Showing 1–31 of 31 results for author: Williams, D A

Probing the dark exciton states of a single quantum dot using photocurrent spectroscopy in magnetic fields

Authors: Kai Peng, Shiyao Wu, Jing Tang, Feilong Song, Chenjiang Qian, Sibai Sun, Shan Xiao, Meng Wang, Ali Hassan, David A. Williams, Xiulai Xu

Abstract: We report on high-resolution photoluminescence (PL) and photocurrent (PC) spectroscopies of a single self-assembled InAs/GaAs quantum dot (QD) embedded in an n-i-Schottky device with an applied magnetic field in Faraday and Voigt geometries. The single-QD PC spectrum of neutral exciton (X$^0$) is obtained by sweeping the bias-dependent X$^0$ transition energy to achieve resonance with a fixed narr… ▽ More We report on high-resolution photoluminescence (PL) and photocurrent (PC) spectroscopies of a single self-assembled InAs/GaAs quantum dot (QD) embedded in an n-i-Schottky device with an applied magnetic field in Faraday and Voigt geometries. The single-QD PC spectrum of neutral exciton (X$^0$) is obtained by sweeping the bias-dependent X$^0$ transition energy to achieve resonance with a fixed narrow-bandwidth laser through quantum-confined Stark effect. With a magnetic field applied in Faraday geometry, the diamagnetic effect and the Zeeman splitting of X$^0$ are observed both in PL and PC spectra. When the magnetic field is applied in Voigt geometry, the mixture of bright and dark states results in an observation of dark exciton states, which are confirmed by the polarization-resolved PL and PC spectra. △ Less

Submitted 17 December, 2017; originally announced December 2017.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. Applied 8,064018 (2017)

Observation of coupling between zero- and two-dimensional semiconductor systems based on anomalous diamagnetic effects

Authors: Shuo Cao, Jing Tang, Yue Sun, Kai Peng, Yunan Gao, Yanhui Zhao, Chenjiang Qian, Sibai Sun, Hassan Ali, Yuting Shao, Shiyao Wu, Feilong Song, David A. Williams, Weidong Sheng, Kuijuan Jin, Xiulai Xu

Abstract: We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one ord… ▽ More We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one order of magnitude larger than that of the exciton states confined in the quantum dots. Recombination of electrons with holes in a quantum dot of the coupled system leads to an unusual negative diamagnetic effect, which is five times stronger than that in a pure quantum dot system. This effect can be attributed to the expansion of the wavefunction of remaining electrons in the wetting layer or the spread of electrons in the excited states of the quantum dot to the wetting layer after recombination. In this case, the wavefunction extent of the final states in the quantum dot plane is much larger than that of the initial states because of the absence of holes in the quantum dot to attract electrons. The properties of emitted photons that depend on the large electron wavefunction extents in the wetting layer indicate that the coupling occurs between systems of different dimensionality, which is also verified from the results obtained by applying a magnetic field in different configurations. This study paves a new way to observe hybrid states with zero- and two-dimensional structures, which could be useful for investigating the Kondo physics and implementing spin-based solid-state quantum information processing. △ Less

Submitted 7 December, 2015; originally announced December 2015.

Comments: 20 pages, 7 figures in Nano Research, 2015

Longitudinal wave function control in single quantum dots with an applied magnetic field

Authors: Shuo Cao, Jing Tang, Yunan Gao, Yue Sun, Kangsheng Qiu, Yanhui Zhao, Min He, Jin-An Shi, Lin Gu, David A. Williams, Weidong Sheng, Kuijuan Jin, Xiulai Xu

Abstract: Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of p… ▽ More Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots. △ Less

Submitted 29 January, 2015; originally announced January 2015.

