Showing 1–22 of 22 results for author: Kodera, T

Suppression of Electromagnetic Crosstalk by Differential Excitation for SAW Generation

Authors: Shunsuke Ota, Yuma Okazaki, Shuji Nakamura, Takehiko Oe, Hermann Sellier, Christopher Bäuerle, Nobu-Hisa Kaneko, Tetsuo Kodera, Shintaro Takada

Abstract: Surface acoustic waves (SAWs) hold a vast potential in various fields such as spintronics, quantum acoustics, and electron-quantum optics, but an electromagnetic wave emanating from SAW generation circuits has often been a major hurdle. Here, we investigate a differential excitation method of interdigital transducers (IDTs) to generate SAWs while reducing the electromagnetic wave. The results show… ▽ More Surface acoustic waves (SAWs) hold a vast potential in various fields such as spintronics, quantum acoustics, and electron-quantum optics, but an electromagnetic wave emanating from SAW generation circuits has often been a major hurdle. Here, we investigate a differential excitation method of interdigital transducers (IDTs) to generate SAWs while reducing the electromagnetic wave. The results show that electromagnetic waves are suppressed by more than 90% in all directions. This suppression overcomes the operating limits and improves the scalability of SAW systems. Our results promise to facilitate the development of SAW-based applications in a wide range of research fields. △ Less

Submitted 24 December, 2023; originally announced December 2023.

On-Demand Single-Electron Source via Single-Cycle Acoustic Pulses

Authors: Shunsuke Ota, Junliang Wang, Hermann Edlbauer, Yuma Okazaki, Shuji Nakamura, Takehiko Oe, Arne Ludwig, Andreas D. Wieck, Hermann Sellier, Christopher Bäuerle, Nobu-Hisa Kaneko, Tetsuo Kodera, Shintaro Takada

Abstract: Surface acoustic waves (SAWs) are a reliable solution to transport single electrons with precision in piezoelectric semiconductor devices. Recently, highly efficient single-electron transport with a strongly compressed single-cycle acoustic pulse has been demonstrated. This approach, however, requires surface gates constituting the quantum dots, their wiring, and multiple gate movements to load an… ▽ More Surface acoustic waves (SAWs) are a reliable solution to transport single electrons with precision in piezoelectric semiconductor devices. Recently, highly efficient single-electron transport with a strongly compressed single-cycle acoustic pulse has been demonstrated. This approach, however, requires surface gates constituting the quantum dots, their wiring, and multiple gate movements to load and unload the electrons, which is very time-consuming. Here, on the contrary, we employ such a single-cycle acoustic pulse in a much simpler way - without any quantum dot at the entrance or exit of a transport channel - to perform single-electron transport between distant electron reservoirs. We observe the transport of a solitary electron in a single-cycle acoustic pulse via the appearance of the quantized acousto-electric current. The simplicity of our approach allows for on-demand electron emission with arbitrary delays on a ns time scale. We anticipate that enhanced synthesis of the SAWs will facilitate electron-quantum-optics experiments with multiple electron flying qubits. △ Less

Submitted 30 November, 2023; originally announced December 2023.

Coulomb-mediated antibunching of an electron pair surfing on sound

Authors: Junliang Wang, Hermann Edlbauer, Aymeric Richard, Shunsuke Ota, Wanki Park, Jeongmin Shim, Arne Ludwig, Andreas Wieck, Heung-Sun Sim, Matias Urdampilleta, Tristan Meunier, Tetsuo Kodera, Nobu-Hisa Kaneko, Hermann Sellier, Xavier Waintal, Shintaro Takada, Christopher Bäuerle

