Showing 1–50 of 55 results for author: Xing, H G

Dualtronics: leveraging both faces of polar semiconductors

Authors: Len van Deurzen, Eungkyun Kim, Naomi Pieczulewski, Zexuan Zhang, Anna Feduniewicz-Zmuda, Mikolaj Chlipala, Marcin Siekacz, David Muller, Huili Grace Xing, Debdeep Jena, Henryk Turski

Abstract: Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium)… ▽ More Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide bandgap semiconductor gallium nitride leads to a large electronic polarization along a unique crystal axis. This makes the two surfaces of the semiconductor wafer perpendicular to the polar axis dramatically different in their physical and chemical properties. In the last three decades, the cation (gallium) face of gallium nitride has been used for photonic devices such as LEDs and lasers. Though the cation face has also been predominantly used for electronic devices, the anion (nitrogen) face has recently shown promise for high electron mobility transistors due to favorable polarization discontinuities. In this work we show that it is possible to make photonic devices on the cation face, and electronic devices on the anion face, of the same semiconductor wafer. This opens the possibility for dualtronics in polar semiconductors, where electronic, photonic, and acoustic properties can be implemented on opposite faces of the same wafer, dramatically enhancing the functional capabilities of this revolutionary semiconductor family. △ Less

Submitted 4 April, 2024; originally announced April 2024.

Accumulation and removal of Si impurities on $β-Ga_2O_3$ arising from ambient air exposure

Authors: J. P. McCandless, C. A. Gorsak, V. Protasenko, D. G. Schlom, Michael O. Thompson, H. G. Xing, D. Jena, H. P. Nair

Abstract: Here we report that the source of Si impurities commonly observed on (010) $β-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) $β-Ga_2O_3$ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affec… ▽ More Here we report that the source of Si impurities commonly observed on (010) $β-Ga_2O_3$ is from exposure of the surface to air. Moreover, we find that a 15 minute HF (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) $β-Ga_2O_3$ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment the sample must be immediately put under vacuum, for the Si fully returns within 10 minutes of additional air exposure. Lastly, we demonstrate that performing a 30 minute HF (49%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent $Ga_2O_3$ growth. △ Less

Submitted 11 December, 2023; originally announced December 2023.

Silicon Implantation and Annealing in $β$-Ga$_2$O$_3$: Role of Ambient, Temperature, and Time

Authors: K. R. Gann, N. Pieczulewski1, C. A. Gorsak, K. Heinselman, T. J. Asel, B. A. Noesges, K. T. Smith, D. M. Dryden, H. G. Xing, H. P. Nair, D. A. Muller, M. O. Thompson

Abstract: Optimizing thermal anneals of Si-implanted $β$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on activation of room temperature ion-implanted Si in $β$-Ga$_2$O$_3$ at concentrations from 5x10$^{18}$ to 1x10$^{20}$ cm$^{-3}$, demonstrating full activation (>80% activation, mobilities >70 cm$^{2}$/Vs) wi… ▽ More Optimizing thermal anneals of Si-implanted $β$-Ga$_2$O$_3$ is critical for low resistance contacts and selective area doping. We report the impact of annealing ambient, temperature, and time on activation of room temperature ion-implanted Si in $β$-Ga$_2$O$_3$ at concentrations from 5x10$^{18}$ to 1x10$^{20}$ cm$^{-3}$, demonstrating full activation (>80% activation, mobilities >70 cm$^{2}$/Vs) with contact resistances below 0.29 $Ω$-mm. Homoepitaxial $β$-Ga$_2$O$_3$ films, grown by plasma assisted MBE on Fe-doped (010) substrates, were implanted at multiple energies to yield 100 nm box profiles of 5x10$^{18}$, 5x10$^{19}$, and 1x10$^{20}$ cm$^{-3}$. Anneals were performed in a UHV-compatible quartz furnace at 1 bar with well-controlled gas composition. To maintain $β$-Ga$_2$O$_3$ stability, $p_{O2}$ must be greater than 10$^{-9}$ bar. Anneals up to $p_{O2}$ = 1 bar achieve full activation at 5x10$^{18}$ cm$^{-3}$, while 5x10$^{19}$ cm$^{-3}$ must be annealed with $p_{O2}$ <10$^{-4}$ bar and 1x10$^{20}$ cm$^{-3}$ requires $p_{O2}$ <10$^{-6}$ bar. Water vapor prevents activation and must be maintained below 10$^{-8}$ bar. Activation is achieved for anneal temperatures as low as 850 °C with mobility increasing with anneal temperature up to 1050 °C, though Si diffusion has been reported above 950 °C. At 950 °C, activation is maximized between 5 and 20 minutes with longer times resulting in decreased carrier activation (over-annealing). This over-annealing is significant for concentrations above 5x10$^{19}$ cm$^{-3}$ and occurs rapidly at 1x10$^{20}$ cm$^{-3}$. RBS (channeling) suggests damage recovery is seeded from remnant aligned $β$-Ga$_2$O$_3$ that remains after implantation; this conclusion is also supported by STEM showing retention of the $β$-phase with inclusions that resemble the $γ$-phase. △ Less

Submitted 1 November, 2023; originally announced November 2023.

Epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN distributed Bragg reflectors

Authors: Len van Deurzen, Thai-Son Nguyen, Joseph Casamento, Huili Grace Xing, Debdeep Jena

Abstract: We demonstrate epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma-enhanced molecular beam epitaxy (PA-MBE). Resulting from a rapid increase of in-plane lattice coefficient as scandium is incorporated into AlScN, we measure a lattice-matched condition to $c$-plane GaN for a Sc content… ▽ More We demonstrate epitaxial lattice-matched Al$_{0.89}$Sc$_{0.11}$N/GaN ten and twenty period distributed Bragg reflectors (DBRs) grown on c-plane bulk n-type GaN substrates by plasma-enhanced molecular beam epitaxy (PA-MBE). Resulting from a rapid increase of in-plane lattice coefficient as scandium is incorporated into AlScN, we measure a lattice-matched condition to $c$-plane GaN for a Sc content of just 11\%, resulting in a large refractive index mismatch $\mathrm{Δn}$ greater than 0.3 corresponding to an index contrast of $\mathrm{Δn/n_{GaN}}$ = 0.12 with GaN. The DBRs demonstrated here are designed for a peak reflectivity at a wavelength of 400 nm reaching a reflectivity of 0.98 for twenty periods. It is highlighted that AlScN/GaN multilayers require fewer periods for a desired reflectivity than other lattice-matched Bragg reflectors such as those based on AlInN/GaN multilayers. △ Less

Submitted 28 September, 2023; originally announced September 2023.

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

Authors: Len van Deurzen, Jashan Singhal, Jimy Encomendero, Naomi Pieczulewski, Celesta Chang, YongJin Cho, David Anthony Muller, Huili Grace Xing, Debdeep Jena, Oliver Brandt, Jonas Lähnemann

Abstract: Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission… ▽ More Using low-temperature cathodoluminescence spectroscopy, we study the properties of N- and Al-polar AlN layers grown by molecular beam epitaxy on bulk AlN{0001}. Compared to the bulk AlN substrate, layers of both polarities feature a suppression of deep-level luminescence, a total absence of the prevalent donor with an exciton binding energy of 28 meV, and a much increased intensity of the emission from free excitons. The dominant donor in these layers is characterized by an associated exciton binding energy of 13 meV. The observation of excited exciton states up to the exciton continuum allows us to directly extract the $Γ_{5}$ free exciton binding energy of 57 meV. △ Less

Submitted 23 July, 2023; v1 submitted 17 May, 2023; originally announced May 2023.

Journal ref: APL Materials 11, 081109 (2023)

Defeating Broken Symmetry with Doping: Symmetric Resonant Tunneling in Noncentrosymetric Heterostructures

Authors: Jimy Encomendero, Vladimir Protasenko, Debdeep Jena, Huili Grace Xing

Abstract: Resonant tunneling transport in polar heterostructures is intimately connected to the polarization fields emerging from the geometric Berry-phase. In these structures, quantum confinement results not only in a discrete electronic spectrum, but also in built-in polarization charges exhibiting a broken inversion symmetry along the transport direction. Thus, electrons undergo highly asymmetric quantu… ▽ More Resonant tunneling transport in polar heterostructures is intimately connected to the polarization fields emerging from the geometric Berry-phase. In these structures, quantum confinement results not only in a discrete electronic spectrum, but also in built-in polarization charges exhibiting a broken inversion symmetry along the transport direction. Thus, electrons undergo highly asymmetric quantum interference effects with respect to the direction of current flow. By employing doping to counter the broken symmetry, we deterministically control the resonant transmission through GaN/AlN resonant tunneling diodes and experimentally demonstrate the recovery of symmetric resonant tunneling injection across the noncentrosymmetric double-barrier potential. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Comments: 6 pages, 4 figures

Journal ref: Physical Review B 107, 125301 (2023)

Fighting Broken Symmetry with Doping: Toward Polar Resonant Tunneling Diodes with Symmetric Characteristics