Comments: 19 pages,3 figures

Journal ref: Scientific Reports, 5, 8041 (2015)

Charge state control in single InAs/GaAs quantum dots by external electric and magnetic fields

Authors: Jing Tang, Shuo Cao, Yunan Gao, Yue Sun, Weidong Geng, David A. Williams, Kuijuan Jin, Xiulai Xu

Abstract: We report a photoluminescence (PL) spectroscopy study of charge state control in single self-assembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2 K. Neutral and charged exciton complexes were observed under applied bias voltages from -0.5 V to 0.5 V by controlling the carrier tunneling. The highly negatively charged exciton emission becomes stronger with increasing p… ▽ More We report a photoluminescence (PL) spectroscopy study of charge state control in single self-assembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2 K. Neutral and charged exciton complexes were observed under applied bias voltages from -0.5 V to 0.5 V by controlling the carrier tunneling. The highly negatively charged exciton emission becomes stronger with increasing pumping power, arising from the fact that electrons have a smaller effective mass than holes and are more easily captured by the quantum dots. The integrated PL intensity of negatively charged excitons is affected significantly by a magnetic field applied along the sample growth axis. This observation is explained by a reduction in the electron drift velocity caused by an applied magnetic field, which increases the probability of non-resonantly excited electrons being trapped by localized potentials at the wetting layer interface, and results in fewer electrons distributed in the quantum dots. The hole drift velocity is also affected by the magnetic field, but it is much weaker. △ Less

Submitted 30 July, 2014; originally announced July 2014.

Comments: 14 pages, 4 figures

Journal ref: Appl. Phys. Lett. 105, 041109 (2014)

GHz photon-activated hopping between localized states in a silicon quantum dot

Authors: T. Ferrus, A. Rossi, A. Andreev, T. Kodera, T. Kambara, W. Lin, S. Oda, D. A. Williams

Abstract: We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to… ▽ More We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to optically control and operate electrically isolated structures by microwave pulses. In quantum computing architectures, these results may lead to the use of microwave multiplexing to manipulate quantum states in a multi-qubit configuration. △ Less

Submitted 19 December, 2013; originally announced December 2013.

Comments: New Journal of Physics, in press

Spin and Orbital Splitting in Ferromagnetic Contacted Single Wall Carbon Nanotube Devices

Authors: K. Y. Wang, A. M. Blackburn, H. F. Wang, J. Wunderlich, D. A. Williams

Abstract: We observed the coulomb blockade phenomena in ferromagnetic contacting single wall semiconducting carbon nanotube devices. No obvious Coulomb peaks shift was observed with existing only the Zeeman splitting at 4K. Combining with other effects, the ferromagnetic leads prevent the orbital spin states splitting with magnetic field up to 2 Tesla at 4K. With increasing magnetic field further, both posi… ▽ More We observed the coulomb blockade phenomena in ferromagnetic contacting single wall semiconducting carbon nanotube devices. No obvious Coulomb peaks shift was observed with existing only the Zeeman splitting at 4K. Combining with other effects, the ferromagnetic leads prevent the orbital spin states splitting with magnetic field up to 2 Tesla at 4K. With increasing magnetic field further, both positive or negative coulomb peaks shift slopes are observed associating with clockwise and anticlockwise orbital state splitting. The strongly suppressed/enhanced of the conductance has been observed associating with the magnetic field induced orbital states splitting/converging. △ Less

Submitted 6 March, 2013; originally announced March 2013.

Journal ref: APPLIED PHYSICS LETTERS 102, 093508 (2013)

Electron temperature in electrically isolated Si double quantum dots

Authors: A. Rossi, T. Ferrus, D. A. Williams

Abstract: Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate… ▽ More Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. △ Less

Submitted 22 February, 2012; v1 submitted 14 December, 2011; originally announced December 2011.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 100, 133503 (2012)

Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

Authors: T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, S. Oda

Abstract: We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow… ▽ More We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed. △ Less

Submitted 25 April, 2012; v1 submitted 22 September, 2011; originally announced September 2011.