Abstract: Electron flying qubits are envisioned as potential information link within a quantum computer, but also promise -- alike photonic approaches -- a self-standing quantum processing unit. In contrast to its photonic counterpart, electron-quantum-optics implementations are subject to Coulomb interaction, which provide a direct route to entangle the orbital or spin degree of freedom. However, the contr… ▽ More Electron flying qubits are envisioned as potential information link within a quantum computer, but also promise -- alike photonic approaches -- a self-standing quantum processing unit. In contrast to its photonic counterpart, electron-quantum-optics implementations are subject to Coulomb interaction, which provide a direct route to entangle the orbital or spin degree of freedom. However, the controlled interaction of flying electrons at the single particle level has not yet been established experimentally. Here we report antibunching of a pair of single electrons that is synchronously shuttled through a circuit of coupled quantum rails by means of a surface acoustic wave. The in-flight partitioning process exhibits a reciprocal gating effect which allows us to ascribe the observed repulsion predominantly to Coulomb interaction. Our single-shot experiment marks an important milestone on the route to realise a controlled-phase gate for in-flight quantum manipulations. △ Less

Submitted 7 October, 2022; originally announced October 2022.

Journal ref: Nature Nanotechnology 18, 721-726 (2023)

Generation of a single-cycle acoustic pulse: a scalable solution for transport in single-electron circuits

Authors: Junliang Wang, Shunsuke Ota, Hermann Edlbauer, Baptiste Jadot, Pierre-André Mortemousque, Aymeric Richard, Yuma Okazaki, Shuji Nakamura, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier, Tetsuo Kodera, Nobu-Hisa Kaneko, Shintaro Takada, Christopher Bäuerle

Abstract: The synthesis of single-cycle, compressed optical and microwave pulses sparked novel areas of fundamental research. In the field of acoustics, however, such a generation has not been introduced yet. For numerous applications, the large spatial extent of surface acoustic waves (SAW) causes unwanted perturbations and limits the accuracy of physical manipulations. Particularly, this restriction appli… ▽ More The synthesis of single-cycle, compressed optical and microwave pulses sparked novel areas of fundamental research. In the field of acoustics, however, such a generation has not been introduced yet. For numerous applications, the large spatial extent of surface acoustic waves (SAW) causes unwanted perturbations and limits the accuracy of physical manipulations. Particularly, this restriction applies to SAW-driven quantum experiments with single flying electrons, where extra modulation renders the exact position of the transported electron ambiguous and leads to undesired spin mixing. Here, we address this challenge by demonstrating single-shot chirp synthesis of a strongly compressed acoustic pulse. Employing this solitary SAW pulse to transport a single electron between distant quantum dots with an efficiency exceeding 99%, we show that chirp synthesis is competitive with regular transduction approaches. Performing a time-resolved investigation of the SAW-driven sending process, we outline the potential of the chirped SAW pulse to synchronize single-electron transport from many quantum-dot sources. By superimposing multiple pulses, we further point out the capability of chirp synthesis to generate arbitrary acoustic waveforms tailorable to a variety of (opto)nanomechanical applications. Our results shift the paradigm of compressed pulses to the field of acoustic phonons and pave the way for a SAW-driven platform of single-electron transport that is precise, synchronized, and scalable. △ Less

Submitted 31 July, 2022; originally announced August 2022.

Comments: To be published in Physical Review X

Journal ref: Phys. Rev. X 12, 031035 (2022)

In-flight distribution of an electron within a surface acoustic wave

Authors: Hermann Edlbauer, Junliang Wang, Shunsuke Ota, Americ Richard, Baptiste Jadot, Pierre-André Mortemousque, Yuma Okazaki, Shuji Nakamura, Tetsuo Kodera, Nobu-Hisa Kaneko, Arne Ludwig, Andreas D. Wieck, Matias Urdampilleta, Tristan Meunier, Christopher Bäuerle, Shintaro Takada

