientation of the external magnetic field with respect to the magnetocrystolline anisotropy axes of the film. The effect is ascribed to the ultrafast local heating of the film. Further, the time resolution of the implemented all-optical technique allows us to extract the chirp of the MSSW packet in the time domain via wavelet analysis. The chirp is a result of the group velocity dispersion of the MSSW and, thus, is controlled by the film magnetic parameters, magnetization and anisotropy, and external field orientation. The demonstrated tunable modulation of MSSW wave packets with femtosecond laser pulses may find application in future magnonic-photonic hybrid devices for wave-based data processing. △ Less

Submitted 28 February, 2022; v1 submitted 1 November, 2021; originally announced November 2021.

Comments: 6 pages, 4 figures, 1 table

Journal ref: Appl. Phys. Lett. 120, 112404 (2022)

Low-Energy Switching of Antiferromagnetic CuMnAs/ GaP Using sub-10 Nanosecond Current Pulses

Authors: K. A. Omari, L. X. Barton, O. Amin, R. P. Campion, A. W. Rushforth, P. Wadley, K. W. Edmonds

Abstract: The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic MRAM. CuMnAs is one promising AF material that exhibits such electrical switching ability, and has been studied to switch using electrical pulses of length millisecond… ▽ More The recently discovered electrical-induced switching of antiferromagnetic (AF) materials that have spatial inversion asymmetry has enriched the field of spintronics immensely and opened the door for the concept of antiferromagnetic MRAM. CuMnAs is one promising AF material that exhibits such electrical switching ability, and has been studied to switch using electrical pulses of length millisecond down to picosecond, but with little focus on nanosecond regime. We demonstrate here switching of CuMnAs/GaP using nanosecond pulses. Our results showed that in the nanosecond regime low-energy switching, high readout signal with highly reproducible behaviour down to a single pulse can be achieved. Moreover, a comparison of the two switching methods of orthogonal switching and polarity switching was done on same device showing two different behaviours that can be exploited selectively for different future memory/processing applications. △ Less

Submitted 9 June, 2021; originally announced June 2021.

Journal ref: Journal of Applied Physics 127, 193906 (2020)

Effect of magnetic anisotropy relaxation on laser-induced magnetization precession in thin galfenol films

Authors: P. I. Gerevenkov, D. V. Kuntu, Ia. A. Filatov, L. A. Shelukhin, M. Wang, D. P. Pattnaik, A. W. Rushforth, A. M. Kalashnikova, N. E. Khokhlov

Abstract: The rate and pathways of relaxation of a magnetic medium to its equilibrium following excitation with intense and short laser pulses are the key ingredients of ultrafast optical control of spins. Here we study experimentally the evolution of the magnetization and magnetic anisotropy of thin films of a ferromagnetic metal galfenol (Fe$_{0.81}$Ga$_{0.19}$) resulting from excitation with a femtosecon… ▽ More The rate and pathways of relaxation of a magnetic medium to its equilibrium following excitation with intense and short laser pulses are the key ingredients of ultrafast optical control of spins. Here we study experimentally the evolution of the magnetization and magnetic anisotropy of thin films of a ferromagnetic metal galfenol (Fe$_{0.81}$Ga$_{0.19}$) resulting from excitation with a femtosecond laser pulse. From the temporal evolution of the hysteresis loops we deduce that the magnetization $M_S$ and magnetic anisotropy parameters $K$ recover within a nanosecond, and the ratio between $K$ and $M_S$ satisfies the thermal equilibrium's power law in the whole time range spanning from a few picoseconds to 3 nanoseconds. We further use the experimentally obtained relaxation times of $M_S$ and $K$ to analyze the laser-induced precession and demonstrate how they contribute to its frequency evolution at the nanosecond timescale. △ Less

Submitted 15 October, 2021; v1 submitted 13 May, 2021; originally announced May 2021.

Comments: 8 pages, 7 figures

Journal ref: Phys. Rev. Materials 5, 094407 (2021)

Protected Long-Distance Guiding of Hypersound Underneath a Nano-Corrugated Surface

Authors: Dmytro D. Yaremkevich, Alexey V. Scherbakov, Serhii M. Kukhtaruk, Tetiana L. Linnik, Nikolay E. Khokhlov, Felix Godejohann, Olga A. Dyatlova, Achim Nadzeyka, Debi P. Pattnaik, Mu Wang, Syamashree Roy, Richard P. Campion, Andrew W. Rushforth, Vitalyi E. Gusev, Andrey V. Akimov, Manfred Bayer

Abstract: Within a new paradigm for communications on the nanoscale, high-frequency surface acoustic waves are becoming effective data carrier and encoder. On-chip communications require acoustic wave propagation along nano-corrugated surfaces which strongly scatter traditional Rayleigh waves. Here we propose the delivery of information using subsurface acoustic waves with hypersound frequencies ~20 GHz, wh… ▽ More Within a new paradigm for communications on the nanoscale, high-frequency surface acoustic waves are becoming effective data carrier and encoder. On-chip communications require acoustic wave propagation along nano-corrugated surfaces which strongly scatter traditional Rayleigh waves. Here we propose the delivery of information using subsurface acoustic waves with hypersound frequencies ~20 GHz, which is a nanoscale analogue of subsurface sound waves in the ocean. A bunch of subsurface hypersound modes is generated by pulsed optical excitation in a multilayer semiconductor structure with a metallic nanograting on top. The guided hypersound modes propagate coherently beneath the nanograting, retaining the surface imprinted information, on a distance of more than 50 μm which essentially exceeds the propagation length of Rayleigh waves. The concept is suitable for interfacing single photon emitters, such as buried quantum dots, carrying coherent spin excitations in magnonic devices, and encoding the signals for optical communications at the nanoscale. △ Less

Submitted 20 January, 2021; originally announced January 2021.

Comments: 18 pages (inc. references), 5 figures

Journal ref: ACS Nano, 15 (3), 4802 (2021)

Transition magnon modes in thin ferromagnetic nanogratings

Authors: S. M. Kukhtaruk, A. W. Rushforth, F. Godejohann, A. V. Scherbakov, M. Bayer

Abstract: This work presents micromagnetic simulations in ferromagnetic nanogratings for the full range of directions of an applied in-plane external magnetic field. We focus on the modification of the magnon mode characteristics when the magnetic field orientation is gradually changed between the classical Damon-Eshbach (DE) and backward-volume (BV) geometries. We found that in a specific range of field di… ▽ More This work presents micromagnetic simulations in ferromagnetic nanogratings for the full range of directions of an applied in-plane external magnetic field. We focus on the modification of the magnon mode characteristics when the magnetic field orientation is gradually changed between the classical Damon-Eshbach (DE) and backward-volume (BV) geometries. We found that in a specific range of field directions, the magnon mode parameters differ significantly from the parameters in the classical cases, namely, the modes are characterized by complex spatial distributions and have low group velocities. The center of this range corresponds to the direction of the external magnetic field, which gives the maximal nonuniform distribution of the static magnetization in the nanogratings. △ Less

Submitted 21 July, 2022; v1 submitted 25 June, 2020; originally announced June 2020.