Comments: 15 pages

Journal ref: AIP Advances 2, 2, 022114 (2012)

Voltage-controlled electron tunnelling from a single self-assembled quantum dot embedded in a two-dimensional-electron-gas-based photovoltaic cell

Authors: J. D. Mar, X. L. Xu, J. J. Baumberg, A. C. Irvine, C. Stanley, D. A. Williams

Abstract: We perform high-resolution photocurrent (PC) spectroscopy to investigate resonantly the neutral exciton ground-state (X0) in a single InAs/GaAs self-assembled quantum dot (QD) embedded in the intrinsic region of an n-i-Schottky photodiode based on a two-dimensional electron gas (2DEG), which was formed from a Si delta-doped GaAs layer. Using such a device, a single-QD PC spectrum of X0 is measured… ▽ More We perform high-resolution photocurrent (PC) spectroscopy to investigate resonantly the neutral exciton ground-state (X0) in a single InAs/GaAs self-assembled quantum dot (QD) embedded in the intrinsic region of an n-i-Schottky photodiode based on a two-dimensional electron gas (2DEG), which was formed from a Si delta-doped GaAs layer. Using such a device, a single-QD PC spectrum of X0 is measured by sweeping the bias-dependent X0 transition energy through that of a fixed narrow-bandwidth laser via the quantum-confined Stark effect (QCSE). By repeating such a measurement for a series of laser energies, a precise relationship between the X0 transition energy and bias voltage is then obtained. Taking into account power broadening of the X0 absorption peak, this allows for high-resolution measurements of the X0 homogeneous linewidth and, hence, the electron tunnelling rate. The electron tunnelling rate is measured as a function of the vertical electric field and described accurately by a theoretical model, yielding information about the electron confinement energy and QD height. We demonstrate that our devices can operate as 2DEG-based QD photovoltaic cells and conclude by proposing two optical spintronic devices that are now feasible. △ Less

Submitted 7 June, 2011; originally announced June 2011.

Comments: 34 pages, 11 figures

Detection of variable tunneling rates in silicon quantum dots

Authors: A. Rossi, T. Ferrus, W. Lin, T. Kodera, D. A. Williams, S. Oda

Abstract: Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that th… ▽ More Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that this architecture can be operated to reveal asymmetries in the transport characteristic of the QD. Indeed, the observation of gate voltage shifts in the detector's response as the QD bias is changed is an indication of variable tunneling rates. △ Less

Submitted 14 February, 2011; originally announced February 2011.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 98, 133506 (2011)

Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field

Authors: Xiulai Xu, Andrew C. Irvine, Yang Yang, Xitian Zhang, David A. Williams

Abstract: We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase of oscillati… ▽ More We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase of oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wavefunction modification in the quantum dots. △ Less

Submitted 5 November, 2010; v1 submitted 22 October, 2010; originally announced October 2010.

Comments: 16 pages, 6 figures

Journal ref: Physical Review B 82, 195309 (2010)

Charge Detection in Phosphorus-doped Silicon Double Quantum Dots

Authors: A. Rossi, T. Ferrus, G. J. Podd, D. A. Williams

Abstract: We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD. Measurements performed at 4.2K show step-like behaviour and shifts of the Coulomb Blockade oscillations in the detector's current as the reservoir's potential… ▽ More We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD. Measurements performed at 4.2K show step-like behaviour and shifts of the Coulomb Blockade oscillations in the detector's current as the reservoir's potential is swept. By means of a classical capacitance model, we demonstrate that the observed features can be used to detect single-electron tunnelling from, to and within the DQD, as well as to reveal the DQD charge occupancy. △ Less

Submitted 9 August, 2010; originally announced August 2010.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 97, 223506 (2010)

Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

Authors: K. Y. Wang, K. W. Edmonds, A. C. Irvine, G. Tatara, E. De Ranieri, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, B. L. Gallagher

Abstract: Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be compar… ▽ More Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction. △ Less

Submitted 30 December, 2010; v1 submitted 6 May, 2010; originally announced May 2010.