Authors: Jimy Encomendero, Vladimir Protasenko, Farhan Rana, Debdeep Jena, Huili Grace Xing

Abstract: The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately d… ▽ More The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between fixed polarization charges and mobile free carriers leads to asymmetric transport characteristics. Here, we investigate the possibility of using degenerately doped contact layers to screen the built-in polarization fields and recover symmetric resonant injection. Thanks to a high doping density, negative differential conductance is observed under both bias polarities of GaN/AlN resonant tunneling diodes (RTDs). Moreover, our analytical model reveals a lower bound for the minimum resonant-tunneling voltage achieved via uniform doping, owing to the dopant solubility limit. Charge storage dynamics is also studied by impedance measurements, showing that at close-to-equilibrium conditions, polar RTDs behave effectively as parallel-plate capacitors. These mechanisms are completely reproduced by our analytical model, providing a theoretical framework useful in the design and analysis of polar resonant-tunneling devices. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Comments: 9 pages, 4 figures

Journal ref: Physical Review Applied 13, 034048 (2020)

Broken Symmetry Effects due to Polarization on Resonant Tunneling Transport in Double-Barrier Nitride Heterostructures

Authors: Jimy Encomendero, Vladimir Protasenko, Berardi Sensale-Rodriguez, Patrick Fay, Farhan Rana, Debdeep Jena, Huili Grace Xing

Abstract: The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE. In-situ electron diffraction is employed to monitor the number of monolayers incorporated into each tunneling barrier. Using this precise epitaxial control at the… ▽ More The phenomenon of resonant tunneling transport through polar double-barrier heterostructures is systematically investigated using a combined experimental and theoretical approach. On the experimental side, GaN/AlN RTDs are grown by MBE. In-situ electron diffraction is employed to monitor the number of monolayers incorporated into each tunneling barrier. Using this precise epitaxial control at the monolayer level, we demonstrate exponential modulation of the resonant tunneling current as a function of barrier thickness. Both the peak voltage and characteristic threshold bias exhibit a dependence on barrier thickness as a result of the intense electric fields present in the polar heterostructures. To get further insight into the asymmetric tunneling injection, we present an analytical theory for tunneling transport across polar heterostructures. A general expression for the resonant tunneling current with contributions from coherent and sequential tunneling processes is introduced. After applying this theory to the case of GaN/AlN RTDs, their experimental current-voltage characteristics are reproduced over both bias polarities, with tunneling currents spanning several orders of magnitude. This agreement allows us to elucidate the role played by the internal polarization fields on the magnitude of the tunneling current and broadening of the resonant line shape. Under reverse bias, we identify new tunneling features originating from highly attenuated resonant tunneling phenomena, which are completely captured by our model. Our analytical model, provides a simple expression which reveals the connection between the polar RTD design parameters and its current-voltage characteristics. This new theory paves the way for the design of polar resonant tunneling devices exhibiting efficient resonant current injection and enhanced tunneling dynamics, as required in various practical applications. △ Less

Submitted 15 March, 2023; originally announced March 2023.

Comments: 13 pages, 3 figures

Journal ref: Physical Review Applied 11, 034032 (2019)

FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors

Authors: J. Casamento, K. Nomoto, T. S. Nguyen, H. Lee, C. Savant, L. Li, A. Hickman, T. Maeda, J. Encomendero, V. Gund, A. Lal, J. C. M. Hwang, H. G. Xing, D. Jena

Abstract: We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high… ▽ More We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high K and ferroelectric barriers to date to deliver the highest on currents at 4 A/mm, and highest speed AlScN transistors with fmax larger than 150 GHz observed in any ferroelectric transistor. The FerroHEMTs exhibit hysteretic Id Vgs loops with subthreshold slopes below the Boltzmann limit. A control AlN barrier HEMT exhibits neither hysteretic, nor sub Boltzmann behavior. While these results introduce the first epitaxial high K and ferroelectric barrier technology to RF and mm wave electronics, they are also of interest as a new material platform for combining memory and logic functionalities in digital electronics. △ Less

Submitted 27 February, 2023; originally announced February 2023.

Comments: 4 pages, 8 figures, appeared in IEEE IEDM, December 2022

Journal ref: IEEE IEDM Technical Digest, December 2022

Growth of $α-Ga_2O_3$ on $Al_2O_3$ by conventional molecular-beam epitaxy and metal-oxide-catalyzed epitaxy

Authors: J. P. McCandless, D. Rowe, N. Pieczulewski, V. Protasenko, M. Alonso-Orts, M. S. Williams, M. Eickhoff, H. G. Xing, D. A. Muller, D. Jena, P. Vogt

Abstract: We report the growth of $α-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $α-Ga_2O_3$ (10-10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of… ▽ More We report the growth of $α-Ga_2O_3$ on $m$-plane $Al_2O_3$ by conventional plasma-assisted molecular-beam epitaxy (MBE) and In-mediated metal-oxide-catalyzed epitaxy (MOCATAXY). We report a growth-rate-diagram for $α-Ga_2O_3$ (10-10), and observe (i) a growth rate increase, (ii) an expanded growth window, and (iii) reduced out-of-lane mosaic spread when MOCATAXY is employed for the growth of $α-Ga_2O_3$. Through the use of In-mediated catalysis, growth rates over $0.2\,μ\text{m}\,\text{hr}^{-1}$ and rocking curves with full width at half maxima of $Δω\approx 0.45^{\circ}$ are achieved. Faceting is observed along the $α-Ga_2O_3$ film surface and is explored through scanning transmission electron microscopy. △ Less

Submitted 30 January, 2023; originally announced January 2023.

Silicon-doped $β$-Ga$_2$O$_3$ films grown at 1 $μ$m/h by suboxide molecular-beam epitaxy

Authors: Kathy Azizie, Felix V. E. Hensling, Cameron A. Gorsak, Yunjo Kim, Daniel M. Dryden, M. K. Indika Senevirathna, Selena Coye, Shun-Li Shang, Jacob Steele, Patrick Vogt, Nicholas A. Parker, Yorick A. Birkhölzer, Jonathan P. McCandless, Debdeep Jena, Huili G. Xing, Zi-Kui Liu, Michael D. Williams, Andrew J. Green, Kelson Chabak, Adam T. Neal, Shin Mou, Michael O. Thompson, Hari P. Nair, Darrell G. Schlom

Abstract: We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiti… ▽ More We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $β$-Ga$_2$O$_3$ at a growth rate of ~1 $μ$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the form of a molecular beam that is 99.98\% Ga$_2$O, i.e., gallium suboxide, is supplied. Directly supplying Ga2O to the growth surface bypasses the rate-limiting first step of the two-step reaction mechanism involved in the growth of $β$-Ga$_2$O$_3$ by conventional MBE. As a result, a growth rate of ~1 $μ$m/h is readily achieved at a relatively low growth temperature (T$_{sub}$ = 525 $^\circ$C), resulting in films with high structural perfection and smooth surfaces (rms roughness of < 2 nm on ~1 $μ$m thick films). Silicon-containing oxide sources (SiO and SiO$_2$) producing an SiO suboxide molecular beam are used to dope the $β$-Ga$_2$O$_3$ layers. Temperature-dependent Hall effect measurements on a 1 $μ$m thick film with a mobile carrier concentration of 2.7x10$^{17}$ cm$^{-3}$ reveal a room-temperature mobility of 124 cm$^2$ V$^{-1}$ s$^{-1}$ that increases to 627 cm$^2$ V$^{-1}$ s$^{-1}$ at 76 K; the silicon dopants are found to exhibit an activation energy of 27 meV. We also demonstrate working MESFETs made from these silicon-doped $β$-Ga$_2$O$_3$ films grown by S-MBE at growth rates of ~1 $μ$m/h. △ Less

Submitted 22 December, 2022; originally announced December 2022.

Comments: 19 pages, 7 figures, 2 tables, 2 pages supplementary materials

Molecular Beam Homoepitaxy of N-polar AlN on bulk AlN substrates

Authors: Jashan Singhal, Jimy Encomendero, Yongjin Cho, Len van Deurzen, Zexuan Zhang, Kazuki Nomoto, Masato Toita, Huili Grace Xing, Debdeep Jena

Abstract: N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature helped in removing native surface oxides and impurities from the N-polar surface of the substrate enabling successful homoepitaxy. Subsequent epitaxial growth of A… ▽ More N-polar AlN epilayers were grown on the N-face of single crystal bulk AlN substrates by plasma assisted molecular beam epitaxy (PA-MBE). A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature helped in removing native surface oxides and impurities from the N-polar surface of the substrate enabling successful homoepitaxy. Subsequent epitaxial growth of AlN layer on the in situ cleaned substrates, grown in sufficiently high Al droplet regime, exhibited smooth surface morphologies with clean and wide atomic steps. KOH etch studies confirmed the N-polarity of the homoepitaxial films. Secondary ion mass spectrometry profiles show Si and H impurity concentrations below the noise levels, whereas O and C impurities concentrations of ~ 8x10^{17} atoms/cm^3 and ~ 2x10^{17} atoms/cm^3 are observed respectively. Though the structural defect densities are low, they interestingly appear as inversion domains of different dimensionalities. △ Less

Submitted 22 June, 2022; originally announced June 2022.