Comments: 20 pages, 15 figures

Journal ref: Phys. Rev. B \textbf{106}, 064411 (2022)

Complementary lateral-spin-orbit building blocks for programmable logic and in-memory computing

Authors: Nan Zhang, Yi Cao, Yucai Li, Andrew W. Rushforth, Yang Ji, Houzhi Zheng, Kaiyou Wang

Abstract: Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as ele… ▽ More Current-driven switching of nonvolatile spintronic materials and devices based on spin-orbit torques offer fast data processing speed, low power consumption, and unlimited endurance for future information processing applications. Analogous to conventional CMOS technology, it is important to develop a pair of complementary spin-orbit devices with differentiated magnetization switching senses as elementary building blocks for realizing sophisticated logic functionalities. Various attempts using external magnetic field or complicated stack/circuit designs have been proposed, however, plainer and more feasible approaches are still strongly desired. Here we show that a pair of two locally laser annealed perpendicular Pt/Co/Pt devices with opposite laser track configurations and thereby inverse field-free lateral spin-orbit torques (LSOTs) induced switching senses can be adopted as such complementary spin-orbit building blocks. By electrically programming the initial magnetization states (spin down/up) of each sample, four Boolean logic gates of AND, OR, NAND and NOR, as well as a spin-orbit half adder containing an XOR gate, were obtained. Moreover, various initialization-free, working current intensity-programmable stateful logic operations, including the material implication (IMP) gate, were also demonstrated by regarding the magnetization state as a logic input. Our complementary LSOT building blocks provide an applicable way towards future efficient spin logics and in-memory computing architectures. △ Less

Submitted 14 March, 2020; originally announced March 2020.

Comments: 22 pages, 4 figures

Resonant thermal energy transfer to magnons in a ferromagnetic nanolayer

Authors: Michal Kobecki, Alexey V. Scherbakov, Tetiana L. Linnik, Serhii M. Kukhtaruk, Vitalyi E. Gusev, Debi P. Pattnaik, Ilya A. Akimov, Andrew W. Rushforth, Andrey V. Akimov, Manfred Bayer

Abstract: Energy harvesting is a modern concept which makes dissipated heat useful by transferring thermal energy to other excitations. Most of the existing principles for energy harvesting are realized in systems which are heated continuously, for example generating DC voltage in thermoelectric devices. Here we present the concept of high-frequency energy harvesting where the dissipated heat in a sample ex… ▽ More Energy harvesting is a modern concept which makes dissipated heat useful by transferring thermal energy to other excitations. Most of the existing principles for energy harvesting are realized in systems which are heated continuously, for example generating DC voltage in thermoelectric devices. Here we present the concept of high-frequency energy harvesting where the dissipated heat in a sample excites resonant magnons in a 5-nm thick ferromagnetic metal layer. The sample is excited by femtosecond laser pulses with a repetition rate of 10 GHz which results in temperature modulation at the same frequency with amplitude ~0.1 K. The alternating temperature excites magnons in the ferromagnetic nanolayer which are detected by measuring the net magnetization precession. When the magnon frequency is brought onto resonance with the optical excitation, a 12-fold increase of the amplitude of precession indicates efficient resonant heat transfer from the lattice to coherent magnons. The demonstrated principle may be used for energy harvesting in various nanodevices operating at GHz and sub-THz frequency ranges. △ Less

Submitted 15 May, 2020; v1 submitted 27 January, 2020; originally announced January 2020.

Comments: Manuscript: 12 pages, 3 figures; Supplemental information: 7 pages; 4 figures, 3 tables

Spin flop and crystalline anisotropic magnetoresistance in CuMnAs

Authors: M. Wang, C. Andrews, S. Reimers, O. J. Amin, P. Wadley, R. P. Campion, S. F. Poole, J. Felton, K. W. Edmonds, B. L. Gallagher, A. W. Rushforth, O. Makarovsky, K. Gas, M. Sawicki, D. Kriegner, J. Zubac, K. Olejnik, V. Novak, T. Jungwirth, M. Shahrokhvand, U. Zeitler, S. S. Dhesi, F. Maccherozzi

Abstract: Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a b… ▽ More Recent research works have shown that the magnetic order in some antiferromagnetic materials can be manipulated and detected electrically, due to two physical mechanisms: Neel-order spin-orbit torques and anisotropic magnetoresistance. While these observations open up opportunities to use antiferromagnets for magnetic memory devices, different physical characterization methods are required for a better understanding of those mechanisms. Here we report a magnetic field induced rotation of the antiferromagnetic Neel vector in epitaxial tetragonal CuMnAs thin films. Using soft x-ray magnetic linear dichroism spectroscopy, x-ray photoemission electron microscopy, integral magnetometry and magneto-transport methods, we demonstrate spin-flop switching and continuous spin reorientation in antiferromagnetic films with uniaxial and biaxial magnetic anisotropies, respectively. From field-dependent measurements of the magnetization and magnetoresistance, we obtain key material parameters including the anisotropic magnetoresistance coefficients, magnetocrystalline anisotropy, spin-flop and exchange fields. △ Less

Submitted 21 June, 2021; v1 submitted 27 November, 2019; originally announced November 2019.

Comments: 26 pages, 6 figures

Journal ref: Phys. Rev. B 101, 094429 (2020)

Magnon polaron formed by selectively coupled coherent magnon and phonon modes of a surface patterned ferromagnet

Authors: Felix Godejohann, Alexey V. Scherbakov, Serhii M. Kukhtaruk, Alexander N. Poddubny, Dmytro D. Yaremkevich, Mu Wang, Achim Nadzeyka, Dmitri R. Yakovlev, Andrew. W. Rushforth, Andrey V. Akimov, Manfred Bayer

Abstract: Strong coupling between two quanta of different excitations leads to the formation of a hybridized state which paves a way for exploiting new degrees of freedom to control phenomena with high efficiency and precision. A magnon polaron is the hybridized state of a phonon and a magnon, the elementary quanta of lattice vibrations and spin waves in a magnetically-ordered material. A magnon polaron can… ▽ More Strong coupling between two quanta of different excitations leads to the formation of a hybridized state which paves a way for exploiting new degrees of freedom to control phenomena with high efficiency and precision. A magnon polaron is the hybridized state of a phonon and a magnon, the elementary quanta of lattice vibrations and spin waves in a magnetically-ordered material. A magnon polaron can be formed at the intersection of the magnon and phonon dispersions, where their frequencies coincide. The observation of magnon polarons in the time domain has remained extremely challenging because the weak interaction of magnons and phonons and their short lifetimes jeopardize the strong coupling required for the formation of a hybridized state. Here, we overcome these limitations by spatial matching of magnons and phonons in a metallic ferromagnet with a nanoscale periodic surface pattern. The spatial overlap of the selected phonon and magnon modes formed in the periodic ferromagnetic structure results in a high coupling strength which, in combination with their long lifetimes allows us to find clear evidence of an optically excited magnon polaron. We show that the symmetries of the localized magnon and phonon states play a crucial role in the magnon polaron formation and its manifestation in the optically excited magnetic transients. △ Less

Submitted 22 June, 2020; v1 submitted 4 September, 2019; originally announced September 2019.

Comments: 18 pages, 4 figures + Supplementary materials (available through the corresponding link given in References)

Journal ref: Phys. Rev. B 102, 144438 (2020)

Optical excitation of propagating magnetostatic waves in an epitaxial Galfenol film by an ultrafast magnetic anisotropy change

Authors: Nikolai E. Khokhlov, Petr I. Gerevenkov, Leonid A. Shelukhin, Andrei V. Azovtsev, Nikolay A. Pertsev, Mu Wang, Andrew W. Rushforth, Alexey V. Scherbakov, Alexandra M. Kalashnikova

Abstract: Using a time-resolved optically-pumped scanning optical microscopy technique we demonstrate the laser-driven excitation and propagation of spin waves in a 20-nm film of a ferromagnetic metallic alloy Galfenol epitaxially grown on a GaAs substrate. In contrast to previous all-optical studies of spin waves we employ laser-induced thermal changes of magnetocrystalline anisotropy as an excitation mech… ▽ More Using a time-resolved optically-pumped scanning optical microscopy technique we demonstrate the laser-driven excitation and propagation of spin waves in a 20-nm film of a ferromagnetic metallic alloy Galfenol epitaxially grown on a GaAs substrate. In contrast to previous all-optical studies of spin waves we employ laser-induced thermal changes of magnetocrystalline anisotropy as an excitation mechanism. A tightly focused 70-fs laser pulse excites packets of magnetostatic surface waves with a $e^{-1}$ propagation length of 3.4 $μ$m, which is comparable with that of permalloy. As a result, laser-driven magnetostatic spin waves are clearly detectable at distances up to 10 $μ$m, which promotes epitaxial Galfenol films to the limited family of materials suitable for magnonic devices. A pronounced in-plane magnetocrystalline anisotropy of the Galfenol film offers an additional degree of freedom for manipulating the spin waves' parameters. Reorientation of an in-plane external magnetic field relative to the crystallographic axes of the sample tunes the frequency, amplitude and propagation length of the excited waves. △ Less

Submitted 20 August, 2019; v1 submitted 10 April, 2019; originally announced April 2019.