Comments: 12 pages, 3 figures

Journal ref: APPLIED PHYSICS LETTERS 97, 262102 (2010)

Highly sensitive, photon number resolving detectors mediated by phonons using $δ$-doped GaAs transistors

Authors: Xiulai Xu, Hugh Baker, David A. Williams

Abstract: We report a photon number resolving detector using two-dimensional electron gas (2DEG) based transistors. When the photon pulses impinge on the absorption region, the generated phonons dissipate ballistically in the 2DEG toward the trench isolated nanowire transistors near the surface. The phonon-electron interaction induces a positive conductance in the transistors, resulting in a current increas… ▽ More We report a photon number resolving detector using two-dimensional electron gas (2DEG) based transistors. When the photon pulses impinge on the absorption region, the generated phonons dissipate ballistically in the 2DEG toward the trench isolated nanowire transistors near the surface. The phonon-electron interaction induces a positive conductance in the transistors, resulting in a current increase. With this principle, we obtain an internal quantum efficiency for this type of detector of up to 85%. △ Less

Submitted 3 May, 2010; originally announced May 2010.

Comments: 15 pages, 5 figures

Journal ref: Nano Lett., 2010, 10 (4), pp 1364-1368

Strongly coupled single quantum dot in a photonic crystal waveguide cavity

Authors: F. S. F. Brossard, X. L. Xu, D. A. Williams, M. Hadjipanayi, M. Hopkinson, X. Wang, R. A. Taylor

Abstract: Cavities embedded in photonic crystal waveguides offer a promising route towards large scale integration of coupled resonators for quantum electrodynamics applications. In this letter, we demonstrate a strongly coupled system formed by a single quantum dot and such a photonic crystal cavity. The resonance originating from the cavity is clearly identified from the photoluminescence mapping of the o… ▽ More Cavities embedded in photonic crystal waveguides offer a promising route towards large scale integration of coupled resonators for quantum electrodynamics applications. In this letter, we demonstrate a strongly coupled system formed by a single quantum dot and such a photonic crystal cavity. The resonance originating from the cavity is clearly identified from the photoluminescence mapping of the out-of-plane scattered signal along the photonic crystal waveguide. The quantum dot exciton is tuned towards the cavity mode by temperature control. A vacuum Rabi splitting of ~ 140 \mueV is observed at resonance. △ Less

Submitted 26 March, 2010; originally announced March 2010.

Comments: 11 pages, 3 figures

Charge Sensing in Intrinsic Silicon Quantum Dots

Authors: G. J. Podd, S. J. Angus, D. A. Williams, A. J. Ferguson

Abstract: We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many e… ▽ More We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many electron regime, where we can count in excess of 20 charge additions onto the quantum dot. △ Less

Submitted 11 February, 2010; originally announced February 2010.

Comments: To be published in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 96, 082104 (2010)

Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning

Authors: K. Y. Wang, K. W. Edmonds, A. C. Irvine, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, B. L. Gallagher

Abstract: We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines i… ▽ More We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning. △ Less

Submitted 29 December, 2010; v1 submitted 15 January, 2010; originally announced January 2010.

Comments: 9 pages, 3 figures

Journal ref: J. Magn. Magn. Mater 322,3481(2010)

Detection of charge motion in a non-metallic silicon isolated double quantum dot

Authors: T. Ferrus, A. Rossi, M. Tanner, G. Podd, P. Chapman, D. A. Williams

Abstract: As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here we have investigated the mechanism behind the detection of electron motion… ▽ More As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here we have investigated the mechanism behind the detection of electron motion inside an electrically isolated double quantum dot that is capacitively coupled to a single electron transistor, both fabricated from highly phosphorous doped silicon wafers. Despite, the absence of a direct charge transfer between the detector and the double dot structure, an efficient detection is obtained. In particular, unusually large Coulomb peak shifts in gate voltage are observed. Results are explained in terms of charge rearrangement and the presence of inelastic cotunneling via states at the periphery of the single electron transistor dot. △ Less

Submitted 14 October, 2011; v1 submitted 15 July, 2009; originally announced July 2009.