Abstract: Surface acoustic waves (SAW) have large potential to realize quantum-optics-like experiments with single flying electrons employing their spin or charge degree of freedom. For such quantum applications, highly efficient trapping of the electron in a specific moving quantum dot (QD) of a SAW train plays a key role. Probabilistic transport over multiple moving minima would cause uncertainty in synch… ▽ More Surface acoustic waves (SAW) have large potential to realize quantum-optics-like experiments with single flying electrons employing their spin or charge degree of freedom. For such quantum applications, highly efficient trapping of the electron in a specific moving quantum dot (QD) of a SAW train plays a key role. Probabilistic transport over multiple moving minima would cause uncertainty in synchronisation that is detrimental for coherence of entangled flying electrons and in-flight quantum operations. It is thus of central importance to identify the device parameters enabling electron transport within a single SAW minimum. A detailed experimental investigation of this aspect is so far missing. Here we fill this gap by demonstrating time-of-flight measurements for a single electron that is transported via a SAW train between distant stationary QDs. Our measurements reveal the in-flight distribution of the electron within the moving acousto-electric quantum dots of the SAW train. Increasing the acousto-electric amplitude, we observe the threshold necessary to confine the flying electron at a specific, deliberately chosen SAW minimum. Investigating the effect of a barrier along the transport channel, we also benchmark the robustness of SAW-driven electron transport against stationary potential variations. Our results pave the way for highly controlled transport of electron qubits in a SAW-driven platform for quantum experiments. △ Less

Submitted 24 September, 2021; v1 submitted 20 July, 2021; originally announced July 2021.

Comments: Main paper: 11 pages, 3 figures, Supplementary material: 5 pages, 4 figures

Journal ref: Appl. Phys. Lett. 119, 114004 (2021)

Designs for a two-dimensional Si quantum dot array with spin qubit addressability

Authors: Masahiro Tadokoro, Takashi Nakajima, Takashi Kobayashi, Kenta Takeda, Akito Noiri, Kaito Tomari, Jun Yoneda, Seigo Tarucha, Tetsuo Kodera

Abstract: Electron spins in Si are an attractive platform for quantum computation, backed with their scalability and fast, high-fidelity quantum logic gates. Despite the importance of two-dimensional integration with efficient connectivity between qubits for medium- to large-scale quantum computation, however, a practical device design that guarantees qubit addressability is yet to be seen. Here, we propose… ▽ More Electron spins in Si are an attractive platform for quantum computation, backed with their scalability and fast, high-fidelity quantum logic gates. Despite the importance of two-dimensional integration with efficient connectivity between qubits for medium- to large-scale quantum computation, however, a practical device design that guarantees qubit addressability is yet to be seen. Here, we propose a practical 3 x 3 quantum dot device design and a larger-scale design as a longer-term target. The design goal is to realize qubit connectivity to the four nearest neighbors while ensuring addressability. We show that a 3 x 3 quantum dot array can execute four-qubit Grover's algorithm more efficiently than the one-dimensional counterpart. To scale up the two-dimensional array beyond 3 x 3, we propose a novel structure with ferromagnetic gate electrodes. Our results showcase the possibility of medium-sized quantum processors in Si with fast quantum logic gates and long coherence times. △ Less

Submitted 11 July, 2021; v1 submitted 21 June, 2021; originally announced June 2021.

Comments: 15 pages, 4 figures, 3 tables

4.2 K Sensitivity-Tunable Radio Frequency Reflectometry of a Physically Defined P-channel Silicon Quantum Dot

Authors: Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Shigenori Murakami, Takahiro Mori, Thierry Ferrus, Tetsuo Kodera

Abstract: We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2\,K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the pre… ▽ More We demonstrate the measurement of p-channel silicon-on-insulator quantum dots at liquid helium temperatures by using a radio frequency (rf) reflectometry circuit comprising of two independently tunable GaAs varactors. This arrangement allows observing Coulomb diamonds at 4.2\,K under nearly best matching condition and optimal signal-to-noise ratio. We also discuss the rf leakage induced by the presence of the large top gate in MOS nanostructures and its consequence on the efficiency of rf-reflectometry. These results open the way to fast and sensitive readout in multi-gate architectures, including multi-qubit platforms. △ Less

Submitted 8 November, 2021; v1 submitted 11 May, 2021; originally announced May 2021.