Comments: 10 pages, 5 figures, original article, revised version from 20 Aug 2019

Journal ref: Phys. Rev. Applied 12, 044044 (2019)

Optical excitation of single- and multi-mode magnetization precession in Galfenol nanolayers

Authors: A. V. Scherbakov, A. P. Danilov, F. Godejohann, T. L. Linnik, B. A. Glavin, L. A. Shelukhin, D. P. Pattnaik, M. Wang, A. W. Rushforth, D. R. Yakovlev, A. V. Akimov, M. Bayer

Abstract: We demonstrate a variety of precessional responses of the magnetization to ultrafast optical excitation in nanolayers of Galfenol (Fe,Ga), which is a ferromagnetic material with large saturation magnetization and enhanced magnetostriction. The particular properties of Galfenol, including cubic magnetic anisotropy and weak damping, allow us to detect up to 6 magnon modes in a 120-nm layer, and a si… ▽ More We demonstrate a variety of precessional responses of the magnetization to ultrafast optical excitation in nanolayers of Galfenol (Fe,Ga), which is a ferromagnetic material with large saturation magnetization and enhanced magnetostriction. The particular properties of Galfenol, including cubic magnetic anisotropy and weak damping, allow us to detect up to 6 magnon modes in a 120-nm layer, and a single mode with effective damping $α_{eff}$ = 0.005 and frequency up to 100 GHz in a 4-nm layer. This is the highest frequency observed to date in time-resolved experiments with metallic ferromagnets. We predict that detection of magnetization precession approaching THz frequencies should be possible with Galfenol nanolayers. △ Less

Submitted 4 December, 2018; originally announced December 2018.

Journal ref: Phys. Rev. Applied 11, 031003 (2019)

Optically driven spin pumping mediating collective magnetization dynamics in a spin valve structure

Authors: A. P. Danilov, A. V. Scherbakov, B. A. Glavin, T. L. Linnik, A. M. Kalashnikova, L. A. Shelukhin, D. P. Pattnaik, A. W. Rushforth, C. J. Love, S. A. Cavill, D. R. Yakovlev, M. Bayer

Abstract: We demonstrate spin pumping, i.e. the generation of a pure spin current by precessing magnetization, without application of microwave radiation commonly used in spin pumping experiments. We use femtosecond laser pulses to simultaneously launch the magnetization precession in each of two ferromagnetic layers of a Galfenol-based spin valve and monitor the temporal evolution of the magnetizations. Th… ▽ More We demonstrate spin pumping, i.e. the generation of a pure spin current by precessing magnetization, without application of microwave radiation commonly used in spin pumping experiments. We use femtosecond laser pulses to simultaneously launch the magnetization precession in each of two ferromagnetic layers of a Galfenol-based spin valve and monitor the temporal evolution of the magnetizations. The spin currents generated by the precession cause a dynamic coupling of the two layers. This coupling has dissipative character and is especially efficient when the precession frequencies in the two layers are in resonance, where coupled modes with strongly different decay rates are formed. △ Less

Submitted 19 May, 2018; originally announced May 2018.

Comments: 5 pages, 3 figures

Journal ref: Phys. Rev. B 98, 060406 (2018)

Negative spin-Hall angle and anisotropic spin-orbit torques in epitaxial IrMn

Authors: V. Tshitoyan, P. Wadley, M. Wang, A. W. Rushforth, A. J. Ferguson

Abstract: A spin-torque ferromagnetic resonance study is performed in epitaxial $\mathrm{Fe / Ir_{15}Mn_{85}}$ bilayers with different Fe thicknesses. We measure a negative spin-Hall angle of a few percent in the antiferromagnetic IrMn in contrast to previously reported positive values. A large spin-orbit field with Rashba symmetry opposing the Oersted field is also present. Magnitudes of measured spin-orbi… ▽ More A spin-torque ferromagnetic resonance study is performed in epitaxial $\mathrm{Fe / Ir_{15}Mn_{85}}$ bilayers with different Fe thicknesses. We measure a negative spin-Hall angle of a few percent in the antiferromagnetic IrMn in contrast to previously reported positive values. A large spin-orbit field with Rashba symmetry opposing the Oersted field is also present. Magnitudes of measured spin-orbit torques depend on the crystallographic direction of current and are correlated with the exchange bias direction set during growth. We suggest that the uncompensated moments at the Fe / IrMn interface are responsible for the observed anisotropy. Our findings highlight the importance of crystalline and magnetic structures for the spin-Hall effect in antiferromagnets. △ Less

Submitted 3 January, 2018; originally announced January 2018.

Comments: 6 pages, 5 figures

Generation of a localized microwave magnetic field by coherent phonons in a ferromagnetic nanograting

Authors: A. S. Salasyuk, A. V. Rudkovskaya, A. P. Danilov, B. A. Glavin, S. M. Kukhtaruk, M. Wang, A. W. Rushforth, P. A. Nekludova, S. V. Sokolov, A. A. Elistratov, D. R. Yakovlev, M. Bayer, A. V. Akimov, A. V. Scherbakov

Abstract: A high-amplitude microwave magnetic field localized at the nanoscale is a desirable tool for various applications within the rapidly developing field of nanomagnetism. Here, we drive magnetization precession by coherent phonons in a metal ferromagnetic nanograting and generate ac-magnetic induction with extremely high amplitude (up to $10$ mT) and nanometer scale localization in the grating groove… ▽ More A high-amplitude microwave magnetic field localized at the nanoscale is a desirable tool for various applications within the rapidly developing field of nanomagnetism. Here, we drive magnetization precession by coherent phonons in a metal ferromagnetic nanograting and generate ac-magnetic induction with extremely high amplitude (up to $10$ mT) and nanometer scale localization in the grating grooves. We trigger the magnetization by a laser pulse which excites localized surface acoustic waves. The developed technique has prospective uses in several areas of research and technology, including spatially resolved access to spin states for quantum technologies. △ Less

Submitted 8 December, 2017; originally announced December 2017.

Comments: 5 pages, 3 figures, and Supplemental Materials

Journal ref: Phys. Rev. B 97, 060404 (2018)

The effect of dynamical compressive and shear strain on magnetic anisotropy in low symmetry ferromagnetic film

Authors: T. L. Linnik, V. N. Kats, J. Jäger, A. S. Salasyuk, D. R. Yakovlev, A. W. Rushforth, A. V. Akimov, A. M. Kalashnikova, M. Bayer, A. V. Scherbakov

Abstract: Dynamical strain generated upon excitation of a metallic film by a femtosecond laser pulse may become a versatile tool enabling control of magnetic state of thin films and nanostructures via inverse magnetostriction on a picosecond time scale. Here we explore two alternative approaches to manipulate magnetocrystalline anisotropy and excite magnetization precession in a low-symmetry film of a magne… ▽ More Dynamical strain generated upon excitation of a metallic film by a femtosecond laser pulse may become a versatile tool enabling control of magnetic state of thin films and nanostructures via inverse magnetostriction on a picosecond time scale. Here we explore two alternative approaches to manipulate magnetocrystalline anisotropy and excite magnetization precession in a low-symmetry film of a magnetic metallic alloy galfenol (Fe,Ga) either by injecting picosecond strain pulse into it from a substrate or by generating dynamical strain of complex temporal profile in the film directly. In the former case we realize ultrafast excitation of magnetization dynamics solely by strain pulses. In the latter case optically-generated strain emerged abruptly in the film modifies its magnetocrystalline anisotropy, competing with heat-induced change of anisotropy parameters. We demonstrate that the optically-generated strain remains efficient for launching magnetization precession, when the heat-induced changes of anisotropy parameters do not trigger the precession anymore. We emphasize that in both approaches the ultrafast change of magnetic anisotropy mediating the precession excitation relies on mixed, compressive and shear, character of the dynamical strain, which emerges due to low-symmetry of the metallic film under study. △ Less

Submitted 3 May, 2017; v1 submitted 20 November, 2016; originally announced November 2016.