Journal ref: New J. Phys. 13, 10, 103012 (2011)

Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

Authors: T. Ferrus, D. G. Hasko, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, G. A. D. Briggs

Abstract: We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosp… ▽ More We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosphorous-doped single-electron transistor. A single-shot technique is successfully implemented and used to observe the real time decay of a quantum state. A discussion on various measurement strategies is presented and the consequences on electron heating and noise are analysed. △ Less

Submitted 2 June, 2010; v1 submitted 21 April, 2009; originally announced April 2009.

Comments: 18 pages, 6 figures, published in J. Appl. Phys

Journal ref: J. Appl. Phys. 106, 033705 (2009)

Single shot measurement of a silicon single electron transistor

Authors: D. G. Hasko, T. Ferrus, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, G. A. D. Briggs

Abstract: We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pu… ▽ More We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pulse. Relaxation times up to 90 us are observed, suggesting the presence of well isolated electron excitations within the device. It is expected that these are associated with long decoherence time and the device may be suitable for quantum information processing. △ Less

Submitted 21 November, 2008; v1 submitted 5 November, 2008; originally announced November 2008.

Journal ref: Appl. Phys. Lett. 93, 19, 192116 (2008)

Magneto-optical and micromagnetic simulation study the current driven domain wall motion in ferromagnetic (Ga,Mn)As

Authors: K. Y. Wang, A. C. Irvine, R. P. Campion, C. T. Foxon, J. Wunderlich, D. A. Williams, B. L. Gallagher

Abstract: We have studied current-driven domain wall motion in modified Ga_0.95Mn_0.05As Hall bar structures with perpendicular anisotropy by using spatially resolved Polar Magneto-Optical Kerr Effect Microscopy and micromagnetic simulation. Regardless of the initial magnetic configuration, the domain wall propagates in the opposite direction to the current with critical current of 1~2x10^5A/cm^2. Conside… ▽ More We have studied current-driven domain wall motion in modified Ga_0.95Mn_0.05As Hall bar structures with perpendicular anisotropy by using spatially resolved Polar Magneto-Optical Kerr Effect Microscopy and micromagnetic simulation. Regardless of the initial magnetic configuration, the domain wall propagates in the opposite direction to the current with critical current of 1~2x10^5A/cm^2. Considering the spin transfer torque term as well as various effective magnetic field terms, the micromagnetic simulation results are consistent with the experimental results. Our simulated and experimental results suggest that the spin-torque rather than Oersted field is the reason for current driven domain wall motion in this material. △ Less

Submitted 28 May, 2008; originally announced May 2008.

Comments: 10 pages, 3 figures, to be published in J. Magn. Magn. Mater

Magnetic reversal under external field and current-driven domain wall motion in (Ga,Mn)As: influence of extrinsic pinning

Authors: K Y Wang, A C Irvine, J Wunderlich, K W Edmonds, A W Rushforth, R P Campion, C T Foxon, D A Williams, B L Gallagher

Abstract: We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110] and [1-10] crystallographic axes are studied. The [110] device shows larger coercive field than the [1-10] device. Strong anisotropy is observed during magneti… ▽ More We investigate the anisotropy of magnetic reversal and current-driven domain wall motion in annealed Ga_0.95Mn_0.05As thin films and Hall bar devices with perpendicular magnetic anisotropy. Hall bars with current direction along the [110] and [1-10] crystallographic axes are studied. The [110] device shows larger coercive field than the [1-10] device. Strong anisotropy is observed during magnetic reversal between [110] and [1-10] directions. A power law dependence is found for both devices between the critical current (JC) and the magnetization (M), with J_C is proportional to M^2.6. The domain wall motion is strongly influenced by the presence of local pinning centres. △ Less

Submitted 26 May, 2008; originally announced May 2008.

