Showing 1–50 of 93 results for author: Williams, D

Molecular Beam Epitaxy of KTaO$_3$

Authors: Tobias Schwaigert, Salva Salmani-Razaie, Matthew R. Barone, Hanjong Paik, Ethan Ray, Michael D. Williams, David A. Muller, Darrell G. Schlom, Kaveh Ahadi

Abstract: Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high quality KTaO3 thin films by molecular-beam epitaxy. Tantalum was provided by both a suboxide source emanating a TaO2 flux from Ta2O5 co… ▽ More Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high quality KTaO3 thin films by molecular-beam epitaxy. Tantalum was provided by both a suboxide source emanating a TaO2 flux from Ta2O5 contained in a conventional effusion cell as well as an electron-beam-heated tantalum source. Excess potassium and a combination of ozone and oxygen (10 \% O3 + 90 \% O2) were simultaneously supplied with the TaO$_2$ (or tantalum) molecular beams to grow the KTaO$_3$ films. Laue fringes suggest that the films are smooth with an abrupt film/substrate interface. Cross-sectional scanning transmission electron microscopy does not show any extended defects and confirms that the films have an atomically abrupt interface with the substrate. Atomic force microscopy reveals atomic steps at the surface of the grown films. Reciprocal space mapping demonstrates that the films, when sufficiently thin, are coherently strained to the SrTiO$_3$ (001) and GdScO$_3$ (110) substrates. △ Less

Submitted 29 December, 2022; originally announced December 2022.

Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy

Authors: Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom

Abstract: We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiti… ▽ More We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of $β$-Ga$_2$O$_3$ by conventional MBE. As a result, a growth rate of ~1 $μ$m/h is readily achieved at a relatively low growth temperature (T$_{sub}$ = 525 $^\circ$C), resulting in films with high structural perfection and smooth surfaces (rms roughness of < 2 nm on ~1 $μ$m thick films). Silicon-containing oxide sources (SiO and SiO$_2$) producing an SiO suboxide molecular beam are used to dope the $β$-Ga$_2$O$_3$ layers. Temperature-dependent Hall effect measurements on a 1 $μ$m thick film with a mobile carrier concentration of 2.7x10$^{17}$ cm$^{-3}$ reveal a room-temperature mobility of 124 cm$^2$ V$^{-1}$ s$^{-1}$ that increases to 627 cm$^2$ V$^{-1}$ s$^{-1}$ at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working MESFETs made from these silicon-doped $β$-Ga$_2$O$_3$ films grown by S-MBE at growth rates of ~1 $μ$m/h. △ Less

Submitted 22 December, 2022; originally announced December 2022.

Comments: 19 pages, 7 figures, 2 tables, 2 pages supplementary materials

Exclusion zone phenomena in water -- a critical review of experimental findings and theories

Authors: Daniel C. Elton, Peter D. Spencer, James D. Riches, Elizabeth D. Williams

Abstract: The existence of the exclusion zone (EZ), a layer of water in which plastic microspheres are repelled from hydrophilic surfaces, has now been independently demonstrated by several groups. A better understanding of the mechanisms which generate EZs would help with understanding the possible importance of EZs in biology and in engineering applications such as filtration and microfluidics. Here we re… ▽ More The existence of the exclusion zone (EZ), a layer of water in which plastic microspheres are repelled from hydrophilic surfaces, has now been independently demonstrated by several groups. A better understanding of the mechanisms which generate EZs would help with understanding the possible importance of EZs in biology and in engineering applications such as filtration and microfluidics. Here we review the experimental evidence for EZ phenomena in water and the major theories that have been proposed. We review experimental results from birefringence, neutron radiography, nuclear magnetic resonance, and other studies. Pollack and others have theorized that water in the EZ exists has a different structure than bulk water, and that this accounts for the EZ. We present several alternative explanations for EZs and argue that Schurr's theory based on diffusiophoresis presents a compelling alternative explanation for the core EZ phenomenon. Among other things, Schurr's theory makes predictions about the growth of the EZ with time which have been confirmed by Florea et al. and others. We also touch on several possible confounding factors that make experimentation on EZs difficult, such as charged surface groups, dissolved solutes, and adsorbed nanobubbles. △ Less

Submitted 30 June, 2020; v1 submitted 15 September, 2019; originally announced September 2019.

Comments: 14 pgs

Journal ref: Int. J. Mol. Sci. 21(14), 5041, 2020

Theory of rotational columnar structures of soft spheres

Authors: Jens Winkelmann, Adil Mughal, David B. Williams, Denis Weaire, Stefan Hutzler

Abstract: There is a growing interest in cylindrical structures of hard and soft particles. A promising new method to assemble such structures has recently been introduced by Lee et al. [T. Lee, K. Gizynski, and B. Grzybowski, Adv. Mater. 29, 1704274 (2017)]. They used rapid rotation around a central axis to drive spheres of lower density than the surrounding fluid towards this axis. This resulted in differ… ▽ More There is a growing interest in cylindrical structures of hard and soft particles. A promising new method to assemble such structures has recently been introduced by Lee et al. [T. Lee, K. Gizynski, and B. Grzybowski, Adv. Mater. 29, 1704274 (2017)]. They used rapid rotation around a central axis to drive spheres of lower density than the surrounding fluid towards this axis. This resulted in different structures as the number of spheres is varied. Here we present comprehensive analytic energy calculations for such self-assembled structures, based on a generic soft sphere model, from which we obtain a phase diagram. It displays interesting features, including peritectoid points. These analytic calculations are complemented by preliminary numerical simulations for finite sample sizes with soft spheres. A similar analytic approach could be used to study packings of spheres inside cylinders of fixed dimensions, but with a variation in the number of spheres. △ Less

Submitted 25 February, 2019; v1 submitted 8 August, 2018; originally announced August 2018.

Comments: published in Phys Rev E as Rapid Comm

Journal ref: Phys. Rev. E 99, 020602 (2019)

Electronic structure of the neutral silicon-vacancy center in diamond

Authors: B. L. Green, M. W. Doherty, E. Nako, N. B. Manson, U. F. S. D'Haenens-Johansson, S. D. Williams, D. J. Twitchen, M. E. Newton

Abstract: The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin lifetimes (T2 ~ 1 ms at 4 K) and up to 90% of optical emission into its 946 nm zero-phonon line. However, the electronic structure of SiV0 is poorly understood, making further exploitation difficult. Performing photolumine… ▽ More The neutrally-charged silicon vacancy in diamond is a promising system for quantum technologies that combines high-efficiency, broadband optical spin polarization with long spin lifetimes (T2 ~ 1 ms at 4 K) and up to 90% of optical emission into its 946 nm zero-phonon line. However, the electronic structure of SiV0 is poorly understood, making further exploitation difficult. Performing photoluminescence spectroscopy of SiV0 under uniaxial stress, we find the previous excited electronic structure of a single 3A1u state is incorrect, and identify instead a coupled 3Eu - 3A2u system, the lower state of which has forbidden optical emission at zero stress and so efficiently decreases the total emission of the defect: we propose a solution employing finite strain to form the basis of a spin-photon interface. Isotopic enrichment definitively assigns the 976 nm transition associated with the defect to a local mode of the silicon atom. △ Less

Submitted 24 April, 2018; originally announced April 2018.

Journal ref: Phys. Rev. B 99, 161112 (2019)

Probing the dark exciton states of a single quantum dot using photocurrent spectroscopy in magnetic fields

Authors: Kai Peng, Shiyao Wu, Jing Tang, Feilong Song, Chenjiang Qian, Sibai Sun, Shan Xiao, Meng Wang, Ali Hassan, David A. Williams, Xiulai Xu

Abstract: We report on high-resolution photoluminescence (PL) and photocurrent (PC) spectroscopies of a single self-assembled InAs/GaAs quantum dot (QD) embedded in an n-i-Schottky device with an applied magnetic field in Faraday and Voigt geometries. The single-QD PC spectrum of neutral exciton (X$^0$) is obtained by sweeping the bias-dependent X$^0$ transition energy to achieve resonance with a fixed narr… ▽ More We report on high-resolution photoluminescence (PL) and photocurrent (PC) spectroscopies of a single self-assembled InAs/GaAs quantum dot (QD) embedded in an n-i-Schottky device with an applied magnetic field in Faraday and Voigt geometries. The single-QD PC spectrum of neutral exciton (X$^0$) is obtained by sweeping the bias-dependent X$^0$ transition energy to achieve resonance with a fixed narrow-bandwidth laser through quantum-confined Stark effect. With a magnetic field applied in Faraday geometry, the diamagnetic effect and the Zeeman splitting of X$^0$ are observed both in PL and PC spectra. When the magnetic field is applied in Voigt geometry, the mixture of bright and dark states results in an observation of dark exciton states, which are confirmed by the polarization-resolved PL and PC spectra. △ Less

Submitted 17 December, 2017; originally announced December 2017.