N-polar GaN p-n junction diodes with low ideality factors

Authors: Kazuki Nomoto, Huili Grace Xing, Debdeep Jena, YongJin Cho

Abstract: High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V and an ideality factor of 1.6. As the temperature increases to 200 C, the apparent ideality factor gradually approaches 2. At such high temperatures, Shockley-… ▽ More High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current-voltage characteristics reveal a high on/off current ratio of 10^11 at 4 V and an ideality factor of 1.6. As the temperature increases to 200 C, the apparent ideality factor gradually approaches 2. At such high temperatures, Shockley-Read-Hall recombination times of 0.32-0.46 ns are estimated. The measured electroluminescence spectrum is dominated by a strong near-band edge emission, while deep level and acceptor-related luminescence is greatly suppressed. A relatively high reverse breakdown field of 2.4 MV/cm without field-plates is achieved. This work indicates that the quality of N-polar GaN diodes is now approaching to that of their state-of-the-art Ga-polar counterparts. △ Less

Submitted 4 May, 2022; v1 submitted 24 April, 2022; originally announced April 2022.

Comments: 11 pages, 3 figures

Journal ref: Applied Physics Express 15, 064004 (2022)

Molecular beam homoepitaxy of N-polar AlN: enabling role of Al-assisted surface cleaning

Authors: Zexuan Zhang, Yusuke Hayashi, Tetsuya Tohei, Akira Sakai, Vladimir Protasenko, Jashan Singhal, Hideto Miyake, Huili Grace Xing, Debdeep Jena, YongJin Cho

Abstract: N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN templates. Direct growth without any in-situ surface cleaning leads to films with inverted Al-polarity. It is found that Al-assisted cleaning before growth enabl… ▽ More N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN templates. Direct growth without any in-situ surface cleaning leads to films with inverted Al-polarity. It is found that Al-assisted cleaning before growth enables the epitaxial film to maintain N-polarity. The grown N-polar AlN epilayer with its smooth, pit-free surface duplicates the structural quality of the substrate as evidenced by a clean and smooth growth interface with no noticeable extended defects generation. Near band-edge photoluminescence peaks are observed at room temperature on samples with MBE-grown layers but not on the bare AlN substrates, implying the suppression of non-radiative recombination centers in the epitaxial N-polar AlN. These results are pivotal steps towards future high-power RF electronics and deep ultraviolet photonics based on the N-polar AlN platform. △ Less

Submitted 18 April, 2022; originally announced April 2022.

Growth windows of epitaxial $\textrm{Nb}_x\textrm{N}$ films on c-plane sapphire and their structural and superconducting properties

Authors: John G. Wright, Huili G. Xing, Debdeep Jena

Abstract: NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active nitrogen flux effect the structural phase of films, and thereby the superconducting critical temperature. Four phases of NbN are identified for films grown in differen… ▽ More NbN films are grown on c-plane sapphire substrates by molecular beam epitaxy. The structural and superconducting properties of the film are characterized to demonstrate that growth parameters such as substrate temperature and active nitrogen flux effect the structural phase of films, and thereby the superconducting critical temperature. Four phases of NbN are identified for films grown in different conditions. In a novel finding, we demonstrate that atomically flat and highly crystalline $β$-$\textrm{Nb}_2\textrm{N}$ films can be grown at substrate temperatures of 1100 \degree C or higher, and that the superconducting critical temperature of phase pure $β$-$\textrm{Nb}_2\textrm{N}$ films is $0.35~K<T_c<0.6~K$, based on measurements of films grown at different substrate temperatures. △ Less

Submitted 26 March, 2022; originally announced March 2022.

Extending the kinetic and thermodynamic limits of molecular-beam epitaxy utilizing suboxide sources or metal-oxide catalyzed epitaxy

Authors: Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Jonathan P. McCandless, Jisung Park, Kursti DeLello, David A. Muller, Huili G. Xing, Debdeep Jena, Darrell G. Schlom

Abstract: We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide molecular-beam epitaxy ($S$-MBE). By supplying the molecular catalysts In$_2$O and SnO we increase the growth rates of Ga$_2$O$_3$ and In$_2$O$_3$. This catalytic action is explained by a metastable adlayer $A$, which increases the reaction probability of the reactants Ga$_2$O and In$_2$O with active atomic… ▽ More We observe a catalytic mechanism during the growth of III-O and IV-O materials by suboxide molecular-beam epitaxy ($S$-MBE). By supplying the molecular catalysts In$_2$O and SnO we increase the growth rates of Ga$_2$O$_3$ and In$_2$O$_3$. This catalytic action is explained by a metastable adlayer $A$, which increases the reaction probability of the reactants Ga$_2$O and In$_2$O with active atomic oxygen, leading to an increase of the growth rates of Ga$_2$O$_3$ and In$_2$O$_3$. We derive a model for the growth of binary III-O and IV-O materials by $S$-MBE and apply these findings to a generalized catalytic description for metal-oxide catalyzed epitaxy (MOCATAXY), applicable to elemental and molecular catalysts. We derive a mathematical description of $S$-MBE and MOCATAXY providing a computational framework to set growth parameters in previously inaccessible kinetic and thermodynamic growth regimes when using the aforementioned catalysis. Our results indicate MOCATAXY takes place with a suboxide catalyst rather than with an elemental catalyst. As a result of the growth regimes achieved, we demonstrate a Ga$_2$O$_3$/Al$_2$O$_3$ heterostructure with unrivaled crystalline quality, paving the way to the preparation of oxide device structures with unprecedented perfection. △ Less

Submitted 10 December, 2021; v1 submitted 9 December, 2021; originally announced December 2021.

Infrared dielectric functions and Brillouin zone center phonons of $α$-Ga$_2$O$_3$ compared to $α$-Al$_2$O$_3$

Authors: Megan Stokey, Rafal Korlacki, Matthew Hilfiker, Sean Knight, Steffen Richter, Vanya Darakchieva, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Yuichi Oshima, Kamruzzaman Khan, Elaheh Ahmadi, Mathias Schubert

Abstract: We determine the anisotropic dielectric functions of rhombohedral $α$-Ga$_2$O$_3$ by far-infrared and infrared generalized spectroscopic ellipsometry and derive all transverse optical and longitudinal optical phonon mode frequencies and broadening parameters. We also determine the high frequency and static dielectric constants. We perform density functional theory computations and determine the ph… ▽ More We determine the anisotropic dielectric functions of rhombohedral $α$-Ga$_2$O$_3$ by far-infrared and infrared generalized spectroscopic ellipsometry and derive all transverse optical and longitudinal optical phonon mode frequencies and broadening parameters. We also determine the high frequency and static dielectric constants. We perform density functional theory computations and determine the phonon dispersion for all branches in the Brillouin zone, and we derive all phonon mode parameters at the Brillouin zone center including Raman-active, infrared-active, and silent modes. Excellent agreement is obtained between our experimental and computation results as well as among all previously reported partial information from experiment and theory. We also compute the same information for $α$-Al$_2$O$_3$, the binary parent compound for the emerging alloy of $α$-(Al$_{x}$Ga$_{1-x}$)$_2$O$_3$, and use results from previous investigations [Schubert, Tiwald, and Herzinger, Phys. Rev. B 61, 8187 (2000)] to compare all properties among the two isostructural compounds. From both experimental and theoretical investigations we compute the frequency shifts of all modes between the two compounds. Additionally, we calculate overlap parameters between phonon mode eigenvectors and discuss the possible evolution of all phonon modes into the ternary alloy system and whether modes may form single mode or more complex mode behaviors. △ Less

Submitted 26 August, 2021; originally announced August 2021.

High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers

Authors: Reet Chaudhuri, Zhen Chen, David Muller, Huili Grace Xing, Debdeep Jena

Abstract: High-conductivity undoped GaN/AlN 2D hole gases (2DHGs), the p-type dual of the AlGaN/GaN 2D electron gases (2DEGs), have offered valuable insights into hole transport in GaN and enabled the first GaN GHz RF p-channel FETs. They are an important step towards high-speed and high-power complementary electronics with wide-bandgap semiconductors. These technologically and scientifically relevant 2D ho… ▽ More High-conductivity undoped GaN/AlN 2D hole gases (2DHGs), the p-type dual of the AlGaN/GaN 2D electron gases (2DEGs), have offered valuable insights into hole transport in GaN and enabled the first GaN GHz RF p-channel FETs. They are an important step towards high-speed and high-power complementary electronics with wide-bandgap semiconductors. These technologically and scientifically relevant 2D hole gases are perceived to be not as robust as the 2DEGs because structurally similar heterostructures exhibit wide variations of the hole density over $Δp_s >$ 7 x 10$^{13}$ cm$^{-2}$, and low mobilities. In this work, we uncover that the variations are tied to undesired dopant impurities such as Silicon and Oxygen floating up from the nucleation interface. By introducing impurity blocking layers (IBLs) in the AlN buffer layer, we eliminate the variability in 2D hole gas densities and transport properties, resulting in a much tighter-control over the 2DHG density variations to $Δp_s \leq$ 1 x 10$^{13}$ cm$^{-2}$ across growths, and a 3x boost in the Hall mobilities. These changes result in a 2-3x increase in hole conductivity when compared to GaN/AlN structures without IBLs. △ Less

Submitted 30 June, 2021; originally announced June 2021.