Journal ref: Sci Rep 11, 20039 (2021)

Surpassing the Classical Limit in Magic Square Game with Distant Quantum Dots Coupled to Optical Cavities

Authors: Sinan Bugu, Fatih Ozaydin, Tetsuo Kodera

Abstract: The emergence of quantum technologies is heating up the debate on quantum supremacy, usually focusing on the feasibility of looking good on paper algorithms in realistic settings, due to the vulnerability of quantum systems to myriad sources of noise. In this vein, an interesting example of quantum pseudo-telepathy games that quantum mechanical resources can theoretically outperform classical reso… ▽ More The emergence of quantum technologies is heating up the debate on quantum supremacy, usually focusing on the feasibility of looking good on paper algorithms in realistic settings, due to the vulnerability of quantum systems to myriad sources of noise. In this vein, an interesting example of quantum pseudo-telepathy games that quantum mechanical resources can theoretically outperform classical resources is the Magic Square game (MSG), in which two players play against a referee. Due to noise, however, the unit winning probability of the players can drop well below the classical limit. Here, we propose a timely and unprecedented experimental setup for quantum computation with quantum dots inside optical cavities, along with ancillary photons for realizing interactions between distant dots to implement the MSG. Considering various physical imperfections of our setup, we first show that the MSG can be implemented with the current technology, outperforming the classical resources under realistic conditions. Next, we show that our work gives rise to a new version of the game. That is, if the referee has information on the physical realization and strategy of the players, he can bias the game through filtered randomness and increase his winning probability. We believe our work contributes to not only quantum game theory, but also quantum computing with quantum dots. △ Less

Submitted 3 November, 2020; originally announced November 2020.

Comments: 11 pages, 5 figures

Journal ref: Sci Rep 10, 22202 (2020)

RF Reflectometry for Readout of Charge Transition in a Physically Defined PMOS Silicon Quantum Dot

Authors: Sinan Bugu, Shimpei Nishiyama, Kimihiko Kato, Yongxun Liu, Takahiro Mori, Tetsuo Kodera

Abstract: We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the cutoff frequency of the device which emerges in MOS devices that have a top gate and act as RC low-pass filter, we fabricate a new device to reduce the device's top gate area from 400 $\mbox{$μ$m}^2$ to 0.09 $\mbox{$μ… ▽ More We have embedded a physically defined p-channel silicon MOS quantum dot (QD) device into an impedance transformer RC circuit. To decrease the parasitic capacitance and surpass the cutoff frequency of the device which emerges in MOS devices that have a top gate and act as RC low-pass filter, we fabricate a new device to reduce the device's top gate area from 400 $\mbox{$μ$m}^2$ to 0.09 $\mbox{$μ$m}^2$. Having a smaller top gate eliminates the cutoff frequency problem preventing the RF signal from reaching QD. We show that we have fabricated a single QD properly, which is essential for RF single-electron transistor technique. We also analyze and improve the impedance matching condition and show that it is possible to perform readout of charge transition at 4.2 K by RF reflectometry, which will get us to fast readout of charge and spin states. △ Less

Submitted 25 February, 2021; v1 submitted 15 October, 2020; originally announced October 2020.

Comments: 11 pages, 6 figures

Spin orbit field in a physically defined p type MOS silicon double quantum dot

Authors: Marian Marx, Jun Yoneda, Ángel Gutiérrez Rubio, Peter Stano, Tomohiro Otsuka, Kenta Takeda, Sen Li, Yu Yamaoka, Takashi Nakajima, Akito Noiri, Daniel Loss, Tetsuo Kodera, Seigo Tarucha

Abstract: We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel.… ▽ More We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the double dot in the Pauli spin blockade. A finite magnetic field lifts the blockade, with the lifting least effective when the external and SO fields are parallel. In this way, we find that the spin flip of a tunneling hole is due to a SO field pointing perpendicular to the double dot axis and almost fully out of the quantum well plane. We augment the measurements by a derivation of SO terms using group symmetric representations theory. It predicts that without in plane electric fields (a quantum well case), the SO field would be mostly within the plane, dominated by a sum of a Rashba and a Dresselhaus like term. We, therefore, interpret the observed SO field as originated in the electric fields with substantial in plane components. △ Less

Submitted 17 March, 2020; v1 submitted 16 March, 2020; originally announced March 2020.