Comments: 13 pages, 4 figures

Journal ref: Phys. Rev. Applied 8,064018 (2017)

The neutral silicon-vacancy center in diamond: spin polarization and lifetimes

Authors: B. L. Green, S. Mottishaw, B. G. Breeze, A. M. Edmonds, U. F. S. D'Haenens-Johansson, M. W. Doherty, S. D. Williams, D. J. Twitchen, M. E. Newton

Abstract: We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~\mathrm{μs}$ at low-temperature, and a spin… ▽ More We demonstrate optical spin polarization of the neutrally-charged silicon-vacancy defect in diamond ($\mathrm{SiV^{0}}$), an $S=1$ defect which emits with a zero-phonon line at 946 nm. The spin polarization is found to be most efficient under resonant excitation, but non-zero at below-resonant energies. We measure an ensemble spin coherence time $T_2>100~\mathrm{μs}$ at low-temperature, and a spin relaxation limit of $T_1>25~\mathrm{s}$. Optical spin state initialization around 946 nm allows independent initialization of $\mathrm{SiV^{0}}$ and $\mathrm{NV^{-}}$ within the same optically-addressed volume, and $\mathrm{SiV^{0}}$ emits within the telecoms downconversion band to 1550 nm: when combined with its high Debye-Waller factor, our initial results suggest that $\mathrm{SiV^{0}}$ is a promising candidate for a long-range quantum communication technology. △ Less

Submitted 29 May, 2017; originally announced May 2017.

Journal ref: Phys. Rev. Lett. 119, 096402 (2017)

Tuneable Sieving of Ions Using Graphene Oxide Membranes

Authors: J. Abraham, K. S. Vasu, C. D. Williams, K. Gopinadhan, Y. Su, C. Cherian, J. Dix, E. Prestat, S. J. Haigh, I. V. Grigorieva, P. Carbone, A. K. Geim, R. R. Nair

Abstract: Graphene oxide membranes show exceptional molecular permeation properties, with a promise for many applications. However, their use in ion sieving and desalination technologies is limited by a permeation cutoff of ~9 Angstrom, which is larger than hydrated ion diameters for common salts. The cutoff is determined by the interlayer spacing d ~13.5 Angstrom, typical for graphene oxide laminates that… ▽ More Graphene oxide membranes show exceptional molecular permeation properties, with a promise for many applications. However, their use in ion sieving and desalination technologies is limited by a permeation cutoff of ~9 Angstrom, which is larger than hydrated ion diameters for common salts. The cutoff is determined by the interlayer spacing d ~13.5 Angstrom, typical for graphene oxide laminates that swell in water. Achieving smaller d for the laminates immersed in water has proved to be a challenge.Here we describe how to control d by physical confinement and achieve accurate and tuneable ion sieving. Membranes with d from ~ 9.8 Angstrom to 6.4 Angstrom are demonstrated, providing the sieve size smaller than typical ions' hydrated diameters.In this regime, ion permeation is found to be thermally activated with energy barriers of ~10-100 kJ/mol depending on d. Importantly, permeation rates decrease exponentially with decreasing the sieve size but water transport is weakly affected (by a factor of <2). The latter is attributed to a low barrier for water molecules entry and large slip lengths inside graphene capillaries. Building on these findings, we demonstrate a simple scalable method to obtain graphene-based membranes with limited swelling, which exhibit 97% rejection for NaCl. △ Less

Submitted 19 January, 2017; originally announced January 2017.

Journal ref: Nature Nanotechnology 12, 546-550, 2017

Observation of coupling between zero- and two-dimensional semiconductor systems based on anomalous diamagnetic effects

Authors: Shuo Cao, Jing Tang, Yue Sun, Kai Peng, Yunan Gao, Yanhui Zhao, Chenjiang Qian, Sibai Sun, Hassan Ali, Yuting Shao, Shiyao Wu, Feilong Song, David A. Williams, Weidong Sheng, Kuijuan Jin, Xiulai Xu

Abstract: We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one ord… ▽ More We report the direct observation of coupling between a single self-assembled InAs quantum dot and a wetting layer, based on strong diamagnetic shifts of many-body exciton states using magneto-photoluminescence spectroscopy. An extremely large positive diamagnetic coefficient is observed when an electron in the wetting layer combines with a hole in the quantum dot; the coefficient is nearly one order of magnitude larger than that of the exciton states confined in the quantum dots. Recombination of electrons with holes in a quantum dot of the coupled system leads to an unusual negative diamagnetic effect, which is five times stronger than that in a pure quantum dot system. This effect can be attributed to the expansion of the wavefunction of remaining electrons in the wetting layer or the spread of electrons in the excited states of the quantum dot to the wetting layer after recombination. In this case, the wavefunction extent of the final states in the quantum dot plane is much larger than that of the initial states because of the absence of holes in the quantum dot to attract electrons. The properties of emitted photons that depend on the large electron wavefunction extents in the wetting layer indicate that the coupling occurs between systems of different dimensionality, which is also verified from the results obtained by applying a magnetic field in different configurations. This study paves a new way to observe hybrid states with zero- and two-dimensional structures, which could be useful for investigating the Kondo physics and implementing spin-based solid-state quantum information processing. △ Less

Submitted 7 December, 2015; originally announced December 2015.

Comments: 20 pages, 7 figures in Nano Research, 2015

Graphene as a Novel Single Photon Counting Optical and IR Photodetector

Authors: J. O. D. Williams, J. S. Lapington, M. Roy, I. B. Hutchinson

Abstract: Bilayer graphene has many unique optoelectronic properties , including a tuneable band gap, that make it possible to develop new and more efficient optical and nanoelectronic devices. We have developed a Monte Carlo simulation for a single photon counting photodetector incorporating bilayer graphene. Our results show that, conceptually it would be feasible to manufacture a single photon counting p… ▽ More Bilayer graphene has many unique optoelectronic properties , including a tuneable band gap, that make it possible to develop new and more efficient optical and nanoelectronic devices. We have developed a Monte Carlo simulation for a single photon counting photodetector incorporating bilayer graphene. Our results show that, conceptually it would be feasible to manufacture a single photon counting photodetector (with colour sensitivity) from bilayer graphene for use across both optical and infrared wavelengths. Our concept exploits the high carrier mobility and tuneable band gap associated with a bilayer graphene approach. This allows for low noise operation over a range of cryogenic temperatures, thereby reducing the cost of cryogens with a trade off between resolution and operating temperature. The results from this theoretical study now enable us to progress onto the manufacture of prototype photon counters at optical and IR wavelengths that may have the potential to be groundbreaking in some scientific research applications. △ Less

Submitted 16 July, 2015; originally announced July 2015.