Comments: 12 pages, 5 figures

Journal ref: Phys. Scr. 92, 054006 (2017)

Effect of lithographically-induced strain relaxation on the magnetic domain configuration in microfabricated epitaxially grown Fe81Ga19

Authors: R. P. Beardsley, D. E. Parkes, J. Zemen, S. Bowe, K. W. Edmonds, C. Reardon, F. Maccherozzi, I. Isakov, P. A. Warburton, R. P. Campion, B. L. Gallagher, S. A. Cavill, A. W. Rushforth

Abstract: We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline and shape induced anisotropies to play a crucial role in stabilising a flux-closing domain pattern. We… ▽ More We investigate the role of lithographically-induced strain relaxation in a micron-scaled device fabricated from epitaxial thin films of the magnetostrictive alloy Fe81Ga19. The strain relaxation due to lithographic patterning induces a magnetic anisotropy that competes with the magnetocrystalline and shape induced anisotropies to play a crucial role in stabilising a flux-closing domain pattern. We use magnetic imaging, micromagnetic calculations and linear elastic modelling to investigate a region close to the edges of an etched structure. This highly-strained edge region has a significant influence on the magnetic domain configuration due to an induced magnetic anisotropy resulting from the inverse magnetostriction effect. We investigate the competition between the strain-induced and shape-induced anisotropy energies, and the resultant stable domain configurations, as the width of the bar is reduced to the nanoscale range. Understanding this behaviour will be important when designing hybrid magneto-electric spintronic devices based on highly magnetostrictive materials. △ Less

Submitted 10 February, 2017; v1 submitted 9 September, 2016; originally announced September 2016.

Journal ref: Sci. Rep. 7, 42107 (2017)

Precise tuning of the Curie temperature of (Ga,Mn)As-based magnetic semiconductors by hole compensation: Support for valence-band ferromagnetism

Authors: Shengqiang Zhou, Lin Li, Ye Yuan, A. W. Rushforth, Lin Chen, Yutian Wang, R. Böttger, R. Heller, Jianhua Zhao, K. W. Edmonds, R. P. Campion, B. L. Gallagher, C. Timm, M. Helm

Abstract: For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by car… ▽ More For the prototype diluted ferromagnetic semiconductor (Ga,Mn)As, there is a fundamental concern about the electronic states near the Fermi level, i.e., whether the Fermi level resides in a well-separated impurity band derived from Mn doping (impurity-band model) or in the valence band that is already merged with the Mn-derived impurity band (valence-band model). We investigate this question by carefully shifting the Fermi level by means of carrier compensation. We use helium-ion implantation, a standard industry technology, to precisely compensate the hole doping of GaAs-based diluted ferromagnetic semiconductors while keeping the Mn concentration constant. We monitor the change of Curie temperature ($T_C$) and conductivity. For a broad range of samples including (Ga,Mn)As and (Ga,Mn)(As,P) with various Mn and P concentrations, we observe a smooth decrease of $T_C$ with carrier compensation over a wide temperature range while the conduction is changed from metallic to insulating. The existence of $T_C$ below 10\,K is also confirmed in heavily compensated samples. Our experimental results are naturally explained within the valence-band picture. △ Less

Submitted 15 August, 2016; v1 submitted 22 February, 2016; originally announced February 2016.

Comments: 14 pages, 10 figures

Journal ref: Phys. Rev. B 94, 075205 (2016)

Resonant driving of magnetization precession in a ferromagnetic layer by coherent monochromatic phonons

Authors: J. V. Jäger, A. V. Scherbakov, B. A. Glavin, A. S. Salasyuk, R. P. Campion, A. W. Rushforth, D. R. Yakovlev, A. V. Akimov, M. Bayer

Abstract: We realize resonant driving of the magnetization precession by monochromatic phonons in a thin ferromagnetic layer embedded into a phononic Fabry-Perot resonator. A femtosecond laser pulse excites resonant phonon modes of the structure in the 10-40 GHz frequency range. By applying an external magnetic field, we tune the precession frequency relative to the frequency of the phonons localized in the… ▽ More We realize resonant driving of the magnetization precession by monochromatic phonons in a thin ferromagnetic layer embedded into a phononic Fabry-Perot resonator. A femtosecond laser pulse excites resonant phonon modes of the structure in the 10-40 GHz frequency range. By applying an external magnetic field, we tune the precession frequency relative to the frequency of the phonons localized in the cavity and observe the enormous increase in the amplitude of the magnetization precession when the frequencies of free magnetization precession and phonons localized in the cavity are equal. △ Less

Submitted 7 May, 2015; originally announced May 2015.

Comments: 11 pages, 3 figures

Electrical switching of an antiferromagnet

Authors: Peter Wadley, Bryn Howells, Jakub Zelezny, Carl Andrews, Victoria Hills, Richard P. Campion, Vit Novak, Frank Freimuth, Yuriy Mokrousov, Andrew W. Rushforth, Kevin W. Edmonds, Bryan L. Gallagher, Tomas Jungwirth

Abstract: Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the ke… ▽ More Louis Neel pointed out in his Nobel lecture that while abundant and interesting from a theoretical viewpoint, antiferromagnets did not seem to have any applications. Indeed, the alternating directions of magnetic moments on individual atoms and the resulting zero net magnetization make antiferromagnets hard to control by tools common in ferromagnets. Remarkably, Neel in his lecture provides the key which, as we show here, allows us to control antiferromagnets by electrical means analogous to those which paved the way to the development of ferromagnetic spintronics applications. The key noted by Neel is the equivalence of antiferromagnets and ferromagnets for effects that are an even function of the magnetic moment. Based on even-in-moment relativistic transport phenomena, we demonstrate room-temperature electrical switching between two stable configurations combined with electrical read-out in antiferromagnetic CuMnAs thin film devices. Our magnetic memory is insensitive to and produces no magnetic field perturbations which illustrates the unique merits of antiferromagnets for spintronics. △ Less

Submitted 20 July, 2015; v1 submitted 12 March, 2015; originally announced March 2015.

Comments: 16 pages, 4 figures

Journal ref: P. Wadley et al., Science 10.1126/science.aab1031 (2016)

Modification of perpendicular magnetic anisotropy and domain wall velocity in Pt/Co/Pt by voltage-induced strain

Authors: P. M. Shepley, A. W. Rushforth, M. Wang, G. Burnell, T. A. Moore

Abstract: The perpendicular magnetic anisotropy K$_e$$_f$$_f$, magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85-1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. K$_e$$_f$$_f$, measured by the extraordinary Hall effect, is reduced by 10 kJ/m$^3$ by tensile strain out-of-plane ε$_z$ = 9 x 10-4, independently of the film thicknes… ▽ More The perpendicular magnetic anisotropy K$_e$$_f$$_f$, magnetization reversal, and field-driven domain wall velocity in the creep regime are modified in Pt/Co(0.85-1.0 nm)/Pt thin films by strain applied via piezoelectric transducers. K$_e$$_f$$_f$, measured by the extraordinary Hall effect, is reduced by 10 kJ/m$^3$ by tensile strain out-of-plane ε$_z$ = 9 x 10-4, independently of the film thickness, indicating a dominant volume contribution to the magnetostriction. The same strain reduces the coercive field by 2-4 Oe, and increases the domain wall velocity measured by wide-field Kerr microscopy by 30-100 %, with larger changes observed for thicker Co layers. We consider how strain-induced changes in the perpendicular magnetic anisotropy can modify the coercive field and domain wall velocity. △ Less

Submitted 19 March, 2015; v1 submitted 12 August, 2014; originally announced August 2014.

