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Scaling Behavior of Anisotropy Relaxation in Deformed Polymers
Authors:
Christopher N. Lam,
Wen-Sheng Xu,
Wei-Ren Chen,
Zhe Wang,
Christopher B. Stanley,
Jan-Michael Y. Carrillo,
David Uhrig,
Weiyu Wang,
Kunlun Hong,
Yun Liu,
Lionel Porcar,
Changwoo Do,
Gregory S. Smith,
Bobby G. Sumpter,
Yangyang Wang
Abstract:
Drawing an analogy to the paradigm of quasi-elastic neutron scattering, we present a general approach for quantitatively investigating the spatiotemporal dependence of structural anisotropy relaxation in deformed polymers by using small-angle neutron scattering. Experiments and non-equilibrium molecular dynamics simulations on polymer melts over a wide range of molecular weights reveal that their…
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Drawing an analogy to the paradigm of quasi-elastic neutron scattering, we present a general approach for quantitatively investigating the spatiotemporal dependence of structural anisotropy relaxation in deformed polymers by using small-angle neutron scattering. Experiments and non-equilibrium molecular dynamics simulations on polymer melts over a wide range of molecular weights reveal that their conformational relaxation at relatively high momentum transfer $Q$ and short time can be described by a simple scaling law, with the relaxation rate proportional to $Q$. This peculiar scaling behavior, which cannot be derived from the classical Rouse and tube models, is indicative of a surprisingly weak direct influence of entanglement on the microscopic mechanism of single-chain anisotropy relaxation.
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Submitted 9 May, 2018; v1 submitted 25 February, 2018;
originally announced February 2018.
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Fingerprinting molecular relaxation in deformed polymers
Authors:
Zhe Wang,
Christopher N. Lam,
Wei-Ren Chen,
Weiyu Wang,
Jianning Liu,
Yun Liu,
Lionel Porcar,
Christopher B. Stanley,
Zhichen Zhao,
Kunlun Hong,
Yangyang Wang
Abstract:
The flow and deformation of macromolecules is ubiquitous in nature and industry, and an understanding of this phenomenon at both macroscopic and microscopic length scales is of fundamental and practical importance. Here we present the formulation of a general mathematical framework, which could be used to extract, from scattering experiments, the molecular relaxation of deformed polymers. By combi…
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The flow and deformation of macromolecules is ubiquitous in nature and industry, and an understanding of this phenomenon at both macroscopic and microscopic length scales is of fundamental and practical importance. Here we present the formulation of a general mathematical framework, which could be used to extract, from scattering experiments, the molecular relaxation of deformed polymers. By combining and modestly extending several key conceptual ingredients in the literature, we show how the anisotropic single-chain structure factor can be decomposed by spherical harmonics and experimentally reconstructed from its cross sections on the scattering planes. The resulting wavenumber-dependent expansion coefficients constitute a characteristic fingerprint of the macromolecular deformation, permitting detailed examinations of polymer dynamics at the microscopic level. We apply this approach to survey a long-standing problem in polymer physics regarding the molecular relaxation in entangled polymers after a large step deformation. The classical tube theory of Doi and Edwards predicts a fast chain retraction process immediately after the deformation, followed by a slow orientation relaxation through the reptation mechanism. This chain retraction hypothesis, which is the keystone of the tube theory for macromolecular flow and deformation, was critically examined by analyzing the fine features of the two-dimensional anisotropic spectra from small-angle neutron scattering by entangled polystyrenes. It is shown that the unique scattering patterns associated with the chain retraction mechanism were not experimentally observed. This result calls for a fundamental revision of the current theoretical picture for nonlinear rheological behavior of entangled polymeric liquids.
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Submitted 18 May, 2017; v1 submitted 9 March, 2017;
originally announced March 2017.
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Application of photoreflectance to advanced multilayer structures for photovoltaics
Authors:
D. Fuertes Marrón,
E. Cánovas,
I. Artacho,
C. R. Stanley,
M. Steer,
T. Kaizu,
Y. Shoji,
N. Ahsan,
Y. Okada,
E. Barrigón,
I. Rey-Stolle,
C. Algora,
A. Martí,
A. Luque
Abstract:
Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic properties of semiconductor materials and structures. It is a simple non-destructive and contactless technique which can be used in air at room temperature. We will present experimental results of the characterization carried out by means of PR on different types of advanced photovoltaic (PV) structures, incl…
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Photoreflectance (PR) is a convenient characterization tool able to reveal optoelectronic properties of semiconductor materials and structures. It is a simple non-destructive and contactless technique which can be used in air at room temperature. We will present experimental results of the characterization carried out by means of PR on different types of advanced photovoltaic (PV) structures, including quantum-dot-based prototypes of intermediate band solar cells, quantum-well structures, highly mismatched alloys, and III-V-based multi-junction devices, thereby demonstrating the suitability of PR as a powerful diagnostic tool. Examples will be given to illustrate the value of this spectroscopic technique for PV including (i) the analysis of the PR spectra in search of critical points associated to absorption onsets; (ii) distinguishing signatures related to quantum confinement from those originating from delocalized band states; (iii) determining the intensity of the electric field related to built-in potentials at interfaces according to the Franz-Keldysh (FK) theory; and (v) determining the nature of different oscillatory PR signals among those ascribed to FK-oscillations, interferometric and photorefractive effects. The aim is to attract the interest of researchers in the field of PV to modulation spectroscopies, as they can be helpful in the analysis of their devices.
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Submitted 4 December, 2012;
originally announced December 2012.