Comments: Conference Proceeding in Graphene-Based Technologies, 2015

Magnetotransport of single crystalline NbAs

Authors: N. J. Ghimire, Yongkang Luo, M. Neupane, D. J. Williams, E. D. Bauer, F. Ronning

Abstract: We report transport measurement in zero and applied magnetic field on a single crystal of NbAs. Transverse and longitudinal magnetoresistance in the plane of this tetragonal structure does not saturate up to 9 T. In the transverse configuration ($H \parallel c$, $I \perp c$) it is 230,000 \% at 2 K. The Hall coefficient changes sign from hole-like at room temperature to electron-like below $\sim$… ▽ More We report transport measurement in zero and applied magnetic field on a single crystal of NbAs. Transverse and longitudinal magnetoresistance in the plane of this tetragonal structure does not saturate up to 9 T. In the transverse configuration ($H \parallel c$, $I \perp c$) it is 230,000 \% at 2 K. The Hall coefficient changes sign from hole-like at room temperature to electron-like below $\sim$ 150 K. The electron carrier density and mobility calculated at 2 K based on a single band approximation are 1.8 x 10$^{19}$ cm$^{-3}$ and 3.5 x 10$^{5}$ cm$^2$/Vs, respectively. These values are similar to reported values for TaAs and NbP, and further emphasize that this class of noncentrosymmetric, transition-metal monopnictides is a promising family to explore the properties of Weyl semimetals and the consequences of their novel electronic structure. △ Less

Submitted 25 March, 2015; originally announced March 2015.

Comments: accepted in J. Phys.: Condens. Matter

Journal ref: J. Phys.: Condens. Matter 27 (2015) 152201

Longitudinal wave function control in single quantum dots with an applied magnetic field

Authors: Shuo Cao, Jing Tang, Yunan Gao, Yue Sun, Kangsheng Qiu, Yanhui Zhao, Min He, Jin-An Shi, Lin Gu, David A. Williams, Weidong Sheng, Kuijuan Jin, Xiulai Xu

Abstract: Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of p… ▽ More Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots. △ Less

Submitted 29 January, 2015; originally announced January 2015.

Comments: 19 pages,3 figures

Journal ref: Scientific Reports, 5, 8041 (2015)

Investigation of the physical properties of the tetragonal CeMAl4Si2 (M = Rh, Ir, Pt) compounds

Authors: N. J. Ghimire, F. Ronning, D. J. Williams, B. L. Scott, Yongkang Luo, J. D. Thompson, E. D. Bauer

Abstract: The synthesis, crystal structure, and physical properties studied by means of x-ray diffraction, magnetic, thermal and transport measurements of CeMAl$_{4}$Si$_{2}$ (M = Rh, Ir, Pt) are reported, along with the electronic structure calculations for LaMAl$_{4}$Si$_{2}$ (M = Rh, Ir, Pt). These materials adopt a tetragonal crystal structure (space group P4/mmm) comprised of BaAl$_4$ blocks, separated… ▽ More The synthesis, crystal structure, and physical properties studied by means of x-ray diffraction, magnetic, thermal and transport measurements of CeMAl$_{4}$Si$_{2}$ (M = Rh, Ir, Pt) are reported, along with the electronic structure calculations for LaMAl$_{4}$Si$_{2}$ (M = Rh, Ir, Pt). These materials adopt a tetragonal crystal structure (space group P4/mmm) comprised of BaAl$_4$ blocks, separated by MAl$_2$ units, stacked along the $c$-axis. Both CeRhAl$_{4}$Si$_{2}$ and CeIrAl$_{4}$Si$_{2}$ order antiferromagnetically below $T_{N1}$=14 and 16 K, respectively, and undergo a second antiferromagnetic transitition at lower temperature ($T_{N2}$=9 and 14 K, respectively). CePtAl$_{4}$Si$_{2}$ orders ferromagnetically below $T_C$ =3 K with an ordered moment of $μ_{sat}$=0.8 $μ_{B}$ for a magnetic field applied perpendicular to the $c$-axis. Electronic structure calculations reveal quasi-2D character of the Fermi surface. △ Less

Submitted 1 December, 2014; originally announced December 2014.

Journal ref: J. Phys.: Condens. Matter 27, 025601 (2015)

Charge state control in single InAs/GaAs quantum dots by external electric and magnetic fields

Authors: Jing Tang, Shuo Cao, Yunan Gao, Yue Sun, Weidong Geng, David A. Williams, Kuijuan Jin, Xiulai Xu

Abstract: We report a photoluminescence (PL) spectroscopy study of charge state control in single self-assembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2 K. Neutral and charged exciton complexes were observed under applied bias voltages from -0.5 V to 0.5 V by controlling the carrier tunneling. The highly negatively charged exciton emission becomes stronger with increasing p… ▽ More We report a photoluminescence (PL) spectroscopy study of charge state control in single self-assembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2 K. Neutral and charged exciton complexes were observed under applied bias voltages from -0.5 V to 0.5 V by controlling the carrier tunneling. The highly negatively charged exciton emission becomes stronger with increasing pumping power, arising from the fact that electrons have a smaller effective mass than holes and are more easily captured by the quantum dots. The integrated PL intensity of negatively charged excitons is affected significantly by a magnetic field applied along the sample growth axis. This observation is explained by a reduction in the electron drift velocity caused by an applied magnetic field, which increases the probability of non-resonantly excited electrons being trapped by localized potentials at the wetting layer interface, and results in fewer electrons distributed in the quantum dots. The hole drift velocity is also affected by the magnetic field, but it is much weaker. △ Less

Submitted 30 July, 2014; originally announced July 2014.

Comments: 14 pages, 4 figures

Journal ref: Appl. Phys. Lett. 105, 041109 (2014)

GHz photon-activated hopping between localized states in a silicon quantum dot

Authors: T. Ferrus, A. Rossi, A. Andreev, T. Kodera, T. Kambara, W. Lin, S. Oda, D. A. Williams

Abstract: We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to… ▽ More We discuss the effects of gigahertz photon irradiation on a degenerately phosphorous-doped silicon quantum dot, in particular, the creation of voltage offsets on gate leads and the tunneling of one or two electrons via Coulomb blockade lifting at 4.2K. A semi-analytical model is derived that explains the main features observed experimentally. Ultimately both effects may provide an efficient way to optically control and operate electrically isolated structures by microwave pulses. In quantum computing architectures, these results may lead to the use of microwave multiplexing to manipulate quantum states in a multi-qubit configuration. △ Less

Submitted 19 December, 2013; originally announced December 2013.

Comments: New Journal of Physics, in press

Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots

Authors: M. F. Gonzalez-Zalba, J. Galibert, F. Iacovella, D. Williams, T. Ferrus

Abstract: We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the conductance due to the destruction of weak localization whereas at higher fields, where the magnetic field length becomes comparable to the effective Bohr radius of ph… ▽ More We present data on the electrical transport properties of highly-doped silicon-on-insulator quantum dots under the effect of pulsed magnetic fields up to 48 T. At low field intensities, B<7 T, we observe a strong modification of the conductance due to the destruction of weak localization whereas at higher fields, where the magnetic field length becomes comparable to the effective Bohr radius of phosphorous in silicon, a strong decrease in conductance is demonstrated. Data in the high and low electric field bias regimes are then compared to show that close to the Coulomb blockade edge magnetically-induced quenching to single donors in the quantum dot is achieved at about 40 T. △ Less

Submitted 18 November, 2013; originally announced November 2013.

Comments: accepted for publication at Current Applied Physics

Spin and Orbital Splitting in Ferromagnetic Contacted Single Wall Carbon Nanotube Devices

Authors: K. Y. Wang, A. M. Blackburn, H. F. Wang, J. Wunderlich, D. A. Williams

Abstract: We observed the coulomb blockade phenomena in ferromagnetic contacting single wall semiconducting carbon nanotube devices. No obvious Coulomb peaks shift was observed with existing only the Zeeman splitting at 4K. Combining with other effects, the ferromagnetic leads prevent the orbital spin states splitting with magnetic field up to 2 Tesla at 4K. With increasing magnetic field further, both posi… ▽ More We observed the coulomb blockade phenomena in ferromagnetic contacting single wall semiconducting carbon nanotube devices. No obvious Coulomb peaks shift was observed with existing only the Zeeman splitting at 4K. Combining with other effects, the ferromagnetic leads prevent the orbital spin states splitting with magnetic field up to 2 Tesla at 4K. With increasing magnetic field further, both positive or negative coulomb peaks shift slopes are observed associating with clockwise and anticlockwise orbital state splitting. The strongly suppressed/enhanced of the conductance has been observed associating with the magnetic field induced orbital states splitting/converging. △ Less

Submitted 6 March, 2013; originally announced March 2013.

