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Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift
Authors:
K. Takeda,
J. Yoneda,
T. Otsuka,
T. Nakajima,
M. R. Delbecq,
G. Allison,
Y. Hoshi,
N. Usami,
K. M. Itoh,
S. Oda,
T. Kodera,
S. Tarucha
Abstract:
Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of…
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Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of Si/SiGe spin qubits can be limited by the microwave-induced frequency shift of electric dipole spin resonance and it can be improved by optimization of control pulses. As we increase the control microwave amplitude, we observe a shift of the qubit resonance frequency, in addition to the increasing Rabi frequency. We reveal that this limits control fidelity with a conventional amplitude-modulated microwave pulse below 99.8%. In order to achieve a gate fidelity > 99.9%, we introduce a quadrature control method, and validate this approach experimentally by randomized benchmarking. Our finding facilitates realization of an ultra-high fidelity qubit with electron spins in quantum dots.
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Submitted 29 October, 2018;
originally announced October 2018.
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A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
Authors:
J. Yoneda,
K. Takeda,
T. Otsuka,
T. Nakajima,
M. R. Delbecq,
G. Allison,
T. Honda,
T. Kodera,
S. Oda,
Y. Hoshi,
N. Usami,
K. M. Itoh,
S. Tarucha
Abstract:
Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile, addressable single-spin and spin-spin manipulations in multiple-qubit systems will necessitate sizable spin-electric coupling. Given background charge fluctuation…
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Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile, addressable single-spin and spin-spin manipulations in multiple-qubit systems will necessitate sizable spin-electric coupling. Given background charge fluctuation in nanostructures, however, its compatibility with enhanced coherence should be crucially questioned. Here we realise a single-electron spin qubit with isotopically-enriched phase coherence time (20 microseconds) and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge (instead of conventional magnetic) noise featured by a 1/f spectrum over seven decades of frequency. The qubit nevertheless exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average. Our work strongly suggests that designing artificial spin-electric coupling with account taken of charge noise is a promising route to large-scale spin-qubit systems having fault-tolerant controllability.
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Submitted 4 August, 2017;
originally announced August 2017.
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A fault-tolerant addressable spin qubit in a natural silicon quantum dot
Authors:
K. Takeda,
J. Kamioka,
T. Otsuka,
J. Yoneda,
T. Nakajima,
M. R. Delbecq,
S. Amaha,
G. Allison,
T. Kodera,
S. Oda,
S. Tarucha
Abstract:
Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubits, but not in industry standard natural (unpurified) silicon. Here we demonstrate an addressable fault-tolerant qubit using a natural silicon double q…
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Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubits, but not in industry standard natural (unpurified) silicon. Here we demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet optimally designed for fast spin control. This optimized design allows us to achieve the optimum Rabi oscillation quality factor Q = 140 at a Rabi frequency of 10 MHz in the frequency range two orders of magnitude higher than that achieved in previous studies. This leads to a qubit fidelity of 99.6 %, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum-dot-based qubits. This result can inspire contributions from the industrial and quantum computing communities.
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Submitted 25 February, 2016;
originally announced February 2016.
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GHz photon-activated hopping between localized states in a silicon quantum dot
Authors:
T. Ferrus,
A. Rossi,
A. Andreev,
T. Kodera,
T. Kambara,
W. Lin,
S. Oda,
D. A. Williams
Abstract:
We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to…
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We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to optically control and operate electrically isolated structures by microwave pulses. In quantum computing architectures, these results may lead to the use of microwave multiplexing to manipulate quantum states in a multi-qubit configuration.
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Submitted 19 December, 2013;
originally announced December 2013.
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Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer
Authors:
T. Obata,
K. Takeda,
J. Kamioka,
T. Kodera,
W. M. Akhtar,
K. Sawano,
S. Oda,
Y. Shiraki,
S. Tarucha
Abstract:
We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signa…
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We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant.
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Submitted 12 November, 2013;
originally announced November 2013.
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Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots
Authors:
K. Takeda,
T. Obata,
Y. Fukuoka,
W. M. Akhtar,
J. Kamioka,
T. Kodera,
S. Oda,
S. Tarucha
Abstract:
We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negativ…
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We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negative, and the 1/f2 noise becomes rapidly suppressed in a homogeneous background 1/f noise. We apply this top-gating technique to double QDs to stabilize the charge state for the electron number down to zero.
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Submitted 29 March, 2013;
originally announced April 2013.
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Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots
Authors:
G. Yamahata,
T. Kodera,
H. O. H. Churchill,
K. Uchida,
C. M. Marcus,
S. Oda
Abstract:
We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field scale is attributed to spin-orbit mediated spin relaxation. On a larger (\sim 400 mT) field scale, a peak in leakage current is seen in some, but not all, Pauli…
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We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field scale is attributed to spin-orbit mediated spin relaxation. On a larger (\sim 400 mT) field scale, a peak in leakage current is seen in some, but not all, Pauli-blocked transitions, and is attributed to spin-flip cotunneling. Both dip and peak structure show good agreement between theory and experiment.
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Submitted 30 November, 2011; v1 submitted 29 November, 2011;
originally announced November 2011.
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Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots
Authors:
T. Ferrus,
A. Rossi,
W. Lin,
D. A. Williams,
T. Kodera,
S. Oda
Abstract:
We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow…
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We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed.
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Submitted 25 April, 2012; v1 submitted 22 September, 2011;
originally announced September 2011.
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Detection of variable tunneling rates in silicon quantum dots
Authors:
A. Rossi,
T. Ferrus,
W. Lin,
T. Kodera,
D. A. Williams,
S. Oda
Abstract:
Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that th…
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Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that this architecture can be operated to reveal asymmetries in the transport characteristic of the QD. Indeed, the observation of gate voltage shifts in the detector's response as the QD bias is changed is an indication of variable tunneling rates.
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Submitted 14 February, 2011;
originally announced February 2011.
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Bottom-Up Approach to Silicon Nanoelectronics
Authors:
Hiroshi Mizumita,
S. Oda
Abstract:
This paper presents a brief review of our recent work investigating a novel bottom-up approach to realize silicon based nanoelectronics. We discuss fabrication technique, electronic properties and device applications of silicon nanodots as a building block for nanoscale silicon devices.
This paper presents a brief review of our recent work investigating a novel bottom-up approach to realize silicon based nanoelectronics. We discuss fabrication technique, electronic properties and device applications of silicon nanodots as a building block for nanoscale silicon devices.
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Submitted 14 August, 2007;
originally announced August 2007.