Comments: 21 pages, 4 figures

Repetitive single electron spin readout in silicon

Authors: J. Yoneda, K. Takeda, A. Noiri, T. Nakajima, S. Li, J. Kamioka, T. Kodera, S. Tarucha

Abstract: Single electron spins confined in silicon quantum dots hold great promise as a quantum computing architecture with demonstrations of long coherence times, high-fidelity quantum logic gates, basic quantum algorithms and device scalability. While single-shot spin detection is now a laboratory routine, the need for quantum error correction in a large-scale quantum computing device demands a quantum n… ▽ More Single electron spins confined in silicon quantum dots hold great promise as a quantum computing architecture with demonstrations of long coherence times, high-fidelity quantum logic gates, basic quantum algorithms and device scalability. While single-shot spin detection is now a laboratory routine, the need for quantum error correction in a large-scale quantum computing device demands a quantum non-demolition (QND) implementation. Unlike conventional counterparts, the QND spin readout imposes minimal disturbance to the probed spin polarization and can therefore be repeated to extinguish measurement errors. However, it has remained elusive for an electron spin in silicon as it involves exquisite exposure of the system to the external circuitry for readout while maintaining the coherence and integrity of the qubit. Here we show that an electron spin qubit in silicon can be measured in a highly non-demolition manner by probing another electron spin in a neighboring dot Ising-coupled to the qubit spin. The high non-demolition fidelity (99% on average) enables over 20 readout repetitions of a single spin state, yielding an overall average measurement fidelity of up to 95% within 1.2 ms. We further demonstrate that our repetitive QND readout protocol can realize heralded high-fidelity (> 99.6%) ground-state preparation. Our QND-based measurement and preparation, mediated by a second qubit of the same kind, will allow for a new class of quantum information protocols with electron spins in silicon without compromising the architectural homogeneity. △ Less

Submitted 25 October, 2019; originally announced October 2019.

Journal ref: Nature Communications 11, 1144 (2020)

Radio-frequency detected fast charge sensing in undoped silicon quantum dots

Authors: Akito Noiri, Kenta Takeda, Jun Yoneda, Takashi Nakajima, Tetsuo Kodera, Seigo Tarucha

Abstract: Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters and therefore its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we d… ▽ More Spin qubits in silicon quantum dots offer a promising platform for a quantum computer as they have a long coherence time and scalability. The charge sensing technique plays an essential role in reading out the spin qubit as well as tuning the device parameters and therefore its performance in terms of measurement bandwidth and sensitivity is an important factor in spin qubit experiments. Here we demonstrate fast and sensitive charge sensing by a radio-frequency reflectometry of an undoped, accumulation-mode Si/SiGe double quantum dot. We show that the large parasitic capacitance in typical accumulation-mode gate geometries impedes reflectometry measurements. We present a gate geometry that significantly reduces the parasitic capacitance and enables fast single-shot readout. The technique allows us to distinguish between the singly- and doubly-occupied two-electron states under the Pauli spin blockade condition in an integration time of 0.8 μs, the shortest value ever reported in silicon, by the signal-to-noise ratio of 6. These results provide a guideline for designing silicon spin qubit devices suitable for the fast and high-fidelity readout. △ Less

Submitted 12 February, 2020; v1 submitted 8 October, 2019; originally announced October 2019.