Journal ref: APPLIED PHYSICS LETTERS 102, 093508 (2013)

Temperature-concentration phase diagram of (Ca1-xLax)10(Pt3As8)(Fe2As2)5 superconductors

Authors: N. Ni, W. E. Straszheim, D. J. Williams, M. A. Tanatar, R. Prozorov, E. D. Bauer, F. Ronning, J. D. Thompson, R. J. Cava

Abstract: Single crystals of (Ca1-xLax)10(Pt3As8)(Fe2As2)5 (x = 0 to 0.182) superconductors have been grown and characterized by X-ray, microprobe, transport and thermodynamic measurements. Features in the magnetic susceptibility, specific heat and two kinks in the derivative of the electrical resistivity around 100 K in the x = 0 compound support the existence of decoupled structural and magnetic phase tra… ▽ More Single crystals of (Ca1-xLax)10(Pt3As8)(Fe2As2)5 (x = 0 to 0.182) superconductors have been grown and characterized by X-ray, microprobe, transport and thermodynamic measurements. Features in the magnetic susceptibility, specific heat and two kinks in the derivative of the electrical resistivity around 100 K in the x = 0 compound support the existence of decoupled structural and magnetic phase transitions. With La doping, the structural/magnetic phase transitions are suppressed and a half-dome of superconductivity with a maximal Tc around 26 K is observed in the temperature-concentration phase diagram. △ Less

Submitted 18 December, 2012; v1 submitted 17 December, 2012; originally announced December 2012.

Comments: The affiliations are corrected. Arxiv number for reference 10 is added

Journal ref: Phys. Rev. B 87, 060507 (2013) (Rapid Communications)

Magnetocaloric effect in Gd/W thin film heterostructures

Authors: Casey W. Miller, D. V. Williams, N. S. Bingham, H. Srikanth

Abstract: In an effort to understand the impact of nanostructuring on the magnetocaloric effect, we have grown and studied gadolinium in MgO/W(50 $\textrmÅ$)/[Gd(400 $\textrmÅ$)/W(50 $\textrmÅ$)]$_8$ heterostructures. The entropy change associated with the second order magnetic phase transition was determined from the isothermal magnetization for numerous temperatures and the appropriate Maxwell relation. T… ▽ More In an effort to understand the impact of nanostructuring on the magnetocaloric effect, we have grown and studied gadolinium in MgO/W(50 $\textrmÅ$)/[Gd(400 $\textrmÅ$)/W(50 $\textrmÅ$)]$_8$ heterostructures. The entropy change associated with the second order magnetic phase transition was determined from the isothermal magnetization for numerous temperatures and the appropriate Maxwell relation. The entropy change peaks at a temperature of 284 K with a value of approximately 3.4 J/kg-K for a 0-30 kOe field change; the full width at half max of the entropy change peak is about 70 K, which is significantly wider than that of bulk Gd under similar conditions. The relative cooling power of this nanoscale system is about 240 J/kg, somewhat lower than that of bulk Gd (410 J/kg). An iterative Kovel-Fisher method was used to determine the critical exponents governing the phase transition to be $β=0.51$, and $γ=1.75$. Along with a suppressed Curie temperature relative to the bulk, the fact that the convergent value of $γ$ is that predicted by the 2-D Ising model may suggest that finite size effects play an important role in this system. Together, these observations suggest that nanostructuring may be a promising route to tailoring the magnetocaloric response of materials. △ Less

Submitted 15 December, 2011; originally announced December 2011.

Journal ref: J. Appl. Phys. 107, 09A903 (2010)

Electron temperature in electrically isolated Si double quantum dots

Authors: A. Rossi, T. Ferrus, D. A. Williams

Abstract: Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate… ▽ More Charge-based quantum computation can be attained through reliable control of single electrons in lead-less quantum systems. Single-charge transitions in electrically-isolated double quantum dots (DQD) realised in phosphorus-doped silicon can be detected via capacitively coupled single-electron tunnelling devices. By means of time-resolved measurements of the detector's conductance, we investigate the dots' occupancy statistics in temperature. We observe a significant reduction of the effective electron temperature in the DQD as compared to the temperature in the detector's leads. This sets promises to make isolated DQDs suitable platforms for long-coherence quantum computation. △ Less

Submitted 22 February, 2012; v1 submitted 14 December, 2011; originally announced December 2011.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 100, 133503 (2012)

Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots

Authors: T. Ferrus, A. Rossi, W. Lin, D. A. Williams, T. Kodera, S. Oda

Abstract: We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow… ▽ More We have observed a negative differential conductance with singular gate and source-drain bias dependences in a phosphorus-doped silicon quantum dot. Its origin is discussed within the framework of weak localization. By measuring the current-voltage characteristics at different temperatures as well as simulating the tunneling rates dependences on energy, we demonstrate that the presence of shallow energy defects together with an enhancement of localization satisfactory explain our observations. Effects observed in magnetic fields are also discussed. △ Less

Submitted 25 April, 2012; v1 submitted 22 September, 2011; originally announced September 2011.

Comments: 15 pages

Journal ref: AIP Advances 2, 2, 022114 (2012)

Voltage-controlled electron tunnelling from a single self-assembled quantum dot embedded in a two-dimensional-electron-gas-based photovoltaic cell

Authors: J. D. Mar, X. L. Xu, J. J. Baumberg, A. C. Irvine, C. Stanley, D. A. Williams

Abstract: We perform high-resolution photocurrent (PC) spectroscopy to investigate resonantly the neutral exciton ground-state (X0) in a single InAs/GaAs self-assembled quantum dot (QD) embedded in the intrinsic region of an n-i-Schottky photodiode based on a two-dimensional electron gas (2DEG), which was formed from a Si delta-doped GaAs layer. Using such a device, a single-QD PC spectrum of X0 is measured… ▽ More We perform high-resolution photocurrent (PC) spectroscopy to investigate resonantly the neutral exciton ground-state (X0) in a single InAs/GaAs self-assembled quantum dot (QD) embedded in the intrinsic region of an n-i-Schottky photodiode based on a two-dimensional electron gas (2DEG), which was formed from a Si delta-doped GaAs layer. Using such a device, a single-QD PC spectrum of X0 is measured by sweeping the bias-dependent X0 transition energy through that of a fixed narrow-bandwidth laser via the quantum-confined Stark effect (QCSE). By repeating such a measurement for a series of laser energies, a precise relationship between the X0 transition energy and bias voltage is then obtained. Taking into account power broadening of the X0 absorption peak, this allows for high-resolution measurements of the X0 homogeneous linewidth and, hence, the electron tunnelling rate. The electron tunnelling rate is measured as a function of the vertical electric field and described accurately by a theoretical model, yielding information about the electron confinement energy and QD height. We demonstrate that our devices can operate as 2DEG-based QD photovoltaic cells and conclude by proposing two optical spintronic devices that are now feasible. △ Less

Submitted 7 June, 2011; originally announced June 2011.

Comments: 34 pages, 11 figures

Thermal Expansion in 3d-Metal Prussian Blue Analogs - A Survey Study

Authors: Sourav Adak, Luke L. Daemen, Monika Hartl, Darrick Williams, Jennifer Summerhill, Heinz Nakotte

Abstract: We present a comprehensive study of the structural properties and the thermal expansion behavior of 17 different Prussian Blue Analogs (PBAs) with compositions MII3[(M')III(CN)6]2.nH2O and MII2[FeII(CN)6].nH2O, where MII = Mn, Fe, Co, Ni, Cu and Zn, (M')III = Co, Fe and n is the number of water molecules, which range from 5 to 18 for these compounds. The PBAs were synthesized via standard chemical… ▽ More We present a comprehensive study of the structural properties and the thermal expansion behavior of 17 different Prussian Blue Analogs (PBAs) with compositions MII3[(M')III(CN)6]2.nH2O and MII2[FeII(CN)6].nH2O, where MII = Mn, Fe, Co, Ni, Cu and Zn, (M')III = Co, Fe and n is the number of water molecules, which range from 5 to 18 for these compounds. The PBAs were synthesized via standard chemical precipitation methods, and temperature-dependent X-ray diffraction studies were performed in the temperature range between -150oC (123 K) and room-temperature. The vast majority of the studied PBAs were found to crystallize in cubic structures of space groups, and . The temperature dependence of the lattice parameters was taken to compute an average coefficient of linear thermal expansion in the studied temperature range. Of the 17 compounds, 9 display negative values for the average coefficient of linear thermal expansion, which can be as large as 39.7 x 10-6 K-1 for Co3[Co(CN)6]2.12H2O. All of the MII3[CoIII(CN)6]2.nH2O compounds show negative thermal expansion behavior, which correlates with the Irving-Williams series for metal complex stability. The thermal expansion behavior for the PBAs of the MII3[FeIII(CN)6]2.nH2O family are found to switch between positive (for M = Mn, Co, Ni) and negative (M = Cu, Zn) behavior, depending on the choice of the metal cation (M). On the other hand, all of the MII2[FeII(CN)6].nH2O compounds show positive thermal expansion behavior. △ Less

Submitted 15 August, 2011; v1 submitted 18 April, 2011; originally announced April 2011.

