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Hexagonal boron nitride based photonic quantum technologies
Authors:
Madhava Krishna Prasad,
Mike P. C. Taverne,
Chung-Che Huang,
Jonathan D. Mar,
Ying-Lung Daniel Ho
Abstract:
Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature single-photon emitters. In this review paper we provide an overview of (1) the structure, properties, growth and transfer of hexagonal boron nitride; (2) the creation an…
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Hexagonal boron nitride is rapidly gaining interest as a platform for photonic quantum technologies, due to its two-dimensional nature and its ability to host defects deep within its large band gap that may act as room-temperature single-photon emitters. In this review paper we provide an overview of (1) the structure, properties, growth and transfer of hexagonal boron nitride; (2) the creation and assignment of colour centres in hexagonal boron nitride for applications in photonic quantum technologies; and (3) heterostructure devices for the electrical tuning and charge control of colour centres that form the basis for photonic quantum technology devices. The aim of this review is to provide readers a summary of progress in both defect engineering and device fabrication in hexagonal boron nitride based photonic quantum technologies.
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Submitted 16 July, 2024;
originally announced July 2024.
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Charge transfer due to defects in hexagonal boron nitride/graphene heterostructures: an ab initio study
Authors:
Madhava Krishna Prasad,
Oras A. Al-Ani,
Jonathan P. Goss,
Jonathan D. Mar
Abstract:
Using density functional theory (DFT), we study charge transfer between hexagonal boron nitride (h-BN) point defects and graphene in h-BN/graphene heterostructures for a range of intrinsic defects -- nitrogen vacancy, boron vacancy, nitrogen antisite and boron antisite. We show that traditional methods that calculate charge transfer by spatial discrimination of charge to different atoms suffer fro…
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Using density functional theory (DFT), we study charge transfer between hexagonal boron nitride (h-BN) point defects and graphene in h-BN/graphene heterostructures for a range of intrinsic defects -- nitrogen vacancy, boron vacancy, nitrogen antisite and boron antisite. We show that traditional methods that calculate charge transfer by spatial discrimination of charge to different atoms suffer from the misallocation of charge and introduce an alternative method that relies on the integration of the density of states. We also show that DFT calculations of charge transfer have cell size dependencies due to a change in the density of states in the vicinity of the defect levels. Our results indicate that the nitrogen and boron anitsites do not participate in charge transfer, whereas the nitrogen and boron vacancies experience the transfer of a whole electron. Additionally, we show that a change in the geometry of a defect corresponds to a change in the charge state of the defect. The results of our study will be invaluable for a wide variety of device applications that involve charge transfer between h-BN defects and graphene in h-BN/graphene heterostructures, while our methodology can be feasibly extended to a wide range of point defects and heterostructures.
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Submitted 11 January, 2023;
originally announced January 2023.
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Voltage-controlled electron tunnelling from a single self-assembled quantum dot embedded in a two-dimensional-electron-gas-based photovoltaic cell
Authors:
J. D. Mar,
X. L. Xu,
J. J. Baumberg,
A. C. Irvine,
C. Stanley,
D. A. Williams
Abstract:
We perform high-resolution photocurrent (PC) spectroscopy to investigate resonantly the neutral exciton ground-state (X0) in a single InAs/GaAs self-assembled quantum dot (QD) embedded in the intrinsic region of an n-i-Schottky photodiode based on a two-dimensional electron gas (2DEG), which was formed from a Si delta-doped GaAs layer. Using such a device, a single-QD PC spectrum of X0 is measured…
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We perform high-resolution photocurrent (PC) spectroscopy to investigate resonantly the neutral exciton ground-state (X0) in a single InAs/GaAs self-assembled quantum dot (QD) embedded in the intrinsic region of an n-i-Schottky photodiode based on a two-dimensional electron gas (2DEG), which was formed from a Si delta-doped GaAs layer. Using such a device, a single-QD PC spectrum of X0 is measured by sweeping the bias-dependent X0 transition energy through that of a fixed narrow-bandwidth laser via the quantum-confined Stark effect (QCSE). By repeating such a measurement for a series of laser energies, a precise relationship between the X0 transition energy and bias voltage is then obtained. Taking into account power broadening of the X0 absorption peak, this allows for high-resolution measurements of the X0 homogeneous linewidth and, hence, the electron tunnelling rate. The electron tunnelling rate is measured as a function of the vertical electric field and described accurately by a theoretical model, yielding information about the electron confinement energy and QD height. We demonstrate that our devices can operate as 2DEG-based QD photovoltaic cells and conclude by proposing two optical spintronic devices that are now feasible.
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Submitted 7 June, 2011;
originally announced June 2011.
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Absence of the Rashba effect in undoped asymmetric quantum wells
Authors:
P. S. Eldridge,
W. J. H Leyland,
J. D. Mar,
P. G. Lagoudakis,
R. Winkler,
O. Z. Karimov,
M. Henini,
D Taylor,
R. T. Phillips,
R T Harley
Abstract:
To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction seems to offer the possibility of gate-voltage control in spintronic devices but, as the electrons are subject to both ion-core and macroscopic structural potentials, this over-simple picture has lead…
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To an electron moving in free space an electric field appears as a magnetic field which interacts with and can reorient the electron spin. In semiconductor quantum wells this spin-orbit interaction seems to offer the possibility of gate-voltage control in spintronic devices but, as the electrons are subject to both ion-core and macroscopic structural potentials, this over-simple picture has lead to intense debate. For example, an externally applied field acting on the envelope of the electron wavefunction determined by the macroscopic potential, underestimates the experimentally observed spin-orbit field by many orders of magnitude while the Ehrenfest theorem suggests that it should actually be zero. Here we challenge, both experimentally and theoretically, the widely held belief that any inversion asymmetry of the macroscopic potential, not only electric field, will produce a significant spin-orbit field for electrons. This conclusion has far-reaching consequences for the design of spintronic devices while illuminating important fundamental physics.
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Submitted 30 July, 2008;
originally announced July 2008.