Journal ref: Scientific Reports, 5, 7921 (2015)

Comparison of micromagnetic parameters of ferromagnetic semiconductors (Ga,Mn)(As,P) and (Ga,Mn)As

Authors: N. Tesarova, D. Butkovicova, R. P. Campion, A. W. Rushforth, K. W. Edmonds, P. Wadley, B. L. Gallagher, E. Schmoranzerova, F. Trojanek, P. Maly, P. Motloch, V. Novak, T. Jungwirth, P. Nemec

Abstract: We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis o… ▽ More We report on the determination of micromagnetic parameters of epilayers of the ferromagnetic semiconductor (Ga,Mn)As, which has easy axis in the sample plane, and (Ga,Mn)(As,P) which has easy axis perpendicular to the sample plane. We use an optical analog of ferromagnetic resonance where the laser-pulse-induced precession of magnetization is measured directly in the time domain. By the analysis of a single set of pump-and-probe magneto-optical data we determined the magnetic anisotropy fields, the spin stiffness and the Gilbert damping constant in these two materials. We show that incorporation of 10% of phosphorus in (Ga,Mn)As with 6% of manganese leads not only to the expected sign change of the perpendicular to plane anisotropy field but also to an increase of the Gilbert damping and to a reduction of the spin stiffness. The observed changes in the micromagnetic parameters upon incorporating P in (Ga,Mn)As are consistent with the reduced hole density, conductivity, and Curie temperature of the (Ga,Mn)(As,P) material. We report that the magnetization precession damping is stronger for the n = 1 spin wave resonance mode than for the n = 0 uniform magnetization precession mode. △ Less

Submitted 19 May, 2014; originally announced May 2014.

Comments: 19 pages, 8 figures

Journal ref: Phys. Rev. B 90, 155203 (2014)

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Authors: P. Wadley, V. Novák, R. P. Campion, C. Rinaldi, X. Martí, H. Reichlová, J. Zelezný, J. Gazquez, M. A. Roldan, M. Varela, D. Khalyavin, S. Langridge, D. Kriegner, F. Máca, J. Masek, R. Bertacco, V. Holy, A. W. Rushforth, K. W. Edmonds, B. L. Gallagher, C. T. Foxon, J. Wunderlich, T. Jungwirth

Abstract: Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and c… ▽ More Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we report the epitaxial growth of a new high-temperature antiferromagnetic material, tetragonal CuMnAs, which exhibits excellent crystal quality, chemical order and compatibility with existing semiconductor technologies. We demonstrate its growth on the III-V semiconductors GaAs and GaP, and show that the structure is also lattice matched to Si. Neutron diffraction shows collinear antiferromagnetic order with a high Neél temperature. Combined with our demonstration of room-temperature exchange coupling in a CuMnAs/Fe bilayer, we conclude that tetragonal CuMnAs films are suitable candidate materials for antiferromagnetic spintronics. △ Less

Submitted 14 February, 2014; originally announced February 2014.

Comments: 16 pages, 5 figures, Published in Nature Communications (2013)

Journal ref: Nat. Commun. 4:2322

Spin-orbit torque opposing the Oersted torque in ultrathin Co/Pt bilayers

Authors: T. D. Skinner, M. Wang, A. T. Hindmarch, A. W. Rushforth, A. C. Irvine, D. Heiss, H. Kurebayashi, A. J. Ferguson

Abstract: Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven FMR technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, were analysed to determine the symmetries and relative magnitudes of the spin-orbit torques. Both anti-damping (Slonczewski) and field-like torques were observed. As the ferromagnet thickness was r… ▽ More Current-induced torques in ultrathin Co/Pt bilayers were investigated using an electrically driven FMR technique. The angle dependence of the resonances, detected by a rectification effect as a voltage, were analysed to determine the symmetries and relative magnitudes of the spin-orbit torques. Both anti-damping (Slonczewski) and field-like torques were observed. As the ferromagnet thickness was reduced from 3 to 1 nm, the sign of the field-like torque reversed. This observation is consistent with the emergence of a Rashba spin orbit torque in ultra-thin bilayers. △ Less

Submitted 9 December, 2013; originally announced December 2013.

Spin-dependent phenomena and device concepts explored in (Ga,Mn)As

Authors: T. Jungwirth, J. Wunderlich, V. Novak, K. Olejnik, B. L. Gallagher, R. P. Campion, K. W. Edmonds, A. W. Rushforth, A. J. Ferguson, P. Nemec

Abstract: Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that… ▽ More Over the past two decades, the research of (Ga,Mn)As has led to a deeper understanding of relativistic spin-dependent phenomena in magnetic systems. It has also led to discoveries of new effects and demonstrations of unprecedented functionalities of experimental spintronic devices with general applicability to a wide range of materials. In this article we review the basic material properties that make (Ga,Mn)As a favorable test-bed system for spintronics research and discuss contributions of (Ga,Mn)As studies in the general context of the spin-dependent phenomena and device concepts. Special focus is on the spin-orbit coupling induced effects and the reviewed topics include the interaction of spin with electrical current, light, and heat. △ Less

Submitted 14 July, 2014; v1 submitted 7 October, 2013; originally announced October 2013.

Comments: 47 pages, 41 figures

Journal ref: Rev. Mod. Phys. 86, 855 (2014)

High Curie temperatures at low compensation in the ferromagnetic semiconductor (Ga,Mn)As

Authors: M. Wang, K. W. Edmonds, B. L. Gallagher, A. W. Rushforth, O. Makarovsky, A. Patanè, R. P. Campion, C. T. Foxon, V. Novak, T. Jungwirth

Abstract: We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical cond… ▽ More We investigate the relationship between the Curie temperature TC and the carrier density p in the ferromagnetic semiconductor (Ga,Mn)As. Carrier densities are extracted from analysis of the Hall resistance at low temperatures and high magnetic fields. Results are found to be consistent with ion channeling measurements when performed on the same samples. We find that both TC and the electrical conductivity increase monotonically with increasing p, and take their largest values when p is comparable to the concentration of substitutional Mn acceptors. This is inconsistent with models in which the Fermi level is located within a narrow isolated impurity band. △ Less

Submitted 11 March, 2013; originally announced March 2013.

Comments: 10 pages, 4 figures

Journal ref: Physical Review B 87, 121301 (2013)

Anisotropic Current-Controlled Magnetization Reversal in the Ferromagnetic Semiconductor (Ga,Mn)As

Authors: Yuanyuan Li, Y. F. Cao, G. N. Wei, Yanyong Li, Y. Ji, K. Y. Wang, K. W. Edmonds, R. P. Campion, A. W. Rushforth, C. T. Foxon, B. L. Gallagher

Abstract: Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the dir… ▽ More Electrical current manipulation of magnetization switching through spin-orbital coupling in ferromagnetic semiconductor (Ga,Mn)As Hall bar devices has been investigated. The efficiency of the current-controlled magnetization switching is found to be sensitive to the orientation of the current with respect to the crystalline axes. The dependence of the spin-orbit effective magnetic field on the direction and magnitude of the current is determined from the shifts in the magnetization switching angle. We find that the strain induced effective magnetic field is about three times as large as the Rashba induced magnetic field in our GaMnAs devices. △ Less

Submitted 8 March, 2013; originally announced March 2013.

Comments: 11 pages,3 figures, submitted to Appl. Phys. Lett

Journal ref: Applied Physics Letters 103, 022401 (2013)

Magnetostrictive thin films for microwave spintronics

Authors: D. E. Parkes, L. R. Shelford, P. Wadley, V. Holý, M. Wang, A. T. Hindmarch, G. van der Laan, R. P. Campion, K. W. Edmonds, S. A. Cavill, A. W. Rushforth

Abstract: Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded… ▽ More Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of single crystal thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make the single crystal thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications. △ Less

Submitted 20 February, 2013; originally announced February 2013.