Journal ref: Nano Letters 20, 947-952 (2020)

Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift

Authors: K. Takeda, J. Yoneda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, Y. Hoshi, N. Usami, K. M. Itoh, S. Oda, T. Kodera, S. Tarucha

Abstract: Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of… ▽ More Electron spins confined in quantum dots are an attractive system to realize high-fidelity qubits owing to their long coherence time. With the prolonged spin coherence time, however, the control fidelity can be limited by systematic errors rather than decoherence, making characterization and suppression of their influence crucial for further improvement. Here we report that the control fidelity of Si/SiGe spin qubits can be limited by the microwave-induced frequency shift of electric dipole spin resonance and it can be improved by optimization of control pulses. As we increase the control microwave amplitude, we observe a shift of the qubit resonance frequency, in addition to the increasing Rabi frequency. We reveal that this limits control fidelity with a conventional amplitude-modulated microwave pulse below 99.8%. In order to achieve a gate fidelity > 99.9%, we introduce a quadrature control method, and validate this approach experimentally by randomized benchmarking. Our finding facilitates realization of an ultra-high fidelity qubit with electron spins in quantum dots. △ Less

Submitted 29 October, 2018; originally announced October 2018.

Journal ref: npj Quantum Information (2018) 4:54

A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise

Authors: J. Yoneda, K. Takeda, T. Otsuka, T. Nakajima, M. R. Delbecq, G. Allison, T. Honda, T. Kodera, S. Oda, Y. Hoshi, N. Usami, K. M. Itoh, S. Tarucha

Abstract: Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile, addressable single-spin and spin-spin manipulations in multiple-qubit systems will necessitate sizable spin-electric coupling. Given background charge fluctuation… ▽ More Recent advances towards spin-based quantum computation have been primarily fuelled by elaborate isolation from noise sources, such as surrounding nuclear spins and spin-electric susceptibility, to extend spin coherence. In the meanwhile, addressable single-spin and spin-spin manipulations in multiple-qubit systems will necessitate sizable spin-electric coupling. Given background charge fluctuation in nanostructures, however, its compatibility with enhanced coherence should be crucially questioned. Here we realise a single-electron spin qubit with isotopically-enriched phase coherence time (20 microseconds) and fast electrical control speed (up to 30 MHz) mediated by extrinsic spin-electric coupling. Using rapid spin rotations, we reveal that the free-evolution dephasing is caused by charge (instead of conventional magnetic) noise featured by a 1/f spectrum over seven decades of frequency. The qubit nevertheless exhibits superior performance with single-qubit gate fidelities exceeding 99.9% on average. Our work strongly suggests that designing artificial spin-electric coupling with account taken of charge noise is a promising route to large-scale spin-qubit systems having fault-tolerant controllability. △ Less

Submitted 4 August, 2017; originally announced August 2017.

Journal ref: Nature Nanotechnology 13, 102-106 (2018)

A fault-tolerant addressable spin qubit in a natural silicon quantum dot

Authors: K. Takeda, J. Kamioka, T. Otsuka, J. Yoneda, T. Nakajima, M. R. Delbecq, S. Amaha, G. Allison, T. Kodera, S. Oda, S. Tarucha

Abstract: Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubits, but not in industry standard natural (unpurified) silicon. Here we demonstrate an addressable fault-tolerant qubit using a natural silicon double q… ▽ More Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubits, but not in industry standard natural (unpurified) silicon. Here we demonstrate an addressable fault-tolerant qubit using a natural silicon double quantum dot with a micromagnet optimally designed for fast spin control. This optimized design allows us to achieve the optimum Rabi oscillation quality factor Q = 140 at a Rabi frequency of 10 MHz in the frequency range two orders of magnitude higher than that achieved in previous studies. This leads to a qubit fidelity of 99.6 %, which is the highest reported for natural silicon qubits and comparable to that obtained in isotopically purified silicon quantum-dot-based qubits. This result can inspire contributions from the industrial and quantum computing communities. △ Less

Submitted 25 February, 2016; originally announced February 2016.

Journal ref: Science Advances 2, e1600694 (2016)

GHz photon-activated hopping between localized states in a silicon quantum dot

Authors: T. Ferrus, A. Rossi, A. Andreev, T. Kodera, T. Kambara, W. Lin, S. Oda, D. A. Williams

Abstract: We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to… ▽ More We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to optically control and operate electrically isolated structures by microwave pulses. In quantum computing architectures, these results may lead to the use of microwave multiplexing to manipulate quantum states in a multi-qubit configuration. △ Less

Submitted 19 December, 2013; originally announced December 2013.