Comments: Submitted, 32 pages, 3 tables, 10 figures

Detection of variable tunneling rates in silicon quantum dots

Authors: A. Rossi, T. Ferrus, W. Lin, T. Kodera, D. A. Williams, S. Oda

Abstract: Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that th… ▽ More Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a capacitively coupled single-electron tunneling device made of the same material. Besides accurate counting of tunneling events in the QD, we demonstrate that this architecture can be operated to reveal asymmetries in the transport characteristic of the QD. Indeed, the observation of gate voltage shifts in the detector's response as the QD bias is changed is an indication of variable tunneling rates. △ Less

Submitted 14 February, 2011; originally announced February 2011.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 98, 133506 (2011)

Transfer Printing Approach to All-Carbon Nanoelectronics

Authors: V. K. Sangwan, A. Southard, T. L. Moore, V. W. Ballarotto, D. R. Hines, M. S. Fuhrer, E. D. Williams

Abstract: Transfer printing methods are used to pattern and assemble monolithic carbon nanotube (CNT) thin-film transistors on large-area transparent, flexible substrates. Airbrushed CNT thin-films with sheet resistance 1kOhmsquare^{-1} at 80% transparency were used as electrodes, and high quality chemical vapor deposition (CVD)-grown CNT networks were used as the semiconductor component. Transfer printing… ▽ More Transfer printing methods are used to pattern and assemble monolithic carbon nanotube (CNT) thin-film transistors on large-area transparent, flexible substrates. Airbrushed CNT thin-films with sheet resistance 1kOhmsquare^{-1} at 80% transparency were used as electrodes, and high quality chemical vapor deposition (CVD)-grown CNT networks were used as the semiconductor component. Transfer printing was used to pre-pattern and assemble thin film transistors on polyethylene terephthalate (PET) substrates which incorporated Al_{2}O_{3}/poly-methylmethacrylate (PMMA) dielectric bi-layer. CNT-based ambipolar devices exhibit field-effect mobility in range 1 - 33 cm^{2}/Vs and on/off ratio ~10^{3}, comparable to the control devices fabricated using Au as the electrode material. △ Less

Submitted 14 November, 2010; originally announced November 2010.

Comments: 17 pages, 4 figures

Coulomb Oscillations of Indium-doped ZnO Nanowire Transistors in a Magnetic Field

Authors: Xiulai Xu, Andrew C. Irvine, Yang Yang, Xitian Zhang, David A. Williams

Abstract: We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase of oscillati… ▽ More We report on the observation of Coulomb oscillations from localized quantum dots superimposed on the normal hopping current in ZnO nanowire transistors. The Coulomb oscillations can be resolved up to 20 K. Positive anisotropic magnetoresistance has been observed due to the Lorentz force on the carrier motion. Magnetic field-induced tunneling barrier transparency results in an increase of oscillation amplitude with increasing magnetic field. The energy shift as a function of magnetic field indicates electron wavefunction modification in the quantum dots. △ Less

Submitted 5 November, 2010; v1 submitted 22 October, 2010; originally announced October 2010.

Comments: 16 pages, 6 figures

Journal ref: Physical Review B 82, 195309 (2010)

Charge Detection in Phosphorus-doped Silicon Double Quantum Dots

Authors: A. Rossi, T. Ferrus, G. J. Podd, D. A. Williams

Abstract: We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD. Measurements performed at 4.2K show step-like behaviour and shifts of the Coulomb Blockade oscillations in the detector's current as the reservoir's potential… ▽ More We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electron transistor (SET) patterned in close proximity to the DQD. Measurements performed at 4.2K show step-like behaviour and shifts of the Coulomb Blockade oscillations in the detector's current as the reservoir's potential is swept. By means of a classical capacitance model, we demonstrate that the observed features can be used to detect single-electron tunnelling from, to and within the DQD, as well as to reveal the DQD charge occupancy. △ Less

Submitted 9 August, 2010; originally announced August 2010.

Comments: 4 pages, 3 figures

Journal ref: Applied Physics Letters 97, 223506 (2010)

High-fidelity conformation of graphene to SiO2 topographic features

Authors: William G. Cullen, Mahito Yamamoto, Kristen M. Burson, Jianhao Chen, Chaun Jang, Liang Li, Michael S. Fuhrer, Ellen D. Williams

Abstract: Strain engineering of graphene through interaction with a patterned substrate offers the possibility of tailoring its electronic properties, but will require detailed understanding of how graphene's morphology is determined by the underlying substrate. However, previous experimental reports have drawn conflicting conclusions about the structure of graphene on SiO2. Here we show that high-resolutio… ▽ More Strain engineering of graphene through interaction with a patterned substrate offers the possibility of tailoring its electronic properties, but will require detailed understanding of how graphene's morphology is determined by the underlying substrate. However, previous experimental reports have drawn conflicting conclusions about the structure of graphene on SiO2. Here we show that high-resolution non-contact atomic force microscopy of SiO2 reveals roughness at the few-nm length scale unresolved in previous measurements, and scanning tunneling microscopy of graphene on SiO2 shows it to be slightly smoother than the supporting SiO2 substrate. Quantitative analysis of the competition between bending rigidity of the graphene and adhesion to the substrate explains the observed roughness of monolayer graphene on SiO2 as extrinsic, and provides a natural, intuitive description in terms of highly conformal adhesion. The analysis indicates that graphene adopts the conformation of the underlying substrate down to the smallest features with nearly 99% fidelity. △ Less

Submitted 27 July, 2010; originally announced July 2010.

Comments: 13 pages, 3 figures plus supplemental information

Quantum Hall induced currents and the magnetoresistance of a quantum point contact

Authors: M. J. Smith, C. D. H. Williams, A. Usher, A. S. Sachrajda, A. Kam, Z. R. Wasilewski

Abstract: We report an investigation of quantum Hall induced currents by simultaneous measurements of their magnetic moment and their effect on the conductance of a quantum point contact (QPC). Features in the magnetic moment and QPC resistance are correlated at Landau-level filling factors nu=1, 2 and 4, which demonstrates the common origin of the effects. Temperature and non-linear sweep rate dependences… ▽ More We report an investigation of quantum Hall induced currents by simultaneous measurements of their magnetic moment and their effect on the conductance of a quantum point contact (QPC). Features in the magnetic moment and QPC resistance are correlated at Landau-level filling factors nu=1, 2 and 4, which demonstrates the common origin of the effects. Temperature and non-linear sweep rate dependences are observed to be similar for the two effects. Furthermore, features in the noise of the induced currents, caused by breakdown of the quantum Hall effect, are observed to have clear correlations between the two measurements. In contrast, there is a distinct difference in the way that the induced currents decay with time when the sweeping field halts at integer filling factor. We attribute this difference to the fact that, while both effects are sensitive to the magnitude of the induced current, the QPC resistance is also sensitive to the proximity of the current to the QPC split-gate. Although it is clearly demonstrated that induced currents affect the electrostatics of a QPC, the reverse effect, the QPC influencing the induced current, was not observed. △ Less

Submitted 21 July, 2010; originally announced July 2010.