Correspondence on "Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band" by M. Dobrowolska et al

Authors: K. W. Edmonds, B. L. Gallagher, M. Wang, A. W. Rushforth, O. Makarovsky, A. Patane, R. P. Campion, C. T. Foxon, V. Novak, T. Jungwirth

Abstract: Comment on the recent Nature Materials article by M. Dobrowolska et al., arXiv:1203.1852. We present experimental data showing that the Curie temperature and conductivity of high quality (Ga,Mn)As samples are maximized at low compensation, and thus the magnetic order in (Ga,Mn)As is not consistent with the isolated impurity band scenario. Comment on the recent Nature Materials article by M. Dobrowolska et al., arXiv:1203.1852. We present experimental data showing that the Curie temperature and conductivity of high quality (Ga,Mn)As samples are maximized at low compensation, and thus the magnetic order in (Ga,Mn)As is not consistent with the isolated impurity band scenario. △ Less

Submitted 16 November, 2012; originally announced November 2012.

Comments: 6 pages, 2 figures

Enhanced Inverse Spin-Hall Effect in Ultrathin Ferromagnetic/Normal Metal Bilayers

Authors: T. D. Skinner, H. Kurebayashi, D. Fang, D. Heiss, A. C. Irvine, A. T. Hindmarch, M. Wang, A. W. Rushforth, A. J. Ferguson

Abstract: We measure electrically detected ferromagnetic resonance in microdevices patterned from ultra-thin Co/Pt bilayers. Spin pumping and rectification voltages are observed and distinguished via their angular dependence. The spin-pumping voltage shows an unexpected increase as the cobalt thickness is reduced below 2 nm. This enhancement allows more efficient conversion of spin to charge current and mot… ▽ More We measure electrically detected ferromagnetic resonance in microdevices patterned from ultra-thin Co/Pt bilayers. Spin pumping and rectification voltages are observed and distinguished via their angular dependence. The spin-pumping voltage shows an unexpected increase as the cobalt thickness is reduced below 2 nm. This enhancement allows more efficient conversion of spin to charge current and motivates a theory modelling the dependence of impurity scattering on surface roughness. △ Less

Submitted 18 October, 2012; originally announced October 2012.

Journal ref: Appl. Phys. Lett. 102, 072401 (2013)

Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films

Authors: D. E. Parkes, S. A. Cavill, A. T. Hindmarch, P. Wadley, F. McGee, C. R. Staddon, K. W. Edmonds, R. P. Campion, B. L. Gallagher, A. W. Rushforth

Abstract: We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe81Ga19 film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the modification of the magnetic anisotropy by mechanical strain induced by a piezoelectric transducer attached to the layer. Epitaxial Fe81Ga19 is shown to possess… ▽ More We demonstrate reproducible voltage induced non-volatile switching of the magnetization in an epitaxial thin Fe81Ga19 film. Switching is induced at room temperature and without the aid of an external magnetic field. This is achieved by the modification of the magnetic anisotropy by mechanical strain induced by a piezoelectric transducer attached to the layer. Epitaxial Fe81Ga19 is shown to possess the favourable combination of cubic magnetic anisotropy and large magnetostriction necessary to achieve this functionality with experimentally accessible levels of strain. The switching of the magnetization proceeds by the motion of magnetic domain walls, also controlled by the voltage induced strain. △ Less

Submitted 17 August, 2012; originally announced August 2012.

Journal ref: Applied Physics Letters 101, 072402 (2012)

Piezoelectric strain induced variation of the magnetic anisotropy in a high Curie temperature (Ga,Mn)As sample

Authors: A. Casiraghi, A. W. Rushforth, J. Zemen, J. A. Haigh, M. Wang, K. W. Edmonds, R. P. Campion, B. L. Gallagher

Abstract: We show that effective electrical control of the magnetic properties in the ferromagnetic semiconductor (Ga,Mn)As is possible using the strain induced by a piezoelectric actuator even in the limit of high doping levels and high Curie temperatures, where direct electric gating is not possible. We demonstrate very large and reversible rotations of the magnetic easy axis. We compare the results obtai… ▽ More We show that effective electrical control of the magnetic properties in the ferromagnetic semiconductor (Ga,Mn)As is possible using the strain induced by a piezoelectric actuator even in the limit of high doping levels and high Curie temperatures, where direct electric gating is not possible. We demonstrate very large and reversible rotations of the magnetic easy axis. We compare the results obtained from magneto-transport and SQUID magnetometry measurements, extracting the dependence of the piezo-induced uniaxial magnetic anisotropy constant upon strain in both cases and detailing the limitations encountered in the latter approach. △ Less

Submitted 16 May, 2012; originally announced May 2012.

Analysing surface structures on (Ga,Mn)As by Atomic Force Microscopy

Authors: S. Piano, A. W. Rushforth, K. W. Edmonds, R. P. Campion, G. Adesso, B. L. Gallagher

Abstract: Using atomic force microscopy, we have studied the surface structures of high quality molecular beam epitaxy grown (Ga,Mn)As compound. Several samples with different thickness and Mn concentration, as well as a few (Ga,Mn)(As,P) samples have been investigated. All these samples have shown the presence of periodic ripples aligned along the $[1\bar{1}0]$ direction. From a detailed Fourier analysis w… ▽ More Using atomic force microscopy, we have studied the surface structures of high quality molecular beam epitaxy grown (Ga,Mn)As compound. Several samples with different thickness and Mn concentration, as well as a few (Ga,Mn)(As,P) samples have been investigated. All these samples have shown the presence of periodic ripples aligned along the $[1\bar{1}0]$ direction. From a detailed Fourier analysis we have estimated the period (~50 nm) and the amplitude of these structures. △ Less

Submitted 15 November, 2011; originally announced November 2011.

Comments: 5 pages, 2 figures, 2 tables. To appear in J. Nanosci. Nanotechnol. (special issue for the RTNSA conference 2011)

Journal ref: Journal of Nanoscience and Nanotechnology, Volume 12, Number 9, September 2012 , pp. 7545-7549(5)

Origin of in-plane uniaxial magnetic anisotropy in CoFeB amorphous ferromagnetic thin-films

Authors: A. T. Hindmarch, A. W. Rushforth, R. P. Campion, C. H. Marrows, B. L. Gallagher

Abstract: Describing the origin of uniaxial magnetic anisotropy (UMA) is generally problematic in systems other than single crystals. We demonstrate an in-plane UMA in amorphous CoFeB films on GaAs(001) which has the expected symmetry of the interface anisotropy in ferromagnetic films on GaAs(001), but strength which is independent of, rather than in inverse proportion to, the film thickness. We show that t… ▽ More Describing the origin of uniaxial magnetic anisotropy (UMA) is generally problematic in systems other than single crystals. We demonstrate an in-plane UMA in amorphous CoFeB films on GaAs(001) which has the expected symmetry of the interface anisotropy in ferromagnetic films on GaAs(001), but strength which is independent of, rather than in inverse proportion to, the film thickness. We show that this volume UMA is consistent with a bond-orientational anisotropy, which propagates the interface-induced UMA through the thickness of the amorphous film. It is explained how, in general, this mechanism may describe the origin of in-plane UMAs in amorphous ferromagnetic films. △ Less

Submitted 3 June, 2011; originally announced June 2011.