Comments: The following article has been accepted by Journal of Applied Physics. After it is published, it will be found at [https://aip.scitation.org/journal/jap]

Anisotropic dielectric functions, band-to-band transitions, and critical points in α-Ga2O3

Authors: Matthew Hilfiker, Rafał Korlacki, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Ufuk Kilic, Megan Stokey, Mathias Schubert

Abstract: We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an $α$-Ga$_2$O$_3$ thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on $m$-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73 eV to… ▽ More We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an $α$-Ga$_2$O$_3$ thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on $m$-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73 eV to 8.75 eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with $M_0$-type van Hove singularities for polarization perpendicular to the $c$ axis, $E_{0,\perp}=5.46(6)$ eV and $E_{0,\perp}=6.04(1)$ eV, and one direct band-to-band transition with $M_1$-type van Hove singularity for polarization parallel with $E_{0,||}=5.44(2)$ eV. We further identify excitonic contributions with small binding energy of 7 meV associated with the lowest ordinary transition, and a hyperbolic exciton at the $M_1$-type critical point with large binding energy of 178 meV. △ Less

Submitted 17 January, 2021; originally announced January 2021.

Comments: 7 pages, 4 figures, in submission to Applied Physics Letters

$γ$-phase Inclusions as Common Defects in Alloyed $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ and Doped $β$-Ga$_2$O$_3$ Films

Authors: Celesta S. Chang, Nicholas Tanen, Vladimir Protasenko, Thaddeus J. Asel, Shin Mou, Huili Grace Xing, Debdeep Jena, David A. Muller

Abstract: $β$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $γ$-phase is a ubiquitous defect in both $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $β$-Ga$_2$O$_3… ▽ More $β$-Ga$_2$O$_3$ is a promising ultra-wide bandgap semiconductor whose properties can be further enhanced by alloying with Al. Here, using atomic-resolution scanning transmission electron microscopy (STEM), we find the thermodynamically-unstable $γ$-phase is a ubiquitous defect in both $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films and doped $β$-Ga$_2$O$_3$ films grown by molecular beam epitaxy. For undoped $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ films we observe $γ$-phase inclusions between nucleating islands of the $β$-phase at lower growth temperatures (~400-600 $^{\circ}$C). In doped $β$-Ga$_2$O$_3$, a thin layer of the $γ$-phase is observed on the surfaces of films grown with a wide range of n-type dopants and dopant concentrations. The thickness of the $γ$-phase layer was most strongly correlated with the growth temperature, peaking at about 600 $^{\circ}$C. Ga interstitials are observed in $β$-phase, especially near the interface with the $γ$-phase. By imaging the same region of the surface of a Sn-doped $β$-(Al$_x$Ga$_{1\text{-}x}$)$_2$O$_3$ after ex-situ heating up to 400 $^{\circ}$C, a $γ$-phase region is observed to grow above the initial surface, accompanied by a decrease in Ga interstitials in the $β$-phase. This suggests that the diffusion of Ga interstitials towards the surface is likely the mechanism for growth of the surface $γ$-phase, and more generally that the more-open $γ$-phase may offer diffusion pathways to be a kinetically-favored and early-forming phase in the growth of Ga$_2$O$_3$. △ Less

Submitted 30 November, 2020; originally announced December 2020.

GaN/AlGaN 2DEGs in the quantum regime: Magneto-transport and photoluminescence to 60 tesla

Authors: S. A. Crooker, M. Lee, R. D. McDonald, J. L. Doorn, I. Zimmermann, Y. Lai, L. E. Winter, Y. Ren, Y. -J. Cho, B. J. Ramshaw, H. G. Xing, D. Jena

Abstract: Using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate that the quantum limit can be exceeded (Landau level filling factor $ν< 1$), and show evidence for the $ν=2/3$ fractional quantum Hall state. Simultaneous opti… ▽ More Using high magnetic fields up to 60 T, we report magneto-transport and photoluminescence (PL) studies of a two-dimensional electron gas (2DEG) in a GaN/AlGaN heterojunction grown by molecular-beam epitaxy. Transport measurements demonstrate that the quantum limit can be exceeded (Landau level filling factor $ν< 1$), and show evidence for the $ν=2/3$ fractional quantum Hall state. Simultaneous optical and transport measurements reveal synchronous quantum oscillations of both the PL intensity and longitudinal resistivity in the integer quantum Hall regime. PL spectra directly reveal the dispersion of occupied Landau levels in the 2DEG and therefore the electron mass. These results demonstrate the utility of high (pulsed) magnetic fields for detailed measurements of quantum phenomena in high-density 2DEGs. △ Less

Submitted 2 November, 2020; originally announced November 2020.

Comments: 5 pages, 4 figures

Adsorption-Controlled Growth of Ga2O3 by Suboxide Molecular-Beam Epitaxy

Authors: Patrick Vogt, Felix V. E. Hensling, Kathy Azizie, Celesta S. Chang, David Turner, Jisung Park, Jonathan P. McCandless, Hanjong Paik, Brandon J. Bocklund, Georg Hoffman, Oliver Bierwagen, Debdeep Jena, Huili G. Xing, Shin Mou, David A. Muller, Shun-Li Shang, Zi-Kui Liu, Darrell G. Schlom

Abstract: This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the a… ▽ More This paper introduces a growth method---suboxide molecular-beam epitaxy (S-MBE)---which enables the growth of Ga2O3 and related materials at growth rates exceeding 1 micrometer per hours with excellent crystallinity in an adsorptioncontrolled regime. Using a Ga + Ga2O3 mixture with an oxygen mole fraction of x(O) = 0.4 as an MBE source, we overcome kinetic limits that had previously hampered the adsorption-controlled growth of Ga2O3 by MBE. We present growth rates up to 1.6 micrometer per hour for Ga2O3--Al2O3 heterostructures with unprecedented crystalline quality and also at unparalleled low growth temperature for this level of perfection. We combine thermodynamic knowledge of how to create molecular-beams of targeted suboxides with a kinetic model developed for the S-MBE of III-VI compounds to identify appropriate growth conditions. Using S-MBE we demonstrate the growth of phase-pure, smooth, and high-purity homoepitaxial Ga2O3 films that are thicker than 4 micrometer. With the high growth rate of S-MBE we anticipate a significant improvement to vertical Ga2O3-based devices. We describe and demonstrate how this growth method can be applied to a wide-range of oxides. S-MBE rivals leading synthesis methods currently used for the production of Ga2O3-based devices. △ Less

Submitted 30 October, 2020; originally announced November 2020.

Comments: 15 pages, 12 figures

N-polar GaN/AlN resonant tunneling diodes

Authors: YongJin Cho, Jimy Encomendero, Shao-Ting Ho, Huili Grace Xing, Debdeep Jena

Abstract: N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential conductance (NDC) region with a peak tunneling current of 6.8$\pm$ 0.8 kA/cm$^2$ at a forward bias of ~8 V. Under reverse bias, the polarization-induced threshold vol… ▽ More N-polar GaN/AlN resonant tunneling diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy growth. The room-temperature current-voltage characteristics reveal a negative differential conductance (NDC) region with a peak tunneling current of 6.8$\pm$ 0.8 kA/cm$^2$ at a forward bias of ~8 V. Under reverse bias, the polarization-induced threshold voltage is measured at ~$-$4 V. These resonant and threshold voltages are well explained with the polarization field which is opposite to that of the metal-polar counterpart, confirming the N-polarity of the RTDs. When the device is biased in the NDC-region, electronic oscillations are generated in the external circuit, attesting to the robustness of the resonant tunneling phenomenon. In contrast to metal-polar RTDs, N-polar structures have the emitter on the top of the resonant tunneling cavity. As a consequence, this device architecture opens up the possibility of seamlessly interfacing$-$via resonant tunneling injection$-$a wide range of exotic materials with III-nitride semiconductors, providing a route to explore new device physics. △ Less

Submitted 6 October, 2020; originally announced October 2020.

Comments: 12 pages, 3 figures

Journal ref: Appl. Phys. Lett. 117, 143501 (2020)

An unexplored MBE growth mode reveals new properties of superconducting NbN

Authors: John Wright, Celesta Chang, Dacen Waters, Felix Lüpke, Lucy Raymond, Rosalyn Koscica, Guru Khalsa, Randall Feenstra, David Muller, Huili G. Xing, Debdeep Jena

Abstract: Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal m… ▽ More Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the technologically important superconductor NbN at temperatures greater than 1000$^\circ$C, higher than in the past, is found to reveal persistent RHEED oscillations throughout the growth, atomically smooth surfaces, normal metal resistivities as low as 37$μΩ$-cm and superconducting critical temperatures in excess of 15 K. Most remarkably, a reversal of the sign of the Hall coefficient is observed as the NbN films are cooled, and the high material quality allows the first imaging of Abrikosov vortex lattices in this superconductor. △ Less

Submitted 23 December, 2020; v1 submitted 21 August, 2020; originally announced August 2020.