Current-driven domain wall motion across a wide temperature range in a (Ga,Mn)(As,P) device

Authors: K. Y. Wang, K. W. Edmonds, A. C. Irvine, G. Tatara, E. De Ranieri, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, B. L. Gallagher

Abstract: Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be compar… ▽ More Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This is enabled by a much weaker domain wall pinning compared to (Ga,Mn)As layers grown on a strain-relaxed buffer layer. The critical current is shown to be comparable with theoretical predictions. The wide temperature range over which domain wall motion can be achieved indicates that this is a promising system for developing an improved understanding of spin-transfer torque in systems with strong spin-orbit interaction. △ Less

Submitted 30 December, 2010; v1 submitted 6 May, 2010; originally announced May 2010.

Comments: 12 pages, 3 figures

Journal ref: APPLIED PHYSICS LETTERS 97, 262102 (2010)

Highly sensitive, photon number resolving detectors mediated by phonons using $δ$-doped GaAs transistors

Authors: Xiulai Xu, Hugh Baker, David A. Williams

Abstract: We report a photon number resolving detector using two-dimensional electron gas (2DEG) based transistors. When the photon pulses impinge on the absorption region, the generated phonons dissipate ballistically in the 2DEG toward the trench isolated nanowire transistors near the surface. The phonon-electron interaction induces a positive conductance in the transistors, resulting in a current increas… ▽ More We report a photon number resolving detector using two-dimensional electron gas (2DEG) based transistors. When the photon pulses impinge on the absorption region, the generated phonons dissipate ballistically in the 2DEG toward the trench isolated nanowire transistors near the surface. The phonon-electron interaction induces a positive conductance in the transistors, resulting in a current increase. With this principle, we obtain an internal quantum efficiency for this type of detector of up to 85%. △ Less

Submitted 3 May, 2010; originally announced May 2010.

Comments: 15 pages, 5 figures

Journal ref: Nano Lett., 2010, 10 (4), pp 1364-1368

Optimizing Transistor Performance of Percolating Carbon Nanotube Networks

Authors: V. K. Sangwan, A. Behnam, V. W. Ballarotto, M. S. Fuhrer, A. Ural, E. D. Williams

Abstract: In percolating networks of mixed metallic and semiconducting CNTs, there is a tradeoff between high on-current (dense networks) and high on/off ratio (sparse networks in which the metallic CNT fraction is not percolating). Experiments on devices in a transistor configuration and Monte Carlo simulations were performed to determine the scaling behavior of device resistivity as a function of channel… ▽ More In percolating networks of mixed metallic and semiconducting CNTs, there is a tradeoff between high on-current (dense networks) and high on/off ratio (sparse networks in which the metallic CNT fraction is not percolating). Experiments on devices in a transistor configuration and Monte Carlo simulations were performed to determine the scaling behavior of device resistivity as a function of channel length (L) for CNT density p in the range 0.04 - 1.29 CNT/μm^2 in the on- and off-states. Optimized devices with field-effect mobility up to 50 cm^2/Vs at on/off ratio > 10^3 were obtained at W = 50 μm, L > 70 μm for p = 0.54 - 0.81 CNTs/μm^2. △ Less

Submitted 22 April, 2010; originally announced April 2010.

Tunable Kondo Effect in Graphene with Defects

Authors: Jian-Hao Chen, W. G. Cullen, E. D. Williams, M. S. Fuhrer

Abstract: Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to superconductivity4. However, the coupling of conduction electrons to local magnetic moments5, 6, a central problem of condensed matter physics, has not been realized in graph… ▽ More Graphene is a model system for the study of electrons confined to a strictly two-dimensional layer1 and a large number of electronic phenomena have been demonstrated in graphene, from the fractional2, 3 quantum Hall effect to superconductivity4. However, the coupling of conduction electrons to local magnetic moments5, 6, a central problem of condensed matter physics, has not been realized in graphene, and, given carbon's lack of d or f electrons, magnetism in graphene would seem unlikely. Nonetheless, magnetism in graphitic carbon in the absence of transition-metal elements has been reported7-10, with explanations ranging from lattice defects11 to edge structures12, 13 to negative curvature regions of the graphene sheet14. Recent experiments suggest that correlated defects in highly-ordered pyrolytic graphite (HOPG) induced by proton irradiation9 or native to grain boundaries7, can give rise to ferromagnetism. Here we show that point defects (vacancies) in graphene15 are local moments which interact strongly with the conduction electrons through the Kondo effect6, 16-18 providing strong evidence that defects in graphene are indeed magnetic. The Kondo temperature TK is tunable with carrier density from 30-90 K; the high TK is a direct consequence of strong coupling of defects to conduction electrons in a Dirac material18. The results indicate that defect engineering in graphene could be used to generate and control carrier-mediated magnetism, and realize all-carbon spintronic devices. Furthermore, graphene should be an ideal system in which to probe Kondo physics in a widely tunable electron system. △ Less

Submitted 4 March, 2011; v1 submitted 20 April, 2010; originally announced April 2010.

Comments: 22 pages, 7 figures (4 in main text, 3 in supplementary information), to appear in Nature Physics

Controlled Growth, Patterning and Placement of Carbon Nanotube Thin Films

Authors: V. K. Sangwan, V. W. Ballarotto, D. R. Hines, M. S. Fuhrer, E. D. Williams

Abstract: Controlled growth, patterning and placement of carbon nanotube (CNT) thin films for electronic applications are demonstrated. The density of CNT films is controlled by optimizing the feed gas composition as well as the concentration of growth catalyst in a chemical vapor deposition process. Densities of CNTs ranging from 0.02 CNTs/μm^2 to 1.29 CNTs/μm^2 are obtained. The resulting pristine CNT t… ▽ More Controlled growth, patterning and placement of carbon nanotube (CNT) thin films for electronic applications are demonstrated. The density of CNT films is controlled by optimizing the feed gas composition as well as the concentration of growth catalyst in a chemical vapor deposition process. Densities of CNTs ranging from 0.02 CNTs/μm^2 to 1.29 CNTs/μm^2 are obtained. The resulting pristine CNT thin films are then successfully patterned using either pre-growth or post-growth techniques. By developing a layered photoresist process that is compatible with ferric nitrate catalyst, significant improvements over popular pre-growth patterning methods are obtained. Limitations of traditional post-growth patterning methods are circumvented by selective transfer printing of CNTs with either thermoplastic or metallic stamps. Resulting as-grown patterns of CNT thin films have edge roughness (< 1 μm) and resolution (< 5 μm) comparable to standard photolithography. Bottom gate CNT thin film devices are fabricated with field-effect mobilities up to 20 cm^2/Vs and on/off ratios of the order of 10^3. The patterning and transfer printing methods discussed here have a potential to be generalized to include other nanomaterials in new device configurations. △ Less

Submitted 19 April, 2010; originally announced April 2010.

Strongly coupled single quantum dot in a photonic crystal waveguide cavity

Authors: F. S. F. Brossard, X. L. Xu, D. A. Williams, M. Hadjipanayi, M. Hopkinson, X. Wang, R. A. Taylor

Abstract: Cavities embedded in photonic crystal waveguides offer a promising route towards large scale integration of coupled resonators for quantum electrodynamics applications. In this letter, we demonstrate a strongly coupled system formed by a single quantum dot and such a photonic crystal cavity. The resonance originating from the cavity is clearly identified from the photoluminescence mapping of the o… ▽ More Cavities embedded in photonic crystal waveguides offer a promising route towards large scale integration of coupled resonators for quantum electrodynamics applications. In this letter, we demonstrate a strongly coupled system formed by a single quantum dot and such a photonic crystal cavity. The resonance originating from the cavity is clearly identified from the photoluminescence mapping of the out-of-plane scattered signal along the photonic crystal waveguide. The quantum dot exciton is tuned towards the cavity mode by temperature control. A vacuum Rabi splitting of ~ 140 \mueV is observed at resonance. △ Less

Submitted 26 March, 2010; originally announced March 2010.

Comments: 11 pages, 3 figures

Charge Sensing in Intrinsic Silicon Quantum Dots

Authors: G. J. Podd, S. J. Angus, D. A. Williams, A. J. Ferguson

Abstract: We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many e… ▽ More We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatically formed in bulk silicon using surface gates. We show that as an additional electron is added onto the quantum dot, a charge is induced on the SET of approximately 0.2e. These measurements are performed in the many electron regime, where we can count in excess of 20 charge additions onto the quantum dot. △ Less

Submitted 11 February, 2010; originally announced February 2010.