Comments: 4 pages, 4 figures

Tailoring the magnetism of GaMnAs films by ion irradiation

Authors: Lin Li, S. D. Yao, Shengqiang Zhou, D. Bürger, O. Roshchupkina, S. Akhmadaliev, A. W. Rushforth, R. P. Campion, J. Fassbender, M. Helm, B. L. Gallagher, C. Timm, H. Schmidt

Abstract: Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease… ▽ More Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The coercivity can be increased by more than three times. The magnetization, Curie temperature and the saturation field along the out-of-plane hard axis all decrease as the fluence increases. The electrical and structural characterization of the irradiated GaMnAs layers indicates that the controlled tailoring of magnetism results from a compensation of holes by generated electrical defects. △ Less

Submitted 7 December, 2010; originally announced December 2010.

Comments: 15 pages, 4 figures, accepted for publication at J. Phys. D

Surface morphology and magnetic anisotropy in (Ga,Mn)As

Authors: S. Piano, X. Marti, A. W. Rushforth, K. W. Edmonds, R. P. Campion, O. Caha, T. U. Schulli, V. Holy, B. L. Gallagher

Abstract: Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally ob… ▽ More Atomic Force Microscopy and Grazing incidence X-ray diffraction measurements have revealed the presence of ripples aligned along the $[1\bar{1}0]$ direction on the surface of (Ga,Mn)As layers grown on GaAs(001) substrates and buffer layers, with periodicity of about 50 nm in all samples that have been studied. These samples show the strong symmetry breaking uniaxial magnetic anisotropy normally observed in such materials. We observe a clear correlation between the amplitude of the surface ripples and the strength of the uniaxial magnetic anisotropy component suggesting that these ripples might be the source of such anisotropy. △ Less

Submitted 15 November, 2011; v1 submitted 1 October, 2010; originally announced October 2010.

Comments: 3 pages, 4 figures, 1 table. Replaced with published version

Journal ref: Appl. Phys. Lett. 98, 152503 (2011)

Microscopic analysis of the valence band and impurity band theories of (Ga,Mn)As

Authors: J. Masek, F. Maca, J. Kudrnovsky, O. Makarovsky, L. Eaves, R. P. Campion, K. W. Edmonds, A. W. Rushforth, C. T. Foxon, B. L. Gallagher, V. Novak, Jairo Sinova, T. Jungwirth

Abstract: We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of states near the Fermi energy which reside in an exchange-split sp-d hybridized valence band with dominant orbital character of the host semiconductor;… ▽ More We analyze microscopically the valence and impurity band models of ferromagnetic (Ga,Mn)As. We find that the tight-binding Anderson approach with conventional parameterization and the full potential LDA+U calculations give a very similar picture of states near the Fermi energy which reside in an exchange-split sp-d hybridized valence band with dominant orbital character of the host semiconductor; this microscopic spectral character is consistent with the physical premise of the k.p kinetic-exchange model. On the other hand, the various models with a band structure comprising an impurity band detached from the valence band assume mutually incompatible microscopic spectral character. By adapting the tight-binding Anderson calculations individually to each of the impurity band pictures in the single Mn impurity limit and then by exploring the entire doping range we find that a detached impurity band does not persist in any of these models in ferromagnetic (Ga,Mn)As. △ Less

Submitted 27 July, 2010; originally announced July 2010.

Comments: 29 pages, 25 figures

Manipulation of electrical and ferromagnetic properties of photo-sensitized (Ga,Mn)As

Authors: L. Herrera Diez, M. Konuma, E. Placidi, F. Arciprete, A. W. Rushforth, R. P. Campion, B. L. Gallagher, J. Honolka, K. Kern

Abstract: We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering of the Curie temperature with a corresponding increase in electrical resistance and a higher coercive field is found for the GaMnAs/fluorescein system with resp… ▽ More We present the manipulation of magnetic and electrical properties of (Ga,Mn)As by the adsorption of dye-molecules as a first step towards the realization of light-controlled magnetic-semiconductor/dye hybrid devices. A significant lowering of the Curie temperature with a corresponding increase in electrical resistance and a higher coercive field is found for the GaMnAs/fluorescein system with respect to (Ga,Mn)As. Upon exposure to visible light a shift in Curie temperature towards higher values and a reduction of the coercive field can be achieved in photo-sensitized (Ga,Mn)As. A mayor change in the XPS spectrum of (Ga,Mn)As indicates the appearance of occupied levels in the energy range corresponding to the (Ga,Mn)As valence band states upon adsorption of fluorescein. This points towards a hole quenching effect at the molecule-(Ga,Mn)As interface which is susceptible to light exposure. △ Less

Submitted 16 June, 2010; originally announced June 2010.

Comments: 4 pages, 4 figures

Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing

Authors: A. Casiraghi, A. W. Rushforth, M. Wang, N. R. S Farley, P. Wadley, J. L. Hall, C. R. Staddon, K. W. Edmonds, R. P. Campion, C. T. Foxon, B. L. Gallagher

Abstract: We have investigated the effects of post growth low temperature annealing on the magnetic, electrical and structural properties of (Ga_0.94,Mn_0.06)(As_0.9,P_0.1) layers grown by molecular beam epitaxy. By controlling the annealing time we are able to tune the magnetic anisotropy between an easy axis in the plane for the as-grown samples, to an easy axis perpendicular to the plane for fully anneal… ▽ More We have investigated the effects of post growth low temperature annealing on the magnetic, electrical and structural properties of (Ga_0.94,Mn_0.06)(As_0.9,P_0.1) layers grown by molecular beam epitaxy. By controlling the annealing time we are able to tune the magnetic anisotropy between an easy axis in the plane for the as-grown samples, to an easy axis perpendicular to the plane for fully annealed samples. The increase of the carrier density, as a result of annealing, is found to be the primary reason for the change in magnetic anisotropy, in qualitative agreement with theoretical predictions. △ Less

Submitted 14 June, 2010; originally announced June 2010.

Comments: 13 pages, 3 figures, submitted to Applied Physics Letters

Element-resolved orbital polarization in (III,Mn)As ferromagnetic semiconductors from $K$ edge x-ray magnetic circular dichroism

Authors: P. Wadley, A. A. Freeman, K. W. Edmonds, G. van der Laan, J. S. Chauhan, R. P. Campion, A. W. Rushforth, B. L. Gallagher, C. T. Foxon, F. Wilhelm, A. G. Smekhova, A. Rogalev

Abstract: Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the As K absorption edge consists of a single peak located on the low-energy side of the edge, which increases with the concentration of ferromagnetic Mn moments. The XMCD at the Mn K edge is mor… ▽ More Using x-ray magnetic circular dichroism (XMCD), we determine the element-specific character and polarization of unoccupied states near the Fermi level in (Ga,Mn)As and (In,Ga,Mn)As thin films. The XMCD at the As K absorption edge consists of a single peak located on the low-energy side of the edge, which increases with the concentration of ferromagnetic Mn moments. The XMCD at the Mn K edge is more detailed and is strongly concentration-dependent, which is interpreted as a signature of hole localization for low Mn doping. The results indicate a markedly different character of the polarized holes in low-doped insulating and high-doped metallic films, with a transfer of the hole orbital magnetic moment from Mn to As sites on crossing the metal-insulator transition. △ Less

Submitted 25 May, 2010; originally announced May 2010.

Comments: 5 figures, to be published in Physical Review B

Journal ref: Physical Review B 81, 235208 (2010)

Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

Authors: K. Y. Wang, K. W. Edmonds, A. C. Irvine, G. Tatara, E. De Ranieri, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, B. L. Gallagher

Abstract: Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be compar… ▽ More Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction. △ Less

Submitted 30 December, 2010; v1 submitted 6 May, 2010; originally announced May 2010.

Comments: 12 pages, 3 figures

Journal ref: APPLIED PHYSICS LETTERS 97, 262102 (2010)

Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning

Authors: K. Y. Wang, K. W. Edmonds, A. C. Irvine, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, B. L. Gallagher

Abstract: We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines i… ▽ More We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning. △ Less

Submitted 29 December, 2010; v1 submitted 15 January, 2010; originally announced January 2010.