Journal ref: Phys. Rev. Materials 5, 024802 (2021)

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire

Authors: Riena Jinno, Celesta S. Chang, Takeyoshi Onuma, Yongjin Cho, Shao-Ting Ho, Michael C. Cao, Kevin Lee, Vladimir Protasenko, Darrell G. Schlom, David A. Muller, Huili G. Xing, Debdeep Jena

Abstract: Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphi… ▽ More Ultra-wide bandgap semiconductors are ushering in the next generation of high power electronics. The correct crystal orientation can make or break successful epitaxy of such semiconductors. Here it is discovered that single-crystalline layers of $α$-(AlGa)$_2$O$_3$ alloys spanning bandgaps of 5.4 - 8.6 eV can be grown by molecular beam epitaxy. The key step is found to be the use of m-plane sapphire crystal. The phase transition of the epitaxial layers from the $α$- to the narrower bandgap $β$-phase is catalyzed by the c-plane of the crystal. Because the c-plane is orthogonal to the growth front of the m-plane surface of the crystal, the narrower bandgap pathways are eliminated, revealing a route to much wider bandgap materials with structural purity. The resulting energy bandgaps of the epitaxial layers span a range beyond the reach of all other semiconductor families, heralding the successful epitaxial stabilization of the largest bandgap materials family to date. △ Less

Submitted 16 July, 2020; v1 submitted 7 July, 2020; originally announced July 2020.

Comments: 22 pages, 8 figures

Materials Relevant to Realizing a Field-Effect Transistor based on Spin-Orbit Torques

Authors: Phillip Dang, Zexuan Zhang, Joseph Casamento, Xiang Li, Jashan Singhal, Darrell G. Schlom, Daniel C. Ralph, Huili Grace Xing, Debdeep Jena

Abstract: Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that couples a spin-orbit-torque-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic. This allows the SO… ▽ More Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that couples a spin-orbit-torque-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic. This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials. In this report, we discuss and parametrize the types of materials that can lead to a SOTFET heterostructure. △ Less

Submitted 25 December, 2019; originally announced December 2019.

Oxygen Incorporation in the MBE growth of ScxGa1-xN and ScxAl1-xN

Authors: Joseph Casamento, Huili Grace Xing, Debdeep Jena

Abstract: Secondary-ion Mass Spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium containing nitride semiconductor multilayer heterostructures: ScxGa1-xN/GaN and ScxAl1-xN/AlN grown by molecular beam epitaxy (MBE). In the ScxGa1-xN/GaN heterostructure grown in metal rich conditions on GaN-SiC template substrates with Sc contents up to 28 atomic percent, the o… ▽ More Secondary-ion Mass Spectrometry (SIMS) is used to determine impurity concentrations of carbon and oxygen in two scandium containing nitride semiconductor multilayer heterostructures: ScxGa1-xN/GaN and ScxAl1-xN/AlN grown by molecular beam epitaxy (MBE). In the ScxGa1-xN/GaN heterostructure grown in metal rich conditions on GaN-SiC template substrates with Sc contents up to 28 atomic percent, the oxygen concentration is found to be below 1x1019/cm3, with an increase directly correlated with the Scandium content. In the ScxAl1-xN-AlN heterostructure grown in nitrogen rich conditions on AlN-Al2O3 template substrates with Sc contents up to 26 atomic percent, the oxygen concentration is found to be between 1019 to 1021/cm3, again directly correlated with the Sc content. The increased oxygen and carbon arises during the deposition of scandium alloyed layers. △ Less

Submitted 9 December, 2019; originally announced December 2019.

Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN

Authors: Joseph Casamento, John Wright, Reet Chaudhuri, Huili Grace Xing, Debdeep Jena

Abstract: RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered cubic (rock-salt) crystal structure with (111) out-of-plane orientation instead of hexagonal orientation. For the first time, cubic (111) twinned patterns in ScN are observed by in-situ electron diffraction during epita… ▽ More RF plasma assisted MBE growth of Scandium Nitride (ScN) thin films on GaN (0001)/SiC, AlN (0001)/Al2O3 and on 6H-SiC (0001) hexagonal substrates is found to lead to a face centered cubic (rock-salt) crystal structure with (111) out-of-plane orientation instead of hexagonal orientation. For the first time, cubic (111) twinned patterns in ScN are observed by in-situ electron diffraction during epitaxy, and the twin domains in ScN are detected by electron backscattered diffraction, and further corroborated with X-ray diffraction. The epitaxial ScN films display very smooth, sub nanometer surface roughness at a growth temperature of 750C. Temperature-dependent Hall-effect measurements indicate a constant high n-type carrier concentration of ~1x1020/cm3 and electron mobilities of ~ 20 cm2/Vs. △ Less

Submitted 2 August, 2019; originally announced August 2019.

Rotationally Aligned Hexagonal Boron Nitride on Sapphire by High-Temperature Molecular Beam Epitaxy

Authors: Ryan Page, Yongjin Cho, Joseph Casamento, Sergei Rouvimov, Huili Grace Xing, Debdeep Jena

Abstract: Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes have been explored, revealing that high crystalline quality hBN layers are grown at high substrate temperatures, $>$1600$^\circ$C, and low boron fluxes, $\sim1\times10^{-8}$ Torr beam equivalent pressure. \emph{In-situ}… ▽ More Hexagonal boron nitride (hBN) has been grown on sapphire substrates by ultra-high temperature molecular beam epitaxy (MBE). A wide range of substrate temperatures and boron fluxes have been explored, revealing that high crystalline quality hBN layers are grown at high substrate temperatures, $>$1600$^\circ$C, and low boron fluxes, $\sim1\times10^{-8}$ Torr beam equivalent pressure. \emph{In-situ} reflection high energy electron diffraction (RHEED) revealed the growth of hBN layers with $60^\circ$ rotational symmetry and the $[11\bar20]$ axis of hBN parallel to the $[1\bar100]$ axis of the sapphire substrate. Unlike the rough, polycrystalline films previously reported, atomic force microscopy (AFM) and transmission electron microscopy (TEM) characterization of these films demonstrate smooth, layered, few-nanometer hBN films on a nitridated sapphire substrate. This demonstration of high-quality hBN growth by MBE is a step towards its integration into existing epitaxial growth platforms, applications, and technologies. △ Less

Submitted 17 June, 2019; originally announced June 2019.

Journal ref: Physical Review MATERIALS 3, 064001 (2019)

Wurtzite Phonons and the Mobility of a GaN/AlN 2D Hole Gas

Authors: Samuel James Bader, Reet Chaudhuri, Martin Schubert, Han Wui Then, Huili Grace Xing, Debdeep Jena

Abstract: To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives both the acoustic and optical phonon spectra present in one of the most prominent p-channel heterostructures (the all-binary GaN/AlN stack) and computes the interactions of these spectra with the 2D hole gas, capturing the… ▽ More To make complementary GaN electronics more than a pipe dream, it is essential to understand the low mobility of 2D hole gases in III-Nitride heterostructures. This work derives both the acoustic and optical phonon spectra present in one of the most prominent p-channel heterostructures (the all-binary GaN/AlN stack) and computes the interactions of these spectra with the 2D hole gas, capturing the temperature dependence of its intrinsic mobility. Finally, the effects of strain on the electronic structure of the confined 2D hole gas are examined and a means is proposed to engineer the strain to improve the 2D hole mobility for enhanced p-channel device performance, with the goal of enabling wide-bandgap CMOS. △ Less

Submitted 12 June, 2019; originally announced June 2019.

The New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System

Authors: Debdeep Jena, Ryan Page, Joseph Casamento, Phillip Dang, Jashan Singhal, Zexuan Zhang, John Wright, Guru Khalsa, Yongjin Cho, Huili Grace Xing

Abstract: The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over the past few years, a number of new nitride materials have emerged with exciting photonic, electronic, and magnetic properties. Some examples are 2D and layered… ▽ More The nitride semiconductor materials GaN, AlN, and InN, and their alloys and heterostructures have been investigated extensively in the last 3 decades, leading to several technologically successful photonic and electronic devices. Just over the past few years, a number of new nitride materials have emerged with exciting photonic, electronic, and magnetic properties. Some examples are 2D and layered hBN and the III-V diamond analog cBN, the transition metal nitrides ScN, YN, and their alloys (e.g. ferroelectric ScAlN), piezomagnetic GaMnN, ferrimagnetic Mn4N, and epitaxial superconductor/semiconductor NbN/GaN heterojunctions. This article reviews the fascinating and emerging physics and science of these new nitride materials. It also discusses their potential applications in future generations of devices that take advantage of the photonic and electronic devices eco-system based on transistors, light-emitting diodes, and lasers that have already been created by the nitride semiconductors. △ Less

Submitted 18 May, 2019; originally announced May 2019.