Comments: To be published in Appl. Phys. Lett

Journal ref: Appl. Phys. Lett. 96, 082104 (2010)

Domain Wall Resistance in Perpendicular (Ga,Mn)As: dependence on pinning

Authors: K. Y. Wang, K. W. Edmonds, A. C. Irvine, J. Wunderlich, K. Olejnik, A. W. Rushforth, R. P. Campion, D. A. Williams, C. T. Foxon, B. L. Gallagher

Abstract: We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines i… ▽ More We have investigated the domain wall resistance for two types of domain walls in a (Ga,Mn)As Hall bar with perpendicular magnetization. A sizeable positive intrinsic DWR is inferred for domain walls that are pinned at an etching step, which is quite consistent with earlier observations. However, much lower intrinsic domain wall resistance is obtained when domain walls are formed by pinning lines in unetched material. This indicates that the spin transport across a domain wall is strongly influenced by the nature of the pinning. △ Less

Submitted 29 December, 2010; v1 submitted 15 January, 2010; originally announced January 2010.

Comments: 9 pages, 3 figures

Journal ref: J. Magn. Magn. Mater 322,3481(2010)

Facile fabrication of suspended as-grown carbon nanotube devices

Authors: V. K. Sangwan, V. W. Ballarotto, M. S. Fuhrer, E. D. Williams

Abstract: A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended nanotubes and reproducing devices multiple times on the same electrode set. Suspending the carbon nano… ▽ More A simple scalable scheme is reported for fabricating suspended carbon nanotube field effect transistors (CNT-FETs) without exposing pristine as-grown carbon nanotubes to subsequent chemical processing. Versatility and ease of the technique is demonstrated by controlling the density of suspended nanotubes and reproducing devices multiple times on the same electrode set. Suspending the carbon nanotubes results in ambipolar transport behavior with negligible hysteresis. The Hooges constant of the suspended CNT-FETs (2.6 x 10-3) is about 20 times lower than for control CNT-FETs on SiO2 (5.6 x 10-2). △ Less

Submitted 20 September, 2009; originally announced September 2009.

Comments: 15 pages, 4 figures

Journal ref: V. K. Sangwan, V. W. Ballarotto, M. S. Fuhrer, and E. D. Williams, "Facile fabrication of suspended as-grown carbon nanotube devices," Applied Physics Letters 93 (11) (2008)

Charged impurity scattering in bilayer graphene

Authors: Shudong Xiao, Jian-Hao Chen, Shaffique Adam, Ellen D. Williams, Michael S. Fuhrer

Abstract: We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature. Charged impurity scattering gives a conductivity which is supra-linear in carrier density, with a magnitude similar to single-layer graphene for the measured range of carrier densities of 2-4 x 10^12 cm^-2. Upon addit… ▽ More We have examined the impact of charged impurity scattering on charge carrier transport in bilayer graphene (BLG) by deposition of potassium in ultra-high vacuum at low temperature. Charged impurity scattering gives a conductivity which is supra-linear in carrier density, with a magnitude similar to single-layer graphene for the measured range of carrier densities of 2-4 x 10^12 cm^-2. Upon addition of charged impurities of concentration n_imp, the minimum conductivity Sigma_min decreases proportional to n_imp^-1/2, while the electron and hole puddle carrier density increases proportional to n_imp^1/2. These results for the intentional deposition of potassium on BLG are in good agreement with theoretical predictions for charged impurity scattering. However, our results also suggest that charged impurity scattering alone cannot explain the observed transport properties of pristine BLG on SiO2 before potassium doping. △ Less

Submitted 13 December, 2009; v1 submitted 10 August, 2009; originally announced August 2009.

Journal ref: Phys. Rev. B 82, 041406 (2010)

Detection of charge motion in a non-metallic silicon isolated double quantum dot

Authors: T. Ferrus, A. Rossi, M. Tanner, G. Podd, P. Chapman, D. A. Williams

Abstract: As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here we have investigated the mechanism behind the detection of electron motion… ▽ More As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here we have investigated the mechanism behind the detection of electron motion inside an electrically isolated double quantum dot that is capacitively coupled to a single electron transistor, both fabricated from highly phosphorous doped silicon wafers. Despite, the absence of a direct charge transfer between the detector and the double dot structure, an efficient detection is obtained. In particular, unusually large Coulomb peak shifts in gate voltage are observed. Results are explained in terms of charge rearrangement and the presence of inelastic cotunneling via states at the periphery of the single electron transistor dot. △ Less

Submitted 14 October, 2011; v1 submitted 15 July, 2009; originally announced July 2009.

Journal ref: New J. Phys. 13, 10, 103012 (2011)

Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

Authors: T. Kodera, T. Ferrus, T. Nakaoka, G. Podd, M. Tanner, D. Williams, Y. Arakawa

Abstract: We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor (LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and bot… ▽ More We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor (LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel. △ Less

Submitted 8 May, 2009; originally announced May 2009.

Comments: 5 pages, 4 figures, to appear in Jpn. J. Appl. Phys

Characterizing Voltage Contrast in Photoelectron Emission Microscopy

Authors: Vinod K. Sangwan, Vincent W. Ballarotto, Karen Siegrist, Ellen D. Williams

Abstract: A non-destructive technique for obtaining voltage contrast information with photoelectron emission microscopy (PEEM) is described. Samples consisting of electrically isolated metal lines were used to quantify voltage contrast in PEEM. The voltage contrast behavior is characterized by comparing measured voltage contrast with calculated voltage contrast from two electrostatic models. Measured volt… ▽ More A non-destructive technique for obtaining voltage contrast information with photoelectron emission microscopy (PEEM) is described. Samples consisting of electrically isolated metal lines were used to quantify voltage contrast in PEEM. The voltage contrast behavior is characterized by comparing measured voltage contrast with calculated voltage contrast from two electrostatic models. Measured voltage contrast was found to agree closely with the calculated voltage contrast, demonstrating that voltage contrast in PEEM can be used to probe local voltage information in microelectronic devices in a non-intrusive fashion. △ Less

Submitted 30 April, 2009; originally announced May 2009.

Comments: 26 pages, 8 figures

Cryogenic instrumentation for fast current measurement in a silicon single electron transistor

Authors: T. Ferrus, D. G. Hasko, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, G. A. D. Briggs

Abstract: We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosp… ▽ More We present a realisation of high bandwidth instrumentation at cryogenic temperatures and for dilution refrigerator operation that possesses advantages over methods using radio-frequency single electron transistor or transimpedance amplifiers. The ability for the low temperature electronics to carry out faster measurements than with room temperature electronics is investigated by the use of a phosphorous-doped single-electron transistor. A single-shot technique is successfully implemented and used to observe the real time decay of a quantum state. A discussion on various measurement strategies is presented and the consequences on electron heating and noise are analysed. △ Less

Submitted 2 June, 2010; v1 submitted 21 April, 2009; originally announced April 2009.

Comments: 18 pages, 6 figures, published in J. Appl. Phys

Journal ref: J. Appl. Phys. 106, 033705 (2009)

Defect scattering in graphene

Authors: Jian-Hao Chen, W. G. Cullen, C. Jang, M. S. Fuhrer, E. D. Williams

Abstract: Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is four times larger than for a similar concentration of singly charged imp… ▽ More Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scattering gives a conductivity proportional to charge carrier density, with mobility decreasing as the inverse of the ion dose. The mobility decrease is four times larger than for a similar concentration of singly charged impurities. The minimum conductivity decreases proportional to the mobility to values lower than 4e^2/(pi*h), the minimum theoretical value for graphene free of intervalley scattering. Defected graphene shows a diverging resistivity at low temperature, indicating insulating behavior. The results are best explained by ion-induced formation of lattice defects that result in mid-gap states. △ Less

Submitted 14 March, 2009; originally announced March 2009.