Comments: 9 pages, 3 figures

Journal ref: J. Magn. Magn. Mater 322,3481(2010)

Exchange bias of a ferromagnetic semiconductor by a ferromagnetic metal

Authors: K. Olejnik, P. Wadley, J. A Haigh, K. W. Edmonds, R. P. Campion, A. W. Rushforth, B. L. Gallagher, C. T. Foxon, T. Jungwirth, J. Wunderlich, S. S. Dhesi, S. Cavill, G. van der Laan, E Arenholz

Abstract: We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange coupled (Ga,Mn)As interface layer in addition to the biassed bulk of the (Ga,Mn)As film. The interface layer remains polarized at room tempe… ▽ More We demonstrate an exchange bias in (Ga,Mn)As induced by antiferromagnetic coupling to a thin overlayer of Fe. Bias fields of up to 240 Oe are observed. Using element-specific x-ray magnetic circular dichroism measurements, we distinguish a strongly exchange coupled (Ga,Mn)As interface layer in addition to the biassed bulk of the (Ga,Mn)As film. The interface layer remains polarized at room temperature. △ Less

Submitted 14 January, 2010; originally announced January 2010.

Comments: 3 figures, submitted to Physical Review B

Journal ref: Phys. Rev. B 81, 104402 (2010)

A low field technique for measuring magnetic and magneto-resistance anisotropy coefficients applied to (Ga,Mn)As

Authors: J A Haigh, A W Rushforth, C S King, K W Edmonds, R P Campion, C T Foxon, B L Gallagher

Abstract: We demonstrate a simple, low cost, magneto-transport method for rapidly characterizing the magnetic anisotropy and anisotropic magneto-resistance (AMR) of ferromagnetic devices with uniaxial magnetic anisotropy. This transport technique is the analogue of magnetic susceptibility measurements of bulk material but is applicable to very small samples with low total moment. The technique is used to… ▽ More We demonstrate a simple, low cost, magneto-transport method for rapidly characterizing the magnetic anisotropy and anisotropic magneto-resistance (AMR) of ferromagnetic devices with uniaxial magnetic anisotropy. This transport technique is the analogue of magnetic susceptibility measurements of bulk material but is applicable to very small samples with low total moment. The technique is used to characterize devices fabricated from the dilute magnetic semiconductor (Ga,Mn)As. The technique allows us to probe the behavior of the parameters close to the Curie temperature, in the limit of the applied magnetic field tending to zero. This avoids the complications arising from the presence of paramagnetism. △ Less

Submitted 27 August, 2009; originally announced August 2009.

Manipulation of the magnetic configuration of (Ga,Mn)As nanostructures

Authors: J. A. Haigh, M. Wang, A. W. Rushforth, E. Ahmad, K. W. Edmonds, R. P. Campion, C. T. Foxon, B. L. Gallagher

Abstract: We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the magnetic reversal takes place via a combination of coherent rotation and domain wall propagation with the domain wall positioned at the corner of the device at… ▽ More We have studied the magnetic reversal of L-shaped nanostructures fabricated from (Ga,Mn)As. The strain relaxation due to the lithographic patterning results in each arm having a uniaxial magnetic anisotropy. Our analysis confirms that the magnetic reversal takes place via a combination of coherent rotation and domain wall propagation with the domain wall positioned at the corner of the device at intermediate stages of the magnetic hysteresis loops. The domain wall energy can be extracted from our analysis. Such devices have found implementation in studies of current induced domain wall motion and have the potential for application as non-volatile memory elements. △ Less

Submitted 11 August, 2009; originally announced August 2009.

Journal ref: Applied Physics Letters 95, 062502 (2009)

Microscopic mechanism of the non-crystalline anisotropic magnetoresistance in (Ga,Mn)As

Authors: Karel Výborný, Jan Kucera, Jairo Sinova, A. W. Rushforth, B. L. Gallagher, T. Jungwirth

Abstract: Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. This fact allows to construct a simple analytical… ▽ More Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. This fact allows to construct a simple analytical model of the AMR consisting of two heavy-hole bands whose charge carriers are scattered on the impurity potential of the Mn atoms. The model predicts the correct sign of the AMR (resistivity parallel to magnetization is smaller than perpendicular to magnetization) and identifies its origin arising from the destructive interference between electric and magnetic part of the scattering potential of magnetic ionized Mn acceptors when the carriers move parallel to the magnetization. △ Less

Submitted 17 June, 2009; originally announced June 2009.

Comments: 9 pages, 3 figs, subm to PRB

Journal ref: Phys Rev B 80, 165204 (2009)

Achieving High Curie Temperature in (Ga,Mn)As

Authors: M Wang, R P Campion, A W Rushforth, K W Edmonds, C T Foxon, B L Gallagher

Abstract: We study the effects of growth temperature, Ga:As ratio and post-growth annealing procedure on the Curie temperature, Tc, of (Ga,Mn)As layers grown by molecular beam epitaxy. We achieve the highest Tc values for growth temperatures very close to the 2D-3D phase boundary. The increase in Tc, due to the removal of interstitial Mn by post growth annealing, is counteracted by a second process which… ▽ More We study the effects of growth temperature, Ga:As ratio and post-growth annealing procedure on the Curie temperature, Tc, of (Ga,Mn)As layers grown by molecular beam epitaxy. We achieve the highest Tc values for growth temperatures very close to the 2D-3D phase boundary. The increase in Tc, due to the removal of interstitial Mn by post growth annealing, is counteracted by a second process which reduces Tc and which is more effective at higher annealing temperatures. Our results show that it is necessary to optimize the growth parameters and post growth annealing procedure to obtain the highest Tc. △ Less

Submitted 11 August, 2008; originally announced August 2008.

Journal ref: Appl.Phys.Lett. 93, 132103 (2008)

Molecular Beam Epitaxy grown (Ga,Mn)(As,P) with perpendicular to plane magnetic easy axis

Authors: A W Rushforth, M Wang, N R S Farley, R C Campion, K W Edmonds, C R Staddon, C T Foxon, B L Gallagher

Abstract: We present an experimental investigation of the magnetic, electrical and structural properties of Ga0.94Mn0.06As1-yPy layers grown by molecular beam epitaxy on GaAs substrates for y less than or equal to 0.3. X-ray diffraction measurements reveal that the layers are under tensile strain which gives rise to a magnetic easy axis perpendicular to the plane of the layers. The strength of the magneti… ▽ More We present an experimental investigation of the magnetic, electrical and structural properties of Ga0.94Mn0.06As1-yPy layers grown by molecular beam epitaxy on GaAs substrates for y less than or equal to 0.3. X-ray diffraction measurements reveal that the layers are under tensile strain which gives rise to a magnetic easy axis perpendicular to the plane of the layers. The strength of the magnetic anisotropy and the coercive field increase as the phosphorous concentration is increased. The resistivity of all samples shows metallic behaviour with the resistivity increasing as y increases. These materials will be useful for studies of micromagnetic phenomena requiring metallic ferromagnetic material with perpendicular magnetic anisotropy. △ Less

Submitted 9 July, 2008; originally announced July 2008.

Journal ref: JOURNAL OF APPLIED PHYSICS 104, 073908 (2008)

Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning

Authors: K Y Wang, A C Irvine, J Wunderlich, K W Edmonds, A W Rushforth, R P Campion, C T Foxon, D A Williams, B L Gallagher

Abstract: We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110] and [1-10] crystallographic axes are studied. The [110] device shows larger coercive field than the [1-10] device. Strong anisotropy is observed during magneti… ▽ More We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110] and [1-10] crystallographic axes are studied. The [110] device shows larger coercive field than the [1-10] device. Strong anisotropy is observed during magnetic reversal between [110] and [1-10] directions. A power law dependence is found for both devices between the critical current (JC) and the magnetization (M), with J_C is proportional to M^2.6. The domain wall motion is strongly influenced by the presence of local pinning centres. △ Less

Submitted 26 May, 2008; originally announced May 2008.

Comments: 12 pages, 12 figures, submitted to New Journal of Physics