Comments: 16 pages, 3 figures

Journal ref: Japanese Journal of Applied Physics 58, SC0801 (2019)

Significantly Reduced Thermal Conductivity in Beta-(Al0.1Ga0.9)2O3/Ga2O3 Superlattices

Authors: Zhe Cheng, Nicholas Tanen, Celesta Chang, Jingjing Shi, Jonathan McCandless, David Muller, Debdeep Jena, Huili Grace Xing, Samuel Graham

Abstract: Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least one order of magnitude lower than that of other wide bandgap semiconductors such as SiC and GaN. Thermal dissipation in electronics made from beta-… ▽ More Beta-Ga2O3 has emerged as a promising candidate for electronic device applications because of its ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates grown from the melt. However, its thermal conductivity is at least one order of magnitude lower than that of other wide bandgap semiconductors such as SiC and GaN. Thermal dissipation in electronics made from beta-Ga2O3 will be the bottleneck for real-world applications, especially for high power and high frequency devices. Similar to GaN/AlGaN interfaces, beta-(AlxGa1-x)2O3/Ga2O3 heterogeneous structures have been used to form a high mobility two-dimensional electron gas (2DEG) where joule heating is localized. The thermal properties of beta-(AlxGa1-x)2O3/Ga2O3 are the key for heat dissipation in these devices while they have not been studied before. This work reports the first measurement on thermal conductivity of beta-(Al0.1Ga0.9)2O3/Ga2O3 superlattices from 80 K to 480 K. Its thermal conductivity is significantly reduced (5.7 times reduction) at room temperature comparing with that of bulk Ga2O3. Additionally, the thermal conductivity of bulk Ga2O3 with (010) orientation is measured and found to be consistent with literature values regardless of Sn doping. We discuss the phonon scattering mechanism in these structures by calculating their inverse thermal diffusivity. By comparing the estimated thermal boundary conductance (TBC) of beta-(Al0.1Ga0.9)2O3/Ga2O3 interfaces and Ga2O3 maximum TBC, we reveal that some phonons in the superlattices transmit through several interfaces before scattering with other phonons or structural imperfections. This study is not only important for Ga2O3 electronics applications especially for high power and high frequency applications, but also for the fundamental thermal science of phonon transport across interfaces and in superlattices. △ Less

Submitted 30 April, 2019; originally announced May 2019.

Journal ref: Applied Physics Letter 115, 092105 (2019)

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Authors: Runjie Lily Xu, Miguel Munoz Rojo, S. M. Islam, Aditya Sood, Bozo Vareskic, Ankita Katre, Natalio Mingo, Kenneth E. Goodson, Huili Grace Xing, Debdeep Jena, Eric Pop

Abstract: Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the 3$ω$ method, finding it ranges from 674 ${\pm}$ 56 W/m/K at 100 K to 186 ${\pm}$ 7 W/m/K at 400 K, with a value of 237 ${\pm}$ 6 W/m/K at room temperature. We compare the… ▽ More Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here we measure the thermal conductivity of crystalline AlN by the 3$ω$ method, finding it ranges from 674 ${\pm}$ 56 W/m/K at 100 K to 186 ${\pm}$ 7 W/m/K at 400 K, with a value of 237 ${\pm}$ 6 W/m/K at room temperature. We compare these data with analytical models and first principles calculations, taking into account atomic-scale defects (O, Si, C impurities, and Al vacancies). We find Al vacancies play the greatest role in reducing thermal conductivity because of the largest mass-difference scattering. Modeling also reveals that 10% of heat conduction is contributed by phonons with long mean free paths, over ~7 $μ$m at room temperature, and 50% by phonons with MFPs over ~0.3 $μ$m. Consequently, the effective thermal conductivity of AlN is strongly reduced in sub-micron thin films or devices due to phonon-boundary scattering. △ Less

Submitted 8 December, 2019; v1 submitted 31 March, 2019; originally announced April 2019.

Journal ref: J. Appl. Phys. 126, 185105 (2019)

Blue (In,Ga)N Light-Emitting Diodes with Buried n+-p+ Tunnel Junctions by Plasma-Assisted Molecular Beam Epitaxy

Authors: YongJin Cho, Shyam Bharadwaj, Zongyang Hu, Kazuki Nomoto, Uwe Jahn, Huili Grace Xing, Debdeep Jena

Abstract: Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam epitaxy. The (In,Ga)N MQW active regions overgrown on the p+-GaN show chemically abrupt and sharp interfaces in a wide range of compositions and are seen to have hi… ▽ More Blue light-emitting diodes (LEDs) consisting of a buried n+-p+ GaN tunnel junction, (In,Ga)N multiple quantum wells (MQWs) and a n+-GaN top layer are grown on single-crystal Ga-polar n+-GaN bulk wafers by plasma-assisted molecular beam epitaxy. The (In,Ga)N MQW active regions overgrown on the p+-GaN show chemically abrupt and sharp interfaces in a wide range of compositions and are seen to have high structural and optical properties as verified by X-ray diffraction and spatially resolved cathodoluminescence measurements. The processed LEDs reveal clear rectifying behavior with a low contact and buried tunnel junction resistivity. By virtue of the top n+-GaN layer with a low resistance, excellent current spreading in the LEDs is observed at low currents in this device structure. A few of new device possibilities based on this unique design are discussed. △ Less

Submitted 18 December, 2018; originally announced December 2018.

Evolution of superconductivity in ultrathin NbS2

Authors: Rusen Yan, Guru Khalsa, Brian T. Schaefer, Alexander Jarjour, Sergei Rouvimov, Katja C. Nowack, Huili G. Xing, Debdeep Jena

Abstract: We report a systematic study of thickness-dependent superconductivity and carrier transport properties in exfoliated layered 2H-NbS2. Hall-effect measurements reveal 2H-NbS2 in its normal state to be a p-type metal with hole mobility of 1-3 cm2/Vs. The superconducting transition temperature is found to decrease with thickness. We find that the suppression of superconductivity is due to disorder re… ▽ More We report a systematic study of thickness-dependent superconductivity and carrier transport properties in exfoliated layered 2H-NbS2. Hall-effect measurements reveal 2H-NbS2 in its normal state to be a p-type metal with hole mobility of 1-3 cm2/Vs. The superconducting transition temperature is found to decrease with thickness. We find that the suppression of superconductivity is due to disorder resulting from the incorporation of atmospheric oxygen and a reduced hole density. Cross-section transmission electron microscope (TEM) imaging reveals a chemical change of NbS2 in ambient conditions, resulting in the formation of amorphous oxide layers sandwiching crystalline layered NbS2. Though few-nm-thick 2H-NbS2 completely converts to amorphous oxide in ambient conditions, PMMA encapsulation prevents further chemical change and preserves superconductivity. △ Less

Submitted 16 March, 2018; originally announced March 2018.

Comments: 16 pages, 5 figures

Terahertz spectroscopy of an electron-hole bilayer system in AlN/GaN/AlN quantum wells

Authors: H. Condori Quispe, S. M. Islam, S. Bader, A. Chanana, K. Lee, R. Chaudhuri, A. Nahata, H. G. Xing, D. Jena, B. Sensale-Rodriguez

Abstract: We describe studies on the nanoscale transport dynamics of carriers in strained AlN/GaN/AlN quantum wells: an electron-hole bilayer charge system with large difference in transport properties between the two charge layers. From electronic band diagram analysis, the presence of spatially separated two-dimensional electron and hole charge layers is predicted at opposite interfaces. Since these charg… ▽ More We describe studies on the nanoscale transport dynamics of carriers in strained AlN/GaN/AlN quantum wells: an electron-hole bilayer charge system with large difference in transport properties between the two charge layers. From electronic band diagram analysis, the presence of spatially separated two-dimensional electron and hole charge layers is predicted at opposite interfaces. Since these charge layers exhibit distinct spectral signatures at terahertz frequencies, a combination of terahertz and far-infrared spectroscopy enables us to extract (a) individual contributions to the total conductivity, as well as (b) effective scattering rates for charge-carriers in each layer. Furthermore, by comparing direct-current and terahertz extracted conductivity levels, we are able to determine the extent to which structural defects affect charge transport. Our results evidence that (i) a non-unity Hall-factor and (ii) the considerable contribution of holes to the overall conductivity, lead to a lower apparent mobility in Hall-effect measurements. Overall, our work demonstrates that terahertz spectroscopy is a suitable technique for the study of bilayer charge systems with large differences in transport properties between layers, such as quantum wells in III-Nitride semiconductors. △ Less

Submitted 15 August, 2017; originally announced August 2017.