Comments: 12 pages, 12 figures, submitted to New Journal of Physics

Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

Authors: A. D. Giddings, O. N. Makarovsky, M. N. Khalid, S. Yasin, K. W. Edmonds, R. P. Campion, J. Wunderlich, T. Jungwirth, D. A. Williams, B. L. Gallagher, C. T. Foxon

Abstract: We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theor… ▽ More We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theories for enhanced AMR ferromagnetic semiconductor nanoscale devices, particularly with regard to the dependence on the magnetotransport of the bulk material. We conclude that our results are most consistent with the Coulomb blockade AMR mechanism. △ Less

Submitted 1 July, 2008; v1 submitted 24 March, 2008; originally announced March 2008.

Comments: 10 pages, 5 figures

Journal ref: New J. Phys. 10, 085004 (2008)

Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlOx/Pt structures

Authors: B. G. Park, J. Wunderlich, D. A. Williams, S. J. Joo, K. Y. Jung, K. H. Shin, K. Olejnik, A. B. Shick, T. Jungwirth

Abstract: We report observations of tunneling anisotropic magnetoresitance (TAMR) in vertical tunnel devices with a ferromagnetic multilayer-(Co/Pt) electrode and a non-magnetic Pt counter-electrode separated by an AlOx barrier. In stacks with the ferromagnetic electrode terminated by a Co film the TAMR magnitude saturates at 0.15% beyond which it shows only weak dependence on the magnetic field strength,… ▽ More We report observations of tunneling anisotropic magnetoresitance (TAMR) in vertical tunnel devices with a ferromagnetic multilayer-(Co/Pt) electrode and a non-magnetic Pt counter-electrode separated by an AlOx barrier. In stacks with the ferromagnetic electrode terminated by a Co film the TAMR magnitude saturates at 0.15% beyond which it shows only weak dependence on the magnetic field strength, bias voltage, and temperature. For ferromagnetic electrodes terminated by two monolayers of Pt we observe order(s) of magnitude enhancement of the TAMR and a strong dependence on field, temperature and bias. Discussion of experiments is based on relativistic ab initio calculations of magnetization orientation dependent densities of states of Co and Co/Pt model systems. △ Less

Submitted 8 January, 2008; originally announced January 2008.

Comments: 4 pages, 5 figures, to be published in Phys. Rev. Lett

Singlet-Triplet Physics and Shell Filling in Carbon Nanotube Double Quantum Dots

Authors: H. Ingerslev Jørgensen, K. Grove-Rasmussen, K. -Y. Wang, A. M. Blackburn, K. Flensberg, P. E. Lindelof, D. A. Williams

Abstract: An artifcial two-atomic molecule, also called a double quantum dot (DQD), is an ideal system for exploring few electron physics. Spin-entanglement between just two electrons can be explored in such systems where singlet and triplet states are accessible. These two spin-states can be regarded as the two states in a quantum two-state system, a so-called singlet-triplet qubit. A very attractive mat… ▽ More An artifcial two-atomic molecule, also called a double quantum dot (DQD), is an ideal system for exploring few electron physics. Spin-entanglement between just two electrons can be explored in such systems where singlet and triplet states are accessible. These two spin-states can be regarded as the two states in a quantum two-state system, a so-called singlet-triplet qubit. A very attractive material for realizing spin based qubits is the carbon nanotube (CNT), because it is expected to have a very long spin coherence time. Here we show the existence of a gate-tunable singlet-triplet qubit in a CNT DQD. We show that the CNT DQD has clear shell structures of both four and eight electrons, with the singlet-triplet qubit present in the four-electron shells. We furthermore observe inelastic cotunneling via the singlet and triplet states, which we use to probe the splitting between singlet and triplet, in good agreement with theory. △ Less

Submitted 21 November, 2007; originally announced November 2007.