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Voltage-controlled electron tunnelling from a single self-assembled quantum dot embedded in a two-dimensional-electron-gas-based photovoltaic cell
Authors:
J. D. Mar,
X. L. Xu,
J. J. Baumberg,
A. C. Irvine,
C. Stanley,
D. A. Williams
Abstract:
We perform high-resolution photocurrent (PC) spectroscopy to investigate resonantly the neutral exciton ground-state (X0) in a single InAs/GaAs self-assembled quantum dot (QD) embedded in the intrinsic region of an n-i-Schottky photodiode based on a two-dimensional electron gas (2DEG), which was formed from a Si delta-doped GaAs layer. Using such a device, a single-QD PC spectrum of X0 is measured…
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We perform high-resolution photocurrent (PC) spectroscopy to investigate resonantly the neutral exciton ground-state (X0) in a single InAs/GaAs self-assembled quantum dot (QD) embedded in the intrinsic region of an n-i-Schottky photodiode based on a two-dimensional electron gas (2DEG), which was formed from a Si delta-doped GaAs layer. Using such a device, a single-QD PC spectrum of X0 is measured by sweeping the bias-dependent X0 transition energy through that of a fixed narrow-bandwidth laser via the quantum-confined Stark effect (QCSE). By repeating such a measurement for a series of laser energies, a precise relationship between the X0 transition energy and bias voltage is then obtained. Taking into account power broadening of the X0 absorption peak, this allows for high-resolution measurements of the X0 homogeneous linewidth and, hence, the electron tunnelling rate. The electron tunnelling rate is measured as a function of the vertical electric field and described accurately by a theoretical model, yielding information about the electron confinement energy and QD height. We demonstrate that our devices can operate as 2DEG-based QD photovoltaic cells and conclude by proposing two optical spintronic devices that are now feasible.
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Submitted 7 June, 2011;
originally announced June 2011.
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Millisecond spin-flip times of donor-bound electrons in GaAs
Authors:
Kai-Mei C. Fu,
Wenzheng Yeo,
Susan Clark,
Charles Santori,
Colin Stanley,
M. C. Holland,
Yoshihisa Yamamoto
Abstract:
We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and me…
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We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs . This is three orders of magnitude larger than previously reported lifetimes in n-GaAs . Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T . This result is in qualitative agreement with previously reported theory and measurements of electrons in quantum dots.
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Submitted 18 October, 2006;
originally announced October 2006.
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Coherent Population Trapping of Electron Spins in a Semiconductor
Authors:
Kai-Mei C. Fu,
Charles Santori,
Colin Stanley,
M. C. Holland,
Yoshihisa Yamamoto
Abstract:
In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our dat…
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In high-purity n-type GaAs under strong magnetic field, we are able to isolate a lambda system composed of two Zeeman states of neutral-donor bound electrons and the lowest Zeeman state of bound excitons. When the two-photon detuning of this system is zero, we observe a pronounced dip in the excited-state photoluminescence indicating the creation of the coherent population-trapped state. Our data are consistent with a steady-state three-level density-matrix model. The observation of coherent population trapping in GaAs indicates that this and similar semiconductor systems could be used for various EIT-type experiments.
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Submitted 25 June, 2007; v1 submitted 31 March, 2005;
originally announced April 2005.
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Electric field switching in a resonant tunneling diode electroabsorption modulator
Authors:
J. M. L. Figueiredo,
C. N. Ironside,
C. R. Stanley
Abstract:
The basic mechanism underlying electric field switching produced by a resonant tunnelling diode (RTD) is analysed and the theory compared with experimental results; agreement to within 12% is achieved. The electro-absorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient…
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The basic mechanism underlying electric field switching produced by a resonant tunnelling diode (RTD) is analysed and the theory compared with experimental results; agreement to within 12% is achieved. The electro-absorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient change, via the Franz-Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve up to 28 dB optical modulation in a 200 um active length device. The advantage of the RTD-EAM, over the conventional reversed biased pn junction EAM, is that the RTD-EAM has in essence an integrated electronic amplifier and therefore requires considerably less switching power.
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Submitted 11 March, 2005;
originally announced March 2005.
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A quantum coherent approach to transport and noise in double barrier resonant diodes: shot noise a way to distinguish coherent from sequential tunneling
Authors:
V. Ya. Aleshkin,
L. Reggiani,
N. V. Alkeev,
V. E. Lyubchenko,
C. N. Ironside,
J. M. L. Figueiredo,
C. R. Stanley
Abstract:
We implement a quantum approach which includes long range Coulomb interaction and investigate current voltage characteristics and shot noise in double barrier resonant diodes. Theory applies to the region of low applied voltages up to the region of the current peak and considers the wide temperature range from zero to room temperature. The shape of the current voltage characteristic is well repr…
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We implement a quantum approach which includes long range Coulomb interaction and investigate current voltage characteristics and shot noise in double barrier resonant diodes. Theory applies to the region of low applied voltages up to the region of the current peak and considers the wide temperature range from zero to room temperature. The shape of the current voltage characteristic is well reproduced and we confirm that even in the presence of Coulomb interaction shot noise can be suppressed with a Fano factor well below the value of 0.5. This feature is a signature of coherent tunnelling since the standard sequential tunnelling predicts in general a Fano factor equal to or greater than the value 0.5. This giant suppression is a consequence of Pauli principle as well as long range Coulomb interaction. The theory generalizes previous findings and is compared with experiments.
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Submitted 11 December, 2003; v1 submitted 3 April, 2003;
originally announced April 2003.