Comments: 16 pages, 5 figures

Journal ref: Physical Review Letters 102, 236805 (2009)

Diffusive Charge Transport in Graphene on SiO2

Authors: J. -H. Chen, C. Jang, M. Ishigami, S. Xiao, E. D. Williams, M. S. Fuhrer

Abstract: We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the effects of charged impurities and short-range scatterers. The results show that charged impurities indeed lead to a conductivity linear in density in graphene,… ▽ More We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic variation of the dielectric environment to differentiate the effects of charged impurities and short-range scatterers. The results show that charged impurities indeed lead to a conductivity linear in density in graphene, with a scattering magnitude that agrees quantitatively with theoretical estimates [1]; increased dielectric screening reduces scattering from charged impurities, but increases scattering from short-range scatterers [2]. We evaluate the effects of the corrugations (ripples) of graphene on SiO2 on transport by measuring the height-height correlation function. The results show that the corrugations cannot mimic long-range (charged impurity) scattering effects, and have too small an amplitude-to-wavelength ratio to significantly affect the observed mobility via short-range scattering [3, 4]. Temperature-dependent measurements show that longitudinal acoustic phonons in graphene produce a resistivity linear in temperature and independent of carrier density [5]; at higher temperatures, polar optical phonons of the SiO2 substrate give rise to an activated, carrier density-dependent resistivity [5]. Together the results paint a complete picture of charge carrier transport in graphene on SiO2 in the diffusive regime. △ Less

Submitted 12 December, 2008; originally announced December 2008.

Comments: 28 pages, 7 figures, submitted to Graphene Week proceedings

Journal ref: Solid State Communications 149, 1080 (2009)

Pentacene islands grown on ultra-thin SiO2

Authors: B. R. Conrad, W. G. Cullen, B. C. Riddick, E. D. Williams

Abstract: Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then used as substrates for room temperature growth of pentacene. The apparent height of the first layer is 1.57 +/- 0.05 nm, indicating standing up pentacene grains in the thin-film phase were formed. Pentacene is molecula… ▽ More Ultra-thin oxide (UTO) films were grown on Si(111) in ultrahigh vacuum at room temperature and characterized by scanning tunneling microscopy. The ultra-thin oxide films were then used as substrates for room temperature growth of pentacene. The apparent height of the first layer is 1.57 +/- 0.05 nm, indicating standing up pentacene grains in the thin-film phase were formed. Pentacene is molecularly resolved in the second and subsequent molecular layers. The measured in-plane unit cell for the pentacene (001) plane (ab plane) is a=0.76+/-0.01 nm, b=0.59+/-0.01 nm, and gamma=87.5+/-0.4 degrees. The films are unperturbed by the UTO's short-range spatial variation in tunneling probability, and reduce its corresponding effective roughness and correlation exponent with increasing thickness. The pentacene surface morphology follows that of the UTO substrate, preserving step structure, the long range surface rms roughness of ~0.1 nm, and the structural correlation exponent of ~1. △ Less

Submitted 15 November, 2008; originally announced November 2008.

Comments: 15 pages, 4 figures

Dynamic interfaces in an organic thin film

Authors: Chenggang Tao, Qiang Liu, Blake C. Riddick, William G. Cullen, Janice Reutt-Robey, John D. Weeks, Ellen D. Williams

Abstract: Low-dimensional boundaries between phases and domains in organic thin films are important in charge transport and recombination. Here, fluctuations of interfacial boundaries in an organic thin film, acridine-9-carboxylic acid (ACA) on Ag(111), have been visualized in real time, and measured quantitatively, using Scanning Tunneling Microscopy. The boundaries fluctuate via molecular exchange with… ▽ More Low-dimensional boundaries between phases and domains in organic thin films are important in charge transport and recombination. Here, fluctuations of interfacial boundaries in an organic thin film, acridine-9-carboxylic acid (ACA) on Ag(111), have been visualized in real time, and measured quantitatively, using Scanning Tunneling Microscopy. The boundaries fluctuate via molecular exchange with exchange time constants of 10-30 ms at room temperature, yielding length mode fluctuations that should yield characteristic f-1/2 signatures for frequencies less than ~100 Hz. Although ACA has highly anisotropic intermolecular interactions, it forms islands that are compact in shape with crystallographically distinct boundaries that have essentially identical thermodynamic and kinetic properties . The physical basis of the modified symmetry is shown to arise from significantly different substrate interactions induced by alternating orientations of successive molecules in the condensed phase. Incorporating this additional set of interactions in a lattice gas model leads to effective multi-component behavior, as in the Blume-Emery-Griffiths (BEG) model, and can straightforwardly reproduce the experimentally observed isotropic behavior. The general multi-component description allows the domain shapes and boundary fluctuations to be tuned from isotropic to highly anisotropic in terms of the balance between intermolecular interactions and molecule-substrate interactions. Key words: Organic thin film, fluctuations, STM, molecular interactions, diffusion kinetics, phase coexistence △ Less

Submitted 12 November, 2008; originally announced November 2008.

Comments: 32 pages, 7 figures

Journal ref: Proceedings of the National Academy of Sciences, Vol. 105, No. 43, 16418-16425 (2008)

Single shot measurement of a silicon single electron transistor

Authors: D. G. Hasko, T. Ferrus, Q. R. Morrissey, S. R. Burge, E. J. Freeman, M. J. French, A. Lam, L. Creswell, R. J. Collier, D. A. Williams, G. A. D. Briggs

Abstract: We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pu… ▽ More We have fabricated a custom cryogenic Complementary Metal-Oxide-Semiconductor (CMOS) integrated circuit that has a higher measurement bandwidth compared with conventional room temperature electronics. This allowed implementing single shot operations and observe the real-time evolution of the current of a phosphorous-doped silicon single electron transistor that was irradiated with a microwave pulse. Relaxation times up to 90 us are observed, suggesting the presence of well isolated electron excitations within the device. It is expected that these are associated with long decoherence time and the device may be suitable for quantum information processing. △ Less

Submitted 21 November, 2008; v1 submitted 5 November, 2008; originally announced November 2008.

Journal ref: Appl. Phys. Lett. 93, 19, 192116 (2008)

Atomic Structure of Graphene on SiO2

Authors: Masa Ishigami, J. H. Chen, W. G. Cullen, M. S. Fuhrer, E. D. Williams

Abstract: We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution STM images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural… ▽ More We employ scanning probe microscopy to reveal atomic structures and nanoscale morphology of graphene-based electronic devices (i.e. a graphene sheet supported by an insulating silicon dioxide substrate) for the first time. Atomic resolution STM images reveal the presence of a strong spatially dependent perturbation, which breaks the hexagonal lattice symmetry of the graphitic lattice. Structural corrugations of the graphene sheet partially conform to the underlying silicon oxide substrate. These effects are obscured or modified on graphene devices processed with normal lithographic methods, as they are covered with a layer of photoresist residue. We enable our experiments by a novel cleaning process to produce atomically-clean graphene sheets. △ Less

Submitted 4 November, 2008; originally announced November 2008.

Comments: 13 pages, 4 figures

Journal ref: NanoLetters 7, 1643-1648, 2007

Ribbon polymers in poor solvents: layering transitions in annular and tubular condensates

Authors: Y. Y. Suzuki, D. R. M. Williams

Abstract: We study the structures of a ribbon or ladder polymer immersed in poor solvents. The anisotropic bending rigidity coupled with the surface tension leads ribbon polymers to spontaneous formation of highly anisotropic condensates in poor solvents. Unlike ordinary flexible polymers these condensates undergo a number of distinct layering transitions as a function of chain length or solvent quality,… ▽ More We study the structures of a ribbon or ladder polymer immersed in poor solvents. The anisotropic bending rigidity coupled with the surface tension leads ribbon polymers to spontaneous formation of highly anisotropic condensates in poor solvents. Unlike ordinary flexible polymers these condensates undergo a number of distinct layering transitions as a function of chain length or solvent quality, and the size of condensates becomes non-monotonic function of chain length. We show that the fluctuations of the condensates are in general small and these condensates are stable. △ Less

Submitted 5 November, 2008; v1 submitted 4 November, 2008; originally announced November 2008.

Comments: 5 pages, 5 figures, visulaize missing figure numbers