Comments: New Journal of Physics, in press

Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer

Authors: T. Obata, K. Takeda, J. Kamioka, T. Kodera, W. M. Akhtar, K. Sawano, S. Oda, Y. Shiraki, S. Tarucha

Abstract: We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signa… ▽ More We develop quantum dots in a single layered MOS structure using an undoped Si/SiGe wafer. By applying a positive bias on the surface gates, electrons are accumulated in the Si channel. Clear Coulomb diamond and double dot charge stability diagrams are measured. The temporal fluctuation of the current is traced, to which we apply the Fourier transform analysis. The power spectrum of the noise signal is inversely proportional to the frequency, and is different from the inversely quadratic behavior known for quantum dots made in doped wafers. Our results indicate that the source of charge noise for the doped wafers is related to the 2DEG dopant. △ Less

Submitted 12 November, 2013; originally announced November 2013.

Comments: Proceedings of the 12th Asia Pacific Physics Conference

Characterization and Suppression of Low-frequency Noise in Si/SiGe Quantum Point Contacts and Quantum Dots

Authors: K. Takeda, T. Obata, Y. Fukuoka, W. M. Akhtar, J. Kamioka, T. Kodera, S. Oda, S. Tarucha

Abstract: We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negativ… ▽ More We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian type charge noise. As the top gate voltage is decreased, the QPC pinch-off voltage becomes less negative, and the 1/f2 noise becomes rapidly suppressed in a homogeneous background 1/f noise. We apply this top-gating technique to double QDs to stabilize the charge state for the electron number down to zero. △ Less

Submitted 29 March, 2013; originally announced April 2013.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 102, 123113 (2013)

Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots

Authors: G. Yamahata, T. Kodera, H. O. H. Churchill, K. Uchida, C. M. Marcus, S. Oda

Abstract: We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field scale is attributed to spin-orbit mediated spin relaxation. On a larger (\sim 400 mT) field scale, a peak in leakage current is seen in some, but not all, Pauli… ▽ More We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field scale is attributed to spin-orbit mediated spin relaxation. On a larger (\sim 400 mT) field scale, a peak in leakage current is seen in some, but not all, Pauli-blocked transitions, and is attributed to spin-flip cotunneling. Both dip and peak structure show good agreement between theory and experiment. △ Less

Submitted 30 November, 2011; v1 submitted 29 November, 2011; originally announced November 2011.

Comments: supplementary material here: http://marcuslab.harvard.edu/SiDQDsupp.pdf

Journal ref: Phys Rev. B 86, 115322 (2012)

Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

Authors: T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, S. Oda

Abstract: We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow… ▽ More We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed. △ Less

Submitted 25 April, 2012; v1 submitted 22 September, 2011; originally announced September 2011.

Comments: 15 pages

Journal ref: AIP Advances 2, 2, 022114 (2012)

Detection of variable tunneling rates in silicon quantum dots

Authors: A. Rossi, T. Ferrus, W. Lin, T. Kodera, D. A. Williams, S. Oda

Abstract: Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that th… ▽ More Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that this architecture can be operated to reveal asymmetries in the transport characteristic of the QD. Indeed, the observation of gate voltage shifts in the detector's response as the QD bias is changed is an indication of variable tunneling rates. △ Less

Submitted 14 February, 2011; originally announced February 2011.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 98, 133506 (2011)

Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

Authors: T. Kodera, T. Ferrus, T. Nakaoka, G. Podd, M. Tanner, D. Williams, Y. Arakawa

Abstract: We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor (LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and bot… ▽ More We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor (LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel. △ Less

Submitted 8 May, 2009; originally announced May 2009.

Comments: 5 pages, 4 figures, to appear in Jpn. J. Appl. Phys