Comments: Applied Physics Letters

Journal ref: APL 111(7), 073102 (2017)

Single-Crystal N-polar GaN p-n Diodes by Plasma-Assisted Molecular Beam Epitaxy

Authors: YongJin Cho, Zongyang Hu, Kazuki Nomoto, Huili Grace Xing, Debdeep Jena

Abstract: N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with a high on/off current ratio and interband photon emission. The measured electroluminescence spectrum is dominated by strong near-band edge emission, while deep… ▽ More N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk wafers by plasma-assisted molecular beam epitaxy growth. The current-voltage characteristics show high-quality rectification and electroluminescence characteristics with a high on/off current ratio and interband photon emission. The measured electroluminescence spectrum is dominated by strong near-band edge emission, while deep level luminescence is greatly suppressed. A very low dislocation density leads to a high reverse breakdown electric field. The low leakage current N-polar diodes open up several potential applications in polarization-engineered photonic and electronic devices. △ Less

Submitted 7 June, 2017; originally announced June 2017.

Comments: 13 pages, 3 figures, to appear in Applied Physics Letters

Journal ref: Appl. Phys. Lett. 110, 253506 (2017)

MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates

Authors: Suresh Vishwanath, Aditya Sundar, Xinyu Liu, Angelica Azcatl, Edward Lochocki, Arthur R. Woll, Sergei Rouvimov, Wan Sik Hwang, Ning Lu, Xin Peng, Huai-Hsun Lien, John Weisenberger, Stephen McDonnell, Moon J. Kim, Margaret Dobrowolska, Jacek K Furdyna, Kyle Shen, Robert M. Wallace, Debdeep Jena, Huili Grace Xing

Abstract: MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibriu… ▽ More MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibrium. For a few-layer MoTe2 grown at a moderate rate of $\sim$6 mins per monolayer under varied Te:Mo flux ratio and substrate temperature, the boundary between the 2 phases in MBE grown MoTe2 on CaF2 is characterized using Reflection high-energy electron diffraction (RHEED), Raman spectroscopy and X-ray photoemission spectroscopy (XPS). Grazing incidence X-ray diffraction (GI-XRD) reveals a grain size of $\sim$90 Å and presence of twinned grains. XRD, transmission electron miscroscopy, RHEED, low energy electron diffraction along with lack of electrical conductivity modulation by field effect in MBE 2H-MoTe2 on GaAs (111) B show likelihood of excess Te incorporation in the films. Finally, thermal stability and air sensitivity of MBE 2H-MoTe2 is investigated by temperature dependent XRD and XPS, respectively. △ Less

Submitted 1 May, 2017; originally announced May 2017.

Comments: Six figure in main tex, 8 figures in SI and 4 tables in main text

Electron Mobility in Polarization-doped Al$\mathrm{_{0-0.2}}$GaN with a Low Concentration Near 10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$

Authors: Mingda Zhu, Meng Qi, Kazuki Nomoto, Zongyang Hu, Bo Song, Ming Pan, Xiang Gao, Debdeep Jena, Huili Grace Xing

Abstract: In this letter, carrier transport in graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N with a polarization-induced n-type doping as low as ~ 10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$ is reported. The graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N is grown by metal organic chemical vapor deposition on a sapphire substrate and a uniform n-type doping without any intentional doping is realized by linearly varying t… ▽ More In this letter, carrier transport in graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N with a polarization-induced n-type doping as low as ~ 10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$ is reported. The graded Al$\mathrm{_x}$Ga$\mathrm{_{1-x}}$N is grown by metal organic chemical vapor deposition on a sapphire substrate and a uniform n-type doping without any intentional doping is realized by linearly varying the Al composition from 0% to 20% over a thickness of 600 nm. A compensating center concentration of ~10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$ was also estimated. A peak mobility of 900 cm$\mathrm{^2}$/V$\mathrm \cdot$s at room temperature is extracted at an Al composition of ~ 7%, which represents the highest mobility achieved in n-Al$\mathrm{_{0.07}}$GaN with a carrier concentration ~10$\mathrm{^{17}}$ cm$\mathrm{^{-3}}$. Comparison between experimental data and theoretical models shows that, at this low doping concentration, both dislocation scattering and alloy scattering are significant in limiting electron mobility; and that a dislocation density of <10$\mathrm{^7}$ cm$\mathrm{^{-2}}$ is necessary to optimize mobility near 10$\mathrm{^{16}}$ cm$\mathrm{^{-3}}$. The findings in this study provide insight in key elements for achieving high mobility at low doping levels in GaN, a critical parameter in design of novel power electronics taking advantage of polarization doping. △ Less

Submitted 10 April, 2017; originally announced April 2017.

Comments: 6 figures. Submitted to Applied Physics Letters

Observation of oscillatory relaxation in the Sn-terminated surface of epitaxial rock-salt SnSe $\{111\}$ topological crystalline insulator

Authors: Wencan Jin, Suresh Vishwanath, Jianpeng Liu, Lingyuan Kong, Rui Lou, Zhongwei Dai, Jerzy T. Sadowski, Xinyu Liu, Huai-Hsun Lien, Alexander Chaney, Yimo Han, Micheal Cao, Junzhang Ma, Tian Qian, Jerry I. Dadap, Shancai Wang, Malgorzata Dobrowolska, Jacek Furdyna, David A. Muller, Karsten Pohl, Hong Ding, Huili Grace Xing, Richard M. Osgood, Jr

Abstract: Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density fu… ▽ More Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, are used to demonstrate conclusively that a rock-salt SnSe $\{111\}$ thin film epitaxially-grown on \ce{Bi2Se3} has a stable Sn-terminated surface. These observations are supported by low energy electron diffraction (LEED) intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe $\{111\}$ thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe $\{111\}$ thin film is shown to yield a high Fermi velocity, $0.50\times10^6$m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration. △ Less

Submitted 10 April, 2017; originally announced April 2017.

Comments: 12 pages, 13 figures, supplementary materials included

Journal ref: Phys. Rev. X 7, 041020 (2017)

Repeatable Room Temperature Negative Differential Conductance in GaN/AlN Resonant Tunneling Diodes

Authors: Jimy Encomendero, Faiza Afroz Faria, S. M. Islam, Vladimir Protasenko, Sergei Rouvimov, Patrick Fay, Debdeep Jena, Huili Grace Xing

Abstract: Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature current-voltage measurements reveal the presence of a negative differential conductance region under forward bias with peak current densities of ~6.4 $kA/cm^2$ and a peak t… ▽ More Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature current-voltage measurements reveal the presence of a negative differential conductance region under forward bias with peak current densities of ~6.4 $kA/cm^2$ and a peak to valley current ratio of ~1.3. Reverse bias operation presents a characteristic turn-on threshold voltage intimately linked to the polarization fields present in the heterostructure. An analytic electrostatic model is developed to capture the unique features of polar-heterostructure-based resonant tunneling diodes; both the resonant and threshold voltages are derived as a function of the design parameters and polarization fields. Subsequent measurements confirm the repeatability of the negative conductance and demonstrate that III-nitride tunneling heterostructures are capable of robust resonant transport at room temperature. △ Less

Submitted 26 June, 2016; originally announced June 2016.

Comments: 11 pages, 5 figures

Journal ref: Phys. Rev. X 7, 041017 (2017)

Layered transition metal dichalcogenides: promising near-lattice-matched substrates for GaN growth

Authors: Priti Gupta, A. A. Rahman, Shruti Subramanian, Shalini Gupta, Arumugam Thamizhavel, Tatyana Orlova, Sergei Rouvimov, Suresh Vishwanath, Vladimir Protasenko, Masihhur R. Laskar, Huili Grace Xing, Debdeep Jena, Arnab Bhattacharya

Abstract: Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfo… ▽ More Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS$_2$ and MoS$_2$ by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalcogenide flakes. We obtain strong near-band-edge emission from these layers, and analyse their temperature-dependent photoluminescence properties. We also report a proof-of-concept demonstration of large-area epitaxial growth of GaN on CVD MoS$_2$. Our results show that the transition-metal dichalcogenides can serve as novel near-lattice-matched substrates for nitride growth. △ Less

Submitted 28 September, 2015; originally announced September 2015.

Comments: main manuscript: page 1-15, 5 figures; supplementary: page 16-23

Report number: Scientific Reports 6, Article number: 23708 (2016)

Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits

Authors: Huili Grace Xing, Bo Song, Mingda Zhu, Zongyang Hu, Meng Qi, Kazuki Nomoto, Debdeep Jena

Abstract: Owing to the large breakdown electric field, wide bandgap semiconductors such as SiC, GaN, Ga2O3 and diamond based power devices are the focus for next generation power switching applications. The unipolar trade-off relationship between the area specific-on resistance and breakdown voltage is often employed to compare the performance limitation among various materials. The GaN material system has… ▽ More Owing to the large breakdown electric field, wide bandgap semiconductors such as SiC, GaN, Ga2O3 and diamond based power devices are the focus for next generation power switching applications. The unipolar trade-off relationship between the area specific-on resistance and breakdown voltage is often employed to compare the performance limitation among various materials. The GaN material system has a unique advantage due to its prominent spontaneous and piezoelectric polarization effects in GaN, AlN, InN, AlxInyGaN alloys and flexibility in inserting appropriate heterojunctions thus dramatically broaden the device design space. △ Less

Submitted 18 May, 2015; originally announced May 2015.