Comments: Supplement available at: http://www.fys.ku.dk/~hij/public/singlet-triple_supp.pdf

Journal ref: Nature Physics 4, 536 - 539 (2008)

Radio-frequency point-contact electrometer

Authors: Hua Qin, David A. Williams

Abstract: We fabricate and characterize a radio-frequency semiconductor point-contact electrometer (RF-PC) analogous to radio-frequency single-electron transistors [RF-SETs, see Science {\bf 280}, 1238 (1998)]. The point contact is formed by surface Schottky gates in a two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure. In the present setup, the PC is operating as a simple voltage-contr… ▽ More We fabricate and characterize a radio-frequency semiconductor point-contact electrometer (RF-PC) analogous to radio-frequency single-electron transistors [RF-SETs, see Science {\bf 280}, 1238 (1998)]. The point contact is formed by surface Schottky gates in a two-dimensional electron gas (2DEG) in an AlGaAs/GaAs heterostructure. In the present setup, the PC is operating as a simple voltage-controlled resistor rather than a quantum point contact (QPC) and demonstrates a charge-sensitivity about $2\times 10^{-1} \mathrm{e/\sqrt{Hz}}$ at a bandwidth of $30 \mathrm{kHz}$ without the use of a cryogenic RF preamplifier. Since the impedance of a typical point-contact device is much lower than the impedance of the typical SET, a semiconductor-based RF-PC, equipped with practical cryogenic RF preamplifiers, could realize an ultra-fast and ultra-sensitive electrometer. △ Less

Submitted 18 August, 2007; originally announced August 2007.

Comments: 11 pages, 3 figures. This article is identical to the version that appeared in Appl. Phys. Lett. 88, 203506 (2006). The published version can be found at http://apl.aip.org/

Magnetocrystalline anisotropy controlled local magnetic configurations in (Ga,Mn)As spin-transfer-torque microdevices

Authors: J. Wunderlich, A. C. Irvine, J. Zemen, V. Holy, A. W. Rushforth, E. De Ranieri, U. Rana, K. Vyborny, Jairo Sinova, C. T. Foxon, R. P. Campion, D. A. Williams, B. L. Gallagher, T. Jungwirth

Abstract: The large saturation magnetization in conventional dense moment ferromagnets offers flexible means of manipulating the ordered state through demagnetizing shape anisotropy fields but these dipolar fields, in turn, limit the integrability of magnetic elements in information storage devices. We show that in a (Ga,Mn)As dilute moment ferromagnet, with comparatively weaker magnetic dipole interactio… ▽ More The large saturation magnetization in conventional dense moment ferromagnets offers flexible means of manipulating the ordered state through demagnetizing shape anisotropy fields but these dipolar fields, in turn, limit the integrability of magnetic elements in information storage devices. We show that in a (Ga,Mn)As dilute moment ferromagnet, with comparatively weaker magnetic dipole interactions, locally tunable magnetocrystalline anisotropy can take the role of the internal field which determines the magnetic configuration. Experiments and theoretical modeling are presented for lithographically patterned microchannels and the phenomenon is attributed to lattice relaxations across the channels. The utility of locally controlled magnetic anisotropies is demonstrated in current induced switching experiments. We report structure sensitive, current induced in-plane magnetization switchings well below the Curie temperature at critical current densities 10^5 Acm^-2. The observed phenomenology shows signatures of a contribution from domain-wall spin-transfer-torque effects. △ Less

Submitted 23 July, 2007; originally announced July 2007.

Comments: 9 pages, 9 figures, Phys. Rev. B in press

Domain imaging and domain wall propagation in (Ga,Mn)As thin films with tensile strain

Authors: K. Y. Wang, A. W. Rushforth, V. A. Grant, R. P. Campion, K. W. Edmonds, C. R. Staddon, C. T. Foxon, B. L. Gallagher, J. Wunderlich, D. A. Williams