Comments: Invited paper, to appear in IEEE Device Research Conference (DRC), June 2015

Esaki diodes in van der Waals heterojunctions with broken-gap energy band alignment

Authors: Rusen Yan, Sara Fathipour, Yimo Han, Bo Song, Shudong Xiao, Mingda Li, Nan Ma, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing

Abstract: Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibit novel physics phenomena that can power high performance electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW solids: room temperature (RT) Esaki tunnel diodes. The Esaki diodes were realized… ▽ More Van der Waals (vdW) heterojunctions composed of 2-dimensional (2D) layered materials are emerging as a solid-state materials family that exhibit novel physics phenomena that can power high performance electronic and photonic applications. Here, we present the first demonstration of an important building block in vdW solids: room temperature (RT) Esaki tunnel diodes. The Esaki diodes were realized in vdW heterostructures made of black phosphorus (BP) and tin diselenide (SnSe2), two layered semiconductors that possess a broken-gap energy band offset. The presence of a thin insulating barrier between BP and SnSe2 enabled the observation of a prominent negative differential resistance (NDR) region in the forward-bias current-voltage characteristics, with a peak to valley ratio of 1.8 at 300 K and 2.8 at 80 K. A weak temperature dependence of the NDR indicates electron tunneling being the dominant transport mechanism, and a theoretical model shows excellent agreement with the experimental results. Furthermore, the broken-gap band alignment is confirmed by the junction photoresponse and the phosphorus double planes in a single layer of BP are resolved in transmission electron microscopy (TEM) for the first time. Our results represent a significant advance in the fundamental understanding of vdW heterojunctions, and widen the potential applications base of 2D layered materials. △ Less

Submitted 25 April, 2015; v1 submitted 10 April, 2015; originally announced April 2015.

Comments: 27 pages, 11 figures

Journal ref: Nano Lett. 2015, 15, 5791

Dual Optical Marker Raman Characterization of Strained GaN-channels on AlN Using AlN/GaN/AlN Quantum Wells and 15N Isotopes

Authors: Meng Qi, Guowang Li, Vladimir Protasenko, Pei Zhao, Jai Verma, Bo Song, Satyaki Ganguly, Mingda Zhu, Zongyang Hu, Xiaodong Yan, Alexander Mintairov, Huili Grace Xing, Debdeep Jena

Abstract: This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried act… ▽ More This work shows that the combination of ultrathin highly strained GaN quantum wells embedded in an AlN matrix, with controlled isotopic concentrations of Nitrogen enables a dual marker method for Raman spectroscopy. By combining these techniques, we demonstrate the effectiveness in studying strain in the vertical direction. This technique will enable the precise probing of properties of buried active layers in heterostructures, and can be extended in the future to vertical devices such as those used for optical emitters, and for power electronics. △ Less

Submitted 31 January, 2015; originally announced February 2015.

Comments: 18 pages, 4 figures, published in Applied Physics Letters

Journal ref: Applied Physics Letters, 106, 041906 (2015)

Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene

Authors: Suresh Vishwanath, Xinyu Liu, Sergei Rouvimov, Patrick C. Mende, Angelica Azcatl, Stephen McDonnell, Robert M. Wallace, Randall M. Feenstra, Jacek K. Furdyna, Debdeep Jena, Huili Grace Xing

Abstract: We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H- MoSe2 grows by van-der-Waals epitaxy on all 3 substrates with a preferred crystallographic orientation and a Mo:Se ratio of 1:2. Photoluminescence at room temperature (~1… ▽ More We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial graphene. Extensive characterizations reveal that 2H- MoSe2 grows by van-der-Waals epitaxy on all 3 substrates with a preferred crystallographic orientation and a Mo:Se ratio of 1:2. Photoluminescence at room temperature (~1.56 eV) is observed in monolayer MoSe2 on both CaF2 and epitaxial graphene. The band edge absorption is very sharp, <60 meV over 3 decades. Overcoming the observed small grains by promoting mobility of Mo atoms would make MBE a powerful technique to achieve high quality 2D materials and heterostructures. △ Less

Submitted 18 December, 2014; originally announced December 2014.

Comments: 5 Figures in main paper and 6 figures in supplementary information

Self-Assembled Ge QDs Formed by High Temperature Annealing on GaAs and AlxGa1-xAs (001)

Authors: William A. O'Brien, Meng Qi, Lifan Yan, Chad A. Stephenson, Vladimir Protasenko, Huili Grace Xing, Joanna M. Millunchick, Mark A. Wistey

Abstract: This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs are observed by atom probe tomography, which revealed nearly spherical QDs with diameters approaching 10 nm and confirmed the complete absence of a wetting layer. Reflection high-energy electron diffracti… ▽ More This work studies the spontaneous self-assembly of Ge QDs on AlAs, GaAs, and AlGaAs by high temperature in-situ annealing in molecular beam epitaxy (MBE). The morphology of Ge dots formed on AlAs are observed by atom probe tomography, which revealed nearly spherical QDs with diameters approaching 10 nm and confirmed the complete absence of a wetting layer. Reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM) of Ge annealed under similar conditions on GaAs and Al0.3Ga0.7As surfaces reveal the gradual suppression of QD formation with decreasing Al-content of the buffer. To investigate the prospects of using encapsulated Ge dots for upconverting photovoltaics, in which photocurrent can still be generated from photons with energy less than the host bandgap, Ge QDs are embedded into the active region of III-V PIN diodes by MBE. It is observed that orders of magnitude higher short-circuit current is obtained at photon energies below the GaAs bandgap compared with a reference PIN diode without Ge QDs. These results demonstrate the promise of Ge QDs for upconverting solar cells and the realization of device-quality integration of group IV and III-V semiconductors. △ Less

Submitted 29 October, 2014; originally announced October 2014.

Comments: 14 pages, 8 figures

Strain Sensitivity in the Nitrogen 1s NEXAFS Spectra of Gallium Nitride

Authors: Andrew Ritchie, Shaylin Eger, Chelsey Wright, Daniel Chelladurai, Cuyler Borrowman, Weine Olovsson, Martin Magnuson, Jai Verma, Debdeep Jena, Huili Grace Xing, Christian Dubuc, Stephen Urquhart

Abstract: The Nitrogen 1s near edge X-ray absorption fine structure (NEXAFS) of gallium nitride (GaN) shows a strong natural linear dichroism that arises from its anisotropic wurtzite structure. An additional spectroscopic variation arises from lattice strain in epitaxially grown GaN thin films. This variation is directly proportional to the degree of strain for some spectroscopic features. This strain vari… ▽ More The Nitrogen 1s near edge X-ray absorption fine structure (NEXAFS) of gallium nitride (GaN) shows a strong natural linear dichroism that arises from its anisotropic wurtzite structure. An additional spectroscopic variation arises from lattice strain in epitaxially grown GaN thin films. This variation is directly proportional to the degree of strain for some spectroscopic features. This strain variation is interpreted with the aid of density functional theory calculations. △ Less

Submitted 29 August, 2014; originally announced August 2014.

Comments: 20 pages, 6 figures, http://www.sciencedirect.com/science/article/pii/S0169433214015980 or Applied Surface Science 316, 232 (2014)

Single Particle Transport in Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor

Authors: Mingda Li, David Esseni, Gregory Snider, Debdeep Jena, Huili Grace Xing

Abstract: The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen's transfer Hamiltonian, and including a se… ▽ More The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen's transfer Hamiltonian, and including a semi-classical treatment of scattering and energy broadening effects. The misalignment between the two 2D materials is also studied and found to influence the magnitude of the tunneling current, but have a modest impact on its gate voltage dependence. Our simulation results suggest that the Thin-TFETs can achieve very steep subthreshold swing, whose lower limit is ultimately set by the band tails in the energy gaps of the 2D materials produced by energy broadening. The Thin-TFET is thus very promising as a low voltage, low energy solid state electronic switch. △ Less

Submitted 9 December, 2013; originally announced December 2013.

Ge Quantum Dots Encapsulated by AlAs Grown by Molecular Beam Epitaxy on GaAs Without Extended Defects

Authors: Meng Qi, Chad A. Stephenson, Vladimir Protasenko, William A. O'Brien, Alexander Mintairov, Huili Grace Xing, Mark A. Wistey

Abstract: We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature, in-situ anneal. Subsequent AlAs overgrowth was free from threading dislocations and anti-phase domains. The straddling band alignment for Ge in AlAs promises strong a… ▽ More We demonstrate nearly-spherical, strain-free, self-assembled Ge quantum dots (QDs) fully encapsulated by AlAs, grown on (100) GaAs by molecular beam epitaxy (MBE). The QDs were formed without a wetting layer using a high temperature, in-situ anneal. Subsequent AlAs overgrowth was free from threading dislocations and anti-phase domains. The straddling band alignment for Ge in AlAs promises strong and tunable confinement for both electrons and holes. The reflection high-energy electron diffraction (RHEED) pattern changed from 2x3 to 2x5 with anneal, which can be explained by surface reconstructions based on the electron-counting model. △ Less

Submitted 6 November, 2013; originally announced November 2013.

Comments: 14 pages, 5 figures, submitted to Applied Physics Letters