Abstract: We have performed spatially resolved Polar Magneto-Optical Kerr Effect Microscopy measurements on as-grown and annealed Ga0.95Mn0.05As thin films with tensile strain. We find that the films exhibit very strong perpendicular magnetic anisotropy which is increased upon annealing. During magnetic reversal, the domain walls propagate along the direction of surface ripples for the as-grown sample at… ▽ More We have performed spatially resolved Polar Magneto-Optical Kerr Effect Microscopy measurements on as-grown and annealed Ga0.95Mn0.05As thin films with tensile strain. We find that the films exhibit very strong perpendicular magnetic anisotropy which is increased upon annealing. During magnetic reversal, the domain walls propagate along the direction of surface ripples for the as-grown sample at low temperatures and along the [110] direction for the annealed sample. This indicates that the magnetic domain pattern during reversal is determined by a combination of magnetocrystalline anisotropy and a distribution of pinning sites along the surface ripples that can be altered by annealing. These mechanisms could lead to an effective method of controlling domain wall propagation. △ Less

Submitted 3 May, 2007; originally announced May 2007.

Comments: 8 pages, 3 figures. to appear in Journal of Applied Physics

Coulomb blockade anisotropic magnetoresistance: Singleelectronics meets spintronics

Authors: J. Wunderlich, T. Jungwirth, B. Kaestner, A. C. Irvine, K. Wang, N. Stone, U. Rana, A. D. Giddings, A. B. Shick, C. T. Foxon, R. P. Campion, D. A. Williams, B. L Gallagher

Abstract: Single-electronics and spintronics are among the most intensively investigated potential complements or alternatives to CMOS electronics. Single-electronics, which is based on the discrete charge of the electron, is the ultimate in miniaturization and electro-sensitivity. Spintronics, which is based on manipulating electron spins,delivers high magneto-sensitivity and non-volatile memory effects.… ▽ More Single-electronics and spintronics are among the most intensively investigated potential complements or alternatives to CMOS electronics. Single-electronics, which is based on the discrete charge of the electron, is the ultimate in miniaturization and electro-sensitivity. Spintronics, which is based on manipulating electron spins,delivers high magneto-sensitivity and non-volatile memory effects. So far, major developments in the two fields have followed independent paths with only a few experimental studies of hybrid single-electronic/spintronic devices. Intriguing new effects have been discovered in such devices but these have not, until now, offered the possibility of useful new functionalities. Here we demonstrate a device which shows a new physical effect, Coulomb blockade anisotropic magnetoresistance, and which offers a route to non-volatile, low-field, and highly electro- and magneto-sensitive operation. Since this new phenomenon reflects the magnetization orientation dependence of the classical single-electron charging energy it does not impose constraints on the operational temperature associated with more subtle quantum effects, such as resonant or spin-coherent tunneling. △ Less

Submitted 26 February, 2006; originally announced February 2006.

Charge-qubit operation of an isolated double quantum dot

Authors: J. Gorman, D. G. Hasko, D. A. Williams

Abstract: We have investigated coherent time evolution of pseudo-molecular states of an isolated (leadless) silicon double quantum-dot, where operations are carried out via capacitively-coupled elements. Manipulation is performed by short pulses applied to a nearby gate, and measurement is performed by a single-electron transistor. The electrical isolation of this qubit results in a significantly longer c… ▽ More We have investigated coherent time evolution of pseudo-molecular states of an isolated (leadless) silicon double quantum-dot, where operations are carried out via capacitively-coupled elements. Manipulation is performed by short pulses applied to a nearby gate, and measurement is performed by a single-electron transistor. The electrical isolation of this qubit results in a significantly longer coherence time than previous reports for semiconductor charge qubits realized in artificial molecules. △ Less

Submitted 2 August, 2005; v1 submitted 18 April, 2005; originally announced April 2005.

Comments: 4 journal pages, 4 figures, Letter

Design of quasi-lateral p-n junction for optical spin-detection in low-dimensional systems

Authors: B. Kaestner, D. G. Hasko, D. A. Williams

Abstract: A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems. A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems. △ Less

Submitted 5 November, 2004; originally announced November 2004.

Comments: Extract from PhD dissertation, 18 pages, 9 figures

Journal ref: B. Kaestner, "Planar-Geometry Light Emitting Diode: Optical Approach for Spin Detection in Low-Dimensional Systems", Dissertation published for the University of Cambridge